DE102022000838A1 - System for producing at least one thinnest layer - Google Patents
System for producing at least one thinnest layer Download PDFInfo
- Publication number
- DE102022000838A1 DE102022000838A1 DE102022000838.6A DE102022000838A DE102022000838A1 DE 102022000838 A1 DE102022000838 A1 DE 102022000838A1 DE 102022000838 A DE102022000838 A DE 102022000838A DE 102022000838 A1 DE102022000838 A1 DE 102022000838A1
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- plasma
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- 239000000758 substrate Substances 0.000 claims abstract description 104
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 23
- 229910021389 graphene Inorganic materials 0.000 abstract description 18
- 239000007789 gas Substances 0.000 description 46
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
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- 238000006243 chemical reaction Methods 0.000 description 4
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
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- 239000001294 propane Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000264877 Hippospongia communis Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
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- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- 239000010951 brass Substances 0.000 description 1
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
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- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021428 silicene Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
Abstract
Die Erfindung betrifft eine Anlage zum Herstellen von wenigstens einer dünnsten Schicht, wobei die dünnste Schicht aus einer Gasphase auf einem Substrat abscheidend ausgebildet ist. Der Erfindung liegt die Aufgabe zugrunde, eine Anlage bereitzustellen, mit der dünnste Schichten, etwa Graphen, höchst effizient zu fertigen sind. Diese Aufgabe ist mit einer Anlage der genannten Art durch das im Kennzeichen des Patentanspruchs 1 genannte Merkmal gelöst. Nach der Erfindung ist also vorgesehen, dass das Substrat benachbart zu wenigstens einer rotierbar gelagerten Rolle angeordnet ist.The invention relates to a system for producing at least one thinnest layer, the thinnest layer being formed from a gas phase deposited on a substrate. The invention is based on the object of providing a system with which the thinnest layers, such as graphene, can be manufactured very efficiently. This task is solved with a system of the type mentioned by the feature mentioned in the characterizing part of patent claim 1. According to the invention it is therefore provided that the substrate is arranged adjacent to at least one rotatably mounted roller.
Description
Die Erfindung betrifft eine Anlage zum Herstellen von wenigstens einer dünnsten Schicht, wobei die dünnste Schicht aus einer Gasphase auf einem Substrat abscheidend ausgebildet ist.The invention relates to a system for producing at least one thinnest layer, the thinnest layer being formed from a gas phase deposited on a substrate.
Die dünnste Schicht kann beispielsweise aus Graphen bestehen. Graphen ist eine allotrope Form von Kohlenstoff, welche aus einer zweidimensionalen Schicht von Kohlenstoffatomen besteht, welche in einem hexagonalen Gitter angeordnet sind, ähnlich Bienenwaben. Graphen wird zunehmend als Halbleitermaterial genutzt und weist einzigartige optische, thermische und elektrische Eigenschaften auf. Graphen kann beispielsweise durch mechanische Exfolation, chemische Abblätterung mithilfe organischer Lösungsmittel oder chemische Gasphasenabscheidung hergestellt werden. Ideales Graphen weist nur eine Atomlage Kohlenstoff auf, man sprich aber auch bei einer dünnen Graphenschicht von zwei bis zehn Atomlagen noch von Graphen. Alternativ kann die dünnste Schicht aber auch jedes andere Material sein, welches sich durch chemische Gasphasenabscheidung auf einem Substrat bilden lässt, beispielsweise Silicen oder andere Materialien aus Atomen in einem hexagonalen Gitter, etwa aus Bor und Stickstoff oder Bor, Stickstoff und Silicium.The thinnest layer can consist of graphene, for example. Graphene is an allotropic form of carbon, which consists of a two-dimensional layer of carbon atoms arranged in a hexagonal lattice, similar to honeycombs. Graphene is increasingly being used as a semiconductor material and has unique optical, thermal and electrical properties. For example, graphene can be produced by mechanical exfoliation, chemical exfoliation using organic solvents, or chemical vapor deposition. Ideal graphene only has one atomic layer of carbon, but even a thin layer of graphene with two to ten atomic layers is still referred to as graphene. Alternatively, the thinnest layer can also be any other material that can be formed on a substrate by chemical vapor deposition, for example silicene or other materials made of atoms in a hexagonal lattice, for example boron and nitrogen or boron, nitrogen and silicon.
Eine Anlage eingangs genannter Art ist beispielsweise aus der
Nach der
Der Erfindung liegt die Aufgabe zugrunde, eine Anlage bereitzustellen, mit der dünnste Schichten, etwa Graphen, höchst effizient zu fertigen sind.The invention is based on the object of providing a system with which the thinnest layers, such as graphene, can be manufactured very efficiently.
Diese Aufgabe ist mit einer Anlage der genannten Art durch das im Kennzeichen des Patentanspruchs 1 genannte Merkmal gelöst.This task is solved with a system of the type mentioned by the feature mentioned in the characterizing part of
Nach der Erfindung ist also vorgesehen, dass das Substrat benachbart zu wenigstens einer rotierbar gelagerten Rolle angeordnet ist. Die Rolle ist dabei derart zum Substrat positioniert, dass die Rolle das Substrat nicht berührt, sondern beabstandet zum Substrat angeordnet ist. Die Rolle ist dabei rotierbar gelagert, kann sich also drehen. Vorteilhaft ist hierbei, wenn die Rolle derart drehbar ist, dass eine Mittelachse der Rolle parallel zum Substrat orientiert ist und der Abstand der Mittelachse der Rolle zum Substrat bei einer Drehung konstant bleibt.According to the invention it is therefore provided that the substrate is arranged adjacent to at least one rotatably mounted roller. The roller is positioned relative to the substrate in such a way that the roller does not touch the substrate, but is arranged at a distance from the substrate. The roller is mounted so that it can rotate, so it can rotate. It is advantageous here if the roller is rotatable in such a way that a central axis of the roller is oriented parallel to the substrate and the distance of the central axis of the roller to the substrate remains constant during rotation.
Besonders vorteilhaft ist die Rolle mit einem elektrischen Potenzial zur Ausbildung eines Plasmas beaufschlagbar ausgebildet. Das heißt, in einer erfindungsgemäßen Anlage wird das Plasma bevorzugt durch ein hohes elektrisches Potenzial gebildet und nicht durch angelegte Mikrowellen, Radiofrequenz oder induktive Kopplung. Alternativ kann eine erfindungsgemäße Anlage aber auch so, ausgestaltet werden, dass das Plasma durch einen Mikrowellenerzeuger zur Bildung eines MW-Plasmas oder durch einen Radiofrequenzerzeuger zur Bildung eines RF-Plasmas oder durch eine Spule zur Bildung eines induktiv gekoppelten Plasmas bzw. ICP erzeugt wird.The role is particularly advantageously designed to be subjected to an electrical potential to form a plasma. This means that in a system according to the invention, the plasma is preferably formed by a high electrical potential and not by applied microwaves, radio frequency or inductive coupling. Alternatively, a system according to the invention can also be designed in such a way that the plasma is generated by a microwave generator to form a MW plasma or by a radio frequency generator to form an RF plasma or by a coil to form an inductively coupled plasma or ICP.
Besonders vorteilhaft sind wenigstens zwei Rollen vorgesehen, welche derart angeordnet sind, dass das Substrat mittig zwischen den Rollen positioniert ist. Auch hierbei sind die Rollen so angeordnet, dass sie das Substrat - auch bei Drehung - nicht berühren. In diesem Fall können beide Rollen mit einem elektrischen Potenzial zur Bildung eines Plasmas beaufschlagt werden, und zwar eine Rolle als Anode und eine Rolle als Kathode, wenn an die Rollen Gleichspannung angelegt wird. Alternativ kann an die beiden Rollen auch Wechselspannung angelegt werden, wobei auch hier die beiden Rollen jeweils als Gegenpol geschaltet werden können. Diese Anordnung empfiehlt sich insbesondere, wenn das Substrat bandförmig ist. Dann können die Rollen, welche idealisiert als Zylinder vorstellbar sind, mit einer Umfangseite parallel benachbart zu einer flächigen Oberfläche des band- oder folienförmigen Substrats angeordnet sein.Particularly advantageously, at least two rollers are provided, which are arranged in such a way that the substrate is positioned centrally between the rollers. Here too, the rollers are arranged so that they do not touch the substrate - even when rotating. In this case, both rollers can be subjected to an electrical potential to form a plasma, namely one role as an anode and one role as cathode, when DC voltage is applied to the rollers. Alternatively, alternating voltage can also be applied to the two rollers, whereby the two rollers can also be switched as opposite poles. This arrangement is particularly recommended if the substrate is band-shaped. Then the rollers, which can ideally be imagined as cylinders, can have one circumferential side parallel to each other be arranged on a flat surface of the band- or film-shaped substrate.
Alternativ kann aber auch nur eine Rolle vorhanden sein, welche erfindungsgemäß aber ebenfalls mit einem elektrischen Potenzial, entweder mit Gleichspannung oder Wechselspannung, beaufschlagbar ist. Als Gegenpol kann in diesem Fall beispielsweise ein Gehäuse der Anlage dienen. Andererseits kann in der Anlage auch ein Blech vorgesehen sein, welches als Gegenpol zu der Rolle mit elektrischem Potenzial beaufschlagbar ist.Alternatively, only one roller can be present, which according to the invention can also be subjected to an electrical potential, either direct voltage or alternating voltage. In this case, a housing of the system, for example, can serve as a counterpoint. On the other hand, a sheet metal can also be provided in the system, which can be subjected to electrical potential as a counterpole to the roller.
Bei einem bandförmigen Substrat ist es vorteilhaft, wenn die Rolle bzw. die Rollen als Zylinder geformt sind, wobei eine Grundfläche des Zylinders senkrecht zum Substrat orientiert ist und eine Mittelachse des Zylinders parallel zu dem Substrat angeordnet ist. Hierbei ist vorteilhaft, dass wenn eine Höhe des Zylinders mindestens der Breite des Substrats entspricht. Somit ist die Rolle wenigstens genau so breit wie das Substrat, idealerweise ist die Rolle sogar breiter als das Substrat. Dies führt dazu, dass das Plasma über die gesamte Breite des Substrats gebildet wird, idealerweise sogar darüber hinaus.In the case of a band-shaped substrate, it is advantageous if the roller or rollers are shaped as a cylinder, with a base surface of the cylinder being oriented perpendicular to the substrate and a central axis of the cylinder being arranged parallel to the substrate. It is advantageous here if a height of the cylinder corresponds at least to the width of the substrate. The roll is therefore at least as wide as the substrate, ideally the roll is even wider than the substrate. This results in the plasma being formed across the entire width of the substrate, ideally even beyond it.
Als bandförmiges Substrat kann beispielsweise eine Metallfolie, z.B. aus Aluminium, Chrom, Gold, Palladium, Rhodium, Vanadium oder einem anderen Metall, dienen. Alternativ kann das Substrat aber auch eine Kunststofffolie, z.B. aus Polyethylen, Polypropylen oder einem anderen Polymer, sein. Ebenfalls ist denkbar, dass das Substrat durch einen Flüssigkeitsfilm gebildet wird, der beispielsweise durch Fäden oder Drähte begrenzt wird. Ebenfalls ist denkbar, das Substrat nur initial zur Unterstützung einer Abscheidung einzusetzen, sodass nach einem Anfahren eines Abscheidungsprozesses die sich bildende dünnste Schicht fortan selbst das weitere Substrat bildet. Es ist außerdem denkbar, dass das Substrat Impfstrukturen für den Abscheidungsprozess enthält.A metal foil, for example made of aluminum, chromium, gold, palladium, rhodium, vanadium or another metal, can serve as the band-shaped substrate. Alternatively, the substrate can also be a plastic film, for example made of polyethylene, polypropylene or another polymer. It is also conceivable that the substrate is formed by a liquid film, which is delimited, for example, by threads or wires. It is also conceivable to use the substrate only initially to support a deposition, so that after starting a deposition process, the thinnest layer that forms from then on itself forms the further substrate. It is also conceivable that the substrate contains seed structures for the deposition process.
Außerdem ist auch vorstellbar, dass das Substrat draht- bzw. fadenförmig ausgebildet ist. In diesem Fall ist es vorstellbar, dass mehr als 2 Rollen, beispielsweise 3 oder 4 oder 5 Rollen, um das drahtförmige Substrat anzuordnen. Auch in diesem Fall können die Rollen als Zylinder ausgebildet sein, deren Grundfläche senkrecht zum Substrat orientiert ist. Je nach Anzahl der Rollen gibt es verschiedene Möglichkeiten, eine, mehrere oder alle der Rollen mit elektrischem Potenzial zu beaufschlagen. Zum Beispiel kann eine Spannungsquelle mit mehr als zwei Phasen verwendet werden und jeder Rolle wird eine Phase der Spannungsquelle zugeordnet. Beispielsweise kann dreiphasiger Drehstrom verwendet werden und bei drei Rollen um ein drahtförmiges Substrat kann an jede Rolle eine andere Phase verschaltet werden, wobei die Phasen jeweils um 120° versetzt zueinander sind. Für den Fachmann sind noch zahlreiche weitere Möglichkeiten offensichtlich umsetzbar, welche hier nicht alle einzeln aufgeführt werden müssen.It is also conceivable that the substrate is designed in the form of a wire or thread. In this case, it is conceivable that more than 2 rollers, for example 3 or 4 or 5 rollers, to arrange the wire-shaped substrate. In this case too, the rollers can be designed as cylinders, the base of which is oriented perpendicular to the substrate. Depending on the number of rollers, there are different options for applying electrical potential to one, several or all of the rollers. For example, a voltage source with more than two phases can be used and each role is assigned a phase of the voltage source. For example, three-phase three-phase current can be used and with three rolls around a wire-shaped substrate, a different phase can be connected to each roll, with the phases being offset from one another by 120°. There are numerous other options that can obviously be implemented by a person skilled in the art, not all of which need to be listed individually here.
Es hat sich außerdem als vorteilhaft herausgestellt, wenn die Rolle Erhebungen und/oder Einkerbungen aufweist. Somit ist eine Oberfläche der Umfangseite der Rolle nicht glatt ausgeführt, sondern weist berg- und/oder talartige Strukturen auf. Diese helfen gemeinsam mit einer Rotation der Rolle um die parallel zum Substrat angeordnete Mittelachse dabei, reaktionsfreudige Bestandteile des Plasmas zum Substrat hinzubefördern, in der Wirkung ähnlich einem Schaufelrad.It has also proven to be advantageous if the roller has elevations and/or notches. A surface of the peripheral side of the roller is therefore not smooth, but has mountain and/or valley-like structures. These, together with a rotation of the roller around the central axis arranged parallel to the substrate, help to transport reactive components of the plasma to the substrate, with the effect being similar to a paddle wheel.
Als vorteilhaft hat sich herausgestellt, wenn wenigstens ein Gaseinlass benachbart zu der Rolle auf einer dem Substrat gegenüberliegend Seite angeordnet ist. Somit kann ein Gas, welches für eine Abscheidung auf dem Substrat benötigt wird, neben der Rolle eingeleitet werden und kann diese umströmen, um in der Nähe der Rolle zu einem Plasma angeregt zu werden und anschließend in Form eines Plasmas auf das Substrat treffen.It has proven to be advantageous if at least one gas inlet is arranged adjacent to the roller on a side opposite the substrate. A gas, which is required for a deposition on the substrate, can therefore be introduced next to the roller and can flow around it in order to be excited into a plasma in the vicinity of the roller and then hit the substrate in the form of a plasma.
Bevorzugt ist wenigstens ein Gasauslass benachbart zu der Rolle und benachbart zum Substrat angeordnet. Damit strömt das Gas, nachdem es das Substrat passiert hat, direkt zum Gasauslass. Gaseinlass und Gasauslass sind also so angeordnet, dass das Gas nach Möglichkeit nur zum Substrat geleitet wird und anschließend direkt abgepumpt bzw. aus der Anlage heraus geleitet werden kann.Preferably, at least one gas outlet is arranged adjacent to the roller and adjacent to the substrate. This means that after the gas has passed through the substrate, it flows directly to the gas outlet. The gas inlet and gas outlet are arranged in such a way that, if possible, the gas is only directed to the substrate and can then be pumped out directly or led out of the system.
Gemäß einer vorteilhaften Weiterbildung der Erfindung ist benachbart zu der Rolle wenigstens eine Ebene vorhanden, welche beabstandet zu der Rolle die Rolle gekrümmt ausgehend vom Gaseinlass bis kurz vor das Substrat einen Abstand zum Substrat bildend umschließt. Die Ebene kann beispielsweise aus Blech ausgebildet sein. Die Ebene wirkt somit wie ein Strömungsleitblech, welches das Gas vom Gaseinlass hin zu dem Substrat leitet und begünstigt, dass das Gas nahe der Rolle zu einem Plasma angeregt werden kann. Also bildet sich zwischen der Ebene und der Rolle ein Strömungskanal von dem Gaseinlass bis zum Substrat. Die Ebene verhindert weiterhin, dass das Plasma sich überall in der Anlage ausdehnt und dient somit auch als Schutz beispielsweise des Gehäuses der Anlage vor Plasma und übermäßiger Abscheidung der dünnsten Schicht - beispielsweise Graphen - an Stellen in der Anlage, wo eine Abscheidung unerwünscht ist. Somit begünstigt das Vorhandensein der Ebene eine konzentrierte Schichtbildung auf dem Substrat.According to an advantageous development of the invention, there is at least one plane adjacent to the roller, which, at a distance from the roller, encloses the roller in a curved manner starting from the gas inlet to just before the substrate, forming a distance from the substrate. The plane can be made of sheet metal, for example. The plane thus acts like a flow baffle, which directs the gas from the gas inlet to the substrate and ensures that the gas can be excited into a plasma near the roller. So a flow channel is formed between the plane and the roller from the gas inlet to the substrate. The plane further prevents the plasma from expanding everywhere in the system and thus also serves to protect, for example, the housing of the system from plasma and excessive deposition of the thinnest layer - for example graphene - in places in the system where deposition is undesirable. Thus, the presence of the plane promotes concentrated layer formation on the substrate.
Es hat sich als vorteilhaft herausgestellt, die Ebene elektrisch geerdet auszubilden. Somit kann sich ein Plasma entkoppelt von einem Depositionsort sauber, d.h. ohne Ares, bilden. Somit wird ein elektrischer Lichtbogen durch das Plasma vermieden. Die notwendigen gasförmigen, teilweise ionisierten Moleküle bzw. Ionen können so für die Abscheidung bereits im Vorfeld erzeugt werden, d.h. bevor das Gas bzw. Plasma auf das Substrat trifft. Das Plasma bleibt somit innerhalb eines definierten Bereichs stabil, also im durch die Ebene und die Rolle begrenzten Strömungskanal.It has proven to be advantageous to design the level to be electrically grounded. Thus can A plasma can form cleanly, decoupled from a deposition site, ie without Ares. This avoids an electric arc through the plasma. The necessary gaseous, partially ionized molecules or ions can thus be generated in advance for the deposition, ie before the gas or plasma hits the substrate. The plasma thus remains stable within a defined area, i.e. in the flow channel delimited by the plane and the roller.
Bevorzugt ist eine erste Substratrolle auf einer dem Gaseinlass und dem Gasauslass gegenüberliegenden Seite angeordnet, während eine zweite Substratrolle auf einer gleichen Seite wie der Gaseinlass und der Gasauslass angeordnet ist. Dabei sind die erste Substratrolle zum Abrollen des Substrats und die zweite Substratrolle zum Aufrollen des Substrats ausgebildet. Somit kann das Substrat durch die erste und zweite Substratrolle straff gespannt an der Rolle vorbei befördert werden, wo die Abscheidung stattfindet. Beispielsweise kann sowohl die erste Substratrolle als auch die zweite Substratrolle rotatorisch angetrieben werden. Alternativ kann auch die erste Substratrolle frei drehend gelagert sein und nur die zweite Substratrolle ist rotatorisch angetrieben ausgebildet.Preferably, a first substrate roll is arranged on a side opposite the gas inlet and the gas outlet, while a second substrate roll is arranged on a same side as the gas inlet and the gas outlet. The first substrate roll is designed to unroll the substrate and the second substrate roll is designed to roll up the substrate. Thus, the substrate can be conveyed taut by the first and second substrate rollers past the roller where the deposition takes place. For example, both the first substrate roll and the second substrate roll can be driven in rotation. Alternatively, the first substrate roll can also be mounted to rotate freely and only the second substrate roll is designed to be rotationally driven.
Die erfindungsgemäße Anlage einschließlich seiner vorteilhaften Weiterbildungen gemäß der abhängigen Patentansprüche wird nachfolgend anhand zeichnerischer Darstellungen näher erläutert.The system according to the invention, including its advantageous developments according to the dependent claims, is explained in more detail below using drawings.
Es zeigt:
-
1 schematisch eine erfindungsgemäße Anlage in einem Querschnitt; -
2 schematisch zwei verschiedene Ausführungsformen für die Rolle.
-
1 schematically a system according to the invention in a cross section; -
2 schematically two different embodiments for the role.
In
Eine derartige Anordnung wie in
Auf der gleichen Seite wie die zweite Substratrolle 9 befinden sich - je Rolle - ein Gaseinlass 6 und ein Gasauslass 7. Der Gaseinlass 6 ist dabei jeweils auf der vom Substrat 4 abgewandten Seite der Rolle 5 angeordnet und der Gasauslass 7 ist an der vom Substrat 4 zugewandten Seite der Rolle 5 angeordnet. Somit sind die beiden Gasauslässe 7 benachbart zueinander nahe am Substrat 4 bzw. der zweiten Substratrolle 9 angeordnet.On the same side as the
Weiterhin ist die Ebene 10 ersichtlich, welche sich ausgehend vom Gaseinlass 6 einer Krümmung der Rolle 5 folgende um die Rolle 5 erstreckt bis kurz vor das Substrat 4, einen Abstand zum Substrat 4 bildend. Damit bildet sich zwischen der Ebene 10 und der Rolle 5 vom Gaseinlass 6 bis zum Substrat 4 ein Strömungskanal.Furthermore, the
Die in
Das eingeleitete Gas passiert die wenisgtens eine Rolle 5 und den durch die Rolle 5 und die Ebene 10 gebildeten Strömungskanal. Die Rolle 5 weist dabei ein hohes elektrisches Potenzial auf, wodurch das Gas ein Plasma bildet. Dabei kann eine erste Rolle 5 mit kathodischem Potenzial beaufschlagt sein und eine zweite Rolle 5 mit anodischem Potenzial. Alternativ können die beiden in
Die Rollen 5 gemäß
Erfindungsgemäß dient die wenigstens eine Rolle 5 also sowohl zur Erzeugung des Plasmas als auch zur Beförderung des Plasmas hin zum Substrat 4, insbesondere zu einer Reaktionszone zwischen der Ebene 10 und dem Gasauslass 7. In einem Bereich dieser Reaktionszone findet benachbart zu der wenigstens einen Rolle 5 die Abscheidung der dünnsten Schicht 2 auf dem Substrat 4 statt, beispielsweise von Graphen. Da diese Abscheidung durch ein Plasma unterstützt wird, ist dies eine plasmaunterstützte chemische Gasphasenabscheidung bzw. Plasma-Enhanced Physical Vapor Deposition, PE-CVD.According to the invention, the at least one
In
BezugszeichenlisteReference symbol list
- 11
- AnlageAttachment
- 22
- dünnste Schichtthinnest layer
- 33
- Gasphasegas phase
- 44
- SubstratSubstrate
- 55
- Rollerole
- 5'5'
- Rollerole
- 66
- GaseinlassGas inlet
- 77
- GasauslassGas outlet
- 88th
- erste Substratrollefirst substrate roll
- 99
- zweite Substratrollesecond substrate roll
- 1010
- Ebenelevel
- 1111
- MittelachseCentral axis
- 1212
- Erhebungensurveys
- 1313
- EinkerbungenNotches
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDED IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- WO 2020/187896 A1 [0003]WO 2020/187896 A1 [0003]
- EP 3632846 A1 [0004]EP 3632846 A1 [0004]
Claims (11)
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4863756A (en) | 1985-06-14 | 1989-09-05 | Leybold Aktiengesellschaft | Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma |
DE60304745T2 (en) | 2002-12-18 | 2007-01-25 | Cardinal Cg Co., Eden Prairie | PLASMA-SUPPORTED FILM DECISION |
DE102012209051A1 (en) | 2012-05-30 | 2013-12-05 | Roth & Rau Ag | Receiving a coating material in vacuum coating plants by a cover on a side of a planar substrate, comprises moving the cover such that it permanently receives a part of the coating material non-absorbed by the substrate |
WO2015007653A1 (en) | 2013-07-18 | 2015-01-22 | W & L Coating Systems Gmbh | Plasma-chemical coating apparatus |
EP3632846A1 (en) | 2018-10-01 | 2020-04-08 | Samsung Electronics Co., Ltd. | Method of forming graphene |
WO2020187896A1 (en) | 2019-03-18 | 2020-09-24 | The 280 Company | System and process for manufacturing a graphene layer on a substrate |
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2022
- 2022-03-10 DE DE102022000838.6A patent/DE102022000838A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4863756A (en) | 1985-06-14 | 1989-09-05 | Leybold Aktiengesellschaft | Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma |
DE60304745T2 (en) | 2002-12-18 | 2007-01-25 | Cardinal Cg Co., Eden Prairie | PLASMA-SUPPORTED FILM DECISION |
DE102012209051A1 (en) | 2012-05-30 | 2013-12-05 | Roth & Rau Ag | Receiving a coating material in vacuum coating plants by a cover on a side of a planar substrate, comprises moving the cover such that it permanently receives a part of the coating material non-absorbed by the substrate |
WO2015007653A1 (en) | 2013-07-18 | 2015-01-22 | W & L Coating Systems Gmbh | Plasma-chemical coating apparatus |
EP3632846A1 (en) | 2018-10-01 | 2020-04-08 | Samsung Electronics Co., Ltd. | Method of forming graphene |
WO2020187896A1 (en) | 2019-03-18 | 2020-09-24 | The 280 Company | System and process for manufacturing a graphene layer on a substrate |
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