DE102021130775A1 - OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICE - Google Patents

Abstract

An optoelectronic component comprises a stack arrangement which has a photonic crystal (1) and an amplification medium (2). The gain medium (2) comprises a semiconductor layer sequence (20) with at least a first semiconductor layer (21), an active layer (22) and a second semiconductor layer (23). The photonic crystal (1) is electromagnetically coupled to the gain medium (2). The stacked arrangement is arranged on a substrate (3). An encapsulation layer (4) is arranged between the substrate (3) and the gain medium (2).

Description

An optoelectronic component and a method for producing an optoelectronic component are described.

Due to their small size and power spectrum, semiconductor lasers are used in a wide range of applications, for example in integrated sensor solutions. Semiconductor lasers can generally be divided into two classes: edge-emitting lasers, in which the laser light propagates parallel to a wafer surface of the semiconductor chip and is reflected or coupled out at a split edge, and surface-emitting lasers emitting lasers) in which the light propagates perpendicularly to the semiconductor wafer surface.

One category of surface-emitting lasers is set up so that laser light propagates essentially in a cavity along the wafer surface (English: in-plane laser). A realization of this type of laser is the surface-emitting photonic crystal laser (English: Photonic Crystal Surface-Emitting Laser, abbreviated: PCSEL), in which a laser resonator lying in one plane is realized with a photonic crystal structure. The same structure also reflects part of the light to form the output beam. Single-frequency operation can be achieved here, which can be advantageous for applications in 3D sensor technology and optical data transmission, for example.

Surface-emitting photonic crystal lasers, or PCSELs, can be realized, for example, by stacking functional layers. Currently, PCSELs are fabricated by growing and etching photonic crystal structures in, for example, p-AlGaAs. This has several disadvantages, such as low mobility in p-AlGaAs, required highly reflective reflectors (DBRs, Distributed Bragg reflectors) on the n-doped side, and thermal problems from substrates such as a GaAs substrate.

One object is to specify an optoelectronic component and a method for producing an optoelectronic component which allow simpler production and improved laser characteristics.

These objects are solved by the optoelectronic component and the laser according to the independent claims. Further configurations of the optoelectronic component and of the method for producing the optoelectronic component are the subject matter of the dependent claims.

In the following, it is assumed that each feature described in relation to any embodiment can be used alone or in combination with other features described below and also used in combination with one or more features of any other embodiment or any combination of another embodiment unless this is described as an alternative. Furthermore, equivalents and modifications not described below can also be used without departing from the scope of the proposed optoelectronic device and the method for manufacturing an optoelectronic device defined in the accompanying claims.

An improved concept in the field of optical components, in particular semiconductor lasers, is presented below.

According to one embodiment, an optoelectronic component includes a stacked arrangement. The stacked assembly includes a photonic crystal and a gain medium. In this case, the gain medium comprises a semiconductor layer sequence having at least a first semiconductor layer, an active layer and a second semiconductor layer. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is arranged on a substrate. In this case, an encapsulation layer is arranged between the substrate and the stack arrangement.

The encapsulation layer is, for example, a thin layer or a thin film which has been structured on the gain medium and/or the substrate by a thin film technique. To a certain extent, the encapsulation layer is a process layer that results from the production of the optoelectronic component. Their use enables an advantageous layer sequence in the semiconductor layer sequence, with which an improved laser characteristic becomes possible. During production, the encapsulation layer separates the semiconductor layer sequence and/or the substrate from the environment and protects it from environmental influences.

In accordance with at least one embodiment, the first semiconductor layer comprises at least one p-doped semiconductor layer. The second semiconductor layer includes at least one n-doped semiconductor layer.

In particular, the n-doped semiconductor layer faces or encompasses the photonic crystal. For example, the photonic crystal and the second semiconductor layer have the same semiconductor material. Among other things, this has the advantage of higher mobility compared to the p-doped semiconductor layer. The presented sequence of n-doped semiconductor layer and p-doped semiconductor layer is made possible by the encapsulation layer.

According to at least one embodiment, the active layer comprises a multiple quantum well structure. These quantum wells are an active medium and are designed to emit electromagnetic waves through stimulated emission when suitably excited.

In accordance with at least one embodiment, the encapsulation layer is set up to electrically conductively connect the stacked arrangement to the substrate. In addition to the encapsulation of the semiconductor layer sequence and/or substrate, the encapsulation enables contacting via the substrate by means of suitable structuring.

In accordance with at least one embodiment, at least one metal layer is structured into the encapsulation layer. The metal layer mediates the electrical contact via the substrate.

According to at least one embodiment, a superlattice, which comprises a layer sequence of thin layers that repeat periodically, is arranged on the photonic crystal structure. The superlattice provides a planar surface and reduces the influence of possible defects on the operation of the optoelectronic component, in particular as a laser.

In accordance with at least one embodiment, the optoelectronic element comprises a first partial encapsulation layer with a first metal layer on the epitaxial semiconductor layer sequence. In addition, the encapsulation layer comprises a second partial encapsulation layer with a second metal layer on the substrate. The gain medium is mounted on the substrate in such a way that the partial encapsulation layers form the encapsulation layer and the metal layers come to lie on top of one another and thus form the metal layer.

The partial encapsulation layers can sometimes be deposited only on the substrate or only on the epitaxial semiconductor layer sequence. Partial encapsulation layers can advantageously be deposited both on the substrate and on the epitaxial semiconductor layer sequence. Finally, the encapsulation layer is formed by mounting the epitaxial semiconductor layer sequence on the substrate.

A method for producing an optoelectronic component is also specified. All features disclosed for the optoelectronic component are also disclosed for the method, and vice versa.

In accordance with at least one embodiment, a method for producing an optoelectronic component includes the following steps. First, an amplification medium with an epitaxial semiconductor layer sequence with at least a first semiconductor layer, an active layer and a second semiconductor layer is provided on an auxiliary carrier. As a result, an encapsulation layer is deposited on the substrate and/or on the epitaxial semiconductor layer sequence. The gain medium is mounted on the substrate such that the encapsulation layer is arranged between the substrate and the epitaxial semiconductor layer sequence. Finally, the auxiliary carrier is removed.

The encapsulation layer is, for example, a thin layer or a thin film which has been structured on the gain medium and/or the substrate by a thin film technique. The encapsulation layer enables an advantageous layer sequence in the semiconductor layer sequence, with which an improved laser characteristic becomes possible. During production, the encapsulation layer separates the semiconductor layer sequence and/or the substrate from the environment and protects it from environmental influences.

According to at least one embodiment, a metal layer is patterned into the encapsulation layer. The metal layer enables an electrical connection between the substrate and the semiconductor layer sequence.

In accordance with at least one embodiment, a first partial encapsulation layer having a first metal layer is deposited on the epitaxial semiconductor layer sequence. A second partial encapsulation layer with a second metal layer is deposited on the substrate. The gain medium is mounted on the substrate such that the partial encapsulation layers form the encapsulation layer and the metal layers overlie one another to form the metal layer.

According to at least one embodiment, a barrier layer is deposited on the first and/or the second metal layer.

According to at least one embodiment, the partial encapsulation layers have different height profiles. The mounting of the epitaxial semiconductor layer sequence on the substrate can be guided by the different height profiles. For example, the encapsulation layers can be structured with height profiles that are inverse to one another, so that they self-center the assembly to a certain extent.

In accordance with at least one embodiment, a photonic crystal is regrown into the epitaxial semiconductor layer sequence after the encapsulation layer has been arranged between the substrate and the epitaxial semiconductor layer sequence. The epitaxial semiconductor layer sequence mounted on the substrate can subsequently be further processed. In particular, the auxiliary carrier is removed for this purpose. This opens up the second semiconductor layer for further process steps, which was not possible with previous methods. For example, the photonic crystal can be structured into the second semiconductor layer, in particular regrown.

In accordance with at least one embodiment, the method steps are carried out at the wafer level and a multiplicity of optoelectronic components are thus provided with the encapsulation layer in parallel. Finally, the wafer is separated into individual optoelectronic components. Alternatively, the method steps can be carried out with at least one isolated optoelectronic component.

According to at least one embodiment, a superlattice, which comprises a layer sequence of thin layers that repeat periodically, is arranged on the photonic crystal structure.

Further advantageous embodiments and developments of the optoelectronic component and the method for producing the optoelectronic component result from the exemplary embodiments described below in connection with the figures.

• 1 eine beispielhafte Ausführungsform eines optoelektronischen Bauelements,
• 2 eine beispielhafte Ausführungsform eines Verfahrens zum Herstellen eines optoelektronischen Bauelements,
• 3A, 3B jeweils beispielhafte Ausführungsformen des zweiten Verfahrensabschnitts,
• 4 eine weitere beispielhafte Ausführungsform eines optoelektronischen Bauelements, und
• 5 eine weitere beispielhafte Ausführungsform eines optoelektronischen Bauelements.

Show it:

• 1 an exemplary embodiment of an optoelectronic component,
• 2 an exemplary embodiment of a method for producing an optoelectronic component,
• 3A , 3B respective exemplary embodiments of the second method section,
• 4 a further exemplary embodiment of an optoelectronic component, and
• 5 a further exemplary embodiment of an optoelectronic component.

1 shows an exemplary embodiment of an optoelectronic component. The optoelectronic component comprises a stack arrangement (English: stack) which has a photonic crystal 1 and a gain medium 2 . The stacked arrangement is arranged on a substrate 3 . Furthermore, an encapsulation layer 4 is arranged between the substrate and the stack arrangement.

The photonic crystal 1 comprises, for example, a thin layer of semiconductor material, for example gallium arsenide, GaAs, gallium nitride, GaN, or indium phosphide, InP, which is transparent to an electromagnetic wave to be emitted, i.e. is not or only slightly absorbing. The electromagnetic wave to be emitted is, for example, in the infrared, IR, ultraviolet, UV, or visible, VIS, part of the electromagnetic spectrum. The photonic crystal comprises a photonic structure 11, which represents a periodic structure of the refractive index and makes it possible to guide, filter and/or reflect wavelength-selectively electromagnetic waves through optical processes such as diffraction and interference. The periodic photonic structure determines or defines, for example, the emission direction, wavelength and divergence of the electromagnetic wave that can be emitted with the optoelectronic component.

The photonic structure 11 comprises one- or two-dimensionally arranged structure elements 12 (voids), which are arranged in a pattern (eg a square or triangular pattern) in such a way that they form the photonic structure, which extends over a certain direction or area extends. The structural elements may include air holes or dielectric material. As a two-dimensional photonic structure, it functions as a kind of lateral cavity. For example, the photonic structure is characterized by the distance (pitch) between the structural elements and their filling factors, and other parameters. In the drawing, the expansion of the photonic crystal in one plane is not shown. A two-dimensional distribution of the periodic photonic structure results, for example. In principle, however, the photonic crystal 1 can also extend in one direction, resulting in a one-dimensional distribution of the periodic photonic structure.

The gain medium 2 comprises an epitaxial semiconductor layer sequence 20 with a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23. The first semiconductor layer has a p-doped semiconductor layer and the second semiconductor layer has an n-doped semiconductor layer. For example, the p-type semiconductor layer includes P-AlGaAs and the n-type semiconductor layer includes N-AlGaAs. The active layer comprises a multiple quantum well structure. These quantum wells are an active medium and are designed to emit electromagnetic waves through stimulated emission when suitably excited. The active layer is arranged in the semiconductor layer sequence between the first and second semiconductor layers.

In addition, a Bragg mirror 24 (abbreviated to DBR for distributed Bragg reflector) is structured in the first semiconductor layer 21 . The Bragg mirror comprises a layer sequence of alternating, thin layers with different refractive indices, for example layers made of dielectrics.

The semiconductor layer sequence 20 of the amplification medium 2 forms a common waveguide which is to a certain extent delimited by two delimiting layers. The gain medium 2 is delimited by the photonic crystal 1 on the one hand. On the other hand, the gain medium is delimited by the encapsulation layer 4 between the substrate 3 and the semiconductor layer sequence.

The substrate 3 comprises, for example, gallium arsenide GaAs, silicon, germanium or sapphire or consists of gallium arsenide, silicon, germanium or sapphire. In particular, the substrate is transparent to electromagnetic radiation that is generated by stimulated emission by means of the active layer 22 of the semiconductor layer sequence 20 . Here and below, transparent means that at least 80%, preferably at least 90%, of the electromagnetic radiation coupled into the substrate is transmitted through the substrate.

The encapsulation layer 4 is a thin layer or film patterned on the gain medium 2 and/or the substrate 3 by a thin film technique. To a certain extent, the encapsulation layer is a process layer that results from the production method proposed here. Furthermore, a metal layer 41 is structured into the encapsulation layer. The encapsulation layer comprises, for example, dielectric material such as SiOx, AlOx, SiNx or sputtered silicon. The metal layer is set up to electrically conductively connect the gain medium to the substrate, for example if the optoelectronic component is to be contacted from the substrate side. For this purpose, a first electrode can be formed on the substrate, for example a p-contact (not shown in the figure).

A second electrode 13 , for example an n-contact, is also arranged on the photonic crystal 1 . The electrode comprises, for example, a material (for example Au or Al) which is reflective of the electromagnetic wave to be emitted. Optionally, as illustrated herein, the electrode may be comprised of an insulator configured in the form of an aperture 14 to provide a current opening.

The photonic crystal 1 is electromagnetically coupled to the gain medium 2 . The term “electromagnetically coupled” denotes a spatial proximity which, during operation of the optoelectronic component (for example as a laser), leads to an evanescent field forming between the photonic crystal and the active layer 22 (for example multiple quantum well structure).

The optoelectronic component can be excited to stimulated emission and to emit electromagnetic waves as laser radiation by means of the two electrodes. Laser amplification by stimulated emission can thus be achieved by coupling the photonic structure 11 to the active layer 22 (multiple quantum well structure) below the photonic layer within the evanescent fields. The Bragg mirror 24 supports the emission on the side of the photonic crystal and through the aperture 14 by reflecting the laser radiation. This is indicated by an arrow in the figure.

2 FIG. 1 shows an exemplary embodiment of a method for producing an optoelectronic component. The figure shows an overview with five process steps. The method shown is particularly suitable for producing the optoelectronic component that is associated with 1 was discussed.

In a first step of the method, the gain medium 2 is grown on an auxiliary carrier 5 . This is done by epitaxially growing the semiconductor layer sequence 20. For this purpose, the second semiconductor layer 23, in particular as an n-doped semiconductor layer, is first grown. As a result, the active layer 22 and finally the first semiconductor layer 21, in particular as a p-doped semiconductor layer, are grown. In this exemplary embodiment, the Bragg mirror 24 structured in the first semiconductor layer 21.

In a second stage of the method, the encapsulation layer 2 is applied using a thin-layer technique. The encapsulation layer can be structured on the gain medium 2 (the first semiconductor layer or the Bragg mirror) and/or the substrate 3 . For example, a first partial encapsulation layer 42 is patterned on the gain medium and a second partial encapsulation layer 43 on the substrate. The substrate is then mounted on the gain medium (on the side of the first semiconductor layer or the Bragg mirror). Further details are the following description of 3A and 3B refer to.

In the second method step, the auxiliary carrier 5 is also removed and the second semiconductor layer 23, for example an n-doped semiconductor layer, is thus uncovered as the outer layer of the epitaxial semiconductor layer sequence 20. The gain medium with the epitaxial semiconductor layer sequence is now arranged on the substrate. The auxiliary carrier can be removed mechanically, for example by means of grinding and polishing (e.g. CMP) or dry etching using plasma processes down to a target depth.

In a third method step, the gain medium 2 is structured. For this purpose, structure elements 12 are etched into the second, to a certain extent uncovered, semiconductor layer 23, for example the n-doped semiconductor layer. The structural elements are arranged in one or two dimensions, for example, and thus form the photonic structure 11.

In a fourth method step, the photonic structure 11 is regrown with the material of the second semiconductor layer (English: lateral overgrowth/regrowth). This is how the photonic crystal is finally formed. As in the following description of the 3A and 3B will be carried out later, this part of the process corresponds to regrowth after bonding. A first contacting of the optoelectronic component takes place, for example, as early as in the second method step by the structuring of the encapsulation layer and connection to an electrode of the substrate (not shown).

An electrode 13 is arranged on the photonic crystal 1 in a fifth method step. The electrode is an n-contact, for example. The electrode comprises, for example, a material (for example Au or Al) which is reflective of the electromagnetic wave to be emitted. Optionally, as illustrated herein, the electrode may be comprised of an insulator configured in the form of an aperture 14 to provide a current opening. For the aperture, the second semiconductor layer can already be structured by etching in the third method step or, alternatively, in this fifth method step.

Optionally, an antireflection layer can be arranged, for example on the substrate (not shown).

The 3A and 3B each show exemplary embodiments of the second method section. Both examples are based on thin-film technology.

3A shows the gain medium with the epitaxial semiconductor layer sequence grown on the auxiliary carrier in the first method step. The encapsulation layer 4 is first deposited as a partial layer on the epitaxial semiconductor layer sequence using thin-film technology. This first partial encapsulation layer 42 is structured in the sense that it has an area in which a first metal layer 44 is deposited. The encapsulation layer is deposited on a surface of the substrate 3 as a second partial layer 43 in a similar manner. This further partial encapsulation layer is structured analogously and includes an area in which a second metal layer 44 is deposited.

The components provided with partial encapsulation layers 42, 43 in the sub-steps mentioned above, ie substrate 3 and gain medium 2, are connected to one another in a further sub-step. The two partial metal layers come to rest on top of each other and are connected. This finally creates the encapsulation layer. In addition, an area is produced which connects the two partial metal layers 44, 45 to form a metal layer 41. This metal layer is electrically conductive and thus connects the gain medium or the epitaxial semiconductor layer sequence 20 to the substrate.

The partial encapsulation layers 42, 43 encapsulate the substrate 3 and the gain medium 2 from environmental influences during the course of the process. This makes it possible to process the two components in one reactor or wafer process without allowing contamination or imperfections. The encapsulation layer comprises, for example, dielectric material such as SiOx, AlOx, SiNx, AlNx, (sputtered) Si or refractory point metal such as Md or tungsten. The metal layer includes, for example, Au, Al or InX. The metal layer can, for example, with the thin-film technology as in the Encapsulation layer are structured so that they have a lateral extent corresponding to the aperture 14 substantially. The lateral extent of the metal layer can alternatively correspond to the extent of the substrate or wafer. In such cases, the metal layer can also be deposited without further dielectric encapsulation materials and thus forms the encapsulation layer.

3B also shows the gain medium 2 with the epitaxial semiconductor layer sequence 20 grown on the auxiliary carrier 5 in the first process step and the substrate 3. Deviating from the embodiment of FIG 3B the encapsulation layer 4 or the partial encapsulation layers 42, 43 are structured and deposited differently. The metal layers 44, 45 are each provided with a barrier layer 46, which is also deposited using thin-film technology. The barrier layer comprises, for example, InNi or Au with AuTiPt. In particular, the barrier layer serves as a diffusion barrier.

In addition, the partial encapsulation layers 42, 43 can be deposited with different height profiles. The figure shows two height profiles, for example, which are also essentially inverse to one another. In addition, the sizes, for example the respective lateral extension of the partial metal layers 44, 45 can be different. In this way, when connecting the partial encapsulation layers 42, 43 to the encapsulation layer 4, self-centering can be used to a certain extent. In this way, complex adjustment steps can be avoided or reduced.

The method presented here can be carried out at the wafer level and thus provide a large number of optoelectronic components with the encapsulation layer in parallel. The wafer can then be separated into individual optoelectronic components. Alternatively, the method can be carried out with optoelectronic components that have already been separated.

4 FIG. 1 shows a further exemplary embodiment of an optoelectronic component. In the case of production at the wafer level before the singulation, as indicated in the figure, there is an area without a metal layer at the edge of the wafer, for example. The encapsulation layer located there can have a significant lateral extension, which can be up to 2 to 10 mm wide.

The edge 31 of the wafer can be provided with a further encapsulation layer in order to encapsulate the wafer or the optoelectronic components. This lateral encapsulation layer 47 can have a plurality of partial layers, which are produced, for example, by atomic layer deposition (ALD) from a rear side of the substrate or from the auxiliary carrier. In this way, the edge is also encapsulated. By removing the auxiliary carrier 5, only the lateral encapsulation layer then remains, for example.

5 FIG. 1 shows a further exemplary embodiment of an optoelectronic component. In the fourth process step, the photonic crystal structure is regrown with the material of the second semiconductor layer (English: lateral overgrowth / regrowth). In this process step, the material can, for example, grow together (coalescence). The surface of the photonic crystal structure resulting from the regrowth may be imperfections or the like rough.

The optoelectronic component shown comprises a superlattice 15 (superlattice) which comprises a layer sequence of thin layers which repeat periodically and is arranged on the photonic crystal structure. The superlattice can be produced, for example, after regrowth by molecular beam epitaxy, chemical vapor deposition (CVD), or metal organic chemical vapor phase epitaxy (MOVPE). Alternatively, or additionally, the photonic crystal structure and/or the superlattice can be planarized by chemical mechanical polishing (CMP). Any imperfections that may occur will thus not affect the operation of the optoelectronic component, in particular as a laser, or will at least have a reduced effect.

The above description explains some features in concrete detail. These are not to be construed as limitations on the scope of the improved concept or what can be claimed, but rather as example descriptions of features that are only specific to certain embodiments of the improved concept. Certain features that are described in this description in connection with individual embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment may also be implemented in multiple embodiments separately or in any suitable sub-combination. In addition, although features are described above as working together in certain combinations and even originally claimed as such, one or more features from a claimed combination are in some cases taken out of the combination, and the claimed combination may be directed to a sub-combination or variation of a sub-combination.

Although the drawings show acts in a particular order, it is not to be understood that those acts must be performed in the order shown or in the sequential order, or that all acts shown must be performed in order to obtain desired results . Under certain circumstances, different orders or parallel processing can be advantageous.

A number of implementations have been described. Nevertheless, various modifications can be made without departing from the spirit and scope of the improved concept. Accordingly, other implementations also fall within the scope of the claims.

reference list

1

photonic crystal

2

gain medium

3

substrate

4

encapsulation layer

5

auxiliary carrier

11

photonic structure

12

structural elements

13

electrode

14

aperture

15

superlattice

20

epitaxial semiconductor layer sequence

21

first semiconductor layer

22

active layer

23

second semiconductor layer

24

Bragg mirror

31

edge (of the wafer)

41

metal layer

42

partial encapsulation layer

43

partial encapsulation layer

44

metal layer

45

metal layer

46

barrier layer

47

lateral encapsulation layer

Claims (15)

An optoelectronic component comprising a stack arrangement having a photonic crystal (1) and a gain medium (2), wherein: - the gain medium (2) comprises a semiconductor layer sequence (20) with at least a first semiconductor layer (21), an active layer (22) and a second semiconductor layer (23), - the photonic crystal (1) is electromagnetically coupled to the gain medium (2), - the stack arrangement is arranged on a substrate (3), and - An encapsulation layer (4) is arranged between the substrate (3) and the gain medium (2). The optoelectronic component according to the preceding claim, wherein: - the first semiconductor layer (21) has at least one p-doped semiconductor layer, and - The second semiconductor layer (23) has at least one n-doped semiconductor layer. The optoelectronic device according to any one of the preceding claims, wherein the active layer (22) comprises a multiple quantum well structure. The optoelectronic component according to one of the preceding claims, wherein the encapsulation layer (4) is set up to electrically conductively connect the stacked arrangement to the substrate (3). The optoelectronic component according to one of the preceding claims, wherein at least one metal layer (41) is structured into the encapsulation layer (4). The optoelectronic component according to one of the preceding claims, wherein a superlattice (15) which comprises a layer sequence of thin layers which are repeated periodically is arranged on the photonic crystal (1). The optoelectronic component according to one of the preceding claims, further comprising: - a first partial encapsulation layer (42) with a first metal layer (44) on the epitaxial semiconductor layer sequence (20), - a second partial encapsulation layer (43) with a second metal layer (45) on the substrate; wherein - the gain medium (2) is mounted on the substrate (3) such that the partial encapsulation layers (42, 43) form the encapsulation layer (4) and the metal layers (44, 45) come to lie on top of one another and thus form the metal layer (41). A method for producing an optoelectronic component, comprising the steps: - Providing an amplification medium (2) with an epitaxial semiconductor layer sequence (20) with at least a first semiconductor layer (21), an active layer (22) and a second semiconductor layer (23) on an auxiliary carrier (5), - depositing an encapsulation layer (4) on a substrate (3) and/or on the epitaxial semiconductor layer sequence (20), - Mounting the gain medium (2) on the substrate (3) so that the encapsulation layer (4) is arranged between the substrate (3) and the epitaxial semiconductor layer sequence (20), - Remove the auxiliary support (5). The method according to the preceding claim, wherein a metal layer (41) is patterned into the encapsulation layer (4). The method according to any one of the preceding claims, wherein - a first partial encapsulation layer (42) with a first metal layer (44) is deposited on the epitaxial semiconductor layer sequence (20), - a second partial encapsulation layer (43) with a second metal layer (45) is deposited on the substrate (3), - the amplification medium (2) is mounted on the substrate (3) in such a way that the partial encapsulation layers form the encapsulation layer (4) and the metal layers come to lie on one another and thus form the metal layer (41). The method according to any one of the preceding claims, wherein a barrier layer (46) is deposited on the first and/or the second metal layer (44, 45). The method according to any one of the preceding claims, wherein the partial encapsulation layers (42, 43) have different height profiles. The method according to any one of the preceding claims, wherein a photonic crystal (1) is regrown into the epitaxial semiconductor layer sequence (20) after the encapsulation layer (4) has been arranged between the substrate (3) and the epitaxial semiconductor layer sequence (20). The method according to any one of the preceding claims, wherein the method steps - Be carried out at the wafer level and a large number of optoelectronic components are thus provided with the encapsulation layer in parallel and the wafer is singulated into individual optoelectronic components, or - Be carried out with at least one already isolated optoelectronic component. The method according to any one of the preceding claims, wherein a superlattice (15), which comprises a layer sequence of thin layers which are repeated periodically, is arranged on the photonic crystal (1).

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