DE102022110322A1 - ELECTROACOUSTIC TRANSDUCER, METHOD FOR DETECTING SOUND WAVES AND METHOD FOR CONVERTING SOUND WAVES INTO ELECTRICAL SIGNALS - Google Patents

Abstract

An electroacoustic transducer (10) comprises a surface-emitting semiconductor laser (150, 150 ₁ ,...150 ₄ ) with a vertical resonator (125), an active zone (133) for emitting electromagnetic radiation, a first and a second resonator mirror (120, 130). The electroacoustic transducer (10) further comprises a membrane (135, 135 ₁ ,... 135 ₄ ), which can be deflected by a sound wave field (105), on which the first resonator mirror (120) is arranged, and a detector device (152) which is suitable is to detect the electromagnetic radiation emitted by the surface-emitting semiconductor laser (150, 150 ₁ ,...150 ₄ ).

Description

Embodiments of the invention relate to the conversion of acoustic signals, such as noise, speech and music, into electrical signals.

Electroacoustic transducers or microphones are suitable for converting sound waves into electrical signals. In general, this can be done, for example, by measuring the displacement of a movable element, for example a membrane, which can be deflected by the sound waves. The deflection can be determined using different methods, for example capacitive or optical methods that are based on interference. Other measurement methods are based on piezoelectric effects.

The present invention is based on the object of providing an improved electroacoustic transducer and an improved method for detecting sound waves or for converting sound waves into electrical signals.

According to embodiments, the task is solved by the subject matter of the independent claims. Advantageous further developments are defined in the dependent claims.

An electroacoustic transducer has a surface-emitting semiconductor laser with a vertical resonator, an active zone for emitting electromagnetic radiation, a first and a second resonator mirror and a membrane that can be deflected by a sound wave field and on which the first resonator mirror is arranged. The electroacoustic transducer further comprises a detector device which is suitable for detecting the electromagnetic radiation emitted by the surface-emitting semiconductor laser.

For example, the first resonator mirror can be arranged on a side of the membrane facing away from the active zone.

According to embodiments, the second resonator mirror is suitable for at least partially coupling out the emitted electromagnetic radiation.

The electroacoustic transducer can further have a waveguide which is suitable for guiding the emitted electromagnetic radiation to the detector device.

For example, the vertical cavity surface emitting semiconductor laser is disposed over a laser substrate, and the waveguide is disposed over a waveguide substrate. The laser substrate and the waveguide substrate are arranged one above the other.

According to embodiments, the detector device has a plurality of wavelength-selective beam splitters and associated detector elements.

At least one of the detector elements may have an active zone that contains components of the active zone of the surface-emitting semiconductor laser.

According to embodiments, the electroacoustic transducer has a plurality of surface-emitting semiconductor lasers and a plurality of membranes, wherein the detector device is suitable for detecting electromagnetic radiation emitted by the plurality of surface-emitting semiconductor lasers.

For example, at least two of the membranes have a different size.

An electronic device includes the electroacoustic transducer as described above. The electronic device may be selected from, for example, a telephone, a smartphone, a consumer electronic device, a headphone with a built-in microphone, a computer, and a portable electronic device.

A method for detecting sound waves includes supplying the sound waves to a laser device whose resonator length can be changed by the action of sound waves, and determining an intensity of electromagnetic radiation emitted by the laser device as a function of wavelength and time.

A method for converting sound waves into electrical signals includes supplying the sound waves to a laser device whose resonator length can be changed by the action of sound waves, and generating electrical signals from electromagnetic radiation emitted by the laser device.

The method can further comprise dividing the emitted electromagnetic radiation into partial beams, each with different wavelengths, and detecting an intensity of the respective partial beams.

For example, the laser device comprises a semiconductor laser with two resonator mirrors, one of the resonator mirrors being attached to a membrane that can be deflected by a sound field.

• 1A zeigt eine schematische Ansicht eines elektroakustischen Wandlers gemäß Ausführungsformen.
• 1B zeigt eine schematische Querschnittsansicht eines oberflächenemittierenden Halbleiterlasers mit einer Membran.
• 1C veranschaulicht Komponenten einer Detektorvorrichtung.
• 2 zeigt eine Ansicht eines elektroakustischen Wandlers gemäß weiteren Ausführungsformen.
• 3 zeigt eine schematische Ansicht einer elektronischen Vorrichtung gemäß Ausführungsformen.
• 4A fasst ein Verfahren gemäß Ausführungsformen zusammen.
• 4B fasst ein weiteres Verfahren gemäß Ausführungsformen zusammen.

The accompanying drawings serve to understand exemplary embodiments of the invention. The drawings illustrate exemplary embodiments and, together with the description, serve to explain them. Further exemplary embodiments and numerous of the intended advantages result directly from the following detailed description. The elements and structures shown in the drawings are not necessarily drawn to scale with each other. The same reference numbers refer to the same or corresponding elements and structures.

• 1A shows a schematic view of an electroacoustic transducer according to embodiments.
• 1B shows a schematic cross-sectional view of a surface-emitting semiconductor laser with a membrane.
• 1C illustrates components of a detector device.
• 2 shows a view of an electroacoustic transducer according to further embodiments.
• 3 shows a schematic view of an electronic device according to embodiments.
• 4A summarizes a method according to embodiments.
• 4B summarizes another method according to embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure and in which specific embodiments are shown for illustrative purposes. In this context, directional terminology such as "top", "bottom", "front", "back", "over", "on", "in front", "behind", "front", "behind", etc. is applied to the Orientation of the figures just described is related. Because the components of the embodiments may be positioned in different orientations, the directional terminology is for illustrative purposes only and is not limiting in any way.

The description of the exemplary embodiments is not limiting, since other exemplary embodiments also exist and structural or logical changes can be made without departing from the scope defined by the claims. In particular, elements of exemplary embodiments described below can be combined with elements of other of the exemplary embodiments described, unless the context states otherwise.

The terms “wafer” or “semiconductor substrate” used in the following description may include any semiconductor-based structure that has a semiconductor surface. Wafer and structure are understood to include doped and undoped semiconductors, epitaxial semiconductor layers, optionally supported by a base support, and other semiconductor structures. For example, a layer made of a first semiconductor material can be grown on a growth substrate made of a second semiconductor material, for example a GaAs substrate, a GaN substrate or a Si substrate, or of an insulating material, for example on a sapphire substrate.

Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, through which, for example, ultraviolet, blue or longer-wave light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds, through which, for example, green or longer wavelength light can be generated, such as GaAsP, Al-GaInP, GaP, AlGaP, as well as other semiconductor materials such as GaAs, Al-GaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2O3, diamond, hexagonal BN and combinations of the materials mentioned . The stoichiometric ratio of the compound semiconductor materials can vary. Other examples of semiconductor materials may include silicon, silicon-germanium and germanium. In the context of this description, the term “semiconductor” also includes organic semiconductor materials.

The term “substrate” generally includes insulating, conductive or semiconductor substrates.

The terms “lateral” and “horizontal” as used in this specification are intended to describe an orientation or alignment that is substantially parallel to a major surface of a substrate or semiconductor body. This can be, for example, the surface of a wafer or a chip (die).

The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when growing layers.

The term "vertical" as used in this specification is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can, for example, correspond to a growth direction when growing layers.

1A shows a schematic view of an electroacoustic transducer 10 according to embodiments. The electroacoustic transducer 10 includes a vertical cavity surface emitting semiconductor laser 150 (VCSEL, “Vertical Cavity Surface Emitting Laser”) with an active zone (not shown in 1A) for emitting electromagnetic radiation, a first resonator mirror 120 and a second resonator mirror. The electroacoustic transducer 10 further comprises a membrane 135 that can be deflected by a sound wave field and on which the first resonator mirror 120 is arranged. The electroacoustic transducer further comprises a detector device 152, which is suitable for detecting the electromagnetic radiation emitted by the surface-emitting semiconductor laser 150.

Details of the surface emitting semiconductor laser 150 will be discussed later with reference to 1B be explained. The detector device can, for example, have a plurality of wave-selective beam splitters 153 ₁ ... 153 _n and respective associated detector elements 155 ₁ , ... 155 _n . In this way, it is possible to split a signal, which has electromagnetic radiation with different wavelengths and different intensities, into wavelengths. The corresponding partial beams 156 ₁ , ... 156 _n can then be detected by the associated detector elements 155 ₁ , ... 155 _n . As a result, it is possible to detect a signal that carries the sound field information. The signal reflects the intensity of the emitted electromagnetic radiation depending on the wavelength and time. Components of the wavelength-selective beam splitters 153 ₁ , ... 153 _n and the associated detector elements 155 ₁ , ..., 155 _n are described with reference to 1C be explained.

1B shows a surface emitting semiconductor laser 150, which is a component of the electroacoustic transducer 10, which is shown in 1A is shown. The surface-emitting semiconductor laser 150 has a first resonator mirror 120, a second resonator mirror 130 and an active zone 133 for emitting electromagnetic radiation. An optical resonator 125 is formed between the first and second resonator mirrors 120, 130. For example, the second resonator mirror 130 may be formed over a laser substrate 100. The laser substrate 100 may be a growth substrate for growing the layers of the surface-emitting semiconductor laser 150. However, according to further embodiments, the laser substrate 100 can also be applied after the layers of the surface-emitting semiconductor laser 150 have grown. The laser substrate 100 may be transparent to the radiation emitted by the surface-emitting half laser 150. The second resonator mirror 130 has a lower reflectivity than the first resonator mirror 120 and therefore serves as an output mirror. The first and second resonator mirrors 120, 130 can be implemented, for example, as a dielectric mirror or DBR mirror (“distributed Bragg reflector”).

In general, the term “dielectric mirror” includes any arrangement that reflects incident electromagnetic radiation to a high degree (e.g. >90%) and is non-conductive. For example, a dielectric mirror layer can be formed by a sequence of very thin dielectric layers, each with different refractive indices. For example, the layers can alternately have a high refractive index (for example n>1.7) and a low refractive index (for example n<1.7) and can be designed as a Bragg reflector. For example, the layer thickness can be λ/4, where λ indicates the wavelength of the light to be reflected in the respective medium. The layer seen from the incident light can have a larger layer thickness, for example 3λ/4. Due to the small layer thickness and the difference in the respective refractive indices, the dielectric mirror layer provides high reflectivity and is at the same time non-conductive. The dielectric mirror layer is therefore suitable for isolating components of the semiconductor component from one another. A dielectric mirror layer can have, for example, 2 to 50 dielectric layers. A typical layer thickness of the individual layers can be approximately 30 to 90 nm, for example approximately 50 nm. The layer stack can further contain one or two or more layers that are thicker than about 180 nm, for example thicker than 200 nm.

According to further embodiments, the first and/or the second resonator mirror may have semiconductor layers.

The first resonator mirror 120 is attached to a membrane 135. For example, the first resonator mirror 120 can be arranged on a side of the membrane 135 facing away from the active zone 133. In this way, the arrangement of surface-emitting semiconductor laser and membrane 135 can be produced particularly easily. According to embodiments, the arrangement of the first resonator mirror 120 and membrane 135 can be provided by a housing 127 from the active zone 133 be spaced apart. The optical resonator 125 may have an air gap 124 as a result.

According to further embodiments, the first resonator mirror 120 can also be arranged on a side of the membrane 135 facing the active zone 133.

The active zone 133 can, for example, have a pn junction, a double heterostructure, a single quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation. The term “quantum well structure” has no meaning with regard to the dimensionality of the quantization. It therefore includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers.

The surface-emitting semiconductor laser can be based on any material system, for example on the GaAs/AlGaAs material system, the phosphide or the nitride material system. For example, a suitable sound wave-transparent mechanical protective element can be arranged above the first resonator mirror 120.

The surface-emitting semiconductor laser 150 further comprises a first semiconductor layer 110 of a first conductivity type, for example p-type, and a second semiconductor layer 115 of a second conductivity type, for example n-type. The first semiconductor layer 110 and the second semiconductor layer are disposed in electrical contact with the active region 133, with the active region 133 disposed between the first and second semiconductor layers. A first contact element 139 is electrically connected to the first semiconductor layer 110, for example. A second contact element 141 is electrically connected to the second semiconductor layer 115, for example. The second semiconductor layer 115 and the second contact element 141 can be arranged, for example, on a side of the second resonator mirror 130 facing the active zone 133. The second contact element 141 can be connected via a contact opening in the semiconductor layer arrangement to a wiring level 143, which is arranged on the side of the second resonator mirror 130 facing away from the active zone 133.

If a suitable electrical voltage is applied to the first contact element 139, for example via the first connection 140, and to the second contact element 141, for example via the second connection 142, electromagnetic radiation is generated in the zone 133. The current impressed into the active zone can be limited by the aperture 137.

A membrane 135, which can be deflected by an incident sound wave field 105, is applied, for example, over the housing 127 in such a way that it vibrates when a sound wave field is applied and thus changes the resonator length of the resonator 125. The resonator length determines the wavelength emitted by the surface-emitting semiconductor laser. Accordingly, time-modulated electromagnetic radiation is generated by the sound wave field.

The second contact element 141 has, for example, an opening through which the electromagnetic radiation can be coupled into the underlying waveguide 149. For example, the waveguide 149 may be formed over a waveguide substrate 147 and connected to the laser substrate 100 via a connection layer 145. For example, the waveguide 149 may be formed in an SOI (“Silicon-on-Insulator”) substrate. Correspondingly, the layer in which the waveguide 149 is formed is mechanically connected to the underlying waveguide substrate 147 via an insulator layer 151. For example, the connection layer 145 can adjoin side walls of the waveguide and thus represent a cladding layer. According to further embodiments, the area that adjoins the side walls of the waveguide 149 can also be a cavity, so that optical guidance results. The material of the waveguide can be any suitable waveguide material and can include, for example, other semiconductor materials, for example III-V semiconductors. Accordingly, the waveguide substrate 147 can also be designed in any other way.

The membrane 135 can be constructed in such a way that it can be deflected by a sound wave field.

For example, a material of the membrane 135 may include AlN, SiN or a combination of these materials. For example, a layer thickness of the membrane can be smaller than an emission wavelength of the emitted electromagnetic radiation. An air gap 124 can be arranged between the membrane 135 and the underlying semiconductor material, for example the active zone 133.

The length of the air gap 124 can be adjusted according to the optical properties to be achieved.

For example, the membrane 135 may be fabricated using a suitable sacrificial layer that is etched after the layers for the membrane are formed. An example of a method for producing a suitable membrane ran is in, for example GD Cole “Short-Wavelength MEMS-Tunable VCSELs,” Optics Express 16103, 29 September 2008, Vol. 16, No. 20 described. Further methods for producing suitable membranes or correspondingly suspended mirrors are, for example, in Connie J. Chang-Hasnain “Tunable VCSEL” IEEE Journal on Selected Topics in Quantum Electronics, Vol. 6, No. 6, November/December 2000 and DD John et al., “White Band Electrically-Pumped 1050 nm MEMS-Tunable VCSELs for Ophthalmia Imaging,” J. Lightwave Technol. 2015, August 15, 33(16): 3461-3468 described. According to further embodiments, the first resonator mirror can also be integrated into the membrane. This means that the deflectable membrane itself forms part of the first resonator mirror.

1C illustrates components of the detector device 152. In general, any detector device that is suitable for determining the intensity of electromagnetic radiation as a function of wavelength and time can be used. For example, the detector device 152 can have a plurality of wave-selective beam splitters 153 ₁ , ... 153 _n . Accordingly, a signal which, for example, has a plurality of partial beams 156 ₁ ,... 156 _n each with different wavelengths λ ₁ , ... λ _n can be split by the wavelength-selective beam splitters 153 so that partial beams 156 ₁ ,... 156 _n , each with a different wavelength, is guided to an associated detector element 155 ₁ , ... 155 _n . For example, each of the detector elements 155 may have a first semiconductor layer 161 of a first conductivity type, a second semiconductor layer 152 of a second conductivity type and an active zone 163. For example, the active zone 163 may have the same layers as the active zone 133 of the surface-emitting semiconductor laser. In this way, a high sensitivity to the wavelength to be detected is ensured. According to embodiments, components of the detector device 152 may be implemented as a photonic circuit.

When electromagnetic radiation is incident, an electrical signal can be generated in the respective detector element 155 ₁ ,... 155 _n , which can be detected via the associated measuring device 166. The associated signal can then be fed to a processing device 170, where a signal that reproduces the sound field information is determined from the output signals of the individual detector elements 155 ₁ ,... 155 _n . For example, the detector elements 155 ₁ , ... 155 _n can each be designed identically.

The wavelength-selective beam splitters 153 ₁ , ... 153 _n can be designed in any way and, for example, passive wavelength-selective beam splitters such as Mach-Zehnder interferometers, dielectric interference thin-film filters, waveguide grating routers, passive ring filters or micro-ring resonators and others, as they are generally known , include.

The number of wavelength-selective beam splitters 153 ₁ , ... 153 _n and detector elements 155 ₁ , ... 155 _n to be used is determined based on the resolution to be achieved. The range of wavelengths to be detected is determined by the tuning range of the VCSEL used. Each specific laser wavelength corresponds to a unique intensity profile on the individual detector elements 155 ₁ , ... 155 _n .

The electroacoustic transducer described is therefore based on a transducer concept in which the length of the optical resonator of a laser and thus the emission wavelength of the laser is modulated by an incident sound field. Since there are proven concepts for measuring intensity as a function of wavelength, the electroacoustic transducer has improved properties compared to conventional concepts. The electroacoustic transducer can be expected to have a high signal-to-noise ratio (SNR) and is characterized by greater mechanical robustness. In particular, there is no open resonator, but the transducer can be protected mechanically, for example by a grid. There is a large selection of possible material systems, in particular III-V semiconductor materials can be used. The electroacoustic transducer is not influenced at all or only to a small extent by electromagnetic interference. The electroacoustic transducer described can be easily scaled and modularized.

By combining differently designed and differently sensitive elements, it is possible to obtain an even larger dynamic or sensitivity range. This is explained in more detail below.

2 shows an electroacoustic transducer according to further embodiments. As in 2 shown, the electroacoustic transducer has a plurality of surface-emitting semiconductor lasers 150 ₁ , ... 150 ₄ as well as a plurality of membranes 135 ₁ , ... 135 ₄ . For example, the response properties of the respective membranes can be optimized for different sound pressures. In this way the sensitivity and/or the dynamic range can be extended. The membranes 135 ₁ , ... 135 ₄ can each have different sizes. The response properties of the membranes 135 ₁ , ... 135 ₄ can also be adapted to different sound pressures in other ways be optimized differently. For example, they can each have a different thickness or a different coefficient of elasticity.

The components of the respective surface-emitting semiconductor lasers 150 ₁ , ... 150 ₄ may be identical. The waveguides that guide electromagnetic radiation emitted from the respective surface-emitting semiconductor lasers 150 to the detector device 152 may be as shown in 2 shown to be connected to each other. For example, a common detector device 152 may be provided for the plurality of surface-emitting semiconductor lasers 150. For example, the individual surface-emitting semiconductor lasers can be operated and read out sequentially. In this way, the sensitivity and/or the dynamic range can be expanded in a small installation space.

3 shows an example of an electronic device 20. The electronic device has the electroacoustic transducer 10 described above. The electronic device 20 may be, for example, any electronic device that includes a microphone. Examples include, but are not limited to, telephones, smartphones, general consumer electronic devices, headphones with integrated microphones, computers, wearable electronic devices such as smart watches, fitness bracelets, digital glasses, and others.

4A summarizes a method for detecting sound waves. A method for detecting sound waves includes feeding (S100) the sound waves to a laser device whose resonator length can be changed by the action of sound waves. The method further includes determining (S110) an intensity of electromagnetic radiation emitted by the laser device as a function of wavelength and time. According to embodiments, determining the intensity may include dividing (S120) the emitted electromagnetic radiation into partial beams 156 ₁ ,...156 _n each with different wavelengths and detecting an intensity of the respective partial beams 156 ₁ ,...156 _n .

4B summarizes a method for converting sound waves into electrical signals. A method for converting sound waves into electrical signals includes feeding (S100) the sound waves to a laser device whose resonator length can be changed by the action of sound waves. The method further includes generating (S130) electrical signals from electromagnetic radiation emitted by the laser device. The method can further comprise dividing (S120) the emitted electromagnetic radiation into partial beams 156 ₁ ,...156 _n each with different wavelengths and detecting an intensity of the respective partial beams 156 ₁ ,...156 _n . For example, the splitting (S120) of the emitted electromagnetic radiation can be carried out before generating (S130) electrical signals.

Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that the specific embodiments shown and described may be replaced by a variety of alternative and/or equivalent embodiments without departing from the scope of the invention. The application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

REFERENCE SYMBOL LIST

10

electroacoustic transducer

20

electronic device

100

Laser substrate

105

Sound wave field

110

first semiconductor layer

115

second semiconductor layer

120

first resonator mirror

124

air gap

125

optical resonator

127

Housing

130

second resonator mirror

133

active zone

135, 1351, 1352, 1353, 1354

membrane

137

aperture

139

first contact element

140

first connection

141

second contact element

142

second connection

143

Wiring level

145

Connection layer

147

Waveguide substrate

149

waveguide

150, 1501, 1502, 1503, 1504

surface emitting semiconductor laser

151

insulator layer

152

Detector device

1531, ...153n

wavelength-selective beam splitter

1551, ...155n

Detector element

1561, ...156n

Partial beam

161

first semiconductor layer

162

second semiconductor layer

163

active zone

166, ...166n

Measuring device

170

Processing facility

QUOTES INCLUDED IN THE DESCRIPTION

This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Non-patent literature cited

• G. D. Cole “Short-Wavelength MEMS-Tunable VCSELs”, Optics Express 16103, 29 [0044]
• D. D. John et al., “White Band Electrically-Pumped 1050 nm MEMS-Tunable VCSELs for Ophthalmia Imaging,” J. Lightwave Technol. 2015, August 15, 33(16): 3461-3468 [0044]

Claims (15)

Electroacoustic transducer (10) with: a surface-emitting semiconductor laser (150, 150 ₁ ,...150 ₄ ) with a vertical resonator (125), an active zone (133) for emitting electromagnetic radiation, a first and a second resonator mirror (120, 130), a membrane (135, 135 ₁ ,... 135 ₄ ) which can be deflected by a sound wave field (105) and on which the first resonator mirror (120) is arranged, and a detector device (152) which is suitable for use by the to detect electromagnetic radiation emitted by surface-emitting semiconductor lasers (150, 150 ₁ ,...150 ₄ ). Electroacoustic transducer (10) according to Claim 1 , wherein the first resonator mirror (120) is arranged on a side of the membrane (135, 135 ₁ ,... 135 ₄ ) facing away from the active zone (133). Electroacoustic transducer (10) according to Claim 1 or 2 , wherein the second resonator mirror (130) is suitable for at least partially coupling out the emitted electromagnetic radiation. Electroacoustic transducer (10) according to Claim 3 , further with a waveguide (149) which is suitable for guiding the emitted electromagnetic radiation to the detector device (152). Electroacoustic transducer (10) according to Claim 4 , wherein the surface-emitting semiconductor laser (150, 150 ₁ ,...150 ₄ ) with a vertical resonator (125) is arranged above a laser substrate (100) and the waveguide (149) is arranged above a waveguide substrate (147) and the laser substrate (100 ) and the waveguide substrate (147) are arranged one above the other. Electroacoustic transducer (10) according to one of the preceding claims, wherein the detector device (152) has a plurality of wavelength-selective beam splitters (153 ₁ , ...153 _n ) and respective associated detector elements (155 ₁ , ...155 _n ). Electroacoustic transducer (10) according to Claim 6 , wherein at least one of the detector elements (155 ₁ , ... 155 _n ) has an active zone (163) which contains components of the active zone (133) of the surface-emitting semiconductor laser (150, 150 ₁ , ... 150 ₄ ). Electroacoustic transducer (10) according to one of the preceding claims, which has a plurality of surface-emitting semiconductor lasers (150, 150 ₁ ,... 150 ₄ ) and a plurality of membranes (135, 135 ₁ ,... 135 ₄ ), wherein the Detector device (152) is suitable for detecting electromagnetic radiation emitted by the plurality of surface-emitting semiconductor lasers (150, 150 ₁ ,...150 ₄ ). Electroacoustic transducer (10) according to Claim 8 , where at least two of the membranes (135, 135 ₁ ,... 135 ₄ ) have a different size. Electronic device (20) comprising the electroacoustic transducer (10) according to any one of the preceding claims. Electronic device (20) according to Claim 10 , which is selected from a telephone, a smartphone, a consumer electronic device, a headphone with a built-in microphone, a computer and a portable electronic device. Method for detecting sound waves, comprising: supplying (S100) the sound waves to a laser device (150, 150 ₁ ,...150 ₄ ), the resonator length of which can be changed by the action of sound waves; and determining (S110) an intensity of electromagnetic radiation emitted by the laser device (150, 150 ₁ ,...150 ₄ ) as a function of wavelength and time. Method for converting sound waves into electrical signals, comprising: supplying (S100) the sound waves to a laser device (150, 150 ₁ ,...150 ₄ ), the resonator length of which can be changed by the action of sound waves; and generating (S120) electrical signals from electromagnetic radiation emitted by the laser device (150, 150 ₁ ,...150 ₄ ). Procedure according to one of the Claims 12 or 13 , further comprising dividing (S120) the emitted electromagnetic radiation into partial beams (156 ₁ ,...156 _n ) each with different wavelengths and detecting an intensity of the respective partial beams 156 ₁ ,...15 6 _n . Procedure according to one of the Claims 12 until 14 , wherein the laser device (150, 150 ₁ ,...150 ₄ ) comprises a semiconductor laser with two resonator mirrors (120, 130), one of the resonator mirrors (120, 130) being attached to a membrane 135 that can be deflected by a sound field.

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