DE102020212114A1 - Method for determining a sensitivity of a Hall sensor element and Hall sensor with at least one Hall sensor element - Google Patents

Abstract

A method 100 for determining a sensitivity of a Hall sensor element 20, taking into account an active relationship between the temperature dependence of the sensitivity and the temperature dependence of the operating variable of the Hall sensor element 20, comprises the following steps: determining 110 a reference sensitivity So and a reference value X0 of the operating variable X of the Hall sensor element; determining 120 an instantaneous value X1 of the operating variable X of the Hall sensor element based on a control signal of the Hall sensor element; and determining 130 the sensitivity of the Hall sensor element based on the reference sensitivity S0, on the reference value X0 of the operating variable X, on the determined instantaneous value X1 of the operating variable X and on the active relationship.

Description

The present invention relates to a method for determining the (magnetic) sensitivity of a Hall sensor element and to a Hall sensor with at least one Hall sensor element and with a processing device for carrying out the method. In particular, the present invention relates to the determination of a resistance-normalized sensitivity of a Hall sensor, which has one or more Hall sensor elements, the instantaneous sensitivity of the respective Hall sensor element being indirectly measurable or detectable by linking Hall sensor resistance and Hall sensor sensitivity. This enables a sensitivity synchronization with Hall sensors with a plurality of Hall sensor elements, such as. B. in a 2D or 3D Hall sensor to achieve. Furthermore, an indirect measurement of the sensitivity in Hall sensors in general, i.e. in absolute value-based measurement systems such as current sensors, is also made possible.

The property of Hall sensors or individual Hall sensor elements such. B. their magnetic sensitivity depends on a number of factors and influencing variables that affect the magnetic field sensor. As early as during the production of magnetic field sensors, any process and manufacturing tolerances of the CMOS process used (CMOS = Complementary Metal Oxide Semiconductor) with the resulting doping profiles, mask accuracy and adjustment tolerances can affect the properties of the magnetic field sensors and thus influence and define them. Furthermore, parameters in later operation, such. B. influence and define the sensor temperature due to the ambient temperature, the properties of the magnetic field sensor and in particular its sensitivity. Ambient temperature changes (within the sensor operating temperature range) can result in sensor sensitivity changes of up to ±20%. In the special case of 2D or 3D Hall sensors, there is also the fact that the temperature influences the sensitivity of the lateral and vertical sensors differently, with the difference in sensitivity drift between a vertical sensor (e.g. a Z sensor ) and a lateral sensor (X/Y Hall sensor) in the range of ± 15%.

In the context of the present description, the individual sensor elements sensitive to magnetic fields are referred to as Hall sensor elements, while the resulting sensor arrangement with at least one or also a plurality of individual Hall sensor elements and, for example, with the associated control circuit and (optional) the evaluation circuit is referred to as Hall sensor. The drive circuit with the optional evaluation circuit is also referred to as a processing device.

To determine the sensitivity of a Hall sensor, a magnetic field with a known magnetic flux density is generated via a coil at the location of the Hall sensor element or the Hall sensor elements of the Hall sensor. The sensitivity of the Hall sensor element can then be inferred from the change in the output signal of the respective Hall sensor element. In the case of a magnetic field sensor based on Hall sensor elements, a change in the Hall voltage, which can be caused by a change in the magnetic flux density in the sensor element, can be used to determine the sensitivity of the respective Hall sensor element.

So far, the sensitivity of individual Hall sensor elements or of Hall sensors with (vertical and/or horizontal) Hall sensor elements has been measured in series tests at different temperatures with external Helmholtz coil pairs and stored as retrievable values in an accessible memory for later correction. The number of required temperature points and the increments between these temperature points depend on the required residual tolerance in the sensitivity of the Hall sensor elements. However, this sensitivity measurement or the calibration over the temperature with external Helmholtz coils makes such a series test very time-consuming, which means that such a series test is expensive, complex and inflexible.

Coils located near the Hall sensor elements, which can for example be integrated on the Hall sensor chip or embedded in the circuit board for the Hall sensor elements, are a first approach to measuring the sensitivity without external Helmholtz coil pairs. These integrated coils generate a magnetic field defined in terms of flux density and frequency in the respective Hall sensor element. In addition to simplifying the series test setup, these arrangements allow the sensor sensitivity to be measured in the application. However, if an external magnetic field of a similar frequency is superimposed, this cannot be distinguished from the internally generated magnetic field and the sensitivity measurement carried out is incorrect. Thus, such a calibration method with integrated coils works, for example, only in magnetically defined environments or can only be used there. In the patent publications DE102010028390 B4 , EP 2490037 B1 and EP 3341746 B1 integrated conductors or coils for sensitivity determination in series tests without external Helmholtz coils are described.

There is therefore a need for a concept for measuring the sensitivity of Hall sensor elements that can be implemented with as little effort as possible, ie. H. can be carried out and implemented as far as possible without external or even integrated coils.

Based on the prior art presented, the object on which the present invention is based is to create an improved method for determining a sensitivity, ie the instantaneous sensitivity, of a Hall sensor element or a Hall sensor with a plurality of Hall sensor elements that is as uncomplicated as possible, fast, accurate and, in particular, can be carried out in the application (in situ).

This object is solved by the independent patent claims. The object is thus achieved by the method for determining a sensitivity of a Hall sensor element according to patent claims 1, 18 and 23 and by the Hall sensor according to patent claims 16 and 30.

Developments according to the invention are defined in the independent patent claims.

According to one exemplary embodiment, a method for determining a sensitivity of a Hall sensor element, taking into account a functional relationship between the temperature dependency of the sensitivity and the temperature dependency of an operating variable that is dependent on the electrical resistance value of the Hall sensor element, includes the following steps: determining a reference sensitivity and a reference value of the operating variable of the Hall sensor element, determining a Instantaneous value of the operating variable of the Hall sensor element based on a control signal of the Hall sensor element, and determining the sensitivity of the Hall sensor element based on the reference sensitivity, on the reference value of the operating variable, on the instantaneous value of the operating variable and on the functional relationship..

According to one embodiment, a Hall sensor includes at least one Hall sensor element; and a processing device which is designed to carry out the method for determining a sensitivity of a Hall sensor element.

According to one exemplary embodiment, a method for determining a sensitivity of a Hall sensor element includes the following steps: providing a model F(X,T) for the sensitivity with the operating variable of the Hall sensor element and with the temperature as a variable, the operating variable being dependent on the electrical resistance value of the sensor element , determining an instantaneous value of the operating variable of the Hall sensor element based on a control signal of the Hall sensor element, determining the instantaneous temperature of the Hall sensor element, and determining the instantaneous sensitivity of the Hall sensor element based on the value of the model, which is associated with the instantaneous temperature value and the instantaneous value of the operating variable.

According to one exemplary embodiment, a method for determining a sensitivity of a Hall sensor element includes the following steps: providing a model for a sensitivity-operating variable relationship from sensitivity and operating variable of the Hall sensor element with temperature as a variable, the operating variable being dependent on or derivable from the electrical resistance value of the sensor element , determining an instantaneous value of the operating variable of the Hall sensor element based on a control signal of the Hall sensor element, determining the instantaneous temperature of the Hall sensor element, and determining the instantaneous sensitivity of the Hall sensor element based on the value for the sensitivity-operating variable relationship assigned to the instantaneous temperature value and the Instantaneous value of company size.

According to one exemplary embodiment, a Hall sensor comprises (at least) a Hall sensor element; and a processing device which is designed to carry out the method for determining a sensitivity of a Hall sensor element.

The core idea of the present invention is that a sensitivity measurement or a calibration of a Hall sensor element or Hall sensor (with at least one Hall sensor element) can be carried out effectively by a known (= e.g. determined or predetermined) effective relationship between the temperature dependence of the sensitivity of the respective Hall sensor element and the temperature dependence of the electrical resistance, such as the internal resistance or Hall resistance, or one of the electrical resistance (R _Hall = R ₁ ) of the Hall sensor element (20) dependent or derived operating variable (X) of the Hall sensor element is utilized.

The operating variable dependent on the electrical resistance value of the Hall sensor element can now be, for example, (1.) the electrical resistance value of the Hall sensor element, or can also be (2.) the electrical conductivity value (or conductance) of the Hall sensor element, or can be (3.) voltage-controlled operation (with a specified or constant supply voltage), the (resulting, impressed) supply current of the Hall sensor element, or (4.) in current-controlled operation (with a specified or constant supply current), the (resulting, impressed) supply voltage of the Hall sensor element, or (5.) in free-running operation, the electrical resistance value or the electrical conductivity value of the Hall sensor element (according to Ohm's law R = U / I) based on the supply current and the supply voltage of the Hall sensor element (at the operating point of the Hall sensor element).

The well-known interrelationship between the temperature dependency of the sensitivity of the Hall sensor element and the temperature dependency of the resistance of the Hall sensor element is therefore used, simply by determining the operating variable of the Hall sensor element that is dependent or derived from the instantaneous electrical resistance value of the Hall sensor element or the instantaneous resistance value of the Hall sensor element itself to close the instantaneous sensitivity of the Hall sensor element, this variable being determined by measuring or detecting the instantaneous control signal (=the impressed signal, eg supply current or supply voltage) to the Hall sensor element. Furthermore, this operating variable can also be determined according to the respective operating mode by measuring or detecting the instantaneous control signals (e.g. supply current and supply voltage) to the Hall sensor element in order to be able to deduce the instantaneous sensitivity of the Hall sensor element.

Thus, the sensitivity measurement or calibration of a Hall sensor element can be carried out with knowledge of the functional relationship between the temperature dependence of the sensitivity of the Hall sensor element and the temperature dependence of the resistance of the Hall sensor element (in general) or the operating variable dependent on it solely by determining the instantaneous electrical resistance value or the of the instantaneous electrical resistance value (R _Hall = R ₁ ) of the Hall sensor element (20) dependent or derived operating variable (X) of the Hall sensor element.

The present concept is characterized by the fact that the (current) temperature-dependent sensitivity of a Hall sensor element can be observed or mapped in its temperature-dependent electrical resistance and can therefore be measured or derived "directly" or "indirectly" via the electrical resistance. The basis of the present concept is therefore the linkage or the functional relationship of the sensitivity of the Hall sensor with its electrical resistance value and its temperature dependencies.

The relationship or ratio between the temperature-dependent sensitivity of a Hall sensor element and its temperature-dependent electrical resistance or the operating variable of the Hall sensor element that is dependent or derived from the instantaneous electrical resistance value of the Hall sensor element is considered to be an effective connection.

According to one exemplary embodiment, the present concept relates to a known, determined or specified causal relationship, i.e. to a defined relationship, between the temperature dependency of the (magnetic) sensitivity and the temperature dependency of the operating variable of the Hall sensor element, with the sensitivity of the Hall element and the operating variable of the Hall elements change over temperature, and the temperature-related change in sensitivity and the temperature-related change in the operational magnitude of the Hall element are in a known relationship to one another. This causal relationship or this predetermined relationship is now used to change the operating variable of the Hall element, i. H. by comparing the instantaneous value of the operating variable of the Hall sensor element with a reference value of the operating variable of the Hall sensor element, to infer the instantaneous sensitivity of the Hall sensor element, d. H. to the possible change from the reference sensitivity value of the hall sensor element.

The value of the reference sensitive and the reference value of the operating variable of the Hall sensor element are, for example, at a reference temperature value, for example a constant temperature value, determined. If the instantaneous value of the operating variable of the Hall sensor element is now determined based on the control signal (supply signal) present at the Hall sensor element or the control signals (supply signals) present at the Hall sensor element, the (instantaneous) sensitivity of the Hall sensor element can now be determined directly from this based on the reference sensitivity, the reference value of the Operating variable and the determined instantaneous value of the operating variable are determined, with the functional relationship between the temperature dependence of the sensitivity and the temperature dependence of the operating variable of the Hall sensor element being taken into account.

Since the manufacturing technology, the respective structure and the semiconductor materials used have an influence on the interrelationship between the temperature dependence of the sensitivity and the temperature dependence of the resistance or the operating variable of a Hall sensor element derived from it, the interrelationship can be determined for each type of Hall sensor element and, for example, as a calculation rule to be provided.

According to one embodiment, for example, the Hall sensitivity of a Hall sensor element can be proportional to the charge carrier mobility, while the Hall resistance of the Hall sensor element can be indirectly proportional to the charge carrier mobility in the semiconductor material of the Hall sensor element.

With such an active relationship, a resistance-normalized sensitivity of the Hall sensor element can be defined, for example, which is specified as the product of the reference sensitivity and the electrical reference resistance value of the Hall sensor element.

Such a normalization of the sensitivity of the Hall sensor element can therefore also be applied to the Hall sensor element's operating variable(s) which is dependent or derived from the instantaneous electrical resistance value of the Hall sensor element, so that "in general" a Hall sensor element sensitivity which is normalized to an operating variable can be provided.

In accordance with the above operating states (1.), (3.) and (5.), the operating variable-normalized sensitivity in the form of the operating variable-sensitivity product S _XN of the Hall sensor element as a product of the reference sensitivity So and the reference value X ₀ of the operating variable X of the respective Hall sensor element are provided, in which case the instantaneous sensitivity of the Hall sensor element can be determined based on the quotient between the operating variable sensitivity product S _XN and the instantaneous value of the operating variable.

Furthermore, according to the above operating states (2.) and (4.), the operating variable-normalized sensitivity can be provided in the form of the operating variable sensitivity quotient S _XN of the Hall sensor element as the quotient of the reference sensitivity S ₀ and the reference value X ₀ of the operating variable X of the respective Hall sensor element be, in which case the instantaneous sensitivity of the Hall sensor element can be determined based on the product between the operating variable sensitivity quotient S _XN and the instantaneous value of the operating variable.

The above exemplary embodiments now have in common that the instantaneous sensitivity of the Hall sensor element, i. H. the (temperature-dependent) deviation of the instantaneous sensitivity compared to the reference sensitivity value can be determined according to the respective operating mode based on the applied control signal or on the control signals (e.g. according to Ohm's law) of the Hall sensor element, whereby the sensitivity determination of the Hall sensor element is independent of calibration magnetic fields etc. extremely efficiently and can be done quickly.

According to a further exemplary embodiment of the concept according to the invention, the known, determined or predetermined effective relationship between the temperature-dependent sensitivity and the temperature-dependent electrical resistance or the operating variable of the Hall sensor element that is dependent or derived from the electrical resistance of the Hall sensor element can now be “modeled” mathematically, i.e. the relationship between the temperature-related change in sensitivity and the temperature-related change in electrical resistance or the dependent or derived operating variable of the Hall element (= sensitivity-resistance relationship) can be mapped mathematically, for example with temperature as a variable.

According to the present concept, a (temperature-dependent) model f _SRN (T) (= a mathematical function) for a sensitivity-resistance relationship (= resistance-normalized sensitivity sensitivity) from sensitivity and electrical resistance or sensitivity-operating variable relationship (= operating variable-normalized sensitivity) from sensitivity and derived operating variable of the Hall sensor element with the temperature T as a variable.

This can be done, for example, by determining, ie retrieving, providing or measuring, a sensitivity value S _N and an electrical resistance value R _N or a value of the operating variable X _N of the Hall sensor element at a plurality of temperature values T _N . This corresponds to a calibration at the temperature _values T ₁ , T ₂ , derived operating variable of the Hall sensor element with the temperature T as a variable (based on the measured values of the electrical resistance value or the derived operating variable and the sensitivity at the different temperatures) is determined.

Alternatively, for example, it is also possible to set up the model f _SRN (T) purely mathematically if a "model" of the Hall sensor element based on the manufacturing technology used, the respective structure and the semiconductor materials used, etc. for the sensor element is available.

According to the present concept, the instantaneous electrical resistance value or the instantaneous value of the operating variable of the Hall sensor element is now determined according to the operating mode based on an impressed control signal (= supply signal) or the control signals (= supply signals) in the Hall sensor element, with the current temperature of the active area of the Hall sensor element (directly or indirectly) is determined. A direct determination of the temperature means, for example, a temperature detection of the active region, while an indirect determination of the temperature means, for example, the detection of a physical quantity that can be converted into the instantaneous temperature or from which the instantaneous temperature can be derived. Based on the value for the sensitivity-resistance relationship or for the sensitivity-operating variable relationship, which is assigned to the instantaneous temperature value, and the instantaneous value of the electrical resistance value or the operating variable dependent on it, the instantaneous sensitivity of the Hall sensor element (as an absolute value) are determined.

• 1 ein schematisches Ablaufdiagramm eines Verfahrens zum Bestimmen einer momentanen Empfindlichkeit eines Hallsensorelements gemäß einem Ausführungsbeispiel;
• 2a eine schematische Prinzipdarstellung in einer Draufsicht eines Magnetfeld-Sensorelements (Hallsensorelements) gemäß einem Ausführungsbeispiel;
• 2b eine schematische Prinzipdarstellung eines Magnetfeld-Sensors (Hallsensor) gemäß einem Ausführungsbeispiel, wobei der Magnetfeld-Sensor zumindest ein Hallsensorelement aufweist;
• 3a einen beispielhaften Empfindlichkeitsverlauf des Hallsensorelements im Temperaturbereich von -35°C bis 150°C gemäß einem Ausführungsbeispiel;
• 3b einen beispielhaften Widerstandsverlauf des Hallsensorelements im Temperaturbereich von -35°C bis 150°C gemäß einem Ausführungsbeispiel;
• 3c einen beispielhaften Verlauf der widerstandsnormierten Empfindlichkeit im Temperaturbereich von -35°C bis 150°C gemäß einem Ausführungsbeispiel;
• 4a einen beispielhaften Verlauf einer Abweichung der Bz Empfindlichkeit zu Bx nach Abgleich Bz zu Bx bei 25°C (Spinning-Current) gemäß einem Ausführungsbeispiel;
• 4b einen beispielhaften Verlauf der widerstandsnormierten Empfindlichkeit mit Abgleich Bz zu Bx bei 25°C (Einzelphase PH0) gemäß einem Ausführungsbeispiel;
• 4c einen beispielhaften Verlauf einer Abweichung der widerstandsnormierten Empfindlichkeit B_Z zu B_X nach Abgleich Bz zu Bx bei 25°C (Spinning-Current) gemäß einem Ausführungsbeispiel;
• 5 ein schematisches Ablaufdiagramm eines Verfahrens zum Bestimmen einer momentanen Empfindlichkeit eines Hallsensorelements gemäß einem weiteren Ausführungsbeispiel;
• 6 ein schematisches Ablaufdiagramm eines weiteren Verfahrens zum Bestimmen einer momentanen Empfindlichkeit eines Hallsensorelements gemäß einem weiteren Ausführungsbeispiel; und
• 7 einen beispielhaften Verlauf der indirekt gemessenen Hall-Sensor-Empfindlichkeit nach Kalibrierung bei 25°C und 40°C zu Messwerten mit Helmholtz-Spulen gemäß einem Ausführungsbeispiel.

Preferred exemplary embodiments are explained in more detail below with reference to the accompanying drawings. Show it:

• 1 a schematic flowchart of a method for determining an instantaneous sensitivity of a Hall sensor element according to an embodiment;
• 2a a schematic basic representation in a top view of a magnetic field sensor element (Hall sensor element) according to an embodiment;
• 2 B a schematic basic representation of a magnetic field sensor (Hall sensor) according to an embodiment, wherein the magnetic field sensor has at least one Hall sensor element;
• 3a an exemplary sensitivity curve of the Hall sensor element in the temperature range from −35° C. to 150° C. according to an exemplary embodiment;
• 3b an exemplary resistance profile of the Hall sensor element in the temperature range from -35° C. to 150° C. according to an exemplary embodiment;
• 3c an exemplary course of the resistance-normalized sensitivity in the temperature range from -35° C. to 150° C. according to an embodiment;
• 4a an exemplary course of a deviation of the Bz sensitivity to Bx after adjustment of Bz to Bx at 25° C. (spinning current) according to an embodiment;
• 4b an exemplary course of the resistance-normalized sensitivity with adjustment Bz to Bx at 25° C. (single phase PH0) according to an embodiment;
• 4c an exemplary course of a deviation of the resistance-normalized sensitivity B _Z to B _X after adjustment Bz to Bx at 25° C. (spinning current) according to an embodiment;
• 5 a schematic flowchart of a method for determining an instantaneous sensitivity of a Hall sensor element according to a further exemplary embodiment;
• 6 a schematic flow chart of a further method for determining an instantaneous sensitivity of a Hall sensor element according to a further exemplary embodiment; and
• 7 an exemplary course of the indirectly measured Hall sensor sensitivity after calibration at 25° C. and 40° C. for measured values with Helmholtz coils according to an exemplary embodiment.

Before exemplary embodiments of the present concept are explained in more detail below with reference to the drawings, it is pointed out that identical elements, objects, function blocks and/or method steps that have the same function or have the same effect are provided with the same reference symbols in the different figures, so that the The description of these elements, objects, function blocks and/or method steps shown in the exemplary embodiments is interchangeable or can be applied to one another.

Various embodiments will now be described in more detail with reference to the accompanying drawings, in which some embodiments are illustrated. In the figures, dimensions of illustrated elements, layers and/or regions may not be drawn to scale for clarity.

It should be understood that when an element is referred to as being “connected” or “coupled” to another element, it may be directly connected or coupled to the other element, or intermediary elements may be present. In contrast, when an element is said to be "directly connected" or "coupled" to another element, there are no intermediate elements present. Other terms used to describe the relationship between elements should be construed in a similar manner (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.).

To simplify the description of the different embodiments, the 2a and 2 B a Cartesian coordinate system x, y, z, the directions x, y, z being arranged orthogonally to one another. In the exemplary embodiments, the xy plane corresponds to the main surface area of a carrier or substrate (=reference plane=xy plane), with the vertical direction upwards relative to the reference plane (xy plane) corresponding to the “+z” direction, and where the vertical downward direction with respect to the reference plane (xy plane) corresponds to the "-z" direction. In the following description, the term "lateral" means a direction parallel to the x and/or y direction, ie parallel to the xy plane, while the term "vertical" indicates a direction parallel to the +/-z direction . In the 2a and 2 B the drawing plane extends parallel to the xy plane.

The following exemplary embodiments relate to magnetic field sensors that can have one or more magnetic field sensor elements. Magnetic field sensor elements can be produced using semiconductor technology in a semiconductor substrate, with the semiconductor substrate being able to have a silicon material, for example. The following exemplary embodiments relate to Hall sensor elements, which can be embodied as individual magnetic field-sensitive sensor elements, and to Hall sensors, which can be embodied as the sensor arrangement with at least one or also a plurality of individual Hall sensor elements and, for example, the associated control circuit and (optional) the evaluation circuit. The drive circuit with the optional evaluation circuit is also referred to as a processing device.

With regard to the following description of the exemplary embodiments of the concept according to the invention, it is pointed out that reference to a resistance or resistance value of the respective Hall sensor element or its temperature dependence also refers to an operating variable or whose temperature dependence is applicable.

The following is now based on the 1 a schematic flowchart of a method 100 for determining an instantaneous sensitivity of a Hall sensor element according to an embodiment is explained. The Hall sensor element can be part of a Hall sensor, for example.

For further explanation is also on the 2a-b referenced where 2a shows a schematic basic representation of a magnetic field sensor element 20 (Hall sensor element) according to an embodiment, and 2 B shows a schematic top view of a magnetic field sensor 10 (Hall sensor) according to an embodiment, wherein the magnetic field sensor 10 has at least one Hall sensor element 20 .

The operating variable X, which is dependent on the electrical resistance value (R _Hall =R ₁ ) of Hall sensor element 20, can now be, for example, (1.) the electrical resistance value R _Hall of Hall sensor element 20, or it can also be (2.) the electrical conductivity value (1/R _Hall ) of Hall sensor element 20, or (3.) in voltage-controlled operation with a specified (or constant) supply voltage, the resulting (or impressed) supply current of Hall sensor element 20, or (4.) in current-controlled operation with a specified ( or constant) supply current, the resulting (or impressed) supply voltage of the Hall sensor element 20, or (5.) in free-running operation, the electrical resistance value R _Hall or the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20) according to the ohmic Law "R = U / I" based on the supply current and supply voltage of the Hall sensor element (= R _Hall in the Ar working point of the Hall sensor element).

For further explanation is also on the 3a-c referenced where 3a shows an example of a (typical) sensitivity curve of the Hall sensor element in the temperature range from -35°C to 150°C. 3b shows an example of a (typical) resistance profile of the Hall sensor element in the temperature range from -35°C to 150°C. 3c shows an example of a (typical) course of resistance-normalized sensitivity in the temperature range from -35°C to 150°C.

The courses of 3a-c can also be displayed for the operating variable that is dependent or derived from the electrical resistance (or resistance value) of the Hall sensor element and its temperature dependence according to the respective operating mode (based on Ohm's law).

As in 1 is shown by way of example, includes method 100 for determining a sensitivity S _Hall , e.g. an instantaneous magnetic sensitivity, of Hall sensor element 20, taking into account an interrelationship between the temperature dependency of the sensitivity S _Hall and the temperature dependency of one of the electrical resistance value R _Hall , e.g. the internal resistance or Hall resistance R _Hall , the Hall sensor element 20 dependent operating variable X following steps.

In step 110, a reference sensitivity So and a reference value X ₀ of the operating variable X, for example during an operating state for reference value detection, of Hall sensor element 20 are determined. The reference sensitivity So and the reference value X ₀ of the operating variable X of the Hall sensor element 20, which is assigned to a temperature value, for example at a reference temperature value T ₀ , can be determined. The determination can include, for example, retrieving or providing the values for So and/or X ₀ from a memory 40 that can be accessed by the processing device 30 or measuring or recording the values for So and/or X ₀ .

In step 120 an instantaneous value X ₁ of the operating variable X, for example during an operating state for instantaneous value detection, of the Hall sensor element 20 is determined based on a control signal S _IN of the Hall sensor element 20 . As already indicated above, an operating mode or operating state can be voltage-controlled operation, current-controlled operation, or free-running operation of Hall sensor element 20 .

In step 130, the (instantaneous) sensitivity S _Hall of the Hall sensor element is now determined based on the reference sensitivity S ₀ , on the reference value X ₀ of the operating variable X, on the instantaneous value X ₁ of the operating variable X and on the functional relationship.

According to the exemplary embodiment, the present concept relates to a known, ascertained or specified functional relationship between the temperature dependency of the sensitivity S _Hall and the temperature dependency of the operating variable X of the Hall sensor element 20, which is dependent or derived from the electrical resistance (or resistance value) of the Hall sensor element 20, with the Change the sensitivity of the Hall element and the operating variable X of the Hall sensor element derived therefrom over temperature, and the temperature-related change in sensitivity S _Hall and the temperature-related change in the operating variable X of the Hall element derived therefrom are related to one another, for example, in a predetermined manner. This interrelationship or this predetermined relationship is now used to determine the current sensitivity S _Hall of the Hall sensor element 20 via the change in the operating variable X of the Hall sensor element, i.e. via the comparison of the instantaneous value of the operating variable X of the Hall sensor element with a reference measured value of the operating variable X of the Hall sensor element to close, ie to close the possible change compared to the reference sensitivity value S ₀ of the Hall sensor element 20.

The reference sensitivity or the reference sensitivity value S ₀ as well as the reference value X ₀ of the operating variable X of Hall sensor element 20 are determined, for example, at a reference temperature value, eg at a predefined (or constant) temperature value T ₀ . If the instantaneous value X ₁ of the operating variable X of the Hall sensor element is now determined based on a control signal S _IN impressed on Hall sensor element 20, the (instantaneous) sensitivity S _Hall of Hall sensor element 20 can now be determined directly from this based on the reference sensitivity S ₀ , the reference value X ₀ of the Operating variable X and the determined instantaneous value of the operating variable X ₁ are determined, the functional relationship between the temperature dependence of the sensitivity S _Hall and the temperature dependence of the operating variable X of the Hall sensor element 20 being taken into account.

Since the manufacturing technology, the respective structure and the semiconductor materials used have an influence on the functional relationship between the temperature dependence of the sensitivity S _Hall and the temperature dependence of the operating variable X of the Hall sensor element 20, the functional relationship can be determined for each type of Hall sensor element and made available, for example, as a calculation rule will.

For further explanation is also on the 2a-b referenced where 2a shows a schematic basic representation of a magnetic field sensor element (Hall sensor element) 20 according to an embodiment, and 2 B shows a schematic view of a magnetic field sensor (Hall sensor) 10 according to an embodiment, wherein the magnetic field sensor 10 has at least one Hall sensor element 20 . Hall sensor element 20 can therefore be part of a Hall sensor 10, for example

As in 2 B shown by way of example, Hall sensor 10 has at least one Hall sensor element 20 and a processing device 30 which is designed to carry out method 100 . Processing device 30 can be used in particular as a control device for feeding the respective control signal S _IN , e.g. a current and/or a voltage, into the at least one Hall sensor element 20 or the plurality of Hall sensor elements 20 and optionally for reading out the output signal S _OUT , e.g. the Hall voltage U _Hall , of the respective Hall sensor element 20 may be formed.

According to one exemplary embodiment, method 100 for determining sensitivity can also be applied to a Hall sensor 10 having a plurality of Hall sensor elements 20 in order to determine the respective sensitivity of individual Hall sensor elements 20 of Hall sensor 10 . The Hall sensor 10 can thus have a plurality (≧2) of Hall sensor elements 20 , it being possible for the steps of the method to be carried out for each Hall sensor element or for each Hall sensor element of a different type of the plurality of Hall sensor elements 20 .

According to one exemplary embodiment, the plurality of Hall sensor elements has at least one Hall sensor element 20 of a first sensor type and a further Hall sensor element 20′ of a further sensor type that is different from the first sensor type. The Hall sensor element 20 and the further Hall sensor element 20′ can thus have a different temperature drift of the respective sensitivity. According to one exemplary embodiment, Hall sensor element 20 has a lateral Hall sensor element, with further Hall sensor element 20′ having a vertical Hall sensor element.

The following exemplary embodiments relate to Hall sensor elements 20, which can be embodied as individual sensor elements 20 sensitive to magnetic fields, and to Hall sensors 10, which are embodied as the sensor arrangement with at least one or also a plurality of individual Hall sensor elements 20 and, for example, the associated control circuit and (optionally) the evaluation circuit could be. The drive circuit with the optional evaluation circuit is also referred to as the processing device 30 .

Lateral Hall sensor elements 20 are, for example, as thin, doped semiconductor layers in a substrate material 40 (in the xy plane) and have, for example, four (or more) electrodes 20-1, . . . , 20-4. A drive signal S _IN , for example a current or a voltage, is fed in (impressed) by two opposite electrodes _20-1 /-2; Hall voltage U _Hall . If such a lateral Hall sensor element 20 is traversed by a magnetic field B running perpendicularly (vertically = parallel to the z-direction) to the layer or by a resulting magnetic field component Bz, the Hall sensor element 20 supplies an output voltage S _OUT which is proportional to the (signed) magnitude of the vector product magnetic flux density B and current strength. The cause is the Lorentz force on the moving majority charge carriers in the active semiconductor layer.

Vertical Hall sensor elements 20 extend vertically into the semiconductor substrate and are contacted at their surface area. If a magnetic field running parallel (lateral = parallel to the xy plane) to the substrate surface or a resulting magnetic field component flows through such a vertical Hall sensor element, the Hall sensor element supplies an output voltage that is proportional to the (signed) amount of the vector product of magnetic flux density and current due to the Lorentz force on the moving majority charge carriers in the Hall sensor element.

According to one exemplary embodiment, Hall sensor 10 can have a plurality (≥2) of Hall sensor elements 20, which are designed for two-dimensional detection of a magnetic field B, e.g. in a reference point, along two linearly independent location vectors or orthogonal location vectors. In a 2D Hall sensor 10, for example, at least two Hall sensor elements 20 are arranged in such a way that their sensitivity directions (starting from a common point of origin or center point if possible) are aligned along two orthogonal spatial axes.

According to one exemplary embodiment, Hall sensor 10 can have a large number (≥3) of Hall sensor elements 20, which are designed for three-dimensional detection of a magnetic field B, e.g. in a reference point, along three linearly independent location vectors or orthogonal location vectors. In a 3D Hall sensor 10, for example, at least three Hall sensor elements 20 are arranged in such a way that their sensitivity directions (starting from a common point of origin or center point if possible) are aligned along the three orthogonal spatial axes.

According to one exemplary embodiment, the operating current S _IN impressed on Hall sensor element 20 can be decoupled by means of a current mirror circuit 60 in order to determine reference value X ₀ and/or instantaneous value X ₁ of operating variable X of Hall sensor element 20 . The current mirror circuit 60 can be arranged on the input side or on the output side with respect to the Hall sensor element 20 .

In an optional further step 140, the current sensitivity S _Hall (= S ₁ ) of the Hall sensor element 20 is determined based on the reference sensitivity So and on the ratio between the reference value X ₀ of the operating variable X and the determined instantaneous value X ₁ of the operating variable X of the Hall sensor element 20 .

According to one exemplary embodiment, a change in the ratio between the reference value X ₀ of the operating variable X and the determined instantaneous value X ₁ of the operating variable X can correspond to a change in the sensitivity S _Hall of the Hall sensor element 20 .

According to one embodiment, for example, the Hall sensitivity S _Hall of a Hall sensor element 20 can be proportional to the charge carrier mobility μ, while the operating variable X of the Hall sensor element 20 can be indirectly proportional to the charge carrier mobility μ in the semiconductor material (=active area) of the Hall sensor element 20.

With such a causal relationship, for example, an operating variable-normalized sensitivity of Hall sensor element 20 can be defined, which is specified as the “product” of reference sensitivity S ₀ and reference value X ₀ of operating variable X of the Hall sensor element. This is the case, for example, when the operating variable X, which is dependent on the electrical resistance value (R _Hall =R ₁ ) of Hall sensor element 20 - is the electrical resistance value R _Hall of Hall sensor element 20, - in voltage-controlled operation, the supply current S _IN of Hall sensor element 20 is, or (-) in free-running operation, the electrical resistance value R _Hall of the Hall sensor element 20 (according to Ohm's law R = U / I) based on the supply current and the supply voltage of the Hall sensor element (= R _Hall at the operating point of the Hall sensor element).

The method 100 can thus also have a step 150 of determining an operating variable-sensitivity product S _XN of the Hall sensor element 20 as a product of the reference sensitivity So and the reference value X ₀ of the operating variable X of the respective Hall sensor element 20 according to the following relationship (formula 1): $${\text{S}}_{\text{XN}}={\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0*{\text{X}}_0\text{(= operating size}ß\text{in}-{\text{normalized sensitivity S}}_{\text{hello}}\text{)}$$

mit X₀ = Referenzwert
X₁ = Momentanwert der Betriebsgröße
S_XN = Betriebsgröße-Empfindlichkeit-Produkt des jeweiligen Hallsensorelements.According to one exemplary embodiment, the method 100 can also include a further step of determining 160 the (instantaneous) sensitivity S _Hall of the Hall sensor element 20 based on the following relationship (formula 2):
${\text{S}}_{\text{hello}}={\text{<figure-callout id="0" label="X" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">X</figure-callout>}}_0/{\text{<figure-callout id="1" label="X" filenames="DE102020212114A1\_0025.png" state="{{state}}">X</figure-callout>}}_1*{\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0={\text{S}}_{\text{XN}}/{\text{<figure-callout id="1" label="X" filenames="DE102020212114A1\_0025.png" state="{{state}}">X</figure-callout>}}_1,\text{(= current Hall sensitivity)}$

with X ₀ = reference value
X ₁ = instantaneous value of the operating variable
S _XN = operating variable sensitivity product of the respective Hall sensor element.

In the case of the above-described functional relationship (if the Hall sensitivity S _Hall of a Hall sensor element 20 is proportional to the charge carrier mobility µ, while the operating variable X of the Hall sensor element 20 is indirectly proportional to the charge carrier mobility µ in the semiconductor material (=active area) of the Hall sensor element 20), this can also be done, for example define an operating variable-normalized sensitivity of Hall sensor element 20, which is given as a “quotient” of reference sensitivity So and reference value X ₀ of operating variable X of the Hall sensor element. This is the case, for example, when the operating variable X dependent on the electrical resistance value (R _Hall = R ₁ ) of Hall sensor element 20 - the operating variable (X) dependent on the electrical resistance value (R _Hall = R ₁ ) of Hall sensor element (20) is the electrical Conductivity value (1/R _Hall ) of the Hall sensor element (20) is, e.g. in free-running operation, the electrical conductivity value (1/R _Hall ) of the Hall sensor element 20 (according to Ohm's law R = U / I) based on the supply current and the supply voltage of the Hall sensor element (= R _Hall in the operating point of the Hall sensor element) or (-) in current-controlled operation, the supply voltage of the Hall sensor element 20).

wobei die von dem elektrischen Widerstandswert (R_Hall = R₁) des Hallsensorelements 20 abhängige Betriebsgröße X (-) der elektrische Leitfähigkeitswert (I/R_Hall) des Hallsensorelements 20 ist, z.B. im freilaufenden Betrieb, der elektrische Leitfähigkeitswert (1/R_Hall) des Hallsensorelements 20 (gemäß dem ohmschen Gesetz R = U / I) basierend auf dem Versorgungsstrom und der Versorgungsspannung des Hallsensorelements (= R_Hall im Arbeitspunkt des Hallsensorelements) ist oder (-) im spannungsgesteuerten Betrieb, der Versorgungsstrom des Hallsensorelements 20 ist.The method 100 can thus also include a step 180 of determining a sensitivity-operating variable quotient (S _XN ) of the respective Hall sensor element (20) as a quotient of the reference sensitivity (S ₀ ) and the reference value (X ₀ ) of the operating variable (X) of the respective Hall sensor element (20) according to the following relationship (Formula 3): $${\text{S}}_{\text{XN}}={\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0/{\text{X}}_0\left(=\text{B}e\text{drive group}\ddot{\text{O}}ße-{\text{normalized sensitivity S}}_{\text{hello}}\right)$$

the operating variable X(-), which depends on the electrical resistance value (R _Hall =R ₁ ) of Hall sensor element 20, is the electrical conductivity value (I/R _Hall ) of Hall sensor element 20, e.g. in free-running operation, the electrical conductivity value (1/R _Hall ) of Hall sensor element 20 (according to Ohm's law R = U / I) based on the supply current and the supply voltage of the Hall sensor element (= R _Hall at the operating point of the Hall sensor element) or (-) in voltage-controlled operation, the supply current of Hall sensor element 20.

X₀ = Referenzwert der Betriebsgröße
X₁ = Momentanwert der Betriebsgröße
S_XN = Empfindlichkeit-Betriebsgröße-Quotient des jeweiligen Hallsensorelements 20.The method 100 can thus also have a step of determining 190 the (instantaneous) sensitivity S of the respective Hall sensor element based on the following relationship (formula 4): with $${\text{S}}_{\text{hello}}={\text{<figure-callout id="1" label="X" filenames="DE102020212114A1\_0025.png" state="{{state}}">X</figure-callout>}}_1/{\text{<figure-callout id="0" label="X" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">X</figure-callout>}}_0*{\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0={\text{S}}_{\text{XN}}*{\text{<figure-callout id="1" label="X" filenames="DE102020212114A1\_0025.png" state="{{state}}">X</figure-callout>}}_1,\left(=\text{currently}e\text{hello}-\text{sensitivity}e\text{it}\right)$$

X ₀ = reference value of the operating variable
X ₁ = instantaneous value of the operating variable
S _XN = sensitivity-operating variable quotient of the respective Hall sensor element 20.

The above exemplary embodiments of method 100 now have in common that the instantaneous sensitivity S _Hall of Hall sensor element 20, ie the (temperature-dependent) deviation of instantaneous sensitivity S _HALL from the reference sensitivity value, can be determined based on impressed control signal S _IN of Hall sensor element 20, as a result of which the determination of the sensitivity of the Hall sensor element 20 can be carried out extremely efficiently and quickly, independently of calibration magnetic fields etc.

According to a possible application scenario, the method 100 can be used to achieve sensitivity synchronization in Hall sensors 10 with a plurality of Hall sensor elements 20, such as in 2D or 3D Hall sensors and in general in ratiometric measuring systems. According to one exemplary embodiment, Hall sensor 10 has a plurality (≥2) of Hall sensor elements 20 and is part of a ratiometric measuring system.

In ratiometric measuring systems, such as angle sensors, the synchronization of the vertical and horizontal Hall sensor elements 20 is important. As has already been described above, the (temperature-related) drift of the sensitivity S _Hall has a different effect on the different (two) sensor types. This leads to measurement errors. Consequently, sensor arrangements 10 for ratiometric measurements are currently often selected such that the magnetic field B to be measured is applied to Hall sensor elements 20 (eg vertical Hall sensor elements 20) of Hall sensor 10 only in the X/Y direction or only in the Z direction.

In order to demonstrate the difference in the sensitivity drift of different Hall sensor elements, e.g. lateral and vertical Hall sensor elements, the ratio of the sensitivities S _Hall of both sensor types at 25°C was formed (Bz / Bx) and then the sensitivity S _Hall of the Z sensor by this quotient divided at each point via temperature (Bz balanced on Bx), see also for example 4a .

That based on 1 The method 100 shown for determining an instantaneous sensitivity of a Hall sensor element 20 will now be described as an example using the electrical resistance value R _Hall (internal resistance or Hall resistance) as the operating variable X of the Hall sensor element 20 .

Method 100 for determining a sensitivity S _Hall , e.g. an instantaneous magnetic sensitivity, of a Hall sensor element 20, taking into account a known, e.g. determined or specified, functional relationship between the temperature dependency of the sensitivity S _Hall and the temperature dependency of the electrical resistance R _Hall , e.g Internal resistance or Hall resistance, the Hall sensor element 20 following steps.

In step 110, a reference sensitivity S ₀ and an electrical reference resistance value R ₀ of the Hall sensor element are determined. In this way, the reference sensitivity S ₀ and the electrical reference resistance value R ₀ of the Hall sensor element 20, which is assigned to a temperature value, for example at a reference temperature value T ₀ , can be determined. The determination can include, for example, retrieving or providing the values for S ₀ and/or R ₀ from a memory 40 that can be accessed by the processing device 30 or measuring or recording the values for S ₀ and/or R ₀ .

In step 120, an instantaneous electrical resistance value R ₁ of the Hall sensor element is determined based on a control signal S _IN , for example an applied control current or an applied control voltage, in Hall sensor element 20 .

In step 130, the (instantaneous) sensitivity S _Hall of the Hall sensor element is now determined based on the reference sensitivity So, on the electrical reference resistance value R ₀ , on the determined instantaneous electrical resistance value R ₁ (=R _Hall ) and on the functional relationship.

According to the exemplary embodiment, the present concept relates to a known, ascertained or predetermined effective relationship between the temperature dependency of the sensitivity S _Hall and the temperature dependency of the electrical resistance R _Hall of Hall sensor element 20, with the sensitivity of the Hall element and the electrical resistance of the Hall element increasing change with temperature, and the temperature-related change in sensitivity S _Hall and the temperature-related change in resistance R _Hall of the Hall element are in a (predetermined) relationship to one another. This interrelationship or this predetermined relationship is now used to infer the current sensitivity S _Hall of the Hall sensor element 20 via the change in the electrical resistance of the Hall element, ie via the comparison of the current resistance value of the Hall sensor element with a reference measured value of the resistance of the Hall sensor element. ie to the possible change compared to the reference sensitivity value So of the Hall sensor element 20.

The reference sensitivity (or the reference sensitivity value) S ₀ as well as the electrical reference resistance value R ₀ of the Hall sensor element 20 are determined, for example, at a reference temperature value (=a constant temperature value) T ₀ . If the instantaneous electrical resistance value R ₁ (= R _Hall ) of the Hall sensor element is determined based on a control signal S _IN impressed on Hall sensor element 20 in accordance with Ohm's law, the (instantaneous) sensitivity S _Hall of Hall sensor element 20 can now be determined directly from this based on the reference sensitivity Thus, the electrical reference resistance value R ₀ and the ascertained instantaneous electrical resistance value R ₁ are determined, the functional relationship between the temperature dependence of the sensitivity S _Hall and the temperature dependence of the resistance value R _Hall of the Hall sensor element 20 being taken into account.

Since the manufacturing technology, the respective structure and the semiconductor materials used have an influence on the functional relationship between the temperature dependence of the sensitivity S _Hall and the temperature dependence of the resistance R _Hall of a Hall sensor element 20, the functional relationship can be determined for each type of Hall sensor element and, for example, as a calculation rule to be provided.

In the optional further step 140, the instantaneous sensitivity S _Hall (= S ₁ ) of the Hall sensor element 20 according to one embodiment is based on the reference sensitivity S ₀ and on the ratio (as an example of the functional relationship) between the electrical reference resistance value R ₀ and the determined instantaneous electrical resistance value R ₁ of the Hall sensor element is determined.

According to one embodiment, for example, the Hall sensitivity S _Hall of a Hall sensor element 20 can be proportional to the charge carrier mobility μ, while the Hall resistance R _Hall of the Hall sensor element 20 can be indirectly proportional to the charge carrier mobility μ in the semiconductor material (=active area) of the Hall sensor element 20.

With such an active relationship, a resistance-normalized sensitivity of the Hall sensor element 20 can be defined, for example, which is specified as the “product” of the reference sensitivity S ₀ and the electrical reference resistance value R ₀ of the Hall sensor element.

In the following, some physical and technological relationships in Hall sensor elements 20 are exemplified, but it is pointed out that the manufacturing technology used in each case, the respective structure and the semiconductor materials used have an influence on the functional relationship between the temperature dependence of the sensitivity and the temperature dependence of the resistance of a Have Hall sensor elements and thus the following statements on the functional relationship are only to be regarded as examples.

Exemplary embodiments of the method 100 according to the invention for determining an instantaneous sensitivity of a Hall sensor element 20 are characterized in that the sensitivity S _Hall of the Hall sensor element 20 can be observed in its electrical resistance R _Hall and can therefore be measured indirectly. The basis of the concept according to the invention is the linking of the sensitivity S _Hall of the Hall sensor element 20 with its electrical resistance R _Hall .

mit der Ladungsträgerbeweglichkeit µ, Breite b und Länge l des Sensors sowie dessen Ansteuersignal S_IN (hier z.B. die Betriebsspannung UHALLSUP = S_IN). Die Betriebsspannung des Hallsensorelements 20 wird beispielsweise auf einen konstanten Wert geregelt. Auch die Geometrie des Hallsensorelements bleibt nach der Fertigung konstant. Somit liegt die Ursache der Temperaturdrift der Empfindlichkeit S_HALL des Hallsensorelements 20 in einer Veränderung der Ladungsträgerbeweglichkeit µ. Da mit steigender Temperatur die Vibration der Phononen im Halbleitermaterial des Hallsensorelements 20 zunimmt, sinkt die Beweglichkeit µ der Ladungsträger und somit die Empfindlichkeit S_Hall des Sensorelements 20, wie in 3a zu sehen ist. 3a zeigt beispielhaft einen (typischen) Empfindlichkeitsverlauf des Hallsensorelements im Temperaturbereich von -35°C bis 150°C.In voltage-controlled operation, the sensitivity S _HALL of a Hall sensor element 20 is defined by the following formula (5): $${\text{S}}_{\text{hello}}=\mathrm{\mu }\frac{\text{b}}{\text{l}}{\text{u}}_{\text{Hallsup}}$$

with the charge carrier mobility µ, width b and length l of the sensor and its control signal S _IN (here, for example, the operating voltage UHALLSUP = S _IN ). The operating voltage of Hall sensor element 20 is regulated to a constant value, for example. The geometry of the Hall sensor element also remains constant after production. The cause of the temperature drift in sensitivity S _HALL of Hall sensor element 20 is therefore a change in charge carrier mobility μ. Since the vibration of the phonons in the semiconductor material of the Hall sensor element 20 increases with increasing temperature, the mobility μ of the charge carriers and thus the sensitivity S _Hall of the sensor element 20 decrease, as in FIG 3a you can see. 3a shows an example of a (typical) sensitivity curve of the Hall sensor element in the temperature range from -35°C to 150°C.

A Hall sensor element can be viewed as a Wheatstone resistance bridge. The total resistance of Hall sensor element 20 is calculated using its material characteristics, dopant concentration n, charge q, charge carrier mobility μ and its geometry, length l and cross-sectional area A, according to the following formula (6): $$R_{Hall}=\frac{1}{q\mathrm{\mu }n}\frac{l}{A}$$

The dopant concentration n is specified by the manufacturing process of Hall sensor element 20 . The sensor-geometric parameters l and A are fixed during the development of the Hall sensor element placed. It can thus be assumed that the drift properties of the Hall sensor resistance R _Hall are defined by the charge carrier mobility μ. In direct comparison to the sensitivity S _Hall in formula (5), the drift characteristic of the resistance R _Hall is indirectly proportional. This confirms the measurement of the resistance of a Hall sensor element, which is exemplified in 3b is shown. 3b shows an example of a (typical) resistance profile of the Hall sensor element in the temperature range from -35°C to 150°C.

Verrechnet werden. 3c zeigt beispielhaft einen (typischen) Verlauf der widerstandsnormierten Empfindlichkeit im Temperaturbereich von -35°C bis 150°C. Die zusätzliche Information kann sowohl in ratiometrischen als auch Absolutwert-basierten Messsystemen 10 gewinnbringend genutzt werden, wie dies noch nachfolgend beschrieben wird.Both quantities S _Hall and R _Hall can be combined to form the so-called resistance-normalized sensitivity according to the relationship or the formula (7) $$S_{RN}=S_{Hall}\ast R_{Hall}$$

Will be charged. 3c shows an example of a (typical) course of resistance-normalized sensitivity in the temperature range from -35°C to 150°C. The additional information can be used profitably in both ratiometric and absolute-value-based measurement systems 10, as will be described below.

1. A) Spannungsgesteuerter Betrieb: Messung/Ermittlung des Hallsensorversorgungsstroms, da die Versorgungsspannung fest eingestellt oder vorgegeben ist
2. B) Stromgesteuerter Betrieb: Messung/Ermittlung der Hallsensorversorgungsspannung, da der Versorgungsstrom fest eingestellt oder vorgegeben ist
3. C) Ungeregelt betriebener (freilaufender) Hall-Sensor: Messung/Ermittlung des Versorgungsstroms sowie der Versorgungsspannung (zur Arbeitspunktermittlung)

Since, as mentioned above, supply voltage S _IN =V _HALLSUP of Hall sensor element 20 is regulated to a constant value in voltage-controlled operation, measuring the (resulting) sensor current through Hall sensor element 20 is sufficient to detect electrical resistance R ₁ . This can be done both in the case of integrated Hall sensor systems 10 on the respective chips 40 themselves, and externally. For different operating modes of Hall sensors 10 or Hall sensor elements 20, the following measured variables result for detecting the electrical resistance R _Hall of sensor 10 or sensor element 20:

1. A) Voltage-controlled operation: Measurement/determination of the Hall sensor supply current, since the supply voltage is fixed or specified
2. B) Current-controlled operation: Measurement/determination of the Hall sensor supply voltage, since the supply current is fixed or specified
3. C) Unregulated (free-running) Hall sensor: Measurement/determination of the supply current and the supply voltage (to determine the operating point)

Based on the different operating modes A, B and C of Hall sensors 10 or Hall sensor elements 20, it is clear that the method 100 according to the invention for determining a sensitivity S _Hall of a Hall sensor element 20 according to the 1 - 4 and also the method 200 according to the invention (described below) for determining a sensitivity S _Hall of a Hall sensor element 20 according to FIGS 5 and 6 relate to the combination of electrical resistance (resistance value) and sensitivity (sensitivity value) of a Hall sensor element.

According to exemplary embodiments, as an alternative or in addition to the electrical resistance of the respective Hall element 20, a variable X (reference variable X ₀ , instantaneous variable X ₁ ) that is dependent or derived from the electrical resistance value R _Hall of the sensor element 20 can also be determined the electrical reference variable X ₀ and the determined instantaneous variable X ₁ on the temperature-related change in the sensitivity S _Hall of the Hall sensor element 20 can be inferred.

Operating mode A: the determined Hall sensor supply current forms the variable X dependent on (or derived) from the electrical resistance value R _Hall of the sensor element 20 (with the reference variable=reference current value X ₀ and the instantaneous variable=instantaneous current value X ₁ ) at the permanently set or specified supply voltage.

Operating mode B: the determined Hall sensor supply voltage forms the variable X dependent on (or derived) from the electrical resistance value R _Hall of the sensor element 20 with the fixed or specified supply current (with the reference variable=reference voltage value X ₀ and the instantaneous variable=instantaneous voltage value X ₁ ).

Operating mode C: the ratio of the Hall sensor supply voltage determined and the Hall sensor supply current determined forms the variable X (with the reference variable X ₀ and the instantaneous variable X ₁ ) that is dependent (or derived) on the electrical resistance value (R _Hall ) of the sensor element (20). The dependent (or derived) of the electrical resistance R _Hall of the sensor element 20 size X (with the reference size X ₀ and the instantaneous size X ₁ ) can be the electrical resistance itself or the electrical cal conductivity value of the sensor element 20 to be. The variable X can therefore be determined according to Ohm's law from the determined Hall sensor supply voltage and the determined Hall sensor supply current.

In the description of the exemplary embodiments according to the invention, the terms electrical resistance (resistance value) or the operating variable X (determined Hall sensor supply current, determined Hall sensor supply voltage and/or determined ratio of Hall sensor supply current and Hall sensor supply voltage) which is dependent on or derived from the electrical resistance value R _Hall of sensor element 20 can be used.

The method 100 described and the application scenarios described in the following sections can be applied to all types of Hall sensors 10 or Hall sensor elements 20, discrete or integrated.

In the optional further step 140, the instantaneous sensitivity S _Hall of the Hall sensor element 20 according to the exemplary embodiment described is based on the reference sensitivity S ₀ and on the ratio (= an example of the functional relationship) between the electrical reference resistance value R ₀ and the determined instantaneous electrical resistance value R ₁ of Hall sensor element 20 is determined.

According to one exemplary embodiment, Hall sensitivity S _Hall of Hall sensor element 20 is proportional to charge carrier mobility μ, while Hall resistance R _Hall of Hall sensor element 20 is indirectly proportional to charge carrier mobility μ in the semiconductor material of Hall sensor element 20 .

It can thus be assumed that a change in the ratio between the electrical reference resistance value R ₀ (or the reference value X ₀ of the operating variable X) and the determined instantaneous electrical resistance value R _Hall = R ₁ (or the instantaneous value X ₁ of the operating variable X) within a tolerance range of, for example, less than 30%, 20%, 10%, 5%, 1% or 0.1% of a change in sensitivity S _Hall of Hall sensor element 20 corresponds.

The tolerance range therefore indicates the range within which the change in the ratio between the electrical reference resistance value R ₀ and the determined instantaneous electrical resistance value R ₁ can be used to infer the temperature-related change in sensitivity S _Hall of Hall sensor element 20 . The smaller the tolerance range that can be maintained, the more precisely the instantaneous sensitivity determination S _Hall and thus the temperature calibration can be carried out.

With such an active relationship, the resistance-normalized sensitivity of the Hall sensor element can be defined, for example, which is specified as the product (see formula 7 above) of the reference sensitivity and the electrical reference resistance value of the Hall sensor element.

mit R₀ = elektrischer Referenzwiderstandswert
R₁ = momentaner elektrischer Widerstandswert
SRN = Widerstand-Empfindlichkeit-Produkt des jeweiligen Hallsensorelements 20.The method 100 can thus also have a step 150 of determining the resistance-sensitivity product (=resistance-normalized sensitivity) SRN of the Hall sensor element as a product of the reference sensitivity S ₀ and the electrical reference resistance value R ₀ of the respective Hall sensor element in accordance with the relationship of formula (7). According to one exemplary embodiment, the method 100 can also have a further step of determining 160 the (instantaneous) sensitivity S _Hall of the Hall sensor element 20 based on the following relationship (formula 8): $${\text{S}}_{\text{hello}}={\text{<figure-callout id="0" label="R" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">R</figure-callout>}}_0/{\text{<figure-callout id="1" label="R" filenames="DE102020212114A1\_0025.png" state="{{state}}">R</figure-callout>}}_1*{\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0={\text{S}}_{\text{RN}}/{\text{<figure-callout id="1" label="R" filenames="DE102020212114A1\_0025.png" state="{{state}}">R</figure-callout>}}_1,\left(=\text{current Hall}-\text{sensitivity}\right)$$

with R ₀ = electrical reference resistance value
R ₁ = instantaneous electrical resistance
SRN = resistance-sensitivity product of the respective Hall sensor element 20.

According to a possible application scenario, the method 100 can be used to achieve sensitivity synchronization in Hall sensors 10 with a plurality of Hall sensor elements 20, such as in 2D or 3D Hall sensors and in general in ratiometric measuring systems. According to one exemplary embodiment, Hall sensor 10 has a plurality (≥2) of Hall sensor elements 20 and is part of a ratiometric measuring system.

In ratiometric measuring systems, such as angle sensors, the synchronization of the vertical and horizontal Hall sensor elements 20 is important. As already described above, the (temperature-related) drift of the sensitivity S _Hall has a different effect on the different (two) sensor types. This leads to measurement errors. Consequently, sensor arrangements 10 for ratiometric measurements are currently often selected such that the magnetic field B to be measured is applied to Hall sensor elements 20 (eg vertical Hall sensor elements 20) of Hall sensor 10 only in the X/Y direction or only in the Z direction.

In order to demonstrate the difference in the sensitivity drift of different Hall sensor elements, e.g. lateral and vertical Hall sensor elements, the ratio of the sensitivities S _Hall of both sensor types at 25°C was formed (B _Z / B _X ) and then the sensitivity S _Hall of the Z sensor was calculated divided this quotient at each point over temperature (Bz adjusted to Bx). 4a shows an exemplary course of the deviation of the Bz sensitivity from Bx after comparison of Bz with Bx at 25°C (spinning current). In 4a it becomes clear that the drift of the sensitivities of both sensor types deviates from each other by approx. ±11%.

By adjusting the sensitivity S _RN,BZ of the Z sensor to that of the X sensor S _RN,BX using the resistance-normalized sensitivity S RN,BX, the sensitivity drift of both Hall sensor elements is synchronized, as shown in 4b is shown. 4b shows an example of the resistance-normalized sensitivity curve with adjustment of Bz to Bx at 25°C (single phase PH0). How out 4b It can also be seen that the curves of the resistance-normalized sensitivity essentially have the same gradient, so that the resistance-normalized sensitivities change “to the same extent” over the temperature, ie they are synchronous.

If one considers the deviation of the drift of the resistance-normalized sensitivity of the Z-sensor to the drift of the resistance-normalized sensitivity of the X-sensor, this is less than 1%, as in 4c you can see. 4c shows an exemplary course of a deviation of the resistance-normalized sensitivity BZ to BX after comparison of BZ to BX at 25° C. (spinning current). Thus, a combination of lateral and vertical Hall sensors can be used for a ratiometric measuring system, which simplifies the construction of such a system.

According to the exemplary embodiments of the present concept 100 described above for determining a sensitivity S _Hall of a Hall sensor element 20, for example based on the above-mentioned boundary conditions, e.g. As manufacturing technology, sensor structure, semiconductor material, etc., the temperature dependence of the sensitivity of the Hall sensor element can be proportional to the charge carrier mobility, while the temperature dependence of the Hall resistance of the Hall sensor element can be indirectly proportional to the charge carrier mobility.

That based on 1 The method 100 illustrated for determining an instantaneous sensitivity of a Hall sensor element 20 will now be described as an example using the electrical conductivity value L _Hall =1/R _Hall as the operating variable X of the Hall sensor element 20 .

In the optional further step 170, the (instantaneous) sensitivity of the Hall sensor element according to a further exemplary embodiment is based on the reference sensitivity S ₀ and on the "quotient" (= an example of the functional relationship) between the electrical reference conductivity value L ₀ and the determined instantaneous electrical conductivity value 1/R ₁ of Hall sensor element 20 is determined.

The method 100 can thus also have a step 180 of determining a sensitivity-conductivity quotient (=conductivity-normalized sensitivity) S _RN of the respective Hall sensor element as a quotient (ratio) of the reference sensitivity S ₀ and the electrical reference conductivity value Lo of the respective Hall sensor element according to the following relationship ( Formula 9): $${\text{S}}_{\text{RN}}={\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0/{\text{L}}_0\left(=\text{conductive}\ddot{\text{a}}\text{normalized sensitivity}\right)$$

mit Lo = elektrischer Referenzleitfähigkeitswert
L₁ = momentaner elektrischer Leitfähigkeitswert (L_Hall = 1/R_Hall)
SLN = Empfindlichkeit-Leitfähigkeit-Quotient des jeweiligen Hallsensorelements 20.The method 100 can thus also have a step of determining 190 the (instantaneous) sensitivity S _Hall of the respective Hall sensor element based on the following relationship (formula 10): $${\text{S}}_{\text{hello}}={\text{<figure-callout id="1" label="L" filenames="DE102020212114A1\_0025.png" state="{{state}}">L</figure-callout>}}_1/{\text{<figure-callout id="0" label="L" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">L</figure-callout>}}_0*{\text{<figure-callout id="0" label="S" filenames="DE102020212114A1\_0024.png,DE102020212114A1\_0026.png" state="{{state}}">S</figure-callout>}}_0={\text{S}}_{\text{IN}}*{\text{<figure-callout id="1" label="L" filenames="DE102020212114A1\_0025.png" state="{{state}}">L</figure-callout>}}_1,\left(=\text{current Hall}-\text{sensitivity}\right)$$

where Lo = reference electrical conductivity value
L ₁ = instantaneous electrical conductivity value (L _Hall = 1/R _Hall )
SLN=sensitivity-conductivity quotient of the respective Hall sensor element 20.

The above exemplary embodiments of method 100 now have in common that the instantaneous sensitivity S _Hall of Hall sensor element 20, ie the (temperature-dependent) deviation of instantaneous sensitivity S _HALL from the reference sensitivity value, can be determined based on impressed control signal S _IN of Hall sensor element 20, as a result of which the determination of the sensitivity of the Hall sensor element 20 can be carried out extremely efficiently and quickly, independently of calibration magnetic fields etc.

Based on 5 a further method 200 for determining an instantaneous sensitivity S _Hall of a Hall sensor element 20 will now be described by way of example. 5 shows a schematic flowchart of method 200 for determining instantaneous sensitivity S _Hall of Hall sensor element 20 according to the further exemplary embodiment.

According to the further exemplary embodiment of the concept according to the invention, the known, determined or specified effective relationship between the temperature-dependent sensitivity S _Hall and the temperature-dependent electrical resistance R _Hall (or the operating variable X dependent on it) of the Hall sensor element 20 can now be “modeled” mathematically, i.e. the relationship between the temperature-related change in the sensitivity S _Hall and the temperature-related change in the operating variable X of the Hall element 20 that is dependent or derived from the electrical resistance value R _Hall (=sensitivity-operating variable relationship) can be mapped mathematically with the temperature as a variable.

Based on 5 a further method 200 for determining an instantaneous sensitivity S _Hall of a Hall sensor element 20 will now be described by way of example. 5 shows a schematic flowchart of method 200 for determining instantaneous sensitivity S _Hall of Hall sensor element 20 according to the further exemplary embodiment.

According to the further exemplary embodiment of the concept according to the invention, the known, determined or predetermined effective relationship between the temperature-dependent sensitivity S _Hall and the temperature-dependent electrical resistance R _Hall (or the operating variable X dependent thereon) of the Hall sensor element 20 can now be "modeled" mathematically, ie the temperature-dependent sensitivity S _Hall can now be mapped as a (mathematical) model or function F(X,T) with the temperature-dependent operating variable X, which depends on or is derived from the electrical resistance value R _Hall of the Hall element 20, the temperature as a variable.

According to one embodiment, the method 200 for determining a (current) sensitivity S _Hall of a Hall sensor element 20 of a Hall sensor 10 includes a step of providing 210 a model F(X,T) (= a mathematical function) for the sensitivity S _Hall with the operating variable X of the Hall sensor element 20 and with the temperature T of the Hall sensor element 20 as a variable. The operating variable X is dependent on or derived from the electrical resistance value R _Hall of the sensor element 20 .

This can be done based on the measured values of the electrical operating variable X and the sensitivity S _Hall at the different temperatures T, for example. With regard to the definition of the operating variable X, reference is again made to the explanations in the context of the above description of the method 100, which can also be used accordingly below.

In step 220, an instantaneous value X ₁ of the operating variable X of Hall sensor element 20 is determined based on a control signal S _IN of Hall sensor element 20, with step 230 also determining instantaneous temperature T ₁ of the active area of Hall sensor element 20.

In step 240, the instantaneous sensitivity S _Hall of the Hall sensor element 20 (e.g. as an absolute value) is determined based on the value (e.g. function value) of the model that is assigned to the instantaneous temperature value T ₁ and the instantaneous value X ₁ of the operating variable X, ie the function value of F(X ₁ , T ₁ ).

According to the present concept, a model or a function F(X,T) for the sensitivity with the operating variable X of the Hall sensor element 20 and with the temperature T as a variable can thus first be provided. This can be done, for example, by determining a sensitivity value S _N and a value X _N of the operating variable X of Hall sensor element 20 for a plurality of temperature values T _N , ie retrieving, providing or measuring them. This corresponds to a calibration at the temperature values T ₁ , T ₂ , .

Alternatively, it is also possible, for example, to set up the model F(X,T) purely by calculation if a “model” of Hall sensor element 20 based on the manufacturing technology used, the respective structure and the semiconductor materials used for the sensor element, etc., is available.

According to the present concept, the instantaneous value X ₁ of the operating variable X of the Hall sensor element 20 is now determined based on an impressed control signal (current and/or voltage impression) S _IN of the Hall sensor element 20, with the instantaneous temperature T ₁ of the active area of the Hall sensor element 20 also being determined will. Based on the value for the function F(X,T), which is assigned to the instantaneous temperature value T ₁ and the instantaneous value X ₁ of the operating variable X, the instantaneous sensitivity S _Hall of the Hall sensor element (e.g. as an absolute value) can finally be determined .

According to one exemplary embodiment, step 210 of providing can also include a step 250 of determining a sensitivity value S _N of a value X _N of the operating variable X of Hall sensor element 20 for a plurality of temperature values T _N , and also a step 260 of determining the model F(X , T) for the sensitivity S _Hall with the electrical operating quantity X of the Hall sensor element 20 and with the temperature T of the Hall sensor element 20 as variables.

This can be done, for example, by determining a sensitivity value S _N and a value X _N of the electrical operating variable X of the Hall sensor element for a plurality of temperature values T _N , ie by retrieving or providing them from a memory 40 accessible to processing device 30 or by measuring them . This corresponds to a calibration at the temperature values T ₁ , T ₂ , ..., whereby the mathematical model F(X,T) for sensitivity with the electrical operating variable X of the Hall sensor element and the temperature T as variable (based on the measured values of the operating variable and the sensitivity at the different temperatures).

Based on a plurality of temperature points for the sensitivity S _Hall (T), the typical function S _Hall (T) = F(X,T), e.g. B. using a measurement kit, "fitted" (determined). This typical function is also referred to, for example, as a "fitting function" (=mathematical model) of the sensitivity-operating variable relationship.

In the context of the present description, “fitting” is understood as a so-called “compensation calculation” in the form of a mathematical optimization method in order to determine or estimate the parameters of a given function (fitting function). A fitting or fit is understood to mean, for example, a function adaptation, in which case any measurement errors or uncertainties of the measurement points can also be taken into account. A possible method or procedure for a fit is the least squares method, with a Gaussian-distributed measurement uncertainty being assumed, for example. Of course, other procedures and algorithms can also be used to determine the fitting function, insofar as the course of the sensor output signal or a variable derived therefrom is reproduced with sufficient accuracy using the fitting function.

According to one embodiment, the plurality of temperature values T _N can be chosen to obtain an over-determined mathematical model F(X,T). This determines the number of temperature points needed to determine the model parameters. If an overdetermined system is assumed, two temperature points are required for a linear relationship, three temperature points for a quadratic relationship, etc. According to one exemplary embodiment, the model F(X,T) can have a linear function, an nth-order polynomial, a Taylor series or an exponential function or some other mathematical relationship.

According to one exemplary embodiment, the operating current S _IN flowing through the Hall sensor element can also be decoupled here, for example, by means of a current mirror circuit 60 in order to determine the electrical resistance value R ₁ . According to one embodiment, the Hall sensor element 20 Be part of an absolute value-based Hall sensor or measuring system 10, for example a magnetic field probe, a current sensor, etc.

Based on 6 a further method 300 for determining an instantaneous sensitivity S _Hall of a Hall sensor element 20 will now be described by way of example. 6 shows a schematic flowchart of method 300 for determining instantaneous sensitivity S _Hall of Hall sensor element 20 according to the further exemplary embodiment.

According to the further exemplary embodiment of the concept according to the invention, the known, determined or specified effective relationship between the temperature-dependent sensitivity S _Hall and the temperature-dependent electrical resistance R _Hall (or the operating variable X dependent on it) of the Hall sensor element 20 can now be “modeled” mathematically, i.e. the relationship between the temperature-related change in sensitivity S _Hall and the temperature-related change in the operating variable X of Hall element 20 that is dependent or derived from the electrical resistance value R _Hall (=sensitivity-operating variable relationship) can be mapped mathematically with temperature as a variable.

According to one embodiment, the method 300 for determining a (instantaneous) sensitivity S _Hall of a Hall sensor element 20 of a Hall sensor 10 includes a step of providing 310 a model f _SXN (T) (= a mathematical function) for a sensitivity-performance variable relationship (= performance variable -Normalized sensitivity) from sensitivity S _Hall and operating variable X of the Hall sensor element with the temperature T as a variable, the operating variable X being dependent on or derived from the electrical resistance value R _Hall of the sensor element 20 . This can be done based on the measured values of the electrical operating variable X and the sensitivity S _Hall at the different temperatures, for example.

With regard to the definition of the operating variable X, reference is again made to the explanations in the context of the above description of the method 100, which can also be used accordingly below.

In step 320, an instantaneous value X ₁ of the operating variable X of Hall sensor element 20 is determined based on a (loaded) control signal S _IN of Hall sensor element 20, with step 330 also determining the instantaneous temperature T ₁ of the active area of Hall sensor element 20.

In step 340, the instantaneous sensitivity S _Hall of the Hall sensor element 20 (as an absolute value) based on the value for the sensitivity-performance variable relationship f _SXN (T) associated with the instantaneous temperature value T ₁ and the instantaneous value X ₁ der Company size X determined.

According to the present concept, a temperature-dependent model f _SXN (T) for the sensitivity-operating variable relationship (=operating variable-normalized sensitivity) can be provided from the sensitivity and operating variable of the Hall sensor element with the temperature T as a variable. This can be done, for example, by determining, ie retrieving, providing or measuring, a sensitivity value S _N and a value X _N of the operating variable X of Hall sensor element 20 in each case at a plurality of temperature values T _N . This corresponds to a calibration at the temperature values T ₁ , T ₂ , ..., in which case the mathematical model f _SXN (T) for the sensitivity-performance variable relationship from sensitivity and electrical resistance of the Hall sensor element with the temperature T as a variable (based on the measured values of the operating size and the sensitivity at the different temperatures).

Alternatively, it is also possible, for example, to set up the model f _SXN (T) purely by calculation if a “model” of Hall sensor element 20 based on the manufacturing technology used, the respective structure and the semiconductor materials used for the sensor element, etc., is available.

According to the present concept, the instantaneous value X ₁ of the operating variable X of the Hall sensor element 20 is now determined based on an impressed control signal (current and/or voltage impression) S _IN of the Hall sensor element 20, with the instantaneous temperature T ₁ of the active area of the Hall sensor element 20 also being determined will. Based on the value for the sensitivity-operating variable relationship f _SRN (T), which is assigned to the instantaneous temperature value T ₁ and the instantaneous value X ₁ of the operating variable X, the instantaneous sensitivity S _Hall of the Hall sensor element (as an absolute value) to be determined.

According to one exemplary embodiment, step 310 of providing can also include a step 350 of determining a sensitivity value S _N of a value X _N of the operating variable X of Hall sensor element 20 for a plurality of temperature values T _N , and also a step 360 of determining the model f _SXN ( T) for the sensitivity-operating variable relationship from sensitivity S _Hall and electrical operating variable X of Hall sensor element 20 with temperature T as a variable.

This can be done, for example, by determining a sensitivity value S _N and a value X _N of the electrical operating variable X of the Hall sensor element at a plurality of temperature values T _N , ie by retrieving or providing them from a memory 40 accessible to processing device 30 or by measuring them . This corresponds to a calibration at the temperature values T ₁ , T ₂ , ..., in which case the mathematical model f _SXN (T) for the sensitivity-operating variable relationship from sensitivity and electrical operating variable X of the Hall sensor element with the temperature T as a variable (based on on the measured values of the operating size and the sensitivity at the different temperatures).

A typical function, e.g. B. using a measurement kit, "fitted" (determined). This typical function is also referred to, for example, as a "fitting function" (=mathematical model) of the sensitivity-operating variable relationship.

In the context of the present description, “fitting” is also understood in this exemplary embodiment as a so-called “compensation calculation” in the form of a mathematical optimization method in order to determine or estimate the parameters of a specified function (fitting function). A fitting or fit is understood to mean, for example, a function adaptation, in which case any measurement errors or uncertainties of the measurement points can also be taken into account. A possible method or procedure for a fit is the least squares method, with a Gaussian-distributed measurement uncertainty being assumed, for example. Of course, other procedures and algorithms can also be used to determine the fitting function, insofar as the course of the sensor output signal or a variable derived therefrom is reproduced with sufficient accuracy using the fitting function.

mit X(T) = Wert der elektrischen Betriebsgröße bei dem Temperaturwert T
f_SXN(T) = Funktionswert des Betriebsgröße-Empfindlichkeit-Produkts bei dem Temperaturwert T
des Hallsensorelements 20.According to one embodiment, the sensitivity-operating variable relationship is a product of the temperature-dependent sensitivity (S(T)) and the temperature-dependent, electrical operating variable (X(T)) of the Hall sensor element (20), with method 300 also having a step 370 of Determining the instantaneous sensitivity S _Hall of the Hall sensor element 20 at the temperature value T based on the following relationship or ratio (Formula 11): $$\text{S}\left(\text{T}\right)={\text{f}}_{\text{SXN}}\left(\text{T}\right)/\text{X}\left(\text{T}\right),\left(=\text{current Hall}-\text{sensitivity}\right)$$

with X(T) = value of the electrical operating variable at the temperature value T
f _SXN (T) = function value of the product of the operating quantity and sensitivity at the temperature value T
of the Hall sensor element 20.

mit X(T) = Wert der elektrischen Betriebsgröße bei dem Temperaturwert T
f_SXN(T) = Funktionswert des Betriebsgröße-Empfindlichkeit-Produkts bei dem Temperaturwert T
des Hallsensorelements 20.According to a further exemplary embodiment, the sensitivity-operating variable relationship is a quotient (= sensitivity-operating variable quotient) of the temperature-dependent sensitivity S(T) and the temperature-dependent, electrical operating variable X(T) of the Hall sensor element 20, the method 300 also having a step 380 of determining the (instantaneous) sensitivity S(T) of the Hall sensor element at the temperature value T based on the following relationship (formula 12): $$\text{S}\left(\text{T}\right)={\text{f}}_{\text{SXN}}\left(\text{T}\right)*\text{X}\left(\text{T}\right),\left(=\text{current Hall}-\text{sensitivity}\right)$$

with X(T) = value of the electrical operating variable at the temperature value T
f _SXN (T) = function value of the product of the operating quantity and sensitivity at the temperature value T
of the Hall sensor element 20.

According to one embodiment, the plurality of temperature values T _N can be chosen to obtain an over-determined mathematical model f _SRN (T). This determines the number of temperature points needed to determine the model parameters. If an overdetermined system is assumed, two temperature points are required for a linear relationship, three temperature points for a quadratic relationship, etc.

According to one exemplary embodiment, the model f _SRN (T) can have a linear function, an nth-order polynomial, a Taylor series or an exponential function or some other mathematical relationship.

According to one exemplary embodiment, the operating current S _IN flowing through the Hall sensor element can also be decoupled here, for example, by means of a current mirror circuit 60 in order to determine the electrical resistance value R ₁ .

According to one embodiment, the Hall sensor element 20 can be part of an absolute value-based Hall sensor or measuring system 10, e.g. a magnetic field probe, a current sensor, etc.

That based on 6 The method 300 illustrated for determining an instantaneous sensitivity of a Hall sensor element 20 will now be described as an example using the electrical resistance value R _Hall (internal resistance or Hall resistance) as the operating variable X of the Hall sensor element 20 .

According to the further exemplary embodiment of the concept according to the invention, the known, determined or specified effective relationship between the temperature-dependent sensitivity S _Hall and the temperature-dependent electrical resistance R _Hall of Hall sensor element 20 can now be "modeled" mathematically, ie the relationship between the temperature-related change in sensitivity S _Hall and the temperature-related change in the electrical resistance R _Hall of the Hall element 20 (=sensitivity-resistance relationship) can be mapped mathematically with the temperature as a variable.

For further explanation is also back to the 2a-b referenced where 2a shows a schematic basic representation of a magnetic field sensor element (Hall sensor element) according to an embodiment, and 2 B shows a schematic plan view of a magnetic field sensor (Hall sensor) according to an embodiment, wherein the magnetic field sensor has at least one Hall sensor element. As in 2 B shown by way of example, Hall sensor 10 has at least one Hall sensor element 20 and a processing device 30 that is designed to carry out method 300 .

According to an exemplary embodiment, the method 300 for determining a (instantaneous) sensitivity S _Hall of a Hall sensor element 20 (a Hall sensor 10) includes a step of providing 310 a model f _SRN (T) (=a mathematical function) for a sensitivity-resistance relationship ( = resistance-normalized sensitivity) from sensitivity S _Hall and electrical resistance R _Hall of the Hall sensor element with temperature T as a variable. This can be done, for example, based on the measured values of the electrical resistance value R _Hall and the sensitivity S _Hall at the different temperatures.

In step 320, the instantaneous electrical resistance value R ₁ of the Hall sensor element 20 is determined based on a (loaded) control signal S _IN of the Hall sensor element 20, with the instantaneous temperature T ₁ of the active area of the Hall sensor element 20 also being determined in step 330.

At step 340, the instantaneous sensitivity S _Hall of the Hall sensor element 20 (as an absolute value) is calculated based on the value for the sensitivity-resistance relationship f _SRN (T) associated with the instantaneous temperature value T ₁ and the instantaneous electrical resistance value R ₁ determined.

According to the present concept, a temperature-dependent model f _SRN (T) for the sensitivity-resistance relationship (=resistance-normalized sensitivity) from sensitivity and electrical resistance of the Hall sensor element with temperature T as a variable can be provided. This can be done, for example, by determining, ie retrieving, providing or measuring, a sensitivity value S _N and an electrical resistance value R _N of the Hall sensor element in each case at a plurality of temperature values T _N . This corresponds to a calibration at the temperature values T ₁ , T ₂ , ..., whereby the mathematical model f _SRN (T) for the sensitivity-resistance relationship from sensitivity and electrical resistance of the Hall sensor element with the temperature T as a variable (based on the measured values of the electrical resistance value and the sensitivity at the different temperatures).

Alternatively, it is also possible, for example, to set up the model f _SRN (T) purely by calculation if a “model” of Hall sensor element 20 based on the manufacturing technology used, the respective structure and the semiconductor materials used for the sensor element, etc., is available.

According to the present concept, the instantaneous electrical resistance value R ₁ of the Hall sensor element 20 is now determined based on an impressed control signal (current or voltage impression) S _IN of the Hall sensor element 20, with the instantaneous temperature T ₁ of the active area of the Hall sensor element 20 also being determined. Based on the value for the sensitivity-resistance relationship f _SRN (T), which is assigned to the instantaneous temperature value T ₁ , and the instantaneous electrical resistance value R ₁ , the instantaneous sensitivity S _Hall of the Hall sensor element (as an absolute value) can then finally be determined will.

According to an exemplary embodiment, step 310 of providing can also include a step 350 of determining a sensitivity value S _N and an electrical resistance value R _N of the Hall sensor element at a plurality of temperature values T _N , and also a step 360 of determining the model F _SRN (T) for the sensitivity-resistance relationship from sensitivity and electrical resistance of the Hall sensor element 20 with the temperature T as a variable.

This can be done, for example, by determining a sensitivity value S _N and an electrical resistance value R _N of the Hall sensor element at a plurality of temperature values T _N , ie by retrieving, providing or measuring from a memory 40 accessible to processing device 30 . This corresponds to a calibration at the temperature values T ₁ , T ₂ , ..., whereby the mathematical model f _SRN (T) for the sensitivity-resistance relationship from sensitivity and electrical resistance of the Hall sensor element with the temperature T as a variable (based on the measured values of the electrical resistance value and the sensitivity at the different temperatures).

mit R(T) = elektrischer Widerstandswert bei dem Temperaturwert T
f_SRN(T) = Funktionswert des Widerstand-Empfindlichkeit-Produkts bei dem Temperaturwert T
des Hallsensorelements 20.According to one embodiment, the sensitivity-resistance relationship is a product (= sensitivity-resistance product) of the temperature-dependent sensitivity S(T) and the temperature-dependent electrical resistance value R(T) of the Hall sensor element, with the method 300 also having a step 370 of determining the instantaneous sensitivity S _Hall of the Hall sensor element 20 at the temperature value T based on the following relationship or relationship (formula 13): $$\text{S}\left(\text{T}\right)={\text{f}}_{\text{SRN}}\left(\text{T}\right)/\text{R}\left(\text{T}\right),\left(=\text{current Hall}-\text{sensitivity}\right)$$

with R(T) = electrical resistance value at the temperature value T
f _SRN (T) = functional value of resistance-sensitivity product at temperature value T
of the Hall sensor element 20.

mit R(T) = elektrischer Widerstandswert bei dem Temperaturwert T
f_SRN(T) = Funktionswert des Empfindlichkeit-Widerstand-Quotienten bei dem Temperaturwert T
des Hallsensorelements 20.According to a further exemplary embodiment, the sensitivity-resistance relationship is a quotient (= sensitivity-resistance quotient) of the temperature-dependent sensitivity S(T) and the temperature-dependent electrical resistance value R(T) of the Hall sensor element, with method 300 also having a step 380 of Determining the (instantaneous) sensitivity S(T) of the Hall sensor element at the temperature value T based on the following relationship (formula 14): $$\text{S}\left(\text{T}\right)={\text{f}}_{\text{SRN}}\left(\text{T}\right)*\text{R}\left(\text{T}\right),\left(=\text{current Hall}-\text{sensitivity}\right)$$

with R(T) = electrical resistance value at the temperature value T
f _SRN (T) = function value of the sensitivity-resistance ratio at the temperature value T
of the Hall sensor element 20.

According to one embodiment, the plurality of temperature values T _N can be chosen to obtain an over-determined mathematical model f _SRN (T). This determines the number of temperature points needed to determine the model parameters. If an overdetermined system is assumed, two temperature points are required for a linear relationship, three temperature points for a quadratic relationship, etc.

According to one exemplary embodiment, the model f _SRN (T) can have a linear function, an nth-order polynomial, a Taylor series or an exponential function or some other mathematical relationship.

According to one exemplary embodiment, the operating current S _IN flowing through the Hall sensor element can also be decoupled here, for example, by means of a current mirror circuit 60 in order to determine the electrical resistance value R ₁ .

According to one embodiment, the Hall sensor element 20 can be part of an absolute value-based Hall sensor or measuring system 10, e.g. a magnetic field probe, a current sensor, etc.

According to a possible application scenario, an indirect, magnetically independent sensitivity measurement, e.g. for absolute value-based measurement systems, can be obtained with the method 300.

In the case of measuring systems 10 based on absolute values, such as Hall effect current sensors, for example, it is advantageous to know or to be able to determine the sensitivity S _Hall of the Hall sensor element 20 as precisely as possible at any point in time. So far, this has required a complex calibration of the sensor systems 10 over their entire temperature range. In addition, a reliable measurement of the sensitivities in the later system is not possible without knowing the exact magnetic environmental conditions.

In the above exemplary embodiments (regarding the ratiometric Hall sensors 10 and the associated method 100 for determining an instantaneous sensitivity of a Hall sensor element), it was shown that there is an effective relationship between the magnetic sensitivity S _Hall and the operating variable X, such as the electrical resistance R _Hall , a Hall sensor element 20 there. This relationship can be used to simplify the calibration of the systems or Hall sensors 10 and the sensitivity S _Hall of the Hall sensors 10 or their Hall sensor elements 20 in the subsequent system indirectly via their operating variable X, such as their (respective) electrical resistance R _Hall to eat.

For this purpose, the functional relationship between the sensitivity S _Hall of a Hall sensor element 20 and its operating variable X, such as its electrical resistance R _Hall, is mathematically modeled. The model f _SRN (T) can be a linear function, an nth-order polynomial, an exponential function, or the like. Its parameters include the basic variables sensor sensitivity S _Hall, sensor operating variable X, such as sensor resistance R _Hall , and the temperature T. If a suitable model has been developed, then this determines the number of temperature points required to determine the model parameters (assuming an overdetermined system, e.g. two temperature points with a linear , three for a quadratic connection, etc.).

After the calibration, the mathematical model f _SRN (T) with the measured parameters is stored in the sensor system 10 in the memory 50, for example. In order to be able to determine the sensitivity S _Hall of a Hall sensor element 20 of the sensor system 10, the temperature T and the operating variable X, such as the electrical resistance R _HALL , of the sensor element 20 are measured during operation. The sensitivity is calculated according to the relationship (formula 15): $${\text{S}}_{\text{hello}}\left(\text{T}\right)=\frac{{\text{f}}_{{\text{S}}_{\text{RN}}}\left(\text{T}\right)}{{\text{R}}_{\text{hello}}\left(\text{T}\right)}$$

Thus, the determination of the sensor sensitivity is independent of magnetic influences.

mit der Steigung m, der Temperatur T und dem Achsenabschnitt t. Steigung und Achsenabschnitt werden durch eine Kalibrierung bei zwei Temperaturpunkten bestimmt. In diesem Fall wird die Empfindlichkeit im Sensorsystem gemäß (Formel 17): $${\text{S}}_{\text{Hall}}\left(\text{T}\right)=\frac{\text{m}\ast \text{T}+\text{t}}{{\text{R}}_{\text{Hall}}\left(\text{T}\right)}$$

berechnet. In 7 ist das Ergebnis nach der Kalibrierung bei 25°C und 40°C zu sehen. Die Empfindlichkeitswerte an den restlichen Temperaturpunkten wurden indirekt durch die Messung von Widerstand R_Hall und Temperatur T gemäß Formel 17 berechnet. 7 zeigt einen beispielhaften Verlauf der Abweichung der indirekt gemessenen Hall-Sensor Empfindlichkeit nach Kalibrierung bei 25°C und 40°C zu Messwerten mit Helmholtz Spulen gemäß einem Ausführungsbeispiel.Example: The relationship between sensitivity and resistance of the Hall sensor in 3c is linear. The mathematical model thus results in (formula 16): $${\text{f}}_{{\text{S}}_{\text{RN}}}=\text{m}\ast \text{T}+\text{t}$$

with the slope m, the temperature T and the intercept t. Slope and intercept are determined by calibration at two temperature points. In this case, the sensitivity in the sensor system becomes according to (formula 17): $${\text{S}}_{\text{hello}}\left(\text{T}\right)=\frac{\text{m}\ast \text{T}+\text{t}}{{\text{R}}_{\text{hello}}\left(\text{T}\right)}$$

calculated. In 7 the result can be seen after calibration at 25°C and 40°C. The sensitivity values at the remaining temperature points were obtained indirectly by measuring resistance R _Hall and temperature T calculated according to formula 17. 7 shows an example of the deviation of the indirectly measured Hall sensor sensitivity after calibration at 25° C. and 40° C. compared to measured values with Helmholtz coils according to an exemplary embodiment.

Advantageous aspects of the concept according to the invention, as defined by methods 100, 200 and 300 for determining a sensitivity (S _Hall ) of a Hall sensor element, are presented again below.

The linking of sensitivity and electrical resistance of a Hall sensor element as described here establishes or even enables synchronization of lateral and vertical Hall sensor elements. It is therefore technically possible to implement sensor arrangements, e.g. Thus, the magnetically independent determination of the sensitivity of Hall sensors or Hall sensor elements can be technically implemented using the methods 100, 200, 300 introduced here.

Furthermore, the calibration effort can be simplified for both ratiometric and absolute-value-based systems (Hall sensors) with high accuracy requirements.

The inventive concept according to the methods 100, 200 and 300 is generally applicable to Hall sensor measuring systems, i.e. to ratiometric sensor arrangements, e.g. angle sensors, position sensors, as well as absolute-value-based sensor arrangements, such as current sensors.

By linking electrical resistance and sensitivity of a Hall sensor element, the sensitivity of the Hall sensor or Hall sensor element can be measured indirectly. This enables sensitivity synchronization in 2D or 3D Hall sensors (e.g. ratiometric measurement systems) as well as indirect sensitivity measurement in Hall sensors in general (e.g. absolute value-based measurement systems).

Although some aspects of the present disclosure have been described as features in the context of an apparatus, it is clear that such a description can also be considered as a description of corresponding method features. Although some aspects have been described as features associated with a method, it is clear that such a description can also be regarded as a description of corresponding features of a device or the functionality of a device. Some or all of the method steps may be performed by (or using) hardware apparatus, such as a microprocessor, a programmable computer, or electronic circuitry. In some embodiments, some or more of the method steps may be performed by such an apparatus. Depending on particular implementation requirements, embodiments of the invention may be implemented in hardware, or in software, or at least partially in hardware, or at least partially in software.

In the foregoing Detailed Description, in part, various features were grouped together in examples in order to streamline the disclosure. This type of disclosure should not be interpreted as an intention that the claimed examples have more features than are expressly recited in each claim. Rather, as the following claims reflect, subject matter may lie in less than all features of a single disclosed example. Thus the following claims are hereby incorporated into the Detailed Description, where each claim may stand as its own separate example. While each claim may stand as its own separate example, it should be noted that although dependent claims in the claims refer back to a specific combination with one or more other claims, other examples also include a combination of dependent claims with the subject-matter of each other dependent claim or a combination of each feature with other dependent or independent claims. Such combinations are contemplated unless it is stated that a specific combination is not intended. Furthermore, it is intended that a combination of features of a claim with any other independent claim is also included, even if that claim is not directly dependent on the independent claim.

Although specific example embodiments have been illustrated and described herein, it will be apparent to those skilled in the art that there are a variety of alternative and/or equivalent implementations may be substituted for the specific embodiments shown and illustrated therein without departing from the subject matter of the present application. This application text is intended to cover any adaptations and variations of the specific embodiments described and discussed herein. Therefore, the present application subject matter is limited only by the language of the claims and the equivalent embodiments thereof.

QUOTES INCLUDED IN DESCRIPTION

This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

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• EP 2490037 B1 [0006]
• EP 3341746 B1 [0006]

Claims (30)

Method (100) for determining a sensitivity (S _Hall ) of a Hall sensor element (20) taking into account a functional relationship between the temperature dependency of the sensitivity (S _Hall ) and the temperature dependency of the electrical resistance value (R _Hall = R ₁ ) of the Hall sensor element (20) dependent operating variable (X), with the following steps: determining (110) a reference sensitivity (S ₀ ) and a reference value (X ₀ ) of the operating variable (X) of the Hall sensor element (20), determining (120) an instantaneous value (X ₁ ) of the operating variable (X) of the Hall sensor element (20) based on a control signal (S _IN ) of the Hall sensor element (20), and determining (130) the sensitivity (S _Hall ) of the Hall sensor element (20) based on the reference sensitivity (So), on the reference value ( X ₀ ) of the operating variable (X), on the instantaneous value (X ₁ ) of the operating variable (X) and on the causal relationship. Method (100) according to claim 1 , wherein the operating variable (X) dependent on the electrical resistance value (R _Hall ) of the Hall sensor element (20) is (a) the electrical resistance value (R _Hall ) of the Hall sensor element (20), (b) the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20), (c) in voltage-controlled operation, the supply current of the Hall sensor element (20), (d) in current-controlled operation, the supply voltage of the Hall sensor element 20), or (e) in free-running operation, the electrical resistance value ( R _Hall ) or the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20) based on the supply current and the supply voltage of the Hall sensor element. Method (100) according to claim 1 or 2 , with the following step: determining (140) the sensitivity (S _Hall ) of the Hall sensor element (20) based on the reference sensitivity (S ₀ ) and on the ratio between the reference value (X ₀ ) of the operating variable (X) and the determined instantaneous value (X ₁ ) the operating variable (X) of the Hall sensor element (20). Method (100) according to one of the preceding claims, wherein a change in the ratio between the reference value (X ₀ ) of the operating variable (X) and the determined instantaneous value (X ₁ ) of the operating variable (X) changes the sensitivity (S _Hall ) of the Hall sensor element (20) corresponds. Method (100) according to any one of the preceding claims, further comprising the following step: determining (150) an operating variable sensitivity product (S _XN ) of the Hall sensor element (20) as a product of the reference sensitivity (S ₀ ) and the reference value (X ₀ ) of the Operating variable (X) of the respective Hall sensor element (20) according to the following relationship: $${\text{S}}_{\text{XN}}={\text{S}}_0*{\text{X}}_0\left(=\text{operating group}\ddot{\text{O}}ße-{\text{normalized sensitivity S}}_{\text{hello}}\right)$$

the operating variable (X) dependent on the electrical resistance value (R _Hall =R ₁ ) of the Hall sensor element (20): the electrical resistance value (R _Hall ) of the Hall sensor element (20), in current-controlled operation, the supply voltage of the Hall sensor element (20). , or in free-running operation, the electrical resistance value (R _Hall ) of the Hall sensor element (20) based on the supply current and the supply voltage of the Hall sensor element. Method (100) according to claim 5 , further with the following step: determining (160) the sensitivity (S _Hall ) of the Hall sensor element (20) based on the following relationship: $${\text{S}}_{\text{hello}}={\text{X}}_1/{\text{X}}_0*{\text{S}}_0={\text{S}}_{\text{XN}}/{\text{X}}_1,\left(=\text{current Hall}-\text{sensitivity}\right)$$

where X ₀ = reference value of the operating variable X ₁ = instantaneous value of the operating variable S _XN = operating variable sensitivity product of the respective Hall sensor element. Method (100) according to one of the preceding claims, with the following step: determining (170) the sensitivity (S _Hall ) of the Hall sensor element (20) based on the reference sensitivity (S ₀ ) and on the quotient between the electrical reference value (X ₀ ) of the company size (X) and the determined instantaneous value (X ₁ ) of the Hall sensor element (20); wherein the operating variable (X) dependent on the electrical resistance value (R _Hall = R ₁ ) of the Hall sensor element (20): is the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20), in voltage-controlled operation, the supply current of the Hall sensor element (20 ) or in free-running operation, the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20) based on the supply current and the supply voltage of the Hall sensor element. Method (100) according to any one of Claims 1 until 4 and 7 , further with the following step: determining (180) a sensitivity-operating variable quotient (S _XN ) of the respective Hall sensor element (20) as the quotient of the reference sensitivity (S ₀ ) and the reference value (X ₀ ) of the operating variable (X) of the respective Hall sensor element ( 20) according to the following context: $${\text{S}}_{\text{XN}}={\text{S}}_0/{\text{X}}_0\left(=\text{operating group}\ddot{\text{O}}ße-{\text{normalized sensitivity S}}_{\text{hello}}\right)$$

wherein the operating variable (X) dependent on the electrical resistance value (R _Hall = R ₁ ) of the Hall sensor element (20) is the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20), or in current-controlled operation, the supply voltage of the Hall sensor element (20 ) or in free-running operation, the electrical conductivity value (1/R _Hall ) of the Hall sensor element (20) based on the supply current and the supply voltage of the Hall sensor element. Method (100) according to claim 8 , further with the following step: determining (190) the sensitivity (S _Hall ) of the respective Hall sensor element (20) based on the following relationship: $${\text{S}}_{\text{hello}}={\text{X}}_1/{\text{X}}_0*{\text{S}}_0={\text{S}}_{\text{XN}}*{\text{X}}_1,\left(=\text{current Hall}-\text{sensitivity}\right)$$

where X ₀ = reference value of the operating variable X ₁ = instantaneous value of the operating variable S _XN = sensitivity-operating variable quotient of the respective Hall sensor element (20). Method (100) according to one of the preceding claims, wherein an operating current (S _IN ) impressed into the Hall sensor element (20) is decoupled in order to determine the electrical resistance value (R ₁ ) of the Hall sensor element (20) by means of a current mirror circuit (60). Method (100) for determining the sensitivity of a Hall sensor (10), the Hall sensor (10) having a plurality of Hall sensor elements (20), with the following step: Carrying out (100-1) the method (100) according to one of the preceding claims for the plurality of Hall sensor elements (20) for determining the respective sensitivity of the Hall sensor elements (20) of the Hall sensor (10). Method (100) according to claim 11 , wherein the plurality of Hall sensor elements (20) has at least one Hall sensor element of a first sensor type and a further Hall sensor element of a further sensor type. Method (100) according to claim 12 , wherein the Hall sensor element (20) is a lateral Hall sensor element, and wherein the further Hall sensor element (20 ') is a vertical Hall sensor element. Method (100) according to any one of Claims 11 until 13 , wherein the Hall sensor (10) has a plurality of Hall sensor elements (20) which are designed for the two-dimensional detection of a magnetic field (B) along two linearly independent location vectors or orthogonal location vectors. Method (100) according to any one of Claims 11 until 14 , wherein the Hall sensor (10) has a multiplicity of Hall sensor elements (20) which are designed for the three-dimensional detection of a magnetic field (B) along three linearly independent position vectors or orthogonal position vectors. Hall sensor (10), having the following features: at least one Hall sensor element (20); and a processing device (30) which is designed to carry out the method (100) according to one of the preceding claims. Hall sensor (10) after Claim 16 , wherein the Hall sensor (10) has a plurality of Hall sensor elements (20) and is part of a ratiometric measuring system. Method (200) for determining a sensitivity (S _Hall ) of a Hall sensor element (20), with the following steps: providing (210) a model (F(X,T)) for the sensitivity (S _Hall ) with the operating variable (X) of the Hall sensor element (20) and the temperature (T) as a variable, the operating variable (X) being dependent on the electrical resistance value (R _Hall ) of the sensor element (20), determining (220) an instantaneous value (X ₁ ) of the operating variable (X) of the Hall sensor element (20) based on a control signal (S _IN ) of the Hall sensor element, determining (230) the current temperature (T ₁ ) of the Hall sensor element (20), and determining (240) the current sensitivity (S _Hall ) of the Hall sensor element (20) based on the value of the model associated with the instantaneous temperature value (T ₁ ) and the instantaneous value (X ₁ ) of the operating variable (X). Method (200) according to Claim 18 , wherein the step (210) of providing also has the following steps: determining (250) a sensitivity value (S _N ) and a value (X _N ) of the operating variable (X) of the Hall sensor element (20) in each case at a plurality of temperature values (T _N ), and determining (260) the model (F(X,T)) for the sensitivity (S _Hall ) with the electrical operating variable (X) of the Hall sensor element (20) and the temperature (T) as variables. Method (200) according to any one of claims 18 or 20 , where the plurality of temperature values (T _N ) are chosen to obtain an overdetermined mathematical model (F(X,T)). Method (200) according to any one of claims 18 until 20 , An operating current (S _IN ) flowing through the Hall sensor element (20) being decoupled by means of a current mirror circuit (60) in order to determine the electrical resistance value (R _Hall ). Method (200) according to any one of claims 18 until 21 , wherein the Hall sensor element (20) is part of an absolute value-based Hall sensor (10). Method (300) for determining a sensitivity (S _Hall ) of a Hall sensor element (20), with the following steps: providing (310) a model (f _SXN (T)) for a sensitivity-performance variable relationship from sensitivity (S _Hall ) and performance variable (X) of the Hall sensor element (20) with the temperature (T) as a variable, the operating variable (X) being dependent on the electrical resistance value (R _Hall ) of the sensor element (20), determining (320) an instantaneous value (X ₁ ) of the Operating variable (X) of the Hall sensor element (20) based on a control signal (S _IN ) of the Hall sensor element, determining (330) the current temperature (T ₁ ) of the Hall sensor element (20), and determining (340) the current sensitivity (S _Hall ) of the Hall sensor element (20) based on the value for the sensitivity-operating variable relationship, which is assigned to the instantaneous temperature value (T ₁ ), and the instantaneous value (X ₁ ) of the operating variable (X). Method (300) according to Claim 23 , wherein the step (310) of providing also has the following steps: determining (350) a sensitivity value (S _N ) and a value (X _N ) of the operating variable (X) of the Hall sensor element (20) in each case at a plurality of temperature values (T _N ), and determining (360) the model (f _SXN (T)) for the sensitivity-operating variable relationship from sensitivity (S _Hall ) and electrical operating variable (X) of the Hall sensor element (20) with the temperature (T) as a variable. Method (300) according to Claim 23 or 24 , wherein the sensitivity-operating variable relationship is a product of the temperature-dependent sensitivity (S(T)) and the temperature-dependent electrical operating variable (X(T)) of the Hall sensor element (20), further with the following step: determining (370) the sensitivity ( S(T)) of the Hall sensor element (20) at the temperature value (T) based on the following relationship: $$\text{S}\left(\text{T}\right)={\text{f}}_{\text{SXN}}\left(\text{T}\right)/\text{X}\left(\text{T}\right),\left(=\text{current Hall}-\text{sensitivity}\right)$$

with X(T)=value of the electrical operating variable at the temperature value T f _SXN (T)=function value of the operating variable-sensitivity product at the temperature value T of the Hall sensor element (20). Method (300) according to Claim 23 or 24 , wherein the sensitivity-operating variable relationship is a quotient of the temperature-dependent sensitivity (S(T)) and the temperature-dependent value of the operating variable (X(T)) of the Hall sensor element (20), further with the following step: determining (380) the sensitivity ( S(T)) of the Hall sensor element at the temperature value (T) based on the following relationship: $$\text{S}\left(\text{T}\right)={\text{f}}_{\text{SXN}}\left(\text{T}\right)*\text{X}\left(\text{T}\right),\left(=\text{current Hall}-\text{sensitivity}\right)$$

with X(T)=value of the operating variable at the temperature value T F _SXN (T)=function value of the sensitivity-operating variable quotient at the temperature value T of the Hall sensor element (20). Method (300) according to any one of Claims 23 until 26 , wherein the plurality of temperature values (T _N ) are chosen to obtain an over-determined mathematical model (f _SRN (T)). Method (300) according to any one of Claims 23 until 27 , An operating current (S _IN ) flowing through the Hall sensor element (20) being decoupled by means of a current mirror circuit (60) in order to determine the electrical resistance value (R _Hall ). Method (300) according to any one of Claims 23 until 28 , wherein the Hall sensor element (20) is part of an absolute value-based Hall sensor (10). Hall sensor (10) with the following features: a Hall sensor element (20); and a processing device (30) for carrying out the method (200; 300) according to any one of claims 18 until 29 is trained.

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