DE102019120972B4 - Arrangement for power control - Google Patents

Abstract

Power semiconductor module (10) with a first semiconductor element (12) and with a second semiconductor element (14) and a first input electrode (16) and a second input electrode (18), the first semiconductor element (12) and the second semiconductor element (14) between the The first input electrode (16) and the second input electrode (18) are electrically connected in series, the first input electrode (16) forming an envelope around the first semiconductor element (12) and the second semiconductor element (14) and one end of the second input electrode (18 ) is arranged within the sheath and wherein the second input electrode (18) is electrically insulated from the first input electrode (16), a first cooling element (30) being arranged inside the sheath, which is connected to the first and / or the second semiconductor element (12 , 14) is thermally connected, characterized in that the first cooling element (30) between the first semiconductor element (12) and d em second semiconductor element (14) is arranged and is electrically connected to the first and the second semiconductor element (12, 14).

Description

The present invention relates to a power semiconductor module with semiconductor elements. Semiconductor elements in power electronics have, for example, switches, diodes, transistors or thyristors.

In the US 2012/0 112 366 A1 describes a power electronics module with semiconductor elements and with a first input electrode and a second input electrode. Positive potential is applied to one of the input electrodes and negative potential is applied to the second input electrode. A structure of the module is described in which the negative potential is applied to an inner conductor that is surrounded by a waveguide with the positive potential. Semiconductor elements are electrically connected between the inner conductor and the waveguide.

In addition, from the US 2009/0 231 810 A1 a power semiconductor module with the features of the preamble of claim 1 is known.

In contrast, the performance of the power semiconductor module is to be increased by an improved structure, in particular in order to provide power semiconductor modules for higher voltages, higher currents and / or higher powers.

This object is achieved by a power semiconductor module according to patent claim 1.

The power semiconductor module has a first semiconductor element and a second semiconductor element. A positive potential is applied to one input electrode, for example the first, and a corresponding negative potential is applied to the other input electrode, for example the second. The first semiconductor element and the second semiconductor element are electrically connected in series between the first input electrode and the second input electrode. In this case, the first semiconductor element is arranged, for example, between the first input electrode and the second semiconductor element and the second semiconductor element is arranged between the first semiconductor element and the second input electrode. According to the invention, the first input electrode forms an envelope around the first semiconductor element and the second semiconductor element, one end of the second input electrode being arranged within the envelope and the second input electrode being electrically insulated from the first input electrode. The envelope surrounds the first and the second semiconductor element preferably completely with passages for necessary contacts, eg. B. the second input electrode. In one embodiment of the invention, the casing can only partially surround the first and the second semiconductor element. With such a module structure, a low-inductance structure can be implemented, as a result of which conduction losses and switching losses of the semiconductors can be kept low.

According to the invention, a first cooling element is arranged within the envelope, which is thermally connected to the first and / or the second semiconductor element. Efficient cooling of the first and / or second semiconductor element can be achieved via the first cooling element. A liquid preferably flows through the cooling element, so that the dissipation of heat from the power semiconductor module is further improved. A preferred arrangement of the first cooling element within the envelope and between the first and the second semiconductor element can ensure that the heat is dissipated at a point where a particularly large amount of heat is generated.

According to the invention, the first cooling element is also electrically connected to the first and the second semiconductor element, so that the first cooling element not only dissipates heat, but also ensures the electrical connection in the series circuit of the first and second semiconductor element. In a further embodiment of the invention, the first cooling element is electrically connected to an output electrode, the output electrode being passed through the covering from inside the covering to outside the covering and being electrically insulated from the covering. For this purpose, the casing has an insulated passage for the output electrode. Such an arrangement enables an intermediate tap for the output electrode between the first and second semiconductor element. To implement a voltage converter, for example, a direct voltage at the input electrodes can be converted into an alternating voltage at the output electrode. The electrical connection of the output electrode to the first cooling element results in an efficient construction and the avoidance of expensive components.

In one embodiment of the invention, a capacitor and a resistor are connected in series between the first input electrode and the output electrode, wherein the resistor connected in series with the capacitor is thermally connected to the first cooling element Connection. The capacitor is preferably electrically connected to the first input electrode and the resistor is electrically connected to the output electrode. Alternatively or additionally, a capacitor and a resistor are connected in series between the second input electrode and the output electrode, the resistor connected in series with the capacitor being in thermal connection with the first cooling element. The capacitor is preferably electrically connected to the second input electrode and the resistor is electrically connected to the output electrode. The resistors mentioned are also called snubber resistors. The capacitors mentioned are also called snubber capacitors. The snubber resistors and the snubber capacitors are preferably arranged outside the envelope.

In a further embodiment of the invention, the first and the second semiconductor element and the first and the second input electrode are designed to be contacted in the tensioning association. In a clamping bandage for semiconductor elements, the semiconductor elements are stacked on top of one another, with a pressure contact plate each being arranged above and below. For example, springs are used to mechanically tension the elements between the pressure contact plates, thereby establishing electrical contact. The direction in which the semiconductor elements in the stack are pressed against one another, for example by the spring forces, is referred to as the tensioning direction. This is, for example, from above in the tension bandage downwards in the tension bandage.

In one embodiment of the tensioning association, for example, the second input electrode is located in front of the second semiconductor element in the tensioning direction. At the same time, the second semiconductor element is arranged in front of the first semiconductor element in the tensioning direction. Further in the tensioning direction, the first semiconductor element is located in front of the first input electrode and is contacted on its rear side in the tensioning direction with the first input electrode. The first input electrode at the same time surrounds the first and the second semiconductor element in the form of an envelope. This realizes the series connection of the first semiconductor element and the second semiconductor element between the first input electrode and the second input electrode.

In a further embodiment of the invention, the envelope is designed as a hollow cylinder, the axis of which extends in the tensioning direction. The envelope, which is formed by the first input electrode, also has a cover at each of the flat ends of the hollow cylinder. In the tensioning direction, this corresponds to the front and rear ends of the hollow cylinder. The envelope, for example both covers and the hollow cylinder, are formed by the first input electrode. If this is at the positive potential, the casing, for example the hollow cylinder with its lids, also has this positive potential. This results in good electromagnetic shielding for the power semiconductor module.

In a further preferred embodiment of the invention, a second cooling element is provided on the power semiconductor module, which is arranged outside the casing and is in thermal connection with the casing. This enables a further improved cooling of the power semiconductor module. It is particularly advantageous here if the first input electrode, that is to say the casing, is electrically insulated from the second input electrode by means of a ceramic material. The ceramic material ensures good to very good electrical insulation with a very good thermal connection at the same time. In this way, very good electrical insulation can be ensured at the same time as a very good thermal connection between the second cooling element and the semiconductor elements. In one embodiment of the invention, the second cooling element can be arranged in front of the envelope in the tensioning direction and can be in thermal contact with the front cover of the hollow cylinder. A liquid preferably flows through the second cooling element in order to further increase the cooling performance.

Optionally, a third cooling element can also be provided, which is arranged behind the envelope in the tensioning direction and is in thermal contact with the rear cover of the hollow cylinder. The cooling of the power semiconductor module can be further improved by the third cooling element. A liquid preferably flows through the third cooling element in order to further increase the cooling performance.

In one embodiment of the invention, the power semiconductor module has a third and a fourth semiconductor element, the first, the second, the third and the fourth semiconductor element being connected in series between the first input electrode and the second input electrode. The first input electrode forms an envelope around the first, the second, the third and the fourth semiconductor element. The second input electrode is electrically insulated from the first input electrode and makes contact with the series circuit of the semiconductor elements within the envelope. A possible series connection of the semiconductor elements is that the third semiconductor element is arranged between the first input electrode and the first semiconductor element and the fourth semiconductor element is arranged between the second semiconductor element and the second electrode

In the embodiment with a third and a fourth semiconductor element, it is advantageous to arrange a fourth and a fifth cooling element within the envelope. In this case, the fourth cooling element is preferably arranged between the third semiconductor element and the first semiconductor element and is in line with the first and the third Semiconductor element in thermal and electrical contact. The fifth cooling element is preferably arranged between the second semiconductor element and in the fourth semiconductor element and is in thermal and electrical contact with the second and the fourth semiconductor element. As a result, the cooling can be further ensured with an increased number of semiconductor elements. A liquid preferably flows through the fourth and fifth cooling elements in order to further increase the cooling performance.

In a preferred embodiment of the invention, the first and the second semiconductor element are each arranged in a press-pack cell. In addition, the third and fourth semiconductor elements are also preferably arranged in each case in a press-pack cell. Press-pack cells are disc-shaped elements in which semiconductor elements, e.g. B. semiconductor chips are arranged and which are suitable to be contacted between pressure contact plates in a clamping system. Press-tag cells have contact plates on their upper and lower sides, via which contact can be made with the semiconductor elements.

The semiconductor elements each have, for example, a controllable semiconductor switch to which a freewheeling diode is connected in parallel. Such controllable semiconductor switches are, for example, transistors or thyristors, in particular IGBTs or SiC transistors. The structure described is also particularly suitable for high-performance modules with fast switching times, high voltages and high power. For example, AIN or PTFE or liquid insulating materials can be used as electrical insulators.

• 1 einen Schnitt durch ein Beispiel eines Leistungshalbleitermoduls im Spannverbund;
• 2 ein Ersatzschaltbild für die Anordnung aus 1;
• 3 eine Ansicht von der Seite auf die Anordnung aus 1;
• 4 eine Ansicht von oben auf die Anordnung aus 1;
• 5 einen Schnitt durch ein zweites Beispiel eines Leistungshalbleitermoduls im Spannverbund;
• 6 einen Schnitt durch ein drittes Beispiel eines Leistungshalbleitermoduls im Spannverbund.

Further features and advantages of the invention emerge from the following description of non-restrictive exemplary embodiments of the invention, which are explained in more detail below with reference to the figures. In the figures, the same reference symbols denote elements that are the same or have the same effect. They show schematically:

• 1 a section through an example of a power semiconductor module in the tension assembly;
• 2 an equivalent circuit diagram for the arrangement 1 ;
• 3 a view from the side of the arrangement 1 ;
• 4th a top view of the arrangement 1 ;
• 5 a section through a second example of a power semiconductor module in the tension assembly;
• 6th a section through a third example of a power semiconductor module in the tension connection.

1 shows a longitudinal section through a power semiconductor module 10 in the clamping connection. The cut is in the direction of the tensioning direction 36 shown. The power semiconductor module 10 has a first semiconductor element 12th and a second semiconductor element 14th on. The first semiconductor element 12th and the second semiconductor element 14th are contacted in series in the clamping connection. Between the first semiconductor element 12th and in the second semiconductor element 14th is a first cooling element 30th arranged. In the example shown, it is at the first input electrode 16 a positive potential. There is a negative potential at the second input electrode. The first input electrode 16 is through an insulation layer 22nd opposite the second input electrode 18th electrically isolated. The input electrode 16 surrounds the first semiconductor element 12th and the second semiconductor element 14th as well as the first cooling element 30th in the form of a wrapper. The first input electrode 16 and the second input electrode 18th consist of metal, preferably copper or aluminum. The sheath is preferably made of the same material as the first input electrode 16 .

The first cooling element 30th is by means of a thermal and an electrical contact surface 28 with the first semiconductor element 12th and the second semiconductor element 14th connected. This creates the electrical series connection between the first semiconductor element 12th and in the second semiconductor element 14th ensured, as well as the thermal connection with the first cooling element 30th so that it can dissipate heat. The first cooling element is preferred 30th Made of aluminum with a liquid flowing through it to improve the cooling effect. The housing of the cooling element 30th is through one through one insulation 22nd isolated passage in the casing to the outside and goes into the output electrode 20th above. This enables a center tap between the first and the second semiconductor element 12th , 14th . The insulation between the first cooling element 30th and the envelope is covered by two layers of insulation 22nd realized.

In 1 is the cladding covered by the first input electrode 16 is formed, shown in section. The second input electrode 18th is due to the negative potential. The second input electrode 18th is through one through one insulation 22nd insulated passage led into the envelope and through another through the insulation 22nd isolated passage again led out of the envelope to a capacitor 32 to contact. The second input electrode 18th is opposite the first input electrode 16 through an insulating layer 22nd isolated. The clamping connection with the clamping direction 36 has a pressure contact plate at the top and bottom 26th on. The power semiconductor module shown 10 further has a capacitor 24 on, the one at the input between positive potential at the first input electrode 16 and negative potential at the second input electrode 18th is switched. The output side is between the input electrodes 16 , 18th and the output electrode 20th one capacitor each 32 and a resistance 34 connected in series. The capacitors 32 are also known as snubber capacitors. The resistances 34 are also known as snubber resistors. The resistances 34 are in electrical connection with the output electrode. With the cooling element 30th can use the two snubber resistors 34 are in electrical and thermal connection. This has the advantage that the resistors 34 which are often heavily loaded, also by the cooling element 30th can be effectively cooled.

In 2 is an equivalent circuit diagram for the arrangement of 1 shown. The first input electrode can be seen 16 here with a positive input voltage and the second input electrode 18th here with negative input voltage. The output electrode is also shown 20th at which the alternating voltage generated by the voltage converter can be tapped. A first semiconductor switch is shown 56 with a free-wheeling diode connected in parallel 38 . The first semiconductor switch 56 is controllable. A second semiconductor switch is shown 58 with a free-wheeling diode also connected in parallel 40 . The second semiconductor switch can also be controlled. The semiconductor switch 56 and the second semiconductor switch 58 are for example bipolar transistors with an insulated gate electrode, IGBT, or SiC transistors. The first semiconductor element 12th includes the first semiconductor switch 56 as well as the first freewheeling diode 38 . The second semiconductor element 14th includes the second semiconductor switch 58 as well as the second freewheeling diode 40 . The first semiconductor element 12th and the second semiconductor element 14th are implemented in a separate disk cell, for example. A disc cell is, for example, a press-pack cell that can be used in a tension assembly. The first semiconductor element 12th and the second semiconductor element 14th are in series between the positive voltage on the first input electrode 16 and the negative voltage in the second input electrode 18th switched. In parallel with this is the capacitor 24 switched. At the output there is a capacitor between the first input electrode and the output electrode 32 in series with a resistor 34 switched. Between the second input electrode 18th under output electrode 20th is a capacitor and a resistor 34 connected in series. The capacitors 32 are also known as snubber capacitors. The resistances 34 are also known as snubber resistors.

In 3 Figure 3 is a view from the side of the assembly 1 to see. It can be seen that the power semiconductor module 10 in the clamping connection with the clamping direction 36 has an enclosure extending through the input electrode 16 is formed. In the example shown, the envelope is designed in the form of a hollow cylinder. The axis of the hollow cylinder runs in the clamping direction 36 . You can also see that the 2nd input electrode 18th insulated is passed into the interior of the sheath and is guided out of the sheath again to one of the capacitors 32 to contact. The output side is outside the envelope between the input electrodes 16 , 18th and the output electrode 20th one capacitor each 32 and a resistance 34 connected in series. The capacitors 32 are also known as snubber capacitors. The resistances 34 are also known as snubber resistors. The resistances 34 are in electrical connection with the output electrode. With the cooling element 30th can use the two snubber resistors 34 are in electrical and thermal connection. This has the advantage that the resistors 34 , which are often heavily loaded, also by the cooling element 30th can be effectively cooled.

In 4th is a plan view of the power semiconductor module of 1 and 3 shown. The line AB is shown, through which the intersection of 1 is led. The input electrode can be seen from above 16 , the capacitor 24 , as well as the upper pressure contact plate 26th . The direction of supervision in 4th corresponds to the tensioning direction here 36 . The 4 threaded rods can be seen from above 60 with which the two pressure contact plates 26th be tensioned to form the prestressed connection.

5 shows a further example of a power semiconductor module in a sectional illustration. The cutting direction corresponds to the clamping direction 36 . Compared to the exemplary embodiment 1 are also a second cooling element 44 and a third cooling element 46 arranged in a tensioning system. The cooling elements 44 and 46 are also preferably flowed through by a liquid in order to improve the cooling effect. In the example shown is the second input electrode 18th opposite the first input electrode 16 electrically isolated, but by an insulating layer 42 which is also very good heat conductor. The insulation layer 42 is preferably a ceramic layer. The second cooling element 44 and the third cooling element 46 are arranged outside the envelope, but are in thermal communication with it in order to dissipate heat from the interior of the envelope.

In 6th is another example of a power semiconductor module 10 shown. A section through the power semiconductor module is shown 10 with direction of cut in clamping direction 36 of the prestressed connection. Compared to the in 5 The example shown has the power semiconductor module 10 additionally a third semiconductor element 48 and a fourth semiconductor element 50 on. The third, first, second and fourth semiconductor elements 48 , 12th , 14th , 50 are between the first input electrode 16 and the second input electrode 18th connected in series. The third semiconductor element 48 is between the first input electrode 16 and the first semiconductor element 12th arranged. Between the third semiconductor element 48 and the first semiconductor element 12th is a fourth cooling element 52 arranged that the third semiconductor element 48 and the first semiconductor element 12th electrically connects. At the same time, the fourth cooling element leads 52 Heat off. A fourth semiconductor element is between the second semiconductor element 14th and the second input electrode 18th arranged. A fifth cooling element 54 is between the second semiconductor element 14th and the fourth semiconductor element 50 arranged. The fifth cooling element 54 connects the second semiconductor element 14th and the fourth semiconductor element 50 electrically and dissipates heat at the same time. There are more capacitors on the output side 32 and resistances 34 switched outside of the envelope as shown. Here, too, the resistors are preferred 34 thermal with cooling elements 30th , 52 , 54 connected so that heat can also be efficiently dissipated from the resistors.

The 4th cooling element 52 and the 5th cooling element 54 are also both led out through isolated from the envelope. The isolation is done by insulating layers 22nd . The second input electrode is also in this exemplary embodiment 18th opposite the first input electrode 16 through a ceramic insulating layer 42 isolated. The ceramic insulating layer 42 electrically insulates and at the same time conducts heat well. This serves to optimize heat dissipation through the second cooling element 44 that the outside rests on a flat side of the envelope.

The arrangement according to the invention disclosed herein is not restricted to the embodiments disclosed herein, but rather also includes further embodiments which have the same effect and which result from technically meaningful further combinations of the features of the circuit arrangement described herein. In particular, the features and feature combinations mentioned hereinabove in the general description and the description of the figures and / or shown alone in the figures can be used not only in the combinations explicitly specified herein, but also in other combinations or alone, without the scope of the present invention to leave.

List of reference symbols

10

Power semiconductor module

12th

first semiconductor element

14th

second semiconductor element

16

first input electrode

18th

second input electrode

20th

Output electrode

22nd

insulation

24

capacitor

26th

Pressure contact plate

28

thermal + electrical contact surface

30th

first cooling element

32

Snubber capacitor

34

Snubber resistance

36

Direction of tension

38

first freewheeling diode

40

second freewheeling diode

42

ceramic insulation

44

second cooling element

46

third cooling element

48

third semiconductor element

50

fourth semiconductor element

52

fourth cooling element

54

fifth cooling element

56

controllable power semiconductor switch

58

controllable power semiconductor switch

60

Threaded rod

Claims (14)

Power semiconductor module (10) with a first semiconductor element (12) and with a second semiconductor element (14) and a first input electrode (16) and a second input electrode (18), the first semiconductor element (12) and the second semiconductor element (14) between the The first input electrode (16) and the second input electrode (18) are electrically connected in series, the first input electrode (16) forming an envelope around the first semiconductor element (12) and the second semiconductor element (14) and one end of the second input electrode (18 ) is arranged within the envelope and wherein the second input electrode (18) opposite the first input electrode (16) is electrically insulated, a first cooling element (30) being arranged within the envelope, which is thermally connected to the first and / or the second semiconductor element (12, 14), characterized in that the first cooling element (30) between the first semiconductor element (12) and the second semiconductor element (14) is arranged and is electrically connected to the first and the second semiconductor element (12, 14). Power semiconductor module according to Claim 1 , characterized in that the first cooling element (30) is in electrical connection with an output electrode (20), the output electrode (20) being passed through the covering from inside the covering to outside the covering and being electrically insulated from the covering. Power semiconductor module according to Claim 2 , characterized in that a capacitor (32) and a resistor (34) are connected in series between the first input electrode (16) and the output electrode (20) and / or between the second output electrode (18) and the output electrode (20), wherein the resistor (34) is in thermal communication with the first cooling element (30). Power semiconductor module according to one of the preceding claims, characterized in that the first and the second semiconductor element (12, 14) and the first and the second input electrode (16, 18) are designed to be contacted in the tensioning association. Power semiconductor module according to Claim 4 , characterized in that the second input electrode (18) is arranged in front of the second semiconductor element (14) in the tensioning direction (36) and that the second semiconductor element is arranged in front of the first semiconductor element in the tensioning direction (36). Power semiconductor module according to one of the Claims 4 or 5 , characterized in that the cover is designed as a hollow cylinder, the axis of which extends in the tensioning direction (36), the cover being capped by the first input electrode (16) at the front end in the tensioning direction (36) and the rear end in the tensioning direction (36) . Power semiconductor module according to one of the preceding claims, characterized in that a second cooling element (44) is provided, which is arranged outside the casing and is in thermal connection with the casing. Power semiconductor module according to Claim 7 , characterized in that the first input electrode (16) is electrically insulated from the second input electrode (18) by means of a ceramic material. Power semiconductor module according to one of the Claims 7 or 8th , characterized in that the second cooling element (44) is arranged in front of the envelope in the tensioning direction (36) and is in thermal contact with the front cover of the hollow cylinder. Power semiconductor module according to one of the Claims 7 to 9 , characterized in that a third cooling element (46) is provided, which is arranged behind the envelope in the tensioning direction (36) and is in thermal contact with the rear cover of the hollow cylinder. Power semiconductor module according to one of the preceding claims, characterized by a third semiconductor element (48) and a fourth semiconductor element (50), wherein the first, the second, the third and the fourth semiconductor element (12, 14, 48, 50) between the first input electrode ( 16) and the second input electrode (18) are connected in series, and the first input electrode (16) forms an envelope around the first, second, third and fourth semiconductor elements (12, 14, 48, 50). Power semiconductor module according to Claim 11 , characterized in that a fourth and a fifth cooling element (52, 54) are provided within the envelope, the fourth cooling element (52) being arranged between the third semiconductor element (48) and the first semiconductor element (12) and with the first and the third semiconductor element (12, 48) is in thermal and electrical contact, and the fifth cooling element (54) is arranged between the second semiconductor element (14) and the fourth semiconductor element (50) and with the second and the fourth semiconductor element (14, 50) ) is in thermal and electrical contact. Power semiconductor module according to one of the preceding claims, characterized in that the first and the second semiconductor element (12, 14) are each arranged in a press-pack cell. Power semiconductor module according to one of the preceding claims, characterized in that the first and the second semiconductor element (12, 14) each have a controllable semiconductor switch (56, 58) to which a freewheeling diode (38, 40) is connected in parallel.

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