DE102016111573A1 - MULTIFUNCTIONAL CONNECTING MODULE AND SUPPORT WITH MULTIFUNCTIONAL CONNECTING MODULE FIXED THEREIN - Google Patents

Abstract

A connection module includes a metal clip having a first end portion, a second end portion, and a middle portion extending between the first end portion and the second end portion. The first end portion is configured for external attachment to a semiconductor die or semiconductor die assembly mounted on a carrier or to a metal region of the carrier. The second end portion is configured for external attachment to another metal portion of the carrier or to another semiconductor die or semiconductor die assembly mounted to the carrier. The module also includes a magnetic field sensor attached to the metal clip. The magnetic field sensor works to sense a magnetic field produced by current flowing through the metal terminal. The connection module may be used to form a direct electrical connection between components and / or metal portions of a carrier to which the module is attached.

Description

The present application relates to multifunctional connection modules for mounting on supports, and more particularly to multifunctional connection modules with integrated magnetic field sensors.

Power modules contain one or more power semiconductor chips such. B. Leistungsstransistor- and / or power diode chips, which are attached to a substrate such. B. a lead frame or a ceramic substrate having a structured metallized surface, are attached. In any case, accurate current and / or temperature measurements are needed to ensure reliable and safe operation of the power assembly. Some current / temperature sensors are using external components such. For example, shunt resistors are implemented that are highly accurate but complicate the construction of the assembly. Other conventional approaches incorporate an electrical type sensor into the power semiconductor chip. This approach reduces the complexity of the assembly design, but at the expense of reduced precision. Typical integrated sensors of the electrical type such. As a diode whose voltage for temperature or current is representative, have low sensing accuracy, z. B. ± 28%. The sensing accuracy can be improved with custom calibration, e.g. B. to ± 2%, but this requires calibration effort, which increases the cost. Some applications use a defined margin or cut-off feature to avoid overcurrent / heat and damage to the power semiconductor devices. The same problems apply to carriers such. For example, circuit boards such as PCBs may be used, and sensing power and / or temperature of components attached to a board may produce inaccurate results or may require expensive solutions.

An object of the invention is to provide an improved connection module and support structure.

The object of the invention can be achieved by the features of the independent claims. Embodiments and further developments are specified in the dependent claims.

According to an embodiment of a connection module, the connection module comprises a metal clamp having a first end portion, a second end portion and a middle portion extending between the first and second end portions. The first end portion is configured for external attachment to a semiconductor die or a semiconductor die assembly mounted on a support or metal portion of the support. The second end portion is configured for external attachment to another metal portion of the carrier or to another semiconductor die or semiconductor die assembly mounted to the carrier. The connection module further includes a magnetic field sensor attached to the metal terminal. The magnetic field sensor works to sense a magnetic field produced by current flowing through the metal terminal.

According to one embodiment of a carrier structure, the carrier structure comprises a carrier having a plurality of metal regions embedded in or attached to an electrically insulating material, a first semiconductor die or semiconductor chip assembly attached to a first one of the metal regions of the carrier is mounted, and a first connection module. The first connection module comprises a metal clip having a first end portion, a second end portion, and a middle portion extending between the first and second end portions. The first end portion is attached to the first metal region of the carrier or to the first semiconductor bare chip or semiconductor chip assembly. The second end portion is attached to a second metal region of the carrier or to a second semiconductor bare chip or semiconductor die assembly attached to the carrier. The first connection module further includes a magnetic field sensor attached to the metal terminal. The magnetic field sensor works to sense a magnetic field produced by current flowing through the metal terminal.

Persons skilled in the art will recognize additional features and advantages upon reading the following detailed description and upon considering the accompanying drawings.

The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding like parts. The features of the various illustrated embodiments may be combined unless they are mutually exclusive. Embodiments are illustrated in the drawings and described in detail in the following description.

1A FIG. 12 illustrates a top-down plan view of a first embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

1B represents a cross-sectional view of the assembly along the AA 'marked line in 1A represents.

2 FIG. 12 illustrates a top-down plan view of a second embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

3 FIG. 12 illustrates a top-down plan view of a third embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

4 FIG. 12 illustrates a top-down plan view of a fourth embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

5 FIG. 12 illustrates a top-down plan view of a fifth embodiment of a semiconductor device having an integrated magnetic field sensor.

6 FIG. 12 illustrates a top-down plan view of a sixth embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

7 FIG. 12 illustrates a top-down plan view of a seventh embodiment of a semiconductor package having an integrated magnetic field sensor.

8th FIG. 12 illustrates a top-down plan view of an eighth embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

9A FIG. 12 illustrates a top-down plan view of a ninth embodiment of a semiconductor device having an integrated magnetic field sensor.

9B provides a cross-sectional view of the assembly along the line marked BB 'in FIG 9A represents.

10 FIG. 12 illustrates a top-down plan view of a tenth embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

11A FIG. 12 illustrates a top-down plan view of an eleventh embodiment of a semiconductor device having an integrated magnetic field sensor. FIG.

11B provides a cross-sectional view of the assembly along the CC 'marked line in 11A represents.

12 FIG. 12 illustrates a top-down plan view of a twelfth embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

13A FIG. 12 illustrates a top-down plan view of a thirteenth embodiment of a semiconductor device having an integrated magnetic field sensor.

13B FIG. 12 illustrates a cross-sectional view of the assembly along the line labeled DD 'in FIG 13A represents.

14A FIG. 12 illustrates a top-down plan view of a fourteenth embodiment of a semiconductor package having an integrated magnetic field sensor. FIG.

14B FIG. 12 illustrates a cross-sectional view of the assembly along the line labeled EE 'in FIG 14A represents.

15A represents vectors of the magnetic field produced by the current flowing through a U-shaped metal terminal.

15B represents a sectional view of the U-shaped metal clamp, which in 15A is shown along the line marked with AA.

16A FIG. 12 illustrates a top-down plan view of a fifteenth embodiment of a semiconductor package having an integrated magnetic field sensor.

16B provides an enlarged view of an area of the in 16A shown assembly.

17 FIG. 12 illustrates a top-down plan view of a sixteenth embodiment of a semiconductor device having an integrated magnetic field sensor. FIG.

18 FIG. 12 illustrates a top-down plan view of a seventeenth embodiment of a semiconductor device having an integrated magnetic field sensor.

19A FIG. 12 illustrates a perspective view of an eighteenth embodiment of a semiconductor device having an integrated magnetic field sensor.

19B FIG. 12 is an enlarged sectional view of a portion of FIG 19A shown assembly.

20 FIG. 12 illustrates a sectional view of a nineteenth embodiment of a semiconductor device having an integrated magnetic field sensor. FIG.

21 to 23 FIG. 4 illustrates respective sectional views of three different embodiments of a self-contained multifunctional connection module including a magnetic field sensor.

24 represents a top view of the 21 shown embodiment of the multifunctional connection module.

25 represents a top view of the 22 and 23 shown embodiments of the multifunctional connection module.

26 and 27 each represent plan views of the in the 22 and 23 shown embodiments of the multifunctional connection modules, wherein the magnetic field sensor operates to implement Differenzabfühlen.

28 FIG. 12 illustrates a top view of a first embodiment of a carrier assembly using the multifunctional connection module. FIG.

29A FIG. 3 illustrates a plan view of a second embodiment of a support structure that incorporates the in 21 version of the multifunctional connection module used.

29B FIG. 12 is a sectional view of the support structure of FIG 29A along with FF 'in 29A marked line.

29C provides the same sectional view of the support structure along the line marked FF 'in FIG 29A but with the in 22 shown version of the multifunctional connection module.

29D provides the same sectional view of the support structure along the line marked FF 'in FIG 29A but with the in 23 shown version of the multifunctional connection module.

30 FIG. 12 illustrates a top view of a third embodiment of a carrier assembly using the multifunctional connection module. FIG.

31 FIG. 12 illustrates a top view of a fourth embodiment of a support structure using the multifunctional connection module. FIG.

32 FIG. 12 illustrates a plan view of a fifth embodiment of a carrier assembly using the multifunctional connection module. FIG.

33 FIG. 12 illustrates a top view of a sixth embodiment of a support structure using the multifunctional connection module. FIG.

34 FIG. 12 illustrates a top view of a seventh embodiment of a carrier assembly using the multifunctional connection module. FIG.

35 FIG. 12 illustrates a plan view of an eighth embodiment of a support structure using the multifunctional connection module. FIG.

36 FIG. 12 illustrates a plan view of a ninth embodiment of a carrier assembly using the multifunctional connection module. FIG.

37 FIG. 12 illustrates a plan view of a tenth embodiment of a carrier structure using the multifunctional connection module. FIG.

Embodiments described herein represent the integration of a magnetic field sensor such as. B. a magnetoresistive sensor (XMR sensor) or a Hall sensor in a semiconductor module or an independent multifunctional connection module for integrated current and / or temperature measurement ready. The magnetic field sensor generates a signal in response to a magnetic field produced by current flowing in a current path of a semiconductor chip contained in the package or near the multifunctional interconnect module. The magnitude of the signal is proportional to the amount of current flowing in the current path and indicates the power consumption of the semiconductor chip and / or the temperature of the assembly or multifunctional connection module. The semiconductor package or multifunctional interconnection module may be provided with or without galvanic isolation between the magnetic field sensor and the semiconductor chip (in the case of an assembly) or the metal terminal (in the case of a multifunctional interconnect module).

The magnetic field sensor may be integrated with the same semiconductor package as the semiconductor die for which current and / or temperature measurements are desired, located external to the package on the module's live connections, or contained in a separate multifunctional interconnect module separate from the package be. For example, the magnetic field sensor may be embedded in the semiconductor chip, disposed on the semiconductor chip, disposed on one or more of the leads of the assembly, disposed above or below a metal terminal included in the semiconductor package for electrically connecting one or more of the leads to the semiconductor die Semiconductor chip or with another of the lines is included, or disposed above or below a metal terminal, which is included in a multifunctional connection module, which is separated from the chip assembly.

In the case of a standalone multifunctional interconnect module, a bare die or chip package may be attached to a carrier such as a carrier. A printed circuit board (eg, a PCB), a ceramic substrate, a plastic module, a molded module, a lead frame, etc., and the multifunctional connection module may be used to provide electrical connection between the chip and a metal region of the chip Support to form between the chip and another chip which is attached to the carrier, or between two different metal regions of the carrier. In any event, the term "on" as used herein indicates a position in contact or in close proximity to and supported from an external surface, or to indicate an origin for attachment or wearing.

1A FIG. 12 illustrates a top-down plan view of a first embodiment of a semiconductor package, and FIG 1B represents a cross-sectional view of the assembly along the AA 'marked line in 1A Material for attaching the chip and chip metallizations are in the 1A and 1B not shown for simplicity of illustration.

The semiconductor package includes a substrate that has multiple metal lines 100 has, and a semiconductor chip 102 who is at a first out of the lines 100-1 is appropriate. The assembly may include a single semiconductor chip or more than one semiconductor chip. Any standard substrate for semiconductor devices can be used. For example, the substrate may be a leadframe having a chip "paddle" lead 100-1 at which the semiconductor chip 102 attached, and multiple signal and power lines 100-2 to 100-8 for providing signal and power connections to the semiconductor chip 102 having. In another example, the substrate may be a ceramic-based substrate, such as a ceramic substrate. A DCB substrate (direct copper bonded substrate), an ABM substrate (active metal soldered substrate) or a DAB substrate (direct aluminum bonded substrate) in which one or both major sides of a ceramic base have a patterned metallized surface that the wires 100 for attaching the semiconductor chip 102 form and signal and power connections to the semiconductor chip 102 provide. In other examples, the substrate may be a patterned metal substrate, a printed circuit board (PCB), etc. The semiconductor package may be any type of standard semiconductor package, the leads 100 for attaching the semiconductor chip 102 and providing signal and power connections for the semiconductor chip 102 having. For example, the semiconductor package may be a molded package, an open cavity package with or without a cap, an encapsulated polymer package, a PCB-based package, and so on. In any event, the term "conduit" as used herein refers to any insulated electrical conductor that is physically or electrically connected to an electrical device.

A magnetic field sensor 104 is in the same assembly as the semiconductor chip 102 integrated and in close proximity to a current path of the semiconductor chip 102 positioned so that the sensor 104 can sense the magnetic field produced by the current flowing through the current path. According to the in the 1A and 1B illustrated embodiment is the magnetic field sensor 104 over a metal clamp 106 arranged, which is included in the semiconductor device. The metal clamp 106 connects one or more of the wires 100 with the semiconductor chip 102 , In one case, the metal clamp 106 made of copper. The metal clamp 106 however, it can be made of other materials. In any case, the magnetic field sensor generates 104 a signal in response to a magnetic field produced by current flowing in a current path of the semiconductor chip 102 flows. The current path is in 1B represented by arrows.

The height of the signal generated by the magnetic field sensor 104 is proportional to the amount of current flowing in the current path and gives the power consumption of the semiconductor chip 102 and / or the temperature of the assembly. For example, in the case of a Hall sensor, a transducer that varies in the magnetic field sensor varies 104 contained, its output voltage in response to the magnetic field. In the case of a magnetoresistive sensor (XMR sensor) such. As an anisotropic magnetoresistive sensor (AMR sensor), a giant magnetoresistive sensor (GMR sensor) or tunneling magnetoresistive sensor (TMR sensor), the electrical resistance of a metal, semi-metal or semiconductor, the / in the magnetic field sensor changes 104 is contained under the influence of the magnetic field. The orientation and configuration of the magnetic field sensor 104 may vary according to the type of sensor device used. In any case, the height of the signal generated by the magnetic field sensor 104 generates a monotonically dependent response to the amount of current flowing in the current path of the semiconductor chip 102 flows. So can the current flow through the semiconductor chip 102 and the temperature within the assembly can be measured simultaneously.

For example, in the case of a power MOSFET chip, current flow through the source or drain of the power MOSFET may be accomplished by positioning the magnetic field sensor 104 be accurately measured in close proximity to the source or drain current path of the device. In the case of an IGBT chip, the current flow through the Emitter or collector of the IGBT by positioning the magnetic field sensor 104 be accurately measured in close proximity to the emitter or collector current path of the device. In the case of a power diode chip, the current flow through the anode or cathode of the power diode may be determined by positioning the magnetic field sensor 104 be accurately measured in close proximity to the anode or cathode current path of the device. Even if the signal generated by the magnetic field sensor 104 is generated, is nonlinear, it can be corrected, for. B. with a microcontroller.

In some applications, the magnetic field sensor 104 be supplied with a significantly lower voltage or carry signals at a significantly lower voltage (eg, 5 V) compared to the semiconductor chip 102 (eg 500 V, 1000 V or even higher). For these applications, the magnetic field sensor 104 from the metal clamp 106 and therefore from the semiconductor chip 102 be galvanically isolated. In one embodiment, the magnetic field sensor is 104 from the metal clamp 106 through a spacer 108 spaced. The spacer 108 may be electrically conductive or electrically insulating. For example, the spacer 108 a conductive adhesive, sintered material, solder, etc. for applications in the low to medium voltage range (eg up to 500 V). In another example, the material of the spacer 108 be chosen so as to provide galvanic isolation. A conductive adhesive can be used as the spacer 108 be used in the case when the terminal voltage and the microcontroller have no voltage difference or the voltage spikes on the terminal 106 are blocked by other components. Otherwise, the spacer sets 108 galvanic isolation z. B. with non-conductive adhesive ready. The thickness of the adhesive affects the response of the magnetic field sensor 104 and the level of galvanic isolation. Spacer material and dimensions may be selected to optimize the smallest detected current, largest detected current, and level of galvanic isolation.

The thickness of the spacer 108 can be chosen so that the strength of the magnetic field, which in the magnetic field sensor 104 is reduced to a non-destructive level. A relatively thick spacer is particularly advantageous for high current applications. In one embodiment, the spacer is 108 a semiconductor chip such. As a silicon chip, between the magnetic field sensor 104 and the metal clamp 106 is inserted. In other embodiments, the spacer may be 108 a polymer, ceramic, non-conductive adhesive, non-conductive foil, or any other single or multi-layered material containing the magnetic field sensor 104 from the metal clamp 106 separates. Alternatively, the magnetic field sensor 104 directly on the metal clamp 106 be appropriate, for. B. by soldering, if the sensor 104 has a solderable back, or by an electrically non-conductive adhesive.

Electrical connections to the magnetic field sensor can be made by electrical conductors 110 such as As wire bonds, wire bands, etc., at one end to the magnetic field sensor 104 and at the opposite end on one or more of the conduits 100 the assembly are mounted. An additional electrical conductor 112 connects a separate contact point 114 on top of the semiconductor chip 102 electrically with a corresponding line 100-2 the assembly, z. B. to form a gate connection for a transistor chip. The metal clamp 106 For example, in the case of a power transistor, the drain (MOSFET) or collector (IGBT) connection may provide in the case of a power transistor or the anode or cathode connection in the case of a power diode. An electrical connection to the back of the semiconductor chip 102 is through the line 100-1 the assembly attached to this side of the chip 102 attached, provided. This electrical connection may be the source (MOSFET) or emitter (IGBT) connection in the case of a power transistor or the cathode or anode connection in the case of a power diode.

The semiconductor package may be cast or encapsulated with a non-conductive material 117 such as As a casting, an adhesive, silicone, silicone gel, etc. The non-conductive material 117 is in 1A not shown for simplicity of illustration. In addition to the reliability provided by such a casting / encapsulant 117 provided provide the dielectric properties of the casting / encapsulant 117 also good electrical insulation between the sensor 104 which operates at a relatively low voltage (eg, 5V) and the semiconductor chip 102 that is operating at a relatively high voltage (eg several hundred or one thousand volts).

2 FIG. 12 illustrates a top-down plan view of a second embodiment of the semiconductor device 2 The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, are other passive components 118 such as B. resistors and / or capacitors, which comprise a part of the sensing circuit, the magnetic field sensor 104 contains, also in the same assembly as the sensor 104 and the semiconductor chip 102 integrated. The passive components 118 are on different lines 100 connected to the module. Electric conductors 110 such as B. wire bonds, wire bands, etc. connect the passive components 118 with the magnetic field sensor 104 electric.

3 FIG. 12 illustrates a top-down plan view of a third embodiment of the semiconductor package 3 The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, is a logic device 120 for controlling the magnetic field sensor 104 on the same metal clamp 106 attached, on which the sensor 104 is arranged. Any standard logic device such. A microcontroller, ASIC (application specific integrated circuit), etc. used to control the operation of the magnetic field sensor 104 can be used. Electric conductors 110 such as As wire bonds, wire bands, etc. connect the logic device 120 with one or more leads of the assembly electrically to make electrical connections to the logic device 120 provide. Additional electrical conductors 122 such as As wire bonds, wire bands, etc. connect the logic device 120 electrically with the magnetic field sensor 104 ,

4 FIG. 12 illustrates a top-down plan view of a fourth embodiment of the semiconductor device 4 The embodiment shown is similar to that in FIG 3 shown embodiment. In contrast, however, are other passive components 118 such as B. resistors and / or capacitors, which comprise a part of the sensing circuit, the logic device 120 and the magnetic field sensor 104 contains, even in the same assembly as the sensor 104 , the logic device 120 and the semiconductor chip 102 integrated. The passive components 118 are on different lines 100 connected to the module. Electric conductors 110 such as As wire bonds, wire bands, etc. connect the passive components 118 electrically with the logic device 120 and / or the magnetic field sensor 104 , So are the passive components 118 with the magnetic field sensor 104 and the logic device 120 electrically connected to form the desired sensing circuit.

5 FIG. 12 illustrates a top-down plan view of a fifth embodiment of the semiconductor device 5 The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, the metal clamp 106 a tapered area 124 on, for which the width of the metal clamp 106 to less than or equal to the width of the magnetic field sensor 104 is reduced and the sensor 104 over the tapered area 124 is positioned. The tapered area 124 is between the wider opposite end areas 126 . 128 the metal clamp 106 inserted. The section of the tapered area 124 under the magnetic field sensor 104 is arranged and has a narrower width than the sensor 104 , is in 5 shown in dashed lines, as this part of the tapered region 124 through the magnetic field sensor 104 covered and therefore not visible.

6 FIG. 12 illustrates a top-down plan view of a sixth embodiment of the semiconductor device 6 The embodiment shown is similar to that in FIG 5 shown embodiment. In contrast, the metal clamp contains 106 furthermore lateral branches 130 . 132 extending parallel to the tapered area 124 between the opposite end regions 126 . 128 extend. The lateral branches 130 . 132 are from the tapered area 124 spaced apart and not from the magnetic field sensor 104 covered. Adding the side branches 130 . 132 allows the metal clamp 106 handle more current than the terminal configuration used in 5 is shown. However, more additional calibration effort and offset values may be needed because not the entire current path under the magnetic field sensor 104 runs. Thus, the magnetic field represented by the magnetic field sensor 104 not all of the current flowing through the path, but instead only the portion of the current under the sensor 104 flows.

7 FIG. 12 illustrates a top-down plan view of a seventh embodiment of the semiconductor device 7 The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, is the magnetic field sensor 104 on a wire 100-3 the assembly arranged by the line 100-1 is different, on which the semiconductor chip 102 is appropriate. The administration 100-3 on which the magnetic field sensor 104 is arranged, provides an electrical connection with the semiconductor chip 102 through one or more electrical conductors 134 such as As wire bonds, wire bands, etc., ready. One or more of these electrical conductors 134 are between the semiconductor chip 102 and the magnetic field sensor 104 inserted. The magnetic field sensor 104 operates to sense the magnetic field produced by the current flowing in the current path through the line 100-3 on which the magnetic field sensor 104 is arranged, and every electrical conductor 134 who with this lead 100-3 is connected and between the semiconductor chip 102 and the magnetic field sensor 104 is inserted, flows.

8th FIG. 12 illustrates a top-down plan view of an eighth embodiment of the semiconductor device 8th The embodiment shown is similar to that in FIG 7 shown embodiment. In contrast, however, is the electrical connection between the line 100-3 on which the magnetic field sensor 104 is arranged, and the semiconductor chip 102 through a metal clamp 106 instead of the wire bonds or bands provided. The magnetic field sensor 104 works to sense the magnetic field produced by the current flowing in the current path through the wire 100-3 on which the magnetic field sensor 104 is arranged, and the metal clamp 106 that this line 100-3 with the semiconductor chip 102 connects, flows.

9A FIG. 12 illustrates a top-down plan view of a ninth embodiment of the semiconductor device, and FIG 9B provides a cross-sectional view of the assembly along the line marked BB 'in FIG 9A The in 9A and 9B The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, is the magnetic field sensor 104 under a metal clamp 106 arranged, which is one of the lines 100-3 the module with the semiconductor chip 102 connects electrically. The magnetic field sensor 104 is in 9A shown as a dashed box because of the sensor 104 in this view through the metal clamp 106 is covered. One or more of the lines 100 of the assembly extend under the metal clamp 106 to make electrical connections at the back 103 of the magnetic field sensor 104 provide. Mechanical contact between the top 105 of the magnetic field sensor 104 and the overlying metal clamp 106 is not necessary because of the sensor 104 through one or more of the underlying pipe (s) 100 the assembly is worn. The top 105 of the magnetic field sensor 104 can from the overlying metal clamp 106 be galvanically isolated, for. B. by an air gap 136 , Additionally or alternatively, a spacer (in 9B not shown) the magnetic field sensor 104 from the metal clamp 106 disconnect, such as In 1B shown. For example, the gap 136 with a kind of polymer such. As casting material, non-conductive adhesive or non-conductive foil / tape to be filled. Alternatively, a conductive material may be the gap 136 between the sensor 104 and the overlying metal clamp 106 in the case of low voltage devices. Different to 1B would be the spacer between the top 105 of the magnetic field sensor 104 and the overlying metal clamp 106 inserted.

10 FIG. 12 illustrates a top-down plan view of a tenth embodiment of the semiconductor device 10 The embodiment shown is similar to that in FIG 7 shown embodiment. In contrast, however, the magnetic field sensor 104 an opening 138 on, passing through the sensor 104 extends. Various semiconductor technologies readily allow the formation of such an opening 138 , z. By masking and chemical etching processes, laser drilling processes, etc., and therefore no further explanation is provided in this regard. At least one electrical conductor 134-1 is on the line 100-3 on which the magnetic field sensor 104 is arranged through the opening 138 in the sensor 104 appropriate. The other end of this line 134-1 is on the semiconductor chip 102 attached to complete the corresponding electrical connection. The magnetic field sensor 104 operates to sense the magnetic field produced by current flowing in the current path through the line 100-3 on which the magnetic field sensor 104 is arranged, and the electrical conductor 134-1 who is on this line 100-3 through the opening 138 in the magnetic field sensor 104 is attached, flows.

11A FIG. 12 illustrates a top-down plan view of an eleventh embodiment of the semiconductor device, and FIG 11B provides a cross-sectional view of the assembly along the CC 'marked line in 11A The in 11A and 11B The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, is the magnetic field sensor 104 in the same chip 102 like the power semiconductor device (s) 140 embedded. The chip 102 contains a semiconductor body 140 containing Si or a compound semiconductor such as. SiC, GaAs, GaN, etc. The performance device (s) 138 are in the semiconductor body 140 educated. The magnetic field sensor 104 is in the same semiconductor body 140 like the performance device (s) 138 but arranged by the power device (s) 138 galvanically isolated. The galvanic isolation can be in the semiconductor body 140 or as part of a bond line with the underlying line 100-1 be integrated in the assembly. In any case, the current flow path into the power device (s) 138 and from the power device (s) 138 to a PCB, a ceramic substrate, etc. (not shown) in FIG 11B represented by a series of arrows. As in 11B As shown, some current spreads under the magnetic field sensor 104 in the pipe 100-1 from where the chip 102 is appropriate. The magnetic field produced by the current flowing in this part of the pipe 100-1 flows through the integrated magnetic field sensor 104 sensed. The height of the corresponding signal through the sensor 104 is proportional to the amount of current flowing in this part of the current path. The metal clamp 106 , in the 11A can be shown by another type of electrical conductor such. As wire bonds, wire bands, etc. be replaced.

12 FIG. 12 illustrates a top-down plan view of a twelfth embodiment of the semiconductor device 12 The embodiment shown is similar to that in FIG 7 shown embodiment. In contrast to this is the magnetic field sensor 104 however on a third line 100-10 arranged. A first group 144 from one or more electrical conductors such. B. wire bonds, wire bands, etc., each has a first end connected to a second line 100-3 is attached, and a second end, attached to the third line 100-10 is attached, on. A second group 146 from one or more electrical conductors such. As wire bonds, wire bands, etc., each has a first end, which on the third line 100-10 is mounted, and a second end attached to the semiconductor chip 102 attached to a first line 100-1 is attached, on. The magnetic field sensor 104 is between the first group 144 and the second group 146 inserted from one or more electrical conductors and senses the magnetic field produced by the current coming from the first group 144 from one or more electrical conductors to the second group 146 from one or more electrical conductors through the third conduit 100-10 flows.

13A FIG. 12 illustrates a top-down plan view of a thirteenth embodiment of the semiconductor device, and FIG 13B FIG. 12 illustrates a cross-sectional view of the assembly along the line labeled DD 'in FIG 13A The in 13A and 13B The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, is the magnetic field sensor 104 on the semiconductor chip 102 instead of the metal clamp 106 that the appropriate line 100-3 the module with the semiconductor chip 102 electrically connects, arranged. The magnetic field sensor 104 is from the semiconductor chip 102 galvanically isolated. In one embodiment, a spacer separates 108 the magnetic field sensor 104 from the semiconductor chip 102 , The spacer 108 can provide both galvanic isolation and magnetic field reduction on the sensor 104 provide as described hereinabove.

The embodiments described above position the magnetic field sensor such that the magnetic field strength of interest is measured in only one direction. With such a sensor configuration, additional signal processing must be performed in order to reduce the influence of stray magnetic fields such. B. of the earth's magnetic field to suppress the measurement results. Accordingly, current sense information derived from the sensor output may include contributions due to stray magnetic fields striking the magnetic field sensor, making the current sense information less accurate, if not further processed, to cancel these contributions. The embodiments described below use a differential measurement method, wherein the magnetic field sensor comprises at least two magnetic field sensor components positioned so that the magnetic field of interest strikes the magnetic field sensor components in different directions, making it possible to reduce the influence of the stray magnetic field such as e.g. B. the earth's magnetic field easier to suppress the measurement results.

The magnitude of the signal generated by each magnetic field sensor component is proportional to the amount of current flowing in the current path and indicates the power consumption of the semiconductor chip and / or the temperature of the assembly. For example, in the case of a Hall sensor, at least two transducers may be positioned so that the magnetic field of interest (vertically) strikes the transducers in different vertical directions. Each transducer varies its output voltage in response to the magnetic field. In the case of magnetoresistive sensor components (XMR sensor components) such as. Anisotropic magnetoresistive (AMR) sensor components, giant magnetoresistive sensor (GMR) sensor components, or tunneling magnetoresistive (TMR) sensor components, the electrical resistance of a metal, semi-metal, or semiconductor contained in the XMR magnetic field sensor components changes the influence of the magnetic field that strikes (laterally) the XMR sensor components in different lateral directions.

The orientation and configuration of the magnetic field sensor components may vary according to the type of magnetic field sensor employed. For example, the magnetic field sensor components may be one-dimensional XMR or Hall devices, measuring only the magnetic field strength, or may be three-dimensional devices that also output an electrical signal that is proportional to a distance between the current path and the three-dimensional magnetic field sensing component. In any case, the magnitude of the signal generated by each magnetic field sensor component is proportional to the amount of current flowing in the current path of the semiconductor chip. However, the magnetic field sensor components are positioned so that the magnetic field of interest strikes the magnetic field sensor components in different directions, which allows the influence of stray magnetic fields such. B. of the earth field is suppressed, z. By using the difference of the electrical signal outputs of the sensor component. Thus, the current flow through the semiconductor chip and the temperature within the assembly can be measured more accurately.

14A FIG. 12 illustrates a top-down plan view of a fourteenth embodiment of the semiconductor device, and FIG 14B FIG. 12 illustrates a cross-sectional view of the assembly along the line labeled EE 'in FIG 14A The in 14A and 14B The embodiment shown is similar to that in FIGS 1A and 1B shown embodiment. In contrast, however, includes the magnetic field sensor 104 a first magnetic field sensing component 104a and a second magnetic field sensing component 104b , The second magnetic field sensing component 104b is through the metal clamp 106 covered and therefore in 14A not to be seen.

The first magnetic field sensing component 104a is adjacent to the top of the metal clamp 106 and galvanically isolated from the current path. The second magnetic field sensing component 104b is adjacent to the bottom of the metal clamp 106 and also galvanically isolated from the current path. The first and second magnetic field sensing components 104a . 104b of the magnetic field sensor 104 are arranged according to this embodiment in separate semiconductor chips, because the sensor components 104a . 104b adjacent opposite sides of the same metal clamp 106 are. In one embodiment, a spacer separates 108a . 108b each magnetic field sensor component 104a . 104b from the metal clamp 106 , The spacer 108 can provide both galvanic isolation and magnetic field reduction on each sensor component 104a . 104b provide as described hereinabove. The metal clamp 106 connects a line 100-3 the semiconductor device having a terminal (eg, emitter or source terminal) of the semiconductor chip 102 ,

With the in 14A and 14B The sensor component configuration shown is the first magnetic field sensing component 104a positioned so that the magnetic field produced by current flowing through the current path is applied to the first magnetic field sensing component 104a in a first direction. The second magnetic field sensing component 104b is positioned so that the magnetic field on the second magnetic field sensing component 104b in a second direction, different from the first direction. The current path is in 14B represented by arrows.

Electricity enters the pipe 100-3 a, goes through the metal clamp 106 from right to left, enters the semiconductor chip 102 and exits the assembly through line 100-1 out.

14B represents a few vectors of the resulting magnetic field, which is in the plane above the metal clamp 106 enters, through the symbol ⊗ and a few vectors of the magnetic field coming from the plane below the metal clamp 106 Thus, the magnetic field of interest, that is, the magnetic field produced by the current flowing in the current path, in opposite directions, strikes the first and second magnetic field sensing components in this embodiment 104a . 104b ,

The magnetic field sensor 104 produces an electrical signal that is proportional to the sensed magnetic field. The electrical signal comprises a first signal component generated by the first magnetic field sensing component 104a and a second signal component output by the second magnetic field sensing component. The difference of the electrical signals generated by the magnetic field sensing components 104a . 104b are output, suppresses (in this case off) the influence of stray magnetic fields, because all stray magnetic fields applied to the magnetic field sensing components 104a . 104b meet in the same direction with the in the 14A and 14B do sensor component configuration shown. The magnetic field of interest strikes the magnetic field sensing components 104a . 104b with the in the 14A and 14B 4, and therefore the measured strength of the magnetic field of interest is constructively combined to give an accurate estimate of the current flowing in the current path without being affected by stray magnetic fields.

15A represents vectors of a magnetic field produced by current flowing through a metal clamp 200 flows, which is a first section 202 and a second section 204 which are spaced apart and extend parallel to each other as part of the current path. A third section 206 extends perpendicularly between the first and the second section 202 . 204 and connects the first section 202 with the second section 204 , The ends 208 . 210 of the first and second sections 202 . 204 are not physically connected. Electricity in the metal clamp 200 flows, comes to an end 208 and enters at the other end 210 out. The current flows in the opposite direction in the first section 202 compared to the second section 204 , As a result, the magnetic field produced by the current propagates in the metal terminal 200 flows outward from the first section 202 in the opposite direction compared to the second section 204 out.

15B represents a sectional view of the metal clamp 200 , in the 15A is shown along the line marked AA. Current flows in one direction in the first section 202 the metal clamp 200 as indicated by symbol ⊗ in 15B is represented and flows in the opposite direction in the second section 204 the metal clamp 200 as indicated by symbol ⊙ in 158 is represented. In 158 In addition, a magnetic stray field is shown on each section 202 . 204 the metal clamp 200 in the same direction. 158 also shows a first vector 212 . 212 ' which is the magnetic field of interest represents a second vector 214 . 214 ' representing the stray magnetic field and a third vector 216 . 216 ' representing the combination of the first and second vectors measured for the first and second sections 202 . 204 the metal clamp 200 , The influence of the stray magnetic field on the sensing result is in 15B clearly visible. The influence of the stray magnetic field can be suppressed by employing a differential measuring method wherein a first magnetic field sensing component 104a in close proximity to the first section 202 the metal clamp 200 is placed and a second magnetic field sensing component 104b in close proximity to the second section 204 the metal clamp 200 is placed. By using the difference of the outputs of the sensor components (X1-X2), the influence of the homogeneous stray magnetic field is eliminated as in the lower part of FIG 15B is specified.

16A FIG. 12 illustrates a top-down plan view of a fifteenth embodiment of the semiconductor device, and FIG 16B FIG. 12 illustrates an exploded view of the area contained in the dashed box shown in FIG 16A is shown. In the 16A and 16B The embodiment shown is similar to that in FIGS 14A and 14B shown embodiment. In contrast, however, are the first and the second magnetic field sensing component 104a . 104b of the magnetic field sensor 104 in the same sensor chip 300 integrated and therefore fastened in the same plane. The sensor chip 300 is on different lines / metal terminals 100-3 . 100-4 / 106 attached to the semiconductor device. The first wire / metal clamp 100-3 is connected to a first terminal (eg, collector or drain) of the semiconductor chip 102 electrically connected, and the second metal terminal 100-3 is connected to a second terminal (eg emitter or source) of the second semiconductor chip 102 electrically connected. Current flowing in the current path passes through another direction along the first lead / metal terminal 100-4 / 106 as along the second wire / metal clamp 100-3 , The first magnetic field sensing component 104a is adjacent to the first lead / metal terminal 100-9 / 106 , and the second magnetic field sensing component 104b is adjacent to the second line / metal terminal 100-3 , Electricity flowing into the semiconductor chip 102 enters, passes through the first line / metal terminal 100-4 / 106 in a first direction. Power coming out of the semiconductor chip 102 exits, passes through the second line / metal terminal 100-3 in the opposite direction. As a result, the magnetic field produced by current flowing in the current path hits the first magnetic field sensing component 104a in the opposite direction as the magnetic field sensing component 104a ,

17 FIG. 12 illustrates a top-down plan view of a sixteenth embodiment of the semiconductor device 17 The embodiment shown is similar to that in FIGS 16A and 16B shown embodiment. In contrast, the sensor chip is the first and the second magnetic field sensing components 104a . 104b contains, on the same line / metal terminal 100-4 / 106 appropriate. The wire / metal clamp 100-4 / 106 is connected to a terminal (eg emitter or source) of the semiconductor chip 102 electrically connected. The wire / metal clamp 100-4 / 106 includes a first section 400 and a second section 402 , which are spaced apart and extend parallel to each other, as part of the current path. A third section 404 the wire / metal clamp 100-4 / 106 extends perpendicularly between the first and the second section 400 . 402 and connects the first section 400 with the second section 402 , The ends of the first and second sections 400 . 402 are not physically connected. Current flowing in the current path passes through another direction along the first section 400 the wire / metal clamp 100-4 / 106 as along the second section 402 the wire / metal clamp 100-4 / 106 , such as As here above in connection with 15A and 15B described. The first magnetic field sensing component 104a is adjacent to the first section 400 the wire / metal clamp 100-4 / 106 , and the second magnetic field sensing component 104b is adjacent to the second section 402 the wire / metal clamp 100-4 / 106 , In this way, electricity meets that in the pipe / metal clamp 100-4 / 106 flows to the first magnetic field sensing component 104a in the opposite direction as the second magnetic field sensing component 104b so that stray field contributions are canceled out by the differential sensing method described herein.

In an embodiment, the first section extends 400 the wire / metal clamp 100-4 / 106 over the base of the semiconductor chip 102 and the first magnetic field sensing component 104a is adjacent to the first section 400 outside the base of the semiconductor chip 102 , The second magnetic field sensing component 104b is adjacent to the second section 402 within the footprint of the semiconductor chip 102 ,

18 FIG. 12 illustrates a top-down plan view of a seventeenth embodiment of the semiconductor device 18 The embodiment shown is similar to that in FIG 17 shown embodiment. In contrast, however, extends the second section 402 the wire / metal clamp 100-4 / 106 also over the base area of the semiconductor chip 102 out. In this way, both are magnetic field sensing components 104a . 104b adjacent to each section 400 . 402 the line / metal clamp 100-4 / 106 outside the base of the semiconductor chip 102 , With this configuration, disturbances in the current flowing in the semiconductor chip 102 flows, less effect on the magnetic field caused by the magnetic field sensing components 104a . 104b of the magnetic field sensor 104 is sensed because the magnetic field sensing components 104a . 104b not above or below the semiconductor chip 102 but instead offset laterally from the chip 102 are positioned in the vertical direction.

In one embodiment, the semiconductor chip includes 102 a power transistor controlled by a switching signal applied to the gate 116 of the power transistor is applied. The switching signal controls the switching of the power transistor during which disturbances occur in the current flowing through the power transistor. A difference signal, that of the difference between the electrical signals generated by the magnetic field sensing components 104a . 104b of the magnetic field sensor 104 can be processed to suppress the effect of the disturbances on the measured magnetic field based on timing information associated with the switching signal. For example, the switching signal may be a PWM (Pulse Width Modulation) signal applied to the gate 116 of the power transistor is applied. In this example, the timing information corresponds to the duty cycle and / or the frequency of the PWM signal. A control unit (not shown) providing the PWM signal knows the duty cycle and the frequency of the PWM signal. Thus, the control unit knows when the power transistor is turned on, is turned off, and how long the power transistor remains turned on or off. Based on this timing information, the controller knows when disturbances are occurring in the current flowing through the power transistor and can process the difference signal to determine the influence of these disturbances on the measurement results obtained by the sensor components 104a . 104b be produced, remove or at least reduce, for. By ignoring, filtering, etc. the difference signal during known disturbance periods.

19A FIG. 12 illustrates a perspective view of an eighteenth embodiment of the semiconductor device; and FIG 19B represents a top view with more details in 19A shown assembly. The in 19A and 19B The embodiment shown is similar to that in FIGS 16A and 16B shown embodiment. In contrast to this is the magnetic field sensor 104 however, mounted on the outside of the assembly on the live connections to sense the magnetic field. The semiconductor device may be, for example, a transistor-sized (TO) package or another type of standard semiconductor package including a first lead 3 connected to a first terminal (eg, emitter or source) of the semiconductor chip 102 is electrically connected, a second line 2 connected to a second terminal (eg collector or drain) of the semiconductor chip 102 is electrically connected, a third line 1 connected to a third terminal (eg gate) of the semiconductor chip 102 electrically connected, and an encapsulation 500 that the semiconductor chip 102 sheathed, has. The lines 1, 2, 3 are from the encapsulation 500 out. The first and second magnetic field sensing components 104a . 104b of the magnetic field sensor 104 are in the same sensor chip 502 integrated, and the sensor chip 502 is on the same side of at least two of the wires 1, 2, 3 outside the encapsulation 500 appropriate. The first magnetic field sensing component 104a extends along the first conduit 3, and the second magnetic field sensing component 104b extends along the second line 2. Current flowing through the current path passes through another direction along the first line 3 (eg, emitter or source line) than along the second line 2 (eg, collector line). or drain line). In the in the 19A and 19B As shown, the current flows in the opposite direction along the first and second lines 3, 2. Thus, the magnetic field produced by the current impinges into the semiconductor chip 102 along the first line 3 and out of the semiconductor chip 102 flows along the second line 2, to the first magnetic field sensing component 104a in the opposite direction as the second magnetic field sensing component 104b ,

The semiconductor device may further comprise an additional substrate 504 contained on the lines 1, 2, 3 outside the encapsulation 500 is attached, wherein the additional substrate on the opposite side of the lines 1, 2, 3 as the sensor chip 502 is appropriate. Connections of the sensor chip 502 are with the wires 506 . 508 . 510 . 512 of the additional substrate 504 electrically connected to points of the external electrical contact for accessing the electrical signals generated by the magnetic field sensing components 104 . 104b of the magnetic field sensor 104 that is in the sensor chip 502 is included, to be issued.

20 FIG. 12 illustrates a sectional view of a nineteenth embodiment of the semiconductor device 20 The embodiment shown is similar to that in FIGS 19A and 19B shown embodiment. The type of assembly is different. According to the in 20 In the embodiment shown, the semiconductor device is a surface mount assembly. The emitter / source line 100-4 the semiconductor device is encapsulated 500 on the opposite side the assembly as the collector / drain line 100-3 out. Current flowing in the current path passes through another direction along the emitter / source line 100-4 as along the collector / drain line 100-3 , The magnetic field sensing components 104a . 104b of the magnetic field sensor 104 are in separate sensor chips 600 . 602 arranged. The sensor chip 600 with the first magnetic field sensing component 104a is at the emitter / source line 100-4 attached, and the sensor chip 602 with the second magnetic field sensing component 104b is at the collector / drain line 100-3 appropriate.

The semiconductor device may further comprise an additional substrate 604 contained by the encapsulation 606 is sheathed. The same or a different encapsulation may be used to form the semiconductor chip 102 and the additional substrate 604 to coat. Connections of the separate sensor chips 600 . 602 are with leads of additional substrate 604 by electrical conductors 608 such as Wire bonds, wire bands, etc. are electrically connected to external electrical contact points for accessing the electrical signals generated by the magnetic field sensing components 104a . 104b of the magnetic field sensor 104 be issued to provide.

The in conjunction with the 14A to 20 described embodiments allow sensing of current in a semiconductor device, which includes a semiconductor chip, which is attached to a substrate, and a magnetic field sensor, which is included as part of the same semiconductor device as the semiconductor chip and is positioned in close proximity to a current path of the semiconductor chip. The current sensing method includes producing a first electrical signal by a first magnetic field sensing component galvanically isolated from the current path and positioned such that a magnetic field produced by a current flowing in the current path is applied to the first magnetic field sensing component in a first direction, wherein the electrical signal is proportional to the magnetic field. The current sensing method further includes producing a second electrical signal through a second magnetic field sensing component that is galvanically isolated from the current path and positioned so that the magnetic field meets the second magnetic field sensing component in a direction other than the first direction, the second electrical field sensing component Signal is proportional to the magnetic field. The current sensing method further includes producing a third electrical signal as the difference between the first electrical signal and the second electrical signal.

The first and second magnetic field sensing components may be positioned so that the magnetic field encounters the first magnetic field sensing component in the opposite direction as the second magnetic field sensing component, as described hereinabove. In this way, the strength of the magnetic field sensed by the first magnetic field sensing component is structurally combined with the strength of the magnetic field sensed by the second magnetic field sensing component, and any measurements of stray magnetic fields generated by the first and second magnetic fields second magnetic field sensing component are made to be extinguished from the third electrical signal produced by the current sensing method.

In some cases, the semiconductor chip may include one or more power transistors that are controlled by a switching signal that causes switching of the power transistor (s) during which disturbances in the current flowing through the power transistor (s) occur, controls. For these cases, the current sensing method may further include processing the third electrical signal to suppress the effect of the disturbances on the magnetic field based on timing information associated with the switching signal. For example, the switching signal may be a PWM signal (pulse width modulation signal), and the timing information corresponds to a duty ratio and / or a frequency of the PWM signal. Based on this information, a control unit which generates the PWM signal knows when disturbances are occurring in the current flowing through the power transistor (s) and can process the third electrical signal to determine the influence of this disturbance on the measurement results. which are produced by the magnetic field sensing components, or at least reduce, e.g. By ignoring, filtering, etc., the third electrical signal during known disturbance periods, as described hereinabove.

The above in connection with the 1 - 20 described embodiments provide the integration of the magnetic field sensor such. B. a magnetoresistive sensor (XMR sensor) or Hall sensor in a semiconductor device ready. The next in conjunction with the 21 - 37 described embodiments belong to an independent multifunctional connection module, the magnetic field sensor such. B. contains an XMR sensor or a Hall sensor for current and / or temperature measurement. The magnetic field sensor operates as described hereinabove and generates a signal in response to a magnetic field produced by current flowing in a current path of a metal terminal contained within the stand alone multifunctional interconnect module. The self-contained multifunctional connection module can contain one or more magnetic field sensing components and with galvanic insulation between the magnetic field sensor and the metal terminal or not, as described hereinbefore.

The stand-alone multifunctional interconnect module can be used to provide a direct electrical connection between components and / or metal areas of a carrier structure. As used herein, the term "carrier" refers generally to any type of substrate, package, or package to which one or more semiconductor dies and / or semiconductor die assemblies are attached or contained. For example, the term "carrier" on a circuit board such. A PCB, a ceramic substrate, a plastic module, a cast module, a lead frame, or any other type of support. In one case, a semiconductor bare chip or a semiconductor chip assembly such as. B. a cast semiconductor chip on a carrier such. A PCB, and the multifunctional interconnect module may be used to provide electrical connection between the die / chip package and a metal portion of the carrier, between the die / die assembly and another die / chip assembly (s) on the die the carrier is attached, or between two different metal areas of the carrier z. B. in a shunt configuration.

21 to 23 represent respective sectional views of three different embodiments of a self-contained multifunctional connection module 700 According to the in 21 embodiment shown comprises the multifunctional connection module 700 a metal clamp 702 that has a first end section 704 , a second end portion 706 and a middle section 708 extending between the first and second end sections 704 . 706 extends. The metal clamp 702 can have a single, continuous construction, so there are no physical boundaries or seams between the end sections 704 . 706 and the middle section 708 the metal clamp 702 available. The first end section 704 the metal clamp 702 For external mounting to a semiconductor die, or to a semiconductor die assembly mounted on such a support or attached to a metal region of the support (see FIG 21 not shown). The second end section 706 the metal clamp 702 is similar to external attachment to another metal region of the carrier or to another semiconductor die or semiconductor die assembly mounted on the carrier (also in FIG 21 not shown).

The multifunctional connection module 700 further comprises a magnetic field sensor 104 holding on to the metal clamp 702 is attached. The magnetic field sensor 104 is at the middle section 708 the metal clamp 702 at the topmost main surface in the 21 to 23 attached. In general, the magnetic field sensor 104 at any section 704 . 706 . 708 the metal clamp 702 either on the upper or lower main surface of the clamp 702 be appropriate, for. As described hereinabove, and may be on the metal clamp 702 be centered or even at the terminal 702 survive. The magnetic field sensor 104 works to sense a magnetic field produced by electricity flowing through the metal clamp 702 flows as described hereinbefore. For example, the magnetic field sensor 104 an XMR sensor, such as B. an anisotropic magnetoresistive sensor (AMR sensor), a giant magnetoresistive sensor (GMR sensor) or a tunnel magnetoresistive sensor (TMR sensor), or a Hall sensor, which generates a signal in response to the magnetic field passing through the Electricity is produced in a current path of the metal clamp 702 flows.

The magnetic field sensor 104 can on the metal clamp 702 by an electrically conductive or non-conductive material or by a spacer 710 be attached. In some applications, the magnetic field sensor 104 be supplied with a significantly lower voltage or carry signals at a significantly lower voltage (eg, 5V) compared to the semiconductor chip, which causes current through the terminal 702 flows (eg 500 V, 1000 V or even higher). For these applications, the magnetic field sensor 104 from the metal clamp 702 be galvanically isolated. In one embodiment, the magnetic field sensor is 104 from the metal clamp by a spacer 710 spaced. The spacer 710 may be electrically conductive or electrically insulating. For example, the spacer 710 a conductive adhesive, sintered material, solder, etc. for use in the low to medium voltage range (eg, up to 500V). In another example, the material of the spacer 710 be chosen so as to provide galvanic isolation. A conductive adhesive may in the case when the terminal voltage and the microcontroller for the sensor 104 have no voltage difference or the voltage spikes on the terminal 702 blocked by other components than the spacer 710 be used. Otherwise, the spacer can 710 galvanic isolation z. B. provide with non-conductive adhesive. The thickness of the adhesive affects the response of the magnetic field sensor 104 and the level of galvanic isolation. Spacer material and dimensions may be selected to optimize the lowest detected current, largest detected current, and level of galvanic isolation.

The thickness of the spacer 710 can be chosen so that the strength of the magnetic field, which in the magnetic field sensor 104 is reduced to a non-destructive level. A relatively thick spacer is particularly advantageous for high current applications. In one embodiment, the spacer is 710 a semiconductor chip such. As a silicon chip, between the magnetic field sensor 104 and the metal clamp 702 is inserted. In other embodiments, the spacer may be 710 a polymer, ceramic, non-conductive adhesive, non-conductive foil, or any other single or multi-layered material containing the magnetic field sensor 104 from the metal clamp 702 separates. Alternatively, the magnetic field sensor 104 directly on the metal clamp 702 be appropriate, for. B. by soldering, if the sensor 104 has a solderable back, or by an electrically non-conductive adhesive.

For each of these configurations is the multifunctional connection module 700 a separate component. That is, the multifunctional connection module 700 does not contain the component that causes current through the metal terminal 702 of the connection module 700 flows, ie the component, their current and / or temperature through the connection module 700 to be measured.

22 shows a second embodiment of the multifunctional connection module 700 in which the metal clamp 702 in an encapsulation 712 is embedded. Any standard encapsulation material may be used, such as As an adhesive, a molding compound, a laminate such as FR-4 or FR-5, a photoresist such. A solder mask material, glass, silicon, etc. In 22 cover the encapsulation 712 the surface 703 the metal clamp 702 at which the magnetic field sensor 104 is attached. The magnetic field sensor 104 can also be in the encapsulation 712 be embedded, as in 22 is shown. Electrical contact points 714 at the side of the magnetic field sensor 104 coming from the metal clamp 702 show away, have an exposed surface 705 on, not by the encapsulation 712 is covered, for later electrical connection with the sensor 104 to enable.

23 shows a third embodiment of the multifunctional connection module 700 in which the surface 707 of the middle section 708 the metal clamp 702 that from the magnetic field sensor 104 points away, even through the encapsulation 712 is covered. The first and second end sections 704 . 706 the metal clamp 702 each have an exposed surface 709 on, by the magnetic field sensor 104 points away and not from the encapsulation 712 is covered for later attachment to a semiconductor bare chip or a semiconductor chip assembly, to a support or to a metal portion of the carrier (in 23 not shown) is mounted.

24 represents a top view of the 21 shown embodiment of the multifunctional connection module, and 25 represents a top view of the 22 and 23 shown embodiments of the multifunctional connection module.

The 26 and 27 FIG. 4 illustrates respective plan views of embodiments of the multifunctional connection module incorporated in FIG 22 and 23 are shown, wherein the magnetic field sensor 104 works to do this in conjunction with the above 14 - 19 to implement described Differenzabfühlverfahren. According to these embodiments, the magnetic field sensor comprises 104 a first magnetic field sensing component 104a and a second magnetic field sensing component 104b , In addition, the middle section comprises 708 the metal clamp 702 a first line branch 716 and a second leg 718 that of the first leg of the line 716 is spaced. In the in 26 In the embodiment shown, the first and the second line branches 716 . 718 at no end of the clamp 702 connected. In the in 27 In the embodiment shown, the first and the second line branches 716 . 718 at one end 704 connected to the terminal. The first magnetic field sensing component 104a of the magnetic field sensor 104 is adjacent to the first leg 716 and positioned so that a magnetic field produced by current in the first leg 716 flows to the first magnetic field sensing component 104a in a first direction. The second magnetic field sensing component 104b of the magnetic field sensor 104 is adjacent to the second leg 718 and positioned so that the magnetic field is applied to the second magnetic field sensing component 104b in a second direction that is different than the first direction.

In the in the 26 and 27 As shown, the first and second directions are opposite to each other. The electrical signal generated by the magnetic field sensor 104 is produced comprises a first signal component generated by the first magnetic field sensing component 104a and a second signal component generated by the second magnetic field sensing component 104b is issued. In this way, electricity meets that in the metal clamp 702 flows to the first magnetic field sensing component 104a in the opposite direction as the second magnetic field sensing component 104b so that stray field contributions are canceled out by differential sensing as described hereinabove. The in the 26 - 27 shown magnetic field sensor 104 can by the appropriate encapsulation 712 of the multifunctional connection module 700 be covered, as in the 22 and 23 is not shown that way in the 26 - 27 shown, so that the position of the magnetic field sensing components 104a . 104b relative to the line branches 716 . 718 the metal clamp 702 are visible.

The 28 - 37 provide different embodiments for using one or more instances of the multifunctional connection module 700 in order to form a direct electrical connection between components and / or metal regions of the carrier structure.

28 FIG. 12 is a plan view of a first embodiment of a carrier structure. FIG 800 representing multiple instances of the multifunctional connection module 700 used. According to this embodiment, the support structure comprises 800 a carrier 802 such as As a circuit board, a ceramic substrate, a plastic module, a cast module, a lead frame, etc., the plurality of metal areas 804 comprising, in an electrically insulating material 806 such as As a laminate such as FR-4 or FR-5, a molding compound, a ceramic substrate, etc., are embedded or attached thereto. Semiconductor bare chips and / or semiconductor chip assemblies 808 are on different metal areas 804 of the carrier 802 appropriate. Several multifunctional connection modules 700 form direct electrical connections between the semiconductor dies / semiconductor chip assemblies 808 and / or metal areas 804 of the carrier 802 , Each connection module 700 includes a metal clamp 702 that has a first end section 704 , a second end portion 706 and a middle section 708 extending between the first and second end sections 704 . 706 extends, has. The first end section 704 is on one of the semiconductor dies / semiconductor chip assemblies 808 attached to the carrier 802 are mounted, attached. The second end section 706 is at one of the carrier metal areas 804 appropriate. In this way, each multifunctional connection module provides 700 a direct electrical connection between one / one of the semiconductor dies / semiconductor chip assemblies 808 and one of the metal areas 804 of the carrier 802 ready. These compounds are in 28 not visible.

Each connection module 700 also includes a magnetic field sensor 104 attached to the respective metal clamp 702 is attached as hereinbefore in connection with the 21 - 23 described. The metal clamps 702 the respective connection modules 700 can be in an encapsulation 712 embedded, also as above in connection with the 22 and 23 described. One or more of the semiconductor dies / semiconductor chip assemblies 808 attached to the carrier 802 can be powered or carry signals at a significantly higher voltage (eg 500V, 1000V or even higher) than the adjacent magnetic field sensor 104 (eg 5V). For these applications, galvanic isolation between the magnetic field sensor 104 and the corresponding metal clamp 702 provided as described hereinabove.

29A Fig. 10 is a plan view of a second embodiment of the carrier structure 800 represents the version of the multifunctional connection module 700 used in 21 is shown, and 29B shows a sectional view of the carrier structure 800 along the line marked FF 'in 29A In this embodiment, a plurality of electrical conductors connect 810 such as As wire bonds, wire bands, etc. different from the metal areas 804 of the carrier 802 with electrical contact points 714 on one side of the magnetic field sensor 104 of the multifunctional connection module 700 coming from the metal clamp 702 this module 700 points away, are arranged. These connections allow signals from the magnetic field sensor 104 to the carrier 802 be guided. A spacer bolt 812 such as For example, a metal block may be used to create any gap between the second end portion 706 the metal clamp 702 and the carrier 802 which consists of attaching the first end portion 704 on one of the semiconductor dies / semiconductor chip assemblies 808 results, adapt. Alternatively, the gap may be made by making the second end portion 706 the metal clamp 702 thicker (higher) than the first end section 704 be adjusted.

29C represents the same sectional view of the support structure 800 along the line marked FF 'in 29A but with the in 22 shown version of the multifunctional connection module 700 ,

29D also provides the same sectional view of the support structure 800 along the line marked FF 'in 29A but with the in 23 shown version of the multifunctional connection module 700 ,

30 Fig. 10 is a plan view of a third embodiment of the carrier structure 800 represents the multifunctional connection module 700 used. In the 30 The embodiment shown is similar to that in FIG 29A shown embodiment. In contrast, however, includes the connection module 700 a metallic redistribution layer 720 that in the same encapsulation 712 like the metal clamp 702 embedded and from the metal clamp 702 is disconnected. The metallic redistribution layer 720 can with contact points of the magnetic field sensor 104 that are on the front (which are not shown) and / or back (which are not visible) of the sensor 104 are arranged to be electrically connected. The top of the metal clamp 702 and the magnetic field sensor 104 can through the encapsulation 712 be covered, as in the 22 and 23 shown are in 30 However, not shown in this way, so that the position of the magnetic field sensor 104 and the metal clamp 702 relative to the metallic redistribution layer 720 is visible. Several electrical conductors 810 such as B. wire bonds, wire bands, etc. connect different of the metal areas 804 of the carrier 802 with the metallic redistribution layer 720 of the connection module 700 ,

31 Fig. 10 is a plan view of a fourth embodiment of the carrier structure 800 represents the multifunctional connection module 700 used. In the 31 The embodiment shown is similar to that in FIG 30 shown embodiment. In contrast, however, includes the connection module 700 a logic device 722 attached to the metal clamp 702 is attached and works to the magnetic field sensor 104 to control. The metal clamp 702 , the magnetic field sensor 104 and the logic device 722 can through the encapsulation 712 be covered, however, are in 31 not shown in this way, so the position of the magnetic field sensor 104 , the metal clamp 702 and the logic device 722 relative to the metallic redistribution layer 720 is visible. Several electrical conductors 810 such as B. wire bonds, wire bands, etc. connect different from the metal areas 804 of the carrier 802 with the metallic redistribution layer 720 of the connection module 700 , and more electrical conductors 814 can for direct electrical connection of the logic device 722 and / or the magnetic field sensor 104 with metal areas 804 of the carrier 802 and / or the metallic redistribution layer 720 be provided.

32 Fig. 10 is a plan view of a fifth embodiment of the support structure 800 represents the multifunctional connection module 700 used. In the 32 The embodiment shown is similar to that in FIG 31 shown embodiment. In contrast, however, includes the connection module 700 further one or more passive devices 724 such as As capacitors, resistors, etc., on the metallic redistribution layer 720 of the multifunctional connection module 700 are attached. The metal clamp 702 , the magnetic field sensor 104 , the logic device 722 and the passive devices 724 can through the encapsulation 712 be covered, however, are in 32 not shown in this way, so the position of the magnetic field sensor 104 , the metal clamp 702 , the logic device 722 and the passive devices 724 relative to the metallic redistribution layer 720 is visible.

33 FIG. 12 is a plan view of a sixth embodiment of the support structure. FIG 800 that the in 27 shown version of the multifunctional connection module 700 used. According to this embodiment, the middle section comprises 708 the metal clamp 702 of the connection module 700 a first line branch 716 and a second leg 718 that of the first leg of the line 716 is spaced. The magnetic field sensor 104 includes a first magnetic field sensing component 104a adjacent the first leg 716 the metal clamp 702 and positioned so that a magnetic field produced by current in the first leg 716 flows to the first magnetic field sensing component 104a in a first direction, and a second magnetic field sensing component 104b adjacent the second leg 718 the metal clamp 702 and so positioned the magnetic field on the second magnetic field sensing component 104b in a second direction that is different than the first direction. The main current flowing between the semiconductor bare chip / semiconductor chip assembly 808 and the corresponding carrier metal area 804 is guided, flows through the metal clamp 702 of the multifunctional connection module 700 and changes the direction along the length of the metal clamp 702 , so that stray field contributions by difference sensing, in the magnetic field sensor 104 is implemented, as described hereinabove.

34 Fig. 10 is a plan view of a seventh embodiment of the carrier structure 800 that the in 26 shown version of the multifunctional connection module 700 used. According to this embodiment, the semiconductor bare chip / semiconductor chip package is 808 a lateral transistor device with all power terminals on one side leading to the connection module 700 has. The middle section 708 the metal clamp 702 of the connection module 700 includes a first leg 716 and a second leg 718 that of the first leg of the line 716 is spaced. The first line branch 716 the metal clamp 702 provides a direct electrical connection between the first power port 816 at the top of the semiconductor die / semiconductor die package 808 and a metal area 804 of the carrier 802 ready. The second line branch 718 the metal clamp 702 provides a direct electrical connection between the second power port 818 at the top of the semiconductor die / semiconductor die package 808 and another metal area 804 of the carrier 802 ready. The magnetic field sensor 104 includes a first magnetic field sensing component 104a adjacent the first leg 716 the metal clamp 702 and positioned so that a magnetic field produced by current in the first leg 716 flows to the first magnetic field sensing component 104a in a first direction, and a second magnetic field sensing component 104b adjacent the second leg 718 the metal clamp 702 and positioned so that the magnetic field is applied to the second magnetic field sensing component 104b in a second direction that is different than the first direction.

35 Fig. 10 is a plan view of an eighth embodiment of the carrier structure 800 that the in 26 shown version of the multifunctional connection module 700 used. According to this embodiment, the semiconductor bare chip / semiconductor chip package is 808 a vertical transistor device having a first power port (not visible) at its bottom and a first metal region 804 of the carrier 802 attached, and a second power connection 818 on the side leading to the connection module 700 has. The middle section 708 the metal clamp 702 of the connection module 700 includes a first leg 716 and a second leg 718 that of the first leg of the line 716 is spaced. The first line branch 716 the metal clamp 702 provides a direct electrical connection between the first metal region 804 of the carrier 702 and a second metal area 804 of the carrier 802 ready. The second line branch 718 the metal clamp 702 provides a direct electrical connection between the (second) power port 818 at the top of the semiconductor die / semiconductor die package 808 and a third metal area 804 of the carrier 802 ready. The magnetic field sensor 104 includes a first magnetic field sensing component 104a adjacent the first leg 716 the metal clamp 702 and positioned so that a magnetic field produced by current in the first leg 716 flows to the first magnetic field sensing component 104a in a first direction, and a second magnetic field Abühlkomponente 104b adjacent the second leg 718 the metal clamp 702 and positioned so that the magnetic field is applied to the second magnetic field sensing component 104b in a second direction that is different than the first direction.

36 Fig. 10 is a plan view of a ninth embodiment of the carrier structure 800 who are in one of the 21 - 27 shown version of the multifunctional connection module 700 used. Although the multifunctional connection module 700 with an encapsulation 712 as shown in connection with the 22 - 23 and 25 - 27 can be shown, the encapsulation 712 be omitted, as in connection with the 21 and 24 is shown. In any case, there are at least two semiconductor dies / semiconductor chip assemblies 808 at the respective metal areas 804 of the carrier 802 appropriate. The first end section 704 the metal clamp 702 (in 36 not visible) of the connection module 700 is at a first of the semiconductor dies / semiconductor chip assemblies 808 attached, and the second end portion 706 the metal clamp 702 (also in 36 not visible) is at a / a second of the semiconductor dies / semiconductor chip packages 808 attached to a direct electrical connection between two semiconductor dies / semiconductor chip assemblies 808 via the connection module 700 provide.

37 Fig. 10 is a plan view of a tenth embodiment of the support structure 800 who are in one of the 21 - 27 shown version of the multifunctional connection module 700 used. Although the multifunctional connection module 700 again with an encapsulation 712 as shown in connection with the 22 - 23 and 25 - 27 can be shown, the encapsulation 712 be omitted, as in connection with the 21 and 24 is shown. In any case, the in 37 shown carrier structure similar to in 36 shown embodiment. In contrast, however, is the first end section 704 the metal clamp 702 (in 36 not visible) of the connection module 700 at a first metal area 804 of the carrier 802 attached, and the second end portion 706 the metal clamp 702 (in 36 also not visible) is on a second metal area 804 of the carrier 802 attached to a direct electrical connection between the two metal areas 804 of the carrier 802 provide. In some cases, the two metal areas 804 be grounded to a source connection with the corresponding semiconductor dies / semiconductor chip assemblies 808 over the respective carrier metal areas 804 provide. In these cases, the magnetic field sensor 104 of the multifunctional connection module 700 used to sense temperature and / or current.

As used herein, the terms "comprising," "including," "containing," "comprising" and the like are open-ended terms that indicate the presence of said elements or features, but do not preclude additional elements or features. The articles "a / e" and "the" should contain both the plural and the singular, unless the context clearly indicates otherwise.

It is to be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise.

Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternative and / or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. It is therefore intended that this invention be limited only by the claims and their equivalents.

Claims (25)

Connection module, comprising: a metal clip comprising a first end portion, a second end portion, and a mid portion extending between the first and second end portions, the first end portion being for external attachment to a semiconductor die or semiconductor die assembly attached to a support configured on a metal portion of the carrier, the second end portion is configured for external attachment to another metal portion of the carrier or to another semiconductor die or semiconductor die assembly mounted on the carrier; and a magnetic field sensor attached to the metal terminal, the magnetic field sensor operating to sense a magnetic field produced by current flowing through the metal terminal. A connection module according to claim 1, wherein the magnetic field sensor is galvanically isolated from the metal terminal. The connector module of claim 1 or 2, wherein the metal terminal is embedded in an encapsulant, and wherein electrical contact pads disposed on a side of the magnetic field sensor facing away from the metal terminal have an exposed surface that is not covered by the encapsulation. The connection module according to claim 3, wherein a surface of the center portion of the metal terminal facing away from the magnetic field sensor is covered by the encapsulant and wherein the first end portion and the second end portion each have an exposed surface facing away from the magnetic field sensor and that of the first Encapsulation is not covered. A connection module according to claim 3 or 4, wherein the encapsulation is an adhesive, a molding compound or a laminate. The interconnection module of any one of the preceding claims, further comprising: a metallic redistribution layer embedded in the encapsulant and separated from the metal terminal. The interconnect module of claim 1, wherein the mid portion of the metal terminal comprises a first leg and a second leg separate from the first leg, and wherein the magnetic field sensor positions a first magnetic field sensing component adjacent the first leg and such that a magnetic field produced by current flowing in the first leg, meeting the first magnetic field sensing component in a first direction, and a second magnetic field sensing component adjacent the second leg, and positioned so that the magnetic field is applied to the second magnetic field sensing component in a second direction different than the first direction is, hits, encompasses. The interconnect module of claim 7, wherein the magnetic field sensor operates to produce an electrical signal proportional to the magnetic field, and wherein the electrical signal comprises a first signal component output by the first magnetic field sensing component and a second signal component transmitted by the first magnetic field sensor first magnetic field sensing component is output. The interconnection module of any one of the preceding claims, further comprising: a logic device attached to the metal clamp and operative to control the magnetic field sensor. A connection module according to any one of the preceding claims, wherein the magnetic field sensor is attached to the metal terminal by a spacer. The interconnect module of claim 10, wherein the spacer is selected from the group consisting of: a polymer; a ceramic; Silicon; Glass; a non-conductive foil; and a slide. A connection module according to claim 10 or 11, wherein the spacer has a thickness such that the strength of the magnetic field entering the magnetic field sensor is reduced to a non-destructive level. A support structure comprising: a support comprising a plurality of metal portions embedded in or attached to an electrically insulating material; a first semiconductor die or semiconductor die assembly mounted on a first one of the metal regions of the carrier; and a first connection module, comprising: a metal clamp having a first end portion, a second end portion and a middle portion extending between the first and second end portions, the first end portion being attached to the first metal portion of the carrier or attached to the first semiconductor die or semiconductor die package, the second end portion is attached to a second metal region of the carrier or to a second semiconductor die or semiconductor die assembly mounted to the carrier; and a magnetic field sensor attached to the metal terminal, the magnetic field sensor operating to sense a magnetic field produced by current flowing through the metal terminal. A support structure according to claim 13, wherein the magnetic field sensor is galvanically isolated from the metal terminal. The support structure of claim 13 or 14, wherein the first connection module further comprises an encapsulation in which the metal terminal is embedded, and wherein electrical contact pads disposed on a side of the magnetic field sensor facing away from the metal terminal have a surface that is not covered by the encapsulation. The support structure of claim 15, wherein a surface of the center portion of the metal terminal facing away from the magnetic field sensor is covered by the encapsulant, the first end portion of the metal clamp having a surface not covered by the encapsulant and on the first metal portion of the support or attached to the first semiconductor die or semiconductor die package, and wherein the second end portion of the metal clip has a surface that is not covered by the encapsulant and attached to the second metal region of the carrier or to the second semiconductor die or semiconductor die assembly. The support structure of claim 15 or 16, wherein the first connection module further comprises a metallic redistribution layer embedded in the encapsulant and separated from the metal terminal, and wherein the support structure further comprises: a plurality of electrical conductors connecting different ones of the metal portions of the carrier to the metallic redistribution layer of the first connection module. The support structure according to claim 13, wherein the middle portion of the metal terminal of the first connection module comprises a first leg and a second leg separate from the first leg and wherein the magnetic field sensor of the first connection module positions a first magnetic field sensing component adjacent the first leg and so in that a magnetic field produced by current flowing in the first leg of the line meets the first magnetic field sensing component in a first direction, and a second magnetic field sensing component adjacent to the second leg and positioned so that the magnetic field is applied to the second magnetic field Sensing component in a second direction that is different than the first direction. The carrier assembly of claim 18, wherein the first semiconductor die or the first semiconductor die assembly is a side transistor device, wherein all of the power terminals are on a side facing the first interconnect module, wherein the first leg of the first interconnect module is a direct electrical connection between a first one of the power terminals and the second metal region of the carrier, and wherein the second line branch of the first connection module provides a direct electrical connection between a second one of the power terminals and a third one of the metal regions of the carrier. The support structure of claim 18, wherein the first semiconductor bare chip or semiconductor chip package is a vertical transistor device having a first power terminal attached to the first metal region of the carrier and a second power terminal on a side facing the first interconnect module the first line branch of the first connection module provides a direct electrical connection between the first and second metal regions of the carrier, and wherein the second line branch of the first connection module provides a direct electrical connection between the second power connection and a third one of the metal regions of the carrier. The support structure according to claim 13, wherein the first end portion of the metal terminal of the first connection module is attached to the first semiconductor bare chip or semiconductor chip package, and the second end portion of the metal terminal of the first connection module is attached to the second semiconductor bare chip or semiconductor chip package to provide a direct electrical connection between the first semiconductor die or semiconductor die assembly and the second semiconductor die or semiconductor die assembly. A support structure according to any one of claims 13 to 21, wherein the first end portion of the metal terminal of the first connection module is attached to the first metal portion of the support and the second end portion of the metal terminal of the first connection module is attached to the second metal portion of the support provide electrical connection between the first and the second metal region of the carrier. A support structure according to any one of claims 13 to 22, wherein the magnetic field sensor of the first connection module is fixed to the metal terminal by a spacer. The support structure according to any of claims 13 to 23, wherein the first end portion of the metal terminal of the first connection module is attached to the first semiconductor bare chip or semiconductor chip package, and the second end portion of the metal terminal of the first connection module is attached to the second metal region of the support to be direct provide electrical connection between the first semiconductor chip or semiconductor chip assembly and the second metal region of the carrier, and wherein the carrier assembly further comprises: a second connection module, comprising: a metal terminal having a first end portion, a second end portion, and a middle portion extending between the first and second end portions, the first end portion being attached to the second semiconductor die or semiconductor die assembly and the second end portion being attached to a third metal portion the carrier is mounted to provide a direct electrical connection between the second semiconductor bare chip or semiconductor chip assembly and the third metal region of the carrier; and a magnetic field sensor attached to the metal terminal, wherein the magnetic field sensor of the second connection module operates to sense a magnetic field produced by current flowing through the metal terminal of the second connection module. The support structure of any one of claims 13 to 24, further comprising a plurality of electrical conductors connecting different ones of the metal portions of the support with electrical contact pads disposed on a side of the magnetic field sensor facing away from the metal terminal.

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