DE102016105462A1 - Ion beam source, processing arrangement and method - Google Patents

Abstract

According to various embodiments, an ion beam source (100a, 100b, 200) may include: a cathode (202) and an anode (204) for generating ions in an elongate emission region (211, 213); and a primer sheet (110h) disposed on a surface (204a, 204b, 202o) of the anode (204) and / or the cathode (202); wherein the adhesion-promoting surface element (110h) adjoins the emission region (211, 213) and has a greater roughness than the surface (204a, 204b, 202o) and / or than 3 μm.

Description

The invention relates to an ion beam source, a processing arrangement and a method.

In general, materials or substrates, such as plate-like substrates, glass sheets, wafers, or other substrates, may be processed, processed, or pretreated by means of ions. For this purpose, a substrate can be irradiated with an ion beam, which can be generated by means of an ion beam source and directed onto a surface of a substrate to be processed. By means of the ion beam, the substrate can be etched, for example, in a so-called ion beam etching method, wherein the ions of the ion beam can atomize substrate material and thus ablate (etch) from the irradiated substrate.

For irradiating wide substrates (eg with a width of more than one meter), an ion beam source can be used, which generates an ion beam which can be extended over the entire width of the substrate (eg a so-called anode layer ion beam source can be used). , Clearly, conventional ion beam sources for processing broad substrates can be designed to irradiate large surfaces in a time-efficient manner.

In the case of ion beam etching, a parasitic coating of the ion beam source may occur, with material removed from the substrate and / or the ion beam source being able to deposit on the ion beam source. The deposited material (parasitic coating) may peel off with increasing thickness, thereby impairing the operation of the ion beam source, e.g. due to short circuits or flashovers. Thus, to enable trouble-free operation, it may be necessary to frequently clean the ion beam source, which causes additional costs (e.g., due to breaks in production during cleaning).

Conventionally, the surfaces of the ion beam source which are exposed to the parasitic coating are either not specially treated or roughened by means of a blasting medium (particle irradiation), which increases the adhesion to the parasitic coating and thus delays their detachment. Although intensive particle irradiation can indeed provide high roughness and high adhesion mediation, but at the same time lead to deformation of the irradiated components, in particular even if the treatment takes place only on one side. If the components are spared, i. Less intense particle irradiation, however, the adhesion can be improved only slightly. Since deformation of the components of the ion beam source is difficult to reverse, conventionally, the lower adhesion is accepted. The deformation can be problematic since the components are e.g. an anode layer ion source should be high in accuracy (i.e., dimensionally very tightly tolerated). Nevertheless, even gentle particle irradiation for cleaning and subsequent roughening of the ion beam source, often used, can gradually damage the components of the ion beam source.

Illustratively, in accordance with various embodiments, an ion beam source, a processing assembly, and a method are provided that enhance adhesion promotion. Illustratively, the surfaces of the ion beam source which are exposed to a parasitic coating (e.g., the surfaces facing the processing area) are covered with a primer (e.g., including or formed from an adhesion-promoting layer), e.g. coated. The primer advantageously increases the roughness of the ion beam source, resulting in improved adhesion, and can be gently applied to the components of the ion beam source, i. without deforming them. Furthermore, the primer element itself can be particle-blasted and / or renewed without damaging the components of the ion beam source.

According to various embodiments, the coating is carried out using solid particles and / or by means of a thermal spraying process (e.g., thermally treated), e.g. Solid particles distributed on the surface to be coated. The solid particles are clearly deposited on the surface of the ion beam source to be coated, thereby increasing their roughness. Optionally, the solid particles can be at least partially melted by a plasma and / or activated (can also be referred to as plasma spraying), which increases their adhesion to the surface to be coated of the ion beam source.

According to various embodiments, an ion beam source may include: a cathode and an anode for generating ions in an elongated emission region; and a primer sheet (eg, comprising or formed from a primer layer) disposed on a surface (surface to be covered) of the anode and / or the cathode; wherein the adhesion-promoting surface element adjoins the emission region and has a roughness greater than the surface and / or than 3 μm (eg an arithmetic mean roughness or R _a value, eg spatially averaged).

The arithmetic mean roughness can after DIN EN ISO 4287: 2010 be understood in a standardized way.

Optionally, the cathode and / or the anode can be roughened. Then, the surface may have a roughness greater than 3 microns.

Roughness caused by particle irradiation (e.g., sandblasting or glass bead blasting) can be e.g. limited to less than 3 μm, e.g. if the particle irradiation should not deform the cathode and / or anode and / or the treated material is not too soft (e.g., stainless steel).

According to various embodiments, the primer surface element (e.g., comprising or formed from the primer layer) may have more than about twice the roughness (e.g., a center-line arithmetic mean, e.g., spatially averaged) as the surface, e.g. more than about three times as large, e.g. more than about four times as large, e.g. more than about five times as large, e.g. in a range of about twice to about ten times as large or more than about ten times as large. The greater the roughness, the greater the adhesion of the parasitic coating to the primer surface element (e.g., comprising or formed from the primer layer).

Alternatively or additionally, the primer (e.g., primer layer) may have a roughness (e.g., a center-line arithmetic average, e.g., spatially averaged) greater than about 3.5 micrometers (μm), e.g. greater than about 3.7 μm, e.g. greater than about 3.9 μm, e.g. greater than about 4 μm, e.g. greater than about 4.5 μm, e.g. greater than about 5 μm, e.g. greater than about 5.3 μm, e.g. greater than about 6 μm, e.g. greater than about 10 μm, e.g. greater than about 15 μm, e.g. greater than about 20 μm, e.g. greater than about 30 μm, e.g. greater than about 50 μm, e.g. greater than about 100 μm. The thinner the primer surface element (e.g., the primer layer), the less it can affect the given geometry and gap dimensions of the ion beam source.

Optionally, the surface of the cathode and / or anode may have a roughness (e.g., a center-line arithmetic mean, e.g., spatially averaged) of greater than about 3.5 microns (μm), e.g. greater than about 3.7 μm, e.g. greater than about 3.9 μm, e.g. greater than about 4 μm, e.g. greater than about 4.5 μm, e.g. greater than about 5 μm, e.g. greater than about 5.3 μm, e.g. greater than about 6 μm, e.g. greater than about 10 μm, e.g. greater than about 15 μm, e.g. greater than about 20 μm, e.g. greater than about 30 μm, e.g. greater than about 50 μm, e.g. greater than about 100 μm.

According to various embodiments, the cathode may have an emission gap into which the emission region extends and / or is arranged.

According to various embodiments, the cathode may have a greater magnetic permeability than the anode and / or the primer (e.g., the primer layer). Alternatively or additionally, a magnetic permeability of the primer element (e.g., the primer layer) may be substantially equal to or less than the permeability of the anode. Illustratively, the primer (e.g., primer layer) may have low (or vanishing) magnetic permeability (e.g., about zero).

According to various embodiments, the cathode may comprise a ferromagnetic material (i.e., having a magnetic permeability greater than about 1 or greater than 1, e.g., greater than about 5, for example, greater than about 10). Alternatively or additionally, the primer (e.g., primer layer) and the anode may be approximately equal in magnetic permeability or less than each other than a value of the permeability of the anode, e.g. a difference from each other of less than about 50% of the permeability of the anode, e.g. less than about 25% of the permeability of the anode, e.g. less than about 10% of the permeability of the anode, e.g. less than about 5% of the permeability of the anode. For example, the anode and / or primer (e.g., the primer layer) may be nonmagnetic (i.e., having a magnetic permeability of substantially 1, that is, having a magnetic permeability of 1 plus minus 10%). It can thus be achieved that the anode and / or the adhesion-promoting surface element (for example the adhesion-promoting layer) less disturb the magnetic field in the emission gap.

According to various embodiments, the adhesion-promoting surface element (eg the adhesion-promoting layer) may comprise a metal and / or oxygen. For example, the metal (eg, Al or Ti or Cr) may have a chemical compound with oxygen. Then, the primer element (eg, the primer layer) may include or be formed of a chemical compound of the metal and oxygen (eg, metal oxide). Thus, the stability of the adhesion-promoting surface element (eg the Adhesion promoting layer) to a reactive atmosphere (eg comprising oxygen).

According to various embodiments, the primer element (eg the primer layer) may comprise at least one of: aluminum (Al), titanium (Ti), chromium (Cr), an alloy comprising aluminum and / or titanium and / or chromium, a ratio of oxygen to Metal of less than 1 (eg less than about 0.95, eg less than about 0.90, eg less than about 0.8, eg less than about 0.7, eg less than about 0.6, eg less than about 0.5). For example, the metal oxide may have a ratio of oxygen to metal of less than one.

The metals listed here are only examples and can be easily represented by injection molding as a layer. Of course, other metals can be used to make rough layers.

If the adhesion-promoting surface element (eg the adhesion-promoting layer) comprises or is formed from a metal oxide, it may be necessary to ensure that the layer has at least one electrical residual conductivity or more (eg electrically conductive and / or electrically conductive) and / or at least one partial layer having an electrical residual conductivity. This can be done, for example, in that a chemical composition of the adhesion-promoting surface element (for example the adhesion-promoting layer) is or is provided substoichiometrically (for example in the case of TiO ₂ -x). For TiO _2-x , "x" denotes the fraction of vacant vacancies. The vacancies can provide charge carriers and / or increase their mobility.

According to various embodiments, a substoichiometric (or substoichiometric chemical composition) may be understood as meaning that a body or region (or the material of which they are formed) has vacancies (e.g., oxygen vacancies). A void may be understood as a place in the regular array of atoms, ions, or molecules in the crystal lattice that is unoccupied. For example, sub stoichiometric may be understood to mean that greater than about 0.01% of the sites in the crystal lattice are void (i.e., vacant) (equivalent to 0.01% atomic percent vacancies or 0.01% deviation from stoichiometry), e.g. more than about 0.1%, e.g. more than about 1%, e.g. more than about 2% (or 5% or 10), e.g. more than about 25%, e.g. more than about 50%. In other words, the primer (e.g., the primer layer) may have greater than about 0.01 atomic percent (at%) vacancies, e.g. more than about 0.1 at%, e.g. more than about 1 at%, e.g. greater than about 2 at% (or 5 at% or 10 at%), e.g. more than about 25 at%, e.g. more than about 50 at%. For example, the crystal lattice may be polycrystalline. Alternatively or additionally, a sub-stoichiometric body or region (or the material of which they are formed) may tend to take up atoms (e.g., oxygen) from the environment (e.g., in air at atmospheric pressure), e.g. when thermally activated, e.g. can be incorporated into the crystal lattice (i.e., occupy the vacancies). With the incorporation of the atoms into the crystal lattice, its electrical conductivity can decrease. Upon reaching a chemical stoichiometric composition, the uptake of atoms may stagnate (clearly, all vacancies are occupied, that is, equilibrium is reached). Clearly, a substoichiometric chemical composition may have greater chemical reactivity than a stoichiometric chemical composition of the same combination of materials and / or the same crystal structure.

The less oxygen the primer (e.g., the primer layer) has, the greater the electrical conductivity of the primer (e.g., the primer layer) may be.

According to various embodiments, a thickness of the primer element (e.g., the primer layer) may decrease in a direction away from the emission region. In other words, the primer (e.g., the primer layer) may have a gradient in thickness (e.g., a layer thickness of the primer layer). The thickness of the primer element, e.g. the primer layer (e.g., averaged, e.g., spatially averaged) may be less than about 1 mm, e.g. less than about 0.5 mm, e.g. less than about 0.3 mm, e.g. less than about 0.25 mm, e.g. less than about 0.1 mm. The primer sheet (e.g., the primer layer) may or may be multi-layered. The more layers (individual layers) the multi-layered adhesion-promoting surface element (for example the multi-layered adhesion-promoting layer) has, the more gently it can be applied and / or the harder it can be.

According to various embodiments, at least two individual layers of the adhesion-promoting surface element (eg the adhesion-promoting layer) may differ from one another, for example in μm one of the following: its thickness, its electrical conductivity, its mechanical hardness, its chemical composition and / or its microstructure. Alternatively or additionally, the adhesion-promoting surface element (eg the adhesion-promoting layer) may have a gradient, for example in one of the following: its thickness, its electrical conductivity, its mechanical hardness, its chemical composition and / or its microstructure.

According to various embodiments, the primer surface element (e.g., the primer layer) may be electrically conductive and / or may have an electrically conductive surface (or single layer, respectively). Thus, trouble-free current transport through the primer (e.g., the primer layer) can be facilitated.

According to various embodiments, the adhesion-promoting surface element may comprise or be formed from at least one of the following: an adhesion-promoting layer; a plate, a sheet and / or a foil.

According to various embodiments, the primer (e.g., primer layer) may have a resistance value (e.g., surface contact resistance and / or resistivity) greater than that of the anode and / or cathode (or the material of which it is formed).

According to various embodiments, the adhesion-promoting surface element (eg the adhesion-promoting layer) may have a surface contact resistance (eg at a contact pressure of the measuring electrodes of 150 N / cm ² or more) smaller than approximately 100 Ω · cm ² , eg smaller than approximately 50 Ω · cm ² , eg less than about 5 Ω · cm ² , eg less than about 1 Ω · cm ² , eg less than about 0.1 Ω · cm ² , eg less than about 50 mΩ · cm ² , eg less than about 25 mΩ · cm ² , eg, less than about 10 milliohms · cm ² , eg, less than about 5 milliohms · cm ² , eg, less than about 1 milliohm · cm ² . The lower the surface contact resistance, the more trouble-free the current transport can be by adhesion-promoting surface element (for example the adhesion-promoting layer).

According to various embodiments, the surface contact resistance can be measured by measuring the resistance of the anode (e.g., a steel anode), especially when the layers are very thin. For example, the measured value can be compared with an uncoated anode to conclude the surface contact resistance.

According to various embodiments, alternatively or additionally, the resistivity of the layer may be determined, e.g. based on surface contact resistance. For example, a first ion beam source and a second ion beam source located in at least one primer surface element, e.g. an adhesion-promoting layer (e.g., on the anode and / or the cathode) according to various embodiments, differ in impedance (in operation, i.e. during plasma discharge) less than about 5%, e.g. less than about 2%, e.g. less than about 1%. In other words, the primer (e.g., primer layer) may be configured to cause a change (e.g., increase) in impedance of the ion beam source during operation by less than 5% (or 2% or 1%, respectively).

According to various embodiments, the surface contact resistance (ie, the electrical resistance per area A _C , also referred to as ICR value, Interfacial Contact Resistance, called) can be measured by the object to be measured (eg the anode) clamped between two planar measuring electrodes (eg gold contact plates) which press against each other with a predefined contact pressure (eg 150 N / cm ² or more). The contact surface of the measuring electrodes with the object to be measured may define the area A _C. The electrical resistance is then measured between the two measuring electrodes, that is to say clearly through the object to be measured. In other words, the interface resistance between opposite sides of the object to be measured can be measured.

According to various embodiments, a processing arrangement may include: a process chamber for processing a substrate in a process area of the process chamber; and an ion beam source according to various embodiments for generating an ion beam toward the processing area.

According to various embodiments, a method of treating an ion beam source having a cathode and an anode may include: providing a surface of the cathode and / or the anode, the surface having a first roughness; and applying (may also be referred to as applying) a primer to the surface having a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 microns.

According to various embodiments, the adhesion-promoting surface element may comprise a sheet and / or a foil which is fastened on the surface.

According to various embodiments, the attachment may be by at least one (one or more) of: screwing, gluing, soldering and / or bonding.

According to various embodiments, the primer may have the second roughness prior to application. For example, the method may further comprise: processing the primer before application, wherein the processing causes the second roughness. In other words, the primer can be processed according to the second roughness. Alternatively or additionally, the adhesion-promoting surface element (for example a sheet and / or a film) may comprise or be formed from an adhesion-promoting layer.

According to various embodiments, the application of the adhesion-promoting surface element may include coating the surface with an adhesion-promoting layer having the second roughness.

According to various embodiments, the coating may be carried out using solid particles which are exposed to a plasma for coating. Alternatively or additionally, the coating may include thermal spray coating.

According to various embodiments, the primer layer may be applied using electrochemical deposition (may also be referred to as electroplating or electroplating).

According to various embodiments, the method may further include: processing the adhesion promoting layer after coating to produce the second roughness (in other words, the processing may effect the second roughness). In other words, the primer layer can be processed according to the second roughness.

According to various embodiments, the processing may include roughening, e.g. by irradiation with a blasting agent, e.g. by means of particle irradiation.

According to various embodiments, the application of the primer element may be by bonding, soldering or screwing on a thin plate, wherein the roughness (surface roughness) of the primer element is processed before or after the application according to the second roughness.

For example, a soft plate (e.g., a metal plate), foil and / or sheet may be applied and subsequently corundum-irradiated. Alternatively, the plate (or the foil and / or the sheet) may be corundum-irradiated prior to application, wherein optionally prior to application, a flattening (illustratively a straightening) of the plate (or the film and / or the sheet) can take place ,

According to various embodiments, a hardness of the primer element (e.g., the sheet and / or the film) may be less than a hardness of the cathode and / or the anode.

According to various embodiments, the application of the adhesion-promoting surface element by means of electroplating (may also be referred to as electrodeposition) of a thin layer (may also be referred to as an adhesion-promoting layer) take place, the surface roughness of which is processed after application according to the second roughness.

According to various embodiments, a plate and / or a sheet may be understood to be mechanically self-supporting, i. illustratively, as mechanically stable to the weight (e.g., vertically oriented), i. to carry their own weight. On the other hand, a film can at least partially be adapted to the shape of the surface to which it is applied only under the action of the weight. Particularly thin sheets (e.g., having a thickness less than about 60 microns) may be referred to as a foil according to various embodiments.

According to various embodiments, the primer may comprise one (i.e., one or more) of the following elements (e.g., a laminate thereof): one or more sheets, one or more sheets, one or more sheets, and / or one or more tie layers. At least two of the elements can form a laminate.

According to various embodiments, a method of treating an ion beam source having a cathode and an anode may include: providing a surface of the cathode and / or the anode, the surface having a first roughness; and coating the surface with an adhesion promoting layer having a second roughness; wherein the second roughness is greater than the first roughness, e.g. more than about twice as large, e.g. more than about three times as large, e.g. more than about four times as large, e.g. more than about five times as large, e.g. in a range of about twice to about ten times as large or more than about ten times as large.

According to various embodiments, the coating may be carried out using solid particles and / or a thermal spraying process which is used for coating Be exposed to plasma. Alternatively or additionally, the coating may include thermal spray coating.

According to various embodiments, the coating may be multi-layered, e.g. in more than 10 layers, e.g. in more than 50 layers, in more than 100 layers. Alternatively or additionally, each layer may have a thickness in a range of about 10 μm to about 50 μm, e.g. in a range of about 20 μm to about 30 μm. Between the individual layers, cooling of the surface can take place, e.g. by more than half the temperature (as at or immediately after forming a layer), e.g. less than about 600 ° C, e.g. less than about 400 ° C, e.g. to less than about 200 ° C. A layer may have a thickness in a range of about 10 μm to about 50 μm, e.g. in a range of about 20 μm to about 30 μm.

According to various embodiments, the anode and / or the cathode may have a greater mechanical hardness than the primer element (e.g., the primer layer), e.g. more than about twice as large, e.g. more than about three times as large, e.g. more than about four times as large, e.g. more than about five times as large, e.g. in a range of about twice to about ten times as large or more than about ten times as large. The lower the hardness of the primer element (e.g., the primer layer), the easier it is to design and adjust, e.g. by means of particle irradiation, e.g. according to a given roughness.

For example, according to various embodiments, a sheet or foil may be applied which is subsequently particle-irradiated (e.g., by means of corundum particles).

According to various embodiments, a primer (e.g., a thin sheet and / or foil) may be applied to the anode and / or the cathode. The primer may comprise or be formed of aluminum and / or copper, or another metal having a lower hardness than the anode (e.g., a stainless steel anode) and / or the cathode.

The primer (e.g., a thin sheet and / or film) may be attached to the anode and / or the cathode, e.g. Bonded, soldered, glued and / or screwed on. For example, the adhesion-promoting surface element can be fixed by means of a so-called "Blitzbond method". The Blitzbond method may e.g. cause a maximum heating of the anode or cathode of less than 100 ° C.

To provide a flash bonding process, the primer (e.g., the primer layer) may comprise a plurality of layers (e.g., a laminate), wherein adjacent layers differ in their chemical composition. For example, the plurality of layers may include a plurality of first layers comprising a first material (e.g., aluminum) and a plurality of second layers having a second material (e.g., nickel) different therefrom. The first layers and the second layers may be arranged alternately. The first material and the second material may be arranged such that they react chemically exothermically with each other. When the chemical reaction is stimulated at one location, it propagates through the primer (e.g., the primer layer), which can cause the plurality of layers to bond together, and / or physically bond the primer (e.g., primer layer) to a substrate, e.g. the cathode and / or the anode.

The primer sheet (e.g., a thin sheet and / or film) may be processed (e.g., roughened, e.g., blasted) after application to increase roughness. For example, by means of subsequent processing (eg particle irradiation), a greater roughness can be achieved than by means of analogous processing of the anode and / or cathode itself. Optionally, a deformation during processing can be smaller, since the adhesion-promoting surface element of the anode and / or cathode is stabilized (illustratively eg, because a much stiffer stainless steel profile is underneath). After processing, the primer may have the second roughness.

Alternatively or in addition to processing (e.g., roughening, i.e., increasing roughness), the primer sheet may be coated with the primer layer. Thus, their effect can be combined and allow an easy exchange.

According to various embodiments, the primer may have a thickness (transverse to surface area) in a range of about 0.3 millimeters (mm) to about 10 mm, eg, in a range of about 0.5 mm to about 2 mm. A greater thickness may cause a bimetal effect upon cooling after attachment (eg, a bonding process) which deforms the anode or cathode, respectively. A smaller thickness, however, can better absorb the thermal stresses occurring and so the Protect the cathode or anode. According to various embodiments, a thickness of the adhesion-promoting surface element (eg the adhesion-promoting layer) may be less than a distance of the anode and / or the adhesion-promoting surface element (eg the adhesion-promoting layer) from the cathode, eg less than about 50% of the distance, eg less than about 25% of the distance Distance, eg less than about 10% of the distance, eg in a range of about 5% to about 50% of the distance.

If the adhesion-promoting surface element (for example the adhesion-promoting layer) has a greater thickness, a design adaptation of the ion beam source can take place so that the original distance is again set.

According to various embodiments, a thickness of the primer element (eg, the primer layer) may be less than about 2 mm (eg, less than about 1 mm, eg, less than about 0.5 mm, eg, less than about 0.25 mm, eg, less than about 0) , 2 mm, eg less than about 0.1 mm) and / or greater than about 20 μm (eg greater than about 30 μm, eg greater than about 50 μm, eg greater than about 100 μm, for example greater than about 200 μm, eg greater than about 500 μm).

According to various embodiments, at least one surface of the ion beam source (e.g., the surface of the cathode and / or anode to be coated with the primer layer) may be roughened (also referred to as a roughened surface), e.g. by sand blasting, by glass bead blasting, by grinding or by etching or by irradiation with another blasting agent, also referred to as particle irradiation (for example, the blasting agent may comprise or be formed from a metal oxide such as corundum or metal nitride or a metal carbide or semimetal carbide such as silicon carbide). In this case, the abrasive may have a grain size of, for example F12 or greater. For example, the roughened surface of the ion beam source may have a roughness greater than a roughness of an opposite inner surface of the ion beam source (e.g., the anode or cathode, e.g., an uncoated surface) e.g. within a cavity in which the anode is disposed.

For example, the roughened surface may have _a centerline roughness (or R _a roughness) greater than about 0.2 μm, eg, greater than about 0.5 μm, eg, greater than about 1 μm, eg, greater than about 2 μm, eg, greater greater than about 7.5 μm, eg greater than about 10 μm, and / or eg in a range of about 0.2 μm to about 20 μm, eg in a range of about 1 μm to about 15 μm, eg about 12.2 μm.

For example, roughness (Ra value) of about 12.2 μm can be achieved by corundum-blasting aluminum. If steel is irradiated analogously, a lower roughness can be achieved.

According to various embodiments, an ion beam source may further comprise a magnet assembly having one or more magnets for generating a magnetic field in the emission region or the emission gap, i. which penetrates the emission region or the emission gap gap.

According to various embodiments, an ion beam source may include an anode and a cathode for generating and emitting (emitting) the ion beam. The emission characteristic of the ion beam source may be defined by the shape of the anode and / or the shape of the cathode and / or their relative arrangement with each other.

The emission characteristic of the ion beam source can be influenced by the location of the formation of the ions (emission region), as well as the electrical and / or magnetic field profile at the location of formation (generation) of the ions in the ion beam source. Clearly, the electrical and / or magnetic field course can influence the direction with which ions are emitted. For example, in an ion beam source, most of the ions can be generated (generated) in an area in close proximity to the anode (eg, via the cathode), with the electric field in this area being approximately perpendicular to the surface of the anode (anode surface) can (eg in an ion beam source of the anode-layer type). Thus, the shape and / or orientation of the anode surface can influence the electrical field profile and thus the emission characteristic.

The trajectory of the ions generated in the emission region (e.g., at the anode surface) and emitted away from the anode may be additionally affected by a magnetic field penetrating the emission region. For example, a cathode may have two cathode poles between which a magnetic field can be provided. Due to the high mass of the ions compared to electrons, the influence of the trajectory of the ions due to the magnetic field may be lower than for example in the case of electrons, the magnetic field may lead to a small tilt of the beam with respect to the normal direction of the anode surface, e.g. with a small speed component in the racetrack direction (circulation direction of the racetrack).

An apparatus for generating an ion beam may include, in accordance with various embodiments: a cathode and an anode for generating ions in an emission region; wherein the anode may have an anode surface associated with the emission region, wherein the anode surface defines a major propagation direction (also referred to as emission direction) for the ions generated in the emission region, which is directed away from the anode.

According to various embodiments, the main propagation direction may be substantially perpendicular (eg with a tolerance of less than ± 5 °, eg with a tolerance of less than ± 2 °, eg with a tolerance of less than ± 1 °) to the anode surface be directed. In other words, the normal vector of the anode surface may substantially define the respective main propagation direction. Illustratively, the main propagation direction may designate a direction in which ions emitted in the emission region (the center of gravity of the emitted ions) move away from the anode surface in the course of time.

The center of gravity of ions (e.g., a plurality of ions or a spatial distribution of ions) of an ion distribution may be described as an average of the positions of the ions as weighted with the mass of ions of the ion distribution. Analogously, the center of gravity movement can describe the movement of the center of gravity of the multiple ions over time. For example, the ions provided at one time in the emission region (at the anode surface associated therewith) may be spatially distributed and form an ion distribution, the ion distribution having a center of gravity which over time (from the time) of away from the emission region and into the main propagation direction defined by the associated anode surface. In other words, a main propagation direction may correspond to the direction of the averaged pulse of the ions which are located at and / or emitted at a point in time (in one of the emission regions) between the ion beam source and the substrate. The momentum of an ion can be defined by its mass, its velocity and its velocity direction.

The anode and / or the cathode may be an electrically conductive material, e.g. a metal (such as copper, iron, aluminum, etc.), a metal alloy (such as steel, brass, bronze, etc.) or a support (eg, an insulating support such as a ceramic) with an electrically conductive primer (eg having or formed therefrom electrically conductive adhesion-promoting layer). For example, if the anode is water cooled, corrosion resistant materials may be used, e.g. Copper or (stainless) stainless steel.

According to various embodiments, the cathode (e.g., plate-shaped and) may have a gap (emission gap) which partially covers the anode, e.g. at least the anode surface, exposes. The anode surface may be coated by the primer layer. Alternatively or additionally, a surface of the cathode (cathode surface) adjacent to the emission region (e.g., a surface of the cathode poles) may be coated by means of an adhesion promoting layer.

Clearly, the anode can be arranged at the emission gap, so that a part of the anode is not covered by the cathode. For example, the anode may be disposed relative to the cathode such that the anode and the cathode are at least 1 mm apart. In other words, the anode may be arranged relative to the cathode such that the anode is separated from the cathode by means of a further gap, the further gap having an extension between anode and cathode in a range of approximately 1 mm to approximately 10 mm ,

A cathode may be arranged such that the emission region (or the emission gap) may have a self-contained shape (e.g., annular, oval, or quadrilateral, with rounded corners). According to various embodiments, an ion beam source may be configured such that a racetrack may form along an emission region (or the emission gap of the cathode). For example, a closed electron current can circulate without interruption along the racetrack. Clearly, the emission region (or the emission gap) can run along a closed path and divide the cathode into an inner section and an outer section surrounding the inner section.

A plate-shaped cathode may have two substantially parallel base surfaces and at least one adjacent to the two base surfaces side surface. Optionally, the side surfaces may taper towards each other towards the emission area (clearly a pointed shape of the magnetic poles)

The spacing of the base surfaces from each other can define a thickness in the thickness direction (perpendicular to the base surfaces) of the plate-shaped cathode, wherein an extension of the plate-shaped cathode perpendicular to the thickness direction (illustratively a width) may be greater than the thickness, for example greater than three times the thickness , Illustratively, one herein as plate-shaped designated body have a smaller thickness (height) than width (perpendicular to the thickness or height).

According to various embodiments, the cathode and the anode may be configured such that the emission region has two emission region sections which are arranged alongside one another (arranged). The two emission region sections may be clearly spaced from one another and elongated in a direction perpendicular to the distance. The two emission region portions may each extend into and / or be disposed in a portion of the emission gap (emission gap portions).

The two emission region sections may be interconnected by at least one further curved emission region section, e.g. by a respective curved emission area section on opposite sides. Thus, an emission area may be provided which runs along a self-contained path (may also be referred to as a racetrack).

The cathode, anode and / or emission region (or emission gap), e.g. each of the two emission region sections (or emission gap sections) may have a longitudinal extension (extension) greater than about 0.1 m, e.g. greater than about 0.3 m, e.g. greater than about 1 m, e.g. greater than about 2 m, e.g. greater than about 3 m, e.g. in a range of about 2 m to about 5 m.

According to various embodiments, the (e.g., plate-shaped) cathode may have a cathode surface, wherein the emission gap may extend through the cathode between two opposing boundary surfaces of the cathode.

The emission gap may have two gap walls extending between the two boundary surfaces. The two gap walls clearly form a wall of the emission gap. The gap walls may be at an angle to each other. For example, the emission gap may be configured as an elongate passage opening in the cathode, wherein the elongate passage opening or the emission gap may have an opening angle.

Clearly, a gap width of the cathode (width of the emission gap, responsive to the pitch of the cathode poles) may increase along the thickness direction of the cathode (away from the anode). The average gap width may be in the range of a few millimeters, e.g. For example, the average gap width may be less than about 20 mm, e.g. less than about 10 mm, e.g. less than about 5 mm, e.g. about 2 mm. In the course of the operation of the ion beam source, the cathode may become worn (e.g., by erosion), which may lead to an increase in the gap width. For example, the initial gap width may be about 2 mm and increase with erosion as the operating time increases.

According to various embodiments, a distance between the ion beam source and the processing region (eg the substrate and / or a transport surface along which the substrate is transported, eg measured perpendicular to the substrate and / or the transport surface) may range from about 100 mm to about 400 mm lie, for example in a range of about 100 mm to about 200 mm.

According to various embodiments, the primer (e.g., primer layer) may have greater resistance to erosion (e.g., sputtering) during operation of the ion beam source than the surface, e.g. per power (kilowatts - kW) and / or per time (e.g., per hour).

In other words, the primer (e.g., the primer layer) may have a lower removal rate (abraded thickness per power and / or per time) than the surface. For example, the primer (e.g., the primer layer) may have a removal rate (abraded thickness per kilowatt hour - kWh) of less than about 10 μm / kWh, e.g. less than about 5 μm / kWh, e.g. less than about 2 μm / kWh, e.g. less than about 1 μm / kWh, e.g. less than about 0.5 μm / kWh. The removal rate may be related to the length of the emission region (i.e., a removed thickness per kilowatt-hour of elongation), e.g. to a length of the emission region in a range of about 1 m to about 2 m (for example, about 1.42 m). For example, the primer (e.g., the primer layer) may have a removal rate of less than about 7 μm / kWh · m, e.g. less than about 3.5 μm / kWh · m, e.g. less than about 1.4 μm / kWh · m, e.g. less than about 0.7 μm / kWh · m, e.g. less than about 0.35 μm / kWh · m. With the removal rate, the increase in gap width representing e.g. occurs on each side of the gap. For example, the gap width can increase with twice the removal rate.

The removal rate may be related to a process gas and / or its chemical composition, which may be e.g. Oxygen and / or argon or may be formed therefrom.

According to various embodiments, the surface may comprise or form a depression in which the adhesion-promoting surface element (eg the adhesion-promoting layer) is arranged. For example, the adhesion-promoting surface element (eg the adhesion-promoting layer) may be at least partially arranged and / or recessed in a depression (eg in the form of a groove) of the anode. For example, the primer surface element (eg, the primer layer) may be flush with or lower than the surrounding surface. Thus, the thickness of the primer surface element (eg, the primer layer) may have less influence on the geometry of the ion beam source. The roughness (may also be referred to as roughness) of the primer element (eg, the primer layer) may increase (eg, for certain coating methods) with increasing thickness. Therefore, according to various embodiments, an adhesion-promoting surface element (eg the adhesion-promoting layer) below the emission gap may have the greatest thickness or layer thickness (eg in the form of a thickening) (which decreases, for example, towards the edge).

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1A and 1B each an ion beam source according to various embodiments in a schematic cross-sectional view or side view;

2A and 2 B each an ion beam source according to various embodiments in a schematic cross-sectional view or side view;

3 an ion beam source according to various embodiments in a schematic plan view;

4A and 4B each an ion beam source according to various embodiments in a schematic cross-sectional view or side view;

5A and 5B in each case a processing arrangement according to various embodiments in a schematic cross-sectional view or side view;

6A an ion beam source according to various embodiments in a schematic perspective view;

6B a processing arrangement according to various embodiments in a schematic cross-sectional view or side view;

7A and 7B in each case an anode according to various embodiments in a schematic detail view;

8A and 8B in each case an anode according to various embodiments in a schematic detail view;

9 a processing arrangement according to various embodiments in a schematic perspective view;

10 an ion beam source according to various embodiments in a schematic perspective view;

11A and 11B in each case a processing arrangement according to various embodiments in a schematic cross-sectional view or side view;

12A . 12B and 12C in each case an ion beam source in a method according to various embodiments in a schematic cross-sectional view or side view;

13 a method according to various embodiments in a schematic flow diagram;

14 an ion beam source in a method according to various embodiments in a schematic plan view;

15A and 15B in each case an anode according to various embodiments in a schematic detail view;

16A and 16B in each case an anode according to various embodiments in a schematic detail view;

17A an anode according to various embodiments in a schematic detail view; and

17B a cathode according to various embodiments in a schematic detail view.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard will Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

According to various embodiments, a roughness may be understood as an arithmetic mean roughness (also referred to as center roughness or R _a value).

According to various embodiments, a ferromagnetic material or body may be understood to mean that the material or body has a magnetic permeability greater than about 10, e.g. greater than about 20, e.g. greater than about 50, e.g. greater than about 100, e.g. greater than about 150, e.g. greater than about 200, e.g. greater than about 300. According to various embodiments, a non-magnetic material or body may be understood to mean that the material or body has a magnetic permeability of substantially 1, e.g. in a range of from about to about 0.5 to 1.5, e.g. in a range of about to about 0.75 to 1.25, ranging from about to about 0.9 to 1.1. The magnetic permeability μ (also referred to as magnetic conductivity) defines the permeability of matter for magnetic fields. The magnetic permeability (also simply permeability) describes the ratio of the magnetic flux density to the magnetic field strength inside the matter.

According to various embodiments, an electrically conductive material or body may be understood to mean that the material or body has an electrical conductivity of greater than about 10 ⁴ S / m, eg, greater than about 10 ⁵ S / m, eg greater than about 10 ⁶ S / m, for example of more than about 2 × 10 ⁶ S / m, for example of more than about 5 × 10 ⁶ S / m, for example of more than about 10 ⁷ S / m, for example of more than about 2 × 10 ⁷ S / m, eg of more than about 5 · 10 ⁷ S / m. According to various embodiments, an electrically residual-conductive material or body can be understood as meaning that the material or the body has an electrical conductivity of more than electrically insulating and less than electrically conductive.

The impedance of the ion beam source (or its plasma discharge, also referred to as plasma impedance) may depend on the length of the discharge region (racetrack length). The plasma discharge impedance (plasma impedance) relative to a racetrack length segment (eg, in a range of about 0.2 cm to about 2 cm, eg, about 1 cm) may range from about 0.5 megohms to about 2 megaohms MOhm are, for example at about 1 MOhm. For example, with a racetrack length of about 1.44 m, when operating with argon and an applied voltage of about 3000 volts (V), a discharge current of about 0.5 amperes (A) may result. The resulting impedance of 6K ohms may be approximately 864K ohms (kilo ohms) relative to approximately 1 cm of the racetrack. Depending on the type and process gas used, the plasma impedance may differ.

According to various embodiments, the primer (e.g., an electrically conductive material or body, e.g., the primer layer) may have a smaller electrical impedance than the discharge of the ion beam source, i. the impedance of the adhesion-promoting-area element (or the adhesion-promoting layer) is smaller than the plasma impedance, e.g. less than about 10% of the plasma impedance, e.g. less than about 1% of the plasma impedance, e.g. less than about 0.1% of the plasma impedance, e.g. less than about 0.01% of the plasma impedance.

According to various embodiments, an apparatus is provided for ion beam etching of substrates, for example for pre-treatment, for processing or for processing substrates. According to various embodiments, a simple and robust anode layer ion source (or anode layer ion beam source) may optionally be used, which is optionally configured to generate an (eg, focused) ion beam. For example, an ion beam from a self-contained Racetrack (a Area in which plasma is provided) can be generated, wherein the then emitted ions, for example, can be focused. On average (eg in a cross-section) through a linear ion beam source, two separate beams (ion sub-beams) with low divergence (partial beam divergence) can emerge, which emerge from the racetrack in both directions.

The characteristic dimensions of the active part of an ion beam source, i. the distance of the cathode poles from one another and / or that from the anode can be in the range of a few millimeters, e.g. in a range of 1 mm approximately to about 10 mm, e.g. in a range of 1 mm approximately to about 5 mm, e.g. about 2.5 mm.

On the anode and / or the cathode of the ion beam source (e.g., an anode layer ion source), a layer parasitically grows during operation of the ion beam source, i. these are parasitically coated. The material of the parasitic growing layer may originate from the ion beam source treated (processed), e.g. etched, have substrate. Alternatively or additionally, the material of the parasitically growing layer may originate at the poles of the cathodes (cathode poles) which may be e.g. can be removed during operation (eg sputtered).

The area of the anode which is parasitically coated may have a similar extent as the emission gap. Clearly, the area may be a few millimeters below the emission gap. Due to the intense plasma in the emission space (can also be referred to as a discharge space or emission range), the parasitic coating can be under mechanical stress. Likewise, negative ions (for example at oxygen inlet) in the space between anode and cathode can be accelerated in the direction of the anode, thereby incorporated into the parasitic coating and thus increase the layer stress. If the adhesion of the parasitic coating to the anode is exceeded, it may lead to (at least partial) detachment of the parasitic coating. The detached parts of the parasitic coating can result in short circuits and premature end of the campaign (shutdown of the ion beam source).

To improve adhesion, the anodes and / or the cathode may optionally be blasted by means of a blasting material (e.g., glass beads, sand, and / or corundum) (may also be referred to as sand blasting or particle blasting) and thereby roughened. The resulting roughness (roughness) can define the first roughness.

In a roughening, e.g. using corundum as blasting material, the machined workpiece, e.g. the anode, tend to deform. For example, to reduce the tendency for deformation (i.e., to make the workpiece less or less distorted), glass beads may be used as the blasting material. This can result in less roughness than when e.g. Corundum particles are used. Alternatively, the workpiece may comprise or be formed of a harder material to reduce the tendency to deform, e.g. Stole.

The harder the material irradiated with the blasting material, the smaller the roughness achieved can be. When irradiating a hard material, e.g. Steel (e.g., stainless steel), by means of the blasting material (e.g., by corundum blasting), can achieve less roughness than when blasting a softer material, such as aluminum. Aluminum and / or copper. Therefore, while the use of a softer material may provide greater roughness, the use of a softer material tends to distort during irradiation (i.e., it may distort during sandblasting).

According to various embodiments, the anode and / or the cathode may be made of a hard material and the required roughness provided by the primer (e.g. In other words, according to various embodiments, the mechanical properties of the anode and / or the cathode may or may not be decoupled from their adhesion-promoting properties. The anode and / or the cathode may include or be formed from steel. For example, the anode may comprise or be formed from non-magnetic stainless steel. For example, the cathode may include or be formed from ferromagnetic steel (e.g., mild steel). According to various embodiments, the anode may comprise or be formed from a hollow profile, e.g. a stainless steel hollow profile.

According to various embodiments, a primer (e.g., primer layer) is provided which will roughen the surface of the anode and / or cathode. Coating with the primer (e.g., primer layer) may be by thermal spraying (e.g., by plasma spraying). The (e.g., sprayed) primer (e.g., the (e.g., sprayed) primer layer) may be electrically conductive, e.g. to enable the function of the anode.

According to various embodiments, the adhesion-promoting surface element (eg the Adhesive layer) aluminum or substoichiometric titanium oxide (TiO _x with x less than 2) have or be formed therefrom.

According to various embodiments, an ion source (e.g., anode layer) is provided wherein the anode has a roughened surface at least below the emission gap and / or the cathode at the emission gap. For example, a roughness of the anode on one side may be greater in the direction of the emission gap (e.g., at least below the emission gap) than on a side opposite the emission gap. For example, a roughness of the cathode on one side may be greater in the direction of the emission gap (e.g., at the emission gap) and / or opposite the anode (outer surface) than on a side opposite the emission gap and / or on one side of the anode (inner surface).

According to various embodiments, the anode may be provided at least below the emission gap and / or the cathode at the emission gap with a rough and / or electrically conductive primer (e.g., a rough and / or electroconductive primer layer).

According to various embodiments, the adhesion-promoting surface element (eg the adhesion-promoting layer) may or may not be applied by means of plasma spraying. According to various embodiments, the adhesion-promoting surface element (eg the adhesion-promoting layer) may comprise or be formed from a metal and / or electrically conductive oxide. The adhesion-promoting surface element (eg the adhesion-promoting layer) may comprise, for example, titanium, aluminum (Al) and / or chromium (Cr), an alloy of aluminum, chromium and / or titanium (Ti) and / or substoichiometric metal oxide (eg TiO ₂ -x) or be formed from this.

According to various embodiments, the primer (e.g., the primer layer) may have a centerline roughness in a range of about 3 μm to about 100 μm, e.g. in a range of about 3 μm to about 50 μm.

According to various embodiments, the primer surface element (e.g., the primer layer) may be thinned with increasing distance to the (active) emission region. In other words, a thickness of the primer element (e.g., the primer layer) may decrease with increasing distance from the emission gap. For example, the primer (e.g., the primer layer) may be disposed only on a central portion of the anode. For example, the primer (e.g., primer layer) may be or may be formed without masking or covering, e.g. be or be injected.

According to various embodiments, the primer (e.g., primer layer) may be formed along the entire emission gap (e.g., along its entire circumference).

1A and 1B each illustrate an ion beam source 100a . 100b according to various embodiments in a schematic cross-sectional view (eg along the main propagation direction 207 . 209 cut) or side view.

According to various embodiments, the ion beam source 100a . 100b a cathode 202 and an anode 204 exhibit.

According to various embodiments, the cathode 202 be formed substantially plate-shaped (eg, the cathode 202 have or be formed from a metal sheet). For example, the cathode 202 two parallel surfaces 202o (Base areas) whose distance 202d each other's thickness 202d the cathode 202 Are defined. For example, the cathode 202 have a thickness in a range of about to about 1 mm to about 1 cm, eg about 2 mm. For example, the cathode 202 be formed by a laser process.

The anode 204 may comprise two juxtaposed anode sections, the respective anode section having a first anode surface 204a and a second anode surface 204b having. The two anode sections (or the first anode surface 204a and the second anode surface 204b ) may be connected to each other by at least one further curved anode portion (or its anode surface), for example by a respective curved anode portion (or its anode surfaces) on opposite sides. Thus, the anode can 204 (or their total anode surface) along a self-contained path (eg in the form of a ring).

Illustratively, the anode surfaces 204a . 204b a boundary surface of the anode 204 (or the anode portions) form or part of a boundary surface of the anode 204 be. Furthermore, the anode surfaces 204a . 204b plan (in other words, just) be set up. Illustratively, the anode surfaces 204a . 204b be set up for example by grinding or milling plan.

Furthermore, the cathode 202 a gap 202s (Emission slit 202s or emission opening 202s ) or more columns 202s exhibit. The anode 204 and the emission gap 202s can be arranged relative to each other so that the emission gap 202s the anode surfaces 204a . 204b the anode 204 can expose. The emission gap 202s may be configured as through holes and along the thickness direction 205 through the cathode 202 extend through.

In the emission gap 202s can be the ion beam source 100a . 100b a first emission area section 211 and a second emission area section 213 exhibit. The emission range sections 211 . 213 may illustratively designate the portions in which an ion-forming gas (eg, a process gas) may be ionized to provide ions. The ions may be, for example, by means of one in the two emission region sections 211 . 213 (eg, from the ion-forming gas) are provided plasma. To form an ion beam from the provided ions, the ions provided may be in one direction 207 . 209 (Main propagation direction 207 . 209 ) away from the anode 204 (or in a direction away from the emission area sections 211 . 213 ) are emitted.

This can be an electric field between the anode 204 and the cathode 202 in the two emission range sections 211 . 213 be or be provided. Illustratively, the electric field in the emission gap 202s be provided. To provide the electric field, the cathode 202 and the anode 204 with a voltage source for generating a voltage (operating voltage) between the cathode 202 and the anode 204 be coupled. In this case, by means of the voltage source at the cathode 202 a first electrical potential and at the anode 204 be provided a second electrical potential, wherein between the first electric potential and the second electric potential, an electric field may be formed or can be.

The ions provided can interact with each other, for example, repel each other, and / or interact with the electric field. In this case, a force can act on the ions provided, which accelerates the ions in such a way that they move in the directions 207 . 209 away from the anode 204 and / or away from the two emission area sections 211 . 213 be emitted. To get out of the two emission range sections 211 . 213 emitted ions can form an (eg focussed) ion beam, ions with a first main propagation direction 207 from the first emission area section 211 be emitted (first emission direction 207 ) and with a second main propagation direction 209 from the second emission range section 213 emitted (second emission direction 209 ), which run at an angle to each other. In this case, the course of the electric field lines (and thus, for example, the shape of the anode or the angle of the anode surfaces 204a . 204b each other) of the electric field has an influence on the two emission directions 207 . 209 to have.

The electric field may depend on the shape of the cathode 202 and / or the shape of the anode 204 be defined and / or influenced. For example, at the anode surfaces 204a . 204b exiting electric field lines in the two emission area sections 211 . 213 extending into it. In this case, the first emission direction 207 at least from the first emission area section 211 assigned (eg to the first emission range section 211 adjacent) first anode surface 204a be defined or become. For example, the first emission direction 207 perpendicular to the first anode surface 204a run, eg parallel to the direction 205 ,

Analogously, the second emission direction 209 at least from the (the second emission range section 213 assigned) second anode surface 204b be defined or become. The second emission direction 209 can be analogous to the first emission direction 207 for example, perpendicular to the second anode surface 204b run. In this case, the first emission direction 207 at an angle 513 (Convergence angle) to the second emission direction 209 (see 5A ) or parallel (cf. 6B ) run to this.

The geometry (eg the extent) of the emission gap 202s may be arranged such that the of the anode surfaces 204a . 204b away emitted ions (or only slightly) with the cathode 202 collide. For example, the two emission directions 207 . 209 from the two anode surfaces 204a . 204b through the emission gap 202s extending through it. Illustratively, the emission gap 202s be wide enough to allow ions through the emission gap 202s can be emitted through.

According to various embodiments, the ion beam source 100a a primer surface element 110h (eg an adhesive layer 110h having or formed therefrom), which on the first anode surface 204a and / or the second anode surfaces 204b is arranged. The primer surface element 110h (eg the adhesion layer 110h ) can be at least on a section of the respective emission area section 211 . 213 facing surface of the anode 204 (the first anode surface 204a and / or the second anode surfaces 204b ) can be arranged.

Optionally, the first anode surface 204a and / or the second anode surfaces 204b (and / or the curvedly extending anode surfaces) may be roughened or become, eg, before, the primer surface element 110h applied (eg the adhesion layer 110h is formed). The primer surface element 110h (eg the adhesion layer 110h ), the first anode surface 204a and / or the second anode surfaces 204b may have a roughness greater than a roughness of at least one of the following: eg one of the anodes 204 facing surface 202o the cathode 202 (eg at a distance from the emission gap 202s ) and one of the first anode surfaces 204a and / or the second anode surfaces 204b opposite surface of the anode 204 (Illustratively, for example, a bottom of the anode 204 ).

According to various embodiments, the ion beam source 100a a primer surface element 110h (eg an adhesive layer 110h having or formed therefrom), which on the cathode 202 (For example, the cathode poles) is arranged. As in 1B Illustrated may be a primer 110h (eg an adhesive layer 110h ) on one of the anode 204 remote surface 202o the cathode 202 be arranged. The primer surface element 110h (eg the adhesion layer 110h ) can be optional in the emission gap 202s extending into it.

Optionally, a primer surface element 110h (eg an adhesive layer 110h having or formed therefrom) on one of the anode 204 facing surface 202o the cathode 202 be arranged (see for example 17B ).

An extension of the primer element 110h (eg the adhesive layer 110h ) on the anode 204 along direction 201 can be larger than an extension 304d the emission gap 202s along direction 201 (Width 304d the emission gap 202s ).

2A and 2 B each illustrate an ion beam source 200a . 200b according to various embodiments in a schematic cross-sectional view or side view.

According to various embodiments, the two anode surfaces 204a . 204b , eg symmetrically (eg with an equal angle, eg the amount according to), be inclined to each other, eg with respect to the cathode surface 202o , For example, the angle of the first anode surface 204a to the direction 201 the angle of the second anode surface 204b to the direction 201 correspond.

The cathode 202 can side faces 212s . 222s have the emission gap 202s can laterally limit and / or the geometry of the emission gap 202s can define. The side surfaces 212s . 222s the cathode 202 can do so at an angle to the direction 205 run, at an angle to the cathode surface 202o and / or at an angle to each other. For example, that of the side surfaces 212s . 222s limited emission gap 202s have a trapezoidal cross-section. The side surfaces can be clearly illustrated 212s . 222s be bevelled (ie have a chamfer), for example, symmetrical or asymmetrical with respect to the cathode surface 202o ,

As in 2A and 2 B is illustrated, the emission gap 202s the cathode 202 in an interior section 212 and one the inside section 212 surrounding outer section 222 separate.

According to various embodiments, the first angle 212w and the second angle 222w in a range of about 10 ° to about 80 °, for example in a range of about 25 ° to about 65 °. Furthermore, the first angle 212w and the second angle 222w to be different from each other (asymmetrically) by an angular difference. The angular difference may be in a range of about 1 ° to about 40 °. According to various embodiments, the angular difference may be approximately equal to the tilt angle of the anode surfaces 204a . 204b correspond. For example, the first angle 212w in a range of about 40 ° to about 50 ° and the second angle 222w may be in a range of about 50 ° to about 60 °.

The primer surface element 110h (eg the adhesion layer 110h ) may be disposed on at least one of the following surfaces: a sidewall 222s . 212s the emission gap 202s , a cathode surface 222o (Which is remote from the anode and / or to the emission gap 202s adjacent), one the emission gap 202s facing anode surface, one between two sections of the emission gap 202s arranged cathode surface 212o , and / or another cathode surface 252o (Which faces the anode and / or to the emission gap 202s adjacent)

The anode 204 and the cathode 202 can a distance 210d from each other in a range of about 1 mm to about 10 mm.

3 illustrates an ion beam source 300 according to various embodiments in a schematic plan view.

The one in the cathode 202 formed emission gap 202s can be arranged side by side and (eg in one direction 203 ) have elongated emission gap sections, similar to a racetrack. Clearly, the emission gap sections can be spaced 302d perpendicular to its longitudinal extent (along direction 203 ) exhibit. The distance 302d may be smaller than the longitudinal extent. For example, two emission gap sections 202s extending parallel to each other and / or aligned.

The racetrack may extend along a self-contained path (illustratively, track). For example, the path may be circular.

In this case, the gap width 304d the emission gap 202s (eg the average gap width 304d ) from the distance of the (the emission gap 202s limiting) side surfaces 222s . 212s (also as sidewalls of the emission gap 202s designated) of the cathode 202 be defined or become. For example, the emission gap 202s a constant gap width 304d exhibit.

According to various embodiments, the emission gap 202s the corresponding emission range sections 211 . 213 define (or provide). Each of the two emission area sections 211 . 213 may be at least partially extended and / or disposed in one of the two emission gap sections.

The outer section 222 the cathode 202 can thereby the inner section 212 the cathode 202 surrounded, being between the inner section 212 and the outside section 222 the cathode 202 the emission gap 202s can be provided. According to various embodiments, the emission gap 202s be extended along a closed path, and be, for example, annular, oval shaped or square (eg with rounded corners).

As described above, for providing ions, plasma may be in the emission region portions 211 . 213 be generated. For example, the plasma may be generated in a plasma channel with the plasma channel along the emission gap 202s (and / or the emission range sections 211 . 213 ) can be extended. For example, the plasma channel may be self-contained and passing through the emission region portions 211 . 213 extend through. A self-contained plasma channel may be referred to as a racetrack, wherein the shape and / or location of the plasma channel from the cathode 202 or their emission gap 202s be predefined or can be.

4A and 4B each illustrate an ion beam source 400a . 400b according to various embodiments in a schematic cross-sectional view or side view.

According to various embodiments, the anode 204 in a cavity 402a or in a recess 402a a housing 402 be arranged. The recess 402a of the housing 402 can also be from the cathode 202 (eg a plate-shaped cathode 202 ) be covered or, for example, so that between the inner section 212 the cathode 202 and the outside section 222 the cathode 202 formed emission gap 202s over the anode 204 is arranged.

The housing 402 For example, it may provide electrical and / or magnetic shielding to facilitate operation of the ion beam source 400a . 400b within predetermined operating parameters (eg for generating an ion beam with a predetermined ion intensity and / or predetermined emission direction). Furthermore, the housing 402 according to various embodiments, as a supporting structure (that of the ion beam source 400a . 400b may dictate rigidity), as part of the magnetic circuit and / or as shielding of the anode 204 Act. The housing 402 may be ferromagnetic, for example.

Furthermore, the housing 402 a supply structure for electrically supplying the cathode 202 and / or the anode 204 exhibit. For example, the cathode 202 and / or the anode 204 be coupled by means of the supply structure with a power supply, for providing a voltage between the cathode 202 and the anode 204 ,

Furthermore, the housing 402 a cooling device for adjusting a temperature at the cathode 202 and / or the anode 204 exhibit. For example, a cooling device may comprise a tube through which a cooling fluid flows, which communicates with the cathode 202 and / or the anode 204 thermally and / or physically coupled. For example, the anode 204 be traversed by water.

The opening angle 402w the emission gap 202s For example, it may range from about 0 ° to about 120 °, eg, from about 40 ° to about 120 °, eg, in one Range from about 80 ° to about 100 °, eg about 90 °. Furthermore, the opening angle 402w the emission gap 202s according to the first emission direction 207 . 209 be tilted. In this case, an angle bisector of the opening angle 402w with the respective emission direction 207 . 209 coincide.

For example, the cathode 202 have a lasered sheet or a plurality of lasered sheets or be formed therefrom. Then vertical (or mutually parallel) flanks of the laser cut the side walls 222s . 212s form (ie the then the emission gap 202s limit). The cathode 202 For example, it may have a thickness which can be processed by means of a laser process (ie the laser cut), eg in a range from about 1 mm to about 5 mm, for example about 2 mm. In other words, the emission gap 202s be formed by a laser cut or be.

According to various embodiments, the ion beam source 400a . 400b a magnet arrangement 404 for generating a magnetic field 403a . 403b exhibit. By means of the magnetic field 403a . 403b may be a plasma formation in the emission gap 202s get supported.

The magnet arrangement 404 For example, it may comprise one or more magnets (eg, permanent magnets), the magnets being magnetized 401m (eg in one direction 205 ).

The cathode 202 and / or the housing 402 may comprise a material having a relative (magnetic) permeability (permeability number) greater than 10, eg greater than about 50, eg greater than about 100 , For example, the cathode 202 and / or the housing 402 a ferromagnetic material (eg iron, cobalt, magnetite, ferrite, nickel or a steel alloy, such as silicon steel, tungsten steel, cast steel, etc.), or be ferromagnetic, so that the cathode 202 and / or the housing 402 by means of the magnet arrangement 404 are magnetizable / is. The magnet arrangement 404 can be between the interior section 212 the cathode 202 and the housing 402 be arranged.

Thus, as in 4A is shown, a magnetic flux 403a . 403b in the emission gap 202s be provided, wherein the emission area sections 211 . 213 from the magnetic flux (or from the magnetic field) 403a . 403b be penetrated. In other words, a part of the magnetic flux may form a magnetic circuit along a closed path around the anode 204 form around.

The the emission gap 202s delimiting areas of the cathode 202 may be referred to as cathode poles, wherein the cathode poles may optionally be arranged offset in height to each other.

The the emission gap 202s limiting side surfaces 212s . 222s the cathode 202 can be a course of the magnetic field 403a . 403b within the emission gap 202s define. For example, a gradient of the magnetic field 403a . 403b in the emission gap 202s be enlarged, the larger the angle, in which the emission gap 202s limiting side surfaces 212s . 222s the cathode 202 to each other. In other words, the stray magnetic field with bevelled side surfaces 212s . 222s be larger than parallel side surfaces 212s . 222s ,

So that the anode 204 the course of the magnetic flux (or the course of the magnetic field 403a . 403b ), the anode may comprise a material having a low permeability number (substantially 1), eg a nonmagnetic material or a diamagnetic material (having a permeability of less than 1). The anode 204 For example, copper, graphite, non-magnetic steel or a (eg electrically conductive or electrically restleitfähige) have ceramic.

The anode 204 can from the case 402 and / or the cathode 202 be arranged electrically isolated and / or held. For example, the anode 204 by means of an electrically insulating holder 402s (For example, a ceramic socket) on the housing 402 be attached or become. The electrically insulating holder 402s may have a material with a low permeability (approximately 1), which, for example, has a low electrical conductivity (eg less than 10 ^-6 S / m).

Furthermore, an ion-forming (or plasma-forming) gas, for example a process gas, by means of a gas supply 406 the emission area sections 211 . 213 be supplied. In this case, the process gas by means of the gas supply 406 , as in 4A is shown, the recess 402a in the case 402 be fed so that the process gas into the recess 402a flows in and out of the recess 402a out through the emission gap 202s flows out through it. The process gas can pass through the emission area sections 211 . 213 flow through it. Alternatively, the process gas from outside the housing (eg from one direction 201 ) the emission range sections 211 . 213 be supplied.

As in 4B illustrates, the anode can 204 optionally complete with the primer sheet 110h covered (eg with the Bonding layer 110h coated).

5A and 5B each illustrate a processing arrangement 500a . 500b according to various embodiments in a schematic cross-sectional view or side view.

The processing arrangement 500a can a process chamber 502 , eg as a vacuum chamber 502 set up.

The process chamber 502 For example, it may be configured such that during processing (or processing) of a substrate 504 in the process chamber 502 the environmental conditions (the process conditions) within the process chamber 502 (eg pressure, temperature, gas composition, etc.) can be adjusted or regulated. This can be done by the process chamber 502 be airtight, dustproof or vacuum-tight, or be set up so that within the process chamber 502 a gas atmosphere having a predefined composition or pressure (eg, according to a set point) may be provided. For example, one gas or several different gases in the process chamber 502 be or be provided.

The process chamber 502 can be an access area 502z (eg an opening) or multiple access areas 502z (eg, multiple openings) through which the substrate 504 into the interior of the process chamber 502 brought in or from the inside of the process chamber 502 can be brought out. Furthermore, the access area 502z opposite the exterior of the process chamber 502 be sealed or be, for example by means of a valve or a valve flap. By means of the access area 502z can the process chamber 502 for example with further process chambers 502 be coupled.

Furthermore, the process chamber 502 with a pump arrangement 804 (see 11A and 11B ) for pumping (evacuating) the process chamber 502 be coupled and against a external pressure (eg air pressure) to be stably established. Several interconnected process chambers 502 can form a common vacuum system, with the coupled process chambers 502 a lock chamber arrangement for introducing and / or discharging the substrate 504 can have.

The processing arrangement 500a may also be one in the process chamber 502 arranged transport device 506 for transporting the substrate 504 in the process chamber 502 into, out of the process chamber 502 out or in the process chamber 502 (eg for positioning the substrate 504 in the process chamber 502 ) exhibit.

The processing arrangement 500a For example, according to various embodiments, one may be for generating an (eg, focused) ion beam 508 suitable ion beam source 200 have, for example, for irradiation 805 a surface 504o of the substrate 504 with the ion beam 508 in the process chamber 502 , For example, the processing arrangement 500a an ion beam source 200 (Eg one of the ion beam sources described above 100a . 100b . 200a . 200b . 300 . 400a . 400b or an ion beam source similar thereto) as described above.

By means of the ion beam source 200 can be an ion beam 508 be provided, wherein the ion beam 508 a first partial ion beam 508a and a second partial ion beam 508b and wherein the two partial ion beams 508a . 508b at an angle 513 (Convergence angle 513 ) are emitted to each other. The first partial ion beam 508a can in the first emission direction 207 and the second partial ion beam 508b in the second emission direction 209 be emitted. According to various embodiments, the ion beam source 200 be set up such that the emitted ions of both partial ion beams 508a . 508b to a common area 504b the surface 504o of the substrate 504 (Processing area 504b ).

The ions of the (eg focused) ion beam 508 can be a medium emission direction 511 have an angle 511w (angle of incidence 511w ) with which the (eg focused) ion beam 508 on the surface ( 504o ) of the substrate ( 504 ). The mean emission direction 511 may be due to the superposition of the two emission directions 207 . 209 the partial ion beams 508a . 508b be defined. For example, the mean emission direction 511 approximately along the bisector of the convergence angle 513 run.

The distance of the processing area can be clear 803 to the first emission area section 211 approximately the distance of the editing area 504b to the second emission range section 213 match, so the two partial ion beams 508a . 508b can be about the same length.

According to various embodiments, the substrate 504 by means of the transport device 506 (eg optionally by means of a substrate holder) along a transport plane 504e be transported, for example by the processing area 803 therethrough. The (eg focused) ion beam 805 can, for example, from below onto a surface 504o one substrate 504 act. Illustratively, the arrangement can be relative to a substrate 504 and / or a substrate transport plane 504e in which a substrate 504 can be transported, arbitrarily oriented (arranged and aligned) (and, for example, the shape of a process chamber 502 or the course of the substrate transport plane 504e in the process chamber 502 be adjusted). In other words, the ion beam source 200 relative to a substrate 504 be arranged and aligned so that a surface to be machined 504o of the substrate 504 by means of the ion beam source 200 can be irradiated.

According to various embodiments, the processing arrangement 500b a carrier 408 (Catcher) or more carriers 408 have, which are arranged such that this atomized material 411 absorb. The and / or the carriers 408 can form a catcher. Illustratively, the at least one carrier 408 act as a dirt trap.

The at least one carrier 408 For example, above, laterally or below the beam path (the Teilionenstrahlen 508a . 508b ) as a catcher (absorber) for the atomized material 411 be furnished. According to various embodiments, the carrier 408 have a metal sheet. Furthermore, a slat curtain as a strainer 408 be used. Clearly, the mudflap can be displaced (oriented approximately parallel to one another) towards one another (in the direction 501 , eg in substrate transport direction 501 ) arranged sheets.

According to various embodiments, the plurality of carriers 408 , as in 5B is illustrated, offset from one another, such that material which is not from one of the carriers 408 is absorbed, towards an adjacent carrier 408 can be reflected. For example, the boundary surfaces of the carrier 408 be set up so that by the carriers 408 reflected material in a direction away from the ion beam source 200 is reflected. By means of the catcher 408 may be a parasitic coating of the ion beam source 200 be reduced.

According to various embodiments, the ion beam source 200 relative to the surface of the substrate 504 be arranged such that one by means of the ion beam source 200 emitted (eg focused) ion beam 508 at an angle 511w on a surface 504o a substrate 504 is directed. The irradiation of the surface 504o of the substrate 504 by means of the ion beam 508 can be done such that a first part 508a of the ion beam 508 is emitted with a first direction and a second part 508b of the (eg focused) ion beam is emitted with a second direction (different from the first direction). In this case, the ion beam source 200 relative to the surface 504o of the substrate 504 be arranged such that one by means of the first part 508a of the ion beam 508 irradiated partial surface of the substrate 504 and one by means of the second part 508b of the (eg focused) ion beam 508 irradiated partial surface of the substrate 504 overlap.

6A illustrates an ion beam source 600 according to various embodiments in a schematic perspective view and 6B a processing arrangement 600b with the ion beam source 600 according to various embodiments in a schematic cross-sectional view or side view.

In this case, an (eg unfocused) anode-layer ion beam source relative to a substrate to be irradiated 504 be arranged (aligned) that the generated ion beam 508a . 508b obliquely on the substrate 504 incident. So set up by the ion sub-beams 508a . 508b irradiated areas (processing areas 504b ) of the substrate 504 can be at a distance from each other. Illustratively, by means of a processing arrangement 600b with inclined ion beam source 600 and parallel to one direction 207 . 209 emerging bundles of rays 508a . 508b a short ion partial beam 508a and a long ion sub-beam 508b between the ion beam source 600 and the substrate 504 be generated. Illustratively, there is a means of the shorter ion partial beam 508a irradiated processing area 504b (eg, a removal area) of the substrate 504 closer to the ion beam source 600 as one by means of the longer ion sub-beam 508b irradiated processing area 504b of the substrate 504 ,

7A and 7B each illustrate an anode 204 According to various embodiments in a schematic detail view (eg transverse to the direction 203 cut).

The anode 204 may comprise or be formed from a hollow body. In other words, the anode can 204 a cavity 802 exhibit. The cavity 802 may be configured to receive a coolant (eg, a coolant and / or a coolant gas). The cavity 802 For example, it may be coupled to a coolant port. The coolant connection may be coupled to a coolant supply which is in operation of the ion beam source 200 a coolant through the cavity 802 passes through.

As in 7A illustrated, a the respective emission range section 211 . 213 (or the emission range 211 . 213 ) facing surface 204a . 204b the anode 204 (eg to the emission area 211 . 213 contiguous) at least partially (ie partially or completely) with the primer surface element 110h (eg with the adhesion layer 110h ), for example more than about 50%, eg more than about 75%, eg more than about 90%.

As in 7B One can illustrate the emission range 211 . 213 facing surface 204a . 204b the anode 204 (eg to the emission area 211 . 213 adjacent) partially with the primer sheet 110h (eg with the adhesion layer 110 ), eg less than about 50%, eg less than about 25%, eg less than about 10%.

Alternatively or additionally, an expansion of the adhesion-promoting surface element 110h (eg the adhesive layer 110h ), as in 7B illustrates being larger than the width 711 of the emission range 211 . 213 , eg greater than twice the width 711 of the emission range 211 . 213 , eg greater than three times the width 711 of the emission range 211 . 213 , The width 711 of the emission range 211 . 213 can depend on the distance of the side surfaces 212s . 222s the cathode 202 be defined or become (eg identical with it)

As in 7B illustrated, the primer may be 110h (eg the adhesion mediation layer) 110h a gradient in thickness 110d (eg layer thickness 110d ), eg along a direction parallel to the surface 204a . 204b the anode 204 lies (eg across the thickness 110d or layer thickness 110d ). For example, the thickness 110d in a direction which is a directional component away from the emission area 211 . 213 smaller, eg on opposite sides of the primer element 110h (eg the adhesive layer 110h ).

The area 804G of the primer element 110h (eg the adhesive layer 110h ), in which the thickness 110d decreases (gradient range 804G ), can be across the thickness 110d an extension 110g which is greater than the thickness 110d ,

8A and 8B each illustrate an anode 204 According to various embodiments in a schematic detail view (eg transverse to the direction 203 cut).

As in 8A illustrates the gradient range 804G across the thickness 110 (eg layer thickness 110d ) an extension 110g which is smaller than the thickness 110d , eg, essentially disappear. Illustratively, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) over the entire coated area of the anode 204 a substantially homogeneous thickness 110d (ie essentially from a homogeneous region 806 formed), eg with a maximum variation less than about 20%, eg less than about 10%, eg less than about 5%, eg less than about 1%).

As in 8B illustrated, the primer may be 110h (eg the adhesion layer 110h ) a gradient range 804G which is the emission range 211 . 213 facing surface 204a . 204b the anode 204 (eg to the emission area 211 . 213 adjacent) at least partially (ie, partially or completely), eg, greater than about 25%, eg, greater than about 50%, eg, greater than about 75%, eg, ranging from about 25% to about 75%.

Alternatively or additionally, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) a homogeneous area 806 which has a substantially homogeneous thickness 110d having. The homogeneous area 806 Can the emissions range 211 . 213 facing surface 204a . 204b the anode 204 (eg to the emission area 211 . 213 adjacent) at least partially (ie, partially or completely), eg, greater than about 25%, eg, greater than about 50%, eg, greater than about 75%, eg, ranging from about 25% to about 75%.

The 7A . 7B . 8A . 8B illustrate possible cross sections of the thickness or the cross section of the bonding surface element 110h (eg the adhesive layer 110 ). These can of course be approximated by a variety of similar profiles, for example, by rounded shapes, such as a Gaussian profile.

9 illustrates a processing arrangement 900 according to various embodiments in a schematic perspective view.

The ion beam source 200 can be attached to a chamber lid 904 be attached. The chamber lid 904 can be a sealing surface 904d having an associated chamber opening in a processing chamber 502 (Process chamber 502 ) seals, eg if the chamber lid 904 resting on the chamber opening.

The processing arrangement 900 can be a supply arrangement 910 (Also referred to as supply structure), which, for example, on the chamber lid 904 is attached. The supply arrangement 910 may include a power supply and / or a coolant supply. Alternatively or additionally, the supply arrangement 910 one or more supply links 910a have, for example, one or more power boosts, one or more high voltage high vacuum pump connections 914 , one or more high voltage connections (for more than 1000 Volt designed) one or more forevacuum pump connections 912 and / or one or more coolant connections 916 , Optionally, the supply arrangement 910 one to each high vacuum pump port 914 having connected high-vacuum pump, which, for example, with the one or more forevacuum pump connections 912 is coupled.

10 illustrates an ion beam source 1000 according to various embodiments in a schematic perspective view.

The ion beam source 1000 may be a mounting arrangement 1002 which has a position and / or orientation of the cathode 202 and / or the anode 204 Are defined. The mounting arrangement 1002 can be an adjustable joint 1004 by means of which the position and / or orientation of the cathode 202 and / or the anode 204 be or can be.

By means of the fastening arrangement 1002 can be the ion beam source 1000 at a processing chamber 502 , eg on the chamber lid 904 be attached or be.

11A and 11B each illustrate a processing arrangement 1100a . 1100b according to various embodiments in a schematic cross-sectional view or side view.

According to various embodiments, the processing arrangement 1100a . 1100b at least one processing chamber 502 (one or more processing chambers 502 ), which can be provided by means of the chamber housing or can be. The at least one processing chamber 502 may be configured to create and / or maintain a vacuum therein. For example, the processing arrangement 1100a . 1100b several of the 11A and 11B illustrated processing chambers 502 each of which, for example, two adjacent processing chambers 502 contiguous. The adjoining processing chambers 502 can be connected to each other by means of a substrate transfer opening, so that they form, for example, a common vacuum system. Alternatively or additionally, between two processing chambers 502 another chamber may be arranged, for example a gas separation chamber.

In every processing chamber 502 the processing arrangement 1100a . 1100b can be an ion beam source 200 be arranged or, which may optionally differ from each other in pairs. In at least one of the processing chambers 502 (ie in one or more than one processing chamber 502 ) may optionally have a catcher 408 be arranged according to various embodiments.

According to various embodiments, the processing arrangement 1100a . 1100b a pump arrangement 804 (comprising at least one high vacuum pump). The pump arrangement 804 can be set up, the at least one processing chamber 502 (eg the vacuum chamber 502 ) to withdraw a gas (eg the process gas), so that within the at least one processing chamber 502 a vacuum (ie a pressure less than 0.3 bar) and / or a pressure in a range of about 10 ^-3 millibar (mbar) to about 10 ^-7 mbar (in other words high vacuum) or a pressure less than high vacuum, For example, less than about 10 ^-7 mbar (in other words ultrahigh vacuum) may or may not be provided.

According to various embodiments, the pressure (base pressure) in the processing chamber 502 For example, to perform an ion beam process (eg, outside the operation of the ion beam source 200 ) be less than about 10 ^-3 mbar, eg less than about 10 ^-4 mbar. Alternatively or additionally, the pressure (process pressure, ie while the process gas is admitted, for example by means of the ion beam source 200 ) are within a range of about 10 ^-4 mbar to about 5 × 10 ^-3 mbar, for example in a range of about 3 × 10 ^-4 mbar 2 × 10 ^-3 mbar. The process pressure and / or the base pressure may depend on the available pumping speed of the pumps used.

According to various embodiments, the processing arrangement 1100a . 1100b a controller 518 having, which with several components of the processing arrangement 1100a . 1100b coupled (shown in phantom) can be.

Furthermore, the at least one processing chamber 502 be set up such that the vacuum conditions (the process conditions) within the at least one processing chamber 502 (Eg process pressure, process temperature, chemical process gas composition, etc.) can be provided or regulated, for example during the Ion beam treatment (ie during operation of the ion beam source 200 ), eg by means of the controller 518 ,

According to various embodiments, the processing arrangement 1100a . 1100b a gas supply 716 exhibit. By means of the gas supply 716 can the at least one processing chamber 502 a process gas is supplied to form a process atmosphere in the at least one processing chamber 502 , The process gas may for example comprise or be formed from a working gas and / or a reactive gas. The process pressure can be formed from a balance of process gas, which by means of the gas supply 716 supplied and by means of the pump assembly 804 is withdrawn.

According to various embodiments, the reactive gas may comprise at least one of oxygen, nitrogen, hydrogen sulfide, methane, gaseous hydrocarbons, fluorine, chlorine, or other gaseous material. Alternatively or additionally, the working gas may include or be formed from an inert gas, such as a noble gas, e.g. Argon. The reactive gas may have a higher chemical reactivity than the working gas.

According to various embodiments, the controller may 518 be set up to control and / or regulate the vacuum conditions. For example, by means of the controller 518 the gas supply 716 and / or the pump assembly 804 controlled and / or regulated, for example on the basis of a specification. The default may, for example, the vacuum conditions, such as a chemical composition of the gas inside the processing chamber 502 , and / or an operating parameter of the ion beam source 200 (eg recorded electrical current, applied voltage, ion intensity and / or recorded electrical power).

According to various embodiments, the controller may 518 for controlling and / or regulating the ion beam source 200 be set up, for example, based on the specification. The default, for example, an operating parameter of the ion beam source 200 represent. For example, by means of the controller 518 the actual processing characteristic in the processing area 803 be controlled and / or regulated, for example by means of Stellens or rules of operating parameters of the ion beam source 200 , eg based on a desired operating parameter characteristic (eg a desired ion intensity). Alternatively or additionally, processing of a substrate 504 controlled and / or regulated. Then, the default may represent a processing characteristic (eg, a desired etch rate). The processing characteristic may include at least one of: an etch rate (ie, an ablated amount of material per time, eg, spatially averaged and / or their spatial distribution), an etch progress (ie, an ablated amount of material per area, eg, spatially averaged, and / or their spatial distribution) and / or a superposition of it.

According to various embodiments, the processing arrangement 1100a a substrate transport device 506 exhibit. According to various embodiments, the substrate transport device 506 the processing arrangement 1100a an unwinding roll 502a have for unwinding a band-shaped substrate 504 in the processing area 803 into it. Furthermore, the substrate transport device 506 the processing arrangement 1100a a take-up roll 502b for winding up the band-shaped substrate 504 which, from the processing area 803 is brought out.

A band-shaped substrate 504 (Tape substrate) may be, for example, a metal tape or a metal foil, or a plastic tape (polymer tape) or a plastic film (polymer film). According to various embodiments, the tape substrate may comprise any material, eg, a metal, a semi-metal, a polymer, a glass, or any other material having a correspondingly small material thickness and / or as fibers by means of rolling 114r or rolling 114r let process. Illustratively, a tape substrate may be any substrate 504 to be on a roll 502a . 502b can be wound up and / or, for example, from roll-to-roll can be processed. Depending on the material, a tape substrate may have a thickness in a range of about a few micrometers (eg, from about 1 μm) to about a few millimeters (eg, up to about 10 mm).

According to various embodiments, the substrate transport device 506 the processing arrangement 1100a a variety of transport wheels 114r having a (eg single or multiple curved) transport path 504e (or a corresponding transport area 504e ) along which the band-shaped substrate 504 between the unwinding roll 502a and the take-up roll 502b through the processing area 803 is transported through.

Alternatively, the substrate transport device 506 the processing arrangement 1100b a variety of transport wheels 114r which is used to transport a plate-shaped substrate 504 are set up. The plate-shaped substrate 504 can, for example on the transport wheels 114r resting and / or in a substrate carrier 1110 inserted, transported.

Furthermore, the processing arrangement 1100a . 1100b a transport drive 1602 comprising at least part of the plurality of transport rollers 114r and optionally with the unwind roll 502a and the take-up roll 502b , is coupled. For example, the transport drive 1602 using chains, belts or gears with the rollers 114r . 502a . 502b be coupled. The transport wheels 114r and the transport drive 1602 may be part of the substrate transport device 506 be.

According to various embodiments, the controller may 518 for controlling and / or regulating the transport drive 1602 be furnished. For example, by means of the controller 518 a transport state (eg, a transport speed, a transport position, a substrate flow, etc.) may be controlled and / or regulated, for example, based on a preset representing a processing characteristic and / or based on a position of the at least one substrate 504 or the substrate carrier 1110 ,

12A and 12B each illustrate an ion beam source in a method according to various embodiments in a schematic cross-sectional view or side view.

As in view 1200a Illustrated may be a workpiece, eg the anode 204 and / or the cathode 202 (For example, the cathode pole) of the ion beam source, with a surface to be coated 1202 be or be provided. The surface to be coated 1202 may have a first roughness. The first roughness may be from the manufacture (eg, casting, milling and / or grinding) of the workpiece 202 . 204 be defined.

Optionally, the surface to be coated 1202 roughened, eg by means of etching, grinding and / or by irradiation 1212 with a blasting material 1212p (Particle irradiation), as in view 1200a is exemplified. Then the first roughness may or may not be defined by the roughening. The surface to be coated 1202 For example, it may then have a greater roughness than another surface of the workpiece 202 . 204 , eg one of the surfaces to be coated 1202 opposite surface of the workpiece 202 . 204 ,

As in view 1200b Illustrated may be a primer 110h (eg an adhesive layer 110h ) on the workpiece 202 . 204 , eg the anode 204 and / or the cathode 202 (For example, the cathode pole) of the ion beam source can be arranged. To form the adhesive area element 110h (eg the adhesive layer 110h ) can be solid particles 1210P be used. The solid particles 1210P can by means of a plasma 1210 or be heated by another thermal process, for example, at least partially activated and / or at least partially melted. In other words, the solid particles 1210P by means of the plasma 1210 are heated to a temperature equal to or more than their melting temperature. For example, the solid particles 1210P the plasma 1210 supplied 506 become.

For example, the plasma 1210 be provided by a plasma source or be, for example by means of a plasma torch. The plasma torch may provide an arc which ionizes a gas (gas stream) or gas mixture flowing the plasma torch. The gas may include or be formed from argon, nitrogen, hydrogen and / or helium. Alternatively or additionally, the gas may comprise air or be formed therefrom.

Due to ionization, the plasma can 1210 be generated, ie a highly heated (to 20000 Kelvin) and / or electrically conductive gas, which has separated ions and electrons. In this plasma 1210 can the solid particles 1210P (For example, a powder) are introduced. The solid particles 1210P can from the plasma 1210 (ie by the plasma temperature) are melted. The gas flow (plasma stream) can affect the workpiece 202 . 204 be or be directed. The gas stream conveys the solid particles 1210P to the surface to be coated 1202 of the workpiece 202 . 204 , The solid particles 1210P can adhere to the surface to be coated 1202 of the workpiece 202 . 204 attach and the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) form.

The at least partially activated and / or molten solid particles 1210P can on the surface to be coated 1202 of the workpiece 202 . 204 solidify and / or at least partially chemically combine with it (eg, a metal-metal compound), for example, at least partially merge with it and / or chemically react.

Optionally, a part of the surface to be coated 1202 of the workpiece 202 . 204 by means of a mask 1208 be shielded or become. Then the coating can be done through the mask 1208 through.

The solid particles 1210P may have an average extension (ie, grain size, eg, diameter) in a range of about 5 μm to about 120 μm, or in a range of about 100 nm to about 5 μm, eg, in a range of about 5 μm to about 50 μm. The Adhesion surface element 110h , eg the adhesive layer 110h , (eg their surface 110o ) may have a second roughness which is greater than the first roughness.

For example, the second roughness of the average extent of the solid particles 1210P be defined or become. The second roughness, for example, may be smaller than the mean extent of the solid particles 1210P (Grit). For example, the second roughness may range from about 10% of the grain to about 90% of the grain, eg, from about 10% of the grain to about 50% of the grain.

The solid particles 1210P may comprise at least one of: aluminum, chromium, titanium, an alloy comprising aluminum and / or titanium, a ratio of oxygen to metal (eg, titanium) of less than 1. Alternatively or additionally, the solid particles 1210P or the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) Alumina, spinels and / or a ceramic mixing system (for example comprising aluminum oxide) or be formed therefrom.

Alternatively or additionally, the coating may include or be achieved by a thermal spraying process, e.g. Arc spraying, powder flame spraying, wire flame spraying, high-speed flame spraying, plasma spraying and / or cold gas spraying.

Optionally, after coating, a roughening of the primer surface element 110h (eg the adhesive layer 110h ) (ie, that roughness of the primer sheet element 110h (eg the adhesive layer 110h ) is increased), eg by means of particle irradiation.

The primer surface element 110h (eg the adhesion layer 110h ) can be an electrically conductive surface 110o which are on one of the workpiece 202 . 204 opposite side of the adhesive area element 110h (eg the adhesive layer 110h ) is arranged. The electrically conductive surface 110o For example, it may comprise or be formed from a metal and / or an electrically conductive oxide.

Alternatively or additionally, the surface 110o of the primer element 110h (eg the adhesive layer 110h ) have an electrical conductivity greater than about 10 S / m, eg greater than about 10 ² S / m, eg greater than about 10 ³ S / m, eg greater than about 10 ⁴ S / m, eg greater as about 10 ⁵ S / m, eg of more than about 10 ⁶ S / m.

Optionally, the primer surface element 110h (eg the adhesion layer 110h ) a (eg electrically conductive) passivation layer 110o exhibit. For example, the passivation layer 110o be formed or when the material of the bonding surface element 110h (eg the adhesive layer 110h ) natively oxidized and / or has an electrically insulating oxide. The passivation layer 110o may have an electrical conductivity which is greater than an oxide of the adhesion-promoting surface element 110h (eg the adhesive layer 110h ), ie, an oxide of the material of the primer element 110h (eg the adhesive layer 110h ), eg an electrical conductivity of more than about 10 S / m, for example of more than about 10 ² S / m, for example of more than about 10 ³ S / m, for example of more than about 10 ⁴ S / m, for example greater than about 10 ⁵ S / m, eg, greater than about 10 ⁶ S / m. Indicates the primer surface element 110h (eg the adhesion layer 110h ) itself an oxide or is formed therefrom, which is sufficiently electrically conductive, for example, in the case of unteröchöchiometischem titanium oxide (TiO _x with x less than 2), ie when the primer surface element 110h (eg the adhesion layer 110h ) has a ratio of oxygen to titanium of less than 1, the passivation layer 110o be omitted. The passivation layer 110o may be more chemically resistant than the surface to which it is applied. For example, the passivation layer 110o have an oxide (eg stoichiometric), for example for the passivation of a metallic surface.

Alternatively or in addition to the passivation layer 110o can be a current transport layer 110o (may also be referred to as a conductive layer or a conductive layer). The current transport layer 110o may be electrically conductive or eg electrically conductive in accordance with various embodiments.

By means of coating, it is also possible to use materials other than an adhesion-promoting layer 110h For example, a carbide (eg, tungsten carbide, chromium carbide, and / or titanium carbide), a metal (eg, aluminum, iron, copper, molybdenum, nickel, niobium, tantalum, titanium, tungsten, zinc, and / or tin) comprising an alloy Metal, an oxide ceramic (for example aluminum oxide, chromium oxide, zirconium oxide, titanium oxide, mullite, yttrium oxide and / or spinel) and / or a layer composite material (for example a nickel alloy / tungsten carbide layer composite material, a nickel graphite layer composite material and / or a nickel bentonite layer composite material) , For example, the individual layers of the adhesion-promoting surface element 110h (eg the adhesive layer 110h ) differ in their material, their chemical composition and / or their hardness.

12C illustrates an ion beam source in a method according to various embodiments in a schematic cross-sectional view or side view.

As in view 1200c may be coating by means of a nozzle 1252 respectively. The nozzle 1252 can the solid particles 1210P (For example, a powder) are emitted, for example in the direction of the workpiece 202 . 204 , The nozzle 1252 can be a collimation of the solid particles 1210P (or their direction of motion) effect. The solid particles 1210P can optionally be transported and / or collimated by means of a gas jet. In other words, the solid particles 1210P a particle jet 1262 form (collimated aligned directions of movement), which by its spatial distribution of the solid particles 1210P the shape of the primer element 110h (eg the adhesive layer 110h ) Are defined. For example, the thickness of the primer element may be 110h (eg the adhesive layer 110h ) fall to the edge.

13 illustrates a method 1300 according to various embodiments in a schematic flowchart.

The procedure 1300 can in 1302 comprising: providing a surface of the cathode and / or the anode, wherein the surface has a first roughness. Furthermore, the method can be found in 1304 comprising: applying a primer to the surface having a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 microns.

For example, the method in 1304 comprising: coating the surface with a primer layer having a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 microns.

14 illustrates an ion beam source 1400 in a method according to various embodiments in a schematic plan view.

According to various embodiments, the cathode poles (which are connected to the emission gap 202s adjacent sections of the cathode 202 ) on both sides of the emission gap 202s with a primer surface element 110h covered (eg with the primer layer 110h coated).

The primer surface element 110h (eg the adhesion layer 110h ) can have a width (along direction 201 ) which is smaller than a distance of the two emission gap portions 202s from each other. For example, the primer element 110h (eg the adhesion layer 110h ) in the form of a (self-contained) strip, which is the contour of the emission gap 202s follows. For example, the in 14 illustrated view of the anode-facing side of the cathode 202 (clearly underside) show. Alternatively, the primer element may 110h (eg the adhesion layer 110h ) on the anode (hidden in the view) and / or the anode side facing away from the cathode 202 be arranged and trained.

The outer section 222 may comprise an outer cathode sheet and the inner portion 212 may include or be formed from an inner cathode sheet. The outer cathode sheet and the inner cathode sheet may be attached to the housing (may also be referred to as a cathode body), for example by means of screwing.

15A and 15B each illustrate an anode 204 According to various embodiments in a schematic detail view (eg transverse to the direction 203 cut).

According to various embodiments, the anode 204 a depression 1502 (eg a groove 1502 ) exhibit. For example, the recess may be extended along a closed path. In the depression 1502 may be the primer element 110h (eg the adhesion layer 110h ) can be arranged.

The depression 1502 may be a protrusion of the primer element 110h (eg the adhesive layer 110h ) reduce and / or prevent. Thus, a larger second roughness can be achieved, for example when the second roughness increases with increasing thickness 110d of the primer element 110h (eg the adhesive layer 110h ) increases.

For example, the depression 1502 be set up such that the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) is not sublime. In other words, a depth of the recess 1502 , ie their extension into the anode 204 in about the thickness 110d of the primer element 110h (Eg the layer thickness of the adhesion-promoting layer 110h ), as in 15A is illustrated. Optionally, the recess 1502 the area 804G of the primer element 110h (eg the adhesive layer 110h ), in which the thickness 110d decrease, provide and / or compensate. This can be the depression 1502 have oblique side surfaces. For example, this may be a surface of the adhesive area element 110h (eg the adhesive layer 110h ) be or become planarized. According to various embodiments, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) have a planar surface, as in 15A is illustrated.

Alternatively, the primer surface element 110h (eg the adhesion layer 110h ) from the depression 1502 stand out as in 15B is illustrated.

16A and 16B each illustrate an anode 204 According to various embodiments in a schematic detail view (eg transverse to the direction 203 cut), analogous to the previously described.

According to various embodiments, the recess 1502 have parallel side surface.

17A illustrates an anode 204 According to various embodiments in a schematic detail view (eg transverse to the direction 203 cut), analogous to the previously described.

According to various embodiments, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) at least one projecting portion 1702 over a side surface of the recess 1502 exhibit. For example, the at least one protruding section 1702 by ejecting the depression 1502 (eg a groove 1502 ) arise.

17B illustrates a cathode 202 According to various embodiments in a schematic detail view (eg transverse to the direction 203 cut), analogous to the previously described.

According to various embodiments, the cathode 202 a fastening structure 1704 have (eg, having one or more through holes, threads, holes, screws, etc.) by means of which the cathode 202 can be attached to the housing.

According to various embodiments, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) at least a first section 1706 which is on the side surface 212s . 222s the cathode is arranged. The first paragraph 1706 can be a thickness (perpendicular to the side surface 212s . 222s measured) in a range of about to about 0.1 mm to 0.3 mm or less. The first paragraph 1706 For example, it may include or be formed from a metal oxide (eg, titanium oxide), eg, in a substoichiometric composition (eg, TiO ₂ -x). Alternatively or additionally, the first section 1706 be electrically conductive or at least electrically rest conductive. The first paragraph 1706 may have the second roughness.

According to various embodiments, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) at least a second section 1712 which is on the other cathode surface 252o is arranged. The second section 1712 can be a thickness (perpendicular to the other cathode surface 252o measured) in a range of about to about 0.1 mm to 0.3 mm, eg about 0.2 mm or less. The second section 1712 For example, it may comprise or be formed from a metal oxide (eg, titanium oxide), eg, in a substoichiometric composition (eg, TiO ₂ -x) and / or the same chemical composition as the first portion 1206 , Alternatively or additionally, the second section 1712 be electrically conductive or at least electrically rest conductive. The second section 1712 may have the second roughness.

According to various embodiments, the adhesion-promoting surface element 110h (eg the adhesion layer 110h ) at least a third section 1710 which is on one edge of the cathode 202 is arranged, for example, an edge on which the further cathode surface 252o and the side surface 212s . 222s collide. The third section 1710 can be a thickness 1708 (eg parallel to the other cathode surface 252o measured) in a range of about to about 0.1 mm to 0.3 mm or more, for example, less than 0.5 mm. The third section 1712 can the first section 1706 with the second section 1712 connect (ie physically contact both). The third section 1712 For example, it may comprise or be formed from a metal oxide (eg, titanium oxide), eg, in a substoichiometric composition (eg, TiO ₂ -x) and / or the same chemical composition as the first portion 1206 , Alternatively or additionally, the third section 1710 be electrically conductive or at least electrically rest conductive. The third section 1710 may have the second roughness. The third section 1710 can be an edge (eg compliant to the cathode 202 ) exhibit.

According to various embodiments, the outer portion 222 the section shown 1714 the cathode 205 have or be formed from it. Alternatively or additionally, the inner portion 212 the section shown 1714 the cathode 205 have or be formed from it.

According to various embodiments, a thickness of the Adhesion surface element 110h (eg the adhesive layer 110h ) is less than a thickness of the cathode 202 (eg extension along direction 205 ).

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited non-patent literature

• DIN EN ISO 4287: 2010 [0009]

Claims (16)

Ion beam source ( 100a . 100b . 200 ), comprising: • a cathode ( 202 ) and an anode ( 204 ) for generating ions in an elongated emission region (US Pat. 211 . 213 ); and an adhesion-promoting surface element ( 110h ), which on a surface ( 204a . 204b . 202o ) of the anode ( 204 ) and / or the cathode ( 202 ) is arranged; Where the primer surface element ( 110h ) to the emission area ( 211 . 213 ) and has a greater roughness than the surface ( 204a . 204b . 202o ) and / or as 3 μm. Ion beam source ( 100a . 100b . 200 ) according to claim 1, wherein the cathode ( 202 ) an emission gap ( 202s ), in which the emission range ( 211 . 213 ) is hineinerstreckt. Ion beam source ( 100a . 100b . 200 ) according to claim 1 or 2, wherein the cathode ( 202 ) has a greater magnetic permeability than the anode ( 204 ) and the primer ( 110h ) having; and / or wherein the magnetic permeability of the adhesion-promoting surface element ( 110h ) is substantially equal to or less than the permeability of the anode ( 204 ). An ion source according to any one of claims 1 to 3, wherein the primer surface element ( 110h ) has a metal and / or oxygen. Ion beam source ( 100a . 100b . 200 ) according to one of claims 1 to 4, wherein the primer surface element ( 110h ) at least one of the following: aluminum, titanium, chromium; an alloy comprising aluminum, chromium and / or titanium; and / or an oxygen to metal ratio of less than one. Ion beam source ( 100a . 100b . 200 ) according to one of claims 1 to 5, wherein a thickness ( 110d ) of the primer element ( 110h ) in one direction from the emission area ( 211 . 213 ) decreases away. Ion beam source ( 100a . 100b . 200 ) according to one of claims 1 to 6, wherein the adhesion-promoting surface element ( 110h ) is electrically conductive and / or an electrically conductive surface ( 204a . 204b . 202o ) having. Ion beam source ( 100a . 100b . 200 ) according to one of claims 1 to 7, wherein the adhesion-promoting surface element ( 110h ) comprises at least one of: an adhesion-promoting layer, a plate, a sheet and / or a film. Processing arrangement ( 500a . 500b ), comprising: a process chamber ( 502 ) for processing a substrate ( 504 ) in a processing area ( 803 ) of the process chamber ( 502 ); and an ion beam source ( 100a . 100b . 200 ) according to one of claims 1 to 8 for generating an ion beam ( 508 ) in the direction of the processing area ( 803 ). Procedure ( 1300 ) for treating an ion beam source ( 100a . 100b . 200 ), which is a cathode ( 202 ) and an anode ( 204 ), the method ( 1300 ) comprising: • providing ( 1302 ) of a surface ( 204a . 204b . 202o . 1202 ) the cathode ( 202 ) and / or the anode ( 204 ), the surface ( 204a . 204b . 202o . 1202 ) has a first roughness; and • application ( 1304 ) of a primer element ( 110h ) on the surface ( 204a . 204b . 202o . 1202 ) having a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 microns. Procedure ( 1300 ) according to claim 10, wherein the adhesion-promoting surface element comprises a sheet and / or a foil, which is fastened on the surface. Procedure ( 1300 ) according to claim 10 or 11, wherein the primer surface element has the second roughness before application. Procedure ( 1300 ) according to one of claims 10 to 12, wherein the application of the adhesion-promoting surface element ( 110h ), the surface ( 204a . 204b . 202o . 1202 ) with an adhesive layer ( 110h ), which has the second roughness. Procedure ( 1300 ) according to claim 13, wherein the coating ( 1304 ) using solid particles ( 1210P ), which is used for coating a plasma ( 1210 ) get abandoned; and / or wherein the coating ( 1304 ) has a thermal spray coating. Procedure ( 1300 ) according to claim 13 or 14, wherein the primer layer ( 110h ) is applied using electrochemical deposition. Procedure ( 1300 ) according to one of claims 13 to 15, further comprising: processing the adhesion promoting layer after coating to produce the second roughness.

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