DE102022129320A1 - PHONOLUBRICANT, METHOD FOR PRODUCING A PHONOLUBRICANT AND RADIATION-EMITTING COMPONENT - Google Patents

Abstract

A phosphor (1) with the molecular formula EA1-xMxCuSi4O10 is specified, where EA is an element or a combination of elements selected from the group of divalent elements, M is an element or a combination of elements selected from the group of divalent elements, EA and M are different, and 0 < x < 1. In addition, a method for producing a phosphor (1) and a radiation-emitting component (2) are specified.

Description

A phosphor, a method for producing a phosphor and a radiation-emitting component are specified.

One of the objects is to provide a phosphor that has increased efficiency. In particular, a phosphor with a broadband emission in the infrared spectral range is to be provided. In addition, it is an object to provide a method for producing such a phosphor and a radiation-emitting component with high efficiency.

According to one embodiment, the phosphor has the molecular formula EA _1-x M _x CuSi ₄ O _10. The phosphor is therefore a copper silicate.

Here and below, phosphors are described using molecular formulas. The elements listed in the molecular formulas are present in a charged form. Here and below, elements and/or atoms in relation to the molecular formulas of the phosphors therefore mean ions in the form of cations and anions, even if this is not explicitly stated. This also applies to element symbols if these are given without a charge number for the sake of clarity.

With the stated molecular formulas, it is possible that the phosphor contains further elements, for example in the form of impurities. These impurities together amount to at most 5 mol%, in particular at most 1 mol%, preferably at most 0.1 mol%.

The phosphor is generally uncharged on the outside. This means that there can be a complete charge balance between positive and negative charges in the phosphor on the outside. However, it is also possible that the phosphor does not formally have a complete charge balance to a small extent.

According to one embodiment of the phosphor, EA is an element or a combination of elements selected from the group of divalent elements.

The term "valence" in relation to a specific element refers to how many elements with a simple opposite charge are needed in a chemical compound to achieve charge balance. Thus, the term "valence" includes the charge number of the element.

Elements with a valence of two are called divalent elements. Divalent elements are often doubly positively charged in chemical compounds and have a charge number of +2. Charge balancing in a chemical compound can take place, for example, via two other elements that are singly negatively charged or another element that is doubly negatively charged. For example, Mg, Ca, Sr, Ba and Zn are divalent elements.

According to one embodiment of the phosphor, M is an element or a combination of elements selected from the group of divalent elements.

According to one embodiment of the phosphor, EA and M are different. In other words, EA and M comprise different elements.

According to one embodiment of the phosphor, 0 < x < 1. That is, both EA and M are present in the phosphor. In particular, 0 < x ≤ 0.8 or 0 < x ≤ 0.75.

According to one embodiment, the phosphor has the molecular formula EA _1-x M _x CuSi ₄ O ₁₀ , where EA is an element or a combination of elements selected from the group of divalent elements, M is an element or a combination of elements selected from the group of divalent elements, EA and M are different and 0 < x < 1.

In the present case, the phosphor has Cu in particular as an activator element. The activator element is responsible, for example, for the wavelength-converting properties of the phosphor. The Cu is, for example, introduced into a host lattice and in particular occupies its own lattice sites in the host lattice. In other words, the Cu is part of the host lattice. In the present case, the host lattice is also formed by the elements EA, M, Si and O in the phosphor.

By excitation with electromagnetic radiation of an excitation wavelength, an electronic transition from a ground state to an excited state is induced in the phosphor, in particular in the activator element. For example, a dd transition is induced in Cu. By emitting the electromagnetic radiation with an emission spectrum, the phosphor goes from the excited state back to the ground state.

In other phosphors with activator elements, the activator elements are particularly incorporated into the host lattice in such a way that they are present between lattice sites and/or partially replace other elements on lattice sites. In this way, it is only possible for the activator elements to be present in the phosphor in substoichiometric amounts. "Substoichiometric" is understood here and below to mean that an element is only present in the phosphor in very small proportions, for example in a proportion of at most 10 mol%.

Because the Cu in the phosphor described here has its own lattice sites and is part of the host lattice, the phosphor has an increased conversion probability compared to other phosphors with activator elements in substoichiometric amounts. The increased conversion probability is due in particular to the increase in the absorption of the excitation wavelength.

According to one embodiment, the phosphor emits electromagnetic radiation with an emission spectrum after excitation with electromagnetic radiation. The emission spectrum has an emission peak with an emission maximum λ _peak .

The emission spectrum is an intensity distribution of the electromagnetic radiation emitted by the phosphor after excitation with electromagnetic radiation of the excitation wavelength. The emission spectrum is usually presented in the form of a diagram in which a spectral intensity or a spectral radiation flux per wavelength interval ("spectral intensity/spectral radiation flux") of the electromagnetic radiation emitted by the phosphor is shown as a function of the wavelength λ. In other words, the emission spectrum represents a curve in a diagram in which the wavelength is plotted on the x-axis and the spectral intensity or the spectral radiation flux on the y-axis.

wobei λ_EA dem Emissionsmaximum von EACuSi₄O₁₀ entspricht und λ_M dem Emissionsmaximum von MCuSi₄O₁₀. Insbesondere weist der Verlauf des Emissionsmaximums λ_peak in Abhängigkeit von x keine monotone Steigung auf.According to one embodiment of the phosphor, the emission maximum λ _peak as a function of the x of the phosphor obeys the following equation: $${\lambda }_{peak}\left(x\right)>{\lambda }_{EA}-x\left({\lambda }_{EA}-{\lambda }_M\right)$$

where λ _EA corresponds to the emission maximum of EACuSi ₄ O ₁₀ and λ _M to the emission maximum of MCuSi ₄ O ₁₀ . In particular, the course of the emission maximum λ _peak as a function of x does not exhibit a monotonic slope.

It is usually expected that the emission maximum λ _peak follows the function λ _EA - x(λ _EA -λ _M ) as a function of x. In other words, the emission maximum λ _peak of the phosphor EA _1-x M _x CuSi ₄ O ₁₀ as a function of x is expected to lie between the emission maxima of the compounds EACuSi ₄ O ₁₀ and MCuSi ₄ O _10. Such a course of the emission maxima λ _peak as a function of x is expected due to Vegard's rule. Vegard's rule describes the linear dependence of lattice parameters of substitutional solid solutions. According to Vegard's rule, the lattice parameters of the substitutional solid solutions correspond to a weighted average of the lattice parameters of the two underlying pure components from which the substitutional solid solution is formed. For example, if a larger ion in the substitution solid solution is substituted by a smaller ion, the lattice parameters decrease according to the degree of substitution.

In the present case, a deviation from the function λ _EA - x(λ _EA - λ _M ) is observed in particular. The phosphor EA _1-x M _x CuSi ₄ O ₁₀ with 0 < x < 1, for example, has an emission maximum at longer wavelengths than the emission maximum of EACuSi ₄ O ₁₀ and/or MCuSi ₄ O ₁₀ . A change in the emission maximum λ _peak depending on x is particularly due to a different environment around the Cu atom in the phosphor. For example, the distance from Cu to the surrounding atoms determines a position of the emission maximum λ _peak .

According to one embodiment of the phosphor, the emission maximum λ _peak , depending on x, has a maximum between x = 0.3 and x = 0.7, in particular between x = 0.3 and x = 0.6.

According to one embodiment, the phosphor emits electromagnetic radiation after excitation with electromagnetic radiation in the range between 550 nanometers and 700 nanometers inclusive. In other words, the phosphor is excited with electromagnetic radiation in the orange to red spectral range. In particular, electromagnetic radiation in the range between 600 nanometers and 700 nanometers inclusive, in particular between 620 nanometers and 680 nanometers inclusive, is used to excite the phosphor. For example, the phosphor is excited with electromagnetic radiation with a wavelength of approximately 664 nanometers. It is also possible to excite the phosphor with electromagnetic radiation with a dominant wavelength λ _dom in the range between 590 nanometers and 670 nanometers inclusive.

To determine the dominant wavelength of electromagnetic radiation, a straight line is drawn in the CIE standard diagram starting from the white point (x = 0.333, y = 0.333) through the color location of the electromagnetic radiation. The intersection point of the straight line with the spectral color line that borders the CIE standard diagram indicates the dominant wavelength of the electromagnetic radiation. In general, the dominant wavelength deviates from the wavelength of the emission maximum.

According to one embodiment of the phosphor, the emission maximum of the emission peak is in the range from 850 nanometers to 1050 nanometers inclusive, in particular in the range from 900 nanometers to 1000 nanometers inclusive, for example in the range from 910 nanometers to 970 nanometers inclusive. In other words, the phosphor emits electromagnetic radiation in the infrared spectral range.

According to one embodiment of the phosphor, the emission peak has a full width at half maximum (FWHM) in the range between 125 nanometers and 180 nanometers inclusive, in particular in the range between 140 nanometers and 170 nanometers inclusive, for example in the range between 143 nanometers and 167 nanometers inclusive.

The term "half-width" refers to a curve with a maximum, such as the emission spectrum, where the half-width is the region on the x-axis corresponding to the two y-values that are half of the maximum.

Due to the emission properties described above, the phosphor described here will be used advantageously in applications in which a broadband emission in the infrared spectral range is required. For example, the phosphor is used in analysis devices that have a silicon detector. The sensitivity of the silicon detector decreases significantly, particularly with increasing wavelength from around 900 nanometers. This effect can be counteracted with the phosphor described here.

The phosphor described here is characterized in particular by its high efficiency, since the Cu responsible for the emission properties is present in the phosphor in stoichiometric amounts. The Cu in the present phosphor therefore has a higher concentration than activator elements in substoichiometric amounts.

According to one embodiment, the phosphor has a small Stokes shift. The Stokes shift refers to an energy difference between the absorption maximum of the phosphor and the emission maximum of the electromagnetic radiation emitted by the phosphor. The energy difference is released in particular in the form of heat. The small Stokes shift of the phosphor leads, for example, to the phosphor heating up less, which also means that components surrounding the phosphor are exposed to less thermal stress.

According to one embodiment of the phosphor, EA and M are selected from the group formed by the alkaline earth metals. In particular, EA and M are selected from the group formed by Ca, Sr and Ba.

According to one embodiment of the phosphor, EA is Ba and M is Sr. In other words, the phosphor has the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ .

According to one embodiment, the phosphor crystallizes in the tetragonal space group P4/ncc.

According to one embodiment, a crystal structure of the phosphor has SiO ₄ tetrahedra. The SiO ₄ tetrahedra are in particular corner-linked. For example, some of the SiO ₄ tetrahedra have a terminal O anion. In other words, some of the SiO ₄ tetrahedra are not corner-linked on all sides.

The crystal structure is a description of an arrangement of atoms or ions in a crystalline material. The crystal structure is made up of a three-dimensional unit cell that usually repeats periodically. In other words, the unit cell is the smallest repeating unit of the crystal structure of the host structure. The elements EA, M, Cu, Si and O each occupy fixed places in the unit cell, which are also referred to as point positions. The elements EA and M can occupy equivalent point positions. This means that either EA or M is located in the place described by the point position of the element M. Alternatively, EA and M can occupy different point positions.

The SiO ₄ tetrahedron, for example, has a tetrahedral gap. The tetrahedral gap is an area inside the respective tetrahedron. For example, the term "tetrahedral gap" refers to the area inside the tetrahedron that remains free if you imagine touching spheres placed in the corners of the tetrahedron. The SiO ₄ tetrahedron is spanned by four O atoms in particular. The tetrahedral gap of the SiO ₄ tetrahedron is occupied by Si, for example.

According to one embodiment of the phosphor, the SiO ₄ tetrahedra form two-dimensional layers with double the tetrahedron height. In particular, Cu ²⁺ ions are coordinated within the two-dimensional layers. For example, the Cu ²⁺ ions are coordinated in a square planar manner by terminal O ^2- anions of the SiO ₄ tetrahedra. The two-dimensional layers are in particular stacked plane-parallel and/or are orthogonal to the crystallographic c-axis.

According to one embodiment of the phosphor, the elements EA and M are arranged between the two-dimensional layers. In particular, EA and/or M are surrounded by O ^2- ions in eight-fold coordination.

A method for producing a phosphor is also specified. In particular, the phosphor described here is produced using the method. Features and embodiments that are described in connection with the phosphor therefore also apply to the method and vice versa.

• - Bereitstellen von Edukten,
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According to one embodiment of the method for producing a phosphor, the phosphor has the empirical formula EA _1-x M _x CuSi ₄ O ₁₀ , where EA is an element or a combination of elements selected from the group of divalent elements, M is an element or a combination of elements selected from the group of divalent elements, EA and M are different, and 0 < x < 1. The method comprises the following steps

• - Provision of reactants,
• - Mixing the reactants to form a reactant mixture, and
• - Heating the reactant mixture to form a product mixture.

In particular, the steps are carried out in the order given.

For example, the product mixture comprises the phosphor or the product mixture consists of the phosphor. Other components of the product mixture are, for example, reactants that did not react during the production of the phosphor, impurities and/or secondary phases that were formed during production.

According to one embodiment of the method, the reactants are selected from the following group: oxides of EA, M, Cu and Si, carbonates of EA, M and Cu, hydroxides of EA, M and Cu, oxalates of EA, M and Cu, citrates of EA, M and Cu. In particular, the reactants are selected from a group formed by SiO ₂ , CuO and carbonates of EA, M and Cu. In particular, the corresponding oxides form from the carbonates during heating.

According to one embodiment of the method, a flux is added to the reactant mixture. The flux advantageously accelerates and/or enables melting of the reactants during heating. Alternatively or additionally, diffusion of ions of the reactants through the reactant mixture, in particular the solid reactant mixture, can be accelerated with the aid of the flux. In particular, carbonates, for example Li ₂ CO ₃ and/or Na ₂ CO ₃ , are used as fluxes.

According to one embodiment of the method, the reactant mixture is heated to a temperature of at least 900 °C. In particular, the reactant mixture is heated to a temperature in the range between 950 °C and 1200 °C inclusive.

According to one embodiment of the method, the reactant mixture is heated for a time in the range between 1 hour and 24 hours inclusive, in particular in the range between 10 hours and 15 hours inclusive. For example, the reactant mixture is heated for a time of about 12 hours.

According to one embodiment of the method, the product mixture is cooled after heating and heated again. This advantageously achieves complete conversion of the reactants to the desired product. In particular, a temperature when reheating the product mixture is equal to or lower than the temperature when heating the reactant mixture. The reheating of the product mixture takes place for a time in the range between 1 hour and 24 hours inclusive, in particular in the range between 10 hours and 15 hours inclusive. For example, the reheating of the product mixture takes place for a time of about 12 hours.

A radiation-emitting component is also specified. In particular, the phosphor described here is designed and intended for use in the radiation-emitting component described here. Features and embodiments that are described in connection with the phosphor and/or the method also apply to the radiation-emitting component and vice versa.

According to one embodiment, the radiation-emitting component comprises a semiconductor chip which, during operation, emits electromagnetic radiation of a first wavelength range, and a conversion element with the phosphor described above.

In particular, the semiconductor chip comprises an active semiconductor layer sequence that contains an active region that generates the electromagnetic radiation of the first wavelength range during operation of the component. The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip. The electromagnetic radiation of the first wavelength range is emitted through a radiation exit surface of the semiconductor chip.

For example, the conversion element is arranged on the semiconductor chip in such a way that the conversion element covers the radiation exit surface of the semiconductor chip. In particular, the conversion element is in direct contact with the semiconductor chip. Alternatively, the conversion element is arranged at a distance from the semiconductor chip.

By using the phosphor described here in the radiation-emitting component, a radiation-emitting component can advantageously be provided that has a broadband emission in the infrared spectral range. For example, the radiation-emitting component is operated in a pulsed manner, so that the radiation-emitting component can be used in particular in spectrometers and/or sensor applications.

In particular, due to the phosphor's emission in the wavelength range between 850 nanometers and 1050 nanometers, the radiation-emitting component can be used together with a silicon detector, for example a silicon photodiode. Although the silicon detector has a lower sensitivity from a wavelength of around 900 nanometers, the radiation-emitting component described here counteracts this effect, since the phosphor efficiently provides electromagnetic radiation in precisely this wavelength range. This can advantageously increase the measurement accuracy of spectroscopy applications.

According to one embodiment of the radiation-emitting component, the first wavelength range comprises wavelengths with a dominant wavelength λ _dom in the range between 610 nanometers and 670 nanometers inclusive. For example, the first wavelength range comprises wavelengths with a dominant wavelength of approximately 660 nanometers. In other words, the semiconductor chip according to the present embodiment emits electromagnetic radiation in the red spectral range.

According to one embodiment of the radiation-emitting component, the phosphor converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. In particular, the second wavelength range is at least partially different from the first wavelength range. For example, the second wavelength range comprises electromagnetic radiation in the infrared spectral range.

According to one embodiment of the radiation-emitting component, the first wavelength range comprises wavelengths with a dominant wavelength λ _dom in the range between 430 nanometers and 470 nanometers inclusive. In other words, the semiconductor chip emits electromagnetic radiation from the blue spectral range.

According to one embodiment of the radiation-emitting component, the conversion element comprises a further phosphor. In particular, the further phosphor converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The third wavelength range is at least partially different from the first wavelength range. In particular, the third wavelength range comprises wavelengths with a dominant wavelength λ _dom in the range between 590 nanometers and 670 nanometers inclusive. For example, the further phosphor converts the electromagnetic radiation of the first wavelength range partially or completely into the electromagnetic radiation of the third wavelength range.

According to one embodiment of the radiation-emitting component, the phosphor converts the electromagnetic radiation of the third wavelength range into the electromagnetic radiation of the second wavelength range. The second wavelength range is at least partially different from the first wavelength range and the second wavelength range.

By using the additional phosphor in the conversion element, it is advantageously possible to use a blue-emitting semiconductor chip in the radiation-emitting component. In particular, blue-emitting semiconductor chips are characterized by high efficiency. Furthermore, by selecting the additional phosphor, the third wavelength range can be specifically adjusted to the absorption properties of the phosphor.

According to one embodiment of the radiation-emitting component, the phosphor converts the electromagnetic radiation of the first wavelength range and/or the electromagnetic radiation of the third wavelength range partially or completely into the electromagnetic radiation of the second wavelength range.

According to one embodiment of the radiation-emitting component, the further phosphor is selected from the following group: quantum dots, AEAlSiN ₃ :Eu ²⁺ , Sr (Sr _a AE _1-a ) Si ₂ Al ₂ N ₆ :Eu ²⁺ , AE ₂ Si ₅ N ₈ : Eu ²⁺ , SrLi ₂ Al ₂ O ₂ N ₂ : Eu ²⁺ , LiSrAl ₃ N ₄ :Eu ²⁺ , K ₂ SiF ₆ :Mn ⁴⁺ . In particular, AE for the further phosphors is selected from the group formed by Mg, Ca, Sr, Ba and combinations thereof. For example, the quantum dots comprise CdS and/or CdSe. The further phosphors mentioned are advantageously characterized by a high efficiency for converting the electromagnetic radiation of the first wavelength range into the electromagnetic radiation of the third wavelength range.

According to one embodiment of the radiation-emitting component, the conversion element comprises a matrix material in which the phosphor and/or the further phosphor is embedded. The phosphor and/or the further phosphor according to this embodiment is present, for example, in the form of particles. In particular, the matrix material is selected from a group formed from polysiloxane, in particular silicone, epoxy resin and combinations thereof.

According to one embodiment of the radiation-emitting component, the conversion element comprises fillers. The fillers are in particular non-converting. The fillers advantageously adjust rheological properties or the scattering behavior of the conversion element. In particular, the filler comprises or consists of SiO ₂ or TiO ₂ .

• 1 zeigt eine schematische Darstellung eines Leuchtstoffs gemäß einem Ausführungsbeispiel.
• 2 zeigt Pulverdiffraktogramme von Leuchtstoffen gemäß verschiedener Ausführungsbeispiele und Vergleichsbeispiele.
• 3 zeigt ein Pulverdiffraktogramm eines Leuchtstoffs gemäß einem Ausführungsbeispiel.
• 4 zeigt exemplarisch die Abhängigkeit eines Emissionsmaximums von x bei Leuchtstoffen mit der Summenformel Ba_1-xSr_xCuSi₄O₁₀.
• 5 zeigt Emissionsspektren von Leuchtstoffen gemäß verschiedener Ausführungsbeispiele und Vergleichsbeispiele.
• 6 zeigt exemplarisch Auswertungen von Messungen von Absorption und Reflexion von Ba_1-xSr_xCuSi₄O₁₀ durch die Kubelka-Munk-Funktion.
• 7 zeigt eine sekundärelektronenmikroskopische Aufnahme eines Leuchtstoffs gemäß einem Ausführungsbeispiel.
• 8 zeigt schematisch verschiedene Schritte eines Verfahrens zur Herstellung eines Leuchtstoffs gemäß einem Ausführungsbeispiel.
• 9 bis 17 zeigen Emissionsspektren von Leuchtstoffen gemäß verschiedener Ausführungsbeispiele und Vergleichsbeispiele.
• 18 zeigt eine schematische Schnittdarstellung eines strahlungsemittierenden Bauelements gemäß einem Ausführungsbeispiel.
• 19 zeigt ein Emissionsspektrum eines strahlungsemittierenden Bauelements gemäß einem Ausführungsbeispiel.
• 20 zeigt eine schematische Schnittdarstellung eines strahlungsemittierenden Bauelements gemäß einem Ausführungsbeispiel.

Further advantageous embodiments, configurations and further developments of the phosphor, the method for producing a phosphor and the radiation-emitting component emerge from the following exemplary embodiments shown in conjunction with the figures.

• 1 shows a schematic representation of a phosphor according to an embodiment.
• 2 shows powder diffractograms of phosphors according to various embodiments and comparative examples.
• 3 shows a powder diffractogram of a phosphor according to an embodiment.
• 4 shows the dependence of an emission maximum on x for phosphors with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ .
• 5 shows emission spectra of phosphors according to various embodiments and comparative examples.
• 6 shows exemplary evaluations of measurements of absorption and reflection of Ba _1-x Sr _x CuSi ₄ O ₁₀ by the Kubelka-Munk function.
• 7 shows a secondary electron micrograph of a phosphor according to an embodiment.
• 8th schematically shows various steps of a method for producing a phosphor according to an embodiment.
• 9 to 17 show emission spectra of phosphors according to various embodiments and comparative examples.
• 18 shows a schematic sectional view of a radiation-emitting component according to an embodiment.
• 19 shows an emission spectrum of a radiation-emitting component according to an embodiment.
• 20 shows a schematic sectional view of a radiation-emitting component according to an embodiment.

Elements that are the same, similar or have the same effect are provided with the same reference symbols in the figures. The figures and the proportions of the elements shown in the figures to one another are not to be regarded as being to scale. Rather, individual elements, in particular layer thicknesses, may be shown exaggeratedly large for better representation and/or better understanding.

The phosphor 1 according to the embodiment of the 1 obeys the empirical formula EA _1-x M _x CuSi ₄ O ₁₀ , where EA is an element or a combination of elements selected from the group of divalent elements, M is an element or a combination of elements selected from the group of divalent elements, EA and M are different and 0 < x < 1. In particular, the phosphor 1 has the empirical formula Ba _1-x Sr _x CuSi ₄ O ₁₀ . The phosphor 1 is present in the form of particles. The particles in particular have a grain size in the range from 500 nanometers to 100 micrometers inclusive.

The phosphor 1 according to the 1 crystallizes in the space group P4/ncc. A crystal structure 11 of the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ has SiO ₄ tetrahedra. In the SiO ₄ tetrahedra, the Si ⁴⁺ ions are tetrahedrally coordinated by four O ^2- ions each. The SiO ₄ tetrahedra are linked to one another via three of the four O ^2- ions in such a way that two-dimensional layers 12 are formed with twice the height of the tetrahedron. Within the layers 12, Cu ²⁺ ions are coordinated in a square planar manner by non-bridging O ^2- ions of the SiO ₄ tetrahedra. This creates two-dimensional [CuSi ₄ O ₁₀ ^2- ] _∞ layers. The layers 12 are orthogonal to the crystallographic c-axis and are stacked plane-parallel to one another. The alkaline earth ions 13 Ba ²⁺ and Sr ²⁺ are arranged between the layers 12 and are surrounded by O ^2- ions in eight-fold coordination. The lattice positions of the alkaline earth ions 13 in the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ can be occupied exclusively by Sr ²⁺ or Ba ²⁺ or by a mixture of Sr ²⁺ and Ba ²⁺ .

2 shows powder diffractograms P1 to P5 of phosphors 1 according to various embodiments and comparative examples. The powder diffractogram P1 results from the phosphor 1 with the molecular formula BaCuSi ₄ O ₁₀ . The powder diffractogram P2 results from the phosphor 1 with the molecular formula powder diffractogram P3 results from the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0.5, i.e. from Ba _0.5 Sr _0.5 CuSi ₄ O ₁₀ . The powder diffractogram P4 results from the phosphor 1 with the molecular formula Ba _{1_x Sr x CuSi 4 O 10 with x = 0.75, i.e. from Ba 0.25 Sr 0.75 CuSi 4 O 10 . The powder} diffractogram P5 results from the phosphor 1 _with the molecular _{formula SrCuSi 4 O 10 .}

The powder diffractogram P6 in the 3 results from the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0.33, i.e. from Ba _0.66 Sr _0.33 CuSi ₄ O ₁₀ .

Table 1 shows lattice parameters a and c as well as the cell volume V, which are refined for the unit cell of the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ , in particular using the powder diffractograms P1 to P6. Table 1: Lattice parameters of Ba _1-x Sr _x CuSi ₄ O ₁₀ . x in Ba _1-x Sr _x CuSi ₄ O ₁₀ a/Å c/Å v/Å ³ 0.00 7,4411(2) 16,1307(9) 893.16 0.10 7,4343(4) 16,091(2) 889.34 0.20 7,4252(4) 16,053(1) 885.09 0.25 7,421(1) 16,019(4) 882.10 0.33 7,4134(3) 15,975(1) 877.96 0.50 7,3977(3) 15,878(1) 868.95 0.67 7,3860(4) 15,782(2) 860.96 0.75 7,3817(4) 15,732(1) 857.25 0.80 7,3797(3) 15,713(1) 855.71 0.90 7,3749(3) 15,656(1) 851.55 1.00 7,3717(2) 15,590(1) 847.19

In the 4 the dependence of the emission maximum λ _peak of x of the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ is shown. The points 4-1 correspond to the measured emission maxima λ _peak at different values of x. The rectangle 4-2 gives a literature value for the emission maximum λ _peak of BaCuSi ₄ O ₁₀ . The circle 4-3 shows a literature value for the emission maximum λ _peak of SrCuSi ₄ O ₁₀ . The dashed line 4-4 shows the expected course of the emission maxima λ _peak as a function of x. However, it is clearly visible that the emission maximum λ _peak as a function of x does not follow the expected course 4-4. In this case, the emission maximum λ _peak as a function of x obeys the following equation: λ _peak (x) > 945 nm - x (945 nm - 916 nm). The emission maxima λ _peak therefore have larger values depending on x than the expected curve 4-4. The curve of the emission maxima λ _peak has a maximum in the range between x = 0.33 and x = 0.50 inclusive.

The individual values for the emission maxima λ _peak , which are shown in the 4 are shown graphically in Table 2. Table 2 also shows the full width at half maximum (FWHM) for the emission peaks corresponding to the emission maxima λ _peak . Table 2: Emission maxima λ _peak and full width at half maximum for Ba _{1_x} Sr _x CuSi ₄ O ₁₀ . x in Ba _1-x Sr _x CuSi ₄ O ₁₀ λ _peak FWHM 0, 00 945nm 137nm 0.10 955nm 150nm 0.20 960nm 157nm 0.25 963nm 160nm 0.33 964nm 163nm 0.50 964nm 167nm 0.67 958nm 167nm 0.75 950nm 161nm 0.80 944nm 157nm 0.90 933nm 143nm 1.00 916nm 125nm

Emission spectra for the phosphor 1 with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0, x = 0.2, x = 0.5, x = 0.75 and x = 1 are shown in the 5 Here, too, it can be seen that the emission maxima λ _peak for the values x = 0.2, x = 0.5 and x = 0.75 are at longer wavelengths than the emission maxima λ _peak for x = 0 and x = 1.

aufgetragen gegen die Wellenlänge λ in Nanometer in einem Bereich von einschließlich 450 Nanometer bis einschließlich 700 Nanometer. Mit Hilfe der Kubelka-Munk-Funktion lässt sich eine Aussage über den Absorptionsbereich des Leuchtstoffs 1 treffen. Vorliegend zeigt der Leuchtstoff 1 eine starke Absorption von elektromagnetischer Strahlung im Bereich von etwa 600 Nanometern bis etwa 650 Nanometer.In the 6 The Kubelka-Munk function for the phosphor 1 with the formula Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0, x = 0.5 and x = 1 is plotted. The diagram of the 6 shows the value $\frac{{\left(1-RemissiOn\right)}^2}{2\cdot RemissiOn}$

plotted against the wavelength λ in nanometers in a range from 450 nanometers to 700 nanometers inclusive. With the help of the Kubelka-Munk function, a statement can be made about the absorption range of the phosphor 1. In the present case, the phosphor 1 shows a strong absorption of electromagnetic radiation in the range from about 600 nanometers to about 650 nanometers.

A secondary electron micrograph of a phosphor 1 according to the embodiment with the molecular formula Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0.5 is shown in the 7 The phosphor 1 is in the form of a powder. The powder has particles of different sizes. The image shows particles with a size of less than 5 micrometers to greater than 20 micrometers.

In the process for producing a phosphor 1 having the molecular formula EA _1-x M _x CuSi ₄ O ₁₀ of the embodiment of the 8th In a process step S1, reactants are provided. In the present case, the reactants are selected from the group formed by the carbonates and/or oxides of EA, M and Cu as well as SiO ₂ . In a second process step S2, the reactants are mixed to form a reactant mixture. In particular, a flux is added to the reactant mixture. The reactant mixture is then heated in a third process step S3 to a temperature in the range between 950 °C and 1200 °C inclusive, so that a product mixture is obtained.

In particular, in a fourth process step S4, the product mixture is then cooled and heated again to a temperature in the range between 950 °C and 1200 °C inclusive. Advantageously, this leads to a complete conversion of the reactants to the desired product, the phosphor 1 with the molecular formula EA _1-x M _x CuSi ₄ O ₁₀ , or to the crystallization of the product with as few defects as possible in the host lattice.

Further comparative examples and embodiments of the method for producing a phosphor 1 are described below.

Example 1 - Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0.5

In a first process step S1, the reactants barium carbonate, strontium carbonate, basic copper carbonate and silicon dioxide as well as sodium carbonate are provided. The quantity ratios of the individual reactants are shown in Table 3. The reactants are mixed in a second process step S2 and the reactant mixture thus obtained is transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. In a third process step S3, the reactant mixture is heated at a temperature of approximately 1050 °C for 12 hours. After cooling, the product mixture thus obtained is ground using a mortar mill and then sieved using an analysis sieve with a sieve gauze with a mesh size of approximately 31 micrometers. In a fourth process step S4, the product mixture is transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. The product mixture is heated at a temperature of approximately 1050 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a mesh size of approximately 31 micrometers. A material is obtained whose emission spectrum E1 in 9 is shown. Table 3: Amounts of reactants for the embodiment 1. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 80.35 15.86 Strontium carbonate 147.63 80.35 11.86 Basic copper carbonate 221.12 80.35 17.77 Silicon dioxide 60.08 654.05 39.30 sodium 105.99 2.07 0.22

Example 2 - Ba _{1_x} Sr _x CuSi ₄ O ₁₀ with x = 0.25

In a first process step S1, the reactants barium carbonate, strontium carbonate, basic copper carbonate and silicon dioxide are provided. The corresponding quantity ratios of the individual reactants are shown in Table 4. In a second process step S2, the reactants are mixed to form a reactant mixture and transferred to a corundum crucible. This is then placed in a chamber furnace. In a third process step S3, the reactant mixture is heated at a temperature of approximately 1050 °C for 12 hours. After cooling, the product mixture obtained in this way is ground using a mortar mill and then sieved using an analysis sieve with a sieve gauze with a mesh size of approximately 31 micrometers. In a fourth process step S4, the product mixture is transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. The product mixture is heated at a temperature of approximately 950 °C for 12 hours. The cooled reaction product is ground using a mortar mill and then sieved using an analysis sieve with a mesh size of approximately 31 micrometers. A material is obtained whose emission spectrum E2 in 10 Table 4: Amounts of reactants for embodiment 2. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 111.11 21.93 Strontium carbonate 147.63 37.04 5.47 Basic copper carbonate 221.12 74.07 16.38 Silicon dioxide 60.08 602.97 36.23

Example 3 - Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0.5

In a first process step S1, the reactants barium carbonate, strontium carbonate, basic copper carbonate and silicon dioxide are provided. The corresponding quantity ratios of the individual reactants are given in Table 5. In a second process step S2, the reactants are mixed to form a reactant mixture and transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. In a third process step S3, the reactant mixture is heated at a temperature of around 1050 °C for 12 hours. After cooling, the product mixture obtained in this way is ground using a mortar mill and then sieved using an analysis sieve with a sieve gauze with a mesh size of around 31 micrometers. In a fourth process step S4, the product mixture is transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. The product mixture is heated at a temperature of around 950 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a mesh size of approximately 31 micrometers. A material is obtained whose emission spectrum E3 in 11 Table 5: Amounts of reactants for embodiment 3. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 75.82 14.96 Strontium carbonate 147.63 75.82 11.19 Basic copper carbonate 221.12 75.82 16.77 Silicon dioxide 60.08 617.17 37.08

Example 4 - Ba _{1_x} Sr _x CuSi ₄ O ₁₀ with x = 0.75

In a first process step S1, the reactants barium carbonate, strontium carbonate, basic copper carbonate and silicon dioxide are provided. The corresponding quantity ratios of the individual reactants are given in Table 6. In a second process step S2, the reactants are mixed to form a reactant mixture and transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. In a third process step S3, the reactant mixture is heated at a temperature of around 1050 °C for 12 hours. After cooling, the product mixture obtained in this way is ground using a mortar mill and then sieved using an analysis sieve with a sieve gauze with a mesh size of around 31 micrometers. In a fourth process step S4, the product mixture is transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. The product mixture is heated at a temperature of around 950 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a mesh size of approximately 31 micrometers. A material is obtained whose emission spectrum E4 in 12 Table 6: Amounts of reactants for embodiment 4. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 38.82 7.66 Strontium carbonate 147, 63 116.47 17,20 Basic copper carbonate 221.12 77.65 17,17 Silicon dioxide 60.08 632.06 37, 97

Comparative example 1 - Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0

The reactants barium carbonate, basic copper carbonate and silicon dioxide are provided. The reactants are mixed and the mixture is transferred to a corundum crucible. This is then placed in a chamber furnace. The corresponding proportions of the individual reactants are given in Table 7. The mixture is heated at a temperature of about 1000 °C for 12 hours. The cooled reaction product is ground using a mortar mill and then sieved using an analysis sieve with a sieve gauze of about 31 micrometers. A material is obtained whose emission spectrum E5 in 13 Table 7: Amounts of reactants for comparative example 1. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 181.02 35.72 Basic copper carbonate 221.12 90.51 20.01 Silicon dioxide 60.08 736.75 44.26

Comparative example 2 - Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0

The reactants barium carbonate, basic copper carbonate and silicon dioxide as well as potassium carbonate are provided. The reactants are mixed and the mixture is transferred to a corundum crucible. This is then placed in a chamber furnace. The corresponding proportions of the individual raw materials are given in Table 8. The mixture is heated at a temperature of around 1050 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a sieve gauze of approximately 31 micrometers mesh size. The mixture is transferred to a corundum crucible. This is then placed in a chamber furnace. The mixture is heated at a temperature of around 950 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a sieve gauze of approximately 31 micrometers mesh size. width of approximately 31 micrometers. A material is obtained whose emission spectrum E6 in 14 Table 8: Amounts of reactants for comparative example 2. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 144.09 28.44 Basic copper carbonate 221.12 72.05 15.93 Silicon dioxide 60, 08 586.47 35.24 Potassium carbonate 138.21 2.88 0.40

Comparative example 3 - Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 0

The reactants barium carbonate, basic copper carbonate and silicon dioxide as well as lithium carbonate are provided. The corresponding proportions of the individual reactants are shown in Table 9. The reactants are mixed and the mixture is transferred to a corundum crucible. The corundum crucible is then placed in a chamber furnace. The mixture is heated at a temperature of about 1050 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a sieve gauze of about 31 micrometers. The material is transferred to a corundum crucible. This is then placed in a chamber furnace. The mixture is heated at a temperature of about 950 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a mesh size of about 31 micrometers. A material is obtained whose emission spectrum E7 in 15 Table 9: Amounts of reactants for comparative example 3. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 143.22 28.26 Basic copper carbonate 221.12 71.61 15.84 Silicon dioxide 60.08 582.91 35.02 Lithium carbonate 73, 89 11.92 0.88

Comparative example 4 - Ba _{1_x} Sr _x CuSi ₄ O ₁₀ with x = 0

The reactants barium carbonate, copper oxide and silicon dioxide as well as sodium carbonate are provided. The corresponding proportions of the individual reactants are given in Table 10. The reactants are mixed and the mixture is transferred to a corundum crucible. This is then placed in a chamber furnace. The mixture is heated at a temperature of about 1150 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a sieve gauze of about 31 micrometers. The material is transferred to a corundum crucible. This is then placed in a chamber furnace. The mixture is heated at a temperature of about 1150 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a mesh size of about 31 micrometers. A material is obtained whose emission spectrum E8 in 16 Table 10: Amounts of reactants for comparative example 4. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Barium carbonate 197.34 100.50 19.83 Copper(II) oxide 79.54 52, 62 4.19 Silicon dioxide 60, 08 428.29 25.73 sodium 105.99 2.37 0.25

Comparative example 5 - Ba _1-x Sr _x CuSi ₄ O ₁₀ with x = 1

The reactants strontium carbonate, basic copper carbonate and silicon dioxide as well as sodium carbonate are provided. The corresponding proportions of the individual reactants are shown in Table 11. The reactants are mixed and the mixture is transferred to a corundum crucible. This is then placed in a chamber furnace. The mixture is heated at a temperature of about 1050 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a sieve gauze of about 31 micrometers. The material is transferred to a corundum crucible. This is then placed in a chamber furnace. The mixture is heated at a temperature of about 950 °C for 12 hours. The cooled reaction product is ground using a mortar grinder and then sieved using an analysis sieve with a mesh size of about 31 micrometers. A material is obtained whose emission spectrum E8 in 17 Table 11: Amounts of reactants for comparative example 5. Educt Molar mass [g/mol] Amount of substance [mmol] Mass [g] Strontium carbonate 147.63 158.71 23.43 Basic copper carbonate 221.12 79.35 17,55 Silicon dioxide 60.08 645.93 38.81 sodium 105.99 2.04 0.22

The emission spectra E1 to E9 of the 9 to 17 are each recorded after excitation with electromagnetic radiation of an excitation spectrum having an excitation maximum at a wavelength of approximately 664 nanometers and are shown in a wavelength range from 800 nanometers up to and including 1300 nanometers.

The radiation-emitting component 2 according to the embodiment of the 18 has a semiconductor chip 3, which emits electromagnetic radiation of a first wavelength range during operation, and a conversion element 4. The semiconductor chip 3 has a substrate 31 on which a semiconductor layer sequence 32 has been epitaxially grown. The semiconductor layer sequence 32 comprises an active region 33, which generates the electromagnetic radiation of the first wavelength range during operation of the component. In the present case, the semiconductor chip 3 emits electromagnetic radiation with a first wavelength range. The first wavelength range has a dominant wavelength λ _dom in the range between 612 nanometers and 670 nanometers inclusive. For example, the semiconductor chip 3 emits electromagnetic radiation with a dominant wavelength λ _dom of approximately 660 nanometers.

The conversion element 4 is arranged downstream of the semiconductor chip 3 and comprises the phosphor 1. The phosphor 1 converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The second wavelength range is at least partially different from the first wavelength range. The phosphor 1 is embedded in a matrix material comprising silicone. The phosphor 1 has the empirical formula Ba _0.67 Sr _0.33 CuSi ₄ O _10. The conversion element also contains a filler 5. The filler 5 comprises SiO ₂ or consists thereof. For example, the conversion element 4 comprises 1.28 g of the silicone, 0.02 g of the filler 5 and 0.70 g of the phosphor 1.

An emission spectrum SB of the radiation-emitting component 2 of the embodiment of the 18 is in the 19 shown. The emission spectrum SB is shown in a wavelength range from 500 nanometers to 1300 nanometers inclusive. In the present case, the phosphor 1 only partially converts the electromagnetic radiation of the first wavelength range emitted by the semiconductor chip 3.

The radiation-emitting component 2 according to the 20 Compared to the radiation-emitting component 2 of the 18 a further phosphor 6. The phosphor 6 is arranged in the conversion element 4 and, like the phosphor 1, is embedded in a matrix material, for example silicone. The conversion element 4 is in direct contact with the semiconductor chip 3.

The semiconductor chip 3 emits electromagnetic radiation of a first wavelength range. The first wavelength range has a dominant wavelength λ _dom in the range of including 430 nanometers up to and including 470 nanometers. The further phosphor 6 converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The third wavelength range is partially different from the first wavelength range. The further phosphor 6 is, for example, (Sr,Ca)AlSiN ₃ :Eu ²⁺ or Sr (Sr _a AE _1-a ) Si ₂ Al ₂ N ₆ :Eu ²⁺ with AE = Mg, Ca and/or Ba. The further phosphor 6 can alternatively be selected from the following group: quantum dots, AE ₂ Si ₅ N ₈ : Eu ²⁺ , SrLi ₂ Al ₂ O ₂ N ₂ :Eu ²⁺ , LiSrAl ₃ N ₄ :Eu ²⁺ , K ₂ SiF ₆ :Mn ⁴⁺ .

The phosphor 1 converts the electromagnetic radiation of the third wavelength range into electromagnetic radiation of the second wavelength range. For example, the phosphor 1 is Ba _1-x Sr _x CuSi ₄ O ₁₀ .

The features and embodiments described in connection with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described.

Furthermore, the embodiments described in connection with the figures may alternatively or additionally have further features according to the description in the general part.

The invention is not limited to the embodiments by the description thereof. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or embodiments.

List of reference symbols

1

Fluorescent

11

Crystal structure

12

layer

13

Alkaline earth ion

2

radiation-emitting component

3

Semiconductor chip

31

Substrat

32

Semiconductor layer sequence

33

active area

4

Conversion element

5

filler

6

additional phosphor

E1 - E9

Emission spectra

P1 - P6

X-ray powder diffractograms

R

Remission

S1 - S4

Process steps

SB

Emission spectrum of a radiation-emitting device

Claims (17)

Phosphor (1) having the molecular formula EA _1-x M _x CuSi ₄ O ₁₀ , where - EA is an element or a combination of elements selected from the group of divalent elements, - M is an element or a combination of elements selected from the group of divalent elements, - EA and M are different, and - 0 < x < 1. Phosphor (1) according to the preceding claim, wherein - the phosphor (1) emits electromagnetic radiation after excitation with electromagnetic radiation with an emission spectrum which has an emission peak with an emission maximum λ _peak , and - the emission maximum λ _peak as a function of the x of the phosphor (1) obeys the following equation: $${\lambda }_{peak}\left(x\right)>{\lambda }_{EA}-x\left({\lambda }_{EA}-{\lambda }_M\right)$$

where λ _EA corresponds to the emission maximum of EACuSi ₄ O ₁₀ and λ _M to the emission maximum of MCuSi ₄ O ₁₀ . Phosphor (1) according to the preceding claim, wherein the emission maximum λ _peak has a maximum between x = 0.3 and x = 0.7 as a function of x. Phosphor (1) according to one of the preceding claims, wherein - the phosphor (1) emits electromagnetic radiation with the emission spectrum after excitation with electromagnetic radiation in the range between 550 nanometers and 700 nanometers inclusive, - the emission maximum of the emission peak of the emission spectrum is in the range from 850 nanometers to 1050 nanometers inclusive. Phosphor (1) according to one of the preceding claims, wherein the emission peak has a half-width in the range between 125 nanometers and 180 nanometers inclusive. Phosphor (1) according to one of the preceding claims, wherein EA and M are selected from the group formed by the alkaline earth metals. A phosphor (1) according to any one of the preceding claims, wherein EA is Ba and M is Sr. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) crystallizes in the tetragonal space group P4/ncc. Process for producing a phosphor (1) with the empirical formula EA _1-x M _x CuSi ₄ O ₁₀ , where - EA is an element or a combination of elements selected from the group of divalent elements, - M is an element or a combination of elements selected from the group of divalent elements, - EA and M are different, and - 0 < x < 1, comprising the steps: - providing reactants, - mixing the reactants to form a reactant mixture, and - heating the reactant mixture so that a product mixture is formed. Process for producing a phosphor (1) according to the preceding claim, wherein the reactants are selected from the following group: oxides of EA, M, Cu and Si, carbonates of EA, M and Cu, hydroxides of EA, M and Cu, oxalates of EA, M and Cu, citrates of EA, M and Cu. Process for producing a phosphor (1) according to one of the Claims 9 or 10 , whereby a flux is added to the reactant mixture. Process for producing a phosphor (1) according to one of the Claims 9 until 11 , whereby the reactant mixture is heated to a temperature of at least 900 °C. Process for producing a phosphor (1) according to one of the Claims 9 until 12 , whereby the product mixture is cooled after heating and then heated again. Radiation-emitting component (2) with: - a semiconductor chip (3) which, during operation, emits electromagnetic radiation of a first wavelength range, and - a conversion element (4) with a phosphor (1) according to one of the Claims 1 until 7 . Radiation-emitting component (2) according to Claim 14 , in which - the first wavelength range comprises wavelengths with a dominant wavelength λ _dom in the range between 610 nanometers and 670 nanometers inclusive, - the phosphor (1) converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and - the second wavelength range is at least partially different from the first wavelength range. Radiation-emitting component (2) according to Claim 14 , in which - the first wavelength range comprises wavelengths with a dominant wavelength λ _dom in the range between 430 nanometers and 470 nanometers inclusive, - the conversion element (4) has a further phosphor (6), - the further phosphor (6) converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range which is at least partially different from the first wavelength range, - the phosphor (1) converts the electromagnetic radiation of the third wavelength range into the electromagnetic radiation of the second wavelength range, and - the second wavelength range is at least partially different from the first wavelength range and the third wavelength range. Radiation-emitting component (2) according to Claim 16 , in which the further phosphor (6) is selected from the following group: quantum dots, AEAlSiN ₃ : Eu ²⁺ , Sr(Sr _a AE _1-a ) Si ₂ Al ₂ N ₆ : Eu ²⁺ , AE ₂ Si ₅ N ₈ :Eu ²⁺ , SrLi ₂ Al ₂ O ₂ N ₂ :Eu ²⁺ , LiSrAl ₃ N ₄ : Eu ²⁺ , K ₂ SiF ₆ :Mn ⁴⁺ .

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