DE102014218426A1 - Assembly with at least two supporting bodies and a solder joint - Google Patents

Assembly with at least two supporting bodies and a solder joint Download PDF

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Publication number
DE102014218426A1
DE102014218426A1 DE102014218426.6A DE102014218426A DE102014218426A1 DE 102014218426 A1 DE102014218426 A1 DE 102014218426A1 DE 102014218426 A DE102014218426 A DE 102014218426A DE 102014218426 A1 DE102014218426 A1 DE 102014218426A1
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Prior art keywords
solder
layer
melting point
carrier
layers
Prior art date
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Application number
DE102014218426.6A
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German (de)
Inventor
Herbert Schwarzbauer
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Siemens AG
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Siemens AG
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Publication date
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Priority to DE102014218426.6A priority Critical patent/DE102014218426A1/en
Publication of DE102014218426A1 publication Critical patent/DE102014218426A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8334—Bonding interfaces of the layer connector
    • H01L2224/83345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/83424—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/83825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0405—Solder foil, tape or wire
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder

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Abstract

Die Erfindung betrifft eine Baugruppe mit einem Halbleiterchip, einem Schaltungsträger, eine Tragkörper und einen den Tragkörper und den Schaltungsträger verbindenden Lotverbund. Die Erfindung zeichnet sich dadurch aus, dass der Lotverbund fünf Materialschichten aufweist, eine duktile Trägerschicht mit jeweils einer Lotschicht auf jeder Seite und jeweils einer zwischen den Lotschichten und der Trägerschicht angeordneten Diffusionssperrschicht, wobei die Lotschichten ein Material umfasst, das einen niedrigeren Schmelzpunkt aufweist als die Trägerschicht.The invention relates to an assembly comprising a semiconductor chip, a circuit carrier, a support body and a solder joint connecting the support body and the circuit carrier. The invention is characterized in that the solder composite has five material layers, a ductile carrier layer, each having a solder layer on each side and a respective disposed between the solder layers and the carrier layer diffusion barrier layer, wherein the solder layers comprises a material having a lower melting point than that support layer.

Description

Die Erfindung betrifft eine Baugruppe mit einem Halbleiterchip und einem Schaltungsträger nach dem Oberbegriff des Patentanspruches 1 sowie ein Verfahren zur Herstellung einer Baugruppe mit den Merkmalen des Patentanspruches 11. The invention relates to an assembly with a semiconductor chip and a circuit carrier according to the preamble of claim 1 and a method for producing an assembly with the features of claim 11.

Elektrische Bauelemente werden meist aus schaltungs- oder montagetechnischen Gründen auf Schaltungsträgern zu modularen Einheiten zusammengefasst. Die dadurch konzentrierte Verlustwärme erfordert das Anbinden dieser Module an Kühlvorrichtungen, um Überhitzungen zu vermeiden und eine genügende Lebensdauer sicherzustellen. Der Wärmeübergang vom Schaltungsträger zur Kühleinrichtung stellt jedoch immer die technische schwierige Engstelle dar, da zwischen dem Schaltungsträger und dem Material des Kühlkörpers in der Regel ein erheblicher Unterschied des thermischen Ausdehnungskoeffizienten besteht. Electrical components are usually summarized for circuit or assembly reasons on circuit boards to modular units. The resulting concentrated heat loss requires the connection of these modules to cooling devices in order to avoid overheating and ensure a sufficient service life. However, the heat transfer from the circuit carrier to the cooling device is always the technically difficult bottleneck, as between the circuit carrier and the material of the heat sink is usually a significant difference in the thermal expansion coefficient.

Üblicherweise werden die Module mit wärmeleitender Paste oder Folie als Zwischenschicht auf die Kühleinrichtung geschraubt. Die daraus resultierenden Lotverbindungen weisen ein relativ grobes Kristallisationsgefüge mit Poren und Ausscheidungen auf und sind daher in ihren mechanischen Eigenschaften nur begrenzt steuerbar. Es ist durchaus üblich, in einem konventionellen Lötprozess den oder die Schaltungsträger mit einer Bodenplatte zu verlöten und so die thermischen Eigenschaften durch Wärmespreizung und Pufferung zu verbessern. Usually, the modules are screwed with thermally conductive paste or film as an intermediate layer on the cooling device. The resulting solder joints have a relatively coarse crystallization structure with pores and precipitates and are therefore limited in their mechanical properties controllable. It is quite common to solder in a conventional soldering process or circuit board with a bottom plate and so to improve the thermal properties by heat spreading and buffering.

In der US 8,431,445 B2 wird beansprucht, alle Verbindungen an einem elektrischen Aufbau von der Halbleiterlötung bis zur Verbindung mit dem Flüssigkeitskühlkörper durch temperaturfestes Diffusionslöten herzustellen. Die dort beschriebene, auch als Transient Liquid Phase (TLP) Prozess bezeichnete Methode erzeugt eine harte, intermetallische Verbindungsschicht bei höheren Temperaturen, die jedoch aufgrund ihrer Anteile an intermetallischen Verbindungen eine hohe Sprödigkeit aufweist. Ein alternatives Verfahren wird in der DE 10 2010 021 765 A1 beschrieben, wobei dieses Verfahren einen hohen Anpressdruck erfordert und ebenfalls zu einer harten spröden Verbindung zwischen dem zu lötenden Bauteil führt. Bei harten Verbindungen und hoher Verbindungstemperatur besteht immer das Risiko, dass bei Temperaturwechseln Risse in der Verbindung oder Brüche in spröden Schaltungsträgern, wie Keramik, auftreten. Ferner sei als Stand der Technik auch noch „Low Temperature Fluxless Bonding Technique using In-Sn Composite“, S. Choe, W. W. So and C. C. Lee in 2000 Electronic Components and Technology Conference und besonders “A Fluxless Sn-In Bonding Process Achieving High Re-Melting Temperature“, R. W. Chuang, S. Choe and C. C. Lee in 2001 Electronic Components and Technology Conference genannt, wonach der Schmelzpunkt von eutektischen Lotschichten durch Diffusion in einem Zentrum der Lotschicht erhöht werden kann, was ebenfalls wiederum zur Verhärtung des Schichtaufbaus führt. In the US 8,431,445 B2 is claimed to produce all the connections to an electrical structure from the Halbleiterlötung to the connection with the liquid heat sink by temperature-resistant diffusion soldering. The method described there, also referred to as transient liquid phase (TLP) process, produces a hard, intermetallic compound layer at higher temperatures, which, however, has a high brittleness due to their proportions of intermetallic compounds. An alternative method is used in the DE 10 2010 021 765 A1 described, this method requires a high contact pressure and also leads to a hard brittle connection between the component to be soldered. With hard connections and high connection temperature, there is always the risk that cracks in the connection or breaks in brittle circuit carriers, such as ceramics, occur during temperature changes. Furthermore, as state of the art also still "Low Temperature Fluxless Bonding Technique Using In-Sn Composite", S. Choe, WW So and CC Lee in the 2000 Electronic Components and Technology Conference and especially "A Fluxless Sn-In Bonding Process Achieving High Re-Melting Temperature", RW Chuang, S. Choe and CC Lee in the 2001 Electronic Components and Technology Conference called, after which the melting point of eutectic solder layers can be increased by diffusion in a center of the solder layer, which in turn leads to hardening of the layer structure.

Die Aufgabe der Erfindung besteht darin, eine Baugruppe mit einem Lotverbund darzustellen, wobei der Lotverbund gegenüber dem Stand der Technik eine höhere Duktilität aufweist. The object of the invention is to present an assembly with a solder composite, wherein the solder composite has a higher ductility compared to the prior art.

Die Lösung der Aufgabe besteht in einer Baugruppe mit den Merkmalen des Patentanspruches 1 sowie in einem Verfahren mit den Merkmalen des Patentanspruches 11. The solution of the problem consists in an assembly with the features of claim 1 and in a method with the features of claim 11.

Die erfindungsgemäße Baugruppe umfasst zwei Tragkörper (beispielsweise bei einer Anwendung in der Elektronik einen Halbleiterchip und einen Schaltungsträger oder einen Schaltungsträger und einen Kühlkörper bzw. eine Bodenplatte) sowie einen, die Tragkörper verbindenden Lotverbund. Die Erfindung zeichnet sich dadurch aus, dass der Lotverbund fünf Materialschichten aufweist. Hierbei handelt es sich zunächst um eine duktile Trägerschicht, die im Zentrum des Lotverbundes angeordnet ist und die auf jeder Seite von einer Lotschicht umgeben ist. Ferner ist jeweils zwischen der Lotschicht und der Trägerschicht eine Diffusionssperrschicht angeordnet. Ferner zeichnet sich die Erfindung dadurch aus, dass die Lotschicht ein Material umfasst, das einen niedrigeren Schmelzpunkt aufweist als die Trägerschicht. The assembly according to the invention comprises two support bodies (for example, in an application in electronics, a semiconductor chip and a circuit carrier or a circuit carrier and a heat sink or a bottom plate) and a solder joint connecting the carrier body. The invention is characterized in that the solder composite has five material layers. This is initially a ductile carrier layer, which is arranged in the center of the solder composite and which is surrounded on each side by a layer of solder. Furthermore, in each case a diffusion barrier layer is arranged between the solder layer and the carrier layer. Furthermore, the invention is characterized in that the solder layer comprises a material which has a lower melting point than the carrier layer.

Durch die Anwendung des beschriebenen Lotverbundes als Lot ist es beispielsweise zwischen dem Schaltungsträger und dem Tragkörper möglich, eine Lotschicht zu wählen, die ursprünglich eine eutektische Zusammensetzung aufweist, die einen sehr niedrigen Schmelzpunkt aufweist, wobei während oder nach dem Lötprozess eine Diffusion von Atomen bzw. Legierungsbestandteilen der Lotschicht in die Diffusionssperrschicht erfolgt, dadurch eine Verarmung des Legierungsbestandteiles in der Lotschicht eintritt und sich dadurch der Schmelzpunkt erhöht, wobei jedoch im Gegenzug die aus der Lotschicht heraus diffundierenden Legierungsbestandteile in der Diffusionssperrschicht aufgefangen werden, und von der duktilen Trägerschicht ferngehalten werden. Im fertigen Lotverbund bleibt die duktile Trägerschicht weiterhin duktil und kann einem großen Unterschied zwischen Wärmeausdehnungskoeffizienten bzw. Temperaturwechselvorgängen standhalten. Die Erfindung besteht somit im wesentlichen aus der Kombination einer duktilen Schicht, einer Diffusionssperrschicht und einer Lotschicht, wobei die Diffusionssperrschicht Atome aus der Lotschicht auffängt und die duktile Trägerschicht hiervon einerseits schützt und andererseits eine Zusammensetzungsänderung in der Lotschicht erlaubt, die zur Erhöhung des ehemals geringen Schmelzpunktes führt. By applying the described solder joint as a solder, it is possible, for example, between the circuit carrier and the support body to select a solder layer, which originally has a eutectic composition having a very low melting point, during or after the soldering process, a diffusion of atoms or Alloy constituents of the solder layer is in the diffusion barrier layer, thereby entering a depletion of the alloying constituent in the solder layer and thereby increases the melting point, but in turn the alloying components diffusing out of the solder layer are collected in the diffusion barrier layer, and kept away from the ductile support layer. In the finished solder composite, the ductile carrier layer remains ductile and can withstand a large difference between thermal expansion coefficients and thermal cycling. The invention thus consists essentially of the combination of a ductile layer, a diffusion barrier layer and a solder layer, wherein the diffusion barrier layer absorbs atoms from the solder layer and protects the ductile carrier layer on the one hand and on the other hand a Composition change allowed in the solder layer, which leads to the increase of the formerly low melting point.

Grundsätzlich kann die Erfindung auch außerhalb der Elektronik überall dort Anwendung finden, wo duktile Lotverbunde notwendig sind, beispielsweis bei Verbindung von Armierungssystemen, wie Panzerungsverbunde auf Basis verschiedener Werkstoffe. In principle, the invention can also be used outside the electronics wherever ductile solder composites are necessary, for example when joining reinforcement systems, such as armor composites based on various materials.

In einem fertig gelöteten Zustand weist die Lotschicht bevorzugt ein übereutektisches bzw. untereutektisches Material auf, das, wie bereits beschrieben, durch Diffusion von Legierungselementen aus der Lotvorschicht in die Diffusionssperrschicht entstanden ist. In a finished soldered state, the solder layer preferably has a hypereutectic or hypoeutectic material, which, as already described, is produced by diffusion of alloying elements from the solder pre-layer into the diffusion barrier layer.

In einer Ausgestaltungsform der Erfindung ist die Diffusionssperrschicht im Wesentlichen aus einem reinen Metall ausgestaltet, hierbei hat sich insbesondere Silber oder Kupfer besonders bewährt. In one embodiment of the invention, the diffusion barrier layer is substantially made of a pure metal, in particular silver or copper has proven particularly useful here.

Ferner ist es zweckmäßig, dass die Trägerschicht topographische Vertiefungen, beispielsweise in Form von Rillen aufweist, in die Lotreste einfließen können bzw. Gase, die während des Lötprozesses entstehen, aufgenommen werden können, um Lunker in der Lotschicht zu vermeiden. Furthermore, it is expedient that the carrier layer has topographic depressions, for example in the form of grooves, can flow into the Lotreste or gases that arise during the soldering process, can be added to avoid voids in the solder layer.

Im Weiteren ist es zweckmäßig, dass die Lotschichten, die sich auf beiden Seiten der Trägerschicht befinden, unterschiedliche Zusammensetzungen und somit auch unterschiedliche Schmelzpunkte aufweisen. Auf diese Weise ist es möglich, zunächst die eine Verbindung, beispielsweise zwischen Schaltungsträger und Lotverbund herzustellen, was beispielsweise durch ein Warmwalzverfahren erfolgen kann, und anschließend, wenn sich auch durch Diffusion von legierungsbestandteilen der Schmelzpunkt dieser Lotschicht erhöht hat, einen zweiten Lotvorgang durchzuführen, der dann die Verbindung zwischen dem Lotverbund und dem Tragkörper einstellt. Furthermore, it is expedient that the solder layers, which are located on both sides of the carrier layer, have different compositions and thus also different melting points. In this way, it is possible to first produce the one connection, for example between circuit carrier and solder composite, which can be done for example by a hot rolling process, and then, if also increased by diffusion of alloying constituents of the melting point of this solder layer to perform a second soldering process, the then adjusts the connection between the solder composite and the support body.

In einer weiteren Ausgestaltungsform der Erfindung ist es zweckmäßig, dass das in allgemeiner Form als Tragkörper bezeichnete Bauteil in Form einer metallischen Bodenplatte und/oder in Form eines Kühlkörpers ausgestaltet ist. Dabei kann der Schaltungsträger mit dem Halbleiterchip entweder direkt auf einen Kühlkörper montiert werden, wobei der schwebende Lotverbund zum Einsatz kommt. Bei zu erwartenden, sehr hohen Unterschieden im thermischen Ausdehnungskoeffizient oder bei einer sehr hohen Temperaturwechselbeanspruchung kann zwischen dem Schaltungsträger und dem Kühlkörper noch eine weitere metallische Bodenplatte eingesetzt werden bzw. dazwischen gelötet werden, die einen Ausdehnungskoeffizienten aufweist, der zwischen dem des Schaltungsträgers und dem des Kühlkörpers liegt. Hierbei ist es zweckmäßig, wenn jeweils zwischen dem Schaltungsträger und der metallischen Bodenplatte und zwischen der metallischen Bodenplatte und dem Kühlkörper ein entsprechender Lotverbund angeordnet ist. In a further embodiment of the invention, it is expedient that the component designated in general form as a carrier body is designed in the form of a metallic base plate and / or in the form of a heat sink. In this case, the circuit carrier can be mounted with the semiconductor chip either directly on a heat sink, the floating solder composite is used. If expected, very high differences in the thermal expansion coefficient or at a very high thermal cycling can be used between the circuit board and the heat sink yet another metallic bottom plate or soldered therebetween, which has a coefficient of expansion between that of the circuit substrate and the heat sink lies. Here, it is expedient if in each case a corresponding solder joint is arranged between the circuit carrier and the metallic bottom plate and between the metallic bottom plate and the heat sink.

In einer weiteren Ausgestaltungsform der Erfindung ist es zweckmäßig, dass die duktile Trägerschicht auf Basis von Zinn besteht, da Zinn eine hohe Duktilität aufweist. Um eine sogenannte Zinnpest zu vermeiden, ist es zweckmäßig, dem Zinn Antimon oder Bismut bis zu einem Legierungsgehalt von 1 Gew.% zuzufügen. In a further embodiment of the invention, it is expedient that the ductile carrier layer is based on tin, since tin has a high ductility. In order to avoid a so-called Zinnpest, it is expedient to add antimony or bismuth to the tin up to an alloy content of 1% by weight.

Die Lotschicht basiert insbesondere auf einer Legierung zwischen Indium und Zinn bzw. Zinn und Wismut oder einer dreiphasigen Legierung aus Indium, Zinn und Wismut. Derartige Legierungen weisen den für die Anwendung besonders vorteilhaften Schmelztemperaturbereich auf. The solder layer is based in particular on an alloy between indium and tin or tin and bismuth or a three-phase alloy of indium, tin and bismuth. Such alloys have the melting temperature range which is particularly advantageous for the application.

Ein weiterer Bestandteil der Erfindung ist ein Verfahren zur Herstellung einer Baugruppe, wobei eine duktile Trägerschicht beidseitig jeweils zunächst mit einer Diffusionssperrschicht und anschließend mit einer weniger als 20 µm dicken Lotvorschicht aus einer im wesentlichen eutektischen Legierung versehen wird, wobei der Schmelzpunkt der eutektischen Legierung niedriger ist als der Schmelzpunkt des Trägermaterials. Anschließend wird dieser so erzeugte Lotverbund zwischen einer Bodenplatte und einem Schaltungsträger positioniert und diese Anordnung wird einer Temperaturbehandlung unterzogen. Dabei liegt die angewendete Temperatur unter dem Schmelzpunkt der Trägerschicht und über dem Schmelzpunkt der Lotvorschicht. Anschließend erfolgt eine Schmelzpunkterhöhung der Lotvorschicht durch Diffusion von Legierungsbestandteilen in die Diffusionssperrschicht. Another component of the invention is a method for producing an assembly, wherein a ductile carrier layer is provided on both sides in each case first with a diffusion barrier layer and then with a less than 20 microns thick Lotvorschicht of a substantially eutectic alloy, wherein the melting point of the eutectic alloy is lower as the melting point of the support material. Subsequently, this solder joint thus produced is positioned between a bottom plate and a circuit carrier and this arrangement is subjected to a temperature treatment. The applied temperature is below the melting point of the carrier layer and above the melting point of the Lotvorschicht. Subsequently, a melting point increase of the solder pre-layer takes place by diffusion of alloying constituents into the diffusion barrier layer.

Unter duktil wird hierbei insbesondere eine Materialeigenschaft verstanden, wonach im Gegensatz zum spröden Bruch, bei dem duktilen Material vor einem Bruch eine plastische Verformung des Materials stattfindet. Bei makroskopischen Proben mit duktilem Verhalten tritt vor dem Bruch in der Regel ein sogenanntes Einschnüren der Probe auf, was auf eine plastische Verformung zurückzuführen ist. Ferner weisen duktile Materialien eine starke Bruchdehnung auf, die mehr als 10 %, bevorzugt mehr als 30 % betragen kann. Ductile is understood here to mean, in particular, a material property, according to which, in contrast to the brittle fracture, plastic deformation of the material takes place before breakage of the ductile material. For macroscopic samples with ductile behavior, a so-called constriction of the sample usually occurs before fracture, which is due to a plastic deformation. Furthermore, ductile materials have a high elongation at break, which may be more than 10%, preferably more than 30%.

Anhand der folgenden Figuren sollen das Verfahren und das Bauteil näher erläutert werden. Hierbei handelt es sich um exemplarische Ausgestaltungsformen der Erfindung, die keine Einschränkung des Schutzbereiches darstellen. Dabei zeigen: The method and the component will be explained in more detail with reference to the following figures. These are exemplary embodiments of the invention, which represent no limitation of the scope. Showing:

1 eine Baugruppe mit Halbleiterchip, Schaltungsträger und Tragkörper, die durch einen Lotverbund verbunden sind, 1 an assembly with semiconductor chip, circuit carrier and support body, which are connected by a solder bond,

2 einen Lotverbund, 2 a solder joint,

3 eine Darstellung eines Verfahrens zur Herstellung einer Baugruppe gemäß 1. 3 an illustration of a method for producing an assembly according to 1 ,

In 1 ist schematisch eine Darstellung einer Baugruppe gegeben, die einen Halbleiterchip 1 umfasst, der auf einen Schaltungsträger 2, der auch als Substrat bezeichnet werden kann, durch eine Lötverbindung montiert ist. Ferner umfasst die Baugruppe 10 einen Tragkörper 3, der hier in Form einer metallischen Bodenplatte 31 ausgestaltet ist sowie einen weiteren Tragkörper 3 in Form eines Kühlkörpers 32. Jeweils zwischen dem Schaltungsträger 2, der metallischen Bodenplatte 31 und dem Kühlkörper 32 ist ein Lotverbund 5 angeordnet. Grundsätzlich kann es auch zweckmäßig sein, den Halbleiterchip 1 mit dem Schaltungsträger 2 durch einen entsprechenden Lotverbund zu verbinden. In 1 is a schematic representation of an assembly is given, which is a semiconductor chip 1 includes, on a circuit carrier 2 , which may also be referred to as a substrate, is mounted by a solder joint. Furthermore, the assembly includes 10 a support body 3 , which is in the form of a metallic base plate 31 is configured and another support body 3 in the form of a heat sink 32 , In each case between the circuit carrier 2 , the metallic floor plate 31 and the heat sink 32 is a solder joint 5 arranged. In principle, it may also be expedient to use the semiconductor chip 1 with the circuit carrier 2 to be connected by a corresponding solder joint.

Grundsätzlich kann es auch zweckmäßig sein, den Schaltungsträger 2 direkt auf dem Kühlkörper unter Verwendung eines Lotverbundes 5 zu montieren, bei einem sehr großen Unterschied zwischen den Ausdehnungskoeffizienten des Schaltungsträgers 2 und des Kühlkörpers 32, der in der Regel aus Aluminium mit einem sehr hohen Wärmeausdehnungskoeffizienten besteht, ist es zweckmäßig, die metallische Bodenplatte 31 dazwischen anzuordnen. Die metallische Bodenplatte 31 kann beispielsweise aus Kupfer bestehen, das einen Ausdehnungskoeffizienten α aufweist, der zwischen dem Material des Schaltungsträgers 2, beispielsweise einer Keramik, und dem Aluminium des Kühlkörpers 32 liegt. In principle, it may also be expedient to use the circuit carrier 2 directly on the heat sink using a solder bond 5 to assemble, with a very large difference between the expansion coefficients of the circuit substrate 2 and the heat sink 32 , which is usually made of aluminum with a very high coefficient of thermal expansion, it is appropriate to the metallic bottom plate 31 to arrange between. The metallic floor plate 31 may for example consist of copper, which has an expansion coefficient α, between the material of the circuit substrate 2 , For example, a ceramic, and the aluminum of the heat sink 32 lies.

Anhand von 2 soll nun auf die Beschaffenheit des Lotverbundes 5 eingegangen werden. Der Lotverbund 5 umfasst zentral eine Trägerschicht 51, die beispielsweise in Form einer gewalzten Bleifolie ausgestaltet ist. Ferner umfasst der Lotverbund 5 auf jeder Seite der Trägerschicht 51 jeweils eine Lotschicht 52 sowie eine Diffusionssperrschicht 55. Dazwischen ist eine Ausscheidungsschicht 54 angeordnet, deren Funktion bzw. Wirkungsweise und Zustandekommen anhand eines für den Lotverbund zweckmäßiges Herstellungsverfahren erläutert wird. Based on 2 should now on the nature of the solder composite 5 To be received. The solder joint 5 centrally comprises a carrier layer 51 , which is designed for example in the form of a rolled lead foil. Furthermore, the solder composite comprises 5 on each side of the carrier layer 51 one solder layer each 52 and a diffusion barrier layer 55 , In between is a precipitate layer 54 arranged, whose function or mode of action and conclusion is explained by means of a suitable for the solder composite manufacturing process.

Zunächst wird die gewalzte Bleifolie, die mit etwa 1 Gew.% Antimon versetzt ist, eine Brinellhärte zwischen 13 und 16 aufweist und eine Bruchdehnung von über 20 % besitzt, beispielsweise galvanisch mit einer Diffusionssperrschicht 55 versehen. Die Diffusionssperrschicht 55 besteht bevorzugt aus einem reinen Metall, beispielsweise Silber oder Kupfer. Auch diese Beschichtung erfolgt auf beiden Seiten der Trägerfolie 51. Im Weiteren wird auf die Diffusionssperrschicht auch durch ein herkömmliches Beschichtungsverfahren eine Lotvorschicht 56 aufgebracht, die bevorzugt aus einem eutektischen Gemisch eines üblichen Lotwerkstoffes besteht. Dies kann beispielsweise eine Legierung von Indium und Zinn, Bismut und Zinn bzw. Indium, Bismut, Zinn oder unter bestimmten Umständen auch Blei-Zinn sein. Diese Legierung kann entweder als Ganzes gegebenenfalls auch galvanisch aufgetragen werden oder es werden Einzelschichten mit vorgegebener Dicke der einzelnen Legierungselemente sequentiell aufgebracht. So kann z.B. auf die Diffusionssperrschicht 55 zunächst eine Bleischicht von einer Dicke von 10 µm aufgebracht werden und eine darauffolgende Indiumschicht mit ebenfalls einer Dicke in derselben Größenordnung bereitgestellt werden. Das Aufbringen der Lotvorschicht 55 erfolgt ebenfalls wieder auf beiden Seiten der Trägerfolie 51. Dieser Lotverbund 5 wird nun zwischen die zu verbindenden Bauelemente, beispielsweise zwischen den Schaltungsträger und der metallischen Bodenplatte 3 positioniert und einer Wärmebehandlung unterzogen. Die Temperatur, die bei der Wärmebehandlung eingestellt wird, liegt knapp über dem Schmelzpunkt des zu erwartenden eutektischen Gemisches, beispielsweise dem Schmelzpunkt des Indium-Zinn-Eutektikums. First, the rolled lead foil, which is added with about 1 wt.% Antimony, a Brinell hardness between 13 and 16 has and has an elongation at break of about 20%, for example galvanically with a diffusion barrier layer 55 Mistake. The diffusion barrier layer 55 preferably consists of a pure metal, for example silver or copper. This coating also takes place on both sides of the carrier film 51 , Furthermore, a solder pre-coat is also applied to the diffusion barrier layer by a conventional coating process 56 applied, which preferably consists of a eutectic mixture of a conventional solder material. This may, for example, be an alloy of indium and tin, bismuth and tin or indium, bismuth, tin or, under certain circumstances, lead-tin. If appropriate, this alloy can also be galvanically applied as a whole or individual layers with a predetermined thickness of the individual alloying elements can be applied sequentially. For example, on the diffusion barrier layer 55 First, a lead layer of a thickness of 10 microns are applied and a subsequent indium layer are also provided with a thickness of the same order of magnitude. The application of the solder pre-coating 55 also takes place again on both sides of the carrier film 51 , This braided joint 5 is now between the components to be connected, for example, between the circuit carrier and the metallic bottom plate 3 positioned and subjected to a heat treatment. The temperature, which is set during the heat treatment, is just above the melting point of the expected eutectic mixture, for example, the melting point of the indium-tin eutectic.

Bereits vor Erreichen des Schmelzpunktes treten Diffusionsprozesse zwischen den Phasenbestandteilen in den beiden äußeren Schichten der Lotvorschicht 55 auf, wodurch es bei sequentiell aufgetragenen Schichten zur Bildung des Eutektikums zwischen Indium und Zinn kommt. Die Lotvorschicht 55 verflüssigt sich dabei, etwaige dabei entstehende Gase bzw. überschüssiges Lot können durch optionale Vertiefungen, beispielsweise in Form von Rillen 53 im Lotverbund bzw. in der Trägerfolie 51 aufgefangen werden. Nachdem die Temperatur wieder erniedrigt wird, erstarrt die Lotvorschicht 55 in einer eutektischen Zusammensetzung zwischen Indium und Zinn. Direkt nach dem Erstarren und während des Abkühlvorgangs kommt es bereits zu Diffusionen von Indium-Atomen in die Diffusionssperrschicht 55. Hierdurch verlässt die Lotvorschicht den eutektischen Bereich und wird zum übereutektischen Material, wodurch wiederum der Schmelzpunkt und die Temperaturbeständigkeit einer Lotschicht 51 erhöht wird. Die in die Diffusionssperrschicht 55 diffundierten Indium-Atome führen dort zu einer Ausscheidung in der Diffusionssperrschicht 55, weshalb diese Schicht nun auch als Ausscheidungsschicht 54 bezeichnet wird. Diese Ausscheidungsschicht 54 weist eine höhere Härte auf, was zweckmäßig ist, um die plastische Verformung bei Temperaturwechsel vom gelöteten Rand besser auf das duktile Zentrum, insbesondere auf die Trägerfolie 51 zu lenken. Im Zentrum des Lotverbundes 5 bleibt die sehr duktile Trägerschicht 51 in ihrer duktilen Ausgestaltung bestehen. Even before reaching the melting point, diffusion processes occur between the phase constituents in the two outer layers of the solder pre-coating 55 resulting in sequentially applied layers for forming the eutectic between indium and tin. The Lotvorschicht 55 liquefies, any resulting gases or excess solder can by optional depressions, for example in the form of grooves 53 in the solder composite or in the carrier film 51 be caught. After the temperature is lowered again, the Lotvorschicht solidifies 55 in a eutectic composition between indium and tin. Immediately after solidification and during the cooling process, diffusion of indium atoms into the diffusion barrier layer already occurs 55 , As a result, the Lotvorschicht leaves the eutectic region and becomes the hypereutectic material, which in turn the melting point and the temperature resistance of a solder layer 51 is increased. The in the diffusion barrier layer 55 diffused indium atoms lead there to an excretion in the diffusion barrier layer 55 , which is why this layer now also as a precipitation layer 54 referred to as. This excretory layer 54 has a higher hardness, which is useful to the plastic deformation at temperature change from the soldered edge better on the ductile center, in particular on the carrier film 51 to steer. In the center of the soldering system 5 remains the very ductile carrier layer 51 exist in their ductile design.

Sie wird flankiert durch die Diffusionsschichten 55 bzw. die Ausscheidungsschicht 54, die aus der Diffusionsschicht 55 resultiert, gegenüber weiteren Diffusionen aus der Lotschicht 52 geschützt. Die Duktilität und die Temperaturwechselbeständigkeit des gesamten Logverbundes 5 bleiben somit bestehen. It is flanked by the diffusion layers 55 or the excretory layer 54 coming from the diffusion layer 55 results, compared to other diffusions from the solder layer 52 protected. The ductility and thermal shock resistance of the entire log composite 5 stay that way.

In einer Ausgestaltungsform der Erfindung weisen die beiden Lotvorschichten 56 bzw. die daraus resultierende Lotschichten 52 unterschiedliche chemische Zusammensetzungen und somit unterschiedliche Schmelzpunkte auf. Dies ermöglicht es, dass die unterschiedlichen Bauteile sequentiell nacheinander gelötet werden können. So ist es z.B. möglich, zunächst den Lotverbund 5 durch eine Temperaturbehandlung am Schaltungsträger 2 anzulöten. Dies kann beispielsweise durch ein Warmwalzen unter Druck erfolgen. Nach dem Abkühlen des Lotverbundes 5 und des Schaltungsträgers 2 findet der bereits beschriebene Diffusionsprozess von Legierungselementen in die Diffusionssperrschicht 55 unter Bildung der Ausscheidungsschicht 54 statt. Der Schmelzpunkt des nun entstandenen übereutektischen Lotes in der Lotschicht 52 erhöht sich nunmehr. In einem weiteren Schritt kann nun die Lotvorschicht 56‘ ebenfalls einer Temperaturbehandlung unterzogen werden, wobei deren Schmelztemperatur über der ursprünglichen Schmelztemperatur der Lotvorschicht 55 liegt. Auf diese Art und Weise kann der bereits mit dem Lotverbund bestückte Schaltungsträger sehr genau auf der metallischen Bodenplatte 3 oder direkt auf dem Kühlkörper 32 positioniert werden. Es erfolgt ein zweiter Lötvorgang, bei dem ebenfalls die beschriebene Diffusion in die Diffusionssperrschicht erfolgt. In one embodiment of the invention, the two solder pre-layers 56 or the resulting solder layers 52 different chemical compositions and thus different melting points. This allows the different components to be sequentially soldered sequentially. So it is possible, for example, first the braid 5 by a temperature treatment on the circuit carrier 2 to solder. This can be done for example by hot rolling under pressure. After cooling the solder bond 5 and the circuit carrier 2 finds the already described diffusion process of alloying elements in the diffusion barrier layer 55 forming the precipitate layer 54 instead of. The melting point of the now hypereutectic solder in the solder layer 52 is now increasing. In a further step, the solder pre-coat can now 56 ' also be subjected to a temperature treatment, wherein the melting temperature above the original melting temperature of the Lotvorschicht 55 lies. In this way, the already equipped with the solder composite circuit carrier can be very accurate on the metallic bottom plate 3 or directly on the heat sink 32 be positioned. There is a second soldering process, in which also takes place the described diffusion into the diffusion barrier layer.

Grundsätzlich ist es zweckmäßig, die Diffusionssperrschicht 55, 55‘ durch ein anderes Metall als das Metall der Trägerfolie 51 auszugestalten. Es hat sich Silber oder Kupfer als reines Metall in der Diffusionssperrschicht als zweckmäßig herausgestellt. Es kann jedoch auch zweckmäßig sein, die Trägerschicht 51, die beispielsweise eine Dicke von 80 bis 100 µm aufweist, so auszugestalten, dass lediglich im Randbereich eine Diffusion aus der Lotvorschicht 56, 56‘ stattfindet, so dass bevorzugt weniger als 10 µm der Gesamtdicke der Trägerschicht 51 durch die Diffusion aus der Lotvorschicht, insbesondere von Indium- bzw. Zinn-Diffusion kontaminiert ist. Bei Kontaminierung von weniger als 10 µm kann dieser Bereich der Trägerschicht 51 bereits als Diffusionssperrschicht 55 fungieren. Das Aufbringen eines weiteren Materials auf die Trägerschicht 51 als Diffusionssperrschicht 55, 55‘ ist zweckmäßig aber nicht absolut erforderlich, wenn das Material der Trägerschicht 51 bezüglich des Legierungselementes aus der Lötvorschicht 56 einen so geringen Diffusionskoeffizient aufweist, dass die Diffusion dieses Materials bereits in den Randlagen der Trägerschicht 51 vernachlässigbar wird und dort eine Verfestigungen bewirkt. In principle, it is expedient to use the diffusion barrier layer 55 . 55 ' by a metal other than the metal of the carrier film 51 embody. It has been found that silver or copper as pure metal in the diffusion barrier layer as appropriate. However, it may also be appropriate, the carrier layer 51 , which for example has a thickness of 80 to 100 microns, so to design that only in the edge region, a diffusion from the Lotvorschicht 56 . 56 ' takes place, so that preferably less than 10 microns of the total thickness of the carrier layer 51 is contaminated by the diffusion from the Lotvorschicht, in particular of indium or tin diffusion. At contamination of less than 10 microns, this area of the carrier layer 51 already as a diffusion barrier layer 55 act. The application of another material to the carrier layer 51 as a diffusion barrier layer 55 . 55 ' is convenient but not absolutely necessary if the material of the carrier layer 51 with respect to the alloying element from the Lötvorschicht 56 has such a low diffusion coefficient that the diffusion of this material already in the peripheral layers of the carrier layer 51 becomes negligible and causes a solidification there.

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • US 8431445 B2 [0004] US 8431445 B2 [0004]
  • DE 102010021765 A1 [0004] DE 102010021765 A1 [0004]

Zitierte Nicht-PatentliteraturCited non-patent literature

  • „Low Temperature Fluxless Bonding Technique using In-Sn Composite“, S. Choe, W. W. So and C. C. Lee in 2000 Electronic Components and Technology Conference [0004] "Low Temperature Fluxless Bonding Technique Using In-Sn Composite", S. Choe, WW So and CC Lee in 2000 Electronic Components and Technology Conference [0004]
  • “A Fluxless Sn-In Bonding Process Achieving High Re-Melting Temperature“, R. W. Chuang, S. Choe and C. C. Lee in 2001 Electronic Components and Technology Conference [0004] "A Fluxless Sn-In Bonding Process Achieving High Re-Melting Temperature", RW Chuang, S. Choe and CC Lee in the 2001 Electronic Components and Technology Conference [0004]

Claims (10)

Baugruppe mit mindestens zwei Tragkörpern (3) und einen die Tragkörper (3) verbindenden Lotverbund (5), dadurch gekennzeichnet, dass der Lotverbund fünf Materialschichten aufweist, eine duktile Trägerschicht (51) mit jeweils einer Lotschicht (52, 52‘) auf jeder Seite und jeweils einer zwischen den Lotschichten (52) und der Trägerschicht (51) angeordneten Diffusionssperrschicht (55, 55‘), wobei die Lotschichten (52) ein Material umfasst, das einen niedrigeren Schmelzpunkt aufweist als die Trägerschicht (51). Assembly with at least two supporting bodies ( 3 ) and a the supporting body ( 3 ) connecting solder joint ( 5 ), characterized in that the solder composite has five material layers, a ductile carrier layer ( 51 ) each having a solder layer ( 52 . 52 ' ) on each side and one between the solder layers ( 52 ) and the carrier layer ( 51 ) arranged diffusion barrier layer ( 55 . 55 ' ), wherein the solder layers ( 52 ) comprises a material having a lower melting point than the carrier layer ( 51 ). Baugruppe nach Anspruch 1, dadurch gekennzeichnet, dass die Lotschichten (52, 52‘) aus übereutektischen Material bestehen. Assembly according to claim 1, characterized in that the solder layers ( 52 . 52 ' ) consist of hypereutectic material. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Diffusionssperrschicht (55, 55‘) ein im Wesentlichen reines Metall, insbesondere Silber oder Kupfer umfasst. Assembly according to one of the preceding claims, characterized in that the diffusion barrier layer ( 55 . 55 ' ) comprises a substantially pure metal, in particular silver or copper. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass in die Trägerschicht topographische Vertiefungen (53), insbesondere in Form von Rillen eingebracht sind. Subassembly according to one of the preceding claims, characterized in that topographic depressions ( 53 ), in particular in the form of grooves are introduced. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Tragkörper (3) in Form einer metallischen Bodenplatte (31) und/oder in Form eines Kühlkörpers (32) ausgestaltet ist. Assembly according to one of the preceding claims, characterized in that the supporting body ( 3 ) in the form of a metallic base plate ( 31 ) and / or in the form of a heat sink ( 32 ) is configured. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine metallische Bodenplatte (31) und ein Kühlkörper (32) sowie ein Schaltungsträger (2) vorgesehen sind und jeweils ein Lotverbund (5, 5‘) zwischen dem Schaltungsträger (2) und der Bodenplatte (31) sowie zwischen der Bodenplatte und dem Kühlkörper vorgesehen ist. Assembly according to one of the preceding claims, characterized in that a metallic base plate ( 31 ) and a heat sink ( 32 ) as well as a circuit carrier ( 2 ) are provided and each a Lotverbund ( 5 . 5 ' ) between the circuit carrier ( 2 ) and the bottom plate ( 31 ) and between the bottom plate and the heat sink is provided. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die duktile Trägerschicht (51) auf der Basis von Zinn, insbesondere mit einem Legierungszusatz von Antimon und oder Wismut mit einem Legierungsbestandteil von weniger als 1 Gew. % besteht. Assembly according to one of the preceding claims, characterized in that the ductile carrier layer ( 51 ) based on tin, in particular with an alloying addition of antimony and or bismuth with an alloying constituent of less than 1% by weight. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Lotschichten (52, 52‘) aus unterschiedlichen Materialien bestehen die unterschiedliche Schmelzpunkte aufweisen. Assembly according to one of the preceding claims, characterized in that the solder layers ( 52 . 52 ' ) consist of different materials which have different melting points. Baugruppe nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das die Lotschicht (52, 52‘) auf Basis einer übereutektischen Zusammensetzung von Indium-Zinn oder Zinn- Wismut oder Indium-Zinn-Wismut besteht. Assembly according to one of the preceding claims, characterized in that the solder layer ( 52 . 52 ' ) is based on a hypereutectic composition of indium tin or tin bismuth or indium tin bismuth. Verfahren zur Herstellen einer Baugruppe wobei eine duktile Trägerschicht (51) beidseitig jeweils zunächst mit einer Diffusionssperrschicht (55, 55‘) und anschließend mit einer weniger als 20 µm dicken Lotvorschicht (56, 56‘) aus einer im Wesentlichen eutektischen Legierung versehen wird , wobei der Schmelzpunkt der eutektischen Legierung niedriger als der Schmelzpunkt des Trägerschichtmaterials ist, wonach dieser so erzeugte Lotverbund (5) zwischen zwei Tragkörpern (3) positioniert wird und diese Anordnung einer Temperaturbehandlung unterzogen wird, wobei die angewendete Temperatur unter dem Schmelzpunkt der Trägerschicht (51) und über dem Schmelzpunkt der Lotvorschichten (56, 56‘) liegt, wonach ein Schmelzpunkterhöhung der Lotvorschichten (56, 56‘) durch Diffusion von Legierungsbestandteilen in die Diffusionssperrschicht (55, 55‘) erfolgt und eine Lotschicht 52, 52‘ entsteht. Method for producing an assembly, wherein a ductile carrier layer ( 51 ) on both sides each first with a diffusion barrier layer ( 55 . 55 ' ) and then with a less than 20 microns thick Lotvorschicht ( 56 . 56 ' ) is made of a substantially eutectic alloy, wherein the melting point of the eutectic alloy is lower than the melting point of the carrier layer material, after which this soldering composite ( 5 ) between two supporting bodies ( 3 ) and this arrangement is subjected to a temperature treatment, wherein the applied temperature below the melting point of the carrier layer ( 51 ) and above the melting point of the solder pre-layers ( 56 . 56 ' ), according to which a melting point increase of the solder pre-layers ( 56 . 56 ' ) by diffusion of alloying constituents into the diffusion barrier layer (US Pat. 55 . 55 ' ) and a solder layer 52 . 52 ' arises.
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US12087723B2 (en) * 2020-09-14 2024-09-10 Infineon Technologies Austria Ag Diffusion soldering with contaminant protection

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