DE102022202204A1 - Process for manufacturing a semiconductor device and semiconductor device - Google Patents

Abstract

In at least one embodiment, the method for producing a semiconductor component (100) comprises a step A), in which a carrier (1) with a semiconductor chip (2) arranged thereon is provided. In a step B), a shaped body (3, 4) is produced on the carrier laterally next to the semiconductor chip by means of an additive method.

Description

A method for producing a semiconductor component is specified. In addition, a semiconductor component is specified.

A problem to be solved is to provide an improved method for manufacturing a semiconductor device, for example a method with which a more compact semiconductor device can be manufactured. A further problem to be solved consists in specifying a semiconductor component which can be produced using such a method.

These objects are achieved, inter alia, by the subject matter of claims 1 and 14. Advantageous refinements and developments are the subject matter of the remaining dependent patent claims and are also apparent from the following description and the figures.

First, the method for manufacturing a semiconductor device is given.

In accordance with at least one embodiment, the method comprises a step A), in which a carrier with a semiconductor chip arranged thereon is provided. For example, the semiconductor chip is arranged and fixed on a top side of the carrier. For example, lateral extents of the carrier are greater than the thickness of the carrier. The lateral dimensions of the carrier are, for example, larger than the lateral dimensions of the semiconductor chip. The carrier can protrude beyond the semiconductor chip in all lateral directions.

A lateral direction along which a lateral extent is measured is presently a direction parallel to the top side of the carrier and/or to the main plane of extent of the carrier and/or to the main plane of extent of the semiconductor chip. The thickness of the carrier and a thickness of the semiconductor chip are measured perpendicular to the top side of the carrier or the main extension planes mentioned. The upper side of the carrier is, for example, parallel to the main extension plane of the carrier. The main extension planes of the semiconductor chip and of the carrier can be parallel to one another.

The carrier can be a carrier that remains in the finished semiconductor component, for example a connection carrier to which the semiconductor chip is electrically connected. For example, the carrier is a QFN carrier or a ceramic carrier with integrated contact structures or a metal core board or the like. Alternatively, the carrier can also be a temporary carrier or auxiliary carrier which does not remain in the finished semiconductor component but is detached before the semiconductor component is completed. For example, the carrier is part of a clamping device, English: Chuck.

The semiconductor chip can be electrically connected to the carrier, for example via soldered connections. The semiconductor chip can be a surface-mountable semiconductor chip in which all the contact points required for electrical contacting are arranged on an underside of the semiconductor chip facing the carrier. Alternatively, the semiconductor chip can also be electrically connected to the carrier via one or more contact wires. For example, at least one contact point of the semiconductor chip is then arranged on a top side of the semiconductor chip facing away from the carrier. The upper side and the lower side of the semiconductor chip are, for example, parallel to the main extension plane of the semiconductor chip.

The semiconductor chip can be an optoelectronic semiconductor chip for generating or absorbing electromagnetic radiation, in particular UV radiation or visible light or IR radiation. For example, a semiconductor layer sequence of the semiconductor chip is then based on a III-V compound semiconductor material, such as AlInGaN. The top side of the semiconductor chip can be a main emission area of the semiconductor chip.

Alternatively or additionally, the semiconductor chip can also have one or more transistors, for example MOSFETs. The semiconductor chip is then an IC chip, for example.

According to at least one embodiment, in a step B) of the method, a shaped body is produced on the carrier laterally, ie laterally, next to the semiconductor chip. In particular, the shaped body is produced on the upper side of the carrier. The molded body can protrude beyond the semiconductor chip in the direction away from the carrier or can be flush with the semiconductor chip, or the semiconductor chip can protrude beyond the molded body in the direction away from the carrier. The molded body is made from an electrically insulating material, for example. The electrically insulating material can include or consist of a polymer or a plastic. Alternatively, the shaped body can also be produced from a metal.

The shaped body can be produced directly on the carrier. For example, the shaped body is then integrally connected to the carrier. The shaped body is produced, for example, in such a way that it runs partially or completely around the semiconductor chip in the lateral direction. The semiconductor chip is in a plan view of the top side of the carrier then largely or completely surrounded by a continuous web formed by the shaped body without interruptions. The shaped body can run like a frame around the semiconductor chip.

A molded body is understood here to mean, in particular, a body with a predetermined geometric shape. The shaped body produced is in particular a solid body. For example, the shaped body contributes to the stability of the finished semiconductor component. The shaped body produced is, for example, self-supporting.

According to at least one embodiment, the shaped body is produced by means of an additive process, also referred to as 3D printing. In particular, the shaped body is produced with the aid of a device for the additive manufacturing of a component.

Additive methods are understood in particular to mean methods in which a starting material is provided and through a targeted, local, chemical and/or physical action on the starting material, this is cohesively connected (hardened) in predetermined areas and is thus built up into a shaped body. The effect can be, in particular, a targeted, local irradiation of electromagnetic radiation, for example UV radiation or laser light. The starting material is in liquid form or powder form, for example.

In an additive process, a carrier, for example the carrier mentioned above, can be brought into contact with an oversupply of the starting material. Only part of this starting material is then cured by local action, particularly in the region of the support. The starting material can be brought into contact with the carrier in a form which, in terms of volume and geometry, differs significantly from the volume and geometry of the shaped body produced.

Casting and compression molding processes, such as casting, transfer molding and film-assisted transfer molding, are not understood as additive processes. In contrast to additive processes, the entire starting material that comes into contact with the carrier is cured here and not just in certain areas. The form in which the starting material is provided, ie brought into contact with the support, is similar or identical to the form of the finished shaped body.

In at least one embodiment, the method for producing a semiconductor component comprises a step A), in which a carrier with a semiconductor chip arranged thereon is provided. In a step B), a shaped body is produced on the carrier laterally next to the semiconductor chip by means of an additive method.

The present invention is based, inter alia, on the finding that in many production processes for molded bodies around a semiconductor chip, for example in the production of housings, the overall size of the resulting semiconductor component (packages) is influenced by tolerances to be observed. For example, semiconductor chips are typically placed into an existing cavity of an injection molded package. The placement accuracy requires the cavity to be larger than the semiconductor die, which increases the overall size of the semiconductor device. When overmolding semiconductor chips, for example when potting or film-supported transfer molding, the molded bodies produced often have to be ground down, for example to expose contacts. In addition, less precise or individualizable structures can be produced.

By using an additive method, the shaped body, for example in the form of a housing, can be produced much closer to the semiconductor chip. As a result, smaller semiconductor components can be realized. In addition, the short design adaptation cycles, the flexibility in the shapes of the molded bodies and the possibility of individualization, for example special customer branding, are advantageous with additive processes.

In accordance with at least one embodiment, the shaped body is produced using a digital light processing (DLP) device. The shaped body can therefore be produced by means of a DLP process. DLP processes are additive processes in which radiation is projected pixel-fine onto the surface of a source material using a projector. The starting material then solidifies in the irradiated areas. The projector has a radiation source, for example a laser or an arc lamp, and a modulator, for example in the form of a liquid crystal display or a digital mirror unit. Radiation from the radiation source is radiated onto the modulator, which modulates a digital image onto the radiation. The starting material is then irradiated with this image and hardened locally, pixel-by-pixel.

In accordance with at least one embodiment, the shaped body is produced directly adjoining at least one side area of the semiconductor chip. This means that the shaped body is in direct mechanical contact with the side surface after it has been produced. The shaped body can partially or fully conform to the side surface reshape. For example, the shaped body is produced adjacent to all side areas of the semiconductor chip.

A side face of the semiconductor chip is understood here to mean a face of the semiconductor chip that delimits the semiconductor chip in the lateral direction. For example, the semiconductor chip has four side surfaces. A side surface of the semiconductor chip runs transversely or perpendicularly to the top or bottom of the semiconductor chip or transversely or perpendicularly to the top of the carrier.

According to at least one embodiment, the shaped body is produced with a shape that tapers in the direction away from the carrier or away from the top side of the carrier. For example, a width of the shaped body, measured in a lateral direction, in an area closest to the wearer is at least 1.5 times or at least twice as large as in an area furthest away from the wearer.

According to at least one embodiment, the shaped body is produced with a recess in which a connection area of the carrier is exposed. The recess can be completely surrounded and delimited by the shaped body in the lateral direction. The recess can therefore be a hole in the shaped body, which extends in the direction of the carrier up to the carrier. The connection area is, for example, a metallic area of the carrier. For example, part of the molded body is arranged in the lateral direction between the connection area and the semiconductor chip.

According to at least one embodiment, after step B), an electrical connection is established between the semiconductor chip and the connection area. The electrical connection extends through the recess. For example, the electrical connection electrically conductively connects the contact point on the top side of the semiconductor chip to the connection area on the top side of the carrier. The electrical connection can be conformal, ie post-forming, resting on the connection area, the contact point and the shaped body lying between them. In the area of the recess, the electrical connection can lie conformingly on a boundary surface of the recess formed by the shaped body.

According to at least one embodiment, the semiconductor chip is embedded in a starting material in step B). The starting material is, for example, in liquid form or as a powder.

According to at least one embodiment, in step B), after embedding the semiconductor chip in the starting material, the shaped body is produced by irradiating predetermined areas of the starting material. The irradiated areas are irradiated pixel by pixel, for example with the aid of a projector as described above.

After irradiation with a predetermined radiation, for example UV radiation or laser radiation, the irradiated areas harden. For example, the irradiated areas of a liquid starting material solidify. In the case of powdery starting materials, the powder can first melt in the irradiated areas and then harden. For example, the starting material is a liquid polymer, such as a resin. The starting material is selected for example from: epoxy compounds, ABS, TPU. The starting material can contain appropriate additives in order to achieve rapid UV or light curing. The starting material can also have additional filler particles, for example to improve the mechanical properties and/or to adjust the thermal conductivity.

When embedding the semiconductor chip in the starting material, the side walls of the semiconductor chip, for example, are reshaped to conform to the starting material. For example, in step B) the semiconductor chip is immersed in a bath of the starting material.

In step B), the starting material is, for example, in a container and extends to a bottom surface in the container. The bottom surface can be formed by the container itself or by a structure placed in the container, such as a Vet foil. For example, the starting material will be irradiated from outside the container through the bottom surface. In the area of the bottom surface, the container and optionally the structure inserted is preferably transparent for the radiation used, so that irradiation from outside is possible.

In step B), the semiconductor chip can, for example, be placed in the container in such a way that its top side rests on the bottom surface and thus remains free of the starting material. Alternatively, the semiconductor chip can also be placed in the container in such a way that the top side of the semiconductor chip is at a distance from the bottom surface and the top side of the semiconductor chip is covered by the starting material.

The radiation used has a limited penetration depth into the source material. Consequently, the starting material is usually only in the area of the irradiated area, for example in the area of the floor surface. For example, the penetration depth of the radiation is at most 100 µm. In a single irradiation step, therefore, only one layer of the molding is produced with a maximum of this penetration depth. If the molding is to be thicker, it can be built up in several layers. For this purpose, the layer produced in a single irradiation step is removed from the bottom surface, for example, so that starting material again collects between the produced layer and the bottom surface, which can be cured in a further irradiation step to form a further layer.

In accordance with at least one embodiment, the shaped body is produced as a single layer in a single irradiation step. For example, the entire shaped body is produced by irradiation while the distance between the carrier and the bottom surface of the container is kept constant. As explained above, only a layer with approximately the penetration depth at the bottom surface is produced upon irradiation. The carrier must therefore be close enough to the bottom surface in step B) so that the individual layer produced is also produced on the carrier. The thickness of the resulting shaped body, measured perpendicularly to the upper side of the carrier, then corresponds at most or approximately to the depth of penetration of the radiation into the starting material. For example, the thickness of the molded article after it is produced is 100 µm at most.

The thickness of the semiconductor chip can be adapted to the penetration depth of the radiation, for example in such a way that the single-layer molded body produced is approximately as thick as the semiconductor chip and/or protrudes beyond the semiconductor chip. “Roughly” here means, for example, a maximum deviation of 5%.

In accordance with at least one embodiment, the shaped body is produced in layers in a plurality of irradiation steps. In this case, for example, each layer of the shaped body is produced in one irradiation step with the distance between the carrier and the bottom surface of the container being kept constant. For the formation of each subsequent layer, the distance between the carrier and the bottom surface of the container is increased, for example by at most or about the penetration depth. In this way, the molding can be produced in layers.

To change the distance between the carrier and the bottom surface, the device with which the method is carried out has, for example, a motor with which either the carrier with the semiconductor chip or the container can be moved stepwise or continuously.

In accordance with at least one embodiment, the semiconductor chip is introduced into a recess of a shaping structure in step B). The shaping structure can at least partially, ie partially or completely, form the bottom surface in the container. In the area of the recess, the bottom surface is then on a different level than in the area next to the recess. The recess has, for example, a smaller lateral extent than the carrier and/or a larger lateral extent than the semiconductor chip.

The shaping structure can be a foil or a glass plate, which is inserted into the container, for example. However, the container itself can also form the shaping structure.

According to at least one embodiment, the recess is or will be partially filled with the starting material in step B). In particular, all areas of the recess that are not occupied by the semiconductor chip or other components of the semiconductor device are or will be filled with the starting material.

According to at least one embodiment, the shaped body is produced by irradiating the starting material in the area of the recess. The shape of the recess can at least partially determine the shape of the shaped body. For example, at least boundary surfaces of the shaping structure that delimit the recess in the lateral direction are irradiated. The shaped body produced in this way then has, for example, the shapes of the irradiated areas of the boundary surfaces of the recess.

In accordance with at least one embodiment, the molded body is a housing for the semiconductor chip. For example, the housing is designed to protect the semiconductor chip. For example, the housing can be opaque to UV radiation and/or visible light and/or liquids and/or gases.

In accordance with at least one embodiment, the semiconductor chip is an optoelectronic semiconductor chip for generating a primary radiation. The primary radiation is, for example, UV radiation and/or visible light and/or IR radiation.

In accordance with at least one embodiment, the shaped body is a conversion element for converting the primary radiation. The conversion element has, for example, a matrix material, for example made of polymer, in which phosphor particles, for example inorganic or organic phosphor particles, are embedded.

In accordance with at least one embodiment, in step B), a shaped body is produced laterally, ie laterally, at a distance from the semiconductor chip and by means of an additive method. The shaped body is, for example, a housing such as the housing described above. For example, the shaped body is spaced apart from the semiconductor chip in all lateral directions. In particular, all side areas of the semiconductor chip are then free of the molded body.

In accordance with at least one embodiment, in a step C), a further molded body is produced directly adjoining a side face of the semiconductor chip. The further shaped body can, for example, be produced laterally completely around the semiconductor chip and/or be produced adjoining all side surfaces of the semiconductor chip. The further shaped body can be a conversion element or a protective element, for example.

Step B) can be carried out before step C). Alternatively, step C) is carried out before step B) or steps B) and C) are carried out simultaneously.

After the production of the shaped body and the further shaped body, the further shaped body is arranged, for example, laterally between the semiconductor chip and the shaped body. The further shaped body can then border on side areas of the shaped body which face the semiconductor chip. For example, the additional molded body completely fills the area between the molded body and the semiconductor chip.

According to at least one embodiment, the further shaped body is produced by means of an additive method. For example, the further molded body is produced using the same additive process as the molded body. All features disclosed in connection with the shaped body, in particular with regard to its production, are also disclosed for the further shaped body.

Alternatively, however, the further shaped body can also be produced by means of a different method, for example by casting or film-supported transfer molding.

Next, the semiconductor component is specified. The semiconductor component can be produced in particular using the method described here. All features disclosed in connection with the method are therefore also disclosed for the semiconductor component and vice versa.

In accordance with at least one embodiment, the semiconductor component has a semiconductor chip and a molded body laterally around the semiconductor chip. The semiconductor chip and/or the molded body can be arranged on a carrier of the semiconductor component.

According to at least one embodiment, the shaped body is produced by means of an additive method. The person skilled in the art recognizes when the molded body is produced by means of an additive process. In particular, such a shaped body can have a plurality of layers stacked on top of one another, which can be seen, for example, under a microscope. In addition, shaped bodies produced by means of additive processes can have particularly sharp edges and/or smooth surfaces and/or precise structures that cannot be produced with other production processes.

For example, the shaped body is free from traces of a physical and/or chemical removal process. Traces of this kind can indicate a subtractive process, which is preferably not used in the case of additively manufactured shaped bodies.

The shaped body is preferably free of any traces that indicate the use of a casting tool. Such marks can be scars or sutures or noses.

In accordance with at least one embodiment, the semiconductor component is produced using a method in accordance with one of the embodiments described here.

According to at least one embodiment, the shaped body is a housing. For example, the housing is in direct contact with side faces of the semiconductor chip. For example, the housing conforms to all side surfaces of the semiconductor chip.

In accordance with at least one embodiment, the housing has at least one side surface facing away from the semiconductor chip and a top side. In particular, the upper side runs transversely to the side surface or surfaces. The top of the housing is, for example, a side facing away from the carrier of the semiconductor component. The side surface of the housing can then extend between the carrier and the top.

In accordance with at least one embodiment, the top side of the housing is flush with a top side of the semiconductor chip. For example, a step between the top of the semiconductor chip and the top of the package has a height of at most 15 µm, or at most 10 µm, or at most 1 µm, or at most 100 nm.

According to at least one embodiment, an edge between the side surface of the housing and the top of the housing has a radius of curvature of at most 500 nm or at most 100 nm.

Both the flush termination between the upper sides of the housing and the semiconductor chip and the small radius of curvature of the edge between the side surface and the upper side of the housing are clear features that indicate production using an additive method. Such particularly flush finishes and particularly sharp edges cannot be achieved with other methods.

A method described here for producing a semiconductor component and a semiconductor component described here are explained in more detail below with reference to drawings using exemplary embodiments. The same reference symbols indicate the same, similar or identically acting elements in the individual figures. However, no references to scale are shown here; on the contrary, individual elements may be shown in exaggerated size for better understanding. To the extent that elements in the various figures have the same function, their description is not repeated for each of the following figures. For the sake of clarity, elements may not have corresponding reference numbers in all figures.

• 1 ein Ausführungsbeispiel einer DLP-Vorrichtung,
• 2 bis 6 ein erstes Ausführungsbeispiel des Verfahrens zur Herstellung eines Halbleiterbauteils in verschiedenen Positionen sowie ein erstes Ausführungsbeispiel des Halbleiterbauteils,
• 7 bis 9 ein zweites Ausführungsbeispiel des Verfahrens zur Herstellung eines Halbleiterbauteils in verschiedenen Positionen sowie ein zweites Ausführungsbeispiel des Halbleiterbauteils,
• 10 bis 14 ein drittes Ausführungsbeispiel des Verfahrens zur Herstellung eines Halbleiterbauteils in verschiedenen Positionen sowie ein drittes Ausführungsbeispiel des Halbleiterbauteils,
• 15 bis 17 ein viertes Ausführungsbeispiel des Verfahrens zur Herstellung eines Halbleiterbauteils in verschiedenen Positionen sowie ein viertes Ausführungsbeispiel des Halbleiterbauteils,
• 18 bis 20 ein fünftes Ausführungsbeispiel des Verfahrens zur Herstellung eines Halbleiterbauteils in verschiedenen Positionen sowie ein fünftes Ausführungsbeispiel des Halbleiterbauteils,
• 21 bis 24 ein sechstes Ausführungsbeispiel des Verfahrens zur Herstellung eines Halbleiterbauteils in verschiedenen Positionen sowie ein sechstes Ausführungsbeispiel des Halbleiterbauteils.

Show it:

• 1 an embodiment of a DLP device,
• 2 until 6 a first exemplary embodiment of the method for producing a semiconductor component in different positions and a first exemplary embodiment of the semiconductor component,
• 7 until 9 a second exemplary embodiment of the method for producing a semiconductor component in different positions and a second exemplary embodiment of the semiconductor component,
• 10 until 14 a third exemplary embodiment of the method for producing a semiconductor component in different positions and a third exemplary embodiment of the semiconductor component,
• 15 until 17 a fourth exemplary embodiment of the method for producing a semiconductor component in different positions and a fourth exemplary embodiment of the semiconductor component,
• 18 until 20 a fifth exemplary embodiment of the method for producing a semiconductor component in different positions and a fifth exemplary embodiment of the semiconductor component,
• 21 until 24 a sixth exemplary embodiment of the method for producing a semiconductor device in different positions, and a sixth exemplary embodiment of the semiconductor device.

1 shows an exemplary embodiment of a so-called DLP device 200. “DLP” here stands for the English expression “digital light processing”. The device 200 includes a clamping device 201, English: Chuck. This can be moved with respect to a container 202 by means of a motor 206 . The container 202 is filled with a starting material 30, for example a liquid polymer 30, which hardens or solidifies when exposed to electromagnetic radiation, for example UV radiation. At least in the area of a bottom surface of the container 202, this is transparent to the radiation with which the polymer can be cured.

The device 200 comprises a projector 203, 204, 205 with a radiation source 205, for example an arc lamp. The projector 203, 204, 205 also has a modulator 203 in the form of a liquid crystal display or a digital mirror unit. The modulator 203 modulates a digital image onto the radiation from the radiation source 205 . The modulated radiation is then optionally directed through the bottom of the container 202 onto the liquid polymer 30 via a lens 204 of the projector. The polymer 30 hardens in the pixel-fine irradiated areas near the floor surface.

In order to produce a body with almost any shape (molded body), the jig 201 is first immersed in the liquid polymer 30 until there is only a small distance between the jig 201 and the bottom of the container 202 . Using the projector 203, 204, 205, the layer of liquid polymer 30 between the clamping device 201 and the bottom surface in the container 202 is then partially hardened. This creates a first layer of a molded body 3 to be produced. Subsequently, the clamping device 201 is raised one step, whereby the distance to the bottom surface is increased and liquid polymer 30 collects between the first hardened layer and the bottom surface. This is then also cured in certain areas by irradiation using the projector 203, 204, 205, as a result of which a second layer of the shaped body to be produced, which is connected to the first layer, is produced. These steps will repeated until the molded body 3 is completed. In the case of 1 the molded body 3 produced is a housing around a semiconductor chip 2.

Such a DLP device 200 can thus be used to produce molded bodies for a semiconductor device around a semiconductor chip. This is explained further in the exemplary embodiments described below.

In the 2 a position in a first exemplary embodiment of the method is shown. On the clamping device 201 of the DLP device 1 a carrier 1 with a semiconductor chip 2 arranged thereon is applied. The carrier 1 is, for example, a connection carrier on which the semiconductor chip 2 is electrically connected and fixed. The carrier 1 is, for example, an etched Cu lead frame.

In the present case, the semiconductor chip 2 is, for example, an optoelectronic semiconductor chip. During operation, the semiconductor chip 2 generates primary radiation, for example in the UV range or in the visible spectral range. The semiconductor chip 2 is a surface mountable semiconductor chip, for example a flip chip. Contact points of the semiconductor chip 2 are arranged on an underside of the semiconductor chip 2 which faces the carrier 1 .

A top side 22 of the semiconductor chip 2 facing away from the carrier 1 faces the container 202 with the liquid polymer 30 located therein. Side faces 21 of the semiconductor chip 2 connect the top 22 of the semiconductor chip to a bottom of the semiconductor chip 2.

3 shows a position in the method in which the clamping device 201 with the carrier 1 arranged thereon and the semiconductor chip 2 is immersed in the liquid polymer 30. In this case, the semiconductor chip 2 is so far immersed in the liquid polymer 30 that the upper side 22 comes into contact with the bottom surface in the container 202 and therefore there is no polymer 30 between the bottom surface and the top side 22 . In contrast, the side surfaces 21 of the semiconductor chip 2 are completely covered by the polymer 30 .

In the 4 shows a position in the method in which the liquid polymer 30 is locally irradiated through the bottom of the container 202 with the aid of the projector 203, 204, 205. In the present case, only areas of the polymer 30 that are arranged laterally next to the semiconductor chip 2 and border on the side surfaces 21 are irradiated and thereby cured. The irradiated areas can be adjusted precisely and down to the last pixel by the projector 203, 204, 205. The beam (dashed lines) expands in the direction away from the projector 203,204,205.

In the present exemplary embodiment, the semiconductor chip 2 is thinner than the penetration depth of the radiation from the projector into the polymer 30. That is to say, by the in 4 illustrated irradiation, the entire irradiated polymer 30 between the bottom surface and the carrier 1 is cured.

5 shows a position in the method after the carrier 1 with the semiconductor chip 2 has been pulled out of the polymer 30 again. The hardened areas of the polymer 30 form a housing 3 which runs laterally completely around the semiconductor chip 2 and which bears directly against the side faces 21 of the semiconductor chip 2 . Due to the fact that the semiconductor chip 2 is thinner than the penetration depth of the radiation in the polymer 30, a single irradiation step was sufficient to produce the entire housing 3. The housing 3 is thus formed here by a single layer. In addition, the expanding beam has resulted in the housing 3 having a shape that tapers in the direction away from the carrier 1 .

6 FIG. 1 shows a first exemplary embodiment of the semiconductor component 100, which was produced using the method described above. A top side 32 of the housing 3 facing away from the carrier 1 is flush with the top side 22 of the semiconductor chip 2 . The side surfaces 31 of the housing 3 run obliquely to the carrier 1 or to the tops 22, 32. The edge 33 between the top 32 and the side surface 31 is particularly sharp due to the additive process used, for example it has a radius of curvature of at most 500 nm.

With the method described here, the housing 3 can advantageously be produced very precisely and directly adjacent to the semiconductor chip 2 . The shape of the housing 3 can also be designed very individually and can be provided with customer branding, such as lettering or a logo, for example.

In the 7 a position in a second embodiment of the method is shown. This position is similar to the position of 4 , in which the carrier 1 with the semiconductor chip 2 applied to its upper side is immersed in the bath of the liquid polymer 30 . Again, the top 22 of the semiconductor chip 2 is placed directly on the bottom surface, so that the top 22 remains free of the liquid polymer 30 . With the projector 203, 204, 205, different areas of the polymer 30 are irradiated laterally around the semiconductor chip 1 and cured.

8th shows a position after it has been pulled out of the polymer 30. The irradiation has produced a frame-like housing 3 around the semiconductor chip 2, which is directly adjacent to the side surfaces 21 of the semiconductor chip 2. In addition, the polymer 30 has been irradiated in such a way that a recess 34, for example a hole, has been created in the housing 3. A connection area 10 of the carrier 1 is exposed in the area of the recess 34 . The connection area 10 is, for example, a metallic area on the upper side of the carrier 1.

9 shows a further position in the method and at the same time an embodiment of the semiconductor device 100. An electrical connection 5 between the semiconductor chip 2 and the connection area 10 was established. The electrical connection 5 extends here from the top 22 of the semiconductor chip 2, for example from a contact point on the top 22, over a top of the housing 3 into the recess 34 and up to the connection area 10. The electrical connection 5 is for For example, a deposited metal layer that conformally reshapes the housing 3 on its upper side over the edge into the area of the recess 34 . The electrical connection 5 was produced, for example, by sputtering on a seed layer, lithographically patterning the seed layer, galvanically growing the metal layer and etching back the seed layer.

10 shows a position in a third embodiment of the method. The semiconductor chip 2 is again immersed in the liquid polymer 30 together with the carrier 1 . In the present case, however, a gap is left free between the top side 22 of the semiconductor chip 2 and the bottom surface, so that the top side 22 of the semiconductor chip 2 is covered by the liquid polymer 30 . A contact point on the upper side 22 of the semiconductor chip 2 is electrically conductively connected to a connection area of the carrier 1 via a contact wire 6 . The connection area is located laterally next to the semiconductor chip 2 on the upper side of the carrier 1.

The projector 203, 204, 205 is used to irradiate areas of the polymer 30 laterally next to the semiconductor chip 2 and at a distance from the semiconductor chip 2. The connection area for the contact wire 6 is not irradiated and lies between the irradiated areas of the polymer 30 and the semiconductor chip 2.

11 shows a position after the carrier 1 with the semiconductor chip 2 has been pulled out of the polymer 30. The irradiation has produced a housing 3 which runs laterally completely around the semiconductor chip 2. The housing 3 is thicker than the semiconductor chip 2, so protrudes beyond the semiconductor chip 2 or its upper side 22 in the direction away from the carrier 1. This was achieved in that the semiconductor chip 1 in 10 spaced from the bottom of the container 202.

In the present case, the thickness of the housing 3 is selected such that the contact wire 6 does not protrude beyond the housing 3 in the direction of the carrier. In this way, the contact wire 6 can be protected from mechanical influences.

In the 12 a further position in the method is shown, in which the cavity formed by the housing 3, in which the semiconductor chip 2 is arranged, is filled with a conversion material. For example, the cavity is filled with a liquid conversion material, so that the top 22 and the side faces 21 of the semiconductor chip 2 are completely covered by the conversion material. The conversion material can then be cured to form a conversion element. A dispensing method or a jetting method can be used for the filling.

13 shows an alternative to 12 . Here the carrier 1 with the semiconductor chip arranged thereon and the housing 3 is immersed in a further liquid polymer 40, the further liquid polymer 40 being or containing a conversion material which can be cured under irradiation, for example UV radiation or visible light . By immersing in the polymer 40, the cavity formed by the housing 3 is filled with the liquid polymer 40 and the semiconductor chip 2 is covered by the polymer 40 both on its upper side 22 and on its side surfaces 21.

The entire area of the cavity formed by the housing 3 is then irradiated with the aid of the projector 203, 204, 205 and the polymer 40 located there is thereby cured to form a conversion element. Here, in contrast to 12 the conversion element is also produced additively.

14 FIG. 1 shows an exemplary embodiment of the finished optoelectronic semiconductor component 100, as can be produced according to the two variants described above. The conversion element 4 is arranged on and next to the semiconductor chip 2 in the region of the cavity. The primary radiation generated by the semiconductor chip 2 during operation is converted into radiation of a longer wavelength by the conversion element.

15 shows a position in a fifth embodiment of the method. Here, the container 202 forms a shaping structure 202 with a recess 60, which at least partially specifies a shape of a molded body to be created. The recess 60 is filled with a liquid polymer 40 which is or has a conversion material for the primary radiation generated by the semiconductor chip 2 . The polymer 40 arranged around the semiconductor chip 2 can be cured to form a conversion element 4 by irradiating the polymer 40 within the recess 60 . The shape of the resulting conversion element 4 is determined by the shape of the recess 60 .

In the 16 a further position is shown, in which the carrier 1 with the semiconductor chip 2 and the resulting conversion element 4 is introduced into the recess 60 of a further shaping structure 202, the recess 60 being filled with a polymer 30 which can be cured by radiation. The entire recess 60 is irradiated again, so that the polymer 30 hardens and forms a housing 3 running laterally around the semiconductor chip 2 . The shape of the housing 3 is determined by the shape of the recess 60 .

The formative structures in the 15 and 16 can be realized through the container 202 itself by Vet foils or small glass plates, which are inserted into the container 202.

17 shows the resulting semiconductor component 100 with conversion element 4 lying directly on the semiconductor chip 2, produced by the additive method described, and housing 3 running laterally around the semiconductor chip 2, produced by the additive method described.

In the 15 until 17 a semiconductor chip 2 was used, which is designed as a surface-mountable semiconductor chip 2, ie has its contact points provided for the electrical contacting on an underside of the semiconductor chip 2 facing the carrier 1.

In the 18 until 20 are the same positions as in the 15 until 17 shown, except that instead of a surface-mountable semiconductor chip 2, a semiconductor chip 2 with a contact point on the upper side 22 is used here, which is connected via a contact wire 6 to a connection area of the carrier 1 arranged next to the semiconductor chip 2.

In the exemplary embodiments described so far, a single irradiation step was always carried out to produce the housing 3 or the conversion element 4, so that the housing 3 or the conversion element 4 was realized as individual layers.

In the 21 until 24 a sixth exemplary embodiment is now shown, in which several irradiation steps are carried out and a multilayer housing 3 is thereby produced additively.

In the 21 a position is shown in which the semiconductor chip 2 is completely immersed in the liquid polymer 30 . The liquid polymer 30 is arranged in a recess 60 of the container 202 . In 21 the semiconductor chip 2 is embedded in the polymer 30 .

In a first irradiation step, different areas of the polymer 30 are now irradiated using the projector 203, 204, 205. In particular, areas next to the semiconductor chip 1 and between the top 22 of the semiconductor chip 2 and the bottom surface are irradiated, so that a first layer of a housing is formed.

In the position of 22 the clamping device 201 is moved a little out of the recess 60 together with the carrier 1, the semiconductor chip 2 and the first layer of the housing that has already formed. A next irradiation step is carried out, in which a second layer of the housing is created.

In the 23 After a few more irradiation steps, the jig 201 is moved further up and a final irradiation step is carried out, in which a final layer of the housing is formed.

24 shows a position after the semiconductor device 100 is completed. The housing 3 is built up in layers and comprises several stages. The housing 3 completely surrounds the semiconductor chip 2 laterally and covers parts of the upper side of the semiconductor chip 2.

The invention is not limited to these by the description based on the exemplary embodiments. Rather, the invention includes every new feature and every combination of features, which in particular includes every combination of features in the patent claims, even if these features or this combination themselves are not explicitly specified in the patent claims or exemplary embodiments.

Reference List

1

carrier

2

semiconductor chip

3

Housing

4

conversion element

5

electrical connection

6

contact wire

10

connection area

21

side faces

22

top

30

polymer

31

side faces

32

top

33

edge

34

recess

40

polymer

60

recess

100

semiconductor device

200

DLP device

201

clamping device

202

container

203

modulator

204

lens

205

radiation source

206

engine

Claims (16)

Method for producing a semiconductor component (100) with the steps: A) providing a carrier (1) with a semiconductor chip (2) arranged thereon, B) producing a shaped body (3, 4) on the carrier (1) laterally next to the semiconductor chip (1), wherein - The shaped body (3, 4) is produced by means of an additive process. procedure after claim 1 , wherein - the shaped body (3, 4) is produced with the aid of a digital light processing device (200). procedure after claim 1 or 2 , wherein - the shaped body (3, 4) is produced directly adjacent to at least one side surface (21) of the semiconductor chip (2). Method according to one of the preceding claims, wherein - the shaped body (3, 4) is produced with a shape that tapers in the direction away from the carrier (1). Method according to one of the preceding claims, wherein - the shaped body (3) is produced with a recess (34) in which a connection area (10) of the carrier (1) is exposed, - After step B), an electrical connection (5) is established between the semiconductor chip (2) and the connection area (10), the electrical connection (5) extending through the recess (34). Method according to one of the preceding claims, wherein in step B) - the semiconductor chip (1) is embedded in a starting material (30, 40), - Then the shaped body (3, 4) is produced by irradiating predetermined areas of the starting material (30, 30). procedure after claim 6 , wherein - the shaped body (3, 4) is produced as a single layer in a single irradiation step. procedure after claim 6 , wherein - the shaped body (3, 4) is produced in layers in several irradiation steps. Procedure according to one of Claims 6 until 8th , wherein in step B) - the semiconductor chip (1) is introduced into a recess (60) of a shaping structure (202), - the recess (60) is partially filled with the starting material (30, 40), - the shaped body (3 , 4) is produced by irradiating the starting material (30) in the region of the recess (60) and the shape of the recess (60) at least partially determines the shape of the shaped body (3, 4). Method according to one of the preceding claims, wherein - The shaped body is a housing (3) for the semiconductor chip (2). A method according to any preceding claim, wherein - the semiconductor chip (1) is an optoelectronic semiconductor chip (1) for generating a primary radiation, - The shaped body is a conversion element (4) for converting the primary radiation. Method according to one of the preceding claims, wherein - in step B) a shaped body in the form of a housing (3) is produced at a lateral distance from the semiconductor chip (1) and by means of an additive method, - in step C) a further shaped body (4). at least one side surface (21) of the semiconductor chip (1) is produced immediately adjacent. procedure after claim 12 , wherein - the further shaped body (4) is produced by means of an additive process. Having a semiconductor component (100). - a semiconductor chip (2), - A shaped body (3, 4) laterally around the semiconductor chip (1), wherein - The shaped body (3, 4) is produced by means of an additive process. Semiconductor component (100) after Claim 14 that with a method according to one of Claims 1 until 13 is made. Semiconductor component (100) according to one of the preceding claims, wherein - the shaped body is a housing (3), - the housing (3) rests directly on side surfaces (21) of the semiconductor chip (2), - the housing (3) has at least one side face (31) facing away from the semiconductor chip (2) and a top side (32), - the top (32) of the housing (3) is flush with a top (22) of the semiconductor chip (2), - An edge (33) between the side surface (31) and the top (32) of the housing (3) has a radius of curvature of at most 500 nm.

Images