DE102013006363A1 - Sensor technology for the differentiation of thin-film solar modules - Google Patents
Sensor technology for the differentiation of thin-film solar modules Download PDFInfo
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- DE102013006363A1 DE102013006363A1 DE201310006363 DE102013006363A DE102013006363A1 DE 102013006363 A1 DE102013006363 A1 DE 102013006363A1 DE 201310006363 DE201310006363 DE 201310006363 DE 102013006363 A DE102013006363 A DE 102013006363A DE 102013006363 A1 DE102013006363 A1 DE 102013006363A1
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- solar modules
- thin
- radiation
- modules
- film solar
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- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 230000004069 differentiation Effects 0.000 title claims 2
- 230000005855 radiation Effects 0.000 claims abstract description 14
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract 5
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 238000005259 measurement Methods 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- 238000004064 recycling Methods 0.000 abstract description 6
- 229910052793 cadmium Inorganic materials 0.000 abstract description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 230000002745 absorbent Effects 0.000 abstract 1
- 239000002250 absorbent Substances 0.000 abstract 1
- 229910004613 CdTe Inorganic materials 0.000 description 4
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/171—Systems in which incident light is modified in accordance with the properties of the material investigated with calorimetric detection, e.g. with thermal lens detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/171—Systems in which incident light is modified in accordance with the properties of the material investigated with calorimetric detection, e.g. with thermal lens detection
- G01N2021/1714—Photothermal radiometry with measurement of emission
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
Abstract
Dünnfilm-Solarmodule mit Schichten üblicherweise bestehend aus amorphem Silizium (a-Si:H) oder Cadmium-Tellurid (CdTe) sind optisch nicht unterscheidbar. Im Unterschied zu Modulen mit a-Si:H benötigen die zum Recycling anfallenden Module mit CdTe wegen der zwangsläufig anfallenden Cadmium-Stäube bei der Zerkleinerung staubdicht abgeschlossene und damit kostenintensive Verarbeitungsräume. Die erfindungsgemäße Sensorik unterscheidet die Materialien über die unterschiedliche Absorption der eingestrahlten Strahlung, wobei die durch die unterschiedliche Absorption erreichte Aufheizung gemessen wird. Die Sensorik besteht aus einer gerichteten Einstrahlung in einem Wellenlängenbereich, in dem die a-Si:H-Schichten unter der Frontglasabdeckung schon transparent sind, die CdTe-Schichten unter der Frontglasabdeckung aber noch diese Einstrahlung absorbieren. Bei ausreichender Energiedichte heizt sich die absorbierende Schicht schnell auf. Die unterschiedliche Aufheizung kann über ein berührungsloses Strahlungsthermometer gemessen werden. Die Sensorik ermöglicht beim Recyceln von Solarmodulen das Aussortieren der in die Zerkleinerungsstrecke einlaufenden CdTe-haltigen Solar-Module, sodass die gleich aussehenden a-S:H-haltigen Solar-Module mit den üblichen Standardverfahren weiterbearbeitet werden können.Thin-film solar modules with layers usually consisting of amorphous silicon (a-Si: H) or cadmium telluride (CdTe) are visually indistinguishable. In contrast to modules with a-Si: H, the modules with CdTe for recycling require, due to the inevitably accumulating cadmium dusts, dust-tight and therefore cost-intensive processing rooms. The sensor system according to the invention differentiates between the materials by means of the different absorption of the irradiated radiation, the heating achieved by the different absorption being measured. The sensor system consists of directed radiation in a wavelength range in which the a-Si: H layers under the front glass cover are already transparent, but the CdTe layers under the front glass cover still absorb this radiation. If the energy density is sufficient, the absorbent layer heats up quickly. The different levels of heating can be measured using a non-contact radiation thermometer. When recycling solar modules, the sensor technology enables the CdTe-containing solar modules entering the shredding line to be sorted out, so that the a-S: H-containing solar modules that look the same can be processed using the usual standard processes.
Description
Die zur Zeit zum Recycling zurücklaufenden Photovoltaikmodule, laut PVCycle europaweit mehr als 5.000 Tonnen in 2012 mit stark steigender Tendenz in den nächsten Jahren, können zum größeren Teil optisch als aus Silizium-Wafern aufgebaut eingeordnet werden. Diese können dann problemlos in den Recyclingprozess einlaufen, der anfangs aus dem Schreddern und dem nachfolgenden Mahlen (Hammermühle, Prallmühle u. ä.) der geschredderten Stücke aus Doppelglas-Glas oder Frontglas-Rückseitenfolie besteht.According to PVCycle, the photovoltaic modules that currently recycle for recycling in Europe over 5,000 tonnes in 2012, with a strong upward trend over the next few years, can be classified optically as being made up of silicon wafers. These can then run smoothly into the recycling process, which initially consists of shredding and subsequent grinding (hammer mill, impact mill, etc.) of the shredded pieces of double-glass glass or front glass back sheet.
Zum geringeren Teil bestehen die aktiven Schichten der zum Recyceln anstehenden Module hauptsächlich aus großflächig abgeschiedenem amorphem Silizium a-Si:H oder Cadmiumtellurid CdTe, beide sind schwarz und ohne Kennzeichnung des Herstellers lässt sich nicht feststellen, welches der beiden Materialen vorliegt. Funkenerosion, EDX-Analytik und ähnliche direkt die Schicht angreifende Verfahren sind nicht möglich, da diese durch das 3–4 mm starke Frontglas abgedeckt ist.To a lesser extent, the active layers of the modules to be recycled consist mainly of amorphous silicon a-Si: H or cadmium telluride CdTe, both of which are black, and without identification of the manufacturer it is not possible to determine which of the two materials is present. Spark erosion, EDX analysis and similar direct film attacking techniques are not possible because they are covered by the 3-4 mm thick front glass.
Die Module mit CdTe sind kritisch in der Verarbeitung, da sie wegen potentiell anfallender giftiger Cadmiumstäube staubdichte und damit kostenintensive Verarbeitungsräume und Weiterverarbeitungs-strecken benötigen. Es besteht daher Bedarf an einer schnellen Sensorik, die es erlaubt, aus einer großen Stückzahl von in das Recycling einlaufenden Modulen solche mit CdTe auszusortieren. Die Bestimmung muss durch das freiliegende Frontglas erfolgen.The modules with CdTe are critical in their processing because they require dust-proof and thus cost-intensive processing rooms and processing lines because of potentially toxic cadmium dusts. There is therefore a need for a fast sensor system which allows to sort out CdTe from a large number of modules entering the recycling process. The determination must be made through the exposed front glass.
In
Im Unterschied hierzu wird erfindungsgemäß auf fertigen Dünnfilm-Photovoltaik-Modulen am Ende ihrer Lebenszeit beim Einlaufen in den Recyclingprozess durch eine massive Energieeinstrahlung durch das Frontglas hindurch unter Verwendung von handelsüblichen Laserdioden im Wellenlängenbereich von 600 nm bis 800 nm und deren Ausrichtung auf einen von einem handelsüblichen berührungslosen Strahlungsthermometer auswertbaren Messfleck die stark absorbierende CdTe-Schicht schnell aufgeheizt, während in der wenig absorbierenden a-Si:H-Schicht sich die eingestrahlte Energie in der Tiefe der Schicht verteilen kann und damit in der Zeiteinheit eine geringere messbare Temperatur ergibt.In contrast, according to the invention on finished thin film photovoltaic modules at the end of their lifetime when entering the recycling process by a massive energy radiation through the front glass through using commercially available laser diodes in the wavelength range of 600 nm to 800 nm and their orientation to one of a commercial In the low-absorbing a-Si: H layer, the radiated energy can be distributed in the depth of the layer and thus results in a lower measurable temperature in the unit of time.
Die handelsüblichen Strahlungsthermometer haben Ansprechzeiten innerhalb von Sekunden, so dass sich bei schneller Erwärmung des Messflecks, d. h. bei ausreichender auf das Modul einwirkender Strahlungsleistung eine schnelle Charakterisierung des Moduls ergibt und damit das schnelle Aussortieren von CdTe-Modulen bei hohen einlaufenden Stückzahlen an Modulen. Es können somit starke Laserdioden im Bereich von 100 mW oder mehrere schwächere im Bereich von 0,1 bis 10 mW eingesetzt werden, jeweils unter Ausrichtung auf den Messfleck des Strahlungsthermometers. In der Auswertungssoftware werden Untergrundstrahlung, Reflexion, Streuungen u. ä. in einem Schwellenwert berücksichtigt. Eine genau senkrechte Ausrichtung von Einstrahlung und Messung kann dadurch erreicht werden, dass Einstrahlung und Messung kurzzeitig nacheinander erfolgen und dabei der Messfleck mittels einer mechanischen Schrittbewegung mit dem Einstrahlfleck zur Deckung gebracht wird.The commercial radiation thermometers have response times within seconds, so that with rapid warming of the measuring spot, d. H. if sufficient radiant power is applied to the module, this results in a fast characterization of the module and thus the rapid sorting out of CdTe modules at high incoming quantities of modules. Thus, strong laser diodes in the range of 100 mW or several weaker ones in the range of 0.1 to 10 mW can be used, each aligned with the measuring spot of the radiation thermometer. In the evaluation software, background radiation, reflection, scatters u. Ä. Considered in a threshold. An exactly vertical orientation of irradiation and measurement can be achieved by irradiation and measurement taking place for a short time in succession, whereby the measuring spot is brought into line with the irradiation spot by means of a mechanical step movement.
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 11
- Strahlungsthermometerradiation thermometer
- 22
- Laserdiodenlaser diodes
- 33
- Abschirmungshielding
- 44
- Frontglas Dünnfilm-SolarmodulFront glass thin-film solar module
- 55
- optische Schicht Dünnfilm-Solarmoduloptical layer thin-film solar module
- 66
- Schmelzkleber Dünnfilm-SolarmodulHotmelt adhesive thin-film solar module
- 77
- Rückseitenglas Dünnfilm-SolarmodulBack glass thin-film solar module
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- DE 69117480 [0004] DE 69117480 [0004]
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201310006363 DE102013006363A1 (en) | 2013-04-12 | 2013-04-12 | Sensor technology for the differentiation of thin-film solar modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201310006363 DE102013006363A1 (en) | 2013-04-12 | 2013-04-12 | Sensor technology for the differentiation of thin-film solar modules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102013006363A1 true DE102013006363A1 (en) | 2014-10-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE201310006363 Withdrawn DE102013006363A1 (en) | 2013-04-12 | 2013-04-12 | Sensor technology for the differentiation of thin-film solar modules |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE102013006363A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69117480T2 (en) | 1990-12-31 | 1996-06-13 | Texas Instruments Inc | Sensor for controlling the manufacturing process of a semiconductor device |
-
2013
- 2013-04-12 DE DE201310006363 patent/DE102013006363A1/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69117480T2 (en) | 1990-12-31 | 1996-06-13 | Texas Instruments Inc | Sensor for controlling the manufacturing process of a semiconductor device |
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| Date | Code | Title | Description |
|---|---|---|---|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |