DE102016120416A1 - Electron beam source, electron gun and processing arrangement - Google Patents

Abstract

According to various embodiments, an electron beam source (100a, 100b, 500a) may include: a cathode (102s) and an anode (104, 604) defining a beam axis (111) for generating an electron beam along the beam axis (111); the cathode (102s) comprising: a cavity extending along or along the beam axis (111) into the cathode (102s); an emitting surface (102f) for emitting electrons into the cavity, the emitting surface (102f) defining the cavity transverse to the beam axis; and an electron displacer (102v) extending into and / or through the cavity (613) along the beam axis (111).

Description

The invention relates to an electron beam source, an electron gun, and a processing arrangement.

In general, substrates (workpieces) can be processed (treated), e.g. processed, heated and / or structurally altered, e.g. by electron beams. For this purpose, the electron beam can be directed to the respective substrate, which absorbs it. In this way, thermal energy can be transferred to the substrate so that the substrate heats up.

Alternatively, electron beams can be used to coat substrates. In this case, by means of an electron beam thermal energy is transferred to a material to be evaporated (the so-called evaporation) and this converted in this way in the vapor phase (gas phase). The formed material vapor can then be deposited on the substrate so that it forms a layer.

To generate an electron beam, electron beam sources can generally be used. The electrons required for generating an electron beam are provided by means of a cathode, and accelerated by means of an electric field, which bundles their trajectories into an electron beam.

For heating it is necessary to transfer sufficient energy to the irradiated material. For this purpose, an electron beam with a sufficiently large power can be provided, for example with an electron beam current of several amperes (A) at an acceleration voltage of several tens of kilovolts (kV), whereby the electron beam source can absorb a power of up to several hundreds of kilowatts (kW).

So-called transversal guns generate an electron beam and direct it onto a curved nearly circular path of about 270 ° of curvature angle into a crucible where vaporizing material is heated and vaporized. In Transverse guns, the gun system, magnetic beam deflector, and crucible are housed in one assembly. With them, a vacuum-technical decoupling between beam generation and thermal process is not possible. Conventionally, transversal guns are limited to a maximum electron beam power of up to 10 kW.

Alternatively, so-called axial cannons are used, which are constructed according to the multi-chamber principle. In this case, the electron beam is generated in a separate beam generating chamber, and thus decoupled from the thermal process. For this purpose, conventionally massive disc-shaped cathodes are used, which are indirectly heated from the rear side. For indirect heating, a heating coil arranged behind the cathode is heated by means of an electric current, so that this heating coil emits electrons which are directed onto the cathode and heat it up. Such arrangements require a separate power supply to the heating coil and a surge current supply for the directed electron bombardment of the cathode with the electrons from the heating coil. They are therefore expensive to purchase and manufacture. Furthermore, the indirect heating requires additional space, which increases the arrangements. Clearly, when generating a high beam quality with indirectly heated solid cathodes, only the upper part of the achievable power range can be covered, which is why some applications can not be realized with either transversal cannons or axial cannons with optimum beam quality.

Alternatively, cathodes may be formed as a wire (cathode wire) that is wound into a spiral or helix (spiral cathode). Thereby, an enlarged outer surface of the electron can be provided, which can emit more electrons for beam formation. Spiral cathodes can be heated directly by means of an electric current, so that they require less space. However, only the lower part of the required power range can be covered with spiral cathodes, which is why some applications for spiral cathodes are inaccessible.

Similarly, directly heated wire cathodes are used, for example, simple hairpin cathodes, or more complicated shaped cathodes whose shape has the goal to increase the electron exit area, but often increases the production cost. These cathodes, unlike more massive cathodes, have a shorter lifetime in terms of product performance and uptime, limiting their economy in the upper part of the performance range.

In general, the life of conventional cathodes, heated directly or indirectly, is limited due to irradiation of the cathode with ions which are formed in the electron beam plasma and accelerated in the cathode's electric field in their direction. Illustratively, an ion beam directed towards the cathode is formed, which atomises the cathode bit by bit. In particular, this affects the electron exit surfaces, which are roughened and ablated (until the cathode fails), thereby changing their shape and spatial emission characteristics.

According to various embodiments, a beam generating system (electron beam source) is illustratively provided, which has a simplified construction, which is space-saving and inexpensive. Illustratively, this has a simplified geometry, which is inexpensive to manufacture. Furthermore, can be used by the geometry of a direct heating of the cathode, which reduces the required space and thus saves costs. For example, a separate power line for a heater can be saved. Optionally, the cathode is also suitable for indirect heating, if needed, so that its flexibility is maintained.

According to various embodiments, an electron beam source having an increased lifetime is illustratively provided. Clearly, the interaction of the cathode with ions formed in the electron beam plasma is reduced. Thus, the sputtering of the cathode can be reduced, which increases its life. According to various embodiments, an ion absorber is optionally provided which captures the ions after they have passed the region of the cathode.

According to various embodiments, an electron beam source is illustratively provided, which enables a precise and time-stable beam characteristic. Clearly, the electron emission surfaces (emission surfaces) of the cathode are arranged such that they are at least partially protected against irradiation by ions. Thus, the removal of the emission surfaces by atomization can be significantly reduced and the life can be increased.

According to various embodiments, there is provided an electron beam source capable of covering both the upper power range and the lower power range. For example, the electron beam source may be operated in a power range between about 5 kW and about 50 kW. Thus, the performance gap between the transverse guns and the high-performance axial cannons can be closed, which can clearly serve more applications.

According to various embodiments, it has been recognized that the course of the electron trajectories at the point of origin (for example, in a cavity of a hollow cathode) influences the characteristics of the electron beam, in particular the intensity of its divergence. Illustratively, according to various embodiments, an electron beam source is provided which enables a well-focused electron beam. For example, the electron beam source may include a directly heated tubular radiation generating system (e.g., the cathode).

According to various embodiments, an electron beam source may include: a cathode and an anode defining a beam axis for generating an electron beam along the beam axis; the cathode may comprise: a cavity which extends into (or penetrates) the cathode along or through the beam axis; an emission surface (e.g., primary emission surface, e.g., glow emission surface) for emitting electrons into the cavity, the emission surface defining the cavity transverse to the beam axis; and an electron displacer extending into and / or through the cavity along the beam axis. For example, the electron displacer may extend only in part, completely into, or through the cavity.

According to various embodiments, the electron beam source may further comprise: a bearing device by means of which the electron displacer is supported, wherein the bearing device provides the electron displacer with a degree of translation (e.g., along the beam axis) according to which the electron displacer is displaceable.

According to various embodiments, a distance according to which the electron displacer is displaceable may be greater than the extent of the cavity along the beam axis.

According to various embodiments, the electron beam source may further comprise: an adjusting device, by means of which a position of the electron displacer relative to the emission surface is adjustable.

According to various embodiments, the electron displacer may comprise a rod, a needle, a mandrel, and / or a tube, which are elongated along the beam axis.

According to various embodiments, the emission surface may at least partially (i.e., partially or completely) surround the electron displacer and / or the cavity.

According to various embodiments, the electron beam source may further comprise: an electrical shield surrounding the cathode for electrically confining the emission surface.

According to various embodiments, the electron beam source may further include: a coupling structure electrically connecting the electron displacer and the emitting surface coupled to each other (eg, electrically conductive coupled to each other, for example, such that the electron displacer and the emission surface substantially the same electrical potential is provided).

According to various embodiments, the coupling structure may further thermally decouple the electron displacer and the emitting surface from each other and / or provide the electron displacer with a lower operating temperature and / or greater heat dissipation power (eg, extracted heat energy per time) than the emitting surface. It can thus be achieved that the electron displacer is colder than the emission surface, e.g. the electron displacer has a temperature which is below the emission temperature (i.e., the temperature needed to overcome the work function). Clearly, the coupling structure can extract more heat output from the electron displacer than the emission surface.

According to various embodiments, the electron displacer may have a larger work function than the emission surface.

According to various embodiments, the electron displacer and the emission surface may be thermally decoupled from each other by means of the coupling structure such that the low temperature due to the heat balance (difference between supplied and withdrawn heat energy) at the adjusting temperature (operating temperature) causes a low electron emission of the electron displacer (eg negligible) Emission current density), eg less than the electron emission of the emission surface.

According to various embodiments, the electron beam source may further comprise: a beam focusing electrode disposed between the emitting surface and the anode and penetrated along the beam axis by a through hole.

According to various embodiments, the electron displacer may further comprise: a sacrificial structure for absorbing ions formed in the electron beam which is at least partially exposed toward the anode.

According to various embodiments, the electron displacer may include the sacrificial structure or a via opening along the beam axis exposing the sacrificial structure.

According to various embodiments, the electron beam source may further include: a heater configured to supply thermal energy to the emission surface for heating the emission surface. The heater may deliver more thermal energy per unit area (the emission area) to the emission area than the emission area to the electron displacer (i.e., relative to its surface), e.g. For example, the heat flux density to the emission surface may be greater than the heat flux density to the electron displacer.

According to various embodiments, the emission surface may have an extension along the beam axis; wherein the electron displacer extends or is displaceable along the beam axis a distance into the cavity which is greater than approximately one-half of the extent, e.g. greater than about 75% of the extent, e.g. bigger than the extension.

According to various embodiments, the electron displacer may extend along the beam axis through the cavity, e.g. protruding from this.

According to various embodiments, an electron gun may include: the or an electron beam source according to various embodiments, a vacuum chamber in which the electron beam source is disposed and which is penetrated along the beam axis by an aperture so that the electron beam can exit the vacuum chamber through the aperture ; and a deflection assembly for deflecting the electron beam exiting the vacuum chamber according to one or more deflection parameters.

According to various embodiments, a processing arrangement may include: a processing chamber having a processing area; and the or an electron beam source according to various embodiments for irradiating the processing region by means of an electron beam.

According to various embodiments, an electron beam source may include: a cavity cathode and an anode for generating an electron beam; an electron displacer, which is disposed within the cavity cathode and / or slidably mounted therein.

According to various embodiments, a method (eg, for guiding electrons, eg, to form an electron beam along a beam axis) may include: emitting electrons into a cavity from a direction that is transverse to the beam axis; and displacing the electrons from an interior region of the cavity through which the beam axis passes.

According to various embodiments, a method (e.g., for guiding electrons, e.g., to form an electron beam along a beam axis) may include: emitting electrons from a first direction into a cavity; Accelerating the electrons out of the cavity in a second direction which is at an angle (e.g., transverse) to the first direction to have curved trajectories; and displacing the trajectories from an interior area (e.g., a core area) of the cavity.

The core region may be illustratively located in the center of the cavity, i. from its outer boundary (e.g., the emission surface) have a substantially radially equidistant spacing (e.g., concentric). Alternatively or additionally, the core region may be cylindrical or congruent with the shape of the cavity.

According to various embodiments, the beam axis may extend through the core region.

According to various embodiments, the electron beam source may include a controller configured to control and / or regulate the position of the electron displacer relative to the emission surface and / or the potential difference between the emission surface and the electron displacer, e.g. based on a user input or a metric. The measured value may represent, for example, a characteristic of the electron beam, e.g. its performance and / or its convergence.

The smaller a potential difference between the emission surface and the electron displacer during operation of the electron beam source, the smaller the yield of electrons in the electron beam can be and / or the smaller the electron beam divergence can be (this can clearly be more focused).

The further the electron displacer extends into the cavity, the smaller the yield of electrons in the electron beam can be and / or the smaller the divergence of the electron beam can be (it can clearly be bundled more strongly).

The bundling of the electron beam by means of the electron displacer may, according to various embodiments, be superposed on or alternatively be used for the effect of the beam focusing electrode.

According to various embodiments, forming an electron beam may include: guiding electrons along curved trajectories through the cavity from a first direction that is transverse to the beam axis in a second direction that is along the beam axis.

According to various embodiments, the inner region may surround the beam axis and / or be centered in the cavity, e.g. extends along the beam axis.

According to various embodiments, a (e.g., tracked) electron displacer may be used in a cavity cathode.

According to various embodiments, a solid (e.g., tracked) solid (e.g., rod or tube) in a cavity cathode (e.g., its cavity) can be used to at least partially (i.e., partially or completely) shield the beam axis from electrons.

According to various embodiments, an electron beam source may include: a cathode and an anode defining a beam axis for generating an electron beam along the beam axis; the cathode comprising: a cavity penetrating the cathode along the beam axis; an emission surface (e.g., primary emission surface, e.g., glow emission surface) for emitting electrons into the cavity, the emission surface defining the cavity transverse to the beam axis (partially or completely); and an end surface facing the anode; wherein the emission surface is larger than the end face.

According to various embodiments, the end face may adjoin the emission surface and / or the cavity.

According to various embodiments, the emission surface may be arranged between the end face and the cavity.

According to various embodiments, the end face may be arranged between the emission surface and the anode.

According to various embodiments, the emission surface and the cavity may be equally extended in the direction of the beam axis.

According to various embodiments, the emission surface may be disposed between the end surface and a surface of the cathode opposite the end surface, and may extend, for example, from the end surface to the surface opposite the end surface of the cathode.

According to various embodiments, the end face may extend with a first directional component transverse to the beam axis and extend with a second directional component along the beam axis, wherein the first directional component is greater than the second directional component. In other words, the end face may face the anode.

According to various embodiments, the emission surface may extend with a first directional component across the beam axis and with a second directional component along the beam axis, wherein the first directional component is smaller than the second directional component. In other words, the emission surface may face the beam axis.

Clearly, it was recognized that the sputtering of a conventional cathode, in which mainly the anode-facing surface (front surface) emits electrons, can not effectively reduce without having to accept losses in the performance of the cathode. In other words, a conventional cathode requires a certain size of the end face to emit the required amount of electrons. In contrast to the conventional cathode, in which the end face for emitting electrons is therefore clearly chosen to be as large as possible, according to various embodiments, a cathode has the smallest possible end face. As a result, the surface is reduced, to which the ions can impinge, so that clearly as little as possible cathode material is removed. In the region where the ionic current is strongest, the cathode has a cavity through which the ions can pass without interacting with the surface defining the cavity. This surface can be used according to various embodiments as an electron-emitting surface (emission surface), so that the reduced electron emission of the end face is compensated. This provides an emission area (e.g., primary emission area, e.g., glow emission area) with a long lifetime, which can viably provide a large enough electron current to achieve high performance.

According to various embodiments, the cavity may extend from a first anode-facing surface of the cathode (end face) to a second anode-facing surface of the cathode.

According to various embodiments, the emission surface may have two emission surface portions disposed on opposite sides of the cavity and each defining a main emission direction with which these emit electrons into the cavity, wherein the main emission directions of the two emission surfaces at an angle to each other and / or Beam axis have.

The main emission direction may indicate a direction along which the electrons emitted from the emission surface move in the middle (i.e., the center of gravity of the electrons) into the cavity with time. The center of gravity of the electrons (e.g., a plurality of electrons or a spatial distribution of electrons) may be described as an electron weighted average of the positions of the electrons. In the cavity, the electrons can then be deflected by an electrical potential between the cathode and anode and guided in the direction of the anode.

According to various embodiments, the main emission direction may be substantially perpendicular (eg with a tolerance of less than ± 5 °, eg with a tolerance of less than ± 2 °, eg with a tolerance of less than ± 1 °) to a surface portion of the emission surface (Emission area section) run. If the surface section is curved, the main emission direction can essentially be the surface normal averaged over the curved surface section (eg with a tolerance of less than ± 5 °, eg with a tolerance of less than ± 2 °, eg with a tolerance of less than ± 1 °).

According to various embodiments, the angle (main emission angle) of each of the two main emission directions to the beam axis may be less than or equal to about 90 °, e.g. less than or equal to about 85 °, e.g. less than or equal to about 80 °, e.g. less than or equal to about 75 °, e.g. less than or equal to about 70 °, e.g. less than or equal to about 65 °, e.g. less than or equal to about 60 °, e.g. less than or equal to about 55 °, e.g. less than or equal to about 50 ° and / or e.g. greater than or equal to about 20 °, e.g. greater than or equal to about 30 °, e.g. greater than or equal to about 40 °, e.g. in a range of about to about 45 ° to about 90 °, e.g. in a range of about to about 60 ° to about 90 °, e.g. in a range of about to about 60 ° to about 80 °.

According to various embodiments, the angle (direction-angle) of the two main emission directions may correspond to the sum of the two main emission angles, eg less than or equal to approximately 180 °, eg less than or equal to approximately 170 °, eg less than or equal to about 160 °, eg less than or equal to about 150 °, eg less than or equal to about 140 °, eg less than or equal to about 130 °, eg less than or equal to about 120 °, eg less than or equal to about 110 °, eg less than or equal to about 100 ° and / or greater than or equal to about 40 °, eg greater than or equal to about 60 °, eg greater than or equal to about 80 °, eg in a range of about to about 90 ° to about 180 °, eg in a range of about to about 120 ° to about 180 °, eg in one range from about to about 120 ° to about 160 °.

According to various embodiments, a cross-sectional area of the cavity may be increasingly formed transversely to the beam axis in the direction of the anode. Then, the main emission direction may have a directional component directed toward the anode (the major emission angle may then be less than 90 ° and directed away from the anode, for example).

According to various embodiments, a cross-sectional area of the cavity may be formed to be constant or decreasing transversely to the beam axis in the direction of the anode. As the cross-sectional area decreases, the main emission direction may have a directional component directed away from the anode (the major emission angle may then be less than 90 ° and, for example, directed toward the anode). With a constant cross-sectional area, the main emission direction can run transversely to the beam axis.

According to various embodiments, the emission surface may define an emission region in the cavity for supplying the electron beam with electrons from the emission region. The emission surface may be arranged to supply exactly the emission region arranged in the cavity. For example, substantially no electrons can be emitted outside the cavity which contribute to beam formation. Illustratively, the cathode may be configured such that the electrons from which the electron beam is formed originate substantially from the cavity. Thus, a precise electron beam can be generated. When the cathode as a whole tends to emit electrons, one or more shielding elements may be arranged outside the cavity which reduce or substantially eliminate the emission of electrons outside the cavity. For example, the one or more shielding elements can be at a potential which impedes the emission of electrons in the direction of the one or more shielding elements, or pushes already emitted electrons back towards the cathode, so that they are picked up again by the cathode.

According to various embodiments, the emission surface may at least partially surround the cavity. For example, the emission surface may be a contiguous surface surrounding the cavity. Alternatively, the cathode may be penetrated by an aperture structure which interrupts and / or segments the emitting surface. Each segment may for example have at least one surface section of the emission surface or be formed therefrom. If the emission surface is contiguous (not segmented), at least two surface sections of the emission surface can adjoin one another.

According to various embodiments, the electron beam source may further comprise an electrical shield (first shield member) surrounding the cathode assembly for electrically limiting the emission surface. Illustratively, the electrical shielding can be configured such that the active area of the cathode, which emits electrons (emission area), adjoins the cavity. Thus, it can be achieved that electrons are emitted substantially only in the cavity.

According to various embodiments, the electron beam source may further comprise a beam focusing electrode disposed between the emitting surface and the anode and penetrated along the beam axis by a through hole.

The beam focusing electrode may cause a narrowing (necking) of the electrical potential (potential constriction) between the cathode and the anode during operation of the electron beam source. It can thus be achieved that accelerated electrons are bundled into a beam from the cavity in the direction of the anode. By way of example, the electron beam source may have a control which provides the beam-focusing electrode with an electrical potential such that electrons accelerated out of the cavity in the direction of the anode are bundled into a beam.

For example, the potential ratios (e.g., potential contraction) allow the beam bundling electrode through-hole (also referred to as a beam-bundling cathode) to have a greater extent (transverse to the beam axis, e.g., diameter) than the cathode cavity.

The beam-splitting electrode may be extended between the end face (the cathode) and the anode.

Optionally, the beam-focusing electrode may also be used to electrically limit the Be set up emission surface, for example, such that the end surface emits substantially no electrons, wherein the beam-bundling electrode can also be referred to as a second shielding.

According to various embodiments, the controller may be configured to provide an electrical potential to the one or more shield members (e.g., the beam-bundling electrode and / or the shield) such that the emission surface is substantially confined to the surface portions of the cathode adjacent the cavity.

The controller may provide an electrical shielding potential to the one or more shielding elements that suppresses emission of electrons toward the one or more shielding elements. The controller may be configured to provide an electrical potential difference (electrical shielding voltage) between the one or more shielding elements (i.e., the electrical shield potential) and the cathode (i.e., the cathode electric potential) in a range of about 1 V to about 50 V, e.g. in a range from about 2V to about 20V, e.g. in a range of about 5V to about 10V.

According to various embodiments, the electron beam source may further comprise a sacrificial structure for absorbing ions formed in the electron beam, e.g. is arranged on a side of the cavity opposite the anode and is at least partially exposed in the direction of the anode. Clearly, the stream of ions (ionic current) can essentially pass the emission surface and be passed through the cavity. There, the ion current can be absorbed by means of the sacrificial structure, so that the ions are removed from the effective range of the cathode.

According to various embodiments, a clearance (i.e., a space free of a solid) may or may not be disposed between the sacrificial structure and the cathode, e.g. has a cross-section transverse to the beam axis from the same to the upper more than the cavity.

According to various embodiments, the electron beam source may further comprise two electrical contact structures defining a current path between the two electrical contact structures through the cathode. For example, each of the two electrical contact structures may have a terminal portion extending away from the cathode and / or having a fastener (e.g., a threaded bore or a male portion). The two contact structures may be electrically conductive and / or physically, e.g. monolithic, connected to the cathode.

According to various embodiments, an electron beam source may include: a cathode assembly and an anode defining a beam axis for generating an electron beam along the beam axis; the cathode assembly comprising: an emission surface (e.g., primary emission surface, e.g., glow emission surface) for emitting electrons into an emission region whose cross-sectional area is transverse to the beam axis bounded by the emission surface; and an exit port exposing at least partially the emission region toward the anode for supplying the electron beam with electrons from the emission region.

According to various embodiments, the exit opening may be equal to or smaller than the cross-sectional area of the emission area. In that case, physical shielding of the emission surface may occur. Clearly, the emission surface may be parallel to the beam axis and / or directed away from the anode in a direction. Thus, ions propagating along the beam axis can hardly or no longer reach the emission surface. For example, the emission surface may be funnel-shaped or a frustoconical surface.

Alternatively or additionally, the outlet opening may be equal to or greater than the cross-sectional area of the emission area. This can clearly be a larger electron flow can be provided. Illustratively, the emission surface may be parallel to the beam axis and / or may be directed slightly toward the anode. For example, the emission surface may be funnel-shaped or frusto-conical (i.e., like the lateral surface of the truncated cone).

According to various embodiments, the emission surface may have a plurality of sections, each of which has a mutually different course relative to the beam axis. For example, the emission surface can also be formed in a double-funnel-shaped or double-frusto-conical shape.

According to various embodiments, the anode may be penetrated along the beam axis by an opening (anode opening). In other words, the anode may have a passage opening (anode opening). Clearly, the anode can then be referred to as a hollow anode. Through the opening, the electron beam can spread.

According to various embodiments, the cross-sectional area of the emission region may be constant or increasing in a direction away from the anode and / or towards the anode.

According to various embodiments, a cross-sectional area of the anode opening may be formed equal to, smaller or larger than the cross-sectional area of the outlet opening.

The outlet opening can be understood as the opening of the cathode arrangement, through which the electrons leave the emission area in the direction of the anode (clearly an electron current). A free space may extend between the exit opening and the anode, into which an electric field (acceleration field) for accelerating the electrons may or may be formed. The exit opening may define a cross-sectional area of the electron current emerging in the direction of the anode.

According to various embodiments, the electrical acceleration field may extend partially into the cavity of the cathode. Thus, it can be achieved that the electrons provided in the cavity are efficiently accelerated toward the anode.

According to various embodiments, the cathode or its emission surface (electron source) can surround the emission region. For example, the emission surface may limit the emission region or its cross-sectional area on at least opposite sides transversely to the beam axis. The emission region can be or may be provided within the cathode.

According to various embodiments, the cathode or its emission surface may have a plurality of emission surface sections (also referred to as surface sections), of which at least two mutually opposite emission surface sections delimiting the emission region on its opposite sides.

According to various embodiments, the cathode assembly may include a cathode (emission structure) that provides the emission surface. The cathode may provide an electron source that provides electrons for the electron beam.

According to various embodiments, the cathode assembly may include a tubular cathode (tube member) that provides the emission surface inside the cathode. Clearly, the emission surface can be provided by means of an inner circumferential surface of the tubular cathode or be. In other words, the cathode assembly may include or be formed from a cathode tube within which the cavity may be or may be provided. Alternatively, the cathode assembly may comprise a single-wound (e.g., along a tubular) cathode coil (coil) within which the cavity may or may be provided. The inside of the single-layered cathode coil (also referred to as spiral cathode) can then provide the emitting surface (i.e., act as an emitting surface). Alternatively, the cathode assembly may include or be formed of a tubular (e.g., annular) round member (annular cathode), which may be e.g. essentially comprises or is formed from a turn of flat material, in the interior of which the cavity can be or can be provided. Alternatively, the cathode assembly, a round element, in the interior of the cavity may be provided or may have, which opens in a funnel shape toward the anode, wherein the diameter of the cathode assembly can increase or decrease linearly or non-linearly in the direction of the anode.

In other words, a cathode assembly having a tubular geometry may or may not be provided.

According to various embodiments, the electron beam source may further include: a shield surrounding the cathode assembly, wherein a gap is extended between the shield and the cathode assembly for thermally decoupling the shield from the cathode assembly.

According to various embodiments, the electron beam source may further include: a coupling structure electrically coupling the shield and the cathode assembly together, the coupling structure configured to provide an electrical potential difference (voltage) between the shield and the cathode assembly during operation of the electron beam source. The shield may provide an electrical shielding potential which suppresses emission of electrons in the direction of the shield. The electrical potential difference (electrical shielding voltage) between the shield (i.e., the electrical shielding potential) and the cathode assembly (i.e., the cathode electric potential) may range from about 1 V to about 50 V, e.g. in a range from about 2V to about 20V, e.g. in a range of about 5V to about 10V.

According to various embodiments, an electrical reference potential may be provided at the anode (eg ground potential, ie electrical ground), eg optionally by means of the controller. According to various embodiments, an electric cathode potential (high-voltage potential) may be provided at the cathode (or at least its emission surfaces), for example optionally by means of the controller. The electrical cathode potential may be negative with respect to the electrical reference potential. The difference of the electric cathode potential and the electrical reference potential may define the electric acceleration voltage (of the electric acceleration field). The electrical potential difference between the shield and the anode may be greater than the electrical potential difference between the cathode (or at least their emission surfaces) and the anode. In other words, the electrical shielding voltage may be negative relative to the electrical reference potential.

The coupling structure and / or the controller may be configured such that an electrical resistance is provided between the cathode and the shield, for example, an electrical resistance greater than about 10 ohms, e.g. greater than about 100 ohms, e.g. greater than about 1000 ohms (1K ohms), e.g. greater than about 10 kohms, e.g. greater than about 100 kohms.

According to various embodiments, the coupling structure may further be configured to hold the cathode and / or the beam-focusing electrode in a defined position relative to the shield. Illustratively, the coupling structure can have or be formed from a holding structure which holds the cathode and / or the beam-bundling electrode.

According to various embodiments, the cathode assembly may further comprise: a beam-bundling electrode disposed between the cathode (or its emission surface) and the anode and forming the exit opening. The beam focusing electrode may be thermally decoupled from the cathode (or its emission surface), e.g. by means of a holding structure. For example, the support structure may be secured and / or supported on the shield and / or on the cathode. The support structure may further electrically couple the beam-combining electrode to the shield and / or the cathode (or its emission surface), the support structure being configured to provide an electrical potential difference (voltage) between the beam-bundling electrode and the emission surface during operation of the electron-beam source, e.g. such that the beam-focusing electrode and the shield are or will be provided with a substantially equal electrical potential.

According to various embodiments, an electron beam source may further comprise: a sacrificial structure (e.g., in the form of a sacrificial target block) disposed on an opposite side of the emission region from the anode and exposed at least partially toward the anode. The sacrificial structure can act as a collector (absorber) for the (otherwise atomizing) ion current. In this way, a sputtering of the cathode material (material of the cathode assembly) can be reduced or avoided.

The cathode may have an opening (rear opening) on an opposite side of the anode, e.g. when the cathode is tubular. The sacrificial structure can completely or partially cover the rear opening.

The sacrificial structure (ion absorber) may comprise or be formed of an electrically conductive material (e.g., ion absorbing material, illustratively a scavenger material), e.g. Carbon (e.g., in the form of graphite), molybdenum and / or tungsten.

The sacrificial structure may or may not be electrically decoupled from the cathode. Alternatively, the sacrificial structure may be fixed such that an electrical potential difference between the sacrificial structure and the cathode (or its emission area) is provided during operation of the electron beam source (e.g., by the controller), e.g. such that a substantially equal electrical potential is or is provided to the sacrificial structure and the shield and / or such that a potential of the sacrificial structure with respect to the cathode potential is negative.

According to various embodiments, an electron beam source may further include: a heater configured to supply thermal energy to the cathode (or its emission surface) to heat the cathode (or its emission surface). By heating, the emission surface can emit electrons, so-called thermal electrons. The more electrons the emission surface emits, the greater the electron beam current and hence the power of the electron beam which is formed from the electrons (for example by means of a beam guiding arrangement) and e.g. is led to the processing location.

According to various embodiments, the heating device may include or be formed from an indirect heating device, eg a radiation heating device. The indirect heating device may be configured to connect the cathode (or its Emission surface) by means of radiation thermal energy, for example by means of heat radiation and / or particle radiation, such as electron radiation. For this purpose, the indirect heating device can have a radiation source for generating radiation.

Optionally, the indirect heating device may comprise an energy source which supplies electrical energy to the radiation source. Clearly, the radiation source can be set up to convert electrical energy into radiation energy and at least partially supply it to the cathode or its emission surface. In an indirect heating device, the energy supply to the cathode or its emission surface, for example, by means of the energy of the accelerated to the cathode electrons, i. by means of the voltage with which the electrons directed onto the cathode are accelerated. To this end, the voltage (heating voltage) between the radiation source (e.g., a thermally heated filament) and the cathode assembly of about 1000V may be applied.

Alternatively or additionally, according to various embodiments, the heating device may include or be formed from a direct heating device. The direct heating device may include an electrothermal transducer (e.g., a resistive heating element) configured to convert electrical energy into thermal energy. For example, the electrothermal transducer may comprise or be formed from a heating coil. Optionally, the direct heater may include an energy source that supplies electrical energy to the electrothermal transducer. The electrothermal transducer can be thermally conductively coupled to the cathode or its emission surface. Alternatively or additionally, the electrothermal transducer may be monolithically connected to the emission surface. Illustratively, the electrothermal transducer may then be at least partially part of the cathode, e.g. when the cathode for heating by an electric current (heating current) is flowed through. Illustratively, the cathode then provides the electrothermal transducer, e.g. by flowing through it by a heating current.

According to various embodiments, the cathode assembly or its cathode may have an opening structure (eg, gaps or slits) extending from the emission surface (eg, transverse to the beam axis) through the cathode assembly and defining a current path that is at least partially around the emission region runs, for heating the cathode assembly by means of an electric current. Clearly, the cathode can be penetrated by one or more slots. Illustratively, the cathode arrangement can have a cathode that flows directly through the current.

The electron beam source may comprise a beam shaping arrangement for guiding the electron beam (also referred to as beamformer), which converges the electrons generated (from the emission surface) into a beam, i. formed the electron beam. For example, the beamforming arrangement may generate an electric field (acceleration field) which accelerates the electrons and concentrates them into a beam (i.e., collimates, for example).

The beam-shaping arrangement may comprise at least the anode and / or the beam-focusing electrode. Between the anode and the cathode assembly, the electric field (acceleration field) may or may not be provided for accelerating the electrons. The beam-focusing electrode may deform the acceleration field, e.g. constrict, which clearly a lens effect is achieved, which collimates the electrons (bundles).

According to various embodiments, an electron beam source (e.g., when operated in a high power mode) may provide an electron beam greater than 5 kW, e.g. with more than about 10 kW, e.g. with more than about 20 kW, e.g. with more than about 50 kW, e.g. with more than about 100 kW, e.g. with more than about 200 kW, e.g. with more than about 300 kW, e.g. with more than about 400 kW, e.g. with more than about 500 kW, e.g. with more than about 600 kW, e.g. with more than about 700 kW, e.g. with more than about 800 kW, e.g. in a range (power range) of about 5 kW to about 1000 kW, e.g. in a range of about 100 kW to about 50 kW or in a range of about 5 kW to about 50 kW or in a range of about 10 kW to about 800 kW.

For this purpose, the electron beam source can have a power supply which is electrically coupled to the cathode arrangement. The power supply may provide electrical power to the cathode assembly, e.g. an electric current. For example, the power supply may be configured to provide a multiple ampere (A) electrical current and supply it to the cathode assembly (e.g., to drive it through the cathode assembly), e.g. an electrical current greater than about 0.1 A, e.g. with more than about 0.5 A, e.g. with more than about 1 A, e.g. with more than about 2 A, e.g. with more than about 5 A, e.g. with more than about 10 A, e.g. with more than about 20 A, e.g. in a range of about 10 A to about 25 A.

Alternatively or additionally, the power supply can be set up, an electrical voltage (acceleration voltage) with several thousand V (volts), ie in the kV range, for example between the cathode arrangement (or at least its emission surface) and the anode, for accelerating the electrons, eg an electrical voltage of more than about 5 kV, eg more than about 10 kV, eg with more than about 20 kV, eg with more than about 30 kV, eg with more than about 40 kV, for example with more than about 50 kV, eg in a range from about 25 kV to about 60 kV.

The electrical current and / or voltage provided by the power supply (e.g., the current driven through the cathode system) may define electrical power that supplies the power to the electron beam source or that receives the electron beam source. For example, the power supply may be configured to provide and supply electrical power in the kW (kilowatt) range to the electron beam source, e.g. an electrical power greater than about 5 kW, e.g. with more than about 10 kW, e.g. with more than about 20 kW, e.g. with more than about 50 kW, e.g. with more than about 100 kW, e.g. greater than about 200 kW, e.g. greater than about 300 kW, e.g. greater than about 400 kW, e.g. greater than about 500 kW, e.g. greater than about 600 kW, e.g. greater than about 700 kW, e.g. greater than about 800 kW, e.g. in a range from about 5 kW to about 1000 kW, e.g. in a range of about 100 kW to about 500 kW, or in a range of about 5 kW to about 50 kW, or in a range of about 30 kW to about 800 kW.

In other words, the electron beam source can convert the electrical power provided by the power supply (or at least a portion thereof) into an electron beam, which then has a corresponding electrical power. The power of the electron beam may be defined by the electrical charge that the electron beam carries over a given distance in a given time. In other words, the power of the electron beam may be defined by the amount of electrons and their velocity, which form the electron beam. The amount of electrons that the electron beam transports per time can define an electric current of the electron beam (electron beam current). The electron beam current may be greater than about 0.1 A, e.g. more than about 0.5 A, e.g. more than about 1 A, e.g. more than about 2 A, e.g. more than about 5 A, e.g. more than about 10 A, e.g. more than about 20 A, e.g. in a range of about 10 A to about 25 A.

For example, at a power of about 5 kW and a voltage of 50 kV, an electron beam current of 0.1 A.

The cathode, e.g. their emission surface, and / or the shield may comprise or be formed from a high temperature resistant material, e.g. at an aggregate state transition temperature (e.g., melt temperature or sublimation temperature) greater than about 2000 ° C, e.g. more than about 3000 ° C. A high temperature resistant material may include or be formed from a metal such as iron (Fe), titanium (Ti), platinum (Pt), chromium (Cr), hafnium (Hf), niobium (Nb), molybdenum (Mo), tantalum ( Ta) or tungsten (W).

For example, the material selection for the emission surface can be based on its electron emission (in A / cm ² ), so that clearly a sufficiently high electron emission as a function of temperature can be or can be provided.

For example, the high temperature resistant material may include or be formed from a metal compound (e.g., an intermetallic compound or an alloy), e.g. a compound of at least two metals, e.g. a titanium alloy, or e.g. a compound of at least one metal and at least one non-metallic element, e.g. a carbide (e.g., hafnium carbide, tantalum carbide, tantalum hafnium carbide and / or tungsten carbide), a nitride (e.g., titanium nitride), a boride (e.g., lanthanum hexaboride or cerium hexaboride), or an iron alloy (e.g., steel, e.g., molybdenum steel or vanadium steel).

According to various embodiments, the electron beam source may comprise a lanthanum hexaboride cathode or cerium hexaboride cathode.

For example, the shield may comprise or be formed from the same material as the cathode, e.g. their emission surface, or even a different material.

The coupling structure may include or be formed of carbon, e.g. in the form of graphite, carbon fiber and / or carbon fiber reinforced carbon (also referred to as CFC).

According to various embodiments, an electron gun (electron beam gun) may include: an electron beam source, according to various embodiments as described herein, a vacuum chamber (beam generating chamber) in which the electron beam source is disposed and which is penetrated along the beam axis by an opening, so that Electron beam from the Vacuum chamber can escape through the opening; and a deflection assembly for deflecting the electron beam exiting the vacuum chamber according to one or more deflection parameters.

According to various embodiments, the electron gun may comprise a beam focusing arrangement which may comprise one or more electron lenses, also referred to as beam focusing lenses. For example, an electron lens may be configured to generate a magnetic field (and may include one or more electrical coils) and / or may be configured to generate an electric field (and having one or more electrodes therefor).

The electron beam source, together with the deflection arrangement and optionally the beam focusing arrangement, may be part of an electron beam gun, which makes it possible to emit an electron beam in a defined spatial area (e.g., with a defined emission angle). Clearly, the deflection arrangement can control and / or regulate the direction or the course with which the electron beam gun emits the electron beam.

The vacuum chamber in which the electron beam source is disposed may also be referred to as a beam generating chamber. According to various embodiments, the electron gun may have further vacuum chambers (which together form a chamber system). The vacuum chamber (s) disposed between the jet generating chamber and the processing chamber may also be referred to as intermediate chambers. In other words, the electron beam can be passed through the intermediate chambers.

According to various embodiments, a processing arrangement may include: a processing chamber having a processing area; and an electron beam source according to various embodiments as described herein for generating an electron beam directed at the processing region.

According to various embodiments, an electron beam source may include: a cavity cathode and an anode for generating an electron beam; wherein the cavity cathode has a cavity-oriented cavity opening in the direction of the anode.

According to various embodiments, an electron beam source may include: a cathode (e.g., a cavity cathode) surrounding the beam axis concentrically in an upstream space region of an anode and the anode for generating an electron beam. The anode may be penetrated along the beam axis by a passage opening (may also be referred to as an anode bore).

A cavity cathode may have a cavity which is open at least to one side (e.g., anode direction). In other words, the cavity cathode may have an opening (cavity opening) which exposes the cavity. Optionally, the cavity may be opened in addition to another side (e.g., away from the anode). In other words, the cavity cathode may have two cavity openings, e.g. opposite each other. One of the cavity openings may be used as an exit opening, e.g. when the cathode assembly has no beam focusing electrode or when the beam focusing electrode is shaped differently.

A cavity cathode may be tubular or annular, for example. Optionally, the cavity cathode may have one or more turns (a loop of electrical conductor) surrounding and / or delimiting the cavity. The cavity cathode may, for example, comprise or be formed from a coil whose core forms the cavity.

According to various embodiments, a cavity cathode may be used having a cavity opening for generating an electron beam in a direction of the cavity opening.

According to various embodiments, an electron beam source may include: a cathode assembly and an anode defining a beam axis for generating an electron beam along the beam axis; the cathode arrangement comprising: an outlet opening whose cross-sectional area transversely to the beam axis on a side of the outlet opening facing away from the anode defines a cavity whose cross-sectional area is equal to, smaller or larger than the cross-sectional area of the outlet opening transverse to the beam axis; a cathode for providing free electrons in the cavity; wherein the cavity extends along the beam axis from the exit opening past the cathode or into the cathode. A surface of the cathode towards the cavity may provide an emitting surface (e.g., primary emission surface, e.g., glow emission surface). In other words, the cavity may extend along the beam axis from the exit opening past the emission surface.

According to various embodiments, the exit opening of the cathode assembly may be projected onto a plane which is transverse to the Beam axis runs, be free of an emission surface. In other words, the emission surface projected onto the plane can be arranged on or outside the exit opening. Clearly, the emission surface of the cathode assembly can be at least partially shielded from the outlet opening. For example, the emission surface of the cathode arrangement can be at least partially shielded by its beam focusing electrode.

According to various embodiments, an electron beam source may include: a cathode assembly for emitting electrons into an emission region; and an anode for forming an electron beam from the electrons; wherein the cathode assembly surrounds the emission region and has an opening (exit opening), wherein the opening exposes the emission region in the direction of the anode and is aligned with the passage opening.

According to various embodiments, the emission surface may be at an angle (emission surface angle) to the beam axis (with an opening of the angle away from the anode and / or towards the anode), e.g. in a range of about 0 ° (i.e., parallel to the beam axis) to about 45 °, in a range of about 0 ° to about 20 °, e.g. in a range of about 0 ° to about 10 ° (i.e., substantially parallel to the beam axis), e.g. at an angle less than about 5 °. The angle of the emission surface may change over the region of the emission surface (for example, when the emission surface is curved along the beam axis, i.e., a curved truncated cone, as is well understood). In other words, the emission area (electron emission area) may be substantially parallel, e.g. parallel to the beam axis.

The cathode or its emission surface can surround the cavity. The cathode or its emission surface can extend away from the anode as seen from the edge of the outlet opening.

According to various embodiments, an electron beam source may include: a cathode assembly for emitting electrons into an emission region; and an anode defining a beam axis along which the anode is penetrated by an opening, for forming an electron beam propagating along the beam axis from the electrons; wherein the cathode assembly comprises a cavity in which the emission region is provided, wherein the cavity is open to the anode, so that it is aligned with the opening along the beam axis.

According to various embodiments, the cathode or its emission surface may define the cavity transverse to the beam axis. According to various embodiments, the cavity may have an opening that opens to the anode, wherein a cross-section of the opening of the cavity may be larger, equal or smaller than an opening of the cavity of the anode.

According to various embodiments, the beam axis may define a propagation region of the electrons that is extended about the beam axis. The propagation region of the electrons may be the extension of the electron beam transverse to the beam axis, e.g. define the diameter of the electron beam. For example, the propagation region of the electrons at the anode may be defined (e.g., limited) by their through-hole through which the propagation region of the electrons extends. At the cathode assembly, the propagation region of the electrons may be defined (e.g., limited) from their exit aperture into which the propagation region of the electrons extends.

According to various embodiments, the beam axis may define a propagation region of the ions that is extended about the beam axis. The propagation range of the ions may be smaller than the extent of the electron beam transverse to the beam axis. Clearly, the ions can be formed by an interaction of the electrons of the electron beam with gas particles, so that the formation of ions and their propagation range is limited by the extension of the electron beam transverse to the beam axis. For example, the propagation region of the ions may be extended through the cathode to the sacrificial structure.

According to various embodiments, an electron beam source in an electron beam process arrangement can be used to temper, melt, vaporize and / or sublime a material by means of the electron beam. An electron beam source may, for example, be used in a coating machine, a so-called electron beam evaporator system or a so-called electron beam evaporator, for example to deposit layers on corresponding substrates, e.g. to coat a substrate (comprising, e.g., glass, foil, metal, e.g., a belt-shaped or plate-shaped substrate). Furthermore, an electron beam source for electron beam melting can be used, wherein, for example, a material is melted by means of the electron beam.

According to various embodiments, a cathode may have a dimension transverse to the beam axis in a range of about 10 mm to about 50 mm, eg in a range of about 10 mm to about 30 mm, for example about 19 mm.

According to various embodiments, the cavity may have an extension transverse to the beam axis in a range of about 5 mm to about 40 mm, e.g. in a range of about 5 mm to about 25 mm, e.g. in a range of about 14 mm to about 19 mm. For example, the expansion to the anode may increase by more than 1 mm, e.g. less than 10 mm, e.g. in a range of about 2 mm to about 5 mm.

According to various embodiments, a cathode may have an extent along the beam axis in a range of about 10 mm to about 150 mm, e.g. in a range of about 10 mm to about 100 mm, e.g. in a range of about 10 mm to about 50 mm.

According to various embodiments, the passage opening of the beam-focusing electrode may have an extension transverse to the beam axis which is equal to or greater than the extent of the cavity, e.g. less than 10 mm larger than the extent of the cavity, e.g. less than 5 mm greater than the extent of the cavity, e.g. in a range of about 15 mm to about 25 mm, e.g. in a range of about 19 mm to about 22 mm.

According to various embodiments, the electron displacer may comprise or be formed from a solid, e.g. comprise or be formed from an electrically conductive material, e.g. a metal (such as at least steel or copper), e.g. a non-magnetic metal such as tungsten or molybdenum. Alternatively or additionally, the electron displacer may comprise or be formed from a semimetal, e.g. Carbon in a carbon modification (e.g., graphite) or in a carbide.

According to various embodiments, the electron displacer may have an extension (e.g., diameter) transverse to the beam axis in a range of about 1 mm to about 10 mm, e.g. in a range of about 3 mm to about 5 mm (millimeters). Alternatively or additionally, the electron displacer may have an extension (e.g., diameter) transverse to the beam axis that is less than half of the cavity parallel thereto.

According to various embodiments, the electron displacer may have an extension (e.g., a length) along the beam axis in a range of about 5 mm to about 10 cm, e.g. in a range of about 5 mm to about 5 cm (centimeters). Alternatively or additionally, the electron displacer may have an extension (e.g., diameter) transverse to the beam axis that is less than half of the cavity parallel thereto.

According to various embodiments, the electron displacer may have an opening extent (e.g., length of the through-hole) along the beam axis in a range of about 5 mm to about 10 cm, e.g. in a range of about 5 mm to about 5 cm (centimeters). Alternatively or additionally, the electron displacer may have an opening extent (e.g., inner diameter of the passage opening) transverse to the beam axis which is less than half of the cavity parallel thereto.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1A and 1B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

2A and 2 B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

3A and 3B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

4A and 4B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

5A an electron beam source according to various embodiments in a schematic cross-sectional view;

5B an electron gun according to various embodiments in a schematic cross-sectional view;

6A a processing arrangement according to various embodiments in a schematic cross-sectional view;

6B an electron beam source according to various embodiments in a schematic cross-sectional view;

7A . 7B and 7C each a cathode assembly according to various embodiments in a schematic cross-sectional view;

8A a cathode assembly according to various embodiments in a schematic cross-sectional view;

8B a processing arrangement according to various embodiments in a schematic cross-sectional view;

9 an electron beam source according to various embodiments in a schematic cross-sectional view;

10A an electron beam source according to various embodiments in a schematic cross-sectional view;

10B a cathode according to various embodiments in a schematic unfolding;

11 an electron beam source according to various embodiments in a schematic cross-sectional view;

12A and 12B each a cathode according to various embodiments in a schematic cross-sectional view;

13A and 13B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

14A and 14B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

15A and 15B a respective electron beam source according to various embodiments in a schematic cross-sectional view;

16 a method according to various embodiments in a schematic flowchart; and

17 a method according to various embodiments in a schematic flowchart.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

According to various embodiments, the term "coupled" or "coupling" may be used in the sense of (e.g., mechanical, hydrostatic, thermal and / or electrical), e.g. direct or indirect, connection and / or interaction. For example, multiple elements may be coupled together along an interaction chain. According to various embodiments, "coupled" may be understood in terms of mechanical (e.g., physical) coupling, e.g. by means of a direct physical contact. A clutch may be configured to transmit a mechanical interaction (e.g., force, torque, etc.).

The control can be understood as an intended influencing of a system. The state of the system can be changed according to a specification. Rules can be understood as taxes, with a change of state of the system is additionally counteracted by disturbances. Clearly, the controller may have a forward-looking control path and thus illustratively implement a flow control, which converts an input variable into an output variable. The control path can also be part of a control loop, so that a control is implemented. The control has, in contrast to the pure forward control on a continuous influence of the output variable on the input, which by the control loop is effected (return). In other words, as an alternative or in addition to the control, a regulation can be used or, alternatively or in addition to the control, a regulation can take place.

According to various embodiments, an electrical voltage can be understood as an electrical potential difference (difference between two electrical potentials), e.g. between two elements. A voltage on an element (e.g., a terminal, a structure, a body, or the like) may be understood as the difference in electrical potential across the element to a reference potential (e.g., electrical ground). Information about several voltages can refer to the same reference potential. If the voltage on one element is positive, its electrical potential is greater than the reference potential. If the voltage at one element is negative, its electrical potential is less than the reference potential. The greater the electrical voltage across an element, the greater its potential can be. A voltage difference (eg between two elements) can be understood as the difference between two voltages which, when the two voltages are related to the same reference potential, corresponds to the difference of the corresponding electrical potentials (eg between the two elements) (ie given independent of the reference potential) , A more negative electrical potential can be understood as having a greater negative value, e.g. regarding the reference potential. A more positive electrical potential can be understood as having a positive negative value, e.g. regarding the reference potential.

According to various embodiments, an electron beam source for generating electron beams for thermal processing is provided. The thermal treatment may include a target, e.g. a substrate (workpiece) or evaporate, to heat. The thermal treatment (the thermal process) may be done in a vacuum according to various embodiments.

The electrons emerging from the cathode, or their emission surface, are bundled (formed) by the beam-bundling electrode into a beam and accelerated toward an anode (e.g., a hollow anode). The electrons pass through the anode through their openings (e.g., a bore), e.g. unhindered.

Optionally, the electrons pass through one or more chambers (of a chamber system) arranged for at least one of the following: for further beam focusing, for beam deflection; for pressure decoupling.

The electrons exiting the chamber system enter the processing chamber and reach the point of impact (landing areas) in the processing chamber where the desired thermal process is generated, e.g. the target (irradiation target).

The electron gun may be attached to the processing chamber as a stand-alone assembly, e.g. be flanged to it, and optionally at least partially protrude into this.

The chamber system may include one or more chambers (e.g., vacuum chambers) which are at least partially separately evacuable (i.e., pumpable) (also referred to as differential pumping). For pumping out, the one or more chambers of the chamber system may be coupled to a vacuum pump assembly comprising one or more vacuum pumping systems. A vacuum pump system may e.g. a high vacuum pump and / or a backing pump. Separately pumpable chambers of the chamber system can be pumped by means of separate vacuum pump systems.

By means of the chamber system, a vacuum decoupling (pressure decoupling) between the beam generating area and the impact area (in which the thermal treatment takes place) can be achieved. The beam generating area may be provided in a first chamber (beam generating chamber) of the chamber system. At least one anode and one cathode arrangement may be arranged in the beam generation area.

Alternatively, the electron gun may be operated without differential pumping, e.g. with a chamber system having only one chamber or a plurality of chambers, of which only one, e.g. the jet generating chamber is pumped out. Depending on the prevailing vacuum conditions, the electron gun can be operated with or without intermediate chamber (s) (e.g., pumped off individually or together) in the generation of the thermal process.

According to various embodiments, an electron gun or its electron beam source may or may not be provided for high power processes in a power range of about 10 kW to about 800 kW. In other words, an electron beam may be or may be provided in a power range of about 10 kW to about 800 kW.

According to various embodiments, a directly heated cathode assembly is provided by which, compared to the indirect Heating principle one of the otherwise three high voltage supply lines (eg a surge power supply) is saved.

• a) Eine Emission von Elektronen aus einer der Anode zugewandten Oberfläche. Beispielsweise kann die Emissionsfläche, welche die Elektronen emittiert (d.h. die aktive Emissionsfläche), gegenüber der Anode abgeschirmt und/oder abgedeckt sein.
• b) Ein direkter Zerstäubungsangriff auf die aktive Emissionsfläche.
• c) Eine Emission von Elektronen auf der Außenseite der Kathodenanordnung. Mit anderen Worten kann eine Emission von Elektronen aus einer dem Emissionsbereich abgewandten Oberfläche unterdrückt sein oder werden, z.B. teilweise oder vollständig.

According to various embodiments, the at least one of the following can be reduced or avoided by means of the electron beam source or its (eg directly heated) cathode arrangement:

• a) An emission of electrons from an anode-facing surface. For example, the emission surface emitting the electrons (ie, the active emission surface) may be shielded and / or covered with respect to the anode.
• b) A direct atomization attack on the active emission surface.
• c) An emission of electrons on the outside of the cathode assembly. In other words, an emission of electrons from a surface facing away from the emission region can be or be suppressed, for example partially or completely.

An electrically effective outer shield (shield) may reduce or prevent the emission of electrons (the electron leak) on the outside of the cathode assembly. In other words, the emission of electrons occurs primarily inside the cathode assembly, e.g. of the cathode tube. The electrons follow the potential gradient (provided by the acceleration field) to the anode and are formed into a beam (electron beam) in the opening facing the anode.

The current of ions (ion current), which is directed counter to the movement of electrons in the electron beam, at least partially (ie partially or completely, eg essentially completely) passes through the cathode arrangement or its emission surface without impinging on the cathode or its emission surface and / or to atomise.

Optionally, the cathode assembly and the anode may be movably mounted relative to each other. In other words, the cathode assembly and / or the anode may be movably supported, e.g. together by means of a bearing arrangement and / or separately from each other by means of separate bearing arrangements. This makes it possible to adjust the distance of the cathode assembly and the anode from each other (also referred to as Vario-cathode principle or Vario-anode principle). By means of the distance of the cathode arrangement from the anode, the beam power can be adjusted or adjusted for a given acceleration voltage.

Alternatively or additionally, the beam power can be adjusted or adjusted for a given acceleration voltage by means of the temperature of the cathode or its emission surface, e.g. by adjusting or adjusting the intensity of the heating current (adjusting or setting the Heizstromdurchflusses).

According to various embodiments, a mandrel-shaped or annular element (also referred to more generally as an electron displacer), e.g. on cathode potential, which projects concentrically into the tubular or annular cathode system or protrudes, provided and / or used. The material thickness of the element and the support for supporting the element can prevent the element from reaching temperatures at which it contributes to beam formation by electron emission. According to various embodiments, the mandrel-shaped or ring-shaped element can fulfill the following functions: a) collecting the backward ion current (ie acting as a sacrificial element) and / or b) changing the potential conditions in the beam generation region (also referred to as emission region) with the crossed and / or divergent beam portions are avoided.

The element (the electron displacer) may comprise or be formed from, for example, graphite, molybdenum and / or tungsten.

The element (the electron displacer) can project into the beam-generating region via the anode-facing front edge of the cathode for beam focusing. The position of the leading edge of the element may be changeable for beam optimization purposes. The element may be trackable or may be designed to compensate for the material removal produced by the ionic current.

According to various embodiments, an annular and / or tubular member (annular and / or tubular electron displacer) may have a lower wear (e.g., a solid material electron displacer) compared to a mandrel member (e.g., due to ion erosion due to material removal). A large proportion of the ions can vividly pass through the pipe and can hit the pipe rear side on the optionally arranged there sacrificial element (also referred to as sacrificial structure).

1A illustrates an electron beam source 100a according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The cathode arrangement 102 and the anode 104 can be arranged at a distance from each other. The cathode arrangement 102 can an emission area 102f (Eg primary emission surface, eg Glühemissionsfläche), which for emitting 112 of electrons in an emission area 113 along a main emission direction 112 is set up. The emission area 113 can be descriptive of the emission area 102f adjoin. This can change the cross-sectional area 113q of the emission range 113 from the emission area 102f be limited. The main emission direction 112 can with the beam axis a main emission angle 112w which is equal to or less than about 90 ° and greater than about 45 °, eg greater than about 60 °.

The outlet opening 106 (illustrated by arrows) can the emission range 113 in the direction of the anode 104 uncover. Clearly, the emission range 113 supply the electron beam with electrons.

The cross-sectional area 106q the outlet opening 106 can be larger, smaller or equal to the cross-sectional area 113q of the emission range 113 be. The corresponding cross-sectional area of the inner area 613K of the cavity may be smaller than the cross-sectional area 106q the outlet opening 106 and / or with this.

The cross-sectional area 113q of the emission range 113 can the cross-sectional area 106q the outlet opening 106 eg overlap, eg on opposite sides (transverse to the beam axis) 111 ) over the cross-sectional area 106q the outlet opening 106 stand out. Clearly, the emission range 113 optionally wider (transverse to the beam axis 111 extended) than the outlet 106 ,

The cathode arrangement 102 and the anode 104 may define a propagation region, eg in the form of a channel, along which the electrons move, ie which are along the beam axis 111 extends. The propagation area may be through the exit opening 106 through into the emission area 113 extend into it.

Similarly, the beam axis 111 a return flow area 108 define along which the ions 108 which are formed along the electron beam, to the cathode assembly 102 flow (ie an ionic current 108i form). The return flow area 108 can from the outlet 106 on their cross-sectional area 106q reduced (narrowed) so that the outlet opening 106 or their cross-sectional area 106q the cross-sectional area of the ionic current 108i within the emission range 113 defined (ie on the cross-sectional area 106q the outlet opening 106 limited). The ion current 108i can form, for example, in the electron beam.

The emission area 102f the cathode arrangement 102 can be outside of the return flow area 108 be arranged, which is in the cathode assembly 102 extends into it.

The cross-sectional area 113q of the emission range 113 can be in one direction from the anode 104 away (eg against the direction of the electron beam, ie the beam direction) increase. In other words, the emission area 102f obliquely to the beam axis 111 run.

Clearly, the ion current can essentially pass through the emission surface without interacting with it, since the trajectories of the ions (ionic orbit) can be deflected much less than the trajectories of the electrons (electron orbits) because of their higher mass.

Alternatively, the cross-sectional area 113q of the emission range 113 in one direction from the anode 104 away (eg counter to the direction of the electron beam, ie the beam direction) decrease (see 10A ).

According to various embodiments, the cathode 102s an electron displacer 102v which extends along the beam axis 111 in the cavity 613 at least partially (ie partially or completely) extends into, for example, in its inner region 613K , The electron displacer 102v may be in the form of a spike, which may optionally be hollow inside. The electron displacer 102v For example, it can be displaceably mounted, so that its distance from the anode or its position relative to the emission surface can be adjusted and / or regulated. For example, shifting the electron displacer 102v be done by means of an adjusting device, as will be described in more detail later. The adjusting device can, for example, have a drive and / or an adjusting screw whose actuation causes a displacement of the electron displacer 102v causes.

1B illustrates an electron beam source 100b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The emission area 102f the cathode arrangement 102 can by means of a cathode 102s be or be provided. The cathode 102s may have different geometries, eg tubular, annular, spiral, C-shaped, etc. The geometry of the cathode 102s can the geometry of the emission surface 102f define.

The cathode 102s or the emission area 102f may be one-piece (ie monolithic). Alternatively or additionally, the cathode 102s or the emission area 102f be segmented.

The emission area 102f may have a plurality of emission surface portions, of which at least two emission surface portions 102 . 102b the emission area on opposite sides (eg transversely to the beam axis 111 ) limit. The plurality of emission surface portions may be contiguous (eg, when the emission surface 102f is integral) or in pairs (ie each adjacent emission surface portions) have a distance from each other. The emission surface portions may be, for example, of individual segments of the cathode 102s be or be provided. Optionally, the segments of the cathode 102s be electrically coupled together so that a current path is provided which passes therethrough.

According to various embodiments, the emission area 102f as (eg closed) lateral surface of the inside of the cathode 102s be or be provided.

As in 1B is illustrated, the emission area 102f (or their emission surface portions) may be aligned parallel to the beam axis. Alternatively, the emission area 102f (or their emission surface portions) at an angle 102w (Emission surface angle) to the beam axis (see 1A ).

According to various embodiments, the anode 104 along the beam axis 111 be penetrated by an opening. In other words, the anode can 104 be designed as a hollow anode. The opening 104o the anode 104 (Anode opening 104o ) may have a cross-sectional area 104q which is smaller than the cross-sectional area 113q of the emission range 113 and / or smaller than the cross-sectional area 106q the outlet opening 106 , Alternatively or additionally, the opening 104o the anode 104 (Anode opening 104o ) a cross-sectional area 104q which is larger than the cross-sectional area 113q of the emission range 113 and / or smaller than the cross-sectional area 106q the outlet opening 106 (see 10A ).

The outlet opening 106 and the anode opening 104o can be aligned with each other, eg along the beam axis 111 , Optionally, the outlet opening 106 and the anode opening 104o be arranged concentrically.

The cathode 102s can a cavity 613 which has the cathode 102s along the beam axis 111 penetrates. The one emission area 102f can the cavity 613 transverse to the beam axis 111 limit, eg completely. Furthermore, the cathode 102s an end face 102q which of the anode 104 is facing. The emission area 102f Optionally equal to or greater than the face 102q be formed, for example, the same as or more than twice the size of the end face 102q , eg equal to or more than three times the face area 102q be, for example, the same as or more than four times the face 102q , eg equal to or more than five times the frontal area 102q , eg equal to or more than six times the face 102q , for example, the same as or more than ten times the end face 102q ,

The emission area 102f Optionally, it may cause greater electron emission (eg per area and / or per time) than the face 102q ,

Illustratively, the cross-sectional area 613q of the cavity 613 transverse to the beam axis 111 be formed so large that the emission surface 102f essentially outside the ionic current 108i located (compare 1A ). The corresponding cross-sectional area of the inner area 613K of the cavity may be smaller than the entire cross-sectional area 613q of the cavity, eg a subset thereof.

2A illustrates an electron beam source 200a according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The electron beam source 200a can be a power supply 202 having an electrical energy source 202U and an electrical power line 202l can have. The electrical energy source 202U can by means of the electrical power line 202l (having, for example, high voltage leads) with the cathode assembly 102 and / or the anode 104 be electrically connected. Is the electrical energy source 202U not by means of the electrical power line 202l with the anode 104 connected, can the anode 104 and the electrical energy source 202U also be electrically coupled to each other via electrical ground (ie indirectly). Alternatively, the power supply 202 (or can the electrical energy source 202U and the electrical power line 202l ) the cathode assembly 102 and the anode 104 couple electrically (ie directly).

Between the cathode arrangement 102 and the anode 104 can be used to operate the electron beam source 200a by means of the power supply 202 be provided an electric acceleration voltage. As a result, between the cathode assembly 102 and the anode 104 an electric field (acceleration field) may be formed or which the electrons from the emission region 113 in the direction of the anode 104 accelerated and to a beam (electron beam) with an electron beam current 211 along the beam axis 111 formed.

According to various embodiments, the electron displacer 102v by a distance 111d (eg parallel to beam axis 111 ) in the cavity 613 (or the emission range 113 ) and / or be displaceable out. The distance 111d may be greater than an extent of the cavity 613 (or the emission range 113 ) parallel to the track 111d ,

According to various embodiments, the electron beam source 200a a coupling structure 302k comprising the electron displacer 102v and the emission area 102f electrically conductive coupled with each other. This can be achieved that the electron displacer 102v and the emission area 102f the same electric potential (cathode potential) is provided. For example, the coupling structure 302k an electrical power line 202l or formed from and / or a monolithic metallic compound of the electron displacer 102v with the emission area 102f provide.

Optionally, the electron beam source 200a a controller 208 which may be arranged, the displacement of the electron displacer 102v to control and / or to regulate. Alternatively or additionally, the controller 208 be set up, an electrical potential difference between the electron displacer 102v and the emission area 102f to control and / or to regulate, for example by means of a voltage source and / or an adjustable electrical resistance.

Optionally, the coupling structure 302k the electron displacer 102v provide a greater heat dissipation than the emission surface 102f , Illustratively, the coupling structure 302k opposite the electron displacer 102v develop a greater cooling effect than compared to the emission surface 102f , This can be achieved that the electron displacer 102v its emission temperature at which it begins to emit electrons is not reached. For example, a ratio of the electrical potentials of the electron displacer 102v and the emission area 102f less than a ratio of the temperatures of the electron displacer 102v and the emission area 102f , The temperature of the electron displacer 102v during operation of the electron beam source 200a can result from a balance between this supplied heat output and this extracted heat output. By means of heat radiation from the emission surface 102f can the electron displacer 102v Heat output to be supplied. By means of the coupling structure 302k can the electron displacer 102v Heat output withdrawn (also known as heat loss performance) are.

2 B illustrates an electron beam source 200b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The electron beam source 200b can be a heater 212 having an electrical energy source 212u and an electrical power line 212l can have. The electrical energy source 212u can by means of the electrical power line 212l (including, for example, high voltage supply lines) with an (electrothermal) transducer assembly 212w be electrically connected. The transducer assembly 112w can eg by means of the cathode 102s and / or by means of a radiation source 212s be or be provided. The transducer assembly 112w can be configured to convert electrical energy (electrical heating energy) into thermal energy (electrothermal conversion).

For example, electrical energy may be in the form of an electrical current (heating current) along a current path through the cathode 102s be passed through, so that the heating current dissipatively passes into thermal energy.

Alternatively or additionally, the electric current (heating current) of the radiation source 212s be supplied, which at least partially converts this into radiation, for example electron radiation and / or thermal radiation. The energy of the radiation can hit the cathode 102s dissipatively into thermal energy. The electrons of the electron beam kinetic energy can be supplied, for example by means of the energy source 212u between the radiation source 212s and the cathode 102s an electric field is generated in which the electrons of the electron beam are accelerated.

Between the connections of the heater 212 can be used to operate the electron beam source 200b be provided an electric heating voltage, which results in the electric heating current. For example, the electrical heating voltage to radiation source 212s issue. Alternatively or additionally, the electrical heating voltage at the cathode 102s issue. Between the radiation source 212s and the cathode assembly 102 An optional heating voltage may be or may be applied, eg when electron radiation is used for heating.

3A illustrates an electron beam source 300a according to different Embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The electron beam source 300a can be a shield 302 which have the cathode arrangement 102 or their cathode 102s surrounds. The shield 302 can be an outside 102e (eg an outer surface 102e ) of the cathode assembly 102 or their cathode 102s cover. Thus it can be achieved that the outside 102e hardly or no electrons emitted (electron exit), ie clearly fewer or no electrons emitted from the outer surface and thus not accelerated towards the anode.

The shield 302 can be in the direction of the anode 104 be open, leaving the outlet 106 the cathode arrangement 102 in the direction of the anode 104 is exposed. In other words, the shielding 302 have an opening which the outlet opening 106 the cathode arrangement 102 uncovered (eg completely).

Optionally, the shield can 302 at least partially between the anode 104 and the cathode assembly 102 extend, eg outside the outlet opening 106 ,

The shield 302 can the emission-active surface (emission area 102f ) of the cathode assembly 102 define, eg limit. Illustratively, the emission of electrons by means of the shield 302 on the surfaces of the cathode assembly 102 are suppressed, which are covered by the shield. For example, the remaining surfaces, ie those of the shield 302 exposed (not covered), the emission area 102f have or be formed from it. Clearly, by means of the electrical shielding potential, the energy barrier which the electrons must apply to the cathode arrangement 102 to be exited, be elevated or become, so that as few electrons as possible the cathode arrangement 102 in the direction of the shield 302 leave.

According to various embodiments, the shield 302 have a closed (ie free of passage opening) and / or monolithic structure. Alternatively, the shield 302 have a passage opening or a plurality of through openings, which this example transverse to the beam axis 111 penetrate, and / or be segmented. For example, the shield 302 have a network or be formed from it.

Furthermore, between the shield 302 and the cathode assembly 102 (eg their cathode 102s ) a gap may be formed so that the shield 302 and the cathode assembly 102 (eg their cathode 102s ) are arranged at a distance from each other. For example, the shield 302 and the cathode assembly 102 (eg their cathode 102s ) be free of direct physical contact with each other. This can be achieved that the shield 302 and the cathode assembly 102 (eg their cathode 102s ) are thermally decoupled from each other. Thus, the shield 302 For example, a radiation of heat radiation from the cathode assembly 102 (eg their cathode 102s ), for example, when the cathode assembly 102 (eg their cathode 102s ) is heated.

The shield 302 can optionally by means of a coupling structure 302k with the cathode assembly 102 electrically coupled (eg conductive) and / or mechanically coupled. Alternatively or additionally, the shield 302 by means of the coupling structure 302k with the electron displacer 102v electrically coupled (eg conductive) and / or mechanically coupled.

3B illustrates an electron beam source 300b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The cathode arrangement 102 may be a beam-bundling electrode 304 exhibit. The beam-bundling electrode 304 can along the beam axis 111 be penetrated by an opening (beam bundling opening), which has a cross-sectional area (transverse to the beam axis 111 ) having. The opening of the beam-bundling electrode 304 can the outlet 106 form and the cross-sectional area of the beam bundling opening, the cross-sectional area 106q the outlet opening 106 define.

The electron beam may have an extension (eg diameter) transverse to the beam axis 111 have, which is smaller than the outlet opening 106 ,

The cross-sectional area of the beam-bundling opening may be the same, larger and / or smaller than the cross-sectional area 113q of the emission range 113 be.

The beam bundling opening and the anode opening 104o can be aligned with each other, eg along the beam axis 111 , Optionally, the beam bundling opening and the anode opening 104o be arranged concentrically.

4A illustrates an electron beam source 400a according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The cathode arrangement 102 can have a back opening 116 having a cross-sectional area (transverse to the beam axis 111 ) having. The cross-sectional area of the rear opening 116 may be equal to or greater than the cross-sectional area 106q be the exit opening.

Optionally, the electron displacer 102v an opening 116d have, which along the beam axis 111 penetrates (also as a passage opening 116d designated). The passage opening 116d can be part of the back opening 116 be. For example, the beam axis 111 in the passage opening 116d of the electron displacer 102v be arranged.

The outlet opening 106 , the passage opening 116d and / or the back opening 116 can be aligned with each other, eg along the beam axis 111 , Optionally, the outlet opening 106 , the passage opening 116d and / or the back opening 116 be arranged concentrically.

The backside opening 116 or at least the passage opening 116d can by means of a sacrificial structure 402 be covered or become. In that case, the victim structure 402 for example, outside the cavity 613 be arranged and / or the electron displacer 102v can be between the outlet 106 and the sacrificial structure 402 be arranged.

Alternatively or additionally, the sacrificial structure 402 or at least part of it on one side of the electron displacer 102v be arranged, which is the outlet opening 106 is facing (eg frontally). For example, the electron displacer 102v the sacrificial structure 402 have or be formed from it. In that case, the victim structure 402 be arranged for example in the cavity.

The sacrificial structure 402 can be set up for the absorption of ions, for example under vividly lowest possible atomization. The sacrificial structure can be clear 402 have a possible sputtering resistant material (also referred to as sacrificial material) or be formed therefrom, for example a nitride, a boride and / or a carbide. Alternatively or additionally, the sacrificial structure 402 Having carbon in a carbon modification or be formed therefrom, for example in the form of graphite.

For example, the electron displacer 102v have or be formed from the sacrificial material, eg graphite.

4B illustrates an electron beam source 400b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The beam-bundling electrode 304 may according to various embodiments of the shield 302 be attached. Optionally, the shield 302 and the beam-bundling electrode 304 be electrically conductively coupled to each other, for example, such that they have a common electrical potential. Thus, an additional power line for the Strahlbündelungselektrode 304 or the shielding 302 be saved.

5A illustrates an electron beam source 500a according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The coupling structure 302k showing the cathode arrangement 102 with the shield 302 electrically coupled and / or mechanically coupled, for example, may be annular and / or segmented. The coupling structure 302k can be at one of the anode 104 opposite end portion of the cathode assembly 102 (eg their cathode 102s ) lie, for example, reach into this form fit. For example, the cathode assembly 102 (eg their cathode 102s ) and the coupling structure 302k be in one another.

The sacrificial structure 402 For example, it may comprise or be formed from a disk and / or a pad.

The electron beam source 500a can a radial section 102r which extends from the beam axis 111 extends away, for example, perpendicular to this. The radial section 102r may be at the cathode assembly 102 (eg their cathode 102s ) or be connected to it (eg monolithic). Alternatively, the radial section 102r Part of a holding device for holding the cathode assembly 102 be.

The radial section 102r can have one or more through holes 102 o have (for example, along the beam axis 111 permeate). Through the passage openings 102 o the shield can pass through 302 extends and / or supported, eg without the radial section 102r directly physically contact. This allows the radial section 102r and the shield 302 be thermally and / or electrically decoupled from each other. For example, between the radial section 102r and the shield 302 in the passageways 102 o an annular gap may be formed, which may optionally be at least partially filled with an electrically and / or thermally insulating material. The electrically and / or thermally insulating material can allow the shielding 302 in the passageways 102 o can support and optionally part of the coupling structure 302k be.

Alternatively, the shield 302 be supported by a holding device and the cathode assembly 102 at her the anode 104 facing end portion of the shield 302 be supported, for example in the through holes 102 o , Other variants can be used around the components of the cathode assembly 102 in a defined position relative to each other to keep (to store).

5B illustrates an electron gun 500b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The electron gun 500b can be an electron beam source 502 and a vacuum chamber 504 (also as a beam generating chamber 504 in which the electron beam source 502 is arranged. The beam generating chamber 504 can an opening 504o (Chamber opening 504o ), eg their cross-sectional area (transversely to the beam axis 111 ) substantially the cross-sectional area of the anode opening 104o the electron beam source 502 equal to or greater so that the electron beam is the chamber opening 504o can happen. In other words, the beam generating chamber 504 in its chamber wall along the beam axis 111 from a chamber opening 504o be penetrated.

The chamber opening 504o and the anode opening 104o can be aligned with each other, eg along the beam axis 111 , Optionally, the outlet opening 106 and the anode opening 104o be arranged concentrically.

The electron beam source 502 can be analogous to the electron beam source 100a and / or similar to any other electron beam source described herein, eg, similar to the electron beam source 500a , The electron beam source 502 can be an electron beam 502e in the direction of the chamber opening 504o emit, eg through the chamber opening 504o therethrough.

The electron gun 500b may further include a deflection arrangement 506 which is set up the electron beam 502e to distract according to one or more deflection parameters. This can be the deflection 506 be arranged to generate according to the one or more deflection parameters, an electric and / or magnetic field which with the electron beam 502e interacts.

The deflected electron beam 512e can be at an angle to the beam axis 111 spread. For example, the angle may have a value in a range of about 0 ° to about 45 °. Depending on the requirement, the electron beam 502e also be distracted at a different angle.

Optionally, the electron gun 500b another vacuum chamber 508 (also as a deflection chamber 508 designated), in which the deflection arrangement 506 is arranged. The deflection chamber 508 can to the beam generating chamber 504 adjoin and / or at least partially surround it. The deflection chamber 508 can be a chamber opening 508o which are connected to the deflection arrangement 506 is adjusted so that the angular range in which the deflection assembly 506 the electron beam 502e can distract from the chamber opening 508o the deflection chamber 508 is overstretched.

6A illustrates a processing arrangement 600a according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The processing arrangement 600a can be a processing chamber 612 in which a processing area 611 can be provided. The processing chamber 612 can be configured as a vacuum chamber, ie that a vacuum can be generated therein. Furthermore, the processing arrangement 600a an electron beam source 502 which has an electron beam 502e in the direction of the processing area 611 can emit.

Alternatively or additionally, the processing arrangement 600a an electron gun 500b which, for example, the electron beam source 502 can have. For example, the processing arrangement 600a more than an electron gun 500b and / or electron beam source 502 exhibit.

6B illustrates an electron beam source 600b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

The electron beam source 600b can be a cavity cathode 102s (Hollow cathode 102s ) exhibit. The cavity cathode 102s can be a cavity opening 602r have, ie a cavity 613 which is open at least in one direction. The cavity 613 can be in the direction of the anode 604 to be open.

According to various embodiments, the cavity 613 on one of the anode 104 be closed opposite side (back) (one-sided cavity opening 602r ). Then can the electron beam source 600b a wall element 602w having the back of the cavity cathode 102s closes.

The wall element 602w can be, for example, a sacrificial structure 402 (see 4A ) or formed therefrom, as described above. Alternatively or additionally, the wall element 602w Part of a shield 302 be as described above.

Alternatively, the cavity 613 on one of the anode 104 opposite side (back) be open (second-side cavity opening 602r ). In other words, the cavity 613 the cavity cathode 102s penetrate, eg along the beam axis 111 ,

The cavity cathode 102s can for generating an electron beam 502e in a direction of the cavity opening 602r be used. In other words, the electron beam 502e in one direction from the cavity cathode 102s propagate away, in which the cavity cathode 102s is open. The outlet opening 106 can through the cavity opening 602r be provided or which, in the direction of the anode 104 is aligned.

The cavity 613 can be a cross-sectional area 613q transverse to the beam axis 111 which is equal to or greater than the cross-sectional area 106q the outlet opening 106 is.

In the cavity opening 602r or the cavity 613 the emission range can be provided. In other words, the cavity 613 Surrounded by an emitting surface, for example, bounded, be, or, which of a cathode 102s (Cavity cathode) is provided. The cavity 613 can be along the beam axis 111 from the outlet 106 off at the cathode 102s over or into the cathode 102s extends into it.

The beam-bundling electrode 304 (can also be used as a focusing electrode 304 be designated, cf. 3B 5A ) may have an opening with a cross section which is larger than a cross section of the cavity opening 602r ,

7A . 7B and 7C each illustrate a cathode assembly 102 according to various embodiments in different views.

According to various embodiments, the cathode assembly 102 or their cathode 102s an opening structure 702 have (eg columns or slots). The opening structure 702 can an opening 702 or more openings 702 , eg optionally additional openings 702o , which differs from the emission surface (hidden in the view) (or from the emission region 113 out) through the cathode assembly 102 or their cathode 102s extend through.

The openings 702 . 702o the opening structure 702 can create a current path 702p defining which passes around the emission region for heating the cathode assembly 102 or their cathode 102s by means of an electric current (which along the current path 702p flows). The current path 702p can be between two contact areas of the cathode assembly 102 or their cathode 102s in which the cathode arrangement 102 or their cathode 102s is electrically contacted by means of a power supply.

The opening (s) 702 . 702o the opening structure 702 can / can, for example, transverse to the beam axis 111 partially (eg to a large extent) through the cathode assembly 102 or their cathode 102s extend through, as in 7A in a side view (eg transverse to the beam axis 111 ) is illustrated. Illustratively, the cathode arrangement 102 or their cathode 102s a plurality of annular portions (ring structure) or tubular portions (pipe structure), which are connected in pairs by means of a web.

Alternatively or additionally, the opening (s) may / may 702 . 702o the opening structure 702 eg along the beam axis 111 at least partially (ie partially or completely) through the cathode assembly 102 or their cathode 102s extend through, as in 7B in a schematic cross-sectional view (eg transverse to the beam axis 111 cut) is illustrated. The cathode arrangement 102 or their cathode 102s can be clearly designed as a slotted ring structure or pipe structure.

Alternatively, the opening (s) can 702 . 702o the opening structure 702 eg transverse to the beam axis 111 spiraling at least partially through the cathode assembly 102 or their cathode 102s extend through, as in 7C is illustrated in a perspective view. The cathode arrangement 102 or their cathode 102s can then be illustratively spirally formed.

8A illustrates a cathode assembly 102 according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut), eg the in 7C illustrated cathode assembly 102 , wherein the cathode assembly 102 or their cathode 102s a (eg along a tube shape) single-layer wound coil or may be formed therefrom. In other words, the cathode assembly 102 or their cathode 102s a spiral ladder 802 (eg a wire). The current path may be (spirally) extended along the winding of the coil. The leader 802 may have a polygonal cross-section, for example in the form of a flat wire. Alternatively, the conductor 802 have a round cross-section.

8B illustrates a processing arrangement 800b according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

According to various embodiments, the processing arrangement 800b (Electron beam process arrangement) a vacuum chamber 612 (processing chamber 612 ), in which several impact areas 808a . 808b are arranged. Furthermore, the processing arrangement 800b at least one electron beam source 502 which is set up, a processing area 611 or a target disposed therein 810 to heat, eg to heat and / or to evaporate, to melt and / or to sublimate.

Furthermore, the processing arrangement 800b a deflection arrangement 506 which, with the electron beam source 502 can be coupled. The electron beam source 502 and the deflection assembly 506 may be arranged such that the electron beam 512e . 522e in different areas 808a . 808b (Impact areas) in the vacuum chamber 612 can be distracted.

According to various embodiments, in a vacuum chamber, eg the processing chamber 612 and / or a chamber of the chamber system (eg the beam generating chamber 504 and / or the deflection chamber 508 ), a vacuum in the region of high vacuum or ultrahigh vacuum may or may not be provided. In this case, the vacuum can be provided by means of a vacuum pump arrangement (not shown), wherein the vacuum pump arrangement can have, for example, at least one high-vacuum pump (for example a turbomolecular pump).

The deflection arrangement 506 may comprise, in addition to the elements for beam deflection, an electron-optical lens to the electron beam 512e . 522e on the respective impact area 808a . 808b to bundle. For example, the deflection arrangement 506 comprise one or more coils for generating a magnetic field and may additionally comprise a computerized or computerized beam delivery system, wherein the computerized or computerized beam delivery system includes, for example, deflection parameters for the deflection assembly 506 for deflecting the electron beam 512e . 522e can provide, so that by means of the deflection 506 the electron beam 512e . 522e accordingly in the processing chamber 612 can be distracted.

As in 8B is illustrated, the electron beam 512e in a first operating mode according to a first deflection parameter set (comprising a plurality of deflection parameters) in a first range 808a (first impact area 808a ) in the processing chamber 612 be distracted (hit) or become. Furthermore, the electron beam 522e in a second operating mode according to a second deflection parameter set into a second range 808b (second impact area 808b ) in the processing chamber 612 be distracted (hit) or become.

9 illustrates an electron beam source 900 according to various embodiments in a schematic cross-sectional view (eg along the beam axis 111 cut).

Between the cathode 102s and the anode 104 For example, the acceleration voltage U _{B can be} provided or, for example, by means of the power supply 202 , Between the cathode 102s and the beam-converging electrode 304 a Strahlfokussierspannung U _{K can be} provided or be, for example by means of the power supply 202 and / or by means of their holding structure. Between two connection areas of the cathode 102s a heating voltage U _{H can be} provided or be, for example by means of the heater 212 ,

According to various embodiments, the emission area 102f and the electron displacer 102v the cathode 102s be equipotential with each other. This can be achieved that the electron displacer 102v and the emission area 102f lie on a common cathode potential.

10A illustrates an electron beam source 1000a according to various embodiments in a schematic cross-sectional view.

The cathode arrangement 102 can be an emission area 102f (Eg primary emission surface, eg Glühemissionsfläche), which for emitting 112 of electrons in an emission area 113 along a main emission direction 112 is set up. The emission area 113 can be descriptive of the emission area 102f adjoin. This can change the cross-sectional area 113q of the emission range 113 from the emission area 102f be limited. The main emission direction 112 can with the beam axis a main emission angle 112w which is equal to or less than about 90 ° and greater than about 45 °, eg greater than about 60 °.

10B illustrates a cathode 102s according to various embodiments in a schematic surface unfolding 1000b . 1000c , where in 1000b the face 102q in plan view or cross-sectional view and in 1000c the emission area 102f is illustrated.

The size of the face 102q may be the difference of a cross-sectional area 1002 the cathode 102s (Outer cross-sectional area 1002 ) and the cross-sectional area 1008 (Internal cross-sectional area 1008 ) of the cavity 613 at the cavity opening 602r (or on the face 102q ). The smaller the outer cross-sectional area 1002 and / or the larger the inner cross-sectional area 1008 is, the smaller the face area 102q be.

The size of the emission area 102f can from the product of the scope 1004 the internal cross-sectional area 1008 and the extent 1006 the cathode 102 along the beam axis 111 be defined. The bigger the extension 1006 the cathode 102 and / or the internal cross-sectional area 1008 (or their scope 1004 ), the larger the emission area 102f be.

Indicates the face 102q can be oblique to the beam axis extending surface portions, the size of the end face 102q from the difference (cross-sectional difference) of the outer cross-sectional area 1002 and the inner cross-sectional area 1008 be defined or become. In other words, the size of the end face 102q from a projection onto a surface transverse to the beam axis 111 be defined.

For example, the cathode 102s an extension 1006 along the beam axis 111 which are equal to or greater than the material thickness 1010 transverse to the beam axis 111 is, for example, equal to or more than twice as large as the material thickness 1010 , eg equal to or more than three times the material thickness 1010 , eg equal to or more than four times the material thickness 1010 , eg equal to or more than five times the material thickness 1010 , eg equal to or more than six times the material thickness 1010 , eg equal to or more than ten times the material thickness 1010 ,

For example, an extension of the inner cross-sectional area 1008 (Eg, a diameter of the cavity 613 ) at a portion near the anode in a range from about 5 mm to about 19 mm, eg about 14 mm. Alternatively or additionally, an expansion of the inner cross-sectional area 1008 (Eg, a diameter of the cavity 613 ) at a portion remote from the anode in a range of about 14 mm to about 25 mm, eg about 19 mm.

According to various embodiments, the electron displacer 102v in the cavity 613 be arranged (for example, concentric) or extend into this. The electron displacer 102v may comprise or be formed from a solid rod, eg comprising or formed from the sacrificial material. Alternatively, the electron displacer 102v comprise or be formed from a tube whose passage opening is directed to the sacrificial material.

11 illustrates an electron beam source according to various embodiments in a schematic cross-sectional view.

According to various embodiments, the cross-sectional area 113q of the emission range 113 or the cross-sectional area 613q of the cavity 613 in one direction to the anode 104 (eg parallel to the beam axis 111 ) increase.

The cavity 613 According to various embodiments, it may have the shape of a blunt body (with the emitting surface running along the peripheral surface of the bluff body), eg a blunt cone (truncated cone).

The cross-sectional area of the cavity may be circular or of another shape (e.g., also angular).

The emission area 113 can in the cavity 613 be arranged and, for example, in its extension smaller than the cavity 613 (eg along the beam axis 111 ).

The material of the cathode 102s (Cathode material) may or may not be selected according to a given emissivity for thermal electrons. For example, the cathode 102s or their emission surface 102f have an emissivity greater than an emissivity of the focusing electrode 304 , the shielding 302 , the victim structure 402 , the frontal area 102q , the outside of the cathode and / or the anode 104 , The emissivity of a surface may be greater the smaller a work function of the surface is and / or the greater a temperature of the surface.

Illustratively, the cathode 102s and the anode 104 be formed similarly, wherein the anode 104 a passage opening 104o through which the electrons (in the form of an electron beam) can pass, and wherein the cathode 102s a passage opening 613 (Cavity 613 ), through which the ions can pass (eg in the form of an ion beam). The cathode 102s and the anode 104 can be set up and aligned with each other so that the electrons through the passage opening 104o the anode 104 passed through and the ions through the passage opening 613 the cathode 102 passed through, for example by means of the electric field between the anode 104 and the cathode 102s ,

For example, the emission surface 102f be arranged outside the propagation region of the ions (which may be smaller than the propagation region of the electrons), for example between the end face and the cavity. For example, the (eg minimal) cross-sectional area 613q the passage opening 613 the cathode 102s larger than the cross-sectional area of the electron beam.

According to various embodiments, the electron displacer 102v through the cavity 613 extend (eg, concentric) through or at least a corresponding path 111d be displaceable. For example, the electron displacer 102v from the sacrificial structure 402 extend away and / or a through hole 116d which are adjacent to the sacrificial structure 402 adjacent and / or on the victim structure 402 is directed.

12A illustrates a cathode 102s According to various embodiments in a schematic cross-sectional view (eg transverse to the beam axis 111 cut).

According to various embodiments, the cathode 102s two electrical contact structures 102k have, where the cathode 102s be contacted or can be. The electrical contact structures 102k can be eg from the cavity 613 extend away. Between the two electrical contact structures 102k can be a current path 704p through the cathode 102s be defined, along which an electric current through the cathode 102s can flow through it.

12B illustrates a cathode 102s According to various embodiments in a schematic cross-sectional view (eg transverse to the beam axis 111 cut).

The two electrical contact structures 102k can be electrically conductive and / or physically, for example monolithic, connected to the cathode.

For example, a sheet in the form of a half-shell 1202 are formed, of which two terminal portions of the contact structure 102k extend away. For example, two half-shells 1202 with their contact structure 102k lying against each other the cavity 613 form.

According to various embodiments, the cathode 102s be contacted by means of clamping, screwing or plugging.

13A and 13B illustrate an electron beam source according to various embodiments in a schematic cross-sectional view (eg transverse to the beam axis 111 cut) in a first configuration 1300a and a second configuration 1300b , The illustrated view shows one side of the electron beam source from the beam axis 111 starting in which the trajectories 1311 the electrons are illustrated (eg analogous to 1A ). For example, the other side of the electron beam source may also be configured (eg, radially symmetric).

In the first configuration 1300a is a distance of the electron displacer 102v from the anode 104 and / or the focusing electrode 304 larger than in the second configuration 1300b , In other words, the electron displacer 102v in the second configuration 1300b continue into the cavity 613 extends into it (eg by a distance greater) than in the first configuration 1300a , For example, the electron displacer 102v in the first configuration 1300a outside the cavity 613 be arranged and / or in the second configuration 1300b through the cavity 613 extending through it. For example, the electron displacer 102v in the second configuration 1300b to the passage opening of the focusing electrode 304 adjoin.

The further the electron displacer 102v in the cavity 613 extends, the smaller the yield of electrons in the electron beam and / or the smaller may be a divergence of the electron beam. The divergence can be a measure of the average angle deviation 1301 the trajectories of the electrons propagating away from the electron beam source from the beam axis 111 be. The greater the divergence, the more electrons exhibit a divergent propagation direction and / or the more divergent the propagation direction of the electrons propagating away from the electron beam source. Divergence, in other words, represents the decrease in power density (power per cross-sectional area 104q ) of the electron beam with increasing distance from the electron beam source, ie the gradient of the power density of the electron beam along the beam axis (which increases with increasing divergence).

In the first configuration 1300a (Illustratively, a high performance operation configuration 1300a ) can be clearly provided an electron beam with a greater divergence and / or greater power than in the second configuration 1300b (Illustratively a high convergence operation configuration 1300a ).

A similar effect can be evoked by the electrical potential of the electron displacer 102v relative to the emission area 102f is changed, for example, their potential difference to each other. Thus, the displacement effect of the electron displacer can be clearly illustrated 102v to be changed. The more negative the electron displacer 102v is charged, the stronger this can the electrons (or their trajectories) from the inner region 613K of the cavity 613 displace, which reduces the divergence of the electron beam.

According to various embodiments, the electron displacer 102v in a third configuration, a more negative electrical potential may be provided than in the second configuration 1300b ,

Conversely, in the third configuration (illustratively, an additional high convergence operation configuration), an electron beam may be provided with a smaller divergence and / or lower power than in the second configuration 1300b , Therefore, with regard to the third configuration, the second configuration can also be used 1300b be used as a high performance operation configuration.

The change in the position of the electron displacer 102v and the electrical potential of the electron displacer 102v can be superimposed on each other to match the characteristics of the electron beam. Thus, a wide range of parameters can be spanned, which influences the characteristics of the electron beam, such as divergence and power.

According to various embodiments, the electron beam source may be a controller 208 which is set up, the position of the electron displacer 102v relative to the emission area 102f and / or the electrical potential of the electron displacer 102v relative to the emission area 102f to control and / or regulate, eg based on a user input or a measured value. The measured value can represent, for example, a power of the electron beam and / or its convergence.

Clearly, with an increasingly negative electric potential of the electron displacer 102v and / or with increasing extension of the electron displacer 102v in the cavity 613 into a displacement of the electrons (or their trajectories 1311 ) from the inner area 613K of the cavity 613 increase, as described in more detail below.

14A and 14B illustrate an electron beam source according to various embodiments in a schematic cross-sectional view (eg transverse to the beam axis 111 cut) in a high power operation configuration 1400a and a high convergence operation configuration 1400b ,

The high performance operation configuration 1400a can, for example, the first configuration 1300a and the high convergence operation configuration 1400b can the second configuration 1300b or the third configuration. Alternatively, the high power operation configuration 1400a the second configuration 1300b and the high convergence operation configuration 1400b may be the third configuration.

In 14A and 14B is the course of the trajectory 1311 exemplary of an electron through the cavity 613 illustrated. The course can vividly also a bevy of trajectories 1311 represent for several electrons.

Starting from the emission area 102f electrons are in the cavity 613 emitted from one direction (eg from direction 1401 ), which are transverse to the beam axis 111 is. In the high performance mode configuration 1400a traverses the trajectory 1311 the electrons the inner area 613K (also as a core area 613K referred to) of the cavity 613 , eg the beam axis 111 cruising (in the projection shown). By means of the acceleration voltage (eg between anode 104 and cathode 102s ) the electron gets out of the cavity 613 out (eg in the direction of the anode 104 ) accelerates and traverses the anode opening 104o , The angle 1301 (also as exit angle 1301 designated), the trajectory at the anode opening 104o to the beam axis 111 is a measure of the divergence of the electron beam provided.

In the high convergence mode configuration 1400b the electrons get out of the core area 613K displaced, which has the consequence that the curvature of the trajectory 1311 and thus their exit angle 1301 is reduced. This increases the convergence of the generated electron beam.

It becomes clear in the high convergence operation configuration 1400b the propagation area, which the electrons in the cavity 613 available is reduced. The electron displacer 102v can due to its physical extent one (eg the beam axis 111 enveloping) define displacement range in which the electrons can not get. The displacement region may become increasingly negative potential of the electron displacer 102v expand and thus the electrons (or their trajectories) increasingly from the core area 613K displace. Displacement may also be referred to as at least partial shielding of the beam axis from electrons.

15A and 15B illustrate an electron beam source 1500a . 1500b similar to the electron beam sources described above (compare, for example 1A and 1B ).

According to various embodiments, the electron beam source 1500a . 1500b an actuator 1502 have, by means of which a position of the electron displacer 102v relative to the emission area 102f is adjustable. For example, the electron displacer 102v through more than about half of the cavity 613 through, for example, more than about 75% of the cavity 613 or from this (eg in the direction of the anode 104 ) project out. The adjusting device 1502 For example, it may include and / or be coupled to a bearing device that houses the electron displacer 102v outsourced. The bearing device may for example comprise or be formed from a translation bearing (eg a sliding joint). Alternatively or additionally, the storage device can have or be formed from a chuck which has a plurality of rollers, by means of which the electron displacer 102v is supported.

Optionally, the electron displacer 102v be provided as a rod (eg as a wire), for example as a tube (ie tubular).

Optionally, the adjusting device 1502 be set up, the electron displacer 102v to track. This can be a change in the characteristics of the electron beam due to the consumption of the electron displacer 102v be counteracted. For example, the controller 208 be set up, a position of the electron displacer 102v and / or an extension of the electron displacer 102v to maintain in the cavity. This can be done by the controller 208 be set up, a position of the electron displacer 102v relative to the emission area 102f to capture and the adjusting device 1502 to control and / or to regulate, for example based on the detected position of the electron displacer 102v ,

16 illustrates a method 1600 according to various embodiments in a schematic flow diagram.

The procedure 1600 can in 1601 comprising: emitting electrons from a first direction into a cavity. The first direction may, for example, be perpendicular to the emission surface and / or perpendicular to the beam axis 111 be.

The emitting may include, for example: generating a primary emission of the electrons into the cavity, e.g. an annealing emission. The generating of the glow emission may include: heating the emission surface to a temperature equal to or greater than an emission temperature, which is e.g. clearly a desired emission current density allows. For example, the first direction may be at an angle to the beam axis, e.g. be perpendicular to this. The emission temperature may represent the work function of the emission surface. Clearly, the emission temperature can designate the temperature at which the work function is overcome. The work function can be a material constant. The emission current density may be a function of temperature.

The procedure 1600 can in 1603 accelerating the electrons out of the cavity in a second direction which is at an angle (eg, transverse) to the first direction, so that they have curved trajectories. The acceleration may include: generating an electric field having a field strength (eg, with at least one directional component) along the second direction (eg, along the beam axis). The generation of the electric field can be carried out using an anode and a cathode, for example by providing an electrical potential difference between them. The second direction may, for example, be parallel to the beam axis.

The procedure 1600 can in 1605 have: displacing the trajectories from an inner region of the cavity. By displacing the trajectories from an interior region of the cavity, a density of electrons in the interior region of the cavity can be reduced, ie, the electrons can be repelled in a direction away from the beam axis.

The displacement may include: reducing the field strength of the electric field in the inner region. Reducing the field strength of the electric field in the inner region can be done by forming a repulsion potential for the electrons in the inner region. Clearly, the displacement may have the effect that the spatial distribution of the electric field in the cavity is changed.

For example, one (e.g., center-symmetric) of the movement of the electrons may be provided with opposite potential (also referred to as repulsion potential, e.g., negative potential with respect to the anode) in the inner region.

The repulsion potential may or may not be provided by means of the electron displacer, e.g. By bringing the electron displacer into the cavity and / or by changing an electrical potential in the interior region of the cavity (eg, that of one or the electron displacer extending into or through the cavity) in a negative direction (eg, increased) becomes.

The electron displacer or the repulsion potential clearly delimits the space available to the electrons within the cavity.

The displacement may include, for example: at least partially increasing a distance of the trajectories from the beam axis and / or at least partially avoiding crossovers (e.g., reducing the number of crossovers, for example) of the trajectories with the beam axis.

17 illustrates a method 1700 according to various embodiments in a schematic flow diagram.

The procedure 1700 can in 1701 comprising: emitting electrons into a cavity from a first direction which is transverse to the beam axis. The emitting may include, for example: generating a primary emission of the electrons into the cavity, eg an annealing emission. Generating the glow emission may include: heating the emission surface to a temperature equal to or greater than an emission temperature, eg, allowing for a desired emission current density. The emission temperature may represent the work function of the emission surface.

The procedure 1700 can in 1703 comprise: displacing the electrons from an inner region of the cavity through which the beam axis passes. The displacement may include: reducing the field strength of the electric field in the inner region. Reducing the field strength of the electric field in the inner region may be accomplished by introducing an electron displacer into the cavity and / or by applying an electrical potential in the interior region of the cavity (eg that of one or the electron displacer entering or into the cavity) extending therethrough) in a negative direction (eg enlarged) is changed. An electron displacer may be introduced into the cavity, thereby altering the distribution of electrical potential in the interior region of the cavity.

The displacement may include, for example: at least partially increasing a distance of trajectories from the beam axis and / or at least partially avoiding crossovers of the trajectories with the beam axis.

Claims (17)

Electron beam source ( 100a . 100b . 500a ), comprising: a cathode ( 102s ) and an anode ( 104 . 604 ), which has a beam axis ( 111 ) for generating an electron beam along the beam axis ( 111 ); the cathode ( 102s ) comprising: a cavity ( 613 ), which extends along the beam axis ( 111 ) into the cathode ( 102s ) into or through it; An emission area ( 102f ) for emitting electrons into the cavity ( 613 ), the emission area ( 102f ) the cavity ( 613 ) bounded transversely to the beam axis; and an electron displacer ( 102v ), which extends along the beam axis ( 111 ) in the cavity ( 613 ) and / or extends therethrough. Electron beam source ( 100a . 100b . 500a ) according to claim 1, further comprising: a bearing device, by means of which the electron displacer ( 102v ), wherein the bearing device is the electron displacer ( 102v ) provides a degree of translation according to which the electron displacer ( 102v ) is displaceable. Electron beam source ( 100a . 100b . 500a ) according to claim 1 or 2, further comprising: an actuating device ( 1502 ), by means of which a position of the electron displacer ( 102v ) relative to the emission surface ( 102f ) is adjustable. Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 3, wherein the electron displacer ( 102v ) has a rod and / or a tube, which along the beam axis ( 111 ) are elongated. Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 4, wherein the emission surface ( 102f ) the electron displacer ( 102v ) and / or the cavity ( 613 ) at least partially surrounds. Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 5, further comprising: an electrical shield ( 302 ), which the cathode ( 102s ) for electrically limiting the emission area ( 102f ) surrounds. Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 6, further comprising: a coupling structure ( 302k ), which the electron displacer ( 102v ) and the emission area ( 102f ) electrically coupled with each other. Electron beam source ( 100a . 100b . 500a ) according to claim 7, wherein the coupling structure ( 302k ) further the electron displacer ( 102v ) and the emission area ( 102f ) thermally decoupled from each other and / or the electron displacer ( 102v ) provides a lower operating temperature than the emission surface ( 102f ). Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 8, further comprising: a beam focusing electrode ( 304 ), which between the emission surface ( 102f ) and the anode ( 104 . 604 ) and along the beam axis ( 111 ) is penetrated by a passage opening. Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 9, the electron displacer ( 102v ) further comprising: a victim structure ( 402 ) for absorbing ions formed in the electron beam, which at least partially in the direction of the anode ( 104 . 604 ) is exposed. Electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 10, further comprising: a heating device ( 212 ), which is set up, the emission area ( 102f ) supplying thermal energy for heating the emission surface ( 102f ). Electron beam source ( 100a . 100b . 500a ) according to any one of claims 1 to 11: wherein the emission area ( 102f ) along the beam axis ( 111 ) has an extension; and wherein the electron displacer ( 102v ) along the beam axis ( 111 ) by a distance in the cavity ( 613 ) extends or is displaceable, which is greater than half of the expansion. Electron gun ( 500b ), comprising: • an electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 12, • a vacuum chamber ( 504 ), in which the electron beam source ( 100a . 100b . 500a ) and which along the beam axis ( 111 ) is penetrated by an opening, so that the electron beam from the vacuum chamber ( 504 ) through the opening ( 504o ) can escape through; and a deflection arrangement ( 506 ) for deflecting the from the vacuum chamber ( 504 ) emitted electron beam according to one or more deflection parameters. Processing arrangement ( 600a ), comprising: a processing chamber ( 612 ), which defines a processing area ( 611 ) having; and an electron beam source ( 100a . 100b . 500a ) according to one of claims 1 to 12 for irradiating the processing area ( 611 ) by means of an electron beam. Electron beam source ( 100a . 100b . 500a ), comprising: a cavity cathode ( 102s ) and an anode ( 104 . 604 ) for generating an electron beam; and an electron displacer ( 102v ), which within the cavity cathode ( 102s ) is arranged and / or slidably mounted in this.  A method of forming an electron beam along a beam axis, the method comprising: Emitting electrons into a cavity from a direction which is transverse to the beam axis; • Displacing the electrons from an inner region of the cavity through which the beam axis passes.  Use of a solid in a cavity cathode for at least partially shielding the beam axis from electrons.

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