DE102023102136A1 - OPTOELECTRONIC MODULE AND METHOD FOR PRODUCING AN OPTOELECTRONIC MODULE - Google Patents

Abstract

An optoelectronic module (1) comprising a plurality of semiconductor laser components (11, 12, 13) which are designed to emit electromagnetic radiation in a main emission direction (Z) and a radiation-permeable light guide structure (20) is specified. Each semiconductor laser component (11, 12, 13) has at least one emission region (110, 120, 130). The semiconductor laser components (11, 12, 13) are arranged on the light guide structure (20). The light guide structure (20) has at least one end face (20A) which is aligned transversely to the main emission direction (Z). At least one of the semiconductor laser components (11, 12, 13) couples at least a predominant part of its electromagnetic radiation emitted during operation into an end face (20A) of the light guide structure (20). A method for producing an optoelectronic module (1) is further specified.

Description

An optoelectronic module and a method for producing an optoelectronic module are specified. The optoelectronic module is designed in particular to emit electromagnetic radiation, for example light that is perceptible to the human eye.

One task to be solved is to specify an optoelectronic module with a particularly compact design.

A further problem to be solved is to provide a method for producing an optoelectronic module with a particularly compact design.

These objects are achieved by a device and a method according to the independent patent claims. Advantageous embodiments and developments of the device and the method are the subject of the dependent patent claims and are also apparent from the following description and the figures.

According to at least one embodiment, the optoelectronic module comprises a plurality of semiconductor laser components which are configured to emit electromagnetic radiation in a main emission direction and a radiation-permeable light guide structure.

The semiconductor laser components are designed in particular as edge emitters, each with an emission side. In other words, the semiconductor laser components each have in particular at least one coupling-out facet on a side surface. For example, the semiconductor laser components are each designed as monolithic components. In particular, the semiconductor laser components emit coherent electromagnetic radiation. The main emission direction is preferably aligned parallel to a main extension direction of the light guide structure.

In particular, the light guide structure is designed to be mechanically self-supporting. The light guide structure comprises, for example, at least one optical waveguide. The waveguide is preferably embedded in the light guide structure. In particular, the waveguide has a refractive index that differs from the refractive index of the material of the light guide structure surrounding it.

According to at least one embodiment of the optoelectronic module, each semiconductor laser component has at least one emission region. An emission region is in particular a region on a surface of a semiconductor laser component from which electromagnetic radiation emerges during the intended operation of the semiconductor laser component. For example, each emission region of at least one semiconductor laser component is assigned a waveguide of the light guide structure. Furthermore, the light guide structure can also have at least one emission region. For example, an emission region is a region in which electromagnetic radiation emerges from a waveguide arranged in the light guide structure.

According to at least one embodiment of the optoelectronic module, the semiconductor laser components are arranged on the light guide structure. In particular, the semiconductor laser components are mechanically stably connected to the light guide structure. The semiconductor laser components are preferably connected to the light guide structure using one of the following methods: soldering, gluing, sintering. AuSn is particularly suitable as a solder material. For example, a semiconductor laser component is mechanically firmly connected to the light guide structure via a mounting body. In such a case, the semiconductor laser component can be connected to the mounting body using one of the following methods: soldering, gluing, sintering. In other words, there does not have to be direct contact between the semiconductor laser component and the light guide structure. For example, the light guide structure is also applied to the mounting body using an interconnect process. An optical coupling between the semiconductor laser component and the light guide structure then takes place over a very small distance. In particular, a distance between a semiconductor laser component and an end face of the light guide structure is less than 5 µm, preferably less than 1 pm and particularly preferably less than 0.2 pm.

According to at least one embodiment of the optoelectronic module, the light guide structure has at least one end face that is aligned transversely to the main emission direction. The end face is aligned transversely, in particular perpendicularly to the main emission direction of the semiconductor laser components. This advantageously facilitates coupling of electromagnetic radiation into the end face of the light guide structure.

According to at least one embodiment of the optoelectronic module, at least one of the semiconductor laser components couples at least a predominant part of its electromagnetic radiation emitted during operation into an end face of the light guide structure. Here and in the following, a predominant part is understood to mean a proportion of more than 50%. For example, only one semiconductor laser component couples a predominant part of its electromagnetic radiation emitted during operation into an end face of the light guide structure. operation into the light guide structure. In other words, further semiconductor laser components in particular do not couple into the light guide structure, but emit their electromagnetic radiation directly. In particular, at least 40%, preferably at least 60% and particularly preferably at least 80% of the optical output power of at least one of the semiconductor laser components is coupled into the light guide structure.

• - jedes Halbleiterlaserbauelement zumindest einen Emissionsbereich aufweist,
• - die Halbleiterlaserbauelemente an der Lichtleitstruktur angeordnet sind,
• - die Lichtleitstruktur zumindest eine Stirnseite aufweist, die quer zur Hauptabstrahlrichtung ausgerichtet ist, und
• - zumindest eines der Halbleiterlaserbauelemente zumindest einen überwiegenden Teil seiner im Betrieb emittierten elektromagnetischen Strahlung in eine Stirnseite der Lichtleitstruktur einkoppelt.

According to at least one embodiment, the optoelectronic module comprises a plurality of semiconductor laser components which are configured to emit electromagnetic radiation in a main emission direction and a radiation-permeable light guide structure, wherein

• - each semiconductor laser component has at least one emission region,
• - the semiconductor laser components are arranged on the light guide structure,
• - the light guide structure has at least one end face which is aligned transversely to the main emission direction, and
• - at least one of the semiconductor laser components couples at least a predominant part of its electromagnetic radiation emitted during operation into an end face of the light guide structure.

The optoelectronic module described here is based on the following considerations, among others: Very compact light sources are required in a large number of applications. For example, compact light sources are advantageous for projecting multi-colored image content onto a portable device. Conventional light sources often take up a large amount of space and emit electromagnetic radiation with little direction over a large area. Consequently, large and heavy optics are also required, which can further increase the dimensions of a portable light source.

The optoelectronic module described here makes use, among other things, of the idea of arranging a plurality of semiconductor laser components on a light guide structure and also partially coupling them into the light guide structure. This creates a particularly compact optoelectronic module. Electromagnetic radiation can advantageously be emitted in a directed manner over a small area. A downstream optic can therefore be very small and compact. By arranging the semiconductor laser components in this way using a light guide structure, short control lines can also be used, which facilitates high-frequency control of the semiconductor laser components.

According to at least one embodiment of the optoelectronic module, the emission regions of all semiconductor laser components lie in an ellipse with a major axis length of less than 250 µm and a minor axis length of less than 50 µm. Preferably, the emission regions of all semiconductor laser components lie in an ellipse with a major axis length of less than 150 pm and a minor axis length of less than 20 pm and particularly preferably, the emission regions of all semiconductor laser components lie in an ellipse with a major axis length of less than 20 µm and a minor axis length of less than 5 µm. Such a compact arrangement of the emission regions enables the use of advantageously particularly small downstream optical elements.

According to at least one embodiment of the optoelectronic module, the semiconductor laser component, which couples into a front side of the light guide structure, is designed to emit a main wavelength in the red spectral range. In particular, the semiconductor laser components are each designed to emit electromagnetic radiation with a main wavelength. A main wavelength describes here and below a wavelength at which an emission spectrum has a global intensity maximum. The red spectral range here and below is electromagnetic radiation with a main wavelength between 600 nm and 780 nm. An arrangement on the front side of the light guide structure enables particularly good heat dissipation. This is particularly advantageous for a semiconductor laser component that emits in the red spectral range. For example, additional heat sinks are arranged on the light guide structure and/or at least one of the semiconductor laser components in order to further improve heat dissipation. Alternatively, the semiconductor laser component, which couples into one end face of the light guide structure, is designed to emit a main wavelength in the green or blue spectral range.

According to at least one embodiment of the optoelectronic module, a semiconductor laser component is arranged on a top side of the light guide structure. The top side is arranged transversely, in particular perpendicularly to the front side of the light guide structure. In particular, at least two semiconductor laser components are arranged on the top side. The semiconductor laser components are arranged either directly on the light guide structure or with an advantageously as small a distance as possible from the light guide structure. For example, a mounting body is arranged between a semiconductor laser component and the light guide structure. Advantageously, the thickness of the mounting body is particularly small in order to achieve a small distance between the semiconductor laser component and the light guide structure. In particular, the mounting body has a thickness of less than 1000 pm, preferably less than 500 µm and particularly preferably less than 250 µm. An arrangement of two semiconductor laser components next to one another on the top side enables a particularly simple production of a compact optoelectronic module.

According to at least one embodiment of the optoelectronic module, the semiconductor laser components each comprise a plurality of emission regions. The emission regions can in particular be controlled independently of one another. Advantageously, several points can thus be represented independently of one another. For example, the semiconductor laser components are each a multiridge emitter with a plurality of ridge structures. Preferably, all emission regions of all semiconductor laser components lie in the ellipse with the dimensions described above.

According to at least one embodiment of the optoelectronic module, the light guide structure is formed with at least one of the following materials: aluminum nitride, silicon nitride, silicon oxide, aluminum oxide. Advantageously, a light guide structure formed with these materials can be provided particularly easily with optical structures, such as a waveguide.

According to at least one embodiment of the optoelectronic module, the light-guiding structure comprises a metallization that is formed with at least one of the following materials: Au, Ti, Pt, Sn. The metallization is preferably arranged on the top side and/or a bottom side of the light-guiding structure opposite the top side. The metallization can advantageously facilitate mounting of the semiconductor laser components on the light-guiding structure. In particular, the metallization serves for the electrical connection of one or more semiconductor laser components.

According to at least one embodiment of the optoelectronic module, a cross section of the light guide structure is reduced along the main emission direction. In other words, the light guide structure tapers in the emission direction. This can advantageously reduce the distance between the semiconductor laser components on the light guide structure. The reduction in the cross section can, for example, be step-like, continuous in at least some areas, or completely continuous. In particular, the reduction in the cross section is on one side.

According to at least one embodiment of the optoelectronic module, the light guide structure is designed as a photonic integrated circuit. A photonic integrated circuit or an integrated optical circuit is, for example, a device that integrates several photonic functions and as such is similar to an electronic integrated circuit.

According to at least one embodiment of the optoelectronic module, a ring resonator is formed in the light guide structure. A ring resonator is in particular an optical resonator that is used in laser technology and is usually used as a laser resonator. For example, a resonance frequency of the ring resonator can be influenced by temperature changes or the application of an electrical voltage.

According to at least one embodiment of the optoelectronic module, the light guide structure comprises a control circuit for at least one semiconductor laser component. The control circuit comprises, for example, an electrical driver circuit for one or more of the semiconductor laser components. Integration of the control circuit into the light guide structure advantageously results in a particularly short control path with short signal propagation times and thus enables high-frequency control of the semiconductor laser components.

According to at least one embodiment of the optoelectronic module, the light guide structure comprises a cavity in which a semiconductor laser component is arranged. In particular, the cavity extends from the top side into the light guide structure. Advantageously, the cavity does not completely penetrate the light guide structure. The cavity has a bottom surface and at least one side surface in the light guide structure. At least one side surface is oriented transversely, in particular perpendicularly, to the top side of the light guide structure and thus forms an end face of the light guide structure. The semiconductor laser component arranged in the cavity is preferably designed to emit electromagnetic radiation in the red spectral range.

According to at least one embodiment of the optoelectronic module, the cavity is closed by a mounting body on which a semiconductor laser component is mounted. The mounting body is formed, for example, with a ceramic material. The mounting body advantageously has a particularly high thermal conductivity. In particular, the mounting body completely closes the cavity. This advantageously creates a hermetic seal for the semiconductor laser component arranged in the cavity.

According to at least one embodiment of the optoelectronic module, at least three semiconductor laser components are arranged on the light guide structure. With the help of three semiconductor laser components, an RGB emitter can be produced particularly easily, which is capable of emitting a large number of desired mixed colors.

According to at least one embodiment of the optoelectronic module, the main wavelengths of all semiconductor laser components differ from one another. The first semiconductor laser component preferably emits electromagnetic radiation with at least a first main wavelength in the red spectral range. The second semiconductor laser component preferably emits electromagnetic radiation with at least a second main wavelength in the green spectral range. The green spectral range here and below is electromagnetic radiation with a main wavelength between 500 nm and 560 nm. The third semiconductor laser component preferably emits electromagnetic radiation with at least a third main wavelength in the blue spectral range. The blue spectral range here and below is electromagnetic radiation with a main wavelength between 440 nm and 475 nm. Alternatively or additionally, a semiconductor laser component can be designed to emit electromagnetic radiation in the infrared spectral range. Here and in the following, the infrared spectral range is defined as electromagnetic radiation with a main wavelength between 780 nm and 1000 nm. Alternatively, the semiconductor laser components are each designed to emit electromagnetic radiation with an identical main wavelength.

According to at least one embodiment of the optoelectronic module, the main emission directions of all semiconductor laser components run parallel to one another. Parallel emission advantageously simplifies the arrangement of subsequent optical elements.

According to at least one embodiment of the optoelectronic module, the light guide structure comprises a plurality of light guide elements, wherein each semiconductor laser component is assigned a light guide element. In particular, each light guide element is itself designed as a photonic integrated circuit. Preferably, each light guide element comprises at least one waveguide. Advantageously, each semiconductor laser component can thus be assigned a light guide element that is optimized for the main emission wavelength of the respective semiconductor laser component. In particular, the waveguides are optimized for the transmission of electromagnetic radiation with a wavelength of the respectively assigned semiconductor laser component.

A method for producing an optoelectronic module is also specified. The optoelectronic module can be produced in particular by means of the method described here. This means that all features disclosed in connection with the optoelectronic module are also disclosed for the method for producing an optoelectronic module and vice versa.

According to at least one embodiment of the method for producing an optoelectronic module, a radiation-permeable light-guiding structure is provided with a front side and a top side running transversely to the front side. A plurality of waveguides are preferably arranged in the light-guiding structure.

According to at least one embodiment of the method for producing an optoelectronic module, an active adjustment of a semiconductor laser component is carried out on a front side of the light guide structure. Active adjustment here and below is an adjustment during which an optoelectronic component emits radiation in accordance with its intended operation and wherein positioning of the component relative to an optical element takes place depending on a continuously measured transmission through the optical element. A particularly high positioning accuracy can advantageously be achieved in this way.

According to at least one embodiment of the method for producing an optoelectronic module, a semiconductor laser component is mounted on a top side of the light guide structure. The semiconductor laser component is mounted, for example, directly on the top side of the light guide structure. Alternatively, a mounting body is arranged between the light guide structure and the semiconductor laser component.

• - Bereitstellen einer strahlungsdurchlässigen Lichtleitstruktur mit einer Stirnseite und einer quer zur Stirnseite verlaufenden Oberseite,
• - aktive Justage von einem Halbleiterlaserbauelement auf einer Stirnseite der Lichtleitstruktur, und
• - Montage von einem Halbleiterlaserbauelement auf einer Oberseite der Lichtleitstruktur.

According to at least one embodiment of the method for producing an optoelectronic module, the method comprises the following steps:

• - Providing a radiation-permeable light guide structure with a front side and a top side running transversely to the front side,
• - active adjustment of a semiconductor laser component on one end face of the light guide structure, and
• - Mounting of a semiconductor laser component on a top side of the light guide structure.

According to at least one embodiment of the method for producing an optoelectronic module, the active adjustment of the light guide structure is carried out relative to the stationary semiconductor laser component. For example, surfaces for coupling on the light guide structure are adjusted relative to a stationary semiconductor laser component while the semiconductor laser component emits electromagnetic radiation. In this case, movement of the radiation-emitting semiconductor laser component can advantageously be dispensed with.

According to at least one embodiment of the method for producing an optoelectronic module, the assembly of a semiconductor laser component on a top side of the light guide structure is carried out by means of passive assembly. Passive assembly is an assembly in which an optoelectronic component is positioned in the switched-off state on a carrier body and only based on external fixed points. Passive assembly can advantageously be carried out particularly quickly and inexpensively, since no electrical control of the component to be positioned is necessary.

According to at least one embodiment of the method for producing an optoelectronic module, a further semiconductor laser component is mounted on the top side of the light guide structure. In particular, the further semiconductor laser component is mounted laterally next to the semiconductor laser component already arranged on the top side.

According to at least one embodiment of the method for producing an optoelectronic module, a further semiconductor laser component is mounted on a bottom side of the light guide structure opposite the top side.

• - Bereitstellen einer strahlungsdurchlässigen Lichtleitstruktur umfassend eine Mehrzahl von Lichtleitelementen,
• - aktive Justage von jeweils einem Halbleiterlaserbauelement zu jeweils einem Lichtleitelement.

According to at least one embodiment of the method for producing an optoelectronic module, the method comprises the following steps:

• - Providing a radiation-permeable light-guiding structure comprising a plurality of light-guiding elements,
• - active alignment of one semiconductor laser component to one light guide element.

According to at least one embodiment of the method for producing an optoelectronic module, a radiation-permeable light-guiding structure comprising a plurality of light-guiding elements is provided. In other words, the light-guiding structure is preferably designed in several parts. The light-guiding elements are mechanically connected to one another at least in places. For example, each light-guiding element comprises at least one waveguide.

According to at least one embodiment of the method for producing an optoelectronic module, an active adjustment of one semiconductor laser component to one light-guiding element is carried out. In other words, each semiconductor laser component is assigned a light-guiding element. Advantageously, each semiconductor laser component can be assigned a light-guiding element that is optimized for the main emission wavelength of the respective semiconductor laser component. Each light-guiding element can be actively adjusted separately to the associated semiconductor laser component. In addition, a rotation of the individual semiconductor laser components can also be compensated for, for example. This advantage applies primarily to semiconductor laser components with a plurality of emission regions. Consequently, an advantageously high coupling efficiency for all semiconductor laser components in the light-guiding structure can be achieved.

An optoelectronic module described here is particularly suitable for use as a compact laser light source in portable projection applications, near-to-eye applications, head-up displays, augmented displays or virtual reality displays.

Further advantages and advantageous embodiments and developments of the optoelectronic module emerge from the following embodiments shown in the figures.

• 1A und 1B schematische Ansichten eines hier beschriebenen optoelektronischen Moduls gemäß einem ersten Ausführungsbeispiel aus verschiedenen Blickrichtungen,
• 2A und 2B schematische Ansichten eines hier beschriebenen optoelektronischen Moduls gemäß einem zweiten Ausführungsbeispiel aus verschiedenen Blickrichtungen,
• 3 eine schematische Ansicht eines hier beschriebenen optoelektronischen Moduls gemäß einem dritten Ausführungsbeispiel,
• 4 eine schematische Ansicht eines hier beschriebenen optoelektronischen Moduls gemäß einem vierten Ausführungsbeispiel,
• 5A und 5B schematische Ansichten eines hier beschriebenen optoelektronischen Moduls gemäß einem fünften Ausführungsbeispiel aus verschiedenen Blickrichtungen,
• 6 eine schematische Ansicht eines hier beschriebenen optoelektronischen Moduls gemäß einem sechsten Ausführungsbeispiel, und
• 7A, 7B und 7C schematische Ansichten eines hier beschriebenen optoelektronischen Moduls gemäß einem siebten Ausführungsbeispiel aus verschiedenen Blickrichtungen.

Show it:

• 1A and 1B schematic views of an optoelectronic module described here according to a first embodiment from different viewing directions,
• 2A and 2 B schematic views of an optoelectronic module described here according to a second embodiment from different viewing directions,
• 3 a schematic view of an optoelectronic module described here according to a third embodiment,
• 4 a schematic view of an optoelectronic module described here according to a fourth embodiment,
• 5A and 5B schematic views of an optoelectronic module described here according to a fifth embodiment from different viewing directions,
• 6 a schematic view of an optoelectronic module described here according to a sixth embodiment, and
• 7A , 7B and 7C schematic views of an optoelectronic module described here according to a seventh embodiment from different viewing directions.

Identical, similar or similarly acting elements are provided with the same reference symbols in the figures. The figures and the proportions of the elements shown in the figures to one another are not to be regarded as being to scale. Rather, individual elements may be shown exaggeratedly large for better representation and/or better comprehensibility.

1A shows a schematic plan view of an optoelectronic module 1 described here according to a first embodiment. The optoelectronic module 1 comprises a plurality of semiconductor laser components 11, 12, 13, which are designed to emit electromagnetic radiation in a main emission direction Z, and a radiation-permeable light guide structure 20.

For example, the main wavelengths of all semiconductor laser components 11, 12, 13 differ from one another. The first semiconductor laser component 11 preferably emits electromagnetic radiation with at least a first main wavelength in the red spectral range. The second semiconductor laser component 12 preferably emits electromagnetic radiation with at least a second main wavelength in the green spectral range. The third semiconductor laser component 13 preferably emits electromagnetic radiation with at least a third main wavelength in the blue spectral range. Alternatively or additionally, a semiconductor laser component 11, 12, 13 can be designed to emit electromagnetic radiation in the infrared spectral range.

The main emission direction Z is aligned parallel to a main extension direction of the light guide structure 20. The semiconductor laser components 11, 12, 13 are arranged on the light guide structure 20 and mechanically connected to the light guide structure 20.

The light guide structure 20 has at least one end face 20A that is aligned transversely to the main emission direction Z. A first semiconductor laser component 11 is arranged on an end face 20A of the light guide structure 20. A first waveguide 210 is formed in the light guide structure 20. The first semiconductor laser component 11 couples at least a predominant part of its electromagnetic radiation emitted during operation into the end face 20A of the light guide structure 20 and consequently into the first waveguide 210 of the light guide structure 20. The first waveguide 210 runs parallel to the main emission direction Z. The first waveguide 210 extends completely through the light guide structure 20 in the main emission direction Z. The first semiconductor laser component 11 that couples into the end face 20A of the light guide structure 20 is designed to emit a main wavelength in the red spectral range.

The light guide structure 20 further comprises a metallization 50 which is formed with at least one of the following materials: Au, Ti, Pt, Sn. The metallization 50 is arranged on the top side 20B and a bottom side 20C of the light guide structure 20 opposite the top side 20B. By means of the metallization 50, mounting of the semiconductor laser components 11, 12, 13 on the light guide structure 20 can be advantageously facilitated. In particular, the metallization 50 serves for the electrical connection of the semiconductor laser components 11, 12, 13. The metallization 50 is arranged between the second semiconductor laser component 12 and the light guide structure 20.

The second semiconductor laser component 12 is designed to emit a main wavelength in the green spectral range in the main emission direction Z. Each semiconductor laser component 11, 12, 13 has an emission region 110, 120, 130. Furthermore, each semiconductor laser component 11, 12, 13 can be controlled independently of one another.

1B shows a schematic side view of an optoelectronic module 1 described here according to the first embodiment. The side view shows the third semiconductor laser component 13, which is arranged on the underside 20C of the light guide structure 20.

A metallization 50 is arranged between the third semiconductor laser component 13 and the light guide structure 20.

The arrangement of the semiconductor laser components 11, 12, 13 on the light guide structure 20 in combination with the coupling of the radiation of the first semiconductor laser component 11 into the light guide structure 20 enables a particularly close emission of electromagnetic radiation from all semiconductor laser components 11, 12, 13. The emission of the first semiconductor laser component 11 attached to the front side 20A takes place through the light guide structure 20. The semiconductor laser components 12, 13 arranged on the top side 20B and the bottom side 20C emit directly and without transmission through the light guide structure 20.

2A shows a schematic plan view of an optoelectronic module 1 described here according to a second embodiment. The second embodiment essentially corresponds to the 1A illustrated first embodiment. In contrast to the first embodiment, no metallization 50 is arranged between the semiconductor laser components 12, 13 and the light guide structure 20. For example, electrical contacting of the semiconductor laser components 11, 12, 13 takes place by means of a wire bonding process.

2 B shows a schematic plan view of an optoelectronic module 1 described here according to a second embodiment. The second embodiment essentially corresponds to the 1B illustrated first embodiment. In contrast to the first embodiment, the light guide structure 20 is tapered in the direction of the main emission direction Z. The cross section of the light guide structure 20 tapers in a step-like manner. In other words, a cross section of the light guide structure 20 decreases along the main emission direction Z in the form of one or more steps. The cross section of the light guide structure is to be viewed transversely, in particular perpendicularly to the main emission direction Z. By reducing the cross section of the light guide structure 20, a distance between the top side 20B and the bottom side 20C also decreases. In this way, a distance between the semiconductor laser components 11, 12, 13 on the light guide structure 20 can advantageously be reduced.

3 shows a schematic view of an optoelectronic module 1 described here according to a third embodiment. The third embodiment essentially corresponds to the 1A illustrated first embodiment. In contrast to the first embodiment, the light guide structure 20 is tapered in the direction of the main emission direction Z. The cross section of the light guide structure 20 tapers continuously over a part of the extension of the light guide structure along the main emission direction Z.

4 shows a schematic view of an optoelectronic module 1 described here according to a fourth embodiment. The fourth embodiment essentially corresponds to the 3 illustrated third embodiment. In contrast to the third embodiment, the light guide structure 20 is continuously tapered in the direction of the main emission direction Z along its entire extent. The second and third semiconductor laser components 12, 13 are thus mounted at an angle to one another. The main emission directions Z of the second and third semiconductor laser components 12, 13 are consequently aligned such that they intersect at a point. A focal point can advantageously be created in this way.

5A shows a schematic plan view of an optoelectronic module 1 described here according to a fifth embodiment. The fifth embodiment essentially corresponds to the 1A illustrated first embodiment. In contrast to the first embodiment, the semiconductor laser components 11, 12, 13 each comprise a plurality of emission regions 110, 120, 130. In particular, the semiconductor laser components 11, 12, 13 are each a multiridge emitter with a plurality of ridge structures. The emission regions 110, 120, 130 can each be controlled independently of one another. Advantageously, several points can be represented independently of one another in this way. Independent control also enables a particularly large dynamic range of the intensity of the emitted electromagnetic radiation.

The light guide structure 20 comprises a plurality of first waveguides 210. Each emission region 110 of the first semiconductor laser component 11 is assigned a waveguide 220 of the light guide structure 20.

5B shows a schematic plan view of an optoelectronic module 1 described here according to a fifth embodiment. The fifth embodiment essentially corresponds to the 1B illustrated first embodiment. In the side view, the different emission areas 110, 120, 130 lie one above the other and are thus only perceptible as a single emission area 110, 120, 130.

6 shows a schematic view of an optoelectronic module 1 described here according to a sixth embodiment. In contrast to the embodiments shown previously, the light guide structure 20 according to the sixth embodiment is designed in several parts. The light guide structure 20 comprises a first light guide element 201, a second light guide element 202 and a third light guide element 203. The light guide elements 201, 202, 203 are mechanically connected to one another. Each light guide element 201, 202, 203 comprises at least one waveguide 210, 220, 230.

Each semiconductor laser component 11, 12, 13 is assigned a light-guiding element 201, 202, 203. Advantageously, each semiconductor laser component 11, 12, 13 can be assigned a light-guiding element 201, 202, 203 that is optimized for the main emission wavelength of the respective semiconductor laser component 11, 12, 13. In particular, the waveguides 210, 220, 230 are designed for the transmission of electromagnetic radiation with a wavelength of the respectively assigned semiconductor laser component 11, 12, 13.

Further advantageously, each light guide element 201, 202, 203 can be adjusted separately to the associated semiconductor laser component 11, 12, 13. In addition, a rotation of the individual semiconductor laser components 11, 12, 13 can also be compensated for in this way. This advantage primarily applies to semiconductor laser components 11, 12, 13 with a plurality of emission regions 110, 120, 130. Consequently, an advantageously high coupling efficiency can be achieved for all semiconductor laser components 11, 12, 13.

7A shows a schematic sectional view of an optoelectronic module 1 described here according to a seventh exemplary embodiment. The optoelectronic module 1 comprises a light guide structure 20 with a cavity 30 and three semiconductor laser components 11, 12, 13. The cavity 30 extends from the top side 20B of the light guide structure 20. Advantageously, the cavity 30 does not completely penetrate the light guide structure 20. The cavity 30 has a bottom surface and at least one side surface in the light guide structure 20. At least one side surface is oriented transversely, in particular perpendicularly, to the top side 20B of the light guide structure 20 and thus forms an end surface 20A of the light guide structure 20.

A first semiconductor laser component 11 is arranged in the cavity 30. The first semiconductor laser component 11 is arranged in the cavity 30 in such a way that, during operation, it couples electromagnetic radiation into the light guide structure 20 through the end face 20A formed in the cavity 30. The first semiconductor laser component 11 arranged in the cavity 30 is designed to emit electromagnetic radiation in the red spectral range.

The first semiconductor laser component 11 is arranged on a mounting body 40. A second semiconductor laser component 12 and a third semiconductor laser component 13 are arranged on the upper side 20B of the light guide structure 20. The second semiconductor laser component 12 is designed to emit a main wavelength in the green spectral range. The third semiconductor laser component 13 preferably emits electromagnetic radiation with at least a third main wavelength in the blue spectral range.

The mounting body 40 is formed, for example, with a ceramic material. The mounting body 40 advantageously has a particularly high thermal conductivity. An arrangement of the first semiconductor laser component 11 on the mounting body 40 enables particularly good heat dissipation. This is particularly advantageous for a semiconductor laser component 11 that emits in the red spectral range. For example, heat sinks are also arranged on the light guide structure 20 and/or on at least one of the semiconductor laser components 11, 12, 13 in order to further improve heat dissipation.

7B shows a schematic plan view of an optoelectronic module 1 described here according to the seventh embodiment. The cavity 30 can be completely closed by the mounting body 40. This advantageously creates a hermetic seal for the semiconductor laser component 11 arranged in the cavity 30.

For example, the light guide structure 20 additionally comprises a control circuit for at least one semiconductor laser component 11, 12, 13. The control circuit comprises, for example, an electrical driver circuit for one or more of the semiconductor laser components 11, 12, 13. Integration of the control circuit into the light guide structure 20 advantageously results in a particularly short control path with short signal propagation times and thus enables high-frequency control of the semiconductor laser components 11, 12, 13.

7C shows a schematic front view of an optoelectronic module 1 described here according to the seventh exemplary embodiment. All semiconductor laser components 11, 12, 13 each comprise a plurality of emission regions 110, 120, 130. The emission regions 110, 120, 130 of all semiconductor laser components 11, 12, 13 are arranged in an ellipse with a major axis length HA of less than 250 µm and a minor axis length NA of less than 50 µm. Preferably, the emission regions 110, 120, 130 of all semiconductor laser components 11, 12, 13 are located in an ellipse with a major axis length HA of less than 150 µm and a minor axis length NA of less than 20 µm, and particularly preferably, the emission regions 110, 120, 130 of all semiconductor laser components 11, 12, 13 are located in an ellipse with a major axis length HA of less than 20 µm and a minor axis length NA of less than 5 µm. Such a compact arrangement of the emission regions 110, 120, 130 enables the use of particularly compact downstream optical elements.

The invention is not limited by the description based on the embodiments. Rather, the invention includes any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or embodiments.

List of reference symbols

1

optoelectronic module

11

first semiconductor laser device

12

second semiconductor laser component

13

third semiconductor laser device

20

Light guide structure

20A

Front side

20B

Top

20C

bottom

30

cavity

40

Mounting body

50

Metallization

110

first emission area

120

second emission area

130

third emission area

201

first light guide element

202

second light guide element

203

third light guide element

210

first waveguide

220

second waveguide

230

third surfer

Z

Main emission direction

N/A

Minor axis

HA

Main axis

Claims (20)

Optoelectronic module (1) comprising a plurality of semiconductor laser components (11, 12, 13) which are designed to emit electromagnetic radiation in a main emission direction (Z) and a radiation-permeable light guide structure (20), wherein - each semiconductor laser component (11, 12, 13) has at least one emission region (110, 120, 130), - the semiconductor laser components (11, 12, 13) are arranged on the light guide structure (20), - the light guide structure (20) has at least one end face (20A) which is aligned transversely to the main emission direction (Z), and - at least one of the semiconductor laser components (11, 12, 13) couples at least a predominant part of its electromagnetic radiation emitted during operation into an end face (20A) of the light guide structure (20). Optoelectronic module (1) according to the preceding claim, in which - the emission regions (110, 120, 130) of all semiconductor laser components (11, 12, 13) lie in an ellipse with a major axis length (HA) of less than 250 µm and a minor axis length (NA) of less than 50 µm. Optoelectronic module (1) according to one of the preceding claims, in which - the semiconductor laser component (11, 12, 13) which couples into an end face (20A) of the light guide structure (20) is designed to emit a main wavelength in the red spectral range. Optoelectronic module (1) according to at least one of the preceding claims, in which - a semiconductor laser component (11, 12, 13) is arranged on an upper side (20B) of the light guide structure (20). Optoelectronic module (1) according to at least one of the preceding claims, in which - the semiconductor laser components (11, 12, 13) each comprise a plurality of emission regions (110, 120, 130). Optoelectronic module (1) according to at least one of the preceding claims, in which - the light guide structure (20) is formed with at least one of the following materials: aluminum nitride, silicon nitride, silicon oxide, aluminum oxide. Optoelectronic module (1) according to at least one of the preceding claims, in which - the light-guiding structure (20) comprises a metallization (50) which is formed with at least one of the following materials: Au, Ti, Pt, Sn. Optoelectronic module (1) according to at least one of the preceding claims, in which - a cross section of the light guide structure (20) decreases along the main emission direction (Z). Optoelectronic module (1) according to at least one of the preceding claims, in which - the light guide structure (20) is designed as a photonic integrated circuit. Optoelectronic module (1) according to the preceding claim, in which - a ring resonator is formed in the light guide structure (20). Optoelectronic module (1) according to one of the preceding claims, in which - the light guide structure (20) comprises a control circuit for at least one semiconductor laser component (11, 12, 13). Optoelectronic module (1) according to at least one of the preceding claims, in which - the light guide structure (20) comprises a cavity (30) in which a semiconductor laser component (11, 12, 13) is arranged. Optoelectronic module (1) according to the preceding claim, in which - the cavity (30) is closed by a mounting body (40) on which a semiconductor laser component (11, 12, 13) is mounted. Optoelectronic module (1) according to at least one of the preceding claims, in which - at least three semiconductor laser components (11, 12, 13) are arranged on the light guide structure (20). Optoelectronic module (1) according to at least one of the preceding claims, in which - the semiconductor laser components (11, 12, 13) are each designed to emit electromagnetic radiation with a main wavelength, wherein the main wavelengths of all semiconductor laser components (11, 12, 13) differ from one another. Optoelectronic module (1) according to at least one of the preceding claims, in which - the main emission directions (Z) of all semiconductor laser components (11, 12, 13) run parallel to one another. Optoelectronic module (1) according to at least one of the preceding claims, in which - the light-guiding structure (20) comprises a plurality of light-guiding elements (201, 202, 203), wherein each semiconductor laser component (11, 12, 13) is assigned a light-guiding element (201, 202, 203). Method for producing an optoelectronic module (1) comprising the following steps: - providing a radiation-permeable light-guiding structure (20) with a front side (20A) and a top side (20B) running transversely to the front side (20A), - active adjustment of a semiconductor laser component (11, 12, 13) on a front side (20A) of the light-guiding structure (20), and - mounting of a semiconductor laser component (11, 12, 13) on a top side (20A) of the light-guiding structure (20). Method for producing an optoelectronic module (1), wherein - the active adjustment of the light guide structure (20) takes place relative to the stationary semiconductor laser component (11, 12, 13). Method for producing an optoelectronic module (1), wherein - the mounting of a semiconductor laser component (11, 12, 13) on an upper side (20A) of the light guide structure (20) is carried out by means of passive mounting.

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