DE102014017063A1 - Process for the production of liquid-processed mixed metal oxide layers and their use in electrical, electronic and opto-electronic components - Google Patents
Process for the production of liquid-processed mixed metal oxide layers and their use in electrical, electronic and opto-electronic components Download PDFInfo
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- DE102014017063A1 DE102014017063A1 DE102014017063.2A DE102014017063A DE102014017063A1 DE 102014017063 A1 DE102014017063 A1 DE 102014017063A1 DE 102014017063 A DE102014017063 A DE 102014017063A DE 102014017063 A1 DE102014017063 A1 DE 102014017063A1
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 229910003455 mixed metal oxide Inorganic materials 0.000 title abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 19
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 19
- 239000002800 charge carrier Substances 0.000 claims abstract description 18
- 239000012702 metal oxide precursor Substances 0.000 claims abstract description 18
- 239000002105 nanoparticle Substances 0.000 claims abstract 5
- 239000000203 mixture Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 6
- 239000007791 liquid phase Substances 0.000 claims description 5
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 238000005245 sintering Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 abstract description 7
- 238000012986 modification Methods 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000867 polyelectrolyte Polymers 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
Abstract
Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung von flüssig prozessierten, dünnen Mischmetalloxidschichten sowie deren Verwendung als Elektrode, Elektrodenmodifikationsschicht, Ladungsträgerrekombinationsschicht oder allgemein Ladungsträgertransportschicht in elektrischen, elektronischen oder opto-elektronischen Bauelementen. Ein erfindungsgemäßer Lösungsansatz zur Herstellung dieser Mischmetalloxidschichten besteht darin, verschiedene Metalloxidvorläufer miteinander zu vermischen und hernach zu einer amorphen, semikristallinen oder vollkristallinen Schicht chemisch, thermisch oder photochemisch umzuwandeln. Eine weitere erfindungsgemäße Möglichkeit eine Mischmetalloxidschicht herzustellen besteht darin, einen oder mehrere Metalloxidvorläufer mit Metalloxidnanoteilchen zu mischen. Durch die erfindungsgemäße Herstellung von Mischmetalloxidschichten ist es möglich, diese Schichten hinsichtlich ihrer elektronischen und dielektrischen Eigenschaften so einzustellen, dass sie vorteilhaft zu den benachbarten Schichten in einem elektrischen, elektronischen oder opto-elektronischen Bauelement verwendet werden können.The present invention relates to a process for the preparation of liquid-processed, thin Mischmetalloxidschichten and their use as electrode, electrode modification layer, charge carrier recombination or generally charge carrier transport layer in electrical, electronic or opto-electronic devices. An inventive approach for the preparation of these Mischmetalloxidschichten is to mix different metal oxide precursors with each other and then chemically, thermally or photochemically convert to an amorphous, semi-crystalline or fully crystalline layer. Another possibility according to the invention of producing a mixed metal oxide layer consists in mixing one or more metal oxide precursors with metal oxide nanoparticles. The production according to the invention of mixed metal oxide layers makes it possible to adjust these layers with respect to their electronic and dielectric properties such that they can be used advantageously to the adjacent layers in an electrical, electronic or optoelectronic component.
Description
Die vorliegende Erfindung betrifft die Herstellung und Verwendung von flüssigprozessierten Misch-Metalloxidschichten als Elektrode, Elektrodenmodifikationsschicht, Ladungsträgerrekombinationsschicht oder allgemein Ladungsträgertransportschicht in elektrischen, elektronischen oder opto-elektronischen Bauelementen, z. B. Dünnschichtsolarzellen oder -Leuchtdioden.The present invention relates to the preparation and use of liquid-processed mixed metal oxide layers as electrode, electrode modification layer, charge carrier recombination layer or generally charge carrier transport layer in electrical, electronic or opto-electronic components, eg. B. thin-film solar cells or light-emitting diodes.
Die Produktion von, aus der Lösung prozessierten, Dünnschichtsolarzellen und -Leuchtdioden erfordert oft die Verwendung von Elektrodenmodifikationsschichten zur Angleichung der Austrittsarbeiten der Elektroden auf der einen Seite und der Elektronen- oder Lochleitenden Energieniveaus der photoaktiven Schichten andererseits. Darüber hinaus benötigen Dünnschichtsolarzellen mit Vielfachübergang stets Ladungsträgerrekombinationsschichten. Beiden Schichten ist gemein, dass diese letztlich einen Ladungsträgertransport leisten.The production of solution-processed thin-film solar cells and light-emitting diodes often requires the use of electrode modification layers to equalize the work functions of the electrodes on one side and the electron or hole energy levels of the photoactive layers on the other. In addition, multi-junction thin film solar cells always require charge carrier recombination layers. Both layers have in common that they ultimately make a charge carrier transport.
Stand der Technik ist derzeit die Verwendung von transparenten leitfähigen Polymeren (z. B. PEDOT:PSS, Handelsname „Clevios” der Firma Heraeus u. a.), Polyelektrolyten und (gegebenenfalls dotierten) Metalloxiden. Mit ersteren lassen sich aufgrund der hohen Austrittsarbeit jedoch nur Anodenkontakte realisieren und die Auswirkungen auf die Langzeitstabilität dieser stark hygroskopischen Materialien auf den Schichtaufbau eines opto-elektronischen Bauelements werden oft negativ beurteilt. Allerdings sind diese Materialien mit allen üblichen großtechnischen Verfahren zur Flüssigprozessierung, wie Druck- und Beschichtungsprozesse, sehr gut zu verarbeiten. Eine weitere Lösung betrifft die Verwendung von Polyelektrolyten wie PEI und PEIE [z. B.
Aufgabe der vorliegenden Erfindung ist daher die Realisierung einer Mischmetalloxid-Ladungsträgertransportschicht durch Flüssigprozessierung auf Basis mindestens eines Metalloxidvorläufers und mindestens einer zweiten Komponente, mit dem zum einen der Einsatz von Vakuumtechnik vermieden werden kann und zum anderen die elektronischen und dielektrischen Eigenschaften der Schichten einstellbar sind.The object of the present invention is therefore to realize a mixed-metal oxide charge carrier transport layer by liquid processing based on at least one metal oxide precursor and at least one second component with which the use of vacuum technology can be avoided and the electronic and dielectric properties of the layers can be set.
Erfindungsgemäß gelingt die Lösung dieser Aufgabe mit den Merkmalen des ersten Patentanspruches. Weitere vorteilhafte Ausgestaltungen der erfindungsgemäßen Lösung sind in den Unteransprüchen angegeben.According to the invention, the solution of this problem succeeds with the features of the first claim. Further advantageous embodiments of the solution according to the invention are specified in the subclaims.
Mit der vorliegenden Erfindung werden lösungsprozessierte Mischmetalloxid-Ladungsträgertransportschichten für opto-elektronische Bauelemente, insbesondere Dünnschichtsolarzellen und -Leuchtdioden, realisiert. Deshalb wird erfindungsgemäß vorgeschlagen, zuerst verschiedene Metalloxidvorläufer zu mischen und danach aus der Lösung aufzubringen. Anschließend wird diese Schicht thermisch, chemisch oder photochemisch in eine amorphe bzw. semikristalline oder kristalline deckende dünne Schicht umgewandelt. Diese Schicht hat hernach die gewünschten elektronischen Eigenschaften.Solution-processed mixed metal oxide charge carrier transport layers for optoelectronic components, in particular thin film solar cells and light emitting diodes, are realized with the present invention. Therefore, the invention proposes to first mix different metal oxide precursors and then apply it from the solution. Subsequently, this layer is thermally, chemically or photochemically converted into an amorphous or semicrystalline or crystalline opaque thin layer. This layer then has the desired electronic properties.
Die Herstellung und Verwendung von flüssig prozessierten, dünnen Metalloxidschichten, u. a. in opto-elektronischen Bauelementen, ist bereits mehrfach in Patenten beschrieben worden. So wird z. B. von
Eine nach dem erfindungsgemäßen Verfahren hergestellte Elektrode, Elektrodenmodifikationsschicht, Ladungsträgerrekombinationsschicht oder allgemein Ladungsträgertransportschicht bietet zum einen die Möglichkeit der Anpassung an die elektronischen Energiebänder der benachbarten Materialien und zum anderen einstellbare dielektrische Eigenschaften. Zusätzlich kann auch die Stabilität etwaiger benachbarter metallischer Elektroden mit einer Mischmetalloxid-Elektrodenmodifikationsschicht erhöht werden. Eine Verwendung der nach dem erfindungsgemäßen Verfahren hergestellten Elektrode, Elektrodenmodifikationsschicht, Ladungsträgerrekombinationsschicht oder allgemein Ladungsträgertransportschicht in elektrischen, elektronischen oder opto-elektronischen Bauelementen ist ebenso denkbar.An electrode prepared by the method according to the invention, electrode modification layer, charge carrier recombination layer or generally charge carrier transport layer on the one hand offers the possibility of adaptation to the electronic energy bands of the adjacent materials and on the other hand adjustable dielectric properties. In addition, the stability of any adjacent metallic electrodes with a mixed metal oxide electrode modification layer can also be increased. A use of the electrode produced according to the method of the invention, electrode modification layer, charge carrier recombination layer or generally charge carrier transport layer in electrical, electronic or opto-electronic components is also conceivable.
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- WO 2013144687 [0003] WO 2013144687 [0003]
- KR 20080000902 [0003] KR 20080000902 [0003]
- WO 2007/040601 [0007] WO 2007/040601 [0007]
- US 2011/0175064 [0007] US 2011/0175064 [0007]
- WO 2007/079498 [0007] WO 2007/079498 [0007]
- WO 2007/079500 [0007] WO 2007/079500 [0007]
- WO 2010/040815 [0007] WO 2010/040815 [0007]
- WO 96/26907 [0007] WO 96/26907 [0007]
Zitierte Nicht-PatentliteraturCited non-patent literature
- Heeger et al. [0007] Heeger et al. [0007]
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE102014017063.2A DE102014017063A1 (en) | 2014-11-14 | 2014-11-14 | Process for the production of liquid-processed mixed metal oxide layers and their use in electrical, electronic and opto-electronic components |
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DE102014017063.2A DE102014017063A1 (en) | 2014-11-14 | 2014-11-14 | Process for the production of liquid-processed mixed metal oxide layers and their use in electrical, electronic and opto-electronic components |
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DE102014017063A1 true DE102014017063A1 (en) | 2016-05-19 |
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DE102014017063.2A Ceased DE102014017063A1 (en) | 2014-11-14 | 2014-11-14 | Process for the production of liquid-processed mixed metal oxide layers and their use in electrical, electronic and opto-electronic components |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116496658A (en) * | 2022-01-20 | 2023-07-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Crystalline amorphous hybrid zinc oxide nanoparticle ink, preparation method and application |
Citations (8)
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---|---|---|---|---|
WO1996026907A1 (en) | 1995-02-28 | 1996-09-06 | Studiengesellschaft Kohle Mbh | Microporous amorphous mixed metal oxides for form-selective catalysis |
DE69611618T2 (en) * | 1995-09-15 | 2001-08-23 | Rhone Poulenc Chimie | SUBSTRATE WITH A PHOTOCATALYTIC COATING OF TITANIUM DIOXIDE AND ORGANIC DISPERSIONS WITH TITANIUM DIOXIDE |
WO2007040601A1 (en) | 2005-03-17 | 2007-04-12 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
WO2007079500A2 (en) | 2006-01-04 | 2007-07-12 | The Regents Of The University Of California | Passivating layer for photovoltaic cells |
KR20080000902A (en) | 2006-06-28 | 2008-01-03 | 정진태 | Lithium battery using solvent-soluble modified polyimide |
WO2010040815A1 (en) | 2008-10-08 | 2010-04-15 | Sauerland Kunststoff Granulate Gmbh & Co. Kg | Method for manufacturing a metal electrode over a metal oxide layer |
US20110175064A1 (en) | 2010-01-21 | 2011-07-21 | Do-Hwan Kim | Light emitting device and method of fabricating the same |
WO2013144687A1 (en) | 2012-03-26 | 2013-10-03 | Jawaharlal Nehru Centre For Advanced Scientific Research | An organic solar cell and methods thereof |
-
2014
- 2014-11-14 DE DE102014017063.2A patent/DE102014017063A1/en not_active Ceased
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996026907A1 (en) | 1995-02-28 | 1996-09-06 | Studiengesellschaft Kohle Mbh | Microporous amorphous mixed metal oxides for form-selective catalysis |
DE69611618T2 (en) * | 1995-09-15 | 2001-08-23 | Rhone Poulenc Chimie | SUBSTRATE WITH A PHOTOCATALYTIC COATING OF TITANIUM DIOXIDE AND ORGANIC DISPERSIONS WITH TITANIUM DIOXIDE |
WO2007040601A1 (en) | 2005-03-17 | 2007-04-12 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
WO2007079500A2 (en) | 2006-01-04 | 2007-07-12 | The Regents Of The University Of California | Passivating layer for photovoltaic cells |
WO2007079498A2 (en) | 2006-01-04 | 2007-07-12 | The Regents Of The University Of California | Passivating layer for flexible electronic devices |
KR20080000902A (en) | 2006-06-28 | 2008-01-03 | 정진태 | Lithium battery using solvent-soluble modified polyimide |
WO2010040815A1 (en) | 2008-10-08 | 2010-04-15 | Sauerland Kunststoff Granulate Gmbh & Co. Kg | Method for manufacturing a metal electrode over a metal oxide layer |
US20110175064A1 (en) | 2010-01-21 | 2011-07-21 | Do-Hwan Kim | Light emitting device and method of fabricating the same |
WO2013144687A1 (en) | 2012-03-26 | 2013-10-03 | Jawaharlal Nehru Centre For Advanced Scientific Research | An organic solar cell and methods thereof |
Non-Patent Citations (1)
Title |
---|
Heeger et al. |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116496658A (en) * | 2022-01-20 | 2023-07-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Crystalline amorphous hybrid zinc oxide nanoparticle ink, preparation method and application |
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