DE102016115723A8 - Wellenleiterstruktur und optisches System mit Wellenleiterstruktur - Google Patents

Wellenleiterstruktur und optisches System mit Wellenleiterstruktur Download PDF

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Publication number
DE102016115723A8
DE102016115723A8 DE102016115723.6A DE102016115723A DE102016115723A8 DE 102016115723 A8 DE102016115723 A8 DE 102016115723A8 DE 102016115723 A DE102016115723 A DE 102016115723A DE 102016115723 A8 DE102016115723 A8 DE 102016115723A8
Authority
DE
Germany
Prior art keywords
waveguide structure
optical system
structure optical
waveguide
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102016115723.6A
Other languages
English (en)
Other versions
DE102016115723A1 (de
Inventor
Götz Erbert
Jörg Fricke
Andre Müller
Hans Wenzel
Bernd Sumpf
Katrin Paschke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferdinand Braun Institut GgmbH Leibniz Institut fuer Hoechstfrequenztechnik
Original Assignee
Forschungsverbund Berlin FVB eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungsverbund Berlin FVB eV filed Critical Forschungsverbund Berlin FVB eV
Priority to DE102016115723.6A priority Critical patent/DE102016115723A1/de
Priority to PCT/EP2017/071030 priority patent/WO2018036964A1/de
Priority to US16/327,419 priority patent/US10833478B2/en
Priority to EP17758120.4A priority patent/EP3501069A1/de
Publication of DE102016115723A1 publication Critical patent/DE102016115723A1/de
Publication of DE102016115723A8 publication Critical patent/DE102016115723A8/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)
DE102016115723.6A 2016-08-24 2016-08-24 Wellenleiterstruktur und optisches System mit Wellenleiterstruktur Ceased DE102016115723A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102016115723.6A DE102016115723A1 (de) 2016-08-24 2016-08-24 Wellenleiterstruktur und optisches System mit Wellenleiterstruktur
PCT/EP2017/071030 WO2018036964A1 (de) 2016-08-24 2017-08-21 Wellenleiterstruktur und optisches system mit wellenleiterstruktur
US16/327,419 US10833478B2 (en) 2016-08-24 2017-08-21 Waveguide structure and optical system with waveguide structure
EP17758120.4A EP3501069A1 (de) 2016-08-24 2017-08-21 Wellenleiterstruktur und optisches system mit wellenleiterstruktur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102016115723.6A DE102016115723A1 (de) 2016-08-24 2016-08-24 Wellenleiterstruktur und optisches System mit Wellenleiterstruktur

Publications (2)

Publication Number Publication Date
DE102016115723A1 DE102016115723A1 (de) 2018-03-01
DE102016115723A8 true DE102016115723A8 (de) 2018-06-28

Family

ID=59714010

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016115723.6A Ceased DE102016115723A1 (de) 2016-08-24 2016-08-24 Wellenleiterstruktur und optisches System mit Wellenleiterstruktur

Country Status (4)

Country Link
US (1) US10833478B2 (de)
EP (1) EP3501069A1 (de)
DE (1) DE102016115723A1 (de)
WO (1) WO2018036964A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539571A (en) * 1992-09-21 1996-07-23 Sdl, Inc. Differentially pumped optical amplifer and mopa device
US5652812A (en) * 1995-08-04 1997-07-29 Alcatel N.V. Integrated opto-electronic component
WO2001057973A1 (en) * 2000-01-20 2001-08-09 Princeton Lightwave Inc. High power single mode semiconductor laser
DE102009028823A1 (de) * 2009-08-21 2011-02-24 Forschungsverbund Berlin E.V. Diodenlaser und Laserresonator für einen Diodenlaser mit verbesserter lateraler Strahlqualität
EP2913902A1 (de) * 2014-02-28 2015-09-02 Forelux Inc. Gitter-basierter optischer Sender
US20160006216A1 (en) * 2013-04-09 2016-01-07 Nlight Photonics Corporation Flared laser oscillator waveguide

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793521A (en) 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
US6826220B2 (en) * 1999-12-27 2004-11-30 Corning O.T.I. S.R.L. Semiconductor laser element having a diverging region
GB2507527A (en) * 2012-11-01 2014-05-07 Oclaro Technology Ltd Semiconductor DBR laser
CN105765803B (zh) * 2013-11-27 2020-01-07 日本碍子株式会社 光栅元件以及外部谐振器型发光装置
DE112015000391T5 (de) 2014-01-14 2016-09-29 Ngk Insulators, Ltd. Lichtemittierende Vorrichtung mit externem Resonator
DE112015002094B4 (de) * 2014-05-01 2019-08-22 Ngk Insulators, Ltd. Lichtemittierende Vorrichtung des äußeren Resonatortyps

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539571A (en) * 1992-09-21 1996-07-23 Sdl, Inc. Differentially pumped optical amplifer and mopa device
US5652812A (en) * 1995-08-04 1997-07-29 Alcatel N.V. Integrated opto-electronic component
WO2001057973A1 (en) * 2000-01-20 2001-08-09 Princeton Lightwave Inc. High power single mode semiconductor laser
DE102009028823A1 (de) * 2009-08-21 2011-02-24 Forschungsverbund Berlin E.V. Diodenlaser und Laserresonator für einen Diodenlaser mit verbesserter lateraler Strahlqualität
US20160006216A1 (en) * 2013-04-09 2016-01-07 Nlight Photonics Corporation Flared laser oscillator waveguide
EP2913902A1 (de) * 2014-02-28 2015-09-02 Forelux Inc. Gitter-basierter optischer Sender

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FU , Yunfei [et al.]: Efficient adiabatic silicon-on-insulator waveguide taper. In: OSA Publishing, The Optical Society, Photonics Research, Vol. 2, No. 3, June 2014 [abgerufen am 13.12.2016] *

Also Published As

Publication number Publication date
DE102016115723A1 (de) 2018-03-01
EP3501069A1 (de) 2019-06-26
WO2018036964A1 (de) 2018-03-01
US20190273359A1 (en) 2019-09-05
US10833478B2 (en) 2020-11-10

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R012 Request for examination validly filed
R083 Amendment of/additions to inventor(s)
R016 Response to examination communication
R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: FERDINAND-BRAUN-INSTITUT GGMBH, LEIBNIZ- INSTI, DE

Free format text: FORMER OWNER: FORSCHUNGSVERBUND BERLIN E.V., 12489 BERLIN, DE

R082 Change of representative

Representative=s name: GULDE & PARTNER PATENT- UND RECHTSANWALTSKANZL, DE

R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final