DE102013106397B4 - Pass substrate treatment plant - Google Patents

Pass substrate treatment plant Download PDF

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DE102013106397B4
DE102013106397B4 DE102013106397.7A DE102013106397A DE102013106397B4 DE 102013106397 B4 DE102013106397 B4 DE 102013106397B4 DE 102013106397 A DE102013106397 A DE 102013106397A DE 102013106397 B4 DE102013106397 B4 DE 102013106397B4
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Prior art keywords
substrate
gas flow
substrate transport
transport direction
flow openings
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DE102013106397A1 (en
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Michael Hofmann
Torsten Dsaak
Steffen Mosshammer
Thomas Meyer
Matthias Smolke
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Von Ardenne Asset GmbH and Co KG
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Von Ardenne GmbH
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Durchlauf-Substratbehandlungsanlage mit einer horizontalen Substrattransportebene zum Transport plattenförmiger Substrate in einer Substrattransportrichtung (3) innerhalb eines von horizontalen Wandelementen (1) begrenzten Transporttunnels, wobei mindestens ein horizontales Wandelement (1) über die gesamte Breite der Substrattransportebene eine Gasströmung durch zwei oder mehr Gasströmungsöffnungen (2) ermöglicht, die so angeordnet sind, dass die in der Substrattransportrichtung (3) gemessene Gesamtbreite der Gasströmungsöffnungen (2) für jede in der Substrattransportrichtung (3) verlaufend gedachte Bahnlinie des Substrats gleich groß ist.A continuous substrate treatment plant having a horizontal substrate transport plane for transporting plate-shaped substrates in a substrate transport direction (3) within a transport tunnel bounded by horizontal wall elements (1), wherein at least one horizontal wall element (1) over the entire width of the substrate transport plane a gas flow through two or more gas flow openings (3). 2) which are arranged such that the total width of the gas flow openings (2) measured in the substrate transport direction (3) is the same for each substrate web line in the substrate transport direction (3).

Description

Die Erfindung betrifft Verbesserungen an einer horizontalen Durchlauf-Substratbehandlungsanlage zur Behandlung, beispielsweise Beschichtung, plattenförmiger Substrate, beispielsweise Glasplatten, wobei die Substrate mit oder ohne Substrathalter auf einer Transporteinrichtung liegend, d.h. in horizontaler Ausrichtung, durch eine von Kammerwänden begrenzte Anlagenkammer oder eine Anordnung mehrerer hintereinander angeordneter Anlagenkammern einer Substratbehandlungsanlage hindurch transportiert werden, wobei die Substrate der Einwirkung mindestens einer Substratbehandlungseinrichtung, wie beispielsweise Beschichtungseinrichtungen, Ätzeinrichtungen usw. ausgesetzt werden. Die Substratbehandlung findet einerseits oft unter einem gegenüber dem Atmosphärendruck geringeren Druck (Prozessvakuum) und andererseits auch oft in einem gewählten, oftmals gesteuert eingelassenen Gas oder Gasgemisch statt (Prozessatmosphäre). The invention relates to improvements in a horizontal continuous substrate treatment plant for the treatment, for example coating, of plate-shaped substrates, for example glass plates, the substrates, with or without a substrate holder lying on a transport device, i. in a horizontal orientation, through a chamber chamber bounded by chamber walls or an arrangement of a plurality of successively arranged plant chambers of a substrate treatment plant, the substrates being exposed to at least one substrate treatment device, such as coating devices, etching devices, etc. On the one hand, the substrate treatment often takes place at a lower pressure (process vacuum) than at atmospheric pressure and, on the other hand, often occurs in a selected, often controlled gas or gas mixture (process atmosphere).

Bei Durchlauf-Substratbehandlungsanlagen sind, im Gegensatz zu sogenannten Batch-Substratbehandlungsanlagen der Anlagenkammer oder einer Anordnung mehrerer hintereinander angeordneter Anlagenkammern, die beispielsweise als Prozesskammern, Pumpkammern, Transferkammern usw. ausgebildet sein können, im Allgemeinen mindestens je eine als Schleusenkammer ausgebildete Anlagenkammer vor- und nachgelagert, und eine Transporteinrichtung ist im Innern der Substratbehandlungsanlage so angeordnet, dass sie sich durch die beiden Schleusenkammern sowie alle anderen, dazwischen angeordneten Anlagenkammern erstreckt. In continuous substrate treatment plants, in contrast to so-called batch substrate treatment plants of the plant chamber or an arrangement of several successively arranged plant chambers, which may be formed, for example, as process chambers, pumping chambers, transfer chambers, etc., generally at least one each formed as a lock chamber plant chamber upstream and downstream and a transport device is arranged in the interior of the substrate treatment plant so that it extends through the two lock chambers and all other system chambers arranged therebetween.

Dadurch können Substrate in einer Transportrichtung durch die Substratbehandlungsanlage bewegt werden, indem sie mittels einer ersten Schleusenkammer in die Substratbehandlungsanlage eingeschleust, mittels der Transporteinrichtung durch die gesamte Anordnung hintereinander angeordneter Anlagenkammern hindurch transportiert und mittels einer zweiten Schleusenkammer aus der Substratbehandlungsanlage ausgeschleust werden. Dabei werden die Substrate in mindestens einer Prozesskammer auch an einer darin angeordneten Substratbehandlungseinrichtung vorbei bewegt und dabei der gewünschten Substratbehandlung ausgesetzt. As a result, substrates can be moved in a transport direction through the substrate treatment plant by being introduced into the substrate treatment plant by means of a first lock chamber, transported through the entire arrangement of successively arranged plant chambers by means of the transport device and discharged from the substrate treatment plant by means of a second lock chamber. In this case, the substrates in at least one process chamber are also moved past a substrate treatment device arranged therein and are exposed to the desired substrate treatment.

Für die Behandlung plattenförmiger Substrate haben sich Transporteinrichtungen bewährt, die eine Mehrzahl von quer zur Transportrichtung der Substrate angeordneten, drehbar gelagerten, zylindrischen Transportwalzen umfassen, deren oberste Mantellinien eine horizontale Transportebene für die Substrate definieren und von denen mindestens eine Transportwalze antreibbar ist. Findet die gewünschte Substratbehandlung unter erhöhten Prozesstemperaturen, beispielsweise 400, 600 oder 800 °C, statt, hat es sich bewährt, die Transportwalzen aus hitzebeständigen Werkstoffen, beispielsweise Keramik, herzustellen oder mit einem hitzebeständigen Werkstoff zu überziehen. For the treatment of plate-shaped substrates, transport devices have been proven which comprise a plurality of transversely mounted to the transport direction of the substrates, rotatably mounted, cylindrical transport rollers whose uppermost generatrices define a horizontal transport plane for the substrates and of which at least one transport roller is driven. If the desired substrate treatment takes place at elevated process temperatures, for example 400, 600 or 800 ° C., it has proven useful to produce the transport rollers from heat-resistant materials, for example ceramics, or to coat them with a heat-resistant material.

WO 2012/124512 A1 befasst sich mit der Ausgestaltung einer Beschichtungseinrichtung, die aus einer Dampfquelle, einer Blende und einer Maske gebildet ist. Auf plattenförmigen Substraten sollen zur Herstellung großflächiger Displays mit hoher Auflösung sehr kleine Strukturen mit scharf begrenzten Konturen abgeschieden werden, was gleichzeitig erfordert, dass in den übrigen Bereichen der Substratoberfläche gerade kein Material abgeschieden wird. Dazu wird über den Dampfauslassöffnungen einer Dampfquelle eine Blende angeordnet, die Blendenöffnungen aufweist, welche nur Dampfteilchen durchlassen, deren Bewegungsrichtungen einen bestimmten Maximalwinkel zur Substratnormalen nicht überschreiten. In einer Ausgestaltung sind die Blendenöffnungen dreieckig. Über dieser Blende wird eine Maske angeordnet, die für jede einzelne herzustellende Teilstruktur eine Maskenöffnung aufweist. WO 2012/124512 A1 deals with the design of a coating device, which is formed from a vapor source, a diaphragm and a mask. On plate-shaped substrates to produce large-scale displays with high resolution very small structures are deposited with sharply defined contours, which simultaneously requires that in the other areas of the substrate surface just no material is deposited. For this purpose, a diaphragm is arranged above the vapor outlet openings of a vapor source and has aperture openings which only allow vapor particles whose directions of movement do not exceed a specific maximum angle to the substrate normal. In one embodiment, the apertures are triangular. Over this aperture, a mask is arranged, which has a mask opening for each individual partial structure to be produced.

Die Erfindung betrifft eine Durchlauf-Substratbehandlungsanlage mit einer horizontalen Substrattransportebene zum Transport plattenförmiger Substrate in einer Substrattransportrichtung innerhalb eines von horizontalen Wandelementen begrenzten Transporttunnels. The invention relates to a continuous substrate treatment system having a horizontal substrate transport plane for transporting plate-shaped substrates in a substrate transport direction within a transport tunnel bounded by horizontal wall elements.

Hierfür werden auch horizontale Wandelemente benötigt, die über die gesamte Breite der Substrattransportebene eine gleichmäßige Gasströmung, beispielsweise für einen Pumpdurchgriff oder zur Einleitung von Prozessgasen, ermöglichen. Eine Möglichkeit besteht darin, in dem horizontalen Wandelement eine quer zur Substratebene verlaufende schlitzförmige Gasströmungsöffnung konstanter Breite vorzusehen. Es hat sich jedoch gezeigt, dass ein derartiges Wandelement nicht die nötige Festigkeit aufweist. Wenn jedoch die schlitzförmige Gasströmungsöffnung durch in der Substrattransportrichtung verlaufende Stege unterbrochen und so in mehrere Gasströmungsöffnungen unterteilt wird, um die mechanische Stabilität des Wandelements zu erhöhen, so stellt man an diesen Stellen abweichende Schichtqualitäten auf dem Substrat fest. For this purpose, horizontal wall elements are required, which allow over the entire width of the substrate transport plane a uniform gas flow, for example, for a pump penetration or for the introduction of process gases. One possibility is to provide a slot-shaped gas flow opening of constant width extending transversely to the substrate plane in the horizontal wall element. However, it has been shown that such a wall element does not have the necessary strength. However, if the slit-shaped gas flow opening is interrupted by webs extending in the substrate transporting direction and thus subdivided into a plurality of gas flow openings in order to increase the mechanical stability of the wall element, different layer qualities are determined on the substrate at these locations.

Eine Aufgabe der Erfindung besteht daher darin, eine Durchlauf-Substratbehandlungsanlage mit einem horizontalen Wandelement zur Begrenzung des Transporttunnels anzugeben, das einen gleichmäßigen Gasfluss und eine homogene Einwirkung von Wärmestrahlung auf das Substrat über die gesamte Substratbreite ermöglicht und gleichzeitig mechanisch ausreichend stabil ist. An object of the invention is to provide a continuous substrate treatment plant with a horizontal wall element for limiting the transport tunnel, which allows a uniform gas flow and a homogeneous action of heat radiation to the substrate over the entire width of the substrate and at the same time is sufficiently stable mechanically.

Diese Aufgabe wird gelöst durch eine Durchlauf-Substratbehandlungsanlage mit den Merkmalen des Anspruchs 1. Ausgestaltungen und Weiterbildungen sind Gegenstand der abhängigen Ansprüche. This object is achieved by a continuous substrate treatment system having the features of claim 1. Embodiments and further developments are the subject of the dependent claims.

Vorgeschlagen wird eine Durchlauf-Substratbehandlungsanlage mit einer horizontalen Substrattransportebene zum Transport plattenförmiger Substrate in einer Substrattransportrichtung innerhalb eines von horizontalen Wandelementen begrenzten Transporttunnels, wobei mindestens ein horizontales Wandelement über die gesamte Breite der Substrattransportebene eine Gasströmung durch zwei oder mehr Gasströmungsöffnungen ermöglicht, die so angeordnet sind, dass die in der Substrattransportrichtung gemessene Gesamtbreite der Gasströmungsöffnungen an jedem Punkt gleich groß ist. Proposed is a continuous substrate processing system having a horizontal substrate transport plane for transporting plate-shaped substrates in a substrate transport direction within a transport tunnel bounded by horizontal wall elements, at least one horizontal wall element over the entire width of the substrate transport plane permitting gas flow through two or more gas flow openings arranged in that the total width of the gas flow openings measured in the substrate transport direction is the same at each point.

Durch diese Lösung wird sichergestellt, dass der Gasfluss über die gesamte Breite des in horizontaler Lage transportierten Substrats absolut gleichmäßig ist, so dass höchste Schichtqualitäten erreicht werden können. Gleichzeitig weist das horizontale Wandelement eine stark erhöhte mechanische Festigkeit auf, weil mehrere relativ kleine Gasströmungsöffnungen verwendet werden können. This solution ensures that the gas flow over the entire width of the substrate transported in a horizontal position is absolutely uniform, so that highest layer qualities can be achieved. At the same time, the horizontal wall element has a greatly increased mechanical strength because a plurality of relatively small gas flow openings can be used.

In einer Ausgestaltung ist vorgesehen, dass die Gasströmungsöffnungen trapezförmig sind. In one embodiment, it is provided that the gas flow openings are trapezoidal.

Gemäß einer Weiterbildung ist vorgesehen, dass benachbarte Gasströmungsöffnungen in der Substrattransportrichtung gesehen relativ zueinander versetzt sind und einander quer zur Substrattransportrichtung überlappen. According to a further development, it is provided that adjacent gas flow openings, viewed in the substrate transport direction, are offset relative to one another and overlap one another transversely to the substrate transport direction.

Nachfolgend wird die Erfindung anhand eines Ausführungsbeispiels und zugehöriger Zeichnungen näher erläutert. Dabei zeigt The invention will be explained in more detail with reference to an embodiment and associated drawings. It shows

1 ein Ausführungsbeispiel eines horizontalen Wandelements. 1 an embodiment of a horizontal wall element.

Das horizontale Wandelement 1, das im Ausführungsbeispiel aus Glaskeramik gefertigt ist, ist rechteckig, plattenförmig und weist zwei Anordnungen von Gasströmungsöffnungen 2 auf, die sich jeweils quer zur Substrattransportrichtung 3 erstrecken. The horizontal wall element 1 , which is made of glass ceramic in the embodiment is rectangular, plate-shaped and has two arrangements of gas flow openings 2 on, each transverse to the substrate transport direction 3 extend.

Jede der Gasströmungsöffnungen 2 ist trapezförmig gestaltet und die quer zur Substrattransportrichtung 3 gesehen aufeinanderfolgenden Gasströmungsöffnungen 2 sind in der Substrattransportrichtung 3 gesehen abwechselnd hin und her versetzt und zueinander gespiegelt. Gleichzeitig überlappen sich benachbarte Gasströmungsöffnungen 2 quer zur Substrattransportrichtung 3 gesehen teilweise. Dadurch ist zwischen je zwei benachbarten Gasströmungsöffnungen 2 jeweils ein Steg 4 vorhanden, der für eine höhere Festigkeit des horizontalen Wandelements 1 sorgt. Each of the gas flow openings 2 is trapezoidal shaped and transverse to the substrate transport direction 3 seen consecutive gas flow openings 2 are in the substrate transport direction 3 seen alternately offset back and forth and mirrored to each other. At the same time, adjacent gas flow openings overlap 2 transverse to the substrate transport direction 3 partially seen. This is between every two adjacent gas flow openings 2 one footbridge each 4 present, for a higher strength of the horizontal wall element 1 provides.

Dennoch haben die Stege 4 aufgrund der speziellen Anordnung keinen negativen Einfluss auf die Schichtqualität des unter dem horizontalen Wandelement 1 vorbei bewegten und beschichteten Substrats. Der Grund dafür ist, dass die in der Substrattransportrichtung 3 gemessene Gesamtbreite, d.h. die summarische Breite der Gasströmungsöffnung 2 oder Gasströmungsöffnungen 2 für jede in der Substrattransportrichtung 3 verlaufend gedachte, zur Substrattransportrichtung 3 parallele Bahnlinie des Substrats, d.h. über die gesamte Breite der Substrattransportebene, gleich groß ist. Diese Breite entspricht im mittleren Bereich jeder Gasströmungsöffnung 2 der Höhe des Trapezes. Im Bereich der Überlappung zweier Gasströmungsöffnungen 2 addieren sich die Höhen beider Trapeze jedoch aufgrund der speziellen Gestaltung stets zu demselben Betrag, so dass der Gasvolumenstrom über die gesamte Substratbreite konstant ist. Nevertheless, the webs have 4 due to the special arrangement no negative influence on the layer quality of the under the horizontal wall element 1 past moving and coated substrate. The reason is that in the substrate transport direction 3 measured total width, ie the total width of the gas flow opening 2 or gas flow openings 2 for each in the substrate transport direction 3 running imaginary, to the substrate transport direction 3 parallel track line of the substrate, that is the same across the entire width of the substrate transport plane. This width corresponds to the middle region of each gas flow opening 2 the height of the trapezoid. In the area of the overlap of two gas flow openings 2 However, due to the special design, the heights of both trapezoids always add up to the same amount, so that the gas volume flow is constant over the entire width of the substrate.

BezugszeichenlisteLIST OF REFERENCE NUMBERS

1 1
horizontales Wandelement horizontal wall element
2 2
Gasströmungsöffnung Gas flow opening
3 3
Substrattransportrichtung Substrate transport direction
4 4
Steg web

Claims (4)

Durchlauf-Substratbehandlungsanlage mit einer horizontalen Substrattransportebene zum Transport plattenförmiger Substrate in einer Substrattransportrichtung (3) innerhalb eines von horizontalen Wandelementen (1) begrenzten Transporttunnels, wobei mindestens ein horizontales Wandelement (1) über die gesamte Breite der Substrattransportebene eine Gasströmung durch zwei oder mehr Gasströmungsöffnungen (2) ermöglicht, die so angeordnet sind, dass die in der Substrattransportrichtung (3) gemessene Gesamtbreite der Gasströmungsöffnungen (2) für jede in der Substrattransportrichtung (3) verlaufend gedachte Bahnlinie des Substrats gleich groß ist. Continuous substrate treatment system with a horizontal substrate transport plane for transporting plate-shaped substrates in a substrate transport direction (US Pat. 3 ) within one of horizontal wall elements ( 1 ) limited transport tunnels, wherein at least one horizontal wall element ( 1 ) over the entire width of the substrate transport plane a gas flow through two or more gas flow openings ( 2 ), which are arranged so that in the substrate transport direction ( 3 ) measured total width of the gas flow openings ( 2 ) for each in the substrate transport direction ( 3 ) running imaginary railway line of the substrate is the same size. Durchlauf-Substratbehandlungsanlage nach Anspruch 1, dadurch gekennzeichnet, dass die Gasströmungsöffnungen (2) trapezförmig sind. Continuous substrate treatment plant according to claim 1, characterized in that the gas flow openings ( 2 ) are trapezoidal. Durchlauf-Substratbehandlungsanlage nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass benachbarte Gasströmungsöffnungen (2) in der Substrattransportrichtung (3) gesehen relativ zueinander versetzt sind und einander quer zur Substrattransportrichtung (3) überlappen. Continuous substrate treatment plant according to claim 1 or 2, characterized in that adjacent gas flow openings ( 2 ) in the substrate transport direction ( 3 ) are offset relative to each other and transversely to the Substrattransportrichtung ( 3 ) overlap. Durchlauf-Substratbehandlungsanlage nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das horizontale Wandelement (1) aus Glaskeramik gefertigt ist. Continuous substrate treatment plant according to one of the preceding claims, characterized characterized in that the horizontal wall element ( 1 ) is made of glass ceramic.
DE102013106397.7A 2013-06-19 2013-06-19 Pass substrate treatment plant Expired - Fee Related DE102013106397B4 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012124512A1 (en) * 2011-03-11 2012-09-20 シャープ株式会社 Vapor deposition apparatus, vapor deposition method, and organic el display

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012124512A1 (en) * 2011-03-11 2012-09-20 シャープ株式会社 Vapor deposition apparatus, vapor deposition method, and organic el display
US20130337597A1 (en) * 2011-03-11 2013-12-19 Sharp Kabushiki Kaisha Vapor deposition device, vapor deposition method, and organic el display device

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