DE10305079B4 - Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser - Google Patents

Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser Download PDF

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Publication number
DE10305079B4
DE10305079B4 DE10305079A DE10305079A DE10305079B4 DE 10305079 B4 DE10305079 B4 DE 10305079B4 DE 10305079 A DE10305079 A DE 10305079A DE 10305079 A DE10305079 A DE 10305079A DE 10305079 B4 DE10305079 B4 DE 10305079B4
Authority
DE
Germany
Prior art keywords
semiconductor laser
surface emitting
emitting semiconductor
producing
tunnel junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10305079A
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German (de)
Other versions
DE10305079A1 (en
Inventor
Markus-Christian Amann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vertilas GmbH
Original Assignee
Vertilas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10305079A priority Critical patent/DE10305079B4/en
Application filed by Vertilas GmbH filed Critical Vertilas GmbH
Priority to KR1020057009578A priority patent/KR20050085176A/en
Priority to ES03776886T priority patent/ES2266882T3/en
Priority to JP2005510225A priority patent/JP2006508550A/en
Priority to DE50304250T priority patent/DE50304250D1/en
Priority to PCT/EP2003/012433 priority patent/WO2004049461A2/en
Priority to EP03776886A priority patent/EP1568112B1/en
Priority to US10/535,688 priority patent/US20060126687A1/en
Priority to DK03776886T priority patent/DK1568112T3/en
Priority to CA002503782A priority patent/CA2503782A1/en
Priority to AT03776886T priority patent/ATE333158T1/en
Priority to AU2003286155A priority patent/AU2003286155A1/en
Publication of DE10305079A1 publication Critical patent/DE10305079A1/en
Application granted granted Critical
Publication of DE10305079B4 publication Critical patent/DE10305079B4/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
DE10305079A 2002-11-12 2003-02-07 Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser Expired - Fee Related DE10305079B4 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
DE10305079A DE10305079B4 (en) 2002-11-27 2003-02-07 Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser
DK03776886T DK1568112T3 (en) 2002-11-27 2003-11-06 Process for manufacturing an embedded tunnel junction in a surface emitting semiconductor laser
JP2005510225A JP2006508550A (en) 2002-11-27 2003-11-06 Method for manufacturing buried tunnel junction of surface emitting semiconductor laser
DE50304250T DE50304250D1 (en) 2002-11-27 2003-11-06 METHOD FOR PRODUCING A VERTICAL TUNNEL CONTACT IN A SURFACE-EMITTING SEMICONDUCTOR LASER
PCT/EP2003/012433 WO2004049461A2 (en) 2002-11-27 2003-11-06 Method for producing a buried tunnel junction in a surface-emitting semiconductor laser
EP03776886A EP1568112B1 (en) 2002-11-27 2003-11-06 Method for producing a buried tunnel junction in a surface-emitting semiconductor laser
KR1020057009578A KR20050085176A (en) 2002-11-27 2003-11-06 Method for manufacturing a buried tunnel junction in a surface-emitting semi-conductor laser
ES03776886T ES2266882T3 (en) 2002-11-27 2003-11-06 PROCEDURE FOR MANUFACTURING A TUNNEL CONTACT BURED IN A SEMICONDUCTOR LASER THAT ISSUED BY THE SURFACE.
CA002503782A CA2503782A1 (en) 2002-11-27 2003-11-06 Method for producing a buried tunnel junction in a surface-emitting semiconductor laser
AT03776886T ATE333158T1 (en) 2002-11-27 2003-11-06 METHOD FOR PRODUCING A BURNED TUNNEL CONTACT IN A SURFACE EMITTING SEMICONDUCTOR LASER
AU2003286155A AU2003286155A1 (en) 2002-11-27 2003-11-06 Method for producing a buried tunnel junction in a surface-emitting semiconductor laser
US10/535,688 US20060126687A1 (en) 2002-11-12 2003-11-06 Method for producing a buried tunnel junction in a surface-emitting semiconductor laser

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10255307 2002-11-27
DE10255307.6 2002-11-27
DE10305079A DE10305079B4 (en) 2002-11-27 2003-02-07 Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser

Publications (2)

Publication Number Publication Date
DE10305079A1 DE10305079A1 (en) 2004-06-17
DE10305079B4 true DE10305079B4 (en) 2005-04-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE10305079A Expired - Fee Related DE10305079B4 (en) 2002-11-12 2003-02-07 Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser

Country Status (2)

Country Link
CN (1) CN1717850A (en)
DE (1) DE10305079B4 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007089042A1 (en) * 2006-02-03 2007-08-09 Ricoh Company, Ltd. Surface-emitting laser device and surface-emitting laser array including same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3751782T2 (en) * 1986-09-22 1996-09-05 British Telecomm Semiconductor structures and their manufacturing processes
WO2002017361A1 (en) * 2000-08-22 2002-02-28 The Regents Of The University Of California A method for aperturing vertical-cavity surface-emitting lasers (vscels)
DE10107349A1 (en) * 2001-02-15 2002-08-29 Markus-Christian Amann Surface emitting semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3751782T2 (en) * 1986-09-22 1996-09-05 British Telecomm Semiconductor structures and their manufacturing processes
WO2002017361A1 (en) * 2000-08-22 2002-02-28 The Regents Of The University Of California A method for aperturing vertical-cavity surface-emitting lasers (vscels)
DE10107349A1 (en) * 2001-02-15 2002-08-29 Markus-Christian Amann Surface emitting semiconductor laser

Also Published As

Publication number Publication date
CN1717850A (en) 2006-01-04
DE10305079A1 (en) 2004-06-17

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