DE102022131435A1 - Device for generating a plasma flame, plasma generation device, high-temperature processing plant and corresponding operating method - Google Patents

Abstract

The invention relates to a device (10, 10a, 10b) for generating at least one plasma flame (12), a plasma generation device (100) comprising a plurality of devices (10, 10a, 10b), a high-temperature process plant, in particular a melting plant (26) for melting a material (28) by means of melting heat and a method for operating such a device (10, 10a, 10b), such a plasma generation device (100) or such a high-temperature process plant, in particular a melting plant (26).

Description

The invention relates to a device for generating at least one plasma flame with features of claim 1, a plasma generation device with features of claim 6, a high-temperature process plant, in particular a melting plant, with features of claim 11 and a method for operating such a device, such a plasma generation device or such a high-temperature process plant, in particular a melting plant, with features of claim 13.

High-temperature process plant, in particular melting plant, is understood here to mean a plant that can generate a heat output of at least 100 kW, in particular at least 500 kW, particularly preferably at least 2 MW in a plasma flame. This is particularly interesting for plants that are intended to be able to replace conventional gas burners with a comparable heating output in the course of reducing CO2 emissions.

Plasma torches are well known in the art. They generate an arc from an ionized gas, known as plasma. The plasma can have a temperature of around 30,000 °C. To generate the plasma, it must first be ignited, i.e. the gas must be ionized. In order to maintain the plasma, i.e. to keep the gas in an ionized state, energy (or power) must be continuously fed into the plasma torch.

US 2003/0080097 A1 discloses a plasma torch with two energy sources that inductively supply the plasma torch with energy. The first energy source is used to ignite the plasma in the plasma torch. The second energy source is used to maintain the plasma during operation of the plasma torch.

The disadvantage here is that the power fed into the plasma is not sufficient for a high-temperature process plant, in particular a melting plant, of the type mentioned above.

The object of the following invention is to provide a device for generating at least one plasma flame, a plasma generation device, a high-temperature process plant, in particular a melting plant for melting a material by means of melting heat, and a method for operating such a device, such a plasma generation device or such a high-temperature process plant, in particular a melting plant, wherein the fed-in power is in a range from 100 kilowatts to 100 megawatts.

This object is achieved by a device for generating at least one plasma flame with the features of claim 1. The device can be designed as a plasma burner. The device comprises a process gas supply for supplying a process gas into the device and at least one plasma generation space for generating at least one plasma by ionizing the process gas. The plasma generation space can be designed as a plasma generation chamber. The device is set up in such a way that the plasma generates the plasma flame when it leaves the device.

The device comprises a first power supply for supplying the device with power.

In this disclosure, energy supply generally means an electrical energy supply. It usually has a power converter device that is designed to convert the power supplied to it, in particular the electrical power supplied to it by a power supply network, into electrical power suitable for the process to be supplied and to make it available for supply. An energy supply in the sense of this disclosure can have further components in order to be able to make the electrical power supplied available to the process as suitably as possible.

The first energy supply is designed to inductively feed energy into the plasma generation chamber. The first energy supply comprises at least one first power supply unit.

In this disclosure, a power supply unit generally means an electrical power supply unit. It usually has a power converter device as already mentioned above, which is designed to convert the power supplied to it, in particular the electrical power supplied to it by a power supply network, into electrical power suitable for the process to be supplied and to make it available for supply. A power supply unit in the sense of this disclosure can have further components, e.g. a controller, filters, shields and/or components for preventing personal injury due to heat, radiation or electrical current.

The first power supply unit is designed to generate an alternating current and/or voltage within a first frequency range The first frequency range is in a range from 1 kilohertz (kHz) to 10 megahertz (MHz). The first frequency range can preferably be in a range from 10 kHz to 1 MHz, particularly preferably in a range from 10 kHz to 600 kHz.

The device comprises a second energy supply for supplying the device with energy. The second energy supply is designed for inductively feeding energy into the plasma generation chamber. The second energy supply comprises a second power supply unit. The second power supply unit is designed to generate an alternating current and/or voltage within a second frequency range. The second frequency range is in a range from 1 MHz to 500 gigahertz (GHz). The second frequency range can preferably be in a range from 1 MHz to 10 GHz.

The second power supply unit can be designed to operate at a frequency that is higher than the frequency of the first power supply unit, in particular at least a factor of 10 higher.

A power inductively fed into the plasma generation chamber by means of the first energy supply and by means of the second energy supply lies in a range from 100 kilowatts to 100 megawatts. The power inductively fed into the plasma generation chamber by means of the first and second energy supplies can lie in a range from 100 kilowatts to 10 megawatts, in particular in a range from 100 kilowatts to 1 megawatt.

The device can comprise a plurality of first and a plurality of second power supply units. The first power supply unit can be designed as a current and/or voltage source. The second power supply unit can also be designed as a current and/or voltage source.

This makes it possible to provide a device for generating a plasma flame with a very high input power.

According to a further development, the first energy supply can comprise at least one induction coil for inductively feeding energy into the plasma generation chamber. The second energy supply can be set up in such a way that the energy generated by the second energy supply can be fed at least partially, in particular completely, into the plasma generation chamber by means of the induction coil of the first energy supply. The first energy supply can comprise several induction coils for inductively feeding energy into the plasma generation chamber. This means that a separate induction coil for the second energy supply can be dispensed with. This means that components of the device can be saved and the complexity of the device can be reduced.

According to a further development, the first energy supply can comprise at least one induction coil for inductively feeding energy into the plasma generation chamber. The second energy supply can comprise at least one further induction coil for inductively feeding energy into the plasma generation chamber. The first energy supply can comprise several induction coils and the second energy supply can comprise several further induction coils for inductively feeding energy into the plasma generation chamber. The energy supply of the first and second energy supplies can thus be implemented via separate induction coils. This enables a safe and stable energy supply via the respective induction coil to be implemented without any potentially disruptive interference effects.

According to a further development, the device can comprise at least one magnet for generating magnetic inhomogeneities within the plasma generation space. The magnet can be arranged around the plasma generation space. The magnet can be arranged between the process gas supply and the induction coil of the first energy supply or the further induction coil of the second energy supply. The device can comprise several magnets for generating magnetic inhomogeneities within the plasma generation space. This can energetically promote the inductive feed of energy into the plasma generation space. In particular, the ignition and/or re-ignition of plasma can be energetically promoted. In other words, the energy required to ignite and/or re-ignite the plasma can be reduced by means of the magnetic inhomogeneities. It is also conceivable that the energy or power required to operate the device can be reduced due to the magnetic inhomogeneities.

In this case, magnetic inhomogeneity means a bundling of the magnetic field or a generation of local magnetic field maxima or minima (uneven course of magnetic field lines).

In this case, “ignition” means the initial ignition of a “cold plasma” or the initial ionization of a gas to be ionized. Accordingly, "re-ignition" means the renewed ignition of a "preheated plasma". In other words, during re-ignition, a previously ignited plasma is re-ignited or a previously ionized gas is re-ionized. The power required for re-ignition is lower than the power required to ignite the plasma for the first time.

According to a further development, the device can have at least one nozzle for discharging the plasma from the device. The nozzle can be designed to shape and align the plasma flame, which is generated by the plasma discharged from the device, in a radiation direction. The nozzle can be designed in such a way that the radiation direction in which the plasma flame is directed can be varied or adjusted by means of the nozzle. The nozzle can be designed to be movable for this purpose. This allows the radiation direction of the plasma flame and thus the direction of the heat emitted by the plasma flame to be controlled in a targeted manner.

The above object is further achieved by a plasma generation device with the features of claim 6. The plasma generation device comprises several devices according to the above statements. The plasma generation chambers of the several devices are arranged in an array. The plasma flames of the several devices can generate a common plasma flame. As a result, the heat development in the respective plasma generation chambers and/or the respective induction coils can be divided among several. In other words, the heat development in the respective individual plasma generation chambers and/or the respective induction coils can be reduced. With regard to the further advantages that can be achieved with this, reference is made to the relevant statements on the device. The measures described in connection with the device and/or those explained below can be used to further configure the plasma generation device.

According to a further development, the plasma generation chambers can be arranged in a honeycomb structure. For example, a first plasma generation chamber can be arranged in the middle and six further plasma generation chambers can be arranged around the first plasma generation chamber (analogous to a honeycomb). This makes it possible to implement a particularly stable structure or a particularly stable array of plasma generation chambers and to align the individual plasma flames in a targeted manner.

According to a further development, the plasma generation chambers can be arranged in such a way that the plasma flames create a cyclone. In this way, particles can be transported away from the plasma flames due to centrifugal force. In addition, the plasma flames can be directed in a targeted manner. This can be achieved by arranging the plasma generation chambers. Alternatively or additionally, additional electrical and/or magnetic fields can be used to create a cyclone from the plasma flames and/or to direct the plasma flames in a targeted manner.

According to a further development, the induction coils and/or the further induction coils of at least two, in particular all, devices can be electrically and/or magnetically coupled to one another. This makes it possible to provide a particularly stable and flexible overall system or a particularly stable and flexibly usable plasma generation device.

According to a further development, the devices can be coupled to one another in such a way that a loss of power in one device can be compensated by an increase in power in at least one other device. This can ensure particularly stable operation of the plasma generation device.

The above object is further achieved by a high-temperature process plant, in particular a melting plant for melting a material by means of melting heat, with the features of claim 11. The high-temperature process plant, in particular a melting plant, can be set up for melting glass, semiconductor material or a metal, in particular for melting aluminum. The high-temperature process plant can also be used for burning cement. The high-temperature process plant, in particular a melting plant, comprises at least one device according to the above statements or a plasma generation device according to the above statements. The high-temperature process plant, in particular a melting plant, is set up in such a way that the heat, in particular a melting heat, is generated at least partially, in particular completely, by means of the device or the plasma generation device. The device and/or the plasma generation device can thus be used as a heat source for the high-temperature process plant, in particular a melting plant, and the high-temperature process plant, in particular a melting plant, can be operated efficiently. With regard to the further advantages that can be achieved with this, reference is made to the relevant statements on the device or the plasma generation device. For further design of the high-temperature process plant, in particular a melting plant, the Plasma generation device described and/or the measures explained below.

According to a further development, the high-temperature process plant can comprise a combustion chamber, in particular the melting plant can comprise a melting chamber. The material to be processed or melted can be arranged in the combustion chamber, in particular the melting chamber. The material to be melted can be glass, metal, in particular aluminum. The material to be processed can also be cement, for example. The high-temperature process plant, in particular the melting plant, can be designed in such a way that the plasma flame or plasma flames generated by means of the device or by means of the plasma generation device can be introduced at least partially, in particular completely, into the combustion chamber, in particular the melting chamber. As a result, the combustion chamber, in particular the melting chamber of the high-temperature process plant, in particular the melting plant, can be efficiently heated by means of the device or by means of the plasma flame(s) generated by the device(s).

The high-temperature process plant, in particular the melting plant, can comprise a gas discharge for discharging exhaust gases, in particular from the combustion chamber, in particular the melting chamber. This allows the exhaust gases generated during operation of the high-temperature process plant, in particular the melting plant, to be safely discharged. The gas discharge can comprise an exhaust hood. This allows the exhaust gases generated during operation of the high-temperature process plant, in particular the melting plant, to be efficiently collected, fed to the gas discharge and discharged from the high-temperature process plant, in particular the melting plant, in particular from the combustion chamber or melting chamber.

• Bereitstellen der Vorrichtung, der Plasmaerzeugungseinrichtung oder der Hochtemperaturprozessanlage, insbesondere Schmelzanlage.

The above object is further achieved by a method for operating a device according to the above statements, a plasma generation device according to the above statements or a high-temperature process plant, in particular a melting plant, according to the above statements with the features of claim 13. The method comprises the steps:

• Providing the device, the plasma generation device or the high-temperature processing plant, in particular the melting plant.

Generating the plasma flame or flames by means of the device or devices.

To generate the plasma flame or flames, the first and second power supplies supply energy to the respective device.

Operating the device, the plasma generation device or the high-temperature processing plant, in particular the melting plant.

1. i) mittels der ersten Energieversorgung oder
2. ii) mittels der ersten und der zweiten Energieversorgung mit Energie versorgt.

During operation of the device, the plasma generation device or the high-temperature processing plant, in particular the melting plant, the respective device

1. (i) by means of the first energy supply or
2. ii) supplied with energy by means of the first and second energy supplies.

With regard to the advantages that can be achieved, reference is made to the relevant statements on the device, the plasma generation device or the high-temperature process plant, in particular the melting plant. The measures described in connection with the device, the plasma generation device or the high-temperature process plant, in particular the melting plant, and/or those explained below can be used to further develop the method.

According to a further development, the respective first and/or second power supply unit can be operated continuously. In other words, the respective first and/or second power supply unit can be operated in cw operation (continuous wave operation). This enables particularly stable operation, in particular of the respective power supply unit, to be implemented.

According to a further development, the respective first and/or second power supply unit can be operated in a pulsed manner. This enables particularly efficient operation, in particular of the respective second power supply unit, to be implemented.

According to a further development, the pulses or pulse packets generated by means of the pulsed operation of the respective first and/or second power supply unit can correspond to zero crossings of the alternating current intensity and/or voltage of the respective other power supply unit. This allows the operation of the respective device to be designed to be particularly efficient.

In the present case, a zero crossing is the point in time at which the alternating current and/or voltage of the respective other power supply unit has an amplitude value close to zero, in particular zero. In other words, at a zero crossing, the current and/or the voltage of the respective other power supply unit has the value zero (or a value close to zero). This means that the power fed in at the zero crossing (or at the time of the zero crossing) is also minimal (or can also be zero). The pulsed power fed in by the respective pulsed first or second power supply unit can compensate for the power drop at the zero crossing of the respective other power supply unit. This can prevent the plasma from going out at the zero crossing of the respective other power supply unit. In other words, this can maintain the plasma even at the zero crossing (at the time of the zero crossing) of the respective first or second power supply unit.

• Variieren der mittels der jeweiligen ersten und der zweiten Energieversorgung eingespeisten Leistung durch ein Einstellen der mittels der jeweiligen zweiten Leistungsversorgungseinheit erzeugten Stromstärke und/oder Spannung. Hierdurch kann die eingespeiste (Gesamt-)Leistung mittels der jeweiligen zweiten Leistungsversorgungseinheit gesteuert und eingestellt werden. Auf ein separates Einstellen der eingespeisten Leistung der ersten Energieversorgung und den damit zusammenhängenden Bauteilen kann verzichtet werden. Hierdurch kann die Komplexität der jeweiligen Vorrichtung reduziert werden.

According to a further development, the method may include the step:

• Varying the power fed in by means of the respective first and second energy supplies by adjusting the current and/or voltage generated by the respective second power supply unit. This allows the (total) power fed in to be controlled and adjusted by means of the respective second power supply unit. There is no need to separately adjust the power fed in by the first energy supply and the associated components. This allows the complexity of the respective device to be reduced.

• Variieren der mittels der jeweiligen ersten Energieversorgung eingespeisten Leistung durch ein Einstellen der mittels der jeweiligen zweiten Leistungsversorgungseinheit erzeugten Stromstärke und/oder Spannung. Durch ein Einstellen der mittels der jeweiligen zweiten Leistungsversorgungseinheit erzeugten Stromstärke und/oder Spannung kann eine Einkoppelimpendanz der jeweiligen ersten Energieversorgung variiert werden. Hierdurch kann das Einspeisen der Leistung mittels der ersten Energieversorgung gesteuert und gezielt eingestellt werden.

According to a further development, the method may include the step:

• Varying the power fed in by means of the respective first energy supply by adjusting the current and/or voltage generated by means of the respective second power supply unit. By adjusting the current and/or voltage generated by means of the respective second power supply unit, a coupling impedance of the respective first energy supply can be varied. In this way, the feeding in of the power by means of the first energy supply can be controlled and specifically adjusted.

• Betreiben mehrerer Vorrichtungen.

According to a further development, the procedure may include the following steps:

• Operating multiple devices.

Adjusting the power fed into the respective device by varying a frequency, a frequency amplitude and/or a frequency phase of the current and/or voltage of a device generated by the first and/or the second power supply unit compared to a frequency, a frequency amplitude and/or a frequency phase of the current and/or voltage generated by the first and/or the second power supply unit of at least one other device. In other words, the difference between the frequency, the frequency amplitude and/or the frequency phase of the first and/or the second power supply unit of at least two devices can be adjusted or varied.

This allows the power fed into several devices to be adjusted flexibly and in a targeted manner.

• Betreiben mehrerer Vorrichtungen.

According to a further development, the procedure may include the following steps:

• Operating multiple devices.

Compensating for a loss in performance of one device by increasing the performance of at least one other device.

This enables particularly stable operation of the multiple devices to be achieved.

• Betreiben mehrerer Vorrichtungen.

According to a further development, the procedure may include the following steps:

• Operating multiple devices.

Feeding the same power into each device.

This makes it possible to achieve the most stable operation possible for several devices using simple means.

• Betreiben mehrerer Vorrichtungen.

According to a further development, the procedure may include the following steps:

• Operating multiple devices.

Feeding a different power into at least two, in particular into all, devices in order to create a power difference between the respective devices and thus a power profile, in particular an asymmetrical one. By deliberately detuning the power fed into the respective devices, for example, a targeted, unevenly distributed power profile can be generated across the devices. This can be useful, for example, to supply the plasma flame(s) inside (in the core of the plasma flame(s)) with more or less power than in the outer area (outer radius) of the plasma flame(s). Any other targeted asymmetry of the power profile is also conceivable.

• Zeitliches Variieren des Leistungsprofils.

According to a further development, the method may include the step:

• Varying the performance profile over time.

This allows the performance profile or the asymmetry of the performance profile to be adapted to the circumstances over time. This allows the process to be used more flexibly.

• Betreiben der Vorrichtung, der Plasmaerzeugungseinrichtung oder der Hochtemperaturprozessanlage, insbesondere Schmelzanlage.

According to a further development, the procedure may include the following steps:

• Operating the device, the plasma generation device or the high-temperature processing plant, in particular the melting plant.

Aligning the respective plasma flame in the radiation direction.

Varying the direction of radiation in which the respective plasma flame is directed during operation of the device, the plasma generation device or the high-temperature process plant, in particular the melting plant. This enables a (permanent) directional sweep of the plasma flame(s) to be implemented. This allows the plasma flame(s) to "brush" evenly over a surface of the material to be melted (or the melt) in a targeted manner, for example to avoid local hotspots and to heat the material to be melted more evenly.

• 1 eine schematische Darstellung einer Hochtemperaturprozessanlage, insbesondere Schmelzanlage, mit einer Vorrichtung zur Erzeugung einer Plasmaflamme gemäß einem ersten Ausführungsbeispiel;
• 2 eine schematische Darstellung der Hochtemperaturprozessanlage, insbesondere Schmelzanlage, mit der Vorrichtung zur Erzeugung der Plasmaflamme gemäß einem zweiten Ausführungsbeispiel;
• 3 eine schematische Darstellung der Hochtemperaturprozessanlage, insbesondere Schmelzanlage, mit einer Plasmaerzeugungseinrichtung und
• 4 verschiedene Beispiele von alternierender Spannungsstärke einer ersten bzw. zweiten Leistungsversorgungseinheit.

Further features, details and advantages of the invention emerge from the wording of the claims and from the following description of embodiments with reference to the drawings. They show:

• 1 a schematic representation of a high-temperature process plant, in particular a melting plant, with a device for generating a plasma flame according to a first embodiment;
• 2 a schematic representation of the high-temperature process plant, in particular melting plant, with the device for generating the plasma flame according to a second embodiment;
• 3 a schematic representation of the high-temperature process plant, in particular melting plant, with a plasma generation device and
• 4 various examples of alternating voltage levels of a first and second power supply unit.

In the following description and in the figures, corresponding components and elements have the same reference symbols.

1 shows a schematic representation of a high-temperature process plant, in particular a melting plant 26 with a device 10 for generating at least one plasma flame 12 according to a first embodiment. The device 10 is in the form of a plasma burner.

The device 10 comprises a process gas supply 14 for supplying a process gas into the device 10 and a plasma generation chamber 16 for generating a plasma 11 by ionizing the process gas. The plasma generation chamber 16 is in the form of a plasma generation chamber. The device 10 is set up in such a way that the plasma 11 generates the plasma flame 12 when it leaves the device 10.

The device 10 further comprises a first energy supply 18 for supplying the device 10 with energy. The first energy supply 18 is designed for inductively feeding energy into the plasma generation chamber 16. The first energy supply 18 comprises a first power supply unit 20. The first power supply unit 20 is designed as a current and/or voltage source. The first power supply unit 20 is set up to generate an alternating current and/or voltage within a first frequency range. The first frequency range is in a range from 1 kHz to 10 MHz. The first frequency range can preferably be in a range from 10 kHz to 1 MHz, particularly preferably in a range from 10 kHz to 600 kHz.

The device 10 further comprises a second energy supply 22 for supplying the device 10 with energy. The second energy supply 22 is designed for inductively feeding energy into the plasma generation chamber 16. The second energy supply 22 comprises a second power supply unit 24. The second power supply unit 24 is designed here as a current and/or voltage source. The second power supply unit 24 is set up to generate an alternating current and/or voltage within a second frequency range. The second frequency range is in a range from 1 MHz to 500 GHz. The second frequency range can be in a range from 1 MHz to 10 GHz.

The power fed inductively into the plasma generation chamber 16 by means of the first and second energy supply 18, 22 is in a range from 100 kilowatts to 100 megawatts. The fed-in power can be in a range from 100 kilowatts to 10 megawatts. Likewise It is conceivable that the power fed in could be in a range from 100 kilowatts to 1 megawatt.

The first energy supply 18 has an induction coil 23 for inductively feeding energy into the plasma generation chamber 16. The second energy supply 22 is set up in such a way that the energy generated by the second energy supply 22 can be fed entirely into the plasma generation chamber 16 by means of the induction coil 23 of the first energy supply 18.

In the present case, the device 10 comprises a magnet 27 for generating magnetic inhomogeneities within the plasma generation chamber 16. The magnet 27 is arranged around the plasma generation chamber 16. By means of the magnetic inhomogeneities generated, the energy or power required for ignition and/or re-ignition can be reduced. It is also conceivable that the energy or power required to operate the device 10 can be reduced due to the magnetic inhomogeneities generated by means of the magnet 27.

The device 10 comprises a nozzle 31 for discharging the plasma 11 from the device 10. The plasma flame 12 can be shaped and aligned by means of the nozzle 31. The plasma flame 12 can be aligned in a radiation direction 36 by means of the nozzle 31. The nozzle 31 can be set up in such a way that the radiation direction 36 of the plasma flame 12 can be varied or adjusted by means of the nozzle 31. For this purpose, the nozzle 31 can be designed to be movable.

The high-temperature process plant, in particular melting plant 26, is designed to process, in particular burn or melt a material 28 by means of heat or melting heat. The heat or melting heat is generated in the present case by means of the device 10. The high-temperature process plant, in particular melting plant 26, has a combustion chamber, in particular melting chamber 30, in which the material 28 to be burned or melted is arranged. The plasma flame 12 generated by means of the device 10 is introduced into the combustion chamber, in particular melting chamber 30. The combustion chamber, in particular melting chamber 30, can thus be heated by means of the plasma flame 12 generated by the device 10. In other words, the plasma flame 12 serves as a heat source for the combustion chamber, in particular melting chamber 30 of the high-temperature process plant, in particular melting plant 26.

The high-temperature process plant, in particular melting plant 26, in the present case comprises a gas discharge 35 for discharging exhaust gases from the combustion chamber, in particular melting chamber 30. The gas discharge 35 comprises an exhaust hood 37. The exhaust gases generated during operation of the high-temperature process plant, in particular melting plant 26, can thus be collected by means of the exhaust hood 37, fed to the gas discharge 35 and discharged from the combustion chamber, in particular melting chamber 30, by means of the gas discharge 35.

• Die erste Energieversorgung 18 umfasst vorliegend eine Induktionsspule 23 zur induktiven Einspeisung von Energie in den Plasmaerzeugungsraum 16. Die zweite Energieversorgung 22 umfasst eine weitere Induktionsspule 25 zur induktiven Einspeisung von Energie in den Plasmaerzeugungsraum 16. Mit anderen Worten, die jeweils mittels der ersten und der zweiten Energieversorgung 18, 22 erzeugte Energie wird jeweils über die Induktionsspule 23 und die weitere Induktionsspule 25 in den Plasmaerzeugungsraum 16 eingespeist. Die Induktionsspule 23 und die weitere Induktionsspule 25 sind vorliegend separat ausgebildet und insbesondere beabstandet zueinander angeordnet.

2 shows a schematic representation of the high-temperature process plant, in particular melting plant 26, with the device 10 for generating the plasma flame 12 according to a second embodiment. The second embodiment differs from the first embodiment in the following:

• The first energy supply 18 comprises an induction coil 23 for inductively feeding energy into the plasma generation chamber 16. The second energy supply 22 comprises a further induction coil 25 for inductively feeding energy into the plasma generation chamber 16. In other words, the energy generated by the first and second energy supplies 18, 22 is fed into the plasma generation chamber 16 via the induction coil 23 and the further induction coil 25. The induction coil 23 and the further induction coil 25 are designed separately and are arranged at a distance from one another.

3 shows a schematic representation of the high-temperature process plant, in particular melting plant 26, with a plasma generation device 100. The plasma generation device 100 comprises a first device 10a and a second device 10b. The first device 10a and the second device 10b are each analogous (in particular identical) to the device 10 according to the in 1 shown (first) embodiment.

The two devices 10a, 10b are arranged in such a way that their plasma generation spaces 16 are arranged in an array. Due to the arrangement of the two devices 10a, 10b or their plasma generation spaces 16, the plasma flames 12 of the two devices 10a, 10b generate a common plasma flame 29.

The two devices 10a, 10b or their plasma generation spaces 16 are arranged in such a way that the plasma flames 12 (or the common plasma flame 29) create a cyclone.

The two devices 10a, 10b of the plasma generation device 100 are coupled to one another in such a way that a loss of power at the first device 10a can be compensated by an increase in power at the second device 10b, and vice versa.

For this purpose, the induction coils 23 of the two devices 10a, 10b are electrically and magnetically coupled to one another.

The melting heat of the high-temperature process plant, in particular melting plant 26, is generated in the present case by means of the plasma generation device 100. The plasma flames 12 (or the common plasma flame 29) generated by means of the plasma generation device 100 or the two devices 10a, 10b are introduced into the combustion chamber, in particular melting chamber 30, of the high-temperature process plant, in particular melting plant 26. The combustion chamber, in particular melting chamber 30, can thus be heated by means of the plasma flames 12 (or the common plasma flame 29) generated by the plasma generation device 100 or the two devices 10a, 10b. In other words, the plasma flames 12 (or the common plasma flame 29) serve as a heat source for the combustion chamber, in particular melting chamber 30, of the high-temperature process plant, in particular melting plant 26.

It is conceivable that the plasma generation device 100 has a plurality of devices 10, 10a, 10b, whose plasma generation spaces 16 can be arranged in a honeycomb structure.

• Zunächst wird die Vorrichtung 10, 10a, 10b, die Plasmaerzeugungseinrichtung 100 bzw. die Hochtemperaturprozessanlage, insbesondere Schmelzanlage 26, bereitgestellt. Mittels der Vorrichtung(en) 10, 10a, 10b wird eine Plasmaflamme 12, 29 erzeugt.

In the following, a method for operating the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular the melting plant 26, is described:

• First, the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular melting plant 26, is provided. A plasma flame 12, 29 is generated by means of the device(s) 10, 10a, 10b.

To generate the plasma flame(s) 12, 29, the first and second energy supplies 18, 22 supply the respective device 10, 10a, 10b with energy.

Next, the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular melting plant 26, are operated. During operation of the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular melting plant 26, the respective device 10, 10a, 10b is supplied with energy by means of the first energy supply 18. Alternatively, during operation of the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular melting plant 26, the respective device 10, 10a, 10b can be supplied with energy by means of the first and second energy supplies 18, 22.

The respective power fed in by means of the first and second energy supplies 18, 22 can be varied in the present case by adjusting the current intensity and/or voltage generated by means of the respective second power supply unit 24.

In addition, the power fed in by means of the respective first energy supply 18 can be varied by adjusting the current and/or voltage generated by means of the respective second power supply unit 24. In this case, a coupling impedance of the respective first energy supply 18 can be varied by adjusting the current and/or voltage generated by means of the respective second power supply unit 24.

In the method, several devices 10, 10a, 10b can be operated. The power fed into the respective device 10, 10a, 10b can be adjusted by varying a frequency, a frequency amplitude and/or a frequency phase of the current and/or voltage of a device 10, 10a, 10b generated by the first and/or second power supply unit 20, 24 compared to a frequency, a frequency amplitude and/or a frequency phase of the current and/or voltage of at least one other device 10, 10a, 10b generated by the first and/or second power supply unit 20, 24. In other words, the difference between the frequency, the frequency amplitude and/or the frequency phase of the first and/or second power supply unit 20, 24 of at least two devices 10, 10a, 10b can be adjusted or varied.

When operating multiple devices 10, 10a, 10b, a loss of power in one device 10, 10a, 10b can be compensated by an increase in power in at least one other device 10, 10a, 10b.

When operating several devices 10, 10a, 10b, the same power can be fed into at least two, in particular into all, devices 10, 10a, 10b. It is also possible It is conceivable that different powers can be fed into at least two, in particular into all, devices 10, 10a, 10b. This allows a desired power profile to be generated across the devices 10, 10a, 10b. The power profile can be varied over time.

During operation of the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular the melting plant 26, the respective plasma flame 12, 29 can be aligned in the radiation direction 36. The radiation direction 36 can also be varied (over time) during operation of the device 10, 10a, 10b, the plasma generation device 100 or the high-temperature process plant, in particular the melting plant 26.

The respective second power supply unit 24 can be operated continuously. It is also conceivable that the respective second power supply unit 24 can be operated in a pulsed manner.

The pulses 32 or pulse packets 34 generated by means of the pulsed operation of the respective second power supply unit 24 can correspond to zero crossings 38 of the alternating current and/or voltage of the respective first power supply unit 20. 4 shows various examples of alternating voltage of the first and second power supply units 20, 24.

In 4 Examples of alternating voltage are shown. The voltage or its strength U is plotted on the y-axis (ordinate) over time t on the x-axis (abscissa).

In 4 above, an alternating voltage 33 is shown, which is generated by means of the first power supply unit 20. Pulses 32 or pulse packets 34 of the second power supply unit 24 operated in pulsed mode are also shown. The pulses 32 or the pulse packets 34 of the second power supply unit 24 correspond to the zero crossings 38 of the alternating voltage 33 of the first power supply unit 20. In other words, the pulses 32 or the pulse packets 34 of the second power supply unit 24 are generated when the voltage 33 is close to the zero crossing 38 or is approximately zero.

The pulses 32 can be rectangular pulses, as in 4 above or in 4 shown at the bottom right. A single pulse 32 may also consist of an alternating section of a voltage 40 generated by the second power supply unit 24, as in 4 Middle and in 4 shown below left.

A pulse packet 34 may comprise several individual pulses 32 (see 4 below), where each of these individual pulses 32 can be generated, for example, as a rectangular pulse (see 4 bottom right) or an alternating section (see 4 bottom left) of a voltage 40 generated by the second power supply unit 24.

The representation of the pulses for the respective power supply units 20, 24 is selected as an example. The other or both power supply units 20, 24 can also be operated in a pulsed manner, each with different synchronized or asynchronous pulse times or pulse packet times.

QUOTES INCLUDED IN THE DESCRIPTION

This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions.

Cited patent literature

• US 2003/0080097 A1 [0004]

Claims (24)

Device (10, 10a, 10b) for generating at least one plasma flame (12), in particular a plasma burner, comprising: - at least one process gas supply (14) for supplying a process gas into the device (10, 10a, 10b), - at least one plasma generation space (16), in particular a plasma generation chamber, for generating at least one plasma (11) by ionizing the process gas, wherein the device (10, 10a, 10b) is set up in such a way that the plasma (11) generates the plasma flame (12) when it leaves the device (10, 10a, 10b), - a first energy supply (18) for supplying the device (10, 10a, 10b) with energy, wherein the first energy supply (18) is designed for inductively feeding energy into the plasma generation space (16), wherein the first energy supply (18) has at least one first power supply unit (20) comprises, wherein the first power supply unit (20) is designed to generate an alternating current and/or voltage within a first frequency range, wherein the first frequency range is in a range from 1 kilohertz to 10 megahertz, in particular in a range from 10 kilohertz to 1 megahertz, - a second energy supply (22) for supplying the device (10, 10a, 10b) with energy, wherein the second energy supply (22) is designed to inductively feed energy into the plasma generation chamber (16), wherein the second energy supply (22) comprises a second power supply unit (24), wherein the second power supply unit (24) is designed to generate an alternating current and/or voltage within a second frequency range, wherein the second frequency range is in a range from 1 megahertz to 500 gigahertz, in particular in a range from 1 megahertz to 10 gigahertz, - wherein a voltage generated by means of the first energy supply (18) and by means of the the power inductively fed into the plasma generation chamber (16) by the second energy supply (22) is in a range from 100 kilowatts to 100 megawatts, in particular in a range from 100 kilowatts to 10 megawatts, in particular in a range from 100 kilowatts to 1 megawatt. Device according to Claim 1 , characterized in that the first energy supply (18) comprises at least one induction coil (23) for inductively feeding energy into the plasma generation chamber (16), wherein the second energy supply (22) is set up such that the energy generated by means of the second energy supply (22) can be fed at least partially, in particular completely, into the plasma generation chamber (16) by means of the induction coil (23) of the first energy supply (18). Device (10, 10a, 10b) according to Claim 1 , characterized in that the first energy supply (18) comprises at least one induction coil (23) for inductively feeding energy into the plasma generation chamber (16), wherein the second energy supply (22) comprises at least one further induction coil (25) for inductively feeding energy into the plasma generation chamber (16). Device (10, 10a, 10b) according to one of the preceding claims, characterized in that the device (10, 10a, 10b) comprises at least one magnet (27) for generating magnetic inhomogeneities within the plasma generation space (16), wherein the magnet (27) is arranged around the plasma generation space (16). Device (10, 10a, 10b) according to one of the preceding claims, characterized in that the device (10, 10a, 10b) has at least one nozzle (31) for discharging the plasma (11) from the device (10, 10a, 10b), and in particular for shaping and aligning the plasma flame (12) in a radiation direction (36), in particular wherein the nozzle (31) is designed such that the radiation direction (36) in which the plasma flame (12) is aligned can be varied by means of the nozzle (31). Plasma generation device (100) comprising a plurality of devices (10, 10a, 10b) according to one of the preceding claims, wherein the plasma generation spaces (16) of the plurality of devices (10, 10a, 10b) are arranged in an array, in particular wherein the plasma flames (12) of the plurality of devices (10, 10a, 10b) generate a common plasma flame (29). Plasma generation device (100) according to the preceding claim, characterized in that the plasma generation spaces (16) are arranged in a honeycomb structure. Plasma generating device (100) according to Claim 6 or 7 , characterized in that the plasma generation spaces (16) are arranged such that the plasma flames (12) create a cyclone. Plasma generating device (100) according to one of the Claims 6 until 8th , characterized in that the induction coils (23) and/or the further induction coils (25) of at least two, in particular all, devices (10, 10a, 10b) are electrically and/or magnetically coupled to each other. Plasma generating device (100) according to one of the Claims 6 until 9 , characterized in that the devices (10, 10a, 10b) are coupled to one another in such a way that a loss of power at one device (10, 10a, 10b) can be compensated by an increase in power at at least one other device (10, 10a, 10b). High-temperature processing plant, in particular melting plant (26) for melting a material (28) by means of melting heat, in particular a metal, preferably aluminium, comprising at least one device (10, 10a, 10b) according to one of the Claims 1 until 5 or a plasma generating device (100) according to one of the Claims 6 until 10 , wherein the high-temperature process plant, in particular melting plant (26), is set up such that the heat, in particular heat of fusion, is generated at least partially, in particular completely, by means of the device (10, 10a, 10b) or the plasma generation device (100). High-temperature process plant, in particular melting plant (26), according to the preceding claim, characterized in that the high-temperature process plant, in particular melting plant (26), comprises a combustion chamber, in particular melting chamber (30), in which the material (28) to be processed, in particular to be melted, in particular metal, preferably aluminum, is arranged or can be arranged, wherein the high-temperature process plant, in particular melting plant (26), is set up in such a way that the plasma flame (12, 29) or plasma flames (12, 29) generated by means of the device (10, 10a, 10b) or by means of the plasma generation device (100) can be at least partially introduced into the combustion chamber, in particular melting chamber (30). Method for operating a device (10, 10a, 10b) according to one of the Claims 1 until 5 , a plasma generating device (100) according to one of the Claims 6 until 10 or a high-temperature processing plant, in particular a melting plant (26) according to Claim 11 or 12 , characterized by the steps: - providing the device (10, 10a, 10b), the plasma generation device (100) or the high-temperature process plant, in particular melting plant (26), - generating the plasma flame (12, 29) or the plasma flames (12, 29) by means of the device (10, 10a, 10b) or the devices (10, 10a, 10b), - wherein for generating the plasma flame (12, 29) or the plasma flames (12, 29), the first and the second energy supply (18, 22) supply the respective device (10, 10a, 10b) with energy, - operating the device (10, 10a, 10b), the plasma generation device (100) or the high-temperature process plant, in particular melting plant (26), - wherein during operation of the device (10, 10a, 10b), the plasma generation device (100) or high-temperature process plant, in particular melting plant (26), the respective device (10, 10a, 10b) is supplied with energy i) by means of the first energy supply (18) or ii) by means of the first and the second energy supply (18, 22). Procedure according to Claim 13 , characterized in that the respective second power supply unit (24) is operated continuously. Procedure according to Claim 13 , characterized in that the respective second power supply unit (24) is operated in a pulsed manner. Procedure according to Claim 15 , characterized in that the pulses (32) or pulse packets (34) generated by means of the pulsed operation of the respective second power supply unit (24) correspond to zero crossings of the alternating current intensity and/or voltage of the respective first power supply unit (20). Method according to one of the Claims 13 until 16 , characterized by the step: - varying the power fed in by means of the respective first and second energy supplies (18, 22) by adjusting the current intensity and/or voltage generated by means of the respective second power supply unit (24). Method according to one of the Claims 13 until 16 , characterized by the step: - varying the power fed in by means of the respective first energy supply (18) by adjusting the current intensity and/or voltage generated by means of the respective second power supply unit (24), wherein a coupling impedance of the respective first energy supply (18) can be varied by adjusting the current intensity and/or voltage generated by means of the respective second power supply unit (24). Method according to one of the preceding Claims 13 until 18 , characterized by the steps: - operating several devices (10, 10a, 10b), - Adjusting the power fed into the respective device (10, 10a, 10b) by varying a frequency, a frequency amplitude and/or a frequency phase of the current and/or voltage of a device (10, 10a, 10b) generated by the first and/or second power supply unit (20, 24) compared to a frequency, a frequency amplitude and/or a frequency phase of the current and/or voltage of at least one other device (10, 10a, 10b) generated by the first and/or second power supply unit (20, 24). Method according to one of the Claims 13 until 19 , characterized by the steps: - operating a plurality of devices (10, 10a, 10b), - compensating for a power loss in one device (10, 10a, 10b) by increasing the power in at least one other device (10, 10a, 10b). Method according to one of the Claims 13 until 20 , characterized by the steps: - operating a plurality of devices (10, 10a, 10b), - feeding an equal power into the respective devices (10, 10a, 10b). Method according to one of the Claims 13 until 20 , characterized by the steps: - operating a plurality of devices (10, 10a, 10b), - feeding a different power into at least two, in particular into all, devices (10, 10a, 10b) in order to generate a power difference between the respective devices (10, 10a, 10b) and thus a power profile. Method according to the preceding claim, characterized by the step: - varying the performance profile over time. Method according to one of the Claims 13 until 23 , characterized by the steps: - operating the device (10, 10a, 10b), the plasma generation device (100) or the high-temperature process plant, in particular the melting plant (26) - aligning the respective plasma flame (12, 29) in a radiation direction (36), - varying the radiation direction (36) in which the respective plasma flame (12, 29) is aligned during operation of the device (10, 10a, 10b), the plasma generation device (100) or the high-temperature process plant, in particular the melting plant (26).

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