DE102021208761A1 - Connection of a sensor chip to a measurement object - Google Patents
Connection of a sensor chip to a measurement object Download PDFInfo
- Publication number
- DE102021208761A1 DE102021208761A1 DE102021208761.2A DE102021208761A DE102021208761A1 DE 102021208761 A1 DE102021208761 A1 DE 102021208761A1 DE 102021208761 A DE102021208761 A DE 102021208761A DE 102021208761 A1 DE102021208761 A1 DE 102021208761A1
- Authority
- DE
- Germany
- Prior art keywords
- measurement object
- sensor chip
- layer
- foil
- connecting foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0006—Exothermic brazing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/145—Housings with stress relieving means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
- B23K35/0238—Sheets, foils layered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3033—Ni as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
- B23K35/322—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C a Pt-group metal as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0331—Manufacturing methods by local deposition of the material of the bonding area in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/0341—Manufacturing methods by blanket deposition of the material of the bonding area in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/03452—Chemical vapour deposition [CVD], e.g. laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05073—Single internal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05164—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
- H01L2224/2711—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/83825—Solid-liquid interdiffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Child & Adolescent Psychology (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Die Erfindung betrifft ein Verfahren zur Verbindung eines Sensorchips (1) mit einem Messobjekt (2). Gemäß dem Verfahren werden ein Messobjekt (2), ein Sensorchip (1) und eine Verbindungsfolie (10) bereitgestellt, wobei die Verbindungsfolie (10) metallische Materialien (11, 12) enthält, die bei ihrer Aktivierung exotherm reagieren. Die Verbindungsfolie (10) wird zwischen dem Sensorchip (1) und dem Messobjekt (2) platziert, und die metallischen Materialien (11, 12) der Verbindungsfolie (10) aktiviert, sodass sich die Verbindungsfolie (10) derart erhitzt, dass der Sensorchip (1) mit dem Messobjekt (2) stoffschlüssig verbunden wird.The invention relates to a method for connecting a sensor chip (1) to a measurement object (2). According to the method, a measurement object (2), a sensor chip (1) and a connecting film (10) are provided, the connecting film (10) containing metallic materials (11, 12) which react exothermally when activated. The connecting foil (10) is placed between the sensor chip (1) and the measurement object (2), and the metallic materials (11, 12) of the connecting foil (10) are activated so that the connecting foil (10) heats up in such a way that the sensor chip ( 1) is firmly bonded to the measurement object (2).
Description
Die Erfindung betrifft eine Verbindung eines Sensorchips mit einem Messobjekt. Beansprucht werden in diesem Zusammenhang insbesondere ein Verfahren zur Befestigung des Sensorchips an dem Messobjekt sowie eine Anordnung des Sensorchips an dem Messobjekt.The invention relates to connecting a sensor chip to a measurement object. In this context, a method for attaching the sensor chip to the measurement object and an arrangement of the sensor chip on the measurement object are claimed in particular.
Für verschiedene Anwendungsfälle ist es notwendig, einen Sensorchip an einem größeren mechanischen Bauteil, dem Messobjekt, zu befestigen. Dies ist wichtig für die Platzierung des Sensorsystems und für eine Verschaltung der physikalischen Signale, die gemessen werden sollen. Sensoren zur Kraftmessung oder zur Verformungsmessung sind dabei stark von der Verbindungsschicht zwischen dem Sensorchip und dem Messobjekt abhängig. Das Messobjekt und der Sensorchip können aus verschiedenen Materialien wie Metall, Silizium oder einem organischen Material bestehen. Die Verbindungsschicht muss eine starke Haftung bieten und formstabil sein, um eine gute Kraft- und Deformationsübertragung ohne eine (zusätzliche und unvorhersehbare) Dämpfung oder Zeitverzögerungen zu gewährleisten. Die Sensorleistung über die Lebensdauer hängt von der Langzeitstabilität der Verbindungsschicht ab, insbesondere von der Temperatur-/Feuchtigkeits-/Chemikalienstabilität, um Signaldrift, Signalamplitudenschrumpfung und Zeitverzögerungen zu vermeiden.For various applications it is necessary to attach a sensor chip to a larger mechanical component, the measurement object. This is important for the placement of the sensor system and for interconnecting the physical signals to be measured. Sensors for force measurement or for measuring deformation are heavily dependent on the connection layer between the sensor chip and the measurement object. The measurement object and the sensor chip can consist of different materials such as metal, silicon or an organic material. The tie layer must provide strong adhesion and be dimensionally stable to ensure good force and deformation transfer without (additional and unpredictable) cushioning or time delays. Sensor performance over lifetime depends on long-term stability of compound layer, especially temperature/humidity/chemical stability to avoid signal drift, signal amplitude shrinkage and time lag.
Stand der Technik für die Kontaktierung dieser Sensoren auf einem größeren Messobjekt sind Kleben und Löten. Diese Methoden sind für die industrielle Fertigung relativ einfach zu realisieren, erfordern aber meist einen manuellen Prozess, der zeitaufwendig und nicht kosteneffizient ist. Die Klebe-/Lötverbindungen sind mit unterschiedlichen Temperaturgradienten, Feuchtigkeits-/Chemikalienabhängigkeit und Langzeitalterung verbunden. Dies kann die Signalqualität verringern oder den Sensor sogar zerstören. Andere Verbindungstechniken sind aufgrund der Prozessparameter mit hohen Temperaturen, mechanischen Drücken oder hohem Vakuum bzw. Schutzgas unpraktisch. Andere Methoden benötigen starke elektromagnetische Felder. Unpraktisch heißt in diesem Zusammenhang, es könnte den Sensorchip oder das Messobjekt zerstören.The state of the art for contacting these sensors on a larger measurement object is gluing and soldering. These methods are relatively easy to implement for industrial manufacturing, but mostly require a manual process that is time-consuming and not cost-effective. The adhesive/soldered joints are associated with different temperature gradients, humidity/chemical dependency and long-term aging. This can reduce the signal quality or even destroy the sensor. Other joining techniques are impractical due to the process parameters involving high temperatures, mechanical pressures, or high vacuum or inert gas. Other methods require strong electromagnetic fields. In this context, impractical means that it could destroy the sensor chip or the measurement object.
Eine Aufgabe der vorliegenden Erfindung kann darin gesehen werden, eine alternative Verbindung zwischen einem Sensorchip und einem Messobjekt bereitzustellen, welche den vorstehend beschriebenen Problemen Rechnung trägt. Die Aufgabe wird gelöst durch die Gegenstände der unabhängigen Patentansprüche. Vorteilhafte Ausführungsformen sind Gegenstand der Unteransprüche, der folgenden Beschreibung sowie der Figuren.An object of the present invention can be seen as providing an alternative connection between a sensor chip and a measurement object, which takes into account the problems described above. The object is solved by the subject matter of the independent patent claims. Advantageous embodiments are the subject matter of the dependent claims, the following description and the figures.
Die vorliegende Erfindung schlägt einen reaktiver Folienlötprozess vor, um eine insbesondere intermetallische Verbindung für Sensorchips auf einem größeren Messobjekt zu erhalten. Der Fügeprozess basiert auf der Verwendung einer reaktiven Mehrschichtfolie als lokale Wärmequelle. Die Folie besteht aus einer neuen Klasse von nanotechnologischem Material, in dem sich selbst ausbreitende exotherme Reaktionen bei Raumtemperatur durch einen Zündprozess auslösen lassen. Durch das Einbringen einer solchen Folie beispielsweise zwischen zwei Lötschichten und dem Sensorchip sowie dem Messobjekt schmilzt die durch die Reaktion in der Folie erzeugte Wärme die Lötschichten auf, sodass die Verbindungen bei Raumtemperatur in etwa einer Sekunde abgeschlossen sind. Die induzierte Wärme während der Reaktion ist aufgrund der schnellen Reaktionsgeschwindigkeit (beispielsweise 10 m/s) und der geringen Materialdicke (beispielsweise <100pm)sehr gering.The present invention proposes a reactive foil soldering process in order to obtain a particularly intermetallic connection for sensor chips on a larger measurement object. The joining process is based on the use of a reactive multi-layer film as a local heat source. The foil consists of a new class of nanotechnology material in which self-propagating exothermic reactions can be triggered at room temperature by an ignition process. By inserting such a foil, for example, between two solder layers and the sensor chip and the measurement object, the heat generated by the reaction in the foil melts the solder layers, so that the connections are completed in about one second at room temperature. The heat induced during the reaction is very low due to the fast reaction speed (e.g. 10 m/s) and the small material thickness (e.g. <100 pm).
In diesem Sinne wird gemäß einem ersten Aspekt der Erfindung ein Verfahren zur Verbindung eines Sensorchips mit einem Messobjekt bereitgestellt. In einem ersten Schritt (100) des Verfahrens wird ein Messobjekt bereitgestellt. Weiterhin wird ein Sensorchip bereitgestellt, der dazu eingerichtet ist, eine physikalische Eigenschaft eines Messobjekts zu erfassen. Ferner wird eine Verbindungsfolie bereitgestellt, die metallische Materialien enthält, die bei ihrer Aktivierung exotherm reagieren.In this sense, according to a first aspect of the invention, a method for connecting a sensor chip to a measurement object is provided. In a first step (100) of the method, a measurement object is provided. Furthermore, a sensor chip is provided which is set up to record a physical property of a measurement object. Furthermore, a connecting foil is provided which contains metallic materials which react exothermally when activated.
Das Messobjekt kann insbesondere deutlich größer sein als der Sensorchip. Bei dem Messobjekt kann es sich beispielsweise um eine Achse, eine Motorwelle oder eine Getriebewelle eines Kraftfahrzeugs handeln. Der Sensorchip kann insbesondere dazu eingerichtet sein, eine Verformung, eine Dehnung, eine Kraft und/oder ein Drehmoment zu messen die bzw. das von dem Messobjekt erzeugt wird, insbesondere von der Achse, von der Motorwelle oder von der Getriebewelle.In particular, the measurement object can be significantly larger than the sensor chip. The measurement object can be, for example, an axle, an engine shaft or a transmission shaft of a motor vehicle. In particular, the sensor chip can be set up to measure a deformation, a strain, a force and/or a torque which is generated by the measurement object, in particular by the axis, by the motor shaft or by the transmission shaft.
Als Verbindungsfolie kann beispielsweise eine sogenannte NanoFoil® der Indium Corporation zum Einsatz kommen. Die NanoFoil® ist eine reaktive Mehrschichtfolie, die durch Aufdampfen von Tausenden von abwechselnden nanoskaligen Schichten aus Aluminium und Nickel hergestellt wird. Wenn die Folie durch einen kleinen Impuls lokaler Energie aus elektrischen, optischen oder thermischen Quellen aktiviert wird, reagiert sie exotherm, um in Bruchteilen einer Sekunde präzise lokale Hitze bis zu Temperaturen von 1500 °C zu erzeugen.For example, a so-called NanoFoil® from the Indium Corporation can be used as the connecting foil. The NanoFoil® is a reactive multilayer foil made by evaporating thousands of alternating nanoscale layers of aluminum and nickel. When activated by a small pulse of localized energy from electrical, optical or thermal sources, the foil reacts exothermically to generate precise localized heat up to temperatures of 1500°C in fractions of a second.
Die Verbindungsfolie wird in einem zweiten Verfahrensschritt (200) zwischen dem Sensorchip und dem Messobjekt platziert. Das Platzieren kann derart erfolgen, dass die Verbindungsfolie in einer Sandwich-Konfiguration entweder direkt an einander zugewandten Oberflächen des Sensorchips und des Messobjekts anliegt. Alternativ kann das Platzieren derart erfolgen, dass die Verbindungsfolie in einer Sandwich-Konfiguration zwischen zwei Lötschichten angeordnet ist, wobei die Lötschichten auf einander zugewandten Oberflächen des Sensorchips und des Messobjekts aufgetragen sind. Diese Oberflächen des Sensorchips und des Messobjekts sind insbesondere ebene Oberflächen, die aneinander in Anlage gebracht werden können, um verschweißt oder verlötet zu werden.In a second method step (200), the connecting foil is placed between the sensor chip and the measurement object. The placement can be such that the connecting foil is in a sandwich configuration either directly to each other facing surfaces of the sensor chip and the measurement object. Alternatively, the placement can be such that the connection foil is arranged in a sandwich configuration between two solder layers, the solder layers being applied to mutually facing surfaces of the sensor chip and the measurement object. In particular, these surfaces of the sensor chip and the measurement object are flat surfaces that can be brought into contact with one another in order to be welded or soldered.
In einem dritten Verfahrensschritt (300) erfolgt ein Aktivieren der metallischen Materialien der Verbindungsfolie, sodass sich die Verbindungsfolie derart erhitzt, dass der Sensorchip mit dem Messobjekt stoffschlüssig verbunden wird. Das Aktivieren kann beispielsweise durch eine Zündung erfolgen. Das Verfahren benötigt keine besondere Hitze, kein Vakuum und keine Gasatmosphäre. Die Zündung der Verbindungsfolie kann beispielsweise mit einer handelsüblichen 9V-Batterie erfolgen. In dem Verfahrensschritt (300) kann das Material des Sensorchips und/oder des Messobjekts aufgeschmolzen oder angeschmolzen werden, sodass der Sensorchip direkt mit dem Messobjekt verschweißt wird. Alternativ kann der Sensorchip durch Aufschmelzen der Lötschichten indirekt mit dem Messobjekt verlötet werden.In a third method step (300), the metallic materials of the connecting foil are activated so that the connecting foil heats up in such a way that the sensor chip is connected to the measurement object in a materially bonded manner. The activation can take place, for example, by an ignition. The process requires no special heat, no vacuum and no gas atmosphere. The connecting foil can be ignited with a standard 9V battery, for example. In method step (300), the material of the sensor chip and/or the measurement object can be melted or partially melted, so that the sensor chip is welded directly to the measurement object. Alternatively, the sensor chip can be indirectly soldered to the measurement object by melting the solder layers.
Es müssen während des Verfahrens keine hohen Drücke und keine hohen Temperaturen auf den Sensorchip und/oder das Messobjekt ausgeübt werden. Auch auf hohe elektromagnetische Felder kann verzichtet werden. Die durch das Aktivieren der metallischen Materialien der Verbindungsfolie entstehende metallische Verbindungsschicht zwischen dem Sensorchip und dem Messobjekt weist insbesondere eine hohe Formstabilität sowie eine hohe Wärmeleitfähigkeit und elektrische Leitfähigkeit auf. Weiterhin vereinfacht sich der Herstellungsprozess bzw. der Bondprozess, was eine besonders kostengünstige Produktion ermöglicht.No high pressures or high temperatures have to be exerted on the sensor chip and/or the measurement object during the process. High electromagnetic fields can also be dispensed with. The metallic connecting layer between the sensor chip and the measurement object that is created by activating the metallic materials of the connecting film has, in particular, high dimensional stability and high thermal conductivity and electrical conductivity. Furthermore, the manufacturing process or the bonding process is simplified, which enables particularly cost-effective production.
Das erfindungsgemäße Verfahren zeichnet sich durch geringere Temperaturen und Spannungen während des Verbindens aus. Diese geringeren Spannungen induzieren weniger Vorspannungen in den Sensorchip und erhöhen die Leistung und die Stabilität des Sensorchips. Darüber hinaus ermöglichen die niedrigen Temperaturen und der niedrige Druck eine breitere Palette von Materialien wie beispielsweise Polymere. Der durch das erfindungsgemäße Verfahren erzeugte Verbund zwischen Sensorchip und Messobjekt altert nicht mit der Zeit und Temperaturen. Dampf, Druck oder ähnliches bewirken keine Veränderung von Parametern der Verbindung. Das Verbundmaterial (Metall) ist insbesondere beständig gegen Feuchtigkeit, Chemikalien, hohe/niedrige Temperaturen und schnelle Temperaturwechsel. Der Verbund verändert deshalb seine Parameter nicht, insbesondere durch Temperatur, Feuchtigkeit, Druck oder Ähnliches. Das Verbundmaterial (insbesondere Metall) bietet weiterhin eine elastische Verformung für Wiederholbarkeit.The method according to the invention is characterized by lower temperatures and stresses during the connection. These lower voltages induce less bias into the sensor chip and increase the performance and stability of the sensor chip. In addition, the low temperatures and low pressure allow for a wider range of materials such as polymers. The bond between the sensor chip and the measurement object produced by the method according to the invention does not age with time and temperatures. Steam, pressure or the like do not change the parameters of the connection. The composite material (metal) is particularly resistant to moisture, chemicals, high/low temperatures and rapid temperature changes. The composite therefore does not change its parameters, particularly as a result of temperature, humidity, pressure or the like. The composite material (particularly metal) still offers elastic deformation for repeatability.
Besonders vorteilhaft können Lötschichten auf den Sensorchip und das Messobjekt aufgetragen werden. Dies erfolgt insbesondere, bevor die Verbindungsfolie in dem zweiten Verfahrensschritt (200) zwischen dem Sensorchip und dem Messobjekt platziert wird. Durch anschließendes Aktivieren der Verbindungsfolie entsteht ausreichend Wärme, um die Lötschichten aufzuschmelzen und den Sensorchip mit dem Messobjekt zu verlöten. In diesem Sinne ist gemäß einer Ausführungsform vorgesehen, dass
- - eine erste Lötschicht auf dem Sensorchip aufgetragen wird und eine zweite Lötschicht auf dem Messobjekt aufgetragen wird,
- - die Verbindungsfolie in dem Schritt (200) zwischen der ersten Lötschicht und der zweiten Lötschicht platziert wird, und
- - die metallischen Materialien der Verbindungsfolie in dem Schritt (300) aktiviert werden, sodass sich die Verbindungsfolie derart erhitzt, dass die erste Lötschicht und die zweite Lötschicht schmelzen und der Sensorchip durch die aufgeschmolzene erste Lötschicht und die aufgeschmolzene zweite Lötschicht mit dem Messobjekt verlötet wird.
- - a first layer of solder is applied to the sensor chip and a second layer of solder is applied to the measurement object,
- - the connecting foil is placed in step (200) between the first layer of solder and the second layer of solder, and
- - the metallic materials of the connecting foil are activated in step (300), so that the connecting foil heats up in such a way that the first soldering layer and the second soldering layer melt and the sensor chip is soldered to the measurement object by the melted first soldering layer and the melted second soldering layer.
Die Lötschichten können beispielsweise aus Kupfer, Gold Palladium oder Nickel bestehen. Diese Materialien können als metallische Startschichten (erste und zweite Lötschicht) besonders vorteilhaft durch Plasmaverfahren, Sputterverfahren oder Aufdampfen auf einander zugewandten Oberflächen der zu verbindenden Teile (Sensorchip, Messobjekt) aufgebracht werden. Weitere Möglichkeiten sind durch Zwei-Schuss-Spritzgießen, additive Fertigung usw. gegeben.The solder layers can consist of copper, gold, palladium or nickel, for example. These materials can be applied as metallic starting layers (first and second soldering layer) particularly advantageously by plasma methods, sputtering methods or vapor deposition on surfaces of the parts to be connected (sensor chip, measurement object) that face one another. Other options are two-shot injection molding, additive manufacturing, etc.
Die Verbindungsfolie kann besonders genau und effizient durch Laserschneiden in den Abmessungen der gewünschten Fügefläche geformt und zwischen den beiden Oberflächen platziert werden. Dies erfolgt insbesondere, bevor die Verbindungsfolie in dem Schritt (200) zwischen dem Sensorchip und dem Messobjekt platziert wird. In diesem Sinne ist gemäß einer weiteren Ausführungsform vorgesehen, dass die Verbindungsfolie durch Laserschneiden derart bearbeitet wird, dass die Verbindungsfolie eine Form und Maße annimmt, die eine vorgesehene Fügefläche zwischen dem Sensorchip und dem Messobjekt abdeckt.The connecting foil can be shaped particularly precisely and efficiently by laser cutting to the dimensions of the desired joining surface and placed between the two surfaces. This takes place in particular before the connecting film is placed between the sensor chip and the measurement object in step (200). In this sense, according to a further embodiment, it is provided that the connecting film is processed by laser cutting in such a way that the connecting film assumes a shape and dimensions that cover an intended joint surface between the sensor chip and the measurement object.
Weiterhin kann eine zusätzliche Nase der Verbindungsfolie aus der Verbindungsschicht herausgeführt werden, um den Zugang für die Zündung mittels Draht oder Wärmenadel zu erleichtern. In diesem Sinne ist gemäß einer weiteren Ausführungsform vorgesehen, dass die Verbindungsfolie einen Aktivierungsabschnitt (z.B. in Form der vorstehend genannten Nase) aufweist, der nicht von dem Sensorchip und/oder dem Messobjekt verdeckt ist und der zum Anlegen eines Aktivierungsmittels (z.B. der vorstehend genannte Draht, die Wärmenadel oder Batterie) frei zugänglich ist.Furthermore, an additional nose of the connecting film can be led out of the connecting layer to provide access for the ignition to make it easier to attach with a wire or heat needle. In this sense, according to a further embodiment, it is provided that the connecting film has an activation section (e.g. in the form of the aforementioned nose) which is not covered by the sensor chip and/or the measurement object and which is used to apply an activation means (e.g. the aforementioned wire , the heat needle or battery) is freely accessible.
Um eine unvorhersehbare Verformung des Verbundes zu verhindern, kann ein Fixierpad mit geringem Druck auf die Schichten gelegt werden. In diesem Sinne ist gemäß einer weiteren Ausführungsform vorgesehen, dass mittels eines Fixierpads, das auf den Sensorchip und/oder das Messobjekt einen Druck ausübt, einer Verformung der Lötschichten und der Verbindungsfolie während des Aktivierens und Verbindens in Schritt (300) entgegengewirkt wird. Der Druck ist dabei derart gering, dass er zu keinen Spannungen innerhalb des Sensorchips und/oder des Messobjekts führt, welche die Festigkeit der Verbindung zwischen dem Sensorchip und dem Messobjekt oder die Messgenauigkeit beinträchtigen könnten.To prevent unpredictable deformation of the composite, a fixing pad can be placed on the layers with little pressure. In this sense, according to a further embodiment, a fixing pad that exerts pressure on the sensor chip and/or the measurement object is used to counteract deformation of the solder layers and the connecting foil during the activation and connection in step (300). In this case, the pressure is so low that it does not lead to any stresses within the sensor chip and/or the measurement object, which could impair the strength of the connection between the sensor chip and the measurement object or the measurement accuracy.
Der Sensorchip kann eine Metalloberfläche aufweisen, um eine optimale Verbindung zwischen dem metallischen Messobjekt und dem Sensorchip zu gewährleisten. Diese Verbindung ist besonders relevant für die Messgenauigkeit des Sensorchips. In diesem Sinne ist gemäß einer weiteren Ausführungsform vorgesehen, dass die erste Lötschicht auf eine metallische Oberfläche des Sensorchips aufgetragen wird, wobei die zweite Lötschicht auf eine metallische Oberfläche des Messobjekts aufgetragen wird.The sensor chip can have a metal surface in order to ensure an optimal connection between the metal measurement object and the sensor chip. This connection is particularly relevant for the measurement accuracy of the sensor chip. In this sense, according to a further embodiment, it is provided that the first soldering layer is applied to a metallic surface of the sensor chip, with the second soldering layer being applied to a metallic surface of the measurement object.
Mittels der Verbindungsfolie und der Lötschichten kann zwischen dem Sensorchip und dem Messobjekt eine intermetallische Bindung („stoffschlüssig“) geschaffen werden, die keine hohen Temperaturen, Drücke, elektromagnetische Felder, etc. zur Herstellung benötigt. Diese intermetallische Verbindung kann insbesondere zwischen einem metallischen Gehäuseteil des Sensorchips und einem metallischen Teil des Messobjekts (das auch ganz aus einem Metall bestehen kann) geschaffen werden. Durch die intermetallische Verbindung wird eine 1 :1-Signalübertragung vom Messobjekt zum Sensorchip ermöglicht. Gemäß einer weiteren Ausführungsform ist daher vorgesehen, dass der Sensorchip ein Gehäuse mit einer ersten metallischen Oberfläche aufweist, auf welche die erste Lötschicht aufgetragen wird, und dass das Messobjekt eine zweite metallische Oberfläche aufweist, auf welche die zweite Lötschicht aufgetragen wird.By means of the connecting foil and the solder layers, an intermetallic bond ("material bond") can be created between the sensor chip and the measurement object, which does not require high temperatures, pressures, electromagnetic fields, etc. for production. This intermetallic connection can be created in particular between a metallic housing part of the sensor chip and a metallic part of the measurement object (which can also consist entirely of metal). The intermetallic compound enables 1:1 signal transmission from the measurement object to the sensor chip. According to a further embodiment it is therefore provided that the sensor chip has a housing with a first metallic surface to which the first soldering layer is applied and that the measurement object has a second metallic surface to which the second soldering layer is applied.
Alternativ eignet sich das Verbindungsverfahren gemäß der vorliegenden Erfindung aufgrund der Eliminierung oder Reduzierung von Druckspannungen auch für sogenannte „bare die“ Silizium-Sensorchips (micro electro mechanical systems MEMS). As an alternative, the connection method according to the present invention is also suitable for so-called “bare die” silicon sensor chips (micro electro mechanical systems MEMS) due to the elimination or reduction of compressive stresses.
Solche Sensorchips können eine dem Messobjekt zugewandte Außenschicht aus Silizium aufweisen. Derartige Sensorchips sind nicht in einem Gehäuse verbaut, sondern können über die Siliziumschicht, auf welche die Silberpartikel aufgebracht werden, mit dem Messobjekt verbunden werden. In diesem Sinne ist gemäß einer weiteren Ausführungsform vorgesehen, dass
- - der Sensorchip kein Gehäuse aufweist,
- - der Sensorchip eine dem Messobjekt zugewandte Siliziumschicht aufweist,
- - die Verbindungsfolie in Schritt zwischen der Siliziumschicht und dem Messobjekt platziert wird, und
- - die metallischen Materialien der Verbindungsfolie in Schritt aktiviert werden, sodass sich die Verbindungsfolie derart erhitzt, dass die Siliziumschicht des Sensorchips mit dem Messobjekt stoffschlüssig verbunden wird.
- - the sensor chip has no housing,
- - the sensor chip has a silicon layer facing the measurement object,
- - the connecting foil is placed in step between the silicon layer and the measurement object, and
- - The metallic materials of the connecting film are activated in
step 10, so that the connecting film heats up in such a way that the silicon layer of the sensor chip is connected to the measurement object in a materially bonded manner.
Das Messobjekt kann mit einer Formschluss-Oberflächenstruktur versehen werden, die mittels der Verbindungsfolie und/oder der Lötschichten nicht nur stoffschlüssig, sondern auch formschlüssig verbunden wird. Die Formschluss-Oberflächenstruktur kann beispielsweise Kanäle mit oder ohne Hinterschneidungen aufweisen. Diese Formschluss-Oberflächenstruktur kann bewusst bzw. aktiv erzeugt werden, z.B. durch bekannte Verfahren zur Behandlung von MEMS-Oberflächen. Die durch das Aktivieren in Schritt (300) erzeugte Schmelzschicht kann in Zwischenräume der Formschluss-Oberflächenstruktur eindringen und sich in der sich anschließenden Verfestigung darin verhaken oder verankern (Formschluss). Dies kann geschehen, indem die Verbindungsfolie zwischen dem Sensorchip und der Formschluss-Oberflächenstruktur des Messobjekts angeordnet wird. Dabei kann die Verbindungsfolie zwischen der ersten Lötschicht und der zweiten Lötschicht angeordnet sein, wobei die erste Lötschicht an dem Sensorchip und die zweite Lötschicht an der Formschluss-Oberflächenstruktur des Messobjekts anliegt.The measurement object can be provided with a form-fitting surface structure, which is not only connected in a material-to-material manner, but also in a form-fitting manner, by means of the connecting film and/or the soldering layers. The form-fitting surface structure can have channels with or without undercuts, for example. This form-fitting surface structure can be produced consciously or actively, e.g. using known methods for treating MEMS surfaces. The molten layer produced by the activation in step (300) can penetrate into interstices of the interlocking surface structure and get caught or anchored therein during the subsequent solidification (interlocking). This can be done by arranging the connecting film between the sensor chip and the form-fitting surface structure of the measurement object. In this case, the connecting film can be arranged between the first soldering layer and the second soldering layer, with the first soldering layer being in contact with the sensor chip and the second soldering layer being in contact with the form-fitting surface structure of the measurement object.
Durch den vorstehend beschriebenen Formschluss kann die Messgenauigkeit in hohem Maße verbessert werden. In diesem Sinne ist in einer weiteren Ausführungsform vorgesehen, dass
- - eine mit dem Sensorchip zu verbindende Oberfläche des Messobjekts zeitlich vor dem Schritt (100) mit einer Formschluss-Oberflächenstruktur versehen wird,
- - in Schritt (200) die Verbindungsfolie zwischen dem Sensorchip und der Formschluss-Oberflächenstruktur des Messobjekts platziert wird, und
- - in Schritt (300) die metallischen Materialien der Verbindungsfolie aktiviert werden, sodass sich die Verbindungsfolie derart erhitzt, dass der Sensorchip mit der Formschluss-Oberflächenstruktur des Messobjekts stoffschlüssig und formschlüssig verbunden wird.
- - a surface of the measurement object to be connected to the sensor chip is provided with a form-fitting surface structure before step (100),
- - in step (200) the connecting film is placed between the sensor chip and the form-fitting surface structure of the measurement object, and
- - in step (300) the metallic materials of the connecting film are activated so that the connecting film heats up in such a way that the sensor chip is connected to the form-fitting surface structure of the measurement object in a material-to-material and form-fitting manner.
Alternativ oder zusätzlich zu der vorstehend beschriebenen insbesondere mikroskopischen Formschlussstruktur, kann das Messobjekt eine makroskopische Formschlussstruktur aufweisen, z.B. in Form einer zu dem Sensorchip passenden Vertiefung, in welche der Sensorchip eingelassen werden kann.As an alternative or in addition to the microscopic form-fitting structure described above, the measurement object can have a macroscopic form-fitting structure, e.g. in the form of a recess matching the sensor chip, into which the sensor chip can be inserted.
Die detektierbare Messgröße kann weiterhin durch besondere Strukturen (Kraftnebenschluss) des Messobjekts erhöht werden. Durch spezielle Strukturen im Messobjekt können die Kräfte in bestimmten Richtungen verstärkt, verringert oder gefiltert werden. Ähnlich wie bei Verbindungstechniken oder auch im Getriebedesign können auf diese Weise Kräfte verteilt oder gelenkt werden. Beispielsweise kann das Messobjekt einen Sockel bilden, der von einer äußeren Oberfläche des Messobjekts absteht, an dem der Sensorchip befestigt wird und der eine Kraftverringerung bewirkt. Möglich sind aber auch beispielsweise Vertiefungen, Rippen oder Sicken, die Kräfte in bestimmten Raumrichtungen verstärken oder verringern, so wie dies beispielsweise bei einer Sicke in einem Blech der Fall ist. Der Vorteil liegt in einer besonders präzisen Ansteuerung des Sensorchips, indem eine gewünschte Kraftrichtung verstärkt oder verringert wird. Dadurch kann derselbe Sensorchip für unterschiedliche Messbereiche eingesetzt werden, ohne dass der Sensorchip selbst angepasst werden muss.The detectable measured variable can also be increased by special structures (force shunt) of the measurement object. Special structures in the measurement object can be used to increase, reduce or filter the forces in certain directions. Similar to connection techniques or in gear design, forces can be distributed or directed in this way. For example, the measurement object can form a base that protrudes from an outer surface of the measurement object to which the sensor chip is attached and which causes a reduction in force. However, depressions, ribs or beads are also possible, for example, which increase or reduce forces in certain spatial directions, as is the case, for example, with a bead in a metal sheet. The advantage lies in a particularly precise control of the sensor chip by amplifying or reducing a desired direction of force. As a result, the same sensor chip can be used for different measuring ranges without the sensor chip itself having to be adapted.
Gemäß einem zweiten Aspekt der Erfindung wird eine Anordnung eines Sensorchips an einem Messobjekt bereitgestellt, wobei der Sensorchip durch ein Verfahren nach einem Verfahren gemäß dem ersten Aspekt der Erfindung mit dem Messobjekt verbunden worden ist.According to a second aspect of the invention, an arrangement of a sensor chip on a measurement object is provided, wherein the sensor chip has been connected to the measurement object by a method according to a method according to the first aspect of the invention.
Im Folgenden werden Ausführungsbeispiele der Erfindung anhand der schematischen Zeichnung näher erläutert, wobei gleiche oder ähnliche Elemente mit dem gleichen Bezugszeichen versehen sind. Hierbei zeigt
-
1 eine Seitenansicht eines Ausführungsbeispiels einer erfindungsgemäßen Anordnung eines Sensorchips an einem Messobjekt, wobei der Sensorchip mittels einer Verbindungsfolie an dem Messobjekt befestigt ist, -
2 zwei perspektivische Ansichten einer Oberseite und einer Unterseite eines Gehäuses fürden Sensorchip nach 1 , -
3 eine Explosionsdarstellung von Schichten und Werkzeugen zur Verbindung eines Sensorchips mit einem Messobjekt mittels einer Verbindungsfolie sowie die durch das Verbinden entstehende Anordnung, -
4 einen Ablauf eines erfindungsgemäßen Verfahrens zur Verbindung des Sensorchips mitdem Messobjekt nach 1 oder 3 und -
5 eine stark vergrößerte Querschnittsansicht einer Verbindungsfolie für dieAnordnung nach 1 und 3 .
-
1 a side view of an exemplary embodiment of an arrangement according to the invention of a sensor chip on a measurement object, the sensor chip being attached to the measurement object by means of a connecting film, -
2 two perspective views of a top and a bottom of a housing for thesensor chip 1 , -
3 an exploded view of layers and tools for connecting a sensor chip to a measurement object using a connecting film and the arrangement resulting from the connection, -
4 a sequence of a method according to the invention for connecting the sensor chip to themeasurement object 1 or3 and -
5 a greatly enlarged cross-sectional view of a connecting foil for the arrangement according to FIG1 and3 .
Das Messobjekt 2 kann insbesondere deutlich größer sein als der Sensorchip 1. Bei dem Messobjekt 2 kann es sich beispielsweise um eine Achse, eine Motorwelle oder eine Getriebewelle eines Kraftfahrzeugs handeln, wobei der Sensorchip 1 dazu eingerichtet sein kann, eine Verformung, eine Dehnung, eine Spannung, eine Kraft und/oder ein Drehmoment zu messen die bzw. das von der Achse, der Motorwelle oder von der Getriebewelle erzeugt wird. Der Sensorchip 1 kann ein Siliziumchip sein, der veränderliche Widerstände aufweist, die auf Verformung reagieren. Das lässt proportional zur Qualität der Verbindung mit dem Messobjekt 2 auf die Verformung im Messobjekt 2 schließen.The measurement object 2 can in particular be significantly larger than the
Eine weiter unten näher beschriebene Verbindungsfolie 10 ermöglicht eine feste Verbindung des Sensorchips 1 mit dem Messobjekt 2. Diese Verbindung überträgt Kräfte der Messgröße sowie auch Störgrößen durch thermische Ausdehnung. Die Art der Verbindung stellt dabei Anforderungen an die Oberflächenbeschaffenheit von Messobjekt 2 und Sensorchip 1. Zwei rechts außen in
Das Messobjekt 2 weist eine der metallischen Schicht 5 zugewandte Messobjekt-Oberfläche 6 auf, die mit einer Formschluss-Oberflächenstruktur 7 versehen ist. Die Messobjekt-Oberfläche 6 und die Formschluss-Oberflächenstruktur 7 besteht aus einem Metall (insbesondere das gleiche Metall, aus dem auch der übrige Teil des Messobjekts 2 hergestellt ist) und befindet sich auf einem Sockel 8. Der Sockel 8 wird durch das Messobjekt 2 geformt. Der Sockel 8 steht beispielsweise radial von einer äußeren Oberfläche 9 des Messobjekts 2 ab.The measurement object 2 has a measurement object surface facing the
In einem ersten Verfahrensschritt 100 werden der Sensorchip 1, das Messobjekt 2 und die Verbindungsfolie 10 bereitgestellt. Die Verbindungsfolie 10 ist in dem gezeigten Ausführungsbeispiel eine NanoFoil®,eine reaktive Mehrschichtfolie, die durch Aufdampfen von Tausenden von abwechselnden nanoskaligen Schichten aus Aluminium 11 und Nickel 12 hergestellt wird (
In einem zweiten Verfahrensschritt 200 wird die Verbindungsfolie 10 zwischen dem Sensorchip 1 und dem Messobjekt 2 platziert, wie dies durch
In einem dritten Verfahrensschritt 300 werden die Aluminiumschichten 11 und die Nickelschichten 12 der Verbindungsfolie 10 mittels einer Zündquelle aktiviert. Die Nickelschichten 12 der Verbindungsfolie 10 reagieren daraufhin stark exotherm, sodass die metallische Schicht 5 des Gehäuses 3 des Sensorchips 1 mit der Formschluss-Oberflächenstruktur 7 des Messobjekts 1 verschweißt wird (stoffschlüssige Verbindung). Weiterhin kann aufgeschmolzenes Material der Aluminiumschichten 11 und/oder der Nickelschichten 12 in Zwischenräume der Formschluss-Oberflächenstruktur 7 des Messobjekts 2 eindringen und nach der Erstarrung einen Formschluss zwischen dem Gehäuse 3 des Sensorchips 1 und dem Messobjekt 2 bewirken.In a
Die detektierbare Messgröße kann durch besondere Strukturen (Kraftnebenschluss) des Messobjekts 2 erhöht werden. In dem gezeigten Ausführungsbeispiel bewirkt der Sockel 8 eine Kraftverringerung. Alternativ oder zusätzlich kann das Messobjekt 2 auch beispielsweise Vertiefungen, Rippen, Sicken oder ähnliches bilden, die Kräfte in bestimmten Raumrichtungen verstärken oder verringern.The detectable measurement variable can be increased by special structures (force shunt) of the measurement object 2. In the embodiment shown, the base 8 causes a reduction in force. Alternatively or additionally, the measurement object 2 can also form indentations, ribs, beads or the like, for example, which increase or decrease forces in certain spatial directions.
In einer alternativen Ausführung kann das Gehäuse 3 entfallen und der Sensorchip 1 kann eine dem Messobjekt 2 zugewandte Siliziumschicht 5' aufweisen, welche die metallische Schicht 5 ersetzt. Die Verbindungsfolie 10 kann in diesem Fall zwischen der Siliziumschicht 5' zwischen der Siliziumschicht 5' des Sensorchips 1 und der Formschluss-Oberflächenstruktur 7 des Messobjekts 2 angeordnet werden, aktiviert werden und mit der Siliziumschicht 5' sowie mit der Formschluss-Oberflächenstruktur 7 stoffschlüssig und formschlüssig verbunden werden.In an alternative embodiment, the
In einem ersten Verfahrensschritt werden zunächst der Sensorchip 101, das Messobjekt 102 und eine Verbindungsfolie 103 bereitgestellt, wobei es sich um die gleiche Verbindungsfolie 10 handeln kann wie sie durch
Wie aus dem linken Teil der
Die Verbindungsfolie 103 wurde zuvor durch Laserschneiden derart bearbeitet, dass die Verbindungsfolie 103 eine Form und Maße annimmt, die eine vorgesehene Fügefläche 106 zwischen dem Sensorchip 101 und dem Messobjekt 102 abdeckt. Dabei wurde die Verbindungsfolie 103 derart geschnitten, dass sie einen Aktivierungsabschnitt 107 aufweist, der in dem gezeigten Ausführungsbeispiel nicht von dem Sensorchip 101 verdeckt ist und somit zum Anlegen eines Aktivierungsmittels 108 (z.B. eine Spannungsquelle in Form einer Batterie) frei zugänglich ist.The connecting
Die Verbindungsfolie 110 wird in dem Schritt 200 zwischen der ersten Lötschicht 104 und der zweiten Lötschicht 105 platziert. Der Aktivierungsabschnitt 107 ragt dabei aus dem durch den Sensorchip 101, dem Messobjekt 102 sowie den beiden Lötschichten 104, 105 gebildeten Stapel heraus, wenn alle Schichten aneinander liegen.The connecting foil 110 is placed between the
Ein Fixierpad 109 übt in dem gezeigten Ausführungsbeispiel über eine nachgiebige Schicht 110 einen Druck p auf den durch den Sensorchip 101, das Messobjekt 102 sowie durch die beiden Lötschichten 104, 105 gebildeten Stapel aus. Dieser Druck ist sehr gering und wirkt senkrecht auf eine äußere Oberfläche 111 des Sensorchips 101, insbesondere auf dessen Gehäuse (vgl.
In einem dritten Verfahrensschritt 300 werden die Aluminiumschichten 11 und die Nickelschichten 12 (vgl.
BezugszeichenlisteReference List
- Ff
- KraftPower
- pp
- Druck Print
- 11
- Sensorchipsensor chip
- 22
- Messobjektmeasurement object
- 33
- GehäuseHousing
- 44
- Sensorchip-Oberflächesensor chip surface
- 55
- metallische Schichtmetallic layer
- 5`5`
- Siliziumschichtsilicon layer
- 66
- Messobjekt-Oberflächetarget surface
- 77
- Formschluss-OberflächenstrukturForm-fitting surface structure
- 88th
- Sockelbase
- 99
- äußere Oberfläche Messobjektouter surface of measurement object
- 1010
- Verbindungsfolieconnecting foil
- 1111
- Aluminiumschichtaluminum layer
- 1212
- Nickelschichtnickel layer
- 100100
- erster Verfahrensschrittfirst step in the process
- 101101
- Sensorchipsensor chip
- 102102
- Messobjektmeasurement object
- 103103
- Verbindungsfolieconnecting foil
- 104104
- erste Lötschichtfirst layer of solder
- 105105
- zweite Lötschichtsecond layer of solder
- 106106
- Fügeflächemating surface
- 107107
- Aktivierungsabschnittactivation section
- 108108
- Aktivierungsmittelactivating agent
- 109109
- Fixierpadfixing pad
- 110110
- nachgiebige Schichtyielding layer
- 111111
- Verbindungsschichtconnection layer
- 200200
- zweiter Verfahrensschrittsecond process step
- 300300
- dritter Verfahrensschrittthird step
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021208761.2A DE102021208761A1 (en) | 2021-08-11 | 2021-08-11 | Connection of a sensor chip to a measurement object |
PCT/EP2022/071969 WO2023016920A1 (en) | 2021-08-11 | 2022-08-04 | Connection of a sensor chip to a measurement object |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021208761.2A DE102021208761A1 (en) | 2021-08-11 | 2021-08-11 | Connection of a sensor chip to a measurement object |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102021208761A1 true DE102021208761A1 (en) | 2023-02-16 |
Family
ID=83115350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102021208761.2A Pending DE102021208761A1 (en) | 2021-08-11 | 2021-08-11 | Connection of a sensor chip to a measurement object |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102021208761A1 (en) |
WO (1) | WO2023016920A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022205507B3 (en) * | 2022-05-31 | 2023-05-11 | Zf Friedrichshafen Ag | Connection of a sensor chip to a measurement object |
DE102022208370A1 (en) * | 2022-08-11 | 2024-02-22 | Zf Friedrichshafen Ag | Connection of a strain gauge to a measurement object |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7452800B2 (en) * | 2005-11-09 | 2008-11-18 | The Regents Of The University Of California | Bonding a non-metal body to a metal surface using inductive heating |
DE102018102918A1 (en) * | 2018-02-09 | 2019-08-14 | Endress+Hauser SE+Co. KG | Differential Pressure Sensor |
-
2021
- 2021-08-11 DE DE102021208761.2A patent/DE102021208761A1/en active Pending
-
2022
- 2022-08-04 WO PCT/EP2022/071969 patent/WO2023016920A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2023016920A1 (en) | 2023-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2023016920A1 (en) | Connection of a sensor chip to a measurement object | |
DE102014102717B4 (en) | Component arrangement with at least two components and method for producing a component arrangement | |
DE102011089608A1 (en) | Housing part for an electrical sensor and method for producing the housing part | |
WO2015121415A1 (en) | Method for manufacturing a sensor, and sensor | |
DE19539178B4 (en) | Semiconductor acceleration sensor and method for its manufacture | |
WO2023152097A1 (en) | Connection of a sensor chip to a measurement object | |
DE102022205507B3 (en) | Connection of a sensor chip to a measurement object | |
WO2022069443A1 (en) | Method for producing load-indicating connection components, and corresponding load-indicating connection component | |
DE102016112200A1 (en) | Pressure transducer | |
WO2021121863A1 (en) | Joining two components of a field device for processing and automation technology | |
DE60006365T2 (en) | ACOUSTIC SURFACE SHAFT ASSEMBLY CONNECTED TO A BASE BY A CONDUCTIVE ADHESIVE | |
EP2883024A2 (en) | Sensor having simple connection technology | |
DE102016112198A1 (en) | Pressure transducer | |
WO2024033037A1 (en) | Connecting a strain gauge to a measurement object | |
DE3703925C2 (en) | Process for producing the electrical and mechanical connection of plate-shaped bodies | |
WO2024056574A1 (en) | Connection of a sensor assembly to a measurement object | |
WO2024056572A1 (en) | Connecting a sensor assembly arranged on a mounting plate to a device under test | |
DE102022209550A1 (en) | Connection of a sensor arrangement arranged on a mounting plate with a measurement object | |
DE102021208780A1 (en) | Connection of a sensor chip to a measurement object | |
WO2024056571A1 (en) | Connection of a sensor assembly, arranged on a mounting plate, to a measurement object | |
DE19845537A1 (en) | Sensor and process for its manufacture | |
WO2021219538A1 (en) | Assembly with an electronic component which is arranged on a printed circuit board, and method for producing such an assembly | |
DE102021208776A1 (en) | Arrangement of a sensor chip on a measurement object | |
DE102019212881A1 (en) | Process for laser micro welding of two components and a composite component | |
DE102008013412B3 (en) | Manufacturing process for radiation detector module for detecting X-ray or gamma radiation, by contacting electrically conductive contact elements on a part of first and/or second contact areas of corresponding first and second components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R163 | Identified publications notified |