DE102013105400B4 - Method of forming a bump structure - Google Patents
Method of forming a bump structure Download PDFInfo
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- DE102013105400B4 DE102013105400B4 DE102013105400.5A DE102013105400A DE102013105400B4 DE 102013105400 B4 DE102013105400 B4 DE 102013105400B4 DE 102013105400 A DE102013105400 A DE 102013105400A DE 102013105400 B4 DE102013105400 B4 DE 102013105400B4
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Abstract
Verfahren zum Ausbilden einer Bump-Struktur, umfassend: Ausbilden einer Under-Bump-Metallurgy(UBM)-Struktur (14) auf einem Substrat (12); Ausbilden eines Kupfer-Pillars (16) auf der UBM-Struktur (14), wobei der Kupfer-Pillar (16) so gestaltet ist, dass er ein sich verjüngendes bogenförmiges Profil (22) aufweist, wobei die Seitenwände des Kupfer-Pillars (16) entlang der gesamten Länge des Kupfer-Pillars konkav sind; Ausbilden einer Metallkappe (18) auf dem Kupfer-Pillar (16); und Ausbilden einer Lotstruktur (20) auf der Metallkappe (18); wobei die Unterseite (24) des Kupfer-Pillars (16), die der UBM-Struktur (14) zugewandt ist, breiter ist als seine Oberseite (26), die der Metallkappe (18) zugewandt ist; und die Metallkappe breiter ist als die Oberseite des Kupfer-Pillars, wo der Kupfer-Pillar (16) an die Metallkappe (18) angrenzt; wobei das Ausbilden des Kupfer-Pillars, der Metallkappe und der Lotstruktur ferner umfasst: Aufbringen eines Fotoresists auf der UBM-Struktur und dem Substrat, Erzeugen einer Ladder-Bump-Profilöffnung in dem Fotoresist durch einen Fotolithographieprozess; Bilden des Kupfer-Pillars und der Metallkappe in der Öffnung in dem Fotoresist; Bilden der Lotstruktur auf der Metallkappe; Entfernen des Fotoresists und Ätzen der UBM-Struktur, wobei das Ätzen der UBM-Struktur auch einen Überhang der Metallkappe an der Oberseite des Kupfer-Pillars erzeugt; das Verfahren ferner umfassend: Ausbilden eines Kupferoxid-Films auf den Seitenwänden des Kupfer-Pillars (16); Montieren der Lotstruktur an einem zweiten Substrat (60) und Einbringen einer Unterfüllung (64) zwischen dem Substrat (12) der Bump-Struktur und dem zweiten Substrat (60), wobei der Kupferoxidfilm an der Unterfüllung (64) haftet.A method of forming a bump structure, comprising: forming an under bump metallurgy (UBM) structure (14) on a substrate (12); Forming a copper pillar (16) on the UBM structure (14), wherein the copper pillar (16) is shaped to have a tapered arcuate profile (22), the sidewalls of the copper pillar (16 ) are concave along the entire length of the copper pillar; Forming a metal cap (18) on the copper pillar (16); and forming a solder structure (20) on the metal cap (18); the underside (24) of the copper pillar (16) facing the UBM structure (14) being wider than its top surface (26) facing the metal cap (18); and the metal cap is wider than the top of the copper pillar, where the copper pillar (16) abuts the metal cap (18); wherein forming the copper pillar, the metal cap, and the solder structure further comprises: applying a photoresist to the UBM structure and the substrate, creating a ladder bump profile opening in the photoresist through a photolithography process; Forming the copper pillar and the metal cap in the opening in the photoresist; Forming the solder structure on the metal cap; Removing the photoresist and etching the UBM structure, wherein the etching of the UBM structure also creates an overhang of the metal cap at the top of the copper pillar; the method further comprising: forming a copper oxide film on the sidewalls of the copper pillar (16); Mounting the solder pattern to a second substrate (60) and inserting a underfill (64) between the substrate (12) of the bump structure and the second substrate (60), wherein the copper oxide film adheres to the underfill (64).
Description
Hintergrundbackground
Bei einem typischen Copper (Cu) Pillar Bump-Prozess weist Lot mit oder ohne Nickel (Ni) darunter immer eine größere kritische Dimension (critical dimension) (CD)) als die Unterseite des Cu-Pillars aufgrund von Cu-Überätzung auf. Dieses Bump-Profil mit großer Oberseite und kleiner Unterseite ist für Fine-Pitch-Montageausbeute, speziell bei Bump-On-Trace(BOT)-Montage, kritisch. Da eine obere Under Bump Metallurgy (UBM) näher an einer benachbarten gemeinsamen Cu-Bahn ist, besteht ein höheres Risiko, dass der Lotteil unerwünschterweise eine Bump to trace-Brücke verursachen wird.In a typical Copper (Cu) Pillar Bump process, solder with or without nickel (Ni) below always has a larger critical dimension (CD) than the bottom of the Cu pillar due to Cu overetching. This bump profile with large top and small bottom is critical for fine-pitch mounting yield, especially in bump-on-trace (BOT) assembly. Since an upper Under Bump Metallurgy (UBM) is closer to an adjacent common Cu track, there is a greater risk that the Lot part will undesirably cause a bump to trace bridge.
Zudem weist ein herkömmlicher Bump-Prozess eine Inversionszinn ((inversion tin)(IT))-Schicht entlang der Cu-Pillar-Seitenwand auf. Dieses Inversionszinn kann unerwünschterweise das Risiko einer Ablösung aufgrund von geringer Haftung an oder auf einem Verbundmaterial (d. h. einem Unterfüllmaterial) erhöhen.In addition, a conventional bumping process has an inversion tin (IT) layer along the Cu-pillar sidewall. This inversion tin may undesirably increase the risk of delamination due to poor adhesion to or on a composite material (i.e., underfill material).
Die Erfindung sieht ein Verfahren nach Anspruch I vor. Ausgestaltungen sind in den Unteransprüchen angegeben.The invention provides a method according to claim I before. Embodiments are specified in the subclaims.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Für ein umfassenderes Verständnis der vorliegenden Offenbarung und der Vorteile derselben wird nun auf die folgenden Beschreibungen in Verbindung mit den beigefügten Zeichnungen Bezug genommen werden, in denen:For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
Korrespondierende Zahlen und Symbole in den verschiedenen Figuren beziehen sich allgemein auf korrespondierende Teile, sofern nichts anderes angegeben wird. Die Figuren sind gezeichnet, um die relevanten Aspekte der Ausführungsformen eindeutig darzustellen, und sind nicht notwendigerweise maßstabsgerecht gezeichnet.Corresponding numbers and symbols in the various figures generally refer to corresponding parts unless otherwise specified. The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.
Ausführliche Beschreibung von beispielhaften AusführungsformenDetailed description of exemplary embodiments
Die Herstellung und Verwendung der gegenwärtig bevorzugten Ausführungsformen werden unten im Detail dargelegt. Es versteht sich jedoch, dass die vorliegende Offenbarung viele anwendbare erfinderische Konzepte liefert, die in einer großen Vielzahl von speziellen Kontexten verkörpert sein können. Die erörterten speziellen Ausführungsformen dienen lediglich der Erläuterung und beschränken nicht den Umfang der Offenbarung.The preparation and use of the presently preferred embodiments are set forth in detail below. It should be understood, however, that the present disclosure provides many applicable inventive concepts that may be embodied in a wide variety of specific contexts. The specific embodiments discussed are for illustration only and do not limit the scope of the disclosure.
Die vorliegende Erfindung wird unter Bezugnahme auf bevorzugte Ausführungsformen in einem speziellen Kontext, nämlich Ladder-Bump-Struktur für eine Bump-On-Trace(BOT)-Montage, beschrieben. Die Konzepte der Offenbarung können jedoch auch für andere Halbleiterstrukturen oder -schaltungen gelten.The present invention will be described with reference to preferred embodiments in a specific context, ladder-bump structure for bump-on-trace (BOT) assembly. However, the concepts of the disclosure may also apply to other semiconductor structures or circuits.
In
Weiterhin auf die
Unverändert auf die
Bei einer Ausführungsform erzeugt oder induziert der Prozess des Ätzens der UBM-Struktur
Weiterhin auf die
Nunmehr auf die
Nunmehr auf die
Anhand des Vorangehenden sollte verständlich sein, dass die Ausführungsformen der Bump-Ladder-Strukturen
Der hierin beschriebene innovative Bump-Prozess lässt eine herkömmliche Inversionszinn (inversion Tin(IT))-Schicht um den Cu-Pillar aus und die Bump-Oberfläche weist etwas CuO auf der Cu-Seitenwand auf, das für eine höhere Haftung an oder auf dem Verbundmaterial oder Unterfüllungsmaterial sorgt.The innovative bumping process described herein omits a conventional inversion tin (IT) layer around the copper pillar and the bump surface has some CuO on the Cu sidewall which is responsible for higher adhesion to or on top of the Cu Composite or underfill material provides.
Vorteile einiger beschriebener Ausführungsformen umfassen, dass das Lot mit Ni (oder ein anderes Metall) eine größere Dimension als eine Oberseite des Cu-Pillars aufweist. Ein beispielhafter UBM-Ätzprozess induziert Ni-Überhang und Cu-Pillar-Einschnürung. Der Ni-Überhang sorgt für eine größere Kontaktfläche und weist eine stärkere Haftung an oder auf einem Verbundmaterial, wie zum Beispiel einer Unterfüllung oder Verbundmaterial (Formmasse), auf. Die beispielhafte Ladder-Bump-Struktur weist eine breitere untere als obere Dimension von Ni auf und das Cu-Pillar-Einschnürprofil kann Extremely Low-k Dielectric (ELK), Passivierung, UBM und Polyimid(PI)-Stress bzw. -Beanspruchung reduzieren. Außerdem sorgen die dargestellten Ausführungsformen für eine größere Kontaktfläche für eine Verbesserung der Cu-Pillar/Verbundmaterial-Haftung. Ein weiterer Vorteil kann sein, dass der Cu-Pillar keine herkömmliche Inversionszinn (inversion Tin(IT))-Beschichtung aufweist und stattdessen Kupferoxid (CuO) an den Seitenwänden verwendet, um die Beständigkeit bei Zuverlässigkeitstests zu verbessern.Advantages of some embodiments described include that the solder with Ni (or other metal) has a larger dimension than a top of the Cu pillar. An exemplary UBM etch process induces Ni overhang and Cu-pillar constriction. The Ni overhang provides for a larger contact area and has stronger adhesion to or on a composite material, such as underfill or composite material (molding compound). The exemplary ladder-bump structure has a wider lower than upper dimension of Ni and the Cu-pillar crimp profile can reduce Extremely Low-k Dielectric (ELK), passivation, UBM, and polyimide (PI) stress. In addition, the illustrated embodiments provide a larger contact area for copper pillar / composite adhesion enhancement. Another advantage may be that the Cu pillar does not have a conventional inversion tin (IT) coating and instead uses copper oxide (CuO) on the sidewalls to improve reliability testing reliability.
Die folgenden Druckschriften beziehen sich auf Verfahren zum Herstellen von Bump-Strukturen:
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US201261707609P | 2012-09-28 | 2012-09-28 | |
US201261707644P | 2012-09-28 | 2012-09-28 | |
US201261707442P | 2012-09-28 | 2012-09-28 | |
US61/707,442 | 2012-09-28 | ||
US61/707,644 | 2012-09-28 | ||
US61/707,609 | 2012-09-28 | ||
US13/734,811 US10008459B2 (en) | 2012-09-18 | 2013-01-04 | Structures having a tapering curved profile and methods of making same |
US13/734,811 | 2013-01-04 |
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