DE102015207484B4 - High-voltage supply unit and circuit arrangement for generating a high voltage for a particle beam device and particle beam device - Google Patents

Abstract

High-voltage supply unit (500) for providing an output voltage (Ua) for a particle beam device (100, 200, 400), with - at least one first current source (501) for providing a first current (I1), - at least one first voltage source (502) which is connected to the first current source (501) via a first line (503),- at least one second current source (504) for providing a second current (I2), the second current source (504) being connected via a second line (506) to the first power source (501),- at least one second voltage source (505) which is connected to the second power source (504) via a third line (507),- at least one setting and/or control circuit (508) for setting and /or control of the output voltage (Ua), the setting and/or control circuit (508) being connected to the first power source (501) and/or the second power source (504) via an optical and/or electronic coupling device (510). and with- at least one feedback resistor (511) through which a third current (13) flows, wherein- the feedback resistor (511) is connected to the adjustment and/or control circuit (508) by a fourth line (512). - the feedback resistor (511) is connected to the first current source (501) by a fifth line (513, 506), - the feedback resistor (511) is connected to the second current source (504) by a sixth line (513, 506). , and wherein- the feedback resistor (511), the first current source (501) and the second current source (504) are connected to a high-voltage terminal (509) by a seventh line (514) through which a fourth current (14) flows.

Description

The invention relates to a high-voltage supply unit for providing an output voltage for a particle beam device, the particle beam device being designed, for example, as an electron beam device and/or as an ion beam device. Furthermore, the invention relates to a circuit arrangement for generating a high voltage for a particle beam device. In addition, the invention relates to a resistance circuit arrangement for the aforementioned high-voltage supply unit.

Electron beam devices, in particular a scanning electron microscope (also referred to below as SEM) and/or a transmission electron microscope (also referred to below as TEM), are used to examine objects (also referred to as samples) in order to obtain knowledge of the properties and behavior of the objects under certain conditions.

In an SEM, an electron beam (also referred to below as a primary electron beam) is generated by a beam generator and focused on an object to be examined by a beam guidance system. An objective lens is used for focusing. The primary electron beam is guided in a grid pattern over a surface of the object to be examined by means of a deflection device. The electrons of the primary electron beam interact with the object to be examined. As a result of the interaction, interaction particles and/or interaction radiation are produced. The interaction particles are, for example, electrons. In particular, electrons are emitted from the object - so-called secondary electrons - and electrons of the primary electron beam are scattered back - so-called backscattered electrons. The secondary electrons and backscattered electrons are detected with at least one particle detector. The particle detector generates detection signals which are used to generate an image of the object. An image of the object to be examined is thus obtained. The interaction radiation includes, for example, x-ray radiation and/or cathodoluminescence radiation. The interaction radiation is detected with at least one radiation detector, which generates detection signals. These detection signals are used, for example, to generate spectra with which properties of the object to be examined are determined.

In a TEM, a primary electron beam is also generated by means of a beam generator and focused on an object to be examined by means of a beam guidance system. The primary electron beam radiates through the object to be examined. When the primary electron beam passes through the object to be examined, the electrons of the primary electron beam interact with the material of the object to be examined. The electrons passing through the object to be examined are imaged by a system that has a lens, onto a fluorescent screen or onto a detector—for example in the form of a camera. The aforementioned system also includes, for example, a projection lens. The imaging can also take place in the scan mode of a TEM. Such a TEM is usually referred to as a STEM. In addition, it can be provided that electrons scattered back from the object to be examined and/or secondary electrons emitted by the object to be examined can be detected by means of a further detector in order to image an object to be examined.

It is known to integrate the function of a STEM and an SEM in a single particle beam device. With this particle beam device, it is thus possible to examine objects with an SEM function and/or with a STEM function.

Furthermore, it is known from the prior art to analyze and/or process an object in a particle beam device using electrons on the one hand and ions on the other. For example, an electron beam column is arranged on the particle beam device, which has the function of an SEM. In addition, an ion beam column is arranged on the particle beam device. Ions, which are used to process an object, are generated by means of an ion beam generator arranged in the ion beam column. For example, material of the object is removed during processing or a material is applied to the object. Additionally or alternatively, the ions are used for imaging. The electron beam column with the SEM function is used in particular for further examination of the processed or unprocessed object, but also for processing the object.

In the particle beam devices described above, the charged particles of the particle beam are accelerated to a specific energy. More precisely, it is intended to accelerate the electrons of the primary electron beam and/or the ions of the ion beam to a specific energy. This is explained below using electrons from a primary electron beam. The same applies to ions of an ion beam.

In both an SEM and a TEM, electrons are generated by means of a beam generator. The electrons exit the beam generator and form the primary electron beam. The electrons are accelerated to a potential due to a potential difference between the gun and an anode. For this purpose, the beam generator is usually supplied with a negative high voltage. In an SEM, for example, this is in the range from 0 V to (−50) kV compared to ground potential. In a TEM, for example, the high voltage is in the range from (-5) kV to (-4) MV compared to ground potential. In order to achieve a desired maximum resolution or a desired contrast and/or to adjust to a desired object thickness through which radiation can be transmitted and/or to limit the damage to the object, it is known to set the high voltage to a specific value. Furthermore, in order to achieve good resolution in the final images provided by the particle beam devices, it is desirable to keep the voltage applied to the beam generator as stable as possible. In other words, it is desirable that the high voltage provided by a high voltage power supply unit is not subject to fluctuations that would limit good resolution in final images.

A high-voltage supply unit for a particle beam device is known from the prior art, which has an AC voltage source which is set by an amplitude regulator above a desired setpoint value of the high voltage and whose output voltage is fed to a step-up transformer. The step-up transformer steps up the AC voltage. The output voltage of the step-up transformer is in turn fed to a Cockroft-Walton generator which multiplies the output voltage of the step-up transformer. The high voltage generated in this way is smoothed out via a filter element or several filter elements made up of resistors and capacitors. The high voltage smoothed in this way is fed to the amplitude controller via a measuring resistor. Fluctuations in the smoothed high voltage can be detected and fed to an amplifier via a capacitive divider consisting of a first capacitor and a second capacitor. The amplifier can provide an output signal which is fed to the amplitude controller and acts in phase opposition to the fluctuations of the smoothed high voltage. In this way, the fluctuations in the smoothed high voltage can be additionally dampened.

The high-voltage supply units used in the particle beam devices have the disadvantage that they only allow 1-quadrant operation. This means that the known high-voltage supply units can only provide voltage values that can be assigned to a single quadrant. This is also referred to as a unipolar voltage supply unit, which only allows a load current in one direction. This is based on the 1 explained in more detail. 1 FIG. 12 shows a schematic representation of a current-voltage behavior, in which the current is plotted on the abscissa axis and the voltage is plotted on the ordinate axis. The abscissa axis and the ordinate axis intersect at an origin. The origin separates negative current values (I _- ) from positive current values (I ₊ ). In addition, the origin separates negative voltage values (U _- ) from positive voltage values (U+). The abscissa axis and the ordinate axis separate 4 quadrants from one another, namely a first quadrant I, a second quadrant II, a third quadrant III and a fourth quadrant IV. The unipolar voltage supply unit only provides voltage values that can be assigned to one of the aforementioned quadrants. However, 4-quadrant operation is desirable, so that voltage values in all four quadrants (cf. 1 ) can be provided. This in 1 The rectangle shown is limited by a maximum achievable positive voltage U _+max , a maximum achievable negative voltage U _-max , a maximum achievable positive current I _+max and a maximum achievable negative current I _-max . The working range of a desired bipolar power supply unit should lie within the rectangle shown. Accordingly, a bipolar power supply unit is desired which allows load current in two directions. In further forms of application it is desirable to provide at least 2-quadrant operation with which a unipolar voltage supply unit can be formed.

With regard to the prior art is also on the DE 28 44 183 A1 , the U.S. 2002/0145396 A1 , U.S. 5,773,784 A the U.S. 4,427,886 A the the DE 697 09 817 T2 , the U.S. 2009/0295269 A1 as well as the DE 10 2006 035 793 A1 referred.

The invention is based on the object of specifying a high-voltage supply unit and a circuit arrangement for generating a high voltage for a particle beam device and a particle beam device with a high-voltage supply unit that enable 4-quadrant operation or 2-quadrant operation.

According to the invention, this object is achieved with a high-voltage supply unit for providing an output voltage for a particle beam device with the features of claim 1. A circuit arrangement for generating a high voltage for a particle beam device is given by the features of claim 12. Furthermore, a resistance circuit arrangement for a high-voltage supply unit of a particle beam device is given by the features of claim 15. A particle beam device according to the invention is given by the features of claim 21. Further features of the invention emerge from the following description, the attached claims and/or the attached drawings.

The high-voltage supply unit according to the invention is intended to provide an output voltage for a particle beam device. The output voltage is, for example, a DC voltage in the range from (-300) kV to 300 kV. However, the invention is not limited to the aforementioned area. Rather, the invention relates to any suitable range of output voltage.

The high-voltage supply unit according to the invention has at least one first current source for providing a first current. Furthermore, it has at least one first voltage source, which is connected to the first current source via a first line. The first voltage source provides an operating voltage for the first current source. The high-voltage supply unit also has at least one second current source for providing a second current, the second current source being connected to the first current source via a second line. At least one second voltage source is connected to the second current source via a third line in order to supply the second current source with an operating voltage. In one embodiment of the invention, the first voltage source and the second voltage source are designed as different voltage sources. In a further embodiment of the invention, the first voltage source and the second voltage source are designed as a single voltage source. In other words, in this exemplary embodiment, the single voltage source forms both the first voltage source and the second voltage source. The high-voltage supply unit according to the invention also has at least one setting and/or control circuit for setting and/or controlling the output voltage. The output voltage is a high voltage, which is made available to at least one high-voltage assembly of the particle beam device. In other words, the output voltage is applied to at least one high-voltage assembly of the particle beam device.

The high-voltage supply unit according to the invention also has an optical and/or electronic coupling device which connects the adjustment and/or control circuit to the first power source and/or the second power source. In one embodiment of the invention, the coupling device makes it possible to set and/or control the first current source and/or the second current source using signals from the setting and/or control circuit. In particular, provision is therefore made for the second current to be set and/or controlled in the aforementioned embodiment by means of the signals of the setting and/or control circuit.

Furthermore, at least one feedback resistor is provided in the high-voltage supply unit according to the invention. The feedback resistor is connected to the setting and/or control loop, the first current source and the second current source via lines. More precisely, the feedback resistor is connected to the adjustment and/or regulation circuit by a fourth line. Furthermore, the feedback resistor is connected to the first current source through a fifth line. In addition, the feedback resistor is connected to the second current source through a sixth line. A third current flows through the feedback resistor. The feedback resistor, the first current source and the second current source are also connected to a high-voltage terminal by a seventh line through which a fourth current flows. At least two of the aforementioned lines can be identical or at least partially identical.

The invention is based on the fact that it was recognized that a bipolar voltage supply unit can be formed by means of a unipolar first current source and a unipolar second current source, which allows a load current in two directions. In other words, the high-voltage supply unit according to the invention can be operated in 4-quadrant operation. In 4-quadrant operation, the first voltage source and the second voltage source are designed as different voltage sources. If the first voltage source and the second voltage source are designed as a single voltage source, then a unipolar voltage supply unit is provided that enables 2-quadrant operation.

wobei I₁ der erste Strom, I₂ der zweite Strom, I₃ der dritte Strom und I₄ der vierte Strom sind.For example, the first current source is used to specify a maximum positive current I _+max that is to be achieved in the first quadrant I and the fourth quadrant IV (cf. 1 ). For example, the second power source, which is connected in series with the first power source, ensures 4-quadrant operation of the high-voltage power supply unit according to the invention. The second current source determines the absolute maximum negative current I _-max in the second quadrant II and the third quadrant III (cf. 1 ). In the case of the invention, provision is made in particular for the output voltage to be corrected via the third current flowing in the feedback resistor by means of the adjustment and/or control circuit. The second current is then set and controlled by means of the setting and/or control circuit in such a way that, for example, the following applies: $${\text{I}}_2={\text{I}}_1-{\text{I}}_3-{\text{I}}_4$$

where I ₁ is the first current, I ₂ is the second current, I ₃ is the third current and I ₄ is the fourth current.

In one embodiment of the high-voltage supply unit according to the invention, it is additionally or alternatively provided that the first current source is designed as an adjustable current source and that the second current source is designed as a constant current source. The setting and/or control circuit then acts on the first current source in such a way that the first current can be set. As an alternative to this, provision is made for the first current source to be in the form of a constant current source and for the second current source to be in the form of an adjustable current source. Again as an alternative to this, it is provided that both the first current source and the second current source are each designed as an adjustable current source. The adjustment and/or control circuit then acts both on the first current source and on the second current source in such a way that both the first current and the second current can be adjusted. With the same maximum output current Imax, this reduces the power losses both in the two current sources and in the high-voltage supply unit.

In yet another embodiment of the high-voltage supply unit according to the invention, provision is additionally or alternatively made for the feedback resistor to be in the form of a chain of resistors. For example, it is provided that the feedback resistor has n resistors, where n is an integer and the n resistors are connected in series. For example, n is an integer in the range from 2 to 800, for example in the range from 200 to 600 or for example in the range from 300 to 500. In one embodiment, n is 400, for example. In particular, it is provided that the n resistors are of identical design and each have an identical resistance value.

In a further exemplary embodiment, it is provided that the feedback resistor additionally has a holder, for example a printed circuit board or free wiring, on which the n resistors are arranged. In addition, the feedback resistor has a cooling unit. The cooling unit is thermally coupled to the n resistors. In other words, there is a temperature flow between the n resistors and the cooling unit. In particular, it is provided that the cooling unit has an identical thermal resistance to each of the n resistors. In a further embodiment of the high-voltage supply unit according to the invention, it is additionally or alternatively provided that at least one thermally conductive insulation is arranged between the holder and the cooling unit. The thermally conductive insulation is not electrically conductive and is therefore called insulation. But it is thermally conductive. The thermally conductive insulation is designed, for example, as a casting, in particular in the form of a compound made of epoxy or polyurethane, or in the form of an insulating liquid. In addition or as an alternative to this, the thermally conductive insulation can also be made of silicone. Furthermore, it is additionally or alternatively provided that the cooling unit is arranged on the thermally conductive insulation in such a way that the cooling unit touches the thermally conductive insulation. For example, it is also envisaged that the thermally conductive insulation touches each of the n resistors. All of the above embodiments ensure that the n resistors have a substantially identical thermal resistance to the cooling unit. Accordingly, the same temperature difference between the n resistors and the cooling unit occurs for all n resistors. The temperature coefficient of resistors (i.e. the dependence of the resistance value on the temperature) statistically scatters around an average temperature coefficient. In the case of precision resistors, this scattering of the temperature coefficients can be very small, especially small compared to the average temperature coefficient. The same temperature in the n resistors described above avoids a change or drift of a resistor divider ratio of the resistor chain due to the average temperature coefficient and a change in the common temperature of the n resistors. The output voltage therefore remains more stable and is hardly subject to any measurable fluctuations or drifts.

In a further embodiment of the invention, it is additionally or alternatively provided that the voltage coefficients of the n resistors are essentially identical. The voltage coefficient of a resistor describes the dependence of the resistance on an applied voltage. As already mentioned above, provision is additionally or alternatively made for each of the n resistors to be of identical design. As will be explained in detail further below, a partial voltage of the feedback resistor is then independent of the voltage coefficients of the n resistors. So the feedback resistor is basically a voltage divider that behaves linearly up to the maximum voltage of a partial resistor (i.e. one of the n resistors) multiplied by the number of n resistors. If the maximum voltage of a partial resistor is 100 V and the number of resistors is 400, then linearity is given in a voltage range up to 40 kV. It is explicitly pointed out that the aforementioned numerical example is only to be understood as an example and not as a restriction.

In one embodiment of the high-voltage supply unit according to the invention, it is additionally or alternatively provided that the first power source and the second power source are connected in series. In addition or as an alternative to this, the output voltage of the high-voltage supply unit according to the invention is bipolar.

In a further embodiment of the high-voltage supply unit according to the invention, provision is additionally or alternatively made for the high-voltage supply unit to have at least one feedback unit with at least one capacitive voltage divider, the feedback unit being connected to the feedback resistor. For example, it is provided that the feedback unit is connected in parallel with the feedback resistor. This makes it possible to measure a change in the output voltage more quickly and thus to determine the third current flowing through the feedback resistor more quickly. This makes it possible, for example, to use the setting and/or control circuit to set and/or control the second current of the second current source more quickly. Furthermore, the feedback unit makes it possible to reduce the residual ripple and noise of the output voltage due to higher sensitivity when determining the third current. The term residual ripple is explained below. The DC voltage is generated, for example, by rectifying an AC voltage. This often creates a voltage that is a superimposition of a DC voltage and an AC voltage. In order to suppress the AC voltage as far as possible, smoothing capacitors are used, for example, which essentially smooth the voltage, ie reduce the proportion of the AC voltage. The proportion of AC voltage in the voltage after smoothing is referred to as residual ripple. This can be reduced with the above embodiment.

In a further embodiment it is provided that the capacitive voltage divider has a first capacitor and a second capacitor, the second capacitor having zero capacitance. This then corresponds to a divider ratio of 1. This is explained in more detail below.

The invention also relates to a circuit arrangement for generating a high voltage for a particle beam device. The circuit arrangement according to the invention has at least one high-voltage supply unit for providing an output voltage. The high-voltage supply unit can have any configuration. In one embodiment, the high-voltage supply unit is, for example, a high-voltage supply unit with at least one of the features mentioned above or below or with a combination of at least two of the features mentioned above or below. In an alternative embodiment, the high-voltage supply unit is designed as a high-voltage supply unit in 1-quadrant operation or in 2-quadrant operation.

In addition, the circuit arrangement according to the invention has at least one noise suppression unit, which is connected via at least one connecting line to the high-voltage supply unit for conducting the output voltage of the high-voltage supply unit into the noise suppression unit. The noise suppression unit comprises at least one noise measurement device for detecting noise in the output voltage and at least one amplifier/filter unit, the amplifier/filter unit being connected to the noise measurement device by an eighth line. In addition, the noise suppression unit comprises at least one control circuit (hereinafter referred to as noise control circuit), the noise control circuit being connected to the amplifier/filter unit by a ninth line and the noise control circuit being connected to the noise measurement device by a tenth line. In addition, the noise suppression unit comprises at least one high-voltage connection to which the high voltage is applied, the high-voltage connection being connected to the noise control circuit by an eleventh line.

The aforementioned circuit arrangement is based on the finding that the noise of the high-voltage supply unit can be improved by suppressing the noise of the high-voltage supply unit at the output terminal of the high-voltage supply unit. In other words, the noise is suppressed using the output voltage - i.e. the high voltage - which is recorded and suppressed with a measuring and control circuit. The circuit arrangement according to the invention with the noise suppression unit has the advantage that the noise suppression does not take place in the high-voltage supply unit and in its adjustment and/or control circuit, but basically acts directly on the output voltage of the high-voltage supply unit, for example it is added to the output voltage. It has been shown that noise suppression is then particularly simple and effective.

In one embodiment of the circuit arrangement according to the invention, it is additionally or alternatively provided that the noise measuring device comprises a voltage divider. For example, the voltage divider is designed as a capacitive voltage divider. In one embodiment, one of the capacitors of the capacitive voltage divider may also have zero capacitance. This then corresponds to a divider ratio of 1. This is explained in more detail below.

The invention also relates to a resistance circuit arrangement for a high-voltage supply unit of a particle beam device. For example, the high-voltage supply unit is a high-voltage supply unit with at least one of the features mentioned above or below or with a combination of at least two of the features mentioned above or below. The resistance circuit arrangement according to the invention has n resistances, where n is an integer and the n resistances are connected in series. For example, n is an integer in the range from 2 to 800, for example in the range from 200 to 600 or for example in the range from 300 to 500. In one embodiment, n is 400, for example. In particular, it is provided that the n resistors are of identical design and each have an identical resistance value.

Furthermore, the resistance circuit arrangement according to the invention has a mount, for example in the form of a printed circuit board or in the form of free wiring, on which the n resistors are arranged. In addition, the resistance circuit arrangement according to the invention has a cooling unit. The cooling unit is thermally coupled to the n resistors. In other words, there is a temperature flow between the n resistors and the cooling unit. In particular, it is provided that the cooling unit has an identical thermal resistance to each of the n resistors. In a further embodiment of the resistance circuit arrangement according to the invention, it is additionally or alternatively provided that at least one thermally conductive insulation is arranged between the holder and the cooling unit. The thermally conductive insulation is not electrically conductive and is therefore called insulation. But it is thermally conductive. The thermally conductive insulation is designed, for example, as a casting, in particular in the form of a compound made of epoxy or polyurethane, or in the form of an insulating liquid. In addition or as an alternative to this, the thermally conductive insulation can also be made of silicone.

Furthermore, it is additionally or alternatively provided that the cooling unit is arranged on the thermally conductive insulation in such a way that the cooling unit touches the thermally conductive insulation. For example, it is also envisaged that the thermally conductive insulation touches each of the n resistors. All of the above embodiments ensure that the n resistors have a substantially identical thermal resistance to the cooling unit. Accordingly, the same temperature difference between the n resistors and the cooling unit occurs for all n resistors. This avoids a change or drift of a resistance divider ratio due to the average temperature coefficient and a change in the common temperature of the n resistors.

In a further embodiment, provision is additionally or alternatively made for the voltage coefficients of the n resistors to be essentially identical. The voltage coefficient of a resistor describes the dependence of the resistance on an applied voltage. In this exemplary embodiment, it is additionally or alternatively provided that each of the n resistors is of identical design and in particular has an identical resistance value. As will be explained in detail further below, a partial voltage of the series connection of the n resistors is then independent of the voltage coefficients of the n resistors. Thus, the series circuit is basically a voltage divider that behaves linearly up to the maximum voltage of a partial resistor multiplied by the number n of resistors. In this regard, reference is made to the statements made above, which also apply here.

The invention also relates to a particle beam device for analyzing and/or processing an object. The particle beam device has at least one beam generator for generating a particle beam with charged particles and at least one objective lens for focusing the particle beam onto the object. Electrons or ions, for example, are provided as charged particles. In addition, the particle beam device according to the invention is provided with at least one detector for detecting interaction particles and/or interaction radiation, the interaction particles and/or the interaction radiation arising as a result of an interaction of the particle beam with the object. The interaction particles are, for example, electrons. In particular, electrons are emitted from the object (the so-called secondary electrons). Electrons of the primary electron beam that are scattered on the object are also detected, for example. In particular, provision is made for detecting electrons of the primary electron beam that are backscattered by the object (the so-called backscattered electrons). For example, cathodoluminescent light or X-rays are detected as interaction radiation.

The particle beam device according to the invention also has at least one high-voltage assembly to which a high voltage is applied. A high-voltage assembly is understood to be any assembly of a particle beam device to which a high voltage is or can be applied. For example, this is/are the beam generator of the particle beam device and/or an electrode of the particle beam device. The particle beam device according to the invention also has a high-voltage supply unit with at least one of the features mentioned above or below or with a combination of at least two of the features mentioned above or below. In addition or as an alternative to this, the particle beam device according to the invention has a circuit arrangement with at least one of the features mentioned above or below or with a combination of at least two of the features mentioned above or below. In addition or as an alternative to this, the particle beam device according to the invention has a resistance circuit arrangement with at least one of the features mentioned above or below or with a combination of at least two of the features mentioned above or below.

In particular, it is provided that the particle beam device according to the invention is designed as an electron beam device and/or as an ion beam device. For example, the electron beam device is designed as an electron beam device with correction elements for correcting imaging errors, for example chromatic and/or spherical aberrations.

• 1 zeigt eine schematische Darstellung eines Strom-Spannungs-Verhältnisses einer Spannungsversorgungseinheit;
• 2 zeigt eine schematische Darstellung eines Teilchenstrahlgeräts in Form eines SEM;
• 3 zeigt eine schematische Darstellung eines Kombinationsgeräts mit einem Elektronenstrahlgerät und einem lonenstrahlgerät;
• 4 zeigt eine schematische Darstellung eines weiteren Teilchenstrahlgeräts mit einem System zur Korrektur von chromatischer Aberration und sphärischer Aberration;
• 5 zeigt eine weitere schematische Darstellung des Teilchenstrahlgeräts gemäß 4;
• 6 zeigt ein schematisches Blockschaltbild einer Hochspannungsversorgungseinheit;
• 7 zeigt ein schematisches Blockschaltbild einer Ausführungsform der Hochspannungsversorgungseinheit;
• 8 zeigt eine weitere Ausführungsform der Hochspannungsversorgungseinheit;
• 9 zeigt eine schematische Teilansicht einer Ausführungsform eines Rückführwiderstands;
• 10 zeigt eine schematische Seitenansicht des Rückführwiderstands gemäß 9;
• 10A zeigt eine weitere Ansicht des Rückführwiderstands gemäß 9;
• 11 zeigt eine schematische Darstellung eines Schaltbildes einer Hochspannungsversorgungseinheit mit einer Rauschunterdrückungseinheit;
• 12 zeigt eine schematische Darstellung eines Schaltbildes einer weiteren Hochspannungsversorgungseinheit mit einer Rauschunterdrückungseinheit; sowie
• 13 zeigt eine schematische Darstellung eines Schaltbildes einer noch weiteren Hochspannungsversorgungseinheit mit einer Rauschunterdrückungseinheit.

Further practical embodiments and advantages of the invention are described below in connection with the drawings.

• 1 shows a schematic representation of a current-voltage ratio of a voltage supply unit;
• 2 shows a schematic representation of a particle beam device in the form of an SEM;
• 3 shows a schematic representation of a combination device with an electron beam device and an ion beam device;
• 4 shows a schematic representation of a further particle beam device with a system for correcting chromatic aberration and spherical aberration;
• 5 shows a further schematic representation of the particle beam device according to FIG 4 ;
• 6 shows a schematic block diagram of a high-voltage supply unit;
• 7 shows a schematic block diagram of an embodiment of the high-voltage supply unit;
• 8th shows another embodiment of the high-voltage power supply unit;
• 9 Figure 12 shows a schematic partial view of an embodiment of a feedback resistor;
• 10 FIG. 12 shows a schematic side view of the feedback resistor according to FIG 9 ;
• 10A shows another view of the feedback resistor according to FIG 9 ;
• 11 Fig. 12 shows a schematic representation of a circuit diagram of a high-voltage power supply unit with a noise suppression unit;
• 12 shows a schematic representation of a circuit diagram of a further high-voltage supply unit with a noise suppression unit; such as
• 13 FIG. 12 shows a schematic representation of a circuit diagram of yet another high-voltage power supply unit with a noise suppression unit.

The invention will now be explained in more detail using particle beam devices in the form of an SEM and in the form of a combination device which has an electron beam column and an ion beam column. It is expressly pointed out that the invention can be used in any particle beam device, in particular in any electron beam device and/or any ion beam device.

2 shows a schematic representation of an SEM 100. The SEM 100 has a first beam generator in the form of an electron source 101, which is designed as a cathode. Furthermore, the SEM 100 is provided with an extraction electrode 102 and an anode 103 which is placed on one end of a beam guiding tube 104 of the SEM 100 . For example, the electron source 101 is designed as a thermal field emitter. However, the invention is not restricted to such an electron source 101 . Rather, any electron source can be used.

The electron source 101 is at a high voltage potential. Electrons exiting the electron source 101 form a primary electron beam. The electrons are accelerated to anode potential due to a potential difference between the electron source 101 and the anode 103 . In the exemplary embodiment illustrated here, the anode potential is (-5) kV to 20 kV compared to a ground potential of a housing of a sample chamber 120, for example 5 kV to 15 kV, in particular 8 kV. Alternatively, it could also be at ground potential.

Two condenser lenses are arranged on the beam guiding tube 104, namely a first condenser lens 105 and a second condenser lens 106. Starting from the electron source 101 in the direction of a first objective lens 107, first the first condenser lens 105 and then the second condenser lens 106 are arranged. It is explicitly pointed out that further embodiments of the SEM 100 can only have a single condenser lens. A first diaphragm unit 108 is arranged between the anode 103 and the first condenser lens 105 . The first diaphragm unit 108, together with the anode 103 and the beam guidance tube 104, is at a high-voltage potential, namely the potential of the anode 103 or at ground. The first aperture unit 108 has a plurality of first aperture openings 108A, one of which is in 2 is shown. Each of the plurality of first apertures 108A has a different aperture diameter. It is possible to adjust a desired first diaphragm opening 108A to an optical axis OA of the SEM 100 by means of an adjustment mechanism (not shown). It is explicitly pointed out that the first screen unit 108 can alternatively also have only a single first screen opening 108A. In this case, an adjustment mechanism cannot be provided. In this case, the first diaphragm unit 108 is stationary. A stationary second diaphragm unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106 . In an alternative exemplary embodiment, the second panel unit 109 is designed to be displaceable.

The first objective lens 107 has pole shoes 110 in which a bore is formed. The beam guiding tube 104 is guided through this bore. Coils 111 are also arranged in the pole shoes 110 . This is discussed in more detail below.

An electrostatic deceleration device is arranged in a lower region of the beam guiding tube 104 . This has a single electrode 112 and a tubular electrode 113 . The tube electrode 113 is arranged at an end of the beam guidance tube 104 which faces an object 114 . The tube electrode 113 lies together with the beam guiding tube 104 at the potential of the anode 103, while the individual electrode 112 and the object 114 lie at a potential which is lower than the potential of the anode 103. In the present case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be decelerated to a desired energy that is required for examining the object 114. However, the object 114 and the individual electrode 112 can also be at different potentials and different from ground. In this way, on the one hand, the location of the deceleration of the primary electrons can be shifted, and on the other hand, the trajectories of the secondary electrons and the backscattered electrons can be influenced, which will be discussed below.

The SEM 100 also has a raster device 115 by which the primary electron beam can be deflected and rastered over the object 114 . The electrons of the primary electron beam occur thereby interacting with the object 114. As a result of the interaction, interaction particles and/or interaction radiation arise or arise, which are detected. In particular, electrons are emitted from the surface of the object 114 as interaction particles—so-called secondary electrons—or electrons of the primary electron beam are scattered back—so-called backscattered electrons.

A detector arrangement, which has a first detector 116 and a second detector 117, is arranged in the beam guidance tube 104 to detect the secondary electrons and/or the backscattered electrons. The first detector 116 is arranged along the optical axis OA on the source side, while the second detector 117 is arranged on the object side along the optical axis OA in the beam guiding tube 104 . The first detector 116 and the second detector 117 are offset from one another in the direction of the optical axis OA of the SEM 100 . Both the first detector 116 and the second detector 117 each have a passage opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guiding tube 104. The optical axis OA of the SEM 100 runs through the respective through openings.

The second detector 117 serves to detect those electrons which emerge from the object 114 at a relatively large solid angle. These are primarily secondary electrons. Electrons scattered back at the object 114 - i.e. backscattered electrons - which, compared to the secondary electrons, have a relatively high kinetic energy when exiting the object 114, are only detected to a small extent by the second detector 117, since the backscattered electrons are in the direction of the optical Axis OA seen relatively close to the second detector 117 from the first objective lens 107 to the optical axis OA and thus can pass through the passage opening of the second detector 117. The first detector 116 is therefore essentially used to detect the backscattered electrons.

In a further embodiment of the SEM 100, the first detector 116 can additionally or alternatively be formed with a grid electrode (not shown). The grid electrode is arranged on the side of the first detector 116 facing the object 114 . The grid electrode has a negative potential with respect to the potential of the beam guidance tube 104 such that only backscattered electrons with a high energy reach the first detector 116 through the grid electrode. In addition or as an alternative, the second detector 117 has a grid electrode which is designed analogously to the aforementioned grid electrode of the first detector 116 and has an analogous function.

The detection signals generated by the first detector 116 and the second detector 117 are used to generate an image or images of the surface of the object 114 . It is explicitly pointed out that the diaphragm openings of the first diaphragm unit 108 and the second diaphragm unit 109 and the passage openings of the first detector 116 and the second detector 117 are shown in an exaggerated manner. The passage opening of the first detector 116 and of the second detector 117 has a longitudinal extent in the range from 0.5 mm to 5 mm, seen perpendicularly to the optical axis OA. For example, they are circular and have a diameter in the range of 1 mm to 3 mm.

In the exemplary embodiment shown here, the second diaphragm unit 109 is designed as a perforated diaphragm and is provided with a second diaphragm opening 118 for the passage of the primary electron beam, which has an extension in the range from 5 μm to 500 μm, for example 35 μm, viewed perpendicularly to the optical axis OA. In a further exemplary embodiment, the second diaphragm unit 109 can also be designed with a plurality of second diaphragm openings 118 which can be mechanically shifted relative to the primary electron beam or which can be achieved by using electrical and/or magnetic deflection elements from the primary electron beam. The second diaphragm unit 109 is designed as a pressure stage diaphragm. It separates a first area, in which the electron source 101 is arranged and in which an ultra-high vacuum prevails (10 ^-6 Pa to 10 ^-10 Pa), from a second area, which has a high vacuum (10 ^-1 Pa to 10 ^-5 Pa ). The second area is the intermediate pressure area of the beam guiding tube 104 which leads to the sample chamber 120 .

In addition to image generation, the SEM 100 can be used to carry out other examination methods. This includes the so-called EBSD method (“Electron Backscattered Diffraction”), in which diffraction patterns of scattered electrons are determined. A further examination method is based on the detection of cathodoluminescence light which emerges from the object 114 when the primary electron beam impinges on the object 114 . Other examination methods are, for example, examination using energy-dispersive X-ray spectroscopy (EDX) and examination using wavelength-dispersive X-ray spectroscopy (WDX). At least a third detector 119 provided, which is arranged in the region of the sample chamber 120, for example between the beam guidance tube 104 and the object 114 to the side of the object 114. The third detector 119 can also be an Everhart-Thornley detector, which is usually arranged in the sample chamber 120 with the SEM 100 . The SEM 100 also has a fourth detector 121 which is arranged in the sample chamber 120 . More specifically, the fourth detector 121 is arranged behind the object 114 as viewed from the electron source 101 along the optical axis OA. The primary electron beam radiates through the object 114 to be examined. When the primary electron beam passes through the object 114 to be examined, the electrons of the primary electron beam interact with the material of the object 114 to be examined. The electrons passing through the object to be examined 114 are detected by the fourth detector 121 .

3 shows a particle beam device in the form of a combination device 200. The combination device 200 has two particle beam columns. On the one hand, the combination device 200 is provided with the SEM 100, as shown in FIG 2 is already shown, but without the sample chamber 120. Rather, the SEM 100 is arranged on a sample chamber 201. The SEM 100 serves to generate a first particle beam, namely the primary electron beam already described above. On the other hand, the combination device 200 is provided with an ion beam device 300 which is also arranged on the sample chamber 201 .

The SEM 100 is arranged vertically with respect to the sample chamber 201 . In contrast, the ion beam device 300 is arranged inclined at an angle of approximately 50° to the SEM 100 . It has a second beam generator in the form of an ion beam generator 301 . The ion beam generator 301 generates ions that form a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302, which is at a predeterminable potential. The second particle beam then passes through ion optics of the ion beam device 300 , the ion optics having a condenser lens 303 and a second objective lens 304 . Finally, the second objective lens 304 produces an ion probe that is focused onto the object 114 placed on a sample holder 305 .

An adjustable diaphragm 306, a first electrode arrangement 307 and a second electrode arrangement 308 are arranged above the objective lens 304 (ie in the direction of the ion beam generator 301), the first electrode arrangement 307 and the second electrode arrangement 308 being designed as grid electrodes. The second particle beam is scanned over the surface of the object 114 by means of the first electrode arrangement 307 and the second electrode arrangement 308, with the first electrode arrangement 307 acting in a first direction and the second electrode arrangement 308 in a second direction, which is opposite to the first direction. This means that the rastering takes place in the x-direction, for example. The scanning in a y-direction perpendicular thereto is carried out by further electrodes (not shown) rotated by 90° on the first electrode arrangement 307 and on the second electrode arrangement 308.

The one in the 3 The distances shown between the individual units of the combination device 200 are exaggerated in order to show the individual units of the combination device 200 better.

4 is a schematic representation of a further embodiment of a particle beam device according to the invention. This exemplary embodiment of the particle beam device is provided with reference number 400 and includes a mirror corrector for correcting, for example, chromatic and spherical aberration. The particle beam device 400 includes a particle beam column 401, which is designed as an electron beam column and essentially corresponds to an electron beam column of a corrected SEM. However, the particle beam device 400 is not limited to an SEM with a mirror corrector. Rather, the particle beam device can include any type of correction units.

The particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403 and an anode 404. For example, the electron source 402 is designed as a thermal field emitter. Electrons exiting electron source 402 are accelerated toward anode 404 due to a potential difference between electron source 402 and anode 404 . Accordingly, a particle beam is formed in the form of an electron beam along a first optical axis OA1.

The particle beam is guided along a beam path corresponding to the first optical axis OA1 after the particle beam I emerges from the electron source 402 . To guide the part For the optical beam Is, a first electrostatic lens 405, a second electrostatic lens 406 and a third electrostatic lens 407 are used.

Furthermore, the particle beam is adjusted along the beam path using a beam guiding device. The beam guidance device of this exemplary embodiment comprises a source adjustment unit with two magnetic deflection units 408 which are arranged along the first optical axis OA1. In addition, the particle beam device 400 includes electrostatic beam deflection units. A first electrostatic beam deflector 409 , which in one embodiment is a quadrupole, is positioned between the second electrostatic lens 406 and the third electrostatic lens 407 . The first electrostatic beam deflection unit 409 is also arranged behind the magnetic deflection units 408 . A first multipole unit 409A in the form of a first magnetic deflection unit is arranged on one side of the first electrostatic beam deflection unit 409 . In addition, a second multipole unit 409B in the form of a second magnetic deflection unit is arranged on the other side of the first electrostatic beam deflection unit 409 . The first electrostatic beam deflecting unit 409, the first multipole unit 409A and the second multipole unit 409B are adjusted to adjust the particle beam with respect to the axis of the third electrostatic lens 407 and the entrance window of a beam deflector 410. The first electrostatic beam deflection unit 409, the first multipole unit 409A and the second multipole unit 409B can work together like a Wien filter. Furthermore, a further magnetic deflection element 432 is arranged at the entrance of the beam deflection device 410 .

The beam deflection device 410 is used as a particle beam deflector, which deflects the particle beam in a specific manner. The beam deflector 410 includes a plurality of magnetic sectors, namely a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F and a seventh magnetic sector 411G . The particle beam enters the beam deflector 410 along the first optical axis OA1 and is deflected by the beam deflector 410 in the direction of a second optical axis OA2. Beam deflection is performed by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C. The second optical axis OA2 can be aligned at an angle of 30° to 120° to the first optical axis OA1. The beam deflection device 410 also deflects the particle beam, which is guided along the second optical axis OA2, specifically in the direction of a third optical axis OA3. Beam deflection is provided by third magnetic sector 411C, fourth magnetic sector 411D and fifth magnetic sector 411E. In the embodiment in 4 the deflection from the second optical axis OA2 to the third optical axis OA3 is provided by deflecting the particle beam at an angle of 90°. The third optical axis OA3 thus runs coaxially with the first optical axis OA1. However, it is pointed out that the particle beam device 400 according to the invention described here is not limited to a deflection angle of 90°. Rather, any suitable deflection angle can be selected by the beam deflection device 410, for example 70° or 110°, so that the first optical axis OA1 does not run coaxially with the third optical axis OA3. For further details of the beam deflector 410, reference is made to FIG EP 1 388 882 A2 .

After the particle beam is deflected by the first magnetic sector 411A, the second magnetic sector 411B and the third magnetic sector 411C, the particle beam is guided along the second optical axis OA2. The particle beam is guided to an electrostatic mirror 414 and passes on the way to the electrostatic mirror 414 along a fourth electrostatic lens 415, a third multipole unit 416A in the form of a magnetic deflector, a second electrostatic beam deflector 416, a third electrostatic beam deflector 417 and a fourth Multipole unit 416B in the form of a magnetic deflection unit. The electrostatic mirror 414 includes a first mirror electrode 413A, a second mirror electrode 413B and a third mirror electrode 413C. Electrons of the particle beam, which are reflected back at the electrostatic mirror 414, again run along the second optical axis OA2 and enter the beam deflection device 410 again. They are then deflected to the third optical axis OA3 by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E.

The electrons of the particle beam emerge from the beam deflection device 410 and are guided along the third optical axis OA3 to the object 425 that is to be examined. On the way to the object 425, the particle beam is guided to a fifth electrostatic lens 418, a lower beam guiding tube 420, a fifth multipole unit 418A, a sixth multipole unit 418B and an objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. the particle The beam is decelerated or accelerated by the fifth electrostatic lens 418 to an electrical potential of the lower beam guiding tube 420.

The particle beam is focused by the objective lens 421 in a focal plane in which the object 425 is arranged. The object 425 is arranged on a movable sample table 424 . The movable sample table 424 is arranged in a sample chamber 426 of the particle beam device 400 .

The objective lens 421 can be formed as a combination of a magnetic lens 422 and a sixth electrostatic lens 423 . The end of the lower beam guiding tube 420 can also be an electrode of an electrostatic lens. After they emerge from the lower beam guiding tube 420, particles of the particle beam device 400 are decelerated to a potential of the object 425, which is arranged on the sample table 424. The objective lens 421 is not limited to a combination of the magnetic lens 422 and the sixth electrostatic lens 423. Rather, the objective lens 421 can take any suitable form. For example, the objective lens can also be designed as a purely magnetic lens or only as a purely electrostatic lens.

The particle beam, which is focused on the object 425, interacts with the object 425. Interaction particles are generated. In particular, secondary electrons are emitted from the object 425 or backscattered electrons are backscattered on the object 425 . The secondary electrons and/or the backscattered electrons are accelerated again and guided into the lower beam guiding tube 420 along the third optical axis OA3. In particular, the paths of the secondary electrons and the backscattered electrons run in the opposite direction to the particle beam on the path of the particle beam.

The particle beam device 400 includes a first detector 419, which is arranged along the beam path between the beam deflection device 410 and the objective lens 421. Secondary electrons traveling in directions oriented at a large angle with respect to the third optical axis OA<b>3 are detected by the first detector 419 . Backscattered electrons and secondary electrons which have a small axial distance with respect to the third optical axis OA3 at the position of the first detector 419 - i.e. backscattered electrons and secondary electrons which have a small distance from the third optical axis OA3 at the position of the first detector 419 - enter the Beam deflector 410 and are deflected by the fifth magnetic sector 411E, the sixth magnetic sector 411F and the seventh magnetic sector 411G along a detection beam path 427 to a second detector 428. The deflection angle is 90° or 110°, for example. The second detector 428 generates detection signals based on the detected backscattered electrons and/or secondary electrons.

The first detector 419 generates detection signals largely generated by emitted secondary electrons. The detection signals generated by the first detector 419 and the second detector 428 are fed to an electronics unit (not shown) and are used to obtain information about the properties of the interaction region of the focused particle beam with the object 425 . In particular, the focused particle beam is scanned over the object 425 using a scanning device 429 . The detection signals generated by the first detector 419 and the second detector 428 can then be used to generate an image of the scanned area of the object 425 and to display it on a display unit, for example a monitor.

A filter electrode 430 can be placed in front of the second detector 428 . The filter electrode 430 is used, for example, to separate secondary electrons from the backscattered electrons due to the difference in their kinetic energy.

5 shows again the particle beam device 400 according to FIG 4 . Identical components are provided with the same reference symbols. For a better overview, the 5 in comparison to 4 numerous reference symbols omitted. The anode 404 is connected to an upper beam guiding tube 431 . Accordingly, the upper beam guiding tube 431 is at the same potential together with the anode 404, for example the anode potential. The upper beam guiding tube 431 extends from the anode 404 to the fifth electrostatic lens 418. The electrostatic field of the fifth electrostatic lens 418 is determined by the potential of the anode 404, on which the electrode in the form of the upper beam guiding tube 431 lies, and by the potential , on which an electrode 433 lies, which is electrically connected to the lower beam guiding tube 420 (cf. 4 ). Another beam guiding tube 431A is arranged in the area of the electrostatic mirror 414 . The further beam guiding tube 431A and an inner housing of the beam deflection device 410 are electrically connected to the upper beam guiding tube 431 and are at the same potential as the upper beam guiding tube 431.

High-voltage units in the 2 until 5 Particle beam devices 100, 200 and 400 shown are at high voltage, which is provided by at least one high-voltage supply unit. For example, the electron source 101 is connected to a high-voltage power supply unit 500 . Further, the extraction electrode 102 is connected to a high-voltage power supply unit 500', and the anode 103 of the SEM 100 is connected to a high-voltage power supply unit 500" (cf. 2 ). In the combination device 200, for example, the ion beam generator 301 and the extraction electrode 302 in the ion beam device 300 are connected to a high-voltage supply unit 500. In addition, further lenses of the ion beam device 300, for example the condenser lens 303 and/or the second objective lens 304, can be designed as electrostatic lenses which are also connected to a high-voltage supply unit and are supplied by this high-voltage supply unit. For example, this high-voltage supply unit is the high-voltage supply unit 500. The invention is not limited to the aforementioned high-voltage assemblies. Rather, each additional high-voltage assembly of the aforementioned particle beam devices can be electrically connected to the high-voltage supply unit 500 or to an additional high-voltage supply unit.

At the in the 4 and 5 In the illustrated exemplary embodiment of the particle beam device 400 according to the invention, at least one of the following high-voltage components of the particle beam device 400 can be at high voltage, controlled and supplied by a high-voltage supply unit: the electron source 402, the extraction electrode 403, the anode 404, the first electrostatic lens 405, the second electrostatic lens 406, the third electrostatic lens 407, the first mirror electrode 413A, the second mirror electrode 413B, the third mirror electrode 413C, the fourth electrostatic lens 415, the lower beam guiding tube 420 and the filter electrode 430. For example, the electron source 402 is electrically connected to a first high-voltage supply unit 500A . Further, for example, the extraction electrode 403 is electrically connected to a second high-voltage power supply unit 500B. In addition, the anode 404 is electrically connected to a third high-voltage power supply unit 500C. The upper beam guiding tube 431 can be electrically connected to a fourth high-voltage supply unit 500D, for example. However, it is also possible for the anode 404 to be electrically connected to the upper beam guidance tube 431, as has already been described above. In this case, the potential of the upper beam guiding tube 431 is supplied via the anode 404 with the third high-voltage power supply unit 500C. The fourth high-voltage power supply unit 500D is then not required. The first electrostatic lens 405 is electrically connected to a fifth high-voltage power supply unit 500E. Furthermore, the second electrostatic lens 406 is electrically connected to a sixth high-voltage power supply unit 500F. In addition, the third electrostatic lens 407 is electrically connected to a seventh high-voltage power supply unit 500G. The lower beam guiding tube 420 is electrically connected to an eighth high voltage power supply unit 500H. Furthermore, the third mirror electrode 413C is electrically connected to a ninth high-voltage power supply unit 500I. In addition, the second mirror electrode 413B is electrically connected to a tenth high-voltage power supply unit 500J. Furthermore, the first mirror electrode 413A is electrically connected to an eleventh high-voltage power supply unit 500K. The fourth electrostatic lens 415 is electrically connected to a twelfth high-voltage power supply unit 500L. A further specific embodiment provides for the filter electrode 430 to be electrically connected to a thirteenth high-voltage supply unit 500M.

The first through thirteenth high-voltage power supply units 500A through 500M may be configured identically. For example, they are designed like the high-voltage supply unit 500, which is explained in more detail below. First on the 6 received.

6 shows a circuit arrangement in a schematic block diagram by which the high-voltage supply unit 500 is provided. The high-voltage supply unit 500 has a first current source 501 for providing a first current I ₁ . The first current source 501 can be embodied as a constant current source, for example, so that the first current I ₁ made available by the first current source 501 is constant. Alternatively, provision is made for the first current source 501 to be in the form of an adjustable current source, so that the first current I ₁ can be adjusted. At the in 6 illustrated embodiment of the high-voltage supply unit 500, the first current source 501 is preferably a constant current source. At the first power source 501 is a first line 503 a first voltage source 502 connected. The first voltage source 502 provides an operating voltage for the first current source 501 .

The high-voltage supply unit 500 also has a second current source 504 for providing a second current I ₂ . The second current source 504 is in the form of an adjustable current source, for example, so that the second current I ₂ made available by the second current source 504 can be adjusted. Alternatively, provision is made for the second current source 504 to be in the form of a constant current source, so that the second current I ₂ is constant. At the in 6 illustrated embodiment of the high-voltage supply unit 500, the second current source 504 is designed as an adjustable current source. The second current source 504 is connected to the first current source 501 via a second line 506 . The first current source 501 is connected to the second current source 504 in series. A second voltage source 505 is connected to the second current source 504 via a third line 507 in order to supply the second current source 504 with an operating voltage.

In a further embodiment of the invention, provision is made for both the first current source 501 and the second current source 504 to be in the form of adjustable current sources.

The high-voltage supply unit 500 also has a setting and/or control circuit 508 for setting an output voltage U _a . The output voltage U _a is provided at a high-voltage connection 509 and tapped off. The output voltage U _a is a high voltage which is made available to at least one of the above-mentioned high-voltage units by one of the aforementioned particle beam devices 100, 200 or 400. In other words, the output voltage U _a is applied to at least one of the aforementioned high-voltage units of one of the aforementioned particle beam devices 100, 200 or 400.

The high-voltage supply unit 500 has an optical and/or electronic coupling device 510 which connects the adjustment and/or control circuit 508 to the adjustable second current source 504 . If the first current source 501 is embodied as an adjustable current source, the optical and/or electronic coupling device 510 can additionally or alternatively connect the adjustment and/or control circuit 508 to the first current source 501. In the 6 the optical and/or electronic coupling device 510 is shown schematically with dashed lines. For example, the optical and/or electronic coupling device 510 is designed as a light guide. In addition or as an alternative to this, it is provided that the optical and/or electronic coupling device 510 has a transmission unit on the adjustment and/or control circuit 508 and a reception unit on the adjustable second current source 504 . The transmitting unit is designed as an LED, for example, and the receiving unit is designed as a light receiver, for example. In addition or as an alternative to this, transmission by means of radio signals is provided between the receiving unit and the transmitting unit. For example, any electronic coupling or transmission that allows separation or isolation of the different high voltage potentials can be used.

The high-voltage power supply unit 500 has a feedback resistor 511 . The feedback resistor 511 is connected to the adjustment and/or control loop 508 by fourth lines 512 . In addition, the feedback resistor 511 is connected to the first current source 501 through a fifth line 513 and through parts of the second line 506 . The feedback resistor 511 is also connected to the second current source 504, specifically via the fifth line 513 and parts of the second line 506.

A third current I ₃ , which flows through the fifth line 513 , flows through the feedback resistor 511 . Furthermore, the feedback resistor 511, the first current source 501 and the second current source 504 are connected to the high-voltage terminal 509 by a seventh line 514, through which a fourth current I ₄ flows. In the case of an electrostatic application, the fourth current I4 can also have the magnitude zero.

In a further embodiment, not only the feedback resistor 511 is provided, but also at least one further feedback resistor (not shown), which is connected in parallel with the feedback resistor 511. The further feedback resistor can be designed, for example, like feedback resistor 511, which will be discussed in more detail below. The additional feedback resistor serves to reduce the noise.

The components of the high-voltage supply unit 500, ie the first power source 501, the first voltage source 502, the second power source 504, the second voltage source 505, the setting and/or control loop 508 and/or feedback resistor 511 may take any suitable form. An exemplary embodiment of how the structural units of the high-voltage supply unit 500 are designed is shown in FIG 7 shown. 7 is based on the 6 . Identical components are provided with the same reference symbols. The first current source 501 is formed by a cascade connection of bipolar transistors, in particular bipolar transistors with an insulated gate electrode (so-called IGBTs), or of metal-oxide-semiconductor field-effect transistors (so-called MOSFETs). The same applies to the second current source 504, which also has the receiving unit 510A of the optical and/or electronic coupling device 510.

The adjustment and/or control circuit 508 has a voltage setpoint setting unit 515 for setting a voltage U _f and a control unit 516 . In addition, the adjustment and/or control circuit 508 has the transmission unit 510B of the optical and/or electronic coupling device 510 .

The feedback resistor 511 is in the form of a resistor chain, for example. At the in the 7 In the embodiment shown, the feedback resistor 511 has n resistors labeled R ₁ to R _n . The n resistors are connected in series. For example, n is an integer in the range from 2 to 800, for example in the range from 200 to 600 or for example in the range from 300 to 500. In one embodiment, n is 400, for example. In particular, it is provided that the n resistors are of identical design and each have an identical resistance value. If the second current source 504 is adjustable, the first current source 501 of the high-voltage supply unit 500 is used to specify a maximum positive current, namely the first current I ₁ . The adjustable second current source 504 ensures the 4-quadrant operation of the high-voltage supply unit 500 . The output voltage U _a is set as follows. The voltage drop across the feedback resistor 511 is measured in order to determine the third current I ₃ therefrom. The second current I ₂ is then set and controlled by means of the setting and/or control circuit 508 in such a way that: $${\text{I}}_2={\text{I}}_1-{\text{I}}_3-{\text{I}}_4.$$

wobei U_a die Ausgangsspannung, U_f die oben erwähnte vorgegebene Spannung, R₁ bis R_m die Werte der ersten Widerstände sind, die in Reihe geschaltet sind und in 7 als einzelner Widerstand dargestellt sind, und R_m+1 bis R_n die Werte der weiteren Widerstände der Widerstandskette sind.Accordingly, the third current I ₃ is measured in order to set the second current I ₂ . The setting of the second current I ₂ also resets the third current I ₃ . Then the output voltage U _a is set in relation to a reference potential U _b according to a divider ratio of the resistor chain according to the following equation: $$u_a=u_{ƒ}\cdot \left(-\frac{\left(R_{m+1}+R_{m+2}+\cdots +R_n\right)}{{\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">R</figure-callout>}}_1+{\mathrm{<figure-callout\; id="2"\; label="R"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">R</figure-callout>}}_2+\cdots +R_n}\right)=-u_{ƒ}\cdot \left(\frac{n-m}{m}\right)$$

where U _a is the output voltage, U _f is the predetermined voltage mentioned above, R ₁ to R _m are the values of the first resistors connected in series and in 7 are shown as a single resistor, and R _m+1 to R _n are the values of the other resistors in the resistor chain.

If the first current source 501 is designed as an adjustable current source and if the second current source 504 is designed as a constant current source, then the second current source 504 specifies a maximum negative current I ₂ . The output voltage U _a is then set analogously to the above statements, with the adjustable first current source 501 taking over the function of the adjustable second current source 504 mentioned above.

In a further exemplary embodiment, provision is made for both the first current source 501 and the second current source 504 to be in the form of adjustable current sources. Then it is possible to set the maximum positive current and the maximum negative current arbitrarily.

The reference potential U _b of the adjustment and/or control circuit 508 can assume any desired potential. In particular, it is provided that the reference potential U _b of the adjustment and/or control circuit 508 is an output voltage of a further high-voltage supply unit, which can be configured identically or similarly to the high-voltage supply unit 500 . An embodiment of the invention therefore provides for a series connection of high-voltage supply units 500 to be formed. If the fourth current I ₄ (i.e. the load current) in the high-voltage units - as is usual for electrostatic units in particle beam devices - is negligible, the currents between the different high-voltage supply units 500 basically only result in the third currents I ₃ in the respective feedback resistors 511, which are subject to hardly any measurable fluctuations with a constant output voltage configuration.

If the first current source 501 is not designed as a constant current source but as an adjustable current source, the current I ₁ of the first current source 501 can also be adjusted by the adjustment and/or control circuit 508 (not shown), for example. This has already been explained above.

8th shows a further embodiment of the high-voltage supply unit 500. 8th is based on the 7 . Identical components are provided with the same reference symbols. In contrast to the embodiment according to FIG 7 shows the embodiment of the high-voltage power supply unit 500 of FIG 8th a feedback unit 517 which is provided with a capacitive voltage divider. The capacitive voltage divider here has a first capacitor C1 and a second capacitor C2. Furthermore, the feedback unit 517 has an amplifier and filter unit 518 . The feedback unit 517 is connected in parallel with the feedback resistor 511 . This makes it possible to measure a change in the output voltage U _a more quickly and thus to determine the third current I ₃ flowing through the feedback resistor 511 more quickly. It is then possible to use the setting and/or control circuit 508 to set and/or control the second current I ₂ of the adjustable second current source 504 more quickly. Furthermore, the feedback unit 517 makes it possible to reduce the residual ripple and the noise due to a higher sensitivity in determining the third current I ₃ . This has already been explained above. Reference is made to what was explained above.

the 9 , 10 and 10A 12 show an exemplary embodiment of the feedback resistor 511 in the form of a resistor circuit arrangement in a schematic representation. 9 12 shows the embodiment of the feedback resistor 511 in a plan view without a cooling unit. 10 shows the exemplary embodiment of the feedback resistor 511 in a side view with a cooling unit. This is discussed in more detail below.

The feedback resistor 511 of 9 has a total of 9 resistors R ₁ to R ₉ . However, the exemplary embodiment is not restricted to this number of resistors. Rather, the feedback resistor 511 can have any suitable number of resistors, for example a number in the range from 2 to 800, for example up to 400. The resistors R ₁ to Rg are arranged, for example, on a printed circuit board 519 and connected in series. Conductor tracks on the printed circuit board 519 are used for this purpose, which are not shown here for reasons of clarity. As an alternative to this, the resistors R ₁ to Rg can be freely wired. In the exemplary embodiment illustrated here using a printed circuit board 519, the resistors R ₁ to Rg are arranged at the same distance from one another and from the printed circuit board 519. Furthermore, the resistors R ₁ to R ₉ are of identical design, specifically with regard to their structural design as well as with regard to their resistance value. The resistors R ₁ to R ₉ preferably come from the same production batch. It can then also be assumed that the other technical specifications, for example the temperature coefficient and the voltage coefficient of the individual resistors, are identical or differ only slightly from one another. What was said above with regard to the scattering of the temperature coefficients also applies here.

The feedback resistor 511 is in 10 shown schematically in a side view. The resistors R ₁ to Rg are surrounded by a thermally conductive insulation 521 which completely occupies the space between the resistors R ₁ to R ₉ . In other words, the thermally conductive insulation 521 completely surrounds the resistors R ₁ to Rg. The thermally conductive insulation 521 is designed, for example, as a casting, in particular in the form of a compound made of epoxy or polyurethane or in the form of an insulating liquid. In addition or as an alternative to this, the thermally conductive insulation 521 can also be made of silicone. The thermally conductive insulation is electrically non-conductive and has a high thermal conductivity for an insulating material. In addition to the thermally conductive insulation 521 , the feedback resistor 511 has a cooling unit 520 . The cooling unit 520 has water flowing through it, for example, and is designed in such a way that it has an essentially constant temperature essentially over its entire surface. The cooling unit 520 can be part of a housing not shown here.

The cooling unit 520 rests on the thermally conductive insulation 521 and is arranged at an identical distance from the resistors R ₁ to R ₉ . This distance is, for example, in the range from 0.2 mm to 1 mm. However, the distance is not restricted to this range. Rather, any suitable distance can be used.

The thermally conductive insulation 521 is formed such that the cooling unit 520 is arranged on the thermally conductive insulation 521 . For example, the cooling unit 520 lies on top of the thermally conductive insulation 521 on. In a further exemplary embodiment, it is envisaged that the thermally conductive insulation 521 touches each of the resistors R ₁ to Rg.

Cooling unit 520 is thermally coupled to resistors R ₁ through R ₉ . There is a temperature flow between the resistors R ₁ to Rg and the cooling unit 520. In the case of FIG 9 and 10 In the illustrated embodiment of the feedback resistor 511, it is ensured that the resistors R ₁ to R ₉ have a substantially identical thermal resistance to the cooling unit 520. Due to the identical power loss for all resistors R ₁ to R ₉ , the same temperature difference between the resistors R ₁ to Rg and the cooling unit 520 accordingly occurs. As a result, the mean temperature coefficient of the resistors R ₁ to R ₉ together with temperature changes of the cooling unit 520 or changes in the power loss of the resistors R ₁ to R ₉ , which is also associated with a common temperature change of the resistors R ₁ to R ₉ , affect the Resistors R ₁ to Rg equalize so that the divider ratio R ₁ / (R ₁ + R ₂ + ... + R ₉ ) remains constant. It has been shown that in the embodiment described above, an identical temperature difference with regard to the cooling unit 520 is established for all resistors R ₁ to R ₉ . Taking this into account, the partial voltage U ₁ (cf. for example 10A) approximately independent of the temperature difference. This is explained in more detail below. For the partial voltage U ₁ applies in the described embodiment 9 , 10 and 10A $$u_{}$$$${}_1=u_a\cdot \frac{R_1}{\left({\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">R</figure-callout>}}_1+{\mathrm{<figure-callout\; id="2"\; label="R"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">R</figure-callout>}}_2+R_3+R_4+R_5+R_6+R_7+R_{\mathrm{8th}}+R_{\mathrm{8th}}+R_9\right)}$$

Since the resistors R ₁ to R ₉ are constructed identically in the exemplary embodiment described, it can be approximately assumed that the resistors R ₁ to Rg have an average temperature coefficient TK. Then applies to the partial voltage U ₁ $$u_1=u_a\cdot \frac{R\cdot \left(1+TK\cdot \Delta T\right)}{\left({\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">R</figure-callout>}}_1+{\mathrm{<figure-callout\; id="2"\; label="R"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">R</figure-callout>}}_2+R_3+R_4+R_5+R_6+R_7+R_{\mathrm{8th}}+R_{\mathrm{8th}}+R_9\right)\cdot \left(1+TK\cdot \Delta T\right)}$$

It can be seen that the partial voltage U ₁ is approximately independent of the temperature difference ΔT with regard to the cooling unit 520 and the power loss in the resistors R ₁ to R ₉ .

wobei Rov der Widerstand bei einer Spannung von U= 0V ist, und dass bei identischen Widerständen für das Teilverhältnis gilt $$\frac{U_1}{U_a}=\frac{R}{n\cdot R}=\frac{1}{9}$$

dann ist die Teilspannung U₁ des Rückführwiderstands 511 unabhängig von den Spannungskoeffizienten der Widerstände R₁ bis Rg, denn es gilt: $$U_1=U_a\cdot \frac{R_{OV}\cdot \left(1+VK\cdot U\right)}{\left(n\cdot R_{OV}\right)\cdot \left(1+VK\cdot U\right)}=\frac{1}{9}$$

In a further embodiment of the feedback resistor 511 it is provided that the voltage coefficients VK of the resistors R ₁ to R ₉ are essentially identical. As stated above, all resistors R ₁ to R ₉ have the same resistance value R. Because of the series connection of the resistors R ₁ to Rg, the same voltage U drops across each of the resistors R ₁ to R ₉ . Taking into account that for the resistance as a function of the applied voltage applies $$R\left(u\right)=R_{OV}+VK\cdot R_{OV}\cdot u$$

where Rov is the resistance at a voltage of U= 0V, and that for identical resistances applies to the division ratio $$\frac{u_1}{u_a}=\frac{R}{n\cdot R}=\frac{1}{9}$$

then the partial voltage U ₁ of the feedback resistor 511 is independent of the voltage coefficients of the resistors R ₁ to Rg because the following applies: $${\mathrm{<figure-callout\; id="1"\; label="u"\; filenames="DE102015207484B4\_0015.png,DE102015207484B4\_0016.png"\; state="\{\{state\}\}">u</figure-callout>}}_1=u_a\cdot \frac{R_{OV}\cdot \left(1+VK\cdot u\right)}{\left(n\cdot R_{OV}\right)\cdot \left(1+VK\cdot u\right)}=\frac{1}{9}$$

Thus, the feedback resistor 511 is basically a voltage divider that behaves linearly up to the maximum voltage of a partial resistor multiplied by the number n of resistors.

11 shows a circuit arrangement for generating a high voltage for a particle beam device, for example one of the aforementioned particle beam devices 100, 200 or 400. The circuit arrangement according to the invention has the high-voltage supply unit 500, which has already been explained above. The output voltage U _a , which is made available by the high-voltage supply unit 500 , is present at the high-voltage connection 509 . The circuit arrangement also has a Noise suppression unit 522, which is connected to the high-voltage power supply unit 500 via a connecting line 523. The output voltage U _a is fed to the noise suppression unit 522 by means of the connecting line 523 . This is discussed in more detail below. Furthermore, the feedback of the high-voltage supply unit 500, namely the feedback resistor 511 or alternatively the feedback unit 517, is connected to a voltage connection 531 via the fifth line 513.

The noise suppression unit 522 comprises a noise measuring device which has a first capacitor 524, for example a high-voltage capacitor, and a second capacitor 525, for example a high-voltage capacitor. The first capacitor 524 can also have no capacitance, so that the divider ratio would then be 1. This is realized, for example, by the first capacitor 524 having a negligibly small capacitance, for example, or by the first capacitor 524 being removed from the circuit, for example. At the location of the first capacitor 524, the line is broken so that two ends of the line are close to each other. Furthermore, the noise suppression unit 522 has an amplifier/filter unit 526 which is connected to the noise measuring device via a line 527 . In addition, the noise suppression unit 522 is provided with a noise control circuit 528, with the noise control circuit 528 being connected to the amplifier/filter unit 526 by a line 529 and the noise control circuit 528 being connected by a line 530 to the noise measurement device in the form of the first capacitor 524 and the second capacitor 525 is connected. In addition, the noise suppression unit 522 includes the voltage terminal 531 to which the high voltage is applied. The voltage terminal 531 is connected to the noise control circuit 528 by a wire. The positive supply voltage is identified as U _pos and the negative supply voltage for the noise suppression unit 522 is identified as U _neg .

The circuit arrangement according to 11 improves the noise of the high-voltage supply unit 500 in that the noise control circuit 528 is connected downstream, at the output of which, the voltage connection 531, the low-noise high voltage is provided. The noise is suppressed by measuring the AC component of the high voltage at the voltage connection 531 with the noise measuring device in the form of the first capacitor 524 with a resistor 532 connected in parallel and the second capacitor 525 and suppressing the noise with the noise control circuit 528. The AC voltage component of the high voltage measured with the noise measuring device is as an input signal to the amplifier-filter unit 526. The amplifier-filter unit 526 receives the high voltage of the high-voltage supply unit 500 as a further input signal. The output signal of the noise control circuit 528 is then provided at the voltage connection 531 as a low-noise high voltage. The noise suppression acts directly on the high voltage of the high voltage power supply unit 500 and is added to the high voltage, for example. The cut-off frequencies of the amplifier-filter unit 526 should be different from the cut-off frequencies of the high-voltage power supply unit 500. For example, the cut-off frequencies of the amplifier-filter unit 526 and the cut-off frequencies of the high-voltage supply unit 500 differ by a factor of 10. This avoids natural oscillations in the circuit arrangement.

Resistor 532 has two functions. On the one hand, together with the parallel capacitance of the capacitor 524, 525, it forms a high-pass filter with a defined limit frequency. On the other hand, it dominates the leakage current in the second capacitor 525, which is designed, for example, as a high-voltage capacitor with a high voltage drop, in which both internal leakage currents and external leakage currents are not negligible. A DC voltage close to 0V is then established at the first capacitor 524 .

12 shows a further circuit arrangement for generating a high voltage for a particle beam device, for example one of the aforementioned particle beam devices 100, 200 or 400. The embodiment of FIG 12 is based on the embodiment of 11 . Identical components are therefore marked with the same reference symbols. In contrast to the embodiment of 11 it is in the embodiment of 12 provided that the positive supply voltage U _pos and the negative supply voltage U _neg is provided by the high-voltage supply unit 500 . It is explicitly pointed out that the two supply voltages can also be made available in any other suitable way, for example by photocells or by inductive transmission.

13 shows a further circuit arrangement for generating a high voltage for a particle beam device, for example one of the aforementioned particle beam devices 100, 200 or 400. The Ausfüh example of the 13 is based on the one hand on the embodiment of 7 . Furthermore, the embodiment is based 13 on the 12 . Identical components are therefore marked with the same reference symbols. the 13 shows a more detailed representation of the tapping of the positive supply voltage U _pos and the negative supply voltage U _neg at the high-voltage supply unit 500. Both the positive supply voltage U _pos and the negative supply voltage U _neg are tapped at the second line 506. A first zener diode 533 and a second zener diode 534 are connected in series between a first tap 535 for the positive supply voltage U _pos and a second tap 536 for the negative supply voltage U _neg .

The features of the invention disclosed in the present description, in the drawings and in the claims can be essential both individually and in any combination for the realization of the invention in its various embodiments. The invention is not limited to the embodiments described. It can be varied within the scope of the claims and taking into account the knowledge of the person skilled in the art.

reference list

100

S.E.M

101

electron source

102

extraction electrode

103

anode

104

beam guide tube

105

first condenser lens

106

second condenser lens

107

first objective lens

108

first aperture unit

108A

first aperture

109

second aperture unit

110

pole shoes

111

Wash

112

single electrode

113

tubular electrode

114

object

115

grid device

116

first detector

117

second detector

118

second aperture

119

third detector

120

sample chamber

121

fourth detector

200

combination device

201

sample chamber

300

ion beam device

301

ion beam generator

302

Extraction electrode in the ion beam device

303

condenser lens

304

second objective lens

305

sample holder

306

adjustable aperture

307

first electrode arrangement

308

second electrode arrangement

400

Particle beam device with correction unit

401

particle beam column

402

electron source

403

extraction electrode

404

anode

405

first electrostatic lens

406

second electrostatic lens

407

third electrostatic lens

408

magnetic deflection units

409

first electrostatic beam deflection unit

409A

first multipole unit

409B

second multipole unit

410

beam deflection device

411A

first magnetic sector

411B

second magnetic sector

411C

third magnetic sector

411D

fourth magnetic sector

411E

fifth magnetic sector

411F

sixth magnetic sector

411G

seventh magnetic sector

413A

first mirror electrode

413B

second mirror electrode

413C

third mirror electrode

414

electrostatic mirror

415

fourth electrostatic lens

416

second electrostatic beam deflection unit

416A

third multipole unit

416B

fourth multipole unit

417

third electrostatic beam deflection unit

418

fifth electrostatic lens

418A

fifth multipole unit

418B

sixth multipole unit

419

first detector

420

lower jet guide tube

421

objective lens

422

magnetic lens

423

sixth electrostatic lens

424

rehearsal table

425

object

426

sample chamber

427

detection beam path

428

second detector

429

grid device

430

filter electrode

431

upper beam guide tube

431A

another beam guiding tube

432

another magnetic deflection element

433

another electrode

500

high voltage power supply unit

500'

high voltage power supply unit

500"

high voltage power supply unit

500A

first high-voltage power supply unit

500B

second high voltage power supply unit

500C

third high voltage power supply unit

500D

fourth high-voltage power supply unit

500E

fifth high-voltage power supply unit

500F

sixth high-voltage power supply unit

500g

seventh high-voltage power supply unit

500H

eighth high-voltage power supply unit

500I

ninth high-voltage power supply unit

500y

tenth high voltage power supply unit

500K

eleventh high-voltage power supply unit

500L

twelfth high-voltage power supply unit

500M

thirteenth high-voltage power supply unit

501

first power source

502

first voltage source

503

first line

504

second power source

505

second voltage source

506

second line

507

third line

508

Adjustment and/or control circuit

509

high voltage connection

510

optical and/or electronic coupling device

510A

receiving unit

510B

transmitter unit

511

feedback resistor

512

fourth lines

513

fifth line

514

seventh line

515

voltage setpoint specification unit

516

control unit

517

feedback unit

518

amplifier and filter unit

519

circuit board

520

cooling unit

521

thermally conductive insulation

522

noise reduction unit

523

connection line

524

first capacitor

525

second condenser

526

Amplifier filter unit

527

Management

528

noise control loop

529

Management

530

Management

531

voltage connection

532

Resistance

533

first zener diode

534

second zener diode

535

first tap

536

second tap

C1

first capacitor

C2

second condenser

R1-Rn

resistors

R1-R9

resistors

I1

first stream

I2

second stream

I3

third stream

I4

fourth stream

OA

optical axis

OA1

first optical axis

OA2

second optical axis

OA3

third optical axis

etc

output voltage

ugh

lead voltage

Ub

reference potential

U1

partial voltage

whoops

positive supply voltage

unequal

negative supply voltage

Claims (22)

High-voltage supply unit (500) for providing an output voltage (U _a ) for a particle beam device (100, 200, 400), having - at least one first current source (501) for providing a first current (I ₁ ), - at least one first voltage source (502) , which is connected to the first current source (501) via a first line (503), - at least one second current source (504) for providing a second current (I ₂ ), the second current source (504) being supplied via a second line (506 ) is connected to the first power source (501), - at least one second voltage source (505), which is connected to the second power source (504) via a third line (507), - at least one adjustment and/or control circuit (508) for setting and/or controlling the output voltage (U _a ), the setting and/or control circuit (508) having an optical and/or electronic coupling device (510) with the first power source (501) and/or the second power source (504) and with - at least one feedback resistor (511) through which a third current (13) flows, wherein - the feedback resistor (511) is connected to the adjustment and/or control circuit (508) by a fourth line (512 ) is connected, - the feedback resistor (511) is connected to the first current source (501) by a fifth line (513, 506), - the feedback resistor (511) is connected to the second current source (504) by a sixth line (513, 506 ) is connected, and wherein - the feedback resistor (511), the first current source (501) and the second current source (504) are connected to a high-voltage terminal (509) by a seventh line (514) through which a fourth current (14) flows. High voltage power supply unit (500) according to claim 1 , wherein one of the following features is formed on the high-voltage supply unit (500): - the first current source (501) is constructed as an adjustable current source and the second current source (504) is constructed as a constant current source; - The first current source (501) is designed as a constant current source and the second current source (504) is designed as an adjustable current source; or - both the first current source (501) and the second current source (504) are each designed as an adjustable current source. High voltage power supply unit (500) according to claim 1 or 2 , wherein the feedback resistor (511) is designed as a resistor chain. High voltage power supply unit (500) according to claim 3 , wherein - the feedback resistor (511) comprises n resistors (R ₁ to R _n ), where n is an integer and the n resistors (R ₁ to R _n ) are connected in series, - the feedback resistor (511) comprises a support ( 519), on which the n resistors (R ₁ to R _n ) are arranged, and wherein - the feedback resistor (511) has a cooling unit (520), the cooling unit (520) for a temperature flow between the n resistors (R ₁ to R _n ) and the cooling unit (520) is thermally coupled to the n resistors (R ₁ to R _n ) and wherein the cooling unit (520) has an almost identical thermal resistance to each of the n resistors. High voltage power supply unit (500) according to claim 4 , At least one thermally conductive insulation (521) being arranged between the holder (519) and the cooling unit (520), the thermally conductive insulation (521) being electrically non-conductive. High voltage power supply unit (500) according to claim 5 , wherein the cooling unit (520) is arranged on the thermally conductive insulation (521) that the cooling unit (520) touches the thermally conductive insulation (521). High-voltage power supply unit (500) according to any one of Claims 5 or 6 , wherein the thermally conductive insulation (521) touches each of the n resistors (R ₁ to R _n ). High-voltage power supply unit (500) according to any one of Claims 4 until 7 , wherein each of the n resistors (R ₁ to R _n ) is identical. High voltage power supply unit (500) according to one of the preceding claims, wherein the high voltage power supply unit (500) has at least one of the following features: (i) the first current source (501) and the second current source (504) are connected in series; or (ii) the output voltage (U _a ) is bipolar. High-voltage supply unit (500) according to one of the preceding claims, wherein the high-voltage supply unit (500) has one of the following features: - The high-voltage supply unit (500) has at least one feedback unit (517) with at least one capacitive voltage divider (C1, C2), the feedback unit (517) being connected to the feedback resistor (511); - The high-voltage supply unit (500) has at least one feedback unit (517) with at least one capacitive voltage divider (C1, C2), the feedback unit (517) being connected in parallel with the feedback resistor (511); or - the high-voltage supply unit (500) has at least one feedback unit (517) with at least one capacitive voltage divider (C1, C2), the capacitive voltage divider having a first capacitor (C1) and a second capacitor (C2), the second capacitor (C2 ) has zero capacitance. High-voltage supply unit (500) according to one of the preceding claims, wherein the high-voltage supply unit (500) has one of the following features: - The first voltage source (502) and the second voltage source (505) are designed as different voltage sources; or - The first voltage source (502) and the second voltage source (505) are designed as a single voltage source. Circuit arrangement for generating a high voltage for a particle beam device (100, 200, 400), having - at least one high-voltage supply unit (500) for providing an output voltage (U _a ), and having - at least one noise suppression unit (522) which is connected via at least one connecting line (523 ) is connected to the high-voltage supply unit (500) for conducting the output voltage (U _a ) of the high-voltage supply unit (500) into the noise suppression unit (522), the noise suppression unit (522) comprising: - at least one noise measuring device (524, 532, 525) for detecting a noise of the output voltage (U _a ), - at least one amplifier-filter unit (526), the amplifier-filter unit (526) being connected to the noise measuring device (524, 532, 525) by an eighth line, - at least a control circuit (528), the control circuit (528) being connected to the amplifier-filter unit (526) by a ninth line and wherein the control circuit (528) is connected to the noise measuring device (524, 532, 525) by a tenth line, and having - at least one high-voltage connection (531) to which the high voltage is applied, the high-voltage connection (531) being connected to the control circuit (528 ) is connected by an eleventh line. Circuit arrangement according to claim 12 , wherein the noise measuring device (524, 532, 525) comprises a voltage divider. Circuit arrangement according to Claim 13 , wherein the circuit arrangement has one of the following features: - the voltage divider is designed as a capacitive voltage divider (524, 525); or - the voltage divider is designed as a capacitive voltage divider (524, 525) with a first capacitor (524) and a second capacitor (525), the first capacitor (524) having zero capacitance. Resistor circuit arrangement (511) for a high-voltage supply unit (500) of a particle beam device (100, 200, 400), with - n resistors (R ₁ to R''), where n is an integer and the n resistors (R ₁ to R _n ) are connected in series, - a holder (519), on which the n resistors (R ₁ to R _n ) are arranged, and with - a cooling unit (520), wherein the cooling unit (520) for a temperature flow between the n Resistors (R ₁ to R _n ) and the cooling unit (520) with the n resistors (R ₁ to R _n ) is thermally coupled and wherein the cooling unit (520) to each of the n resistors (R ₁ to R _n ) a nearly identical has thermal resistance. Resistor Circuitry (511). claim 15 , The holder (519) being designed as a printed circuit board (519) or in the form of free wiring. Resistor Circuitry (511). claim 15 or 16 , wherein at least one thermally conductive insulation (521) is arranged between the holder (519) and the cooling unit (520). Resistor Circuitry (511). Claim 17 , wherein the cooling unit (520) is arranged on the thermally conductive insulation (521) that the cooling unit (520) touches the thermally conductive insulation (521). Resistance circuit arrangement (511) according to one of claims 17 or 18 , wherein the thermally conductive insulation (521) touches each of the n resistors (R ₁ to R _n ). Resistance circuit arrangement (511) according to one of Claims 15 until 19 , wherein each of the n resistors (R ₁ to R _n ) is identical. Particle beam device (100, 200, 400) for analyzing and/or processing an object (114, 425), with - at least one beam generator (101, 301, 402) for generating a particle beam with charged particles, - at least one objective lens (107, 304 , 421) for focusing the particle beam onto the object (114, 425), - at least one detector (116, 117, 119, 121, 419, 428) for detecting interaction particles and/or interaction radiation, the interaction particles and/or the interaction radiation arise due to an interaction of the particle beam with the object (114, 425), and with - at least one high-voltage assembly (101, 102, 103, 301, 302, 402, 403, 404, 405, 406, 407, 413A, 413B, 413C, 415, 420, 430) to which a high voltage is applied, the particle beam device (100, 200, 400) further having one of the following features: (a) at least one high-voltage supply unit (500) according to one of the Claims 1 until 11 ; (b) at least one circuit arrangement according to one of Claims 12 until 14 ; and (c) at least one resistive circuit arrangement (511) according to any one of Claims 15 until 20 . particle beam device (100, 200, 400). Claim 21 , wherein the particle beam device is designed as an electron beam device and/or ion beam device.

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