DE102014008721B4 - Electrostatic inductor - Google Patents

Abstract

Arrangement for generating and / or forming an at least partially inhomogeneous electric field, comprising: a) at least one ground potential leading machine or plant part (I) as part of a housing for a preferably flowing medium; b) a source with at least one deviating from the ground potential, preferably positive electrical potential (V); c) one with the ground potential deviating, preferably positive electrical potential (V) electrically connected to this source, flat ring (3) made of an electrically conductive metal, in particular steel, each with an adjacent, ground potential leading machine or equipment part (I ) facing and facing away from the ring plane, a cross-sectional, parallel to the ring plane width (2b) and a diameter (2a + 2b); d) an ordered, single-layer system of particles (P, Q) of a metal or a metal alloy with a diameter (δ) of 1 mm or less: δ ≤ 1 mm, on the adjacent, ground potential leading machine or plant part (I) facing ring plane of the electrically conductive ring (3) for the purpose of increasing the strength of the electrostatic field; e) a the ring (3) at its one adjacent, ground potential leading machine or equipment part (I) facing away from the ring level, dielectric socket (6, 7, 8) having a U-shaped cross-section, the cross-sectional area has a width (2b) , and which projects beyond the level of the ring (3) facing the neighboring, ground potential-leading machine or plant part (I) by at least one height dimension (δ); f) a powder within the socket (6, 7, 8) above the ring (3) filling ceramic particles with a high dielectric constant (ε).

Description

The invention is directed to an arrangement for generating and / or forming an at least partially inhomogeneous electric field, comprising: at least one ground potential leading machine or plant part as part of a housing for a preferably flowing medium; a source with an electrical potential V deviating from ground potential; a flat ring of an electrically conductive metal electrically connected to the electrical potential V of this source, each having an adjacent, ground potential leading machine or equipment part facing and facing ring plane, a cross-section, parallel to the ring plane and a diameter; a the ring at its one adjacent, ground potential leading machine or equipment part facing away ring level, dielectric socket with a U-shaped cross-section whose cross-sectional area has a width, and over the adjacent, the ground potential leading machine or equipment part facing the ring extends at least by a height measure; a powder of ceramic particles with a high dielectric index filling the space within the socket above the ring.

Electrical and / or magnetic fields are used in a variety of applications. This includes, among other things, the generation of forces and / or torques on electrically conductive or current-carrying elements, for example in motors. This allows a wide variety of consumers to be driven.

If, for example, one wishes to accelerate a flow medium, a pump for a liquid flow medium or a compressor for a gaseous flow medium is usually coupled to a motor. However, there are not inconsiderable losses, namely frictional losses or leaks, etc. It would therefore be desirable to be able to act directly on the components of a flow medium, ie on its molecules or atoms.

In the US Pat. No. 3,267,859 an arrangement for generating and / or shaping an at least partially inhomogeneous field is described. At least one machine or plant part in a flowing medium carries ground potential. There is a source with at least one positive, electrical potential different from the ground potential. Furthermore, there are electrodes which are electrically connected to the positive potential of this source deviating from the ground potential. The electrodes are made of electrically conductive material. At the electrodes are small projections, but with which the electric field is distorted only locally at these projections, so that it can not accelerate flow medium.

From the DE 10 2010 060 762 A1 It is known to apply a dielectric layer on an electrode to increase the capacitance between the electrodes. However, this electrode is completely flat and therefore incapable of producing an inhomogeneous electric field.

The US 2004/0 161 332 A1 teaches that for the purpose of increasing the strength of the electrostatic field, a single layer system of "particles" is mounted on an electrode. These may include whisker-like crystals. It is further stated that the arrangement may be on the order of nanosize to macro size, resulting in "particle" sizes of 1 mm or less. In the US 2004/0 161 332 A1 Accordingly, an inhomogeneous electric field is generated, but only in the microscopic environment of whisker-like crystals, which can accelerate no flow medium.

With an electrically conductive ring, for example, an electrical potential or field can be built up relative to a housing. Charged particles experience a force in an electric field, the so-called Coulomb force. However, in order to be able to induce a technical acceleration, the electric field must be as strong as possible.

In addition, an electric field generated thereby acts only on charged particles. This is a problem with neutral atoms or molecules. For even if these consist of individual, charged particles, such as protons and electrons, the forces of the polar forces acting on them are opposite to each other; the protons tug in one direction, the electrons in the other. The resulting force is generally zero.

However, this can be different for molecules with an electric dipole moment such as water, H ₂ O. There, the central oxygen atom has a negative partial charge, the two Hydrogen atoms a total of just as large positive partial charge. However, the centers of these partial charges are spatially offset from each other, so that there is an electric dipole moment p .

In an electric field E , such molecules undergo an orientation such that their electric dipole moment p is set in parallel or antiparallel to the direction of the field E.

As a result of this orientation, the two opposing dipole centers of such molecules in an inhomogeneous electric field E ≠ const. experienced different forces F. Although these are antiparallel to each other, but not the same size, so that a total resulting non-zero force remains, which accelerates the molecule in question in the direction of the electric field E , according to the formula F = m · a .

It has been found that the following applies to this force: m · a = ( p · V) E , respectively.: a = ( p · ∇) E / m.

It can be seen that the higher the inhomogeneity or divergence ∇ E of the field E , the greater the acceleration.

This results in the problem initiating the invention of developing a generic arrangement in such a way that an electric field E can be generated whose inhomogeneity or divergence ∇ E is as strong as possible.

The solution to this problem is achieved in that the electrically conductive ring for the purpose of increasing the strength of the electrostatic field on its adjacent ground potential leading machine or equipment part facing ring level an ordered, single-layer system of particles of a metal or a metal alloy a diameter δ of 1 mm or less: δ ≦ 1 mm.

The diameter δ of the particles of a metal or a metal alloy may also be 100 μm or less: δ ≦ 100 μm; preferably at a diameter δ of 10 μm or less: δ ≦ 10 μm; preferably at a diameter δ of 1 μm or less: δ ≦ 1 μm; in particular with a diameter δ of 100 nm or less: δ ≦ 100 nm.

These small particles can be considered spherical. For example, they can be produced from liquid, molten droplets and then have a smooth surface with a uniform curvature, so they are spherical. If such largely spherical particles are lined up in a plane so that they lie as close as possible to each other, they do not have to touch, so they have a total of a much larger surface than the plane on which they lie. Because the ball surface F _K is F _K = 4πr ² , while the ball cross section F _{Q is} given to F _Q = πr ² .

It is true that spheres can not be placed next to each other without gaps; in a checkered arrangement of the balls, each ball is assigned a quadrilateral face F _V F _V = 4r ² , however: F _K / F _V = π ≈ 3.14.

Considering further that similar electrical charges q preferably sit on the surface of a conductive object, it can be seen that this results in a significantly increased charge storage capacity. This is comparable to the capacitance C of a capacitor.

The dissolution of the smooth, planar surface of the electrically conductive ring by the likewise electrically conductive, approximately spherical particles which are in electrical contact therewith thus significantly increases the "capacitance" or the charge storage capacity of the ring, and since the electrical charges q are the source of the electric field E , so that a significant increase in the electric field E can be achieved; each inhomogeneity of field E is amplified accordingly, and thus also the value a = ( p · ∇) E / m for the acceleration of a molecule with mass m and the electric dipole moment p .

This inhomogeneity is caused by the fact that the charge carriers are concentrated on an electrically conductive ring together with its particle surface. Looking at a sectional plane along a central axis through this ring, so all field lines go from the almost punktfömigen in cross-sectional ring cross-section and fill the whole space until they open into an opposite electrode. The field lines thus concentrate noticeably in the region of the electrically conductive ring, with the effect that appropriately aligned dipole molecules are accelerated toward this ring because the dipole center, which is closer to it, experiences a stronger attraction than the repulsion acting on the more distant dipole center.

For the production of a ring assembly according to the invention, the invention proposes the following procedure:
First, ring-shaped or segment-shaped insulators are inserted into an annular, groove-shaped or groove-shaped depression of a holder or a later part of a flow channel, wherein these have an overall approximately U-shaped cross-section. In the cross-sectionally U-shaped cavity, the ring is then inserted or fitted from an electrically conductive material. It is important to ensure that the free edges of the side legs of the cross-sectionally U-shaped insulators over the still visible end face of the ring of an electrically conductive material survive. This creates a quasi-kind of flat trough, in which the powder of micro- or nanoscopic particles can be poured into it, without falling over this edge thus produced.

In a following step, the assembly unit which has been completed so far is placed with the ring of an electrically conductive material, preferably together with the powder of micro- or nanoscopic particles poured thereon, between two preferably annular magnetic poles, preferably at the first position of a production line. The perpendicular magnetic field magnetizes the ring, which attracts the preferably magnetizable, micro- or nanoscopic particles.

The ring of an electrically conductive material can be connected to a voltage source, in particular to a DC voltage source.

The magnetic poles are excited with a pulsating magnetic field perpendicular to the visible end face of the ring; Of these, the micro- or nanoscopic particles are shaken batch by batch and thereby distributed in a single-layer. In this case, in the region of pronounced magnetic poles, it is possible for annular structures of the micro- or nanoscopic particles to be adjusted, in the center of which there is in each case one magnetic pole. Further away from such distinct magnetic poles, a structure having the circumferential shape of the ring may result in subsequent rows of micro- or nanoscopic particles.

Subsequently, the assembly unit can be transported to a second position of the production line. There, a ceramic paste is forced under vertical pressure into the remaining cavity in the annular groove above the ring and the micro- or nanoscopic particles. This ceramic paste flows around the micro- or nanoscopic particles and fills the gaps remaining between them according to the required τ = 1.05. After the interior is filled, the excess paste is scraped, scraped or cut.

Finally, this assembly unit is transported to a third position of the production line - a ceramic kiln where the ceramic paste is fired and solidifies into a solid body in which the micro- or nanoscopic particles are embedded.

It has proven to be advantageous for the ground-potential-carrying machine or system part to be a flow channel, preferably with a cross-section widening from a flow inlet in the direction of a flow outlet, in particular a diffuser. A flow section with a changing cross-section favors inhomogeneity of the field.

Further advantages result from the fact that the electrically conductive ring is located in the region of the flow outlet. There, the flow medium is to accelerate, which is done by attraction by means of this ring and the applied thereon micro- or nanoscopic particles.

The flow outlet may be oriented approximately radially to the main flow direction in the region of the inlet, in particular be designed annular.

It is within the scope of the invention that the cross-section of the flow channel, in particular diffuser, widened conically from the flow inlet to the flow outlet.

The invention recommends that the electrically conductive ring is located on the imaginary extension of the conical surface of the conically widening flow channel. As a result, a maximum inhomogeneous structure can be generated.

The invention can be further developed such that the electrically conductive ring is accommodated in a groove-shaped receptacle of a part of the enclosure which delimits the flow channel at least in regions.

According to the invention it is further provided that the part of the enclosure of the flow channel is curved with a groove-shaped receptacle for the electrically conductive ring in the flow channel or diffuser at least partially, for example in the manner of a funnel, in particular a funnel with a curved into the flow channel in cross-section. Thus, a gentle deflection from the axial flow direction at the inlet into the radial flow direction at the outlet is effected for the flow medium - turbulences in the flow are avoided, which could otherwise reduce the efficiency of the arrangement.

The electrically conductive ring should be made of a magnetic or magnetizable material and be magnetized. This allows him to magnetically attract and hold the micro- or nanoscopic particles during the manufacturing process.

It has been proven that the particles with a diameter δ of 1 mm or less on the adjacent, the ground potential leading machine or equipment part facing the plane of the electrically conductive ring made of a transition metal or an alloy with a transition metal, preferably as a main component of Alloy.

A preferred development of the invention is that the particles with a diameter δ of 1 mm or less on the adjacent, the ground potential leading machine or equipment part facing the plane of the electrically conductive ring made of a magnetic, preferably ferromagnetic metal or made of an alloy Such a metal, preferably as a main component of the alloy. By magnetic forces, the particles can be adjusted during manufacture on the one hand and on the other hand held.

The invention is further characterized in that the particles with a diameter δ of 1 mm or less on the adjacent, the ground potential leading machine or equipment part facing plane of the electrically conductive ring made of nickel or an alloy with nickel, preferably as the main component the alloy.

A preferred design rule states that the particles are wrapped with a diameter δ of 1 mm or less on the adjacent ground potential leading machine or equipment part facing the electrically conductive ring with a hardened mass, preferably with a ceramic mass, in particular with a fired, ceramic mass. This is intended to hold the micro- or nanoscopic particles, if necessary, to isolate them from one another and possibly also to protect them from direct contact with the flow medium.

Furthermore, there is the possibility that the particles having a diameter δ of 1 mm or less are arranged on the plane of the electrically conductive ring in the vicinity of the adjacent grounding machine or plant section at the intersection or vertices of a triangular lattice on the ring surface , preferably at the intersections or vertices of a lattice of equilateral triangles, in particular with an edge length or pitch t = τδ, where τ = 1.01 ... 1.5, preferably τ = 1.02 ... 1.2, in particular τ = 1.05 ... 1.1.

It is further desirable that the particles with a diameter δ of 1 mm or less on the adjacent, the ground potential leading machine or equipment part facing plane of the electrically conductive ring in the field of long-range order in several groups, each with a plurality, preferably n ₁ concentric circles with radius t, 2t,..., b -t, b are arranged and / or on a plurality, preferably n ₂ concentric circles with radius α - b; α + b + t, ..., α + b, where preferably n ₁ = πα / b and / or n ₂ = 2b / t are "almost" integers.

The source of the electrical potential V deviating from ground potential advantageously comprises a DC voltage source. This can cause a polar electric field, which exerts maximum acceleration on the flow particles. The voltage source does not have to be a high voltage source. Voltages below 10 kV, for example below 1 kV, are preferred. In particular below 500 V or voltages below 200 V or even below 100 V.

Following the idea of the invention, it can further be provided that a tunnel diode is arranged in the supply circuit between the source of the electrical potential V deviating from ground potential. This can u. a. regulate the voltage on the ring - and thus the strength of the electric field.

The tunnel diode can be connected between at least one feed terminal of the electrically conductive ring and ground potential, so that the potential difference between the electrically conductive ring and the ground potential is applied to the tunnel diode.

The tunnel diode should have a negative current-voltage characteristic between a voltage U ₁ and a voltage U ₂ > U ₁ , ie a current sinking with increasing voltage. Consequently, there is a local current maximum in the region of the lower voltage U ₁ and a local current minimum in the region of the upper voltage U _{2 of} this region.

Preferably, the lower voltage U ₁ or the upper voltage U ₂ > U ₁ , where the negative curve of the current-voltage characteristic ends, agrees with the voltage delivered by the DC voltage source. It can thus be achieved that only that amount of charge flows to the ring and the local, micro- or nanoscopic particles, which is required in order to keep the voltage on the ring of electrically conductive material constant.

Finally, it is the teaching of the invention that the maximum strength E _{11 of} the electrostatic field on its axis and the charge q of the inductor with the basic parameters V, a, b, c, δ, τ by one or more, preferably all of related to the following conditions: E ₁₁ = √ 3 q / 18πε ₀ α ² ; q = 512Vπ ³ ε ₀ α ² δ ^-1 f (ε) g (τ) [1 - (1 + b ² / c ² ) ^-0.5 ] * cos ^-1 (1-b / α); f (ε) ≡ (ε-1) / (ε + 1); g (τ) ≡ [(3 + √ 3 ) / τ + 1] ^-1 ; α ≥ 50b ≥ 125c; in which
ε _{0 is} the electrical constant,
ε >> 1 is the relative dielectric constant of the capacitor ceramic.

Further features, details, advantages and effects on the basis of the invention will become apparent from the following description of a preferred embodiment of the invention and from the drawing. Hereby shows:

an inventive arrangement with a vertical flow channel in a vertical section;

the detail A off with a section across an electrically conductive ring of the arrangement according to the invention;

a cut through the along the line BB with a plan view of the flow channel facing the top of the electrically conductive ring after and ;

the detail C off with an enlarged view of a section of the cut surface;

the detail A ₁ off with an enlarged view of a section through electrically conductive particles on the upper side of the electrically conductive ring;

the detail D off with a section across an electrically conductive ring along an electrical connection;

an electrical equivalent circuit diagram for the supply of the electrically conductive ring with a DC voltage using a tunnel diode;

the current-voltage characteristic of the tunnel diode off ; such as

a perspective with a broken section through the annular arrangement according to to illustrate the derivation of certain formulas.

Areas of application of an electrostatic field generator (EFG) according to the invention are the generation of heterogeneous electrostatic fields of high field strength; For example, to accelerate a working substance (AS) in energy facilities, such as turbines. As AS superheated vapor of a polar dielectric, for example H ₂ O, is assumed.

The exemplary setup of an EFG includes the following elements (the ):
I - diffuser;
II - distributor of the flow ASs;
III - ring channel;
IV - turbine guide system;
V - system of regeneration of spent AS;
VI - Speed sensor for the working medium Ass

The electrical wiring diagram is in played.

All the above elements are fixed. The turbine rotor, heaters ASs and thermal insulation are on conditionally not shown. Component base of the electric scheme - the source of negative potential V - is located outside the ring channel.

The parts of the EFG are in the cavity of the gutter III installed (the . . ): 1 - the nanosphere; 2 - the polarizer; 3 - the ring; 4 - the needle, 5 . 6 , ... 9 - the insulators.

In the electric circuit, a battery E ₁ , resistors R ₁ , R ₂ and a tunnel diode (TD) are added. The . and illustrate different calculation schemes.

Components material: 1 - nickel; 2 - Ceramic CaTiO ₃ ; 3 - ferromagnetic stainless steel; III and 4 - antimagnetic stainless steel; 5 . 6 , ..., 9 - Sitall.

The nanosphere 1 of the given diameter δ = 30 nm ([3] p. 39) is produced by the steam condensation method. The single-layered system of n nanospheres (the ) is on the upper ground plane of the ring 3 , which is 2b wide and 2 (α + b) in diameter, fixed. The «near order» of the classification of nanospheres looks like a checkerboard with the step t (the ) out. The upper level of the ring 3 is filled (n thought) with n parallelograms, which are formed by two equilateral triangles, in whose summits the nanospheres are disposed. The side of the triangle is equal to t. The total amount the triangles is equal to 2n. The area S of the ring 3 (as well as the surface of the upper level Π of the polarizer 2 ), the area of the parallelogram S _p , the step t and the nanosphere number n at the level of the ring 3 are: t = τδ; τ = 1.05; S = 4παb; S _p = √3t ^2/2; n = S / S _p ≡ 8παb / (√3τ ² δ ² ). (1)

The "long-distance order" of the classification of nanospheres (the ) is called the system n _{1 of} the concentric circles with the radius r∈ [t; b] and the system n _{2 of} the concentric circles with the radius r∈ [α - b; α + b], where n ₁ = πα / b; n ₂ = 2b / t. (2)

The ring 3 rests on the annular insulator 8th , The cylinder surfaces of the ring 3 rely on insulators 6 and 7 , which are curved strips over the top surface of the ring 3 to the heights 6 protrude. The nanosphere layer of density 6 is from the top with the ceramic layer 2 the density c >> δ protected, the high polarizability is ensured because of the relative dielectric constant (RDK) ε = 150. The ability of the polarizer to fill the gaps between the nanospheres is ensured by the maximum allowable (at τ = 1.05) size of ceramic powder particles (δ ₁ = 1.5 nm = 1.5 x 10 ^-9 m).

It has to be mentioned that existing methods of nanosphere production ([3] chapter 1) do not allow a narrow particle size distribution and lead to the formation of an insulating layer on its surface. The first problem can be solved by approaching the conditions of metal evaporation, if as a "raw material" the nickel foil and as energy carrier of the laser beam are used. In other words, nickel vaporization is said to take place in the vicinity of the laser focus when a thin nickel strip is pulled through this environment at a set rate, and any vapors condensing on the cooled housing walls are removed from that environment ,

Consider as an example a compilation of the EFG. With regard to their diameter δ = 30 nm, precisely selected n nanospheres (n = 3.6 × 10 ¹³ pieces) are systemic on the surface of the ring 3 distributed. The ring surface is made by insulators 6 - 7 limited when the electrical system is switched off. The output potential of the nanospheres is V ₀ = 0.

We turn on the vertical magnetic field and start increasing the absolute size of the potential to V = +31V. The nanospheres 1 and the ring 3 magnetize. The vertical nanosphere movements are suppressed by the attraction of the ring. The system stabilizes at τ = 1.05 ( ). The ceramic paste charging fan turns on. The paste is placed under vertical pressure in the annular cavity of the gutter III enter, there flow around the nanospheres and fill the gaps between the nanospheres. The charging fan forms a paste layer of density c and turns off. The paste over the layer is cut away. The gutter III leading to the distributor II not yet welded (the ), wanders into the ceramic combustion chamber. After firing, the surface Π of the ceramic ring is ground. When burning at a temperature of 1200 ° C, the components are demagnetized.

Trapezoidal cut of the ceramic ring 2 (the ) ensures durability and tightness of the coupling, which is subject to the electrodynamic loads caused by movement of the working substance.

The intrinsic capacity C ₁ and the charge q _{1 of} the separated sphere, which is δ in diameter and has the potential V in the medium with RDK ε, are ([4] p. 359): C ₁ = 2πε ₀ εδ; q ₁ = C ₁ V, (3) where ε ₀ = 8.854 · 10 ^-12 F / m - the electrical constant.

wobei (bei δ₁ << δ) die größte Zahl von Nanosphären, welche von dem Punkt P₁ sichtbar sind, gleich 12 ist ( ) Dabei ist das Potential φ₁, das die Wechselwirkung der Nanosphäre P₁ mit dem Ring 3 und mit 12 Nanosphären kennzeichnet, φ₁ = V + (4πεε₀)^–1 Σ_i=1 ¹²q₁/I_i = [(3 + √(3)/τ + 1]V. (5) Consider an arbitrary nanosphere P ( ), from the edge of the ring 3 not further than two steps away. The distance | P _1-i | from the center of said nanosphere (point P ₁ ) to the center of the unshielded i-nanosphere is:

where (at δ ₁ << δ) the largest number of nanospheres, which are visible from the point P ₁ , the same 12 is ( ) The potential φ ₁ , which is the interaction of the nanosphere P ₁ with the ring 3 and with 12 nanospheres, φ ₁ = V + (4πεε ₀ ) ^-1 Σ _{i = 1} ¹² q ₁ / I _i = [(3 + √ (3) / τ + 1] V (5)

The capacity C ₁ (3) and the total charge q _{0 of} the nanosphere are given by the following equations: q ₀ = C ₁ φ ₁ ≡ 2πVεε ₀ δ [(3 + √3) / τ + 1] = 5.5q ₁ ≡ C (τ) · V. (6)

These correspond to the "correspondence principle": the capacitance C (τ) (6) at τ → ∞ is equal to the capacitance of the separated sphere C ₁ (3): C (τ) = C ₁ [(3 + √3) / τ + 1].

• 1. Die Montage-Einheit „Ringrinne” geht auf die erste Position der Fertigungsstraße – zwischen den Magnetpolen. Das senkrechte Magnetfeld magnetisiert den Ring 3, der die Nanosphären anzieht.
• 2. Der Ring 3 schließt zu der Quelle des negativen Potentials V an, dabei
• 3. werden die Nanosphären von pulsierendem senkrechtem magnetischem Feld absatzweise geschüttelt.
• 4. Die Montage-Einheit wird auf die zweite Position verlegt. Die Keramik-Paste wird unter dem senkrechten Druck in den Hohlraum der Ringrinne gedrückt. Die Paste umströmt die Nanosphären und füllt die Lücken zwischen ihnen entsprechend der verlangten τ = 1,05. Nachdem der Innenraum gefüllt wird, wird die überflüssige Paste abgeschnitten.
• 5. Die Montage-Einheit wird auf die dritte Position – in den Paste-Brennofen – verlegt, entsprechend der Technologie ihrer Polarisation.

Let us enumerate the ratios that increase the density η of the free charge on the surface of each nanosphere, which is not less than two steps t of cylindrical surfaces of the ring 3 removed are:

• 1. The assembly unit "ring channel" goes to the first position of the production line - between the magnetic poles. The vertical magnetic field magnetizes the ring 3 that attracts the nanospheres.
• 2. The ring 3 connects to the source of negative potential V, doing so
• 3. the nanospheres are shaken intermittently by pulsating vertical magnetic field.
• 4. The assembly unit is moved to the second position. The ceramic paste is pressed under the vertical pressure in the cavity of the annular groove. The paste flows around the nanospheres and fills the gaps between them according to the required τ = 1.05. After the interior is filled, the unnecessary paste is cut off.
• 5. The assembly unit is moved to the third position - in the paste kiln - according to the technology of its polarization.

The further increase in the size η ₀ is not associated with an additional energy input.

The surface density η _{0 of} the free charge will increase with the increase of the surface curvature H = 2 / δ, but on the surfaces of the internal cavities in the conductors, η ₀ = 0 ([2] p. 62; [4] p. 357) , So most of the conductor charge in the cavity of the EFG gets on the ring 3 remove portions of the nanospheres distributed, ie in the range of nanosphere tips (the ; ), where mutual repulsion of negative charges - free electrons - and repulsion of the free and in the surface layer migrating electrons from the negative charge of the ring 3 is taken into account ( ).

Given a fully charged nanosphere surface, in the EFG the average number η _{0 is} the area density of the free charge, given equations (1) - (6) given by η ₀ = q ₀ n / S.

As the surface charges shift up (the ), a spherical segment is formed in the nanosphere tip whose surface is S _c = πδh = πδ ^2/4 , where h = δ / 4 is the height of the segment and the arc length is τδ (the ). In other words, because of the charge shift up, the area density of the free charge has increased fourfold; According to (1) - (6), the average size of the surface density η _{0 of} the free charge in the EFG is 5.5 × 4 = 22 times greater: η ₀ = ₀ = 4η 4q ₀ n / S = ₀ 44πVεε δ · 8παb (√3τ ² δ ^{2) -1} / (4παb) ≡ 88πVεε ₀ / ⁽² √3τ δ) = 144Vεε ₀ / δ, (7) the final result (7) being much simplified by reducing its size to 0.54%.

The density of the bound charge η (P) at an arbitrary separation point P of the surface Π, which separates the medium of the working substance from the medium of the solid dielectric, we calculate according to the following formula ([2] §26) (see appendix): η (P) = e (2πc ² ε) ^-1 · f (ε) cos ³ Θ _i ; f (ε) ≡ (ε-ε ₁ ) / (ε + ε ₁ ); ε ₁ = 1, (8) in which
e is the charge value of the free charge;
Θ _{i is} the angle of the perpendicular deviation of the beam PQ _{i connecting} the point P to the center i-nanosphere - the point Q _i - ( );
i = 1, 2, ... n ₂ - 1, n ₂ ;
c is the height of the cone family with a common peak at point P (measured with ± δ / 2 deviation);
ε ₁ (= 1) is the RDK of the working medium ASs;
ε (= 150) is the RDK of the calcium titanate CaTiO ₃ .

Let us replace the free charge e by its differential dq (the ) and take note of the record (7): e = dq = η ₀ rdrdφ = 144Vε ₀ εδ ^-1 rdrdφ; (9) where r, φ are polar coordinates in the plane BB which includes the peaks of nanospheres (the ). Insertion (9) in (8) gives the following expression of the bound charge density differential: dη = 144Vε ₀ εδ ^-1 (2πc ² ε) ^-1 f (ε) cos ³ θrdr * dφ = (72 / πδc ² ) ε ₀ f (ε) c ³ (c ² + r ² ) ^-1.5 rdrdφ ; cos θ c (c ² + r ² ) ^-0.5 ; dη = E (c ² + r ² ) ^-1.5 rdrdφ; E ≡ (72 / πδ) Vcε ₀ f (ε); rε [0; b]; φ ε [0; 2π]. (10)

The area density η (P) of the bound charges in the tip P of the imaginary cone, which is based on two systems of concentric circles (2), is given by the following integrals:

For characteristic sizes of the EFG - α = 0.25 m; b = 4c = 0.01 m - the values of the second (underlined) integral and the first integral in equation (11) behave as 0.32: 303. Thus, the size η of the surface charge density of the bonded charges in this case is practically independent of the radial displacement of the apex of the cone; therefore, the underlined expression in (11) can be disregarded. In consideration of (10) we get: η (P) 2πE [c ^-1 - (b ² + c ² ) ^-0.5 ] = 144Vε ₀ δ ^-1 f (ε) [1 - (1 + b ² / c ² ) ^-0.5 ]. (12)

The bound charge q of the EFG is expressed by the area density η (P) of Equation (12) multiplied by the area S = 4παb of the upper plane Π of the polarizer 2 marked (the ): q = 4παb ·η (P) = 576παbVε ₀ δ ^-1 f (ε) [1 - (1 + b ² / c ² ) ^-0.5 ], τ = 1.05. (13)

Detailed calculations considering equations (6) and (7) lead to an exact formula that reflects the strong dependence of q (τ): q = (64 / √3) (π / τ) ² (V / δ) αbε ₀ [(3 + √3) / τ + 1] * f (ε) [1 - (1 + b ² / c ² ) ^-0.5 ] (13 ')

As an example, the charge q is to be calculated for the following parameters of the EFG: α = 0.25 m; b = 0.01 m; c = 0.0025 m; δ = 3 × 10 ^-8 m; V = 31 V; ε = 150; f (ε) = 0.9868; τ = 1.05; q = 0.031C. (14)

Calculation of the capacity C ₂ ([1] p. 23) and the charge q _{2 of} the ring 3 : C ₂ = 4π ² ε ₀ εα / ln (8α / b) = 2.47 × 10 ^-9 F; q ₂ = C ₂ V = 7.7 × 10 ^-8 C <<q; (15) at the same time the charge of the ring 3 8 orders of magnitude lower than the charge of the nanosphere system (1), (6): q _n ≡ q ₀ n = 44πVεε ₀ δ · 8παb / (√3τ ² δ ² ) = 6.24 K _π ; η ₁ = q / q _n = 5 × 10 ^-3 , q / q ₂ = 4 × 10 ⁵ ; (16) where η ₁ as the "isolation coefficient" of the EFG, with fixed choice of parameters (14), gives the magnitude of the ratio of the bound charge to the free charge that "generated" this bound charge. The last equation (16) allows the charge of the ring 3 to be disregarded in the record (7).

Starting with the calculation of the parameters of the AS current accelerator, we introduce the Cartesian coordinate system O ₁ X ₁ X ₂ X ₃ (the ) whose starting point O ₁ - lies on the axis GeFs at the height H ₀ above the plane,, wherein the plane Π contains the plus charge q = 0.031 C. The axis O ₁ X ₁ is directed vertically downwards.

The Cartesian components of the axisymmetric electrostatic field are: E = {E ₁ ; E ₂ ; E ₃ ); E _i √E _Xi (X ₁ ; X ₂ ; X ₃ ); i = 1; 2; 3; E ₁ >> E ₂ ≡ E ₃ ; (17) where E _{i are} transcendental coordinate functions ([2], Exercise 18.2). For the calculation of the flow velocity v (x ₁ ) of the working substance ASs at the point of the axis O ₁ X ₁ (at the height ξ = H ₀ - x ₁ above the plane Π) we limit ourselves to the consideration of the potential Φ ₁ (ξ) and the field strength E ₁ (ξ) of the charge q of the ring with the radius α >> b ([1] p. 23): Φ ₁ (ξ) = q / [4πε ₀ ε ₁ √ (a ² + ξ ² )]; E ₁ (ξ) ≡ -dΦ ₁ / dξ = qξ / [4πε ₀ ε ₁ (α ² + ξ ² ) ^1.5 ]; ε ₁ = 1. (18)

The function E ₁ (ξ) reaches at ξ ₁ = α / √2 ≡ h ₀ the maximum value E ₁ (ξ ₁ ) ≡ E ₁₁ and at ξ ₀ ≡ H ₀ the minimum value (in the cavity of the diffuser) E ₁₀ .

The values of example (14) result in: α = 0.25 m; h ₀ = 0.1768 m; H ₀ = 0.5 m; q = 0.031 C; E ₁₁ = q (α / √2) / [4πε ₀ (α ² + α ^2/2 ) ^1.5 ] ≡ ≡ √3q / (18πα ² ε ₀ ) = 1.716 x 10 ⁹ V / m; E ₁₀ = qH ₀ [4πε ₀ (α ² + H ₀ ² ) ^1.5 ] ^-1 = 7.975 × 10 ⁸ V / m. (19)

Calculate the velocity v _{1 of} the outflow of vapor from the diffuser with respect to electrodynamic factors. For the inherent dipole moment P of the molecule H ₂ O, the polarizability L and the total dipole moments P _i in the fields E _1i (17) ([2] p. 179, [6] Tab. 16, 92): P = 6.1 × 10 ^-30 C · m; L = 1.444 x 10 ^-30 m ³ ; (20) P _i = E _1i Lε ₀ + P; i = 0.1; P ₀ = 6.11 · 10 ^-30 C · m; P ₁ = 6,122 · 10 ^-30 C · m (21)

The polarization parameters of the molecules β _i , the cosine average values v _{i of} the angles between vector directions P _i and E _i ([2] p. 181), and the potential energies of the molecules U _i in the fields E _i at the temperature T ₁ = 383K are: β _i = P _i E _1i / kT _i ; v _i = cthβ _i - 1 / β _i ; U _i = -P _i E _1i ; v _i = 0.1; (22) β ₀ = 0.921; β ₁ = 1.9866; v ₀ = 0.2909; v ₁ = 0.535; | U ₀ | = 1.4175 x 10 ^-21 J; | U ₁ | = 5.62 x 10 ^-21 J; (23) where k = 1.3807 x 10 ^-23 J / K - the Boltzmann constant.

The entrance of the vapor EFGs into the diffuser neck with the radius r ₀ is at the height H ₀ above the plane Π, ie at the level x ₁ = 0. The entry vapor velocity is v ₀ = 100 m / s. The mass of the molecule H ₂ O m = 3 × 10 ^-26 kg. The outflow velocity of the steam from the diffuser v ₁ = [v ₀ ² + 2 (| U ₁ | - | U ₀ |) / m] ^0,5 = 539 m / s. (24) is high enough for further use in the turbine (without additional steam heating).

The highest reduced molecular energy W ₁ is 180 times lower than the energy I of the ionization of the molecule H ₂ O: W ₁ = | U ₁ | + kT ₁ = 1.09 x 10 ^-20 J; I = 12.6 eV = 2 · 10 ^-18 J >> W ₁ . (25)

Therefore, the (inadmissible) ionization of the molecules of the EFG in the diffuser is hardly likely.

Thus, the ordered through the field E, neutral polar molecules ASs from the top in the range of the peak strength values (BSSW) retracted ([4], page 363) and carried away vertically downwards with an oncoming flow ASs. Under the conditions considered here, the BSSW has the form of a thin-film sphere with the radius h0 = α / √2, the center of which is at the point O of the plane Π (the ) lies. The layer is bounded by a vertical cylindrical surface of radius r ₀ = 0.3α.

The positive application effect of the EFG is due to the uniquely high surface area of the nanoparticle space unit: 10 ⁸ m ² / m ³ . It is necessary to note that the GEFs mounting energy intensity is high and the consumable capacity is low.

The basis of the working principle of the electric circuit diagram of the EFG is the tunneling effect, which is that electrons pass through the potential barrier of the pn junction without changing their force. Semiconductor material (germanium, arsenide gallium) with admixtures of foreign atoms in very high concentration (up to 10 ²¹ impurities per 1 cm ³ ) is used to generate the tunnel effect, while normally the concentration of admixtures in semiconductors does not exceed 10 ¹⁵ cm ^-3 ,

The semiconductors of such high impurity content are called "degenerate" and their properties are very close to the properties of metals. The width of the pn junction turns out to be very small (~ 0.01 micron), resulting in a significant increase in the electric field strength on the junction (~ 10 ⁸ V / m). At these ratios, there is a finite probability that an electron moving in the direction of the very narrow barrier will pass through this barrier (as through a "tunnel") and the free state with equal energy on the other side of the barrier layer busy. The phenomenon described was called "tunnel effect" ([5] §5-4).

Tunnel diodes (TD) operating at frequencies up to 10 ¹¹ Hz. The duration of a tunnel junction is t _T ~ 10- ¹³ s.

On the the current-voltage characteristic (SSK) pn junction is shown with the tunneling effect. On the line OA, the forward voltage increase U leads to the rise of the forward current I. The maximum forward current I ₊ corresponds to the forward voltage U ₁ (the point A). The minimum forward current I _- corresponds to the forward voltage U ₂ (the point B). Changing the source polarity to 180 ° will cause the tunneling current to be reversed. With the rise of the reverse voltage U ₀ , the tunnel current increases linearly. In this way, the tunnel effect lacks the one-sided conductivity of the pn junction.

The main feature of SSK is the following: At the forward voltage U> U ₁ , the forward tunnel current will drop sharply to I _- and will stop at U = U ₂ . The curve 1, which corresponds to the electrical breakdown of the pn junction, is correct for U ∈ [U ₂ ; U ₃ ] with the curve 2 of the diffusion current. For the "negative" junction resistance of the pn junction, the following applies: R _- = + ΔU / (- ΔI) = (U ₂ - U ₁ ) / (I _- - I ₊ ). (26)

If the parameters of the electrical circuit diagram ( ) compensate (microscopic) decreases | ΔU | Fluctuations of the potential | V | = 31 V.

Example:

The battery voltage ( ) E ₁ = | V |; the resistance values are R ₁ = R ₂ = 10 ohms; the rheostat utilization coefficient is R ₁ : α = 0.5; the tunnel diode has the following parameters: U ₁ = 0.18 V; U ₂ = 2U ₁ ; I ₊ = 8I _- = 0.005A; R _- = -41.14 ohms; the potential drop | V | and the average compensation current i are associated with the following equations: | V | - | ΔV | = E ₁ + (αR ₁ + R ₂ + R _- ) i; i = (I ₊ + I _- / 2) = 0.0028 A, (27) from this | ΔV | = 0.073 V, this is the power used N = | V | · i = 0.087 W (28) do not exceed.

In deriving the above relationships, the following formulas were used (cf ): η (P) = e (2πc ² ε ₂ ) ^-1 cos ³ θ * (ε ₂ -ε ₁ ) / (ε ₂ + ε ₁ ) C / m ² ; (5) where η (P) is the area density of the bound charges at the point P of the area Π separating two uniform dielectric media (1 and 2). These media are distinguished by relative dielectric constants (RDK) ε ₁ and ε ₂ . e denotes the negative point charge located at a distance c below the horizontal surface Π. θ is the angle between the direction of the normal to the surface Π and the radius vector (-r ₂ ), the charge e and the point P (the ) connects. The normal is directed downwards - from medium 1 to medium 2.

The Cartesian Coordinate System (PPS) Oxyz, whose axis Oz points downwards and passes through the charge e, which has been set to point A, is connected to the surface Π. The beginning of the KKS - the point O - is removed from the point A by the distance c. The reflection of the point A supplies the point A ', which is located on the other side of the surface Π - in the medium 1.

We determine the potential φ ₂ in the medium 2 as a potential, which is formed by two point charges - of the real charge e and of the fictitious charge e ', which is located in the point A': φ ₂ = (4πε ₀ ) ^-1 (e / ε ₂ r ₂ + e '/ ε ₂ r ₁ ), (1 *) in which
ε ₀ - is the electrical constant;
r ₂ and r ₁ - the distances of the observation point P to the points A and A '.

As potential φ ₁ in the medium 1 we determine as potential, which is formed by the fictitious charge e '', which is in the point A: φ ₁ = (4πε ₀₎ ^-1 e '' / ε ₁ r ₂ (2 *)

At the interface Π, the following conditions are met: r ₁ = r ₂ ; Z = 0; φ ₁ = φ ₂ ; ε ₁ · ∂φ ₁ / ∂n = ε ₂ · ∂φ ₂ / ∂n; (3 *) where: ∂ / ∂n (1 / r ₁ ) = -∂ / ∂n (1 / r ₂ ); ∂φ _i / ∂r = (∂φ _i / ∂z) cosθ; r _i cosθ = c; i = 1, 2 (4 *)

Substituting the expressions (1) * - (2) * into the last two equations (3 *), (4 *) yields: e "/ ε ₁ ε ₂ = e / ε ₂ r ₂ + e '/ ε ₂ r ₁ ; e '' · ∂ / ∂n (1 / r ₂ ) = e · ∂ / ∂n (1 / r ₂ ) + e '· ∂ / ∂n (1 / r ₁ ). (5 *)

Including the first equation (3 *) and (4 *) with the following abbreviations of the equations (5 *) leads to the following system of equations: e "/ ε ₁ = (e + e ') / ε ₂ ; e '' = e - e ', (6 *) from which are given terms for the fictitious charges e 'and e'': e '= e (ε ₂ -ε ₁ ) / (ε ₂ + ε ₁ ); e "= 2eε ₁ / (ε ₂ + ε ₁ ). (7 *)

Substituting (7 *) into the equations (1 *) - (2 *) results in the following formulas for the potentials φ ₁ and φ ₂ : φ ₁ = (4πε ₀ ) ^-1 e "/ ε ₁ r ₂ = (4πε ₀ ) ^-1 · (2e / r ₂ ) / (ε ₂ + ε ₁ ); z <0; (8th*) φ ₂ = (4πε ₀ ) ^-1 (e / ε ₂ r ₂ + e '/ ε ₂ r ₁ ) ≡ (4πε ₀ ) ^-1 (e / ε ₂ ) [r ₂ ^-1 + r ₁ ^-1 (ε ₂ - ε ₁ ) / (ε ₂ + ε ₁ )]; z ≥ 0; (9 *)

The positions of the straight lines AP and A'P are determined by the length of the horizontal vector OP = r _1.2 · sinθ and by the angle of rotation of this vector about the axis Oz. The limit position OP 'of this vector corresponds to the axis Ox and is characterized by the equation r ₁ y ⊥ 0 = - r ₂ y ⊥ 0

wobei, ähnlich der ersten Gleichung (4*), der formale Änderungssatz 1/r_i eingeführt wird: ∂/∂r₁(1/r2) = –∂/εr₁(1/r₁) ≡ 1/r₁ ²; ∂/∂r₂(1/r₁) = –∂/(1/r₂) ≡ 1/r₂ ² (12*) Normal components E _in the force vectors with respect to (4 *) are:

where, similar to the first equation (4 *), the formal change rate 1 / r _{i is} introduced: ∂ / ∂r ₁ (1 / r2) = -∂ / εr ₁ (1 / r ₁ ) ≡ 1 / r ₁ ² ; ∂ / ∂r ₂ (1 / r ₁ ) = -∂ / (1 / r ₂ ) ≡ 1 / r ₂ ² (12 *)

In the absence of free charges on the surface Π, the surface density η (P) of the bound charges at the point P of the surface Π with the jump of the normal component of the polarization vector P _i = -E _i ε ₀ (ε _i - 1); i = 1,2 ([1] §7 [2] §21) states: η (P) = - (n (P ₂ -P ₁ )) = (E _2n -E _1n ) ε ₀ (ε _i -1) ≡ ≡ ε ₀ [(ε _2-1 ) ∂φ ₂ | ∂r - (ε ₁ - 1) ∂φ ₁ / ∂r] _{z = 0} · cosθ. (13 *)

In the claim to EFG the following is accepted:
As medium 1 - steam H ₂ O; RDK: ε ₁ = 1;
as medium 2 - CaTiO ₃ ; ε ₂ ≡ ε >> 1,
this eliminates the second addend in the square brackets of equation (13) *.

Insert (11) * in (13) * results in:

η(P) = [e·cosθ/4πr₂ ²]·[(ε₂ – ε₁)/ε₂]·[2ε₁/(ε₂ + ε₁)] ≡ ≡ [e·c/2πr₂ ³]·[c²/(c²ε₂)]·[(ε₂ – ε₁)/(ε₂ + ε₁)] ≡ ≡ [e·cos³θ/(2πc²ε₂)]·[(ε₂ – ε₁)/(ε₂ + ε₁)] ≡ ≡ [e·cos³θ/(2πc²ε)]·[(ε – 1)/(ε + 1)] (15*) By simple transformations in equation (14 *), with respect to the last equation (4 *), we come to the final expression η (P), which is identical in the Gauss unit system ([2] §26) and in the SI system looks like:

η (P) = [e · cosθ / 4πr ₂ ² ] · [(ε ₂ -ε ₁ ) /ε ₂ ] · [2ε ₁ / (ε ₂ + ε ₁ )] ≡ ≡ [e · c / 2πr ₂ ³ ] · [C ² / (c ² ε ₂ )] · [(ε ₂ -ε ₁ ) / (ε ₂ + ε ₁ )] ≡ ≡ [e · cos ³ θ / (2πc ² ε ₂ )] · [( ε ₂ - ε ₁ ) / (ε ₂ + ε ₁ )] ≡ ≡ [e · cos ³ θ / (2πc ² ε)] · [(ε - 1) / (ε + 1)] (15 *)

literature

• - L.D. Landau, E.M. Lifschitz. Electrodynamics of the continuum. Fismatlite, Moscow, 2001.
• - J.P. Terletzki, J. P. Rybakov. Electrodynamics. Vyshaya shkola, Moscow, 1990.
• - A.I. Gusev, A.A. Rempel. Nanocrystalline substances. Fismatlite, Moscow, 2001.
• B.M. Javorski, A.A. Detlaff. Physics Handbook. Nayka, Moscow, 1968.
• - B.S. Gerschunski, A.V. Romanovskaya u. a. Manual Fundamentals of Electron Technology. Vyshka shkola. Kiev, 1974.
• A. A. Rovdel, A. M. Ponomareva. Manual physicochemical values. "Chemistry". Leningrad, 1983

LIST OF REFERENCE NUMBERS

I

diffuser

II

Flow Distribution

III

ring groove

IV

flow directing

V

flow system

VI

speed sensor

1

particle

2

polarizer

3

electrically conductive ring

4

Pen, needle

5

insulator

6

insulator

7

insulator

8th

insulator

9

insulator

P

particle

Q

particle

Π

level

Claims (22)

Arrangement for generating and / or forming an at least partially inhomogeneous electric field, comprising: a) at least one ground potential leading machine or plant part ( I ) as part of a housing for a preferably flowing medium; b) a source with at least one deviating from the ground potential, preferably positive electrical potential (V); c) a flat ring which is electrically connected to the ground potential, preferably positive electrical potential (V) of said source ( 3 ) of an electrically conductive metal, in particular of steel, each with an adjacent, ground potential leading machine or plant part ( I ) facing and facing away from the ring plane, a cross-sectional, parallel to the ring plane width (2b) and a diameter (2a + 2b); d) an ordered, single-layer system of particles (P, Q) of a metal or a metal alloy with a diameter (δ) of 1 mm or less: δ ≤ 1 mm, on the adjacent, ground potential leading machine or plant part ( I ) facing ring plane of the electrically conductive ring ( 3 ) for the purpose of increasing the strength of the electrostatic field; e) one the ring ( 3 ) at its one adjacent, ground potential leading machine or plant part ( I ) averted ring level comprehensive, dielectric socket ( 6 . 7 . 8th ) having a U-shaped cross-section whose cross-sectional area has a width ( 2 B ), and which via the neighboring, ground potential leading machine or plant part ( I ) facing the ring ( 3 ) protrudes at least by a height (δ); f) enter the space within the version ( 6 . 7 . 8th ) above the ring ( 3 ) filling powder of ceramic particles with a high dielectric constant (ε). Arrangement according to claim 1, characterized in that the ground potential leading machine or plant part is a flow channel, preferably with a widening from a flow inlet in the direction of a flow outlet cross-section, in particular a diffuser. Arrangement according to claim 2, characterized in that the electrically conductive ring ( 3 ) is in the area of the flow outlet. Arrangement according to claim 2 or 3, characterized in that the flow outlet is oriented approximately radially to the main flow direction in the region of the inlet, in particular is designed annular. Arrangement according to one of claims 2 to 4, characterized in that the cross section of the flow channel, in particular diffuser ( I ), widened conically from the flow inlet to the flow outlet. Arrangement according to claim 5, characterized in that the electrically conductive ring ( 3 ) is located on the imaginary extension of the conical surface of the conically expanding flow channel. Arrangement according to one of claims 2 to 6, characterized in that the electrically conductive ring ( 3 ) in a groove-shaped receptacle of a flow channel at least partially delimiting part ( II ) of the housing is included. Arrangement according to claim 7, characterized in that the part ( II ) the housing of the flow channel with a groove-shaped receptacle for the electrically conductive ring ( 3 ) is arched into the flow channel or diffuser at least partially, for example in the manner of a funnel, in particular a funnel with a curved into the flow channel in cross-section. Arrangement according to one of the preceding claims, characterized in that the electrically conductive ring ( 3 ) is made of a magnetic or magnetizable material and is magnetized. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) with a diameter (δ) of 1 mm or less on the adjacent, ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) consist of a transition metal or of an alloy with a transition metal, preferably as a main component of the alloy. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) with a diameter (δ) of 1 mm or less on the adjacent, ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) consist of a magnetic, preferably ferromagnetic metal or of an alloy with such a metal, preferably as the main component of the alloy. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) with a diameter (δ) of 1 mm or less on the adjacent, ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) consist of nickel or of an alloy with nickel, preferably as the main constituent of the alloy. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) with a diameter (δ) of 1 mm or less on the adjacent, ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) are coated with a hardened mass, preferably with a ceramic mass, in particular with a fired, ceramic mass. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) with a diameter (δ) of 1 mm or less on the adjacent, ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) are arranged on the annular surface at the intersection or vertices of a triangular lattice, preferably at the intersections or vertices of a lattice of equilateral triangles, in particular with an edge length or increment t = τδ, where τ = 1.01 ... 1.5, preferably τ = 1.02 ... 1.2, in particular τ = 1.05 ... 1.1. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) with a diameter (δ) of 1 mm or less on the adjacent, ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) are arranged in the region of the long-range order in a plurality of groups each having a plurality of, preferably n ₁ concentric circles with radius t, 2t,..., b -t, b and / or on a plurality, preferably n ₂ concentric circles with radius α-b ; α + b + t, ..., α + b, where preferably n ₁ = πα / b and / or n ₂ = 2b / t are "almost" integers. Arrangement according to one of the preceding claims, characterized in that the particles (P, Q) of a metal or a metal alloy on the adjacent ground potential leading machine or plant part ( I ) facing the electrically conductive ring ( 3 ) have a diameter (δ) of 100 μm or less: δ ≤ 100 μm; or a diameter (δ) of 10 μm or less: δ ≤ 10 μm; or a diameter (δ) of 1 μm or less: δ ≦ 1 μm; or a diameter (δ) of 100 nm or less: δ ≦ 100 nm. Arrangement according to one of the preceding claims, characterized in that the source of the electrical potential deviating from ground potential V comprises a DC voltage source. Arrangement according to one of the preceding claims, characterized in that a tunnel diode is arranged in the supply circuit between the source of the electrical potential V deviating from ground potential. Arrangement according to claim 18, characterized in that the tunnel diode between between at least one feed terminal of the electrically conductive ring ( 3 ) and ground potential is switched. Arrangement according to claim 18 or 19, characterized in that the tunnel diode between a voltage U ₁ and a voltage U ₂ > U _{1 has} a negative current-voltage characteristic, ie, a decreasing with increasing voltage current. Arrangement according to claim 20, characterized in that the upper voltage U ₂ > U ₁ , where the negative profile of the current-voltage characteristic ends, coincides with the output voltage from the DC voltage source. Arrangement according to one of the preceding claims, characterized in that the maximum strength E _{11 of} the electrostatic field on its axis and the charge q of the inductor with the basic parameters (V, a, b, c, δ, τ) by one or more , preferably all of the following relationships are related: E ₁₁ = √ 3 q / 18πε ₀ α ² ; q = 512Vπ ³ ε ₀ α ² δ ^-1 f (ε) g (τ) [1 - (1 + b ² / c ² ) ^-0.5 ] * cos ^-1 (1-b / α); f (ε) ≡ (ε-1) / (ε + 1); g (τ) ≡ [(3 + √ 3 ) / τ + 1] ^-1 ; α ≥ 50b ≥ 125c; where ε _{0 is} the electrical constant, ε >> 1 is the relative dielectric coefficient of the capacitor ceramic.

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