DE102018111428A1 - RF multiplexer - Google Patents

Abstract

A radio frequency multiplexer (210, 220, 230) includes transmit and receive circuits, each including an RF filter circuit (211, 212, 221, 227, 231, ..., 234). The transmit and receive circuits are connected to an antenna port (225, 245) and corresponding transmit and receive ports (221, 222). A part of the transmitting circuit and a part of the receiving circuit are arranged on a single die (213, 226, 250). The layer stacks of the resonators of the transmitting and receiving circuits, which are arranged on the single die, can be optimized for the required functionality.

Description

Technical area

The present disclosure relates to a high frequency multiplexer. More particularly, the present disclosure relates to a radio frequency (RF) multiplexer circuit comprising transmitting and receiving circuits each including an RF filter.

background

Radio frequency (RF) multiplexers are used in electronic communication systems at the antenna front end to connect the transmit and receive paths to the antenna. The transmit and receive paths include RF filters to select the desired bandwidth from the antenna signal or to provide the RF signal to the antenna. Resonators are used to set up the filters. A duplexer connects a transmit and a receive path to an antenna port, while a higher order multiplexer, such as a quadlex, connects multiple transmit and receive paths to the antenna port.

In conventional RF multiplexers, the resonators forming the RF transmit (Tx) and receive filters (Rx) are realized on separate chips. Typically, one chip includes all the resonators for the Tx filter and another chip includes all the resonators for the Rx filter. Although different resonators in a filter perform different electrical subfunctions, they are manufactured using the same manufacturing process, making them difficult to optimize for a specific function. For example, the resonators of the Tx filter near the input terminal may have limitations in slew rate and noise modes in the frequency bands of the other carrier beam bands, while the resonators near the antenna port provide large reflection in the opposite band frequency ranges. These requirements limit the design flexibility for the resonators when all resonators of a filter path are performed by a multiplexer on a chip, as is usually the case.

There is a desire to have more flexibility in designing a multiplexer circuit and to improve the performance of the filters in an RF multiplexer.

It is an object of the present disclosure to provide a high frequency multiplexer circuit having improved performance.

It is another object of the present disclosure to provide an RF multiplexer circuit having improved power stability in conjunction with improved reflection in the backbone frequency ranges.

Summary

According to the present disclosure, one or more of the above-mentioned objects is achieved by a radio frequency multiplexer comprising: a transmission circuit and a reception circuit each comprising an RF filter circuit; a first terminal to be connected to an antenna, wherein the transmission circuit and the reception circuit are connected to the first terminal; a second terminal connected to the transmission circuit, a third terminal connected to the reception circuit; wherein a part of the transmitting circuit and a part of the receiving circuit are arranged on a single monocrystalline substrate.

According to the present disclosure, a part of the transmitting circuit and a part of the receiving circuit are arranged on a single die. Accordingly, parts of two different filter paths of a multiplexer use the same single die. This differs from traditional solutions where a die is set to a filter path to send ( Tx ) or to receive ( Rx ) is limited. The single die may be a monocrystalline substrate on which the parts of the transmitting and receiving circuits are realized. The layer stacks realizing the resonators of the transmitting and receiving circuits are equal within a die, since the resonators on a die are simultaneously fabricated using the same process steps as deposition, patterning and the like. Sharing the same single die for the transmit and receive circuitry allows resonators having corresponding functionality in different filters to be fabricated together. The layer stack of the resonators can be optimized for the required functionality.

With this approach, improved performance of all multiplexer functions can be expected. For example, on the one hand, filter edges with high slope requirements and a low temperature coefficient and, on the other hand, resonators that require large reflection directly at the antenna node in the backbone frequency ranges can be realized on different dies. The layer stacks on different dies can be optimized for the different functionalities. For example, the thickness of metallic or dielectric layers in the stacked layers for a large slope and a low temperature coefficient or alternatively for a large Gegenbandreflexion be optimized. The expert knows from experience with conventional designs how to optimize the layer stacks for the required functionalities.

The transmit and receive circuits in a multiplexer each comprise a plurality of resonators, such as surface acoustic wave resonators (SAW resonators) or bulk acoustic wave resonators (BAW resonators). In accordance with the principles of the present disclosure, at least one resonator of the transmit circuit and at least one resonator of the receive circuit are disposed on a same single die. When the filter path is realized with SAW resonators, the die is a monocrystalline piezoelectric substrate on which the SAW resonators are formed. All resonators on the same single Die together use the common and same monocrystalline substrate. The monocrystalline piezoelectric substrate may be a lithium niobate or a lithium tantalate or other piezoelectric substrate useful for forming a SAW resonator. When the filter is realized with BAW resonators, the monocrystalline substrate may be a monocrystalline silicon, on which the layer stack of the BAW resonator is formed.

The resonators connected to the antenna terminal of the TX filter and the Rx filter can be realized on the same single die. This allows the optimization of the layer stack to achieve a large reflection in the opposite bands, which lie outside the passband of the corresponding filter. This is particularly useful in carrier beam filter systems of the 4G (LTE) communications standard.

The transmit filter and the receive filter may comprise a series path of resonators containing one or more resonators connected in series. The serially connected resonators of the TX filter and the series resonators of the Rx filter connected to the antenna terminal are realized on the same die. The Tx filter may also include one or more parallel paths connected to the row path and also located on the single die along with the series resonators near the antenna terminal. Accordingly, the parallel-connected Tx resonators have the same layer stack as the resonators at the antenna terminal. This layer stack can be optimized for a large reflection in the Gegenbandfrequenzbereichen. Additional serially connected resonators of the TX filter, such as the resonators near the input terminal of the Tx filter, can be realized on a separate die so that they can be optimized for a steep filter edge and high power stability. Steep filter edges and high power resistance usually require a low temperature coefficient so that the heat generated by the power output of the Tx filter does not shift the resonant frequency. However, a large reflection in the opposite bands is usually contradictory to a low temperature coefficient and a high power resistance, so that the counter-band reflection can be optimized with the layer stack of the resonators connected to the antenna. As a result, the series-connected resonators connected to the Tx terminal are realized on a die separate from the resonators connected to the antenna terminal, the latter being the resonators of the Tx filter and the Rx filter share. The layer stacks of both dies are optimized for different functionalities, which on the one hand have power resistance, high edge steepness, and low temperature coefficient, and on the other hand, large reflection in the opposite bands. In particular, the temperature coefficient for the resonators connected to the antenna terminal and sharing the same ones is greater than the temperature coefficient of the resonators connected to the Tx input terminal and sharing another die.

The principles of the present disclosure may be used with a duplexer circuit or with more complex multiplexer circuits such as quadplexers or even higher order multiplexers. For example, a quadplex may include two Tx ports and two Rx ports that combine the transmit and receive signals at one antenna port. The resonators connected to the antenna terminal of at least one Tx and one Rx filter or of the two Tx and the two Rx filters can be realized on a single die. The series-connected resonators of the two Tx connections can be realized on another die. The layer stacks of the resonators of the two separate dies can be optimized for different functionalities. The first die may also comprise the parallel-connected resonators of the Tx filters. Other elements of the Rx filters can also be realized on the first die. In particular, the series-connected resonators in the vicinity of the respective Tx terminals of different Tx paths are realized on the same single Die. Furthermore Further resonators of the Tx and Rx paths are realized on a different but single die. Advantageously, the layer stacks of the resonators of different Tx and Rx paths can be optimized for the same functionality. The number of elements and the size of the circuit are substantially the same as in conventional solutions, with the Tx or Rx filters being realized on different dies.

According to one embodiment, the layer stack of a SAW resonator is covered with a dielectric layer, such as silicon dioxide. The thickness of the dielectric layer may be a compromise between the power resistance and a low temperature coefficient on the one hand and a large reflection in the opposite bands on the other hand. A larger thickness of the dielectric layer stands for a long power resistance and a low temperature coefficient. However, the relatively thick dielectric layer may also be acoustically excited, so that the reflection may be low. The resonators on the die that are optimized for long power stability and low temperature coefficient, such as the resonators near a Tx input terminal, may include a thick dielectric layer, such as a thick silicon dioxide layer. The silicon dioxide layer may have a thickness in the range of about 800 nanometers (nm). On the other hand, the dielectric layer of the resonators connected to the antenna terminal can be optimized for less reflection in the opposite bands, sacrificing the power resistance and the low temperature coefficient. In this case, the dielectric layer is substantially thinner and may have a thickness in the range of about 400 nanometers (nm). The dielectric layer for resonators having a long power resistance and a low temperature coefficient may be twice as thick as a dielectric layer for resonator having a low reflection at opposite band frequencies.

The principles of the present disclosure may also be applied to BAW resonators disposed on the same die with a piezoelectric substrate such as an aluminum nitride sandwiched between two metal electrodes. A reflection device, such as a Bragg mirror, can be placed between the common substrate and the bottom electrode. All resonators of the same single die have the same layer stack with layers having the same thickness across different resonators arranged on the same die. In this case, the monocrystalline substrate may be monocrystalline silicon.

It is to be understood that both the foregoing general description and the following detailed description are merely exemplary in nature and are to be understood to provide a summary or framework for understanding the nature and character of the claims. The accompanying drawings are included to provide a better understanding and are incorporated in and constitute a part of this specification. The drawings illustrate one or more embodiments and, together with the description, serve to explain the principles and function of the numerous embodiments. The same elements in different figures of the drawings are denoted by the same reference numerals.

list of figures

• 1 eine herkömmliche Realisierung eines Duplexers und eines Quadplexers;
• 2 zwei mögliche Realisierungen eines Duplexers und eines Quadplexers gemäß den Prinzipien der vorliegenden Offenbarung;
• 3 ein detailliertes schematisches Blockschaltbild eines Duplexers gemäß den Prinzipien der vorliegenden Offenbarung;
• 4 ein Admittanzdiagramm und ein Reflexionskoeffizientendiagramm eines herkömmlichen Duplexers aus 1 und des Duplexers aus 3 gemäß den Prinzipien der vorliegenden Offenbarung;
• 5 ein detailliertes schematisches Blockschaltbild eines Quadplexers gemäß den Prinzipien der vorliegenden Offenbarung; und
• 6 eine Querschnittsdarstellung eines Abschnitts eines Dies, der mehrere Resonatoren zeigt, und einen vergrößerten Querschnitt eines Abschnitts eines SAW-Resonators.

In the drawings shows:

• 1 a conventional implementation of a duplexer and a quadplexer;
• 2 two possible implementations of a duplexer and a quadplexer in accordance with the principles of the present disclosure;
• 3 a detailed schematic block diagram of a duplexer according to the principles of the present disclosure;
• 4 an admittance diagram and a reflection coefficient diagram of a conventional duplexer 1 and the duplexer 3 in accordance with the principles of the present disclosure;
• 5 a detailed schematic block diagram of a quadplexer according to the principles of the present disclosure; and
• 6 a cross-sectional view of a portion of a die, which shows a plurality of resonators, and an enlarged cross section of a portion of a SAW resonator.

Detailed description

The present disclosure will now be described in more detail with reference to the accompanying drawings, which show preferred embodiments of the invention. However, the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments discussed herein. Rather, these embodiments are provided so that the disclosure will fully convey the scope of the invention to those skilled in the art. The drawings are not necessarily drawn to scale, but they are designed to clearly depict the disclosure.

1 shows the realization of a conventional duplexer and a conventional quadplexer. The duplexer 110 includes a connection 125 which is connected to an antenna. An input connection 121 is transmitted with a signal to be transmitted ( Tx ) and the connection 122 represents the filtered received signal ( Rx ) ready. The filters 111 . 112 are between an antenna terminal 125 and the Tx - Rx Vices 121 . 122 arranged. According to the conventional principles, the filter becomes 111 realized with a plurality of resonators, for example, surface acoustic wave resonators (SAW resonators), which are all realized and arranged on a chip. The resonators of the Tx filter 111 share the same monocrystalline piezoelectric substrate on which the layers of the resonators are arranged. Similarly, the Rx filter includes 112 several SAW resonators, all arranged on the same die. The Tx - and Rx -Filter 111 . 112 are arranged on two separate dies or chips.

The quadplexer 130 includes an antenna connector 145 and two Tx transmit ports 141 . 142 and two Rx receive ports 143 . 144 , The appropriate filters, the Tx / Rx connectors 141 , ..., 144 are assigned are each realized on separate single chips. No resonator from a Tx or Rx filter is realized on the chip of another Rx or Tx filter.

2 shows two possible implementations of RF duplexers and RF quadplexers according to embodiments of the present disclosure. The duplexer 210 includes an antenna connector 225 , a Tx connection 221 and a Rx connection 222 , The Rx filter 212 includes several resonators, all of which are arranged on a chip. The Tx filter 214 includes a plurality of resonators, of which a first portion of resonators 213 on the same chip as the Rx filter 212 is arranged. The other part of resonators 211 of the Tx filter 214 is arranged on a second separate chip. The chips 213 . 214 are applied to a laminate which may comprise a polymeric substrate having one or more layers of metallic wires to provide electrical conductivity.

The duplexer shows a further division of the resonators in the Tx and Rx filters. A first portion of the resonators of the Tx and Rx filters 221 . 222 will be on a first chip 226 realized. The corresponding resonators are connected to the antenna connection in such a way that their layer stack for the electrical requirements for resonators connected to antennas can be optimized appropriately. A second portion of resonators is on a second chip 227 realized so that the layer stack can be optimized to meet other electrical requirements. The layer stack of the resonators on the chip 227 For example, it can be optimized to meet the requirements for the Tx portion of the duplexer.

The quadplexer 230 shows a further division of the resonators in the filters of the quadplexer. The quadplexer 230 includes four filters for four bands, the Tx filters 232 . 233 and Rx filters 231 . 234 are. The resonators of all four filters connected to the antenna connector 245 are connected on a single chip 250 realized. The chip 250 includes the resonators of the four different filters connected to the antenna connector 245 are connected. A second chip 253 includes the rest of the resonators of the Rx filter 231 and a portion of the resonators of the Tx filter 232 , Another chip 252 includes the rest of the resonators of the Rx filter 234 and a portion of the resonators of the Tx filter 233 , Yet another chip 251 includes a portion of the resonators of the Tx filters 232 . 233 ,

The allocation of the resonators to the corresponding chips depends on the functionality. Resonators that perform a similar function in different filters can be assigned to the same chip so that they can be fabricated with the same layer stack. In practice, the sequence of layers and the thicknesses of the layers are the same for the resonators realized on the same chip. Therefore, the corresponding layer stacks can be optimized for the desired function. In terms of the duplexer 210 can the resonators of the chip 214 be made with a layer stack suitable to handle a high transmission power at the terminal 221 entered into the Tx filter. The chip 227 of the duplexer 220 can be fabricated with a layer stack optimized to process inner flanks of the Tx and Rx filters with a low temperature coefficient and outer sections with a greater spacing between the poles and zeros. The chip 250 of the quadplexer 230 can be made with a layer stack having good reflection in the counterband areas, which is convenient for the resonators connected to the antenna node. The chip 251 may include a layer stack that causes the inner edges of the directly adjacent filters to have a low temperature coefficient and a small distance between the poles and the zeros. The chip 252 includes a layer stack useful to realize resonators that achieve the required bandwidth. The layer stack of the chip 252 is useful for resonators that have a lower critical function, so they can be made with a moderate stack of layers, the good general has electrical properties to provide the required bandwidth. Overall, the allocation of the resonators to respective chips takes into account the electrical function realized by the resonators, rather than the allocation to specific filter passbands according to the conventional solutions.

In the 3 and 4 will now be a detailed presentation of the realization of the duplexer 210 of the 2 ( 3 ) in conjunction with the electrical behavior according to the admittance and reflection coefficient curves obtained by a circuit simulation ( 4 ). Corresponding curves are for the conventional duplexer 110 out 1 and the duplexer 210 out 2 according to the present disclosure.

The first chip 214 includes the series-connected resonators 311 . 312 . 313 connected to the Tx connector 221 are connected. The resonator 311 is directly connected to the Tx connector 221 connected and the resonators 312 . 313 are connected downstream of the resonator 311 connected. The second chip 213 includes serially connected resonators of the Rx path such as the resonators 320 . 321 . 322 . 323 and the parallel resonators of the Rx path, such as the resonators 324 . 325 , The chip 213 also includes the resonator 314 of the Tx path connected to the antenna connector 225 is connected and connected downstream of the series-connected resonator 313 is. The chip 213 also includes the resonators 315 . 316 . 317 , which the parallel resonators of the Tx filter 211 are. The resonator 317 is for example between the nodes between the resonators 313 and 314 and the ground potential switched. Similarly, the resonators are 315 . 316 between a node in the row path of the Tx filter 211 and the ground potential switched.

The series resonators 311 . 312 . 313 that are connected to or connected to the Tx input terminal receive significant input power, so they must be configured as power stable. They also form the right flank 411 of the passband 410 of the filter. The right flank must be as steep as possible to ensure good transmission in the desired signal band 212 to allow and a large attenuation in the adjacent, unwanted signal band 413 to reach. In order to achieve a long power stability, it is expedient to realize resonators which have a low temperature coefficient, so that the heating of the resonators by the transmission of the RF signal shifts only insignificantly the right edge of the passband. In order to achieve a defined right flank of the passband, it is expedient to realize resonators which have a relatively small distance between the poles and the zeroes of the admittance characteristics of the resonators.

The layer stack, the resonators 311 . 312 . 313 realized is configured to achieve the above-mentioned characteristics. In the first place, this requires a relatively thick dielectric layer covering the metal electrodes of the interdigital transducers (IDTs) of the SAW resonators. A thick dielectric layer may be a silicon dioxide layer covering the IDTs and having a thickness in the range of about 800 nm. By realizing the resonators 311 . 312 . 313 on the single chip, the layer stacks of these resonators including the relatively thick silicon dioxide layer can be optimized for these resonators. The layer stacking properties are limited to these resonators since a thick silicon dioxide layer need not be useful for other resonators in the duplexer that are responsible for other functions of the filter. In this regard, the parallel-connected resonators receive 315 . 316 . 317 of the Tx filter 211 less power than the series-connected resonators 311 . 312 . 313 , In addition, the parallel resonators are not responsible for a steep slope, so it is not necessary that the resonators 315 . 316 . 317 have a low temperature coefficient. Instead, the resonators 315 . 316 . 317 responsible for providing sufficient bandwidth for the passband of the filter. It is expedient, the resonators connected in parallel 315 . 316 . 317 not to be integrated on the chip, because the resonators connected in parallel compared to the series-connected resonators 311 . 312 . 316 have to meet other requirements.

The parallel-connected resonators 315 . 316 . 317 and moreover, the series-connected resonator 314 that goes directly to the antenna node 225 connected on a second chip 213 realized that different from the chip 214 is. In addition, the Rx filter is the resonators 320 , ..., 325 also on the second chip 213 arranged. This means that resonators of two filters, the Tx filter 211 and the Rx filter 212 , are arranged on a single die or chip. The layer stack of the resonators 314 , ..., 325 meets different requirements than the layer stack of resonators 311 , ..., 313 so that the layer stack of the second chip 213 is optimized to have a low plate mode and a large reflection in the backbone frequencies outside the passband of the filter. To achieve this effect, the dielectric layer is the IDTs of the resonators 314 , ..., 325 covering, considerably thinner than the dielectric layer of the Resonators of the chip 214 , A silicon dioxide layer on the resonators of the chip 213 For example, it has a thickness of about 400 nm, which is half the thickness of the dielectric layer containing the IDTs of the chip 214 covers. A thin dielectric layer reduces the plate mode of the resonators by preventing acoustic energy from being coupled into the dielectric layer. In addition, the reflection in the opposite band frequencies is increased.

In 4 can now have the effect on the disk mode in the area 420 be taken from the damping curve. In that area 420 the attenuation curve has a local maximum. The curve 421 represents the damping curve of the conventional duplexer 110 out 1 and the curve 422 represents the damping for the duplexer 210 in accordance with the principles of this disclosure 4 can be taken is the attenuation of the curve 422 in that area 420 lower than the conventional curve 421 , This is achieved primarily in that the resonator 314 that with the antenna connector 225 connected on the second chip 213 which is optimized by having a smaller thickness of the silicon dioxide dielectric layer covering the IDTs. As a result, the disk mode becomes in the frequency domain 420 reduced.

Since also the reflection coefficient in the same frequency range 420 interested, it is noted that the conventional duplexer 110 the curve 431 which has a local minimum in the frequency domain 420 shows. In contrast, the reflection curve points 432 of the duplexer 210 According to the present disclosure, a relatively high level. The improved reflection is also achieved in that the resonator 314 on the chip 213 having a silicon dioxide layer with a small thickness in the range of about 400 nm, in order to increase the reflection behavior in the Gegenbandfrequenzbereiche.

In 5 Turning now to a schematic block diagram of a quadplexer in accordance with the principles of the present disclosure. The quadplexer includes an antenna connector 545 , two Rx connectors 521 . 522 and two Tx transmit ports 523 . 524 , The resonators in the quadplex realize four filters, such as the Rx filters 531 . 532 , and the Tx filters 533 . 534 , The resonators are on three chips 550 . 551 . 552 realized. The chips 550 and 551 include resonators of multiple filters. The chip 550 includes resonators from all Rx and Tx filters. On the chip 550 In particular, at least the resonators are arranged with the antenna connection 545 are connected. The chip 551 includes resonators from the two Tx filters 533 . 534 , The chip 551 includes in particular the resonators connected in series and those with the Tx input terminals 523 . 524 the Tx filter 533 . 534 are connected. The chip 552 includes the rest of the resonators of the Rx filters 532 , The chip 550 also includes the parallel-connected resonators of the Tx filters 533 . 534 and the Rx filter 531 , The serially connected resonators of the Tx filters 533 . 534 Form a steep right filter edge and need to be able to handle adequate power so that they are together on the common chip 551 which is optimized for processing high power and a low temperature coefficient. The resonators connected to the antenna of all four filters are on the chip 550 which is optimized for a low plate mode and a comparatively large reflection in the opposite bands. The resonators of the chip 552 have loose requirements so they can be assigned to a separate chip. The size of the overall circuit of the quadplexer is not larger than for the conventional design. On the other hand, the functional allocation of the resonators of different filters to a common chip allows the stack of layers of the resonators to be optimized for the specific function of the corresponding resonator so as to increase the overall filter performance, including power processing capacity and temperature stability, as discussed earlier in US Pat Correlation with the admittance and reflection curves of the 4 was explained.

In 6 Now, a cross-section through a chip is shown, comprising three resonators. 6 in particular shows a cross section through the chip 214 of the 3 along the line 600 , In the 6 is a cross-sectional view of the resonators 311 . 312 . 313 and the substrate or the chip 214 shown. A section 610 of the right resonator 313 is in an enlarged view on the right side of the 6 shown. The substrate 214 may be a monocrystalline piezoelectric substrate such as lithium niobate or lithium tantalate. On the substrate 214 is a part of an Interdigital Transducer (IDT) 620 arranged. The electrode structure of the IDT comprises a lowermost layer 621 , which may be a titanium soak layer, for adhesion of the metal electrode disposed thereon 622 to enable. The metal electrode 622 includes a composition of copper and aluminum. The IDT is through a silicon dioxide layer 623 covered. A compromise between a power stability and a low temperature coefficient of the resonator on the one hand and a high Gegenbandreflexion and a low plate mode on the other hand can be achieved by a suitable thickness of the silicon dioxide layer 622 is selected. A greater thickness of the layer 622 allows a low temperature coefficient and a long power resistance, while a thinner layer 622 provides a low disk mode and a large reflection in the counter-band frequencies. Accordingly, the resonators connected to the Tx input terminals are disposed on a chip having a thick silicon dioxide layer of, for example, about 800 nm. A thin (in 6 Not shown) silicon nitride layer having a thickness of about 100 nm may be useful as a passivation layer covering the silicon dioxide layer. The resonators, which are connected to the antenna terminal, are arranged on a chip, which is manufactured with a relatively thin silicon dioxide layer, for example, about 400 nm.

The present disclosure is also useful for implementing filters with bulk acoustic wave (BAW) resonators. BAW resonators are placed on a monocrystalline substrate, such as a silicon monocrystalline substrate. The resonators comprise a piezoelectric substrate, such as an aluminum nitride, which is packed between upper and lower electrodes. A reflective element, such as a Bragg mirror, may be disposed between the lower electrode and the monocrystalline substrate. The teachings discussed above in the context of SAW resonators are to be applied to the BAW resonators accordingly. Specifically, the BAW resonators disposed on a single chip or substrate have the same layer stack and the same thicknesses of the layers and the layer stack including the top dielectric layer such as the silicon dioxide layer. According to the present disclosure, the layer stack is optimized for different purposes, such as long power stability and low temperature coefficient, or large counterband reflection and low disk mode.

It will be apparent to those skilled in the art that numerous changes and variations can be made without departing from the spirit and scope of the disclosure as defined in the appended claims. As those skilled in the art may perceive variations, combinations, sub-combinations, and variations that may include the disclosed embodiments, spirit and spirit of the disclosure, it is to be understood that the disclosure includes everything that comes within the scope of the appended claims.

Claims (15)

Radio frequency multiplexer comprising: a transmitting circuit (211, 534) and a Receive circuitry (212, 531) each comprising an RF filter circuit; a first terminal (225, 545) to be connected to an antenna, the transmission circuit and the reception circuit being connected to the first terminal; a second terminal (221, 524) connected to the transmitting circuit; a third terminal (222, 521) connected to the receiving circuit; wherein a part of the transmitting circuit and a part of the receiving circuit are arranged on a single monocrystalline substrate (213, 550). High-frequency multiplexer after Claim 1 wherein the transmitting and receiving circuits (211, 212) each comprise a plurality of resonators (311, ..., 317; 320, ..., 325), wherein at least one resonator (314) of the transmitting circuit and at least one resonator (323) of the receiving circuit are disposed on the single monocrystalline substrate (213). High-frequency multiplexer after Claim 1 or 2 wherein the transmitting circuit (211) comprises a resonator (314) connected to the first terminal (221), and wherein the receiving circuit (212) comprises a resonator (323) connected to the first terminal (225), wherein the resonators of the transmitting and receiving circuits, which are connected to the first terminal, are arranged on the same single monocrystalline substrate (213). High-frequency multiplexer after one of Claims 1 to 3 wherein the transmitting circuit (211) comprises an array path comprising at least one resonator (314), and wherein the receiving circuit comprises an array path having at least one resonator (323), the at least one resonator included in the array paths and the receiving circuit are disposed on the same single monocrystalline substrate (213). High-frequency multiplexer after Claim 4 wherein the transmit circuit (211) comprises at least one parallel path (315, 316, 317) connected to the row path, and wherein the at least one parallel path comprises a resonator, the resonator of the at least one parallel path of the transmit circuit on the single monocrystalline substrate (213) is arranged. High-frequency multiplexer after one of Claims 2 to 5 wherein the transmitting circuit (211) additional resonators (311, 312, 313), wherein the additional resonators are disposed on another monocrystalline substrate (214) which is separate from the single monocrystalline substrate (213). High-frequency multiplexer after Claim 6 wherein the additional resonators (311, 312, 313) of the transmitting circuit (211) disposed on the other monocrystalline substrate (214) are configured to have a temperature coefficient lower than the temperature coefficient of the resonators located on the single monocrystalline substrate (213) are arranged. High-frequency multiplexer after one of Claims 2 to 7 wherein the filter circuit of the transmit circuit (211) has a passband (412), and wherein the at least one resonator (314) of the transmit circuitry disposed on the single monocrystalline substrate (213) is configured such that the filter circuit of the transmit circuit has a large passband Having reflection in a counter-band (420) outside the passband (412). High-frequency multiplexer after Claim 4 further comprising a further transmission circuit (533) and a fourth connection (523) which is connected to the further transmission circuit, wherein the transmission circuit (534) and the further transmission circuit (533) each comprise an array path which has at least one resonator, wherein the respective at least one resonator is connected to another of the second and fourth terminals (524, 523), and wherein the respective at least one resonator is arranged on another single monocrystalline substrate (551). High-frequency multiplexer after one of Claims 2 to 9 wherein the resonators comprise a layer stack disposed on the single monocrystalline substrate (214), wherein the thicknesses of the layers within the different resonators (311, 312, 313) arranged on the single monocrystalline substrate are equal. High-frequency multiplexer after one of Claims 2 to 9 wherein the resonators are surface acoustic wave resonators comprising an electrode (620) comprising layers of different metals (621, 622) disposed on a monocrystalline piezoelectric substrate (214) and a dielectric layer (623) incorporating the Covered metal layers, wherein the thicknesses of the metal layers and the thicknesses of the dielectric layer of the resonators, which are arranged on the single monocrystalline substrate, are the same in the different resonators. High-frequency multiplexer after Claim 10 or 11 wherein the dielectric layer is a layer of silicon dioxide (623). High-frequency multiplexer after Claim 6 wherein the resonators are surface acoustic wave resonators comprising a metal electrode (620) covered by a dielectric layer (623), wherein the thicknesses of the dielectric layer of the resonators disposed on the single monocrystalline substrate (214) and the dielectric layer of the resonators arranged on the other single monocrystalline substrate are substantially different. High-frequency multiplexer after one of Claims 2 to 10 wherein the resonators are bulk acoustic wave resonators comprising a piezoelectric layer packed between electrodes disposed on a monocrystalline substrate, the thicknesses of the layers of the bulk acoustic wave resonators disposed on the monocrystalline substrate being equal in the different resonators are. High-frequency multiplexer after one of Claims 1 to 14 wherein the dielectric layer is a layer of silicon dioxide (623) and wherein the monocrystalline substrate is a monocrystalline piezoelectric substrate (214) or a monocrystalline silicon substrate.

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