DE102018222727A1 - Semiconductor module for a converter arrangement, converter arrangement for a vehicle and vehicle with a converter arrangement - Google Patents

Abstract

The invention relates to a semiconductor module (1) for a converter arrangement (10), comprising a first module part (2), the first module part (2) being designed according to a T-NPC design, the semiconductor module (1) having a second module part (3 ), and wherein the second module part (3) comprises a half bridge (4). The invention further relates to a converter arrangement (10) with at least one such semiconductor module (1) and a vehicle (50) with such a converter arrangement (10).

Description

The invention relates to a semiconductor module for a converter arrangement, a converter arrangement for a vehicle and a vehicle with a converter arrangement.

Power converters are used to convert a current from a direct current to an alternating current or an alternating current to a direct current. Power converters are also used to convert parameters of the current, such as a voltage and / or a frequency. Frequently used variants of the converter are rectifiers, inverters, power controllers or converters.

The conversion takes place with the help of high-performance semiconductors, with transistors or thyristors, in particular metal oxide semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs) and integrated gate-commutated thyristors (IGCTs) being used. These switching transistors are usually operated in binary mode and therefore have two switching states ("on" or "off"). However, “soft” switching with slowly rising edges can also be provided. A power converter usually includes a large number of these switching transistors. The currents are converted by timing the switching states of these switching transistors with the aid of predetermined pulse patterns.

In the field of electromobility, concepts for the electrification of the drive train of commercial vehicles are also increasingly being developed. However, an insufficient energy density of the energy storage used is a problem. One solution to the problem is to provide electrical energy from the outside via a catenary system or via a wireless, inductively operating system. The energy store can then be charged during a journey. However, large amounts of energy have to be transported from the overhead line or the inductive system into the vehicle, which leads to corresponding requirements in the design and dimensioning of the components of the converters used. However, sections of the route where no external power supply is available pose a problem.

From the DE 10 2017 203 065 A1 A converter component for a motor vehicle is known, the converter component having at least one power electronics component that is used multiple times and which either either contributes to the functionality of a drive converter or contributes to the functionality of a boost converter. The converter component is designed in particular in the form of a semiconductor module in the T-NPC RB IGBT design.

The invention is based on the technical problem of creating a semiconductor module, a converter arrangement for a vehicle and a vehicle with such a converter arrangement, which are simple and compact and in which the charging of a high-voltage battery can be improved by means of an external energy supply.

The technical problem is solved according to the invention by a semiconductor module with the features of claim 1, a converter arrangement with the features of claim 5 and a vehicle with the features of claim 10. Advantageous embodiments of the invention result from the subclaims.

In particular, a semiconductor module for a converter arrangement is created, comprising a first module part, the first module part being designed according to a T-NPC design, and the semiconductor module having a second module part, the second module part comprising a half bridge.

Furthermore, in particular a converter arrangement for a vehicle is created, comprising at least one such semiconductor module.

Furthermore, in particular a vehicle is created, comprising such a converter arrangement.

It is one of the basic ideas of the invention to provide a semiconductor module which is simple and compact and yet can be used in a scalable manner and flexibly in a converter arrangement. For this purpose, in particular a first module part and a second module part are designed to be electrically separate from one another. By separating into a first and a second module part, the semiconductor module can be designed for a specific application by means of an external connection of the individual module parts. In particular, concrete converter arrangements can be formed by using a plurality of semiconductor modules in the form of a stack or stack. By separating the individual module parts, it is also possible to group electronic components (eg the chip dies) of the individual module parts. In particular, this makes it possible to combine different technologies, such as Si-IGBTs and SiC-MOSFETs, with one another in a simple manner. The semiconductor module is particularly compact. For this purpose, the semiconductor module has, in particular, a housing which is compact in terms of shape and dimensions and has electrical taps which can be contacted or connected from the outside. Due to the compact design, a Stacking and cooling of the semiconductor module on both sides possible.

In the simplest case, a converter arrangement comprises only a single semiconductor module according to the invention. This semiconductor module can then be used, for example, for simple control of two electrical machines. However, a converter arrangement can also have further semiconductor modules.

In one embodiment it can be provided that the first module part is designed in the T-NPC RB design.

In one embodiment it is provided that the first module part comprises two serial switching transistors, each with anti-parallel diodes, and two anti-parallel switching transistors with reverse blocking capability, and a diode, the serial switching transistors having a low-side tap and a high-side tap and at a center point with a module tap are connected, the two antiparallel switching transistors being connected to a center tap and a module tap, and the diode being connected to a module tap on the cathode side and to the low side tap internally on the module side.

In an alternative embodiment it is provided that the first module part is designed in the T-NPC design, the first module part comprising two serial switching transistors, each with anti-parallel diodes, and two serial opposite-pole switching transistors, each with anti-parallel diodes, and one diode. The serial switching transistors are connected to a low-side tap, a high-side tap and at a center point to a module tap. The two serial opposite-pole switching transistors are connected to a center tap and a module tap. The diode is connected to a module tap on the cathode side and to the lowside tap internally on the module side.

It can be provided here that the switching transistors are designed as IGBTs. However, it can also be provided that the switching transistors are alternatively designed as MOSFETs, in particular based on silicon carbide (SiC). The use of SiC-MOSFETs is particularly advantageous with regard to the losses that occur during switching and the possibility of using higher switching frequencies. In principle, combinations of IGBTs and MOSFETs are also possible when forming the module parts.

The vehicle is in particular a motor vehicle, in particular a commercial vehicle. In particular, it is provided that the vehicle is an at least temporarily electrically driven vehicle, which has a high-voltage battery and furthermore receives electrical energy from the outside via an overhead line system and / or a wireless, inductively operating system.

In one embodiment it is provided that the second module part is designed according to a three-level NPC design. The series connection of switching transistors in the three-level NPC design can in particular reduce the requirements for the nominal voltages of individual switching transistors. The nominal voltages of the switching transistors can remain at the usual 600/650 V, even if an input voltage is increased. Furthermore, thermal losses can be distributed over a larger number of switching transistors, which can increase the service life of the switching transistors.

In a further embodiment, it is provided that the second module part comprises four serial switching transistors, each with anti-parallel diodes, and two serial diodes, which inner ones of the serial switching transistors are connected anti-parallel, the serial switching transistors having a low-side tap, a high-side tap and a module tap at a center point and wherein the serial diodes have a center tap at a center point.

In one embodiment of the converter arrangement, it is provided that the converter arrangement comprises three semiconductor modules, the first module parts being connected in such a way that they jointly form a multilevel converter for driving an electrical machine, and the second module parts being connected in such a way that they jointly combine one Train DC converters. One of the three semiconductor modules is assigned to a phase of the electrical machine. This is particularly advantageous in the case of an external energy supply via a catenary system or a wireless, inductively operating system, because such a connection can be used to convert a DC voltage provided on the input side by means of the DC voltage converter to a charging voltage of a high-voltage battery in the vehicle or an operating voltage of the multilevel converter. For this purpose, the switching transistors of the half bridges of the second module parts of the individual semiconductor modules are controlled accordingly. If, for example, a catenary system provides a voltage of 1200 V, the DC-DC converter can convert it to a charging voltage or operating voltage of, for example, 800 V or 600 V (nominal) by appropriate control. In principle, other voltages can also be provided, for example 650 V, 800 V, 1200 V, 1700 V or 3300 V on the input side, pointing on the output side High-voltage batteries usually have charging and operating voltages in the range of 400 V or in the range of 800 V. The multilevel converter and the DC / DC converter can be activated, for example, in a manner known per se by means of a control of the converter arrangement. The controller can be designed as a combination of hardware and software, for example as program code that is executed on a microcontroller or microprocessor.

In a further embodiment of the converter arrangement it is provided that the first module parts are connected in such a way that they either contribute completely to a functionality of the multilevel converter or partly to the functionality of a boost converter and partly to the functionality of the multilevel converter. If the converter arrangement is in the divided operating mode, a high-voltage battery of the vehicle can also be charged with greater power using the boost converter with a reduced engine output. In particular, depending on the selected interconnection, the first module part can work in a 3-level operating mode according to the T-NPC or T-NPC RB IGBT design or in a 2-level operating mode, the components which are also used in the 3-level operating mode , in particular two serial opposite-pole switching transistors in the T-NPC design or the anti-parallel switching transistors in the T-NPC RB IGBT design can be used as part of the boost converter. The boost converter can additionally include further components such as an inductor. Despite this increased functionality, a particularly compact construction of the semiconductor modules can be achieved, since electronic components of the semiconductor modules can be used together for both functionalities. As a result, the complexity of the semiconductor modules and the converter arrangement can be reduced, since overall a number of electronic components required for forming the converter arrangement can be reduced.

In a further embodiment of the converter arrangement, it is provided that the first module parts are each coupled to a controllable switching means, the controllable switching means being designed such that, depending on the control, the first module parts are divided into the functionality of the multilevel converter or into the divided functionality of the boost Switch the converter and the multilevel converter. Corresponding module taps are provided on the semiconductor module for connecting the first module parts to the controllable switching means. The switching means can be designed, for example, as controllable contactors.

In a further embodiment of the converter arrangement, it is provided that the converter arrangement comprises a switching control for controlling the switching means, the switching control being designed to control the controllable switching means as a function of an energy supply available on a route ahead. For example, provision can be made for a route map to be provided to the shift control by a navigation device of the vehicle, route sections being stored in the route map on which an external energy supply is provided, for example by means of an overhead line system. If the vehicle moves to a section of the route on which no external energy supply is provided, the switching controller switches the switching means to the split operating mode, so that the high-voltage battery for the remaining route with external energy supply provided is charged with an increased charging power by means of the boost converter . At the beginning of the following section of the route, where no external energy supply is provided, the high-voltage battery then has a larger charge than would have been the case with normal charging power. The embodiment therefore enables predictive charge control of the high-voltage battery. Even when the vehicle is idle, the split operating mode can be used to charge the high-voltage battery with an increased charging capacity. The switching controller can be designed as a combination of hardware and software, for example as program code, which is executed on a microcontroller or microprocessor.

• 1 eine schematische Darstellung einer Ausführungsform des Halbleitermoduls für eine Stromrichteranordnu ng;
• 2 eine schematische Darstellung einer weiteren Ausführungsform des Halbleitermoduls für eine Stromrichteranordnung;
• 3 eine schematische Darstellung einer Ausführungsform der Stromrichteranordnung.

The invention is explained in more detail below on the basis of preferred exemplary embodiments with reference to the figures. Here show:

• 1 a schematic representation of an embodiment of the semiconductor module for a converter arrangement;
• 2nd a schematic representation of a further embodiment of the semiconductor module for a converter arrangement;
• 3rd is a schematic representation of an embodiment of the converter arrangement.

In 1 is a schematic representation of an embodiment of the semiconductor module 1 shown for a converter arrangement. The semiconductor module 1 comprises a first module part 2nd and a second module part 3rd .

The first module part 2nd is designed according to a T-NPC RB design and comprises two serial switching transistors T1 , T2 each with anti-parallel diodes D1 , D2 , and two anti-parallel switching transistors T3 , T4 with reverse blocking ability and one diode D3 . The serial switching transistors T1 , T2 are with a lowside tap LS1 , a highside tap HS1 and at a midpoint with a module tap M1 connected. The two anti-parallel switching transistors T3 , T4 are with a center tap N1 and a module tap M2 connected. The diode D3 is on the cathode side with a module tap M3 and on the anode side inside the module with the low-side tap LS1 connected.

The second module part 3rd includes a half bridge 4th . The second part of the module 2nd or the half bridge 4th are trained in a three-level NPC design. The second part of the module 2nd includes four serial switching transistors T5 , T6 , T7 , T8 each with anti-parallel diodes D5 , D6 , D7 , D8 and two serial diodes D9 , D10 what internal switching transistors T6 , T7 are connected in anti-parallel. The serial switching transistors T5 , T6 , T7 , T8 have a lowside tap LS2 , a highside tap HS2 and a module tap at a center point M4 on. The serial diodes D9 , D10 have a center tap at a center point N2 on.

In principle, the half-bridge 4th be designed differently, for example as a two- or five-level half-bridge, the taps LS2 , HS2 , N2 , M4 and if necessary further taps are then designed accordingly.

The switching transistors Tx can be designed as IGBTs. In particular, the anti-parallel switching transistors T3 , T4 be designed as anti-parallel IGBT RBs. However, it can also be provided that the switching transistors T5 , T6 , T7 , T8 are designed as IGBTs, the other switching transistors T1 , T2 , T3 , T4 however, as SiC MOSFETs. SiC MOSFETs have the advantage of lower losses and also enable higher switching frequencies.

Additional low-voltage taps are provided for the control of the individual switching transistors Tx, but these are not shown for the sake of clarity.

The semiconductor module 1 is especially designed to easily with other similar semiconductor modules 1 , in particular in the form of a stack or stack. For this purpose, the semiconductor module 1 a compact in terms of shape and dimensions on (not shown), which also connecting means for arranging the semiconductor module 1 can have on a rail and / or in a stack or stack etc. In this way, for example, a semiconductor module can be used for each phase of an electrical machine 1 be provided.

In a simple version, the semiconductor module 1 can be used, for example, to control or drive two electrical machines.

In 2nd is a schematic representation of a further embodiment of the semiconductor module 1 shown for a converter arrangement. The semiconductor module 1 is largely identical to that in the 1 Embodiment shown, same reference numerals designate the same features and terms.

In contrast to that in the 1 The embodiment shown is the first module part 2nd of the semiconductor module shown 1 designed according to a classic T-NPC design and includes two serial switching transistors T1 , T2 each with anti-parallel diodes D1 , D2 , two serial opposite pole switching transistors T3 , T4 each with anti-parallel diodes D11 , D12 and a diode D3 . Otherwise, the interconnection and structure of the semiconductor module 1 equal to that in the 1 illustrated embodiment.

In 3rd is a schematic representation of an embodiment of the converter arrangement 10 shown. The converter arrangement 10 is in a vehicle, for example 50 , in particular a commercial vehicle.

The converter arrangement shown 10 serves one of a catenary system 20 Voltage provided for charging a high-voltage battery 21st and to drive an electrical machine 22 to walk. In the embodiment shown is that of the overhead line system 20 Provided voltage 1200 V and is the converter arrangement 10 about Sagittarius 23 and chokes 24th fed. The charging voltage of the high-voltage battery 21st is in the range of 800 V. In principle, the converter arrangement 10 but can also be operated at other voltages.

The converter arrangement 10 comprises three semiconductor modules 1 , which have the structure according to the in 1 shown embodiment correspond. The three semiconductor modules are used to illustrate how they work 1 separated in function to clarify the functionality, the first module parts 2nd and the second module parts 3rd are shown in groups.

The second module parts 3rd together form a DC-DC converter 11 from (DC / DC converter) with which the from the overhead line system 20 provided voltage to a charging voltage of the high-voltage battery 21st can be changed. The individual taps of the second module parts 3rd are for the sake of clarity only for one of the first module parts 3rd shown the taps and the interconnection of the other first module parts 3rd are but trained analogously to this. The highside taps HS2 are with a highside potential HS + connected. The low taps LS2 of the individual half bridges 4th are with the earth potential GND connected. The center taps N2 of the second module parts 3rd are at one midpoint one of two capacitors C1 , C2 formed intermediate circuit and are therefore at an intermediate voltage between the highside potential HS + and the earth potential GND . The respective center points of the serial switching transistors are above the respective module taps M4 connected to each other via interposed inductors and provide an intermediate voltage as lowside potential LS + ready.

The high-voltage battery 21st is with a plus pole with the lowside potential LS + and with a negative pole with the earth potential GND connected.

The first module parts 2nd together form an inverter 12th for driving the electrical machine 22 , each with a semiconductor module 1 one of the phases of the electrical machine 22 assigned. The taps of the first module parts 2nd are for the sake of clarity only for one of the first module parts 2nd shown the taps and the interconnection of the other first module parts 2nd but are designed analogously to this. The highside taps HS1 are with the lowside potential LS + connected. The low taps LS1 are with the earth potential GND connected. The center taps N1 are about one as a contactor S0 formed switching means in a drive operating mode with an intermediate voltage at a center point of one of two capacitors C3 , C4 formed intermediate circuit or in a boost operating mode with the highside potential HS + connected. The module taps M2 can be used as contactors S1 , S2 , S3 trained switching means in the drive operating mode with the module tap M1 and in the Boost operating mode with the module tap M3 and one with the lowside potential LS + connected inductance LA , LB , LC connect.

Between the DC converter 11 and the converter 12th is an intermediate circuit capacitor C5 arranged.

In the drive operating mode, the converter 12th Operated in three-level operating mode, all switching transistors of the first module part are involved in the conversion. In contrast, in the boost operating mode, the converter is only operated in the two-level operating mode. The anti-parallel switching transistors form together with the inductors LA , LB , LC a boost converter, which enables the high-voltage battery 21st to charge with an increased charging capacity.

The switching means or the contactors S0 , S1 , S2 , S3 are controllable and can, for example, by a switching control 13 can be controlled. For the sake of clarity, there are no control lines to the switching devices or contactors S0 , S1 , S2 , S3 shown.

It can be provided that the switching control 13 the controllable switching means or contactors S0 , S1 , S2 , S3 controlled depending on an energy supply available on a route ahead. This can charge the high-voltage battery 21st can be set with increased charging power in the boost operating mode in order, for example, to pre-charge the high-voltage battery with an increased charging power before a section of the route without external energy supply. For this, the switching control 13 for example from a navigation device of the vehicle 50 a route map 30th are provided in which sections of the route are stored on which an external energy supply is available. If the vehicle approaches a section of the route in which no external energy supply is available, the high-voltage battery can then be switched to the boost operating mode in advance 21st to charge with the increased charging power.

The advantage of the converter arrangement described 10 is that by designing the semiconductor modules 1 an extremely compact design is possible. In addition, the possibility to control between a full 3-level operating mode of the converter 12th and a 2-level operating mode of the converter 12th with additional boost function for charging the high-voltage battery 21st switching with increased charging power, electronic components can be saved as part of the first module parts 2nd can be used for both functionalities. This can result in a complexity in the design of the converter arrangement 10 can be reduced and both installation space and costs and effort can be saved.

The in the 3rd shown converter arrangement 10 can in principle also be used with the semiconductor modules 1 according to the in the 2nd Realize the embodiment shown, an interconnection takes place accordingly.

Reference list

1

Semiconductor module

2nd

first module part

3rd

second part of the module

4th

Half bridge

10th

Power converter arrangement

11

DC converter

12th

Converter

13

Switching control

20

Catenary system

21

High-voltage battery

22

electrical machine

23

Contactor

24th

throttle

30th

Route map

50

vehicle

HS1

Highside tap (first module part)

LS1

Lowside tap (first module part)

HS2

Highside tap (second module part)

LS2

Lowside tap (second module part)

HS +

Highside potential

LS +

Lowside potential

GND

Earth potential

M1

Module tap

M2

Module tap

M3

Module tap

M4

Module tap

N1

Center tap

N2

Center tap

T1

Switching transistor

T2

Switching transistor

T3

Switching transistor

T4

Switching transistor

T5

Switching transistor

T6

Switching transistor

T7

Switching transistor

T8

Switching transistor

D1

diode

D2

diode

D3

diode

D4

diode

D5

diode

D6

diode

D7

diode

D8

diode

D9

diode

D10

diode

D11

diode

D12

diode

C1

capacitor

C2

capacitor

C3

capacitor

C4

capacitor

C5

capacitor

LA

Inductance

LB

Inductance

LC

Inductance

S0

controllable contactor (switching means)

S1

controllable contactor (switching means)

S2

controllable contactor (switching means)

S3

controllable contactor (switching means)

QUOTES INCLUDE IN THE DESCRIPTION

This list of documents listed by the applicant has been generated automatically and is only included for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent literature cited

• DE 102017203065 A1 [0005]

Claims (10)

Semiconductor module (1) for a converter arrangement (10), comprising: a first module part (2), the first module part (2) being designed according to a T-NPC design, characterized in that the semiconductor module (1) has a second module part (3 ), the second module part (3) comprising a half bridge (4). Semiconductor module (1) after Claim 1 , characterized in that the first module part (2) two serial switching transistors (T1, T2), each with anti-parallel diodes (D1, D2), and two anti-parallel switching transistors (T3, T4) with reverse blocking capability, and a diode (D3) The serial switching transistors (T1, T2) are connected to a low-side tap (LS1), a high-side tap (HS1) and at a center point to a module tap (M1), the two anti-parallel switching transistors (T3, T4) being connected to a center tap ( N1) and a module tap (M2) are connected, and the diode (D3) is connected on the cathode side to a module tap (M3) and on the anode side module-internally to the low-side tap (LS). Semiconductor module (1) according to one of the preceding claims, characterized in that the second module part (3) is designed according to a three-level NPC design. Semiconductor module (1) after Claim 3 , characterized in that the second module part (3) four serial switching transistors (T5, T6, T7, T8), each with anti-parallel diodes (D5, D6, D7, D8), and two serial diodes (D9, D10), which inner of serial switching transistors (T6, T7) are connected in anti-parallel, the serial switching transistors (T5, T6, T7, T8) having a low-side tap (LS2), a high-side tap (HS2) and a module tap (M4) at a center point, and wherein the serial diodes (D9, D10) have a center tap (N2) at a center point. Converter arrangement (10) for a vehicle (50), comprising: at least one semiconductor module (1) according to one of the Claims 1 to 4th . Converter arrangement (10) after Claim 5 , characterized in that the converter arrangement (10) three semiconductor modules (1) according to one of the Claims 1 to 4th The first module parts (2) are connected in such a way that they jointly form a multilevel converter (12) for driving an electrical machine (22), and the second module parts (3) are connected in such a way that they together form a DC / DC converter (11) train. Converter arrangement (10) after Claim 6 , characterized in that the first module parts (2) are connected in such a way that they either contribute completely to a functionality of the multilevel converter (12) or partly to the functionality of a boost converter and partly to the functionality of the multilevel converter (12). Converter arrangement (10) after Claim 7 , characterized in that the first module parts (2) are each coupled to a controllable switching means (S1, S2, S3), the controllable switching means (S1, S2, S3) being designed such that, depending on the control, the first module parts (2) to switch into the functionality of the multilevel converter (12) or into the divided functionality of the boost converter and the multilevel converter (12). Converter arrangement (10) after Claim 8 , characterized in that the converter arrangement (20) comprises a switching control (13) for controlling the switching means (S ₁ , S ₂ , S ₃ ), the switching control (13) being designed as a function of one available on a route ahead to control the controllable switching means (S1, S2, S3) when the power supply is stationary. Vehicle (50) with a converter arrangement (20) according to one of the Claims 5 to 9 .

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