DE102012215220A1 - Method for color locus control of electro-optical components with conversion elements - Google Patents

Abstract

In various embodiments, a method (100) of making an inorganic optoelectronic device (202), the method (100) comprising: measuring at least one measurement parameter of an inorganic optoelectronic device (202); and processing the inorganic optoelectronic component (202) taking into account the measured measurement parameter value of the inorganic optoelectronic component (202), such that the optoelectronic properties (104, 106, 108, 110) of the inorganic, optoelectronic component (202) become a predetermined optoelectronic target Property (102).

Description

In various embodiments, a method and an apparatus for producing an inorganic, optoelectronic component are provided.

In the production of inorganic, optoelectronic components, for example inorganic light-emitting diodes (LED), there may be local variations in the layer thickness and doping. This can lead to deviations in the color, the brightness, the efficiency and the viewing angle dependence of inorganic, optoelectronic components of one type among each other.

The fluctuations can be a natural production dispersion of inorganic, optoelectronic components in the finished or partially finished state.

Inorganic, optoelectronic components with the same optoelectronic property are referred to as bin. The properties sought in the process may be referred to as target bins or target properties.

The production spread of an inorganic optoelectronic component from the target bin can be dependent on the position of the inorganic, optoelectronic component on the system carrier prior to singulation and on process variations during production due to deviations of the process systems from the calibration.

In order to produce a certain number of inorganic optoelectronic devices having a desired target characteristic, such as a particular color valence, conventionally more devices are produced than are needed, i. the natural fluctuation of production is compensated by an uneconomical overproduction, the rest is throwing.

In various embodiments, a method and a device for producing an inorganic, optoelectronic component are provided with which it is possible to adapt inorganic, optoelectronic components having different optoelectronic properties to a common target property

In the context of this description, an organic substance can be understood as meaning a compound of the carbon characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. Furthermore, in the context of this description, an inorganic substance can be understood as meaning a compound without carbon or a simple carbon compound, characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood as meaning a compound present in chemically uniform form, characterized by characteristic physical and chemical properties, regardless of the respective state of matter, with compounds which contain carbon and are free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean something which consists of constituents of two or more different substances whose constituents are, for example, distributed very finely. A substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

A phosphor can be understood to mean a substance which, with loss, converts electromagnetic radiation of one wavelength into electromagnetic radiation of a different wavelength, for example by means of phosphorescence or fluorescence. The energy difference from absorbed electromagnetic radiation and emitted electromagnetic radiation may be expressed in phonons, i. Heat, and / or converted into photons by emission of electromagnetic radiation having a wavelength proportional to the energy difference.

The dimensional stability of a geometrically shaped substance can be understood on the basis of the modulus of elasticity and the viscosity.

A fabric may in various embodiments be considered dimensionally stable, ie hard and / or strong in this sense, if the fabric has a viscosity in the range of about 5 × 10 ² Pa · s to about 1 × 10 ²³ Pa · s and has a modulus of elasticity in a range of about 1 × 10 ⁶ Pa to about 1 × 10 ¹² Pa, since the fabric may show a viscoelastic to brittle behavior after forming a geometric shape.

A fabric may be considered malleable, ie soft and / or liquid in this sense, if the fabric has a viscosity in the range of about 1 × 10 ^-2 Pa · s to about 5 × 10 ² Pa · s or has a modulus of elasticity up to about 1 × 10 ⁶ Pa, since any change in the geometric shape of the fabric can lead to irreversible, plastic change in the geometric shape of the fabric.

A dimensionally stable fabric can be made plastically moldable by adding plasticizers, for example, solvents, or increasing the temperature, i. be liquefied.

A plastic moldable substance can become dimensionally stable by means of a crosslinking reaction and / or removal of plasticizers, i. be solidified.

The solidification of a substance or mixture of substances, i. the transition of a material from malleable to dimensionally stable may include changing the viscosity, for example, increasing the viscosity from a first viscosity value to a second viscosity value. The second viscosity value can be many times greater than the first viscosity value

For example, in a range of about 10 to about 10 ⁶ . The fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.

The solidification of a substance or mixture of substances, i. the transition of a substance from malleable to dimensionally stable, may include a process or process in which low molecular weight components are removed from the substance or mixture, for example solvent molecules or low molecular weight, uncrosslinked constituents of the substance or mixture, for example drying or chemical crosslinking of the substance or the mixture of substances. In the moldable state, the substance or the mixture of substances may have a higher concentration of low molecular weight substances in the entire substance or substance mixture than in the dimensionally stable state.

In various embodiments, a method of manufacturing an inorganic optoelectronic device is provided, the method comprising: measuring at least one measurement parameter of an inorganic optoelectronic device; and processing the inorganic optoelectronic component taking into account the measured parameter value of the measurement of the inorganic optoelectronic component, such that the optoelectronic properties of the inorganic, optoelectronic component are changed to a predetermined optoelectronic target property.

With regard to emitted or absorbed electromagnetic radiation, optoelectronic properties can be, for example, the intensity (brightness), the wavelength spectrum (color valence), the viewing angle dependence, the absorption or the efficiency of an optoelectronic component.

The target properties may be the properties of the inorganic, optoelectronic component planned with the intended layer cross section, natural variations in production being able to form deviations of the optoelectronic properties from the target properties (initial states).

However, the target property may also be an individually different, adjustable target property, i. the concrete layer cross section of the inorganic, optoelectronic components can be the starting point for the optoelectronic properties that can be set according to a specific customer request.

The target property may have several defined parameters with a respective allowable variance.

An adaptation or a compensation of the initial state can be dispensed with if the initial state corresponds to the target state or lies within the variance.

The number of possible output states and processing options or adjustments is not limited. Rather, initial states and adjustments can be discrete or even infinitesimally different from each other and from each other.

The inorganic, optoelectronic components with different optoelectronic properties can have the same or different design. As a like type, a planned layer cross-section of the device can be understood, i. same number of layers, same thickness of the layers, the same sequence of layers and the same material composition of the layers.

However, variations in the optoelectronic properties of the inorganic, optoelectronic components can occur with one another, for example, deviations of the thicknesses of individual layers, for example in a range of approximately 0% to approximately 10%, for example in the doping of semiconducting doped layers in a range of about 0% to about 10%.

In one embodiment, the optoelectronic properties of the inorganic, Optoelectronic component may be formed by means of at least one measurable parameter.

Measurable parameters are to be understood, for example, as non-invasively determinable, for example by applying an electric current or measuring the intensity of absorbed or emitted electromagnetic radiation and without creating an irreversible cross-sectional view of the component, for example in the production of the optoelectronic component.

In yet another embodiment, the measurable parameter may have a measurement parameter with regard to emitted or absorbed electromagnetic radiation from the group of the measurement parameters: the brightness or the intensity; the wavelength spectrum or color valence; the viewing angle dependence; the absorption or the efficiency. The absorption of electromagnetic radiation, for example, be of importance in photovoltaic devices (solar cells) and / or detectors for electromagnetic radiation to protect the detectors, for example in high-energy radiation, such as X-rays.

In yet another embodiment, measuring the measurement parameter may include measuring the optoelectronic properties after or during fabrication of the inorganic, optoelectronic component.

During measurement, a single measurement parameter or several measurement parameters can be determined simultaneously or successively, for example the wavelength spectrum of emitted electromagnetic radiation (color) and the brightness, for example by means of a photodetector after application of an operating voltage to the component.

After measuring the optoelectronic properties of the inorganic, optoelectronic components, concrete compensation measures can be determined and the inorganic, optoelectronic components can be set to the common target property.

In yet another embodiment, the processing of at least one value of a measurement parameter of the optoelectronic properties of the inorganic, optoelectronic component can be formed by means of a compensatory measure.

A compensatory measure can be a compensation element or a compensation process. The compensatory measures may comprise the application of a substance or substance mixture to the component or a removal of a part of the component, for example a homogeneous reduction of the layer thickness or a roughening or smoothing of the exposed, electromagnetic radiation absorbing or emitting surface of the component.

The selection of concrete compensation measures can be carried out by connecting the measuring device (s) to a selection device which has a process matrix, automatically, for example electronically, for example computer-aided.

The selected balancing measure alters the inorganic optoelectronic device such that the deviation from the target properties is lowest with respect to the non-selected alternative compensation measures. One of at least two compensatory measures is selected.

The process matrix can have, for example, procedural regulations with which the color valence of the electromagnetic radiation of an inorganic light-emitting diode can be adjusted.

The principle of the process matrix may be illustrated by, but not limited to, an example of an LED emitting blue light.

In the light path of the LED, a converter element may be formed. The converter element may comprise a phosphor, wherein the phosphor may convert the blue light of the LED, for example in yellow light. The color mixing of the blue light of the LED with the yellow light of the converter element can give white light.

An increase in the blue color component can be adjusted, for example, by means of an adaptation element, for example a silicone layer, or an adaptation process, for example a roughening of the surface emitting or absorbing electromagnetic radiation. By means of these adaptation measures, the proportion of the blue light totally reflected in the converter element or in the LED can be reduced at the mixed light, i. the blue component can be increased.

An increase in the wavelength-converted color component of the mixed light can be set, for example, by means of a scattering layer. The scattering layer can divert a portion of the blue light into the converter element. Thereby, the proportion of converted light in the mixed light can be increased.

In one embodiment, the compensating element may be formed as a coating or compensating coating or compensating coating.

In one embodiment, the compensation element may have a thickness in a range of about 10 μm to about 500 μm, for example in a range of about 25 μm to about 200 μm.

The compensating element may for example comprise or be formed from an epoxide or a silicone, for example a polydimethylsiloxane or a polydiphenylsiloxane / polydimethylsiloxane.

In one embodiment, the compensating coating can be formed such that the proportion of totally reflected electromagnetic radiation in the optical path of the inorganic, optoelectronic component is reduced.

In one embodiment, the compensating coating can be formed such that the proportion of converted electromagnetic radiation in the optical path of the inorganic, optoelectronic component is increased, for example as a scattering layer.

The setting of the color locus by means of a compensating element can be adjusted for example by means of the mass fraction of scattering centers on the compensating element and / or the thickness of the compensating element.

In yet another embodiment, the balancing process or the balancing process may be a process selected from the group of processes: smoothing, roughening, reducing the layer thickness or structuring.

In yet another embodiment, two or more compensation elements or compensation processes can be applied to an inorganic, optoelectronic component.

In yet another embodiment, the two or more compensation elements may process different parameters of the inorganic optoelectronic device toward the target properties, i. improve.

Improving an optoelectronic property can be understood to mean the approximation of the optoelectronic properties to the target property, for example changing the color valence of the emitted light of the component towards the target property, for example from white-yellow light to white-blue light.

In yet another embodiment, different compensation measures can be combined with one another in order to process the value of at least one measurement parameter of the optoelectronic properties of an inorganic, optoelectronic component to an optoelectronic target property.

As a combination of different compensation measures, for example, the combination of a compensation process and a compensation element can be understood, for example, the roughening of the surfaces of the component can reduce the total reflection. A scattering balance element on the roughened surface can then increase the proportion of wavelength conversion, increase electromagnetic radiation.

In yet another embodiment, the value of two or more measurement parameters can be changed simultaneously by means of a compensatory measure.

In yet another embodiment, the change of a value of a measurement parameter of a previous compensation measure can be compensated by means of a compensatory measure.

Compensation may be necessary, for example, if a compensatory measure alters the color valence of emitted electromagnetic radiation, but at the same time reduces the intensity or brightness, for example because less light is coupled out.

In yet another embodiment, the two or more compensatory measures may have as compensation elements with layers with the same or different layer cross-section.

The roughness of an inner boundary surface, for example with air inclusions, can have, for example, a scattering effect with the same material composition of successively applied leveling layers.

In yet another embodiment, the two or more compensation processes may have the same or different processes with the same or different process parameters, from the group of process parameters: temperature, atmospheric composition of the atmosphere, plasma power or gas pressure, or similar conventional process parameters.

In yet another embodiment, the optoelectronic properties of the inorganic, optoelectronic component can be processed in combination of two or more compensation elements for the target property.

The specific compensatory measures for the respective optoelectronic properties are of the concrete design of the Optoelectronic component dependent, for example, from the output color value.

In yet another embodiment, the processing of the optoelectronic properties of an inorganic, optoelectronic component may be provided during or after the production of the inorganic, optoelectronic component.

For the application of compensation elements, the substances necessary for the adjustments can be provided according to the process matrix, for example different dispersions or suspensions with silicone and scattering centers of different size and / or different mass fraction.

In yet another embodiment, further optical layers can be formed between the optoelectronic component and the compensation element. The further layers may have an adhesion-enhancing, diffusion-inhibiting and / or optically coupling effect.

Balancing the optoelectronic properties towards the target property may be part of the frontend or backend fabrication of the optoelectronic device.

In yet another embodiment, the inorganic, optoelectronic component can be formed as a radiation-emitting component.

In yet another embodiment, the radiation-emitting inorganic, optoelectronic component can be formed as an inorganic light-emitting diode.

In yet another embodiment, the inorganic, optoelectronic component can be formed as a radiation-detecting component.

In yet another embodiment, the radiation-detecting inorganic, optoelectronic component can be designed as a detector for electromagnetic radiation, for example X-radiation, ultraviolet radiation, infrared radiation.

In various embodiments, an apparatus is provided, the apparatus comprising: an input device configured to input at least one common target optoelectronic property of the inorganic optoelectronic device; a measuring device configured to measure at least one optoelectronic property of the inorganic, optoelectronic component and to transmit it to a selection device; a compensation device configured to provide at least two compensation elements and / or compensation processes with different optoelectronic effect with respect to the target property for the inorganic, optoelectronic component for selection by means of a selection device; the selection device configured to select at least one compensation element and / or at least one compensation method using the measured at least one optoelectronic properties of the inorganic optoelectronic component and the optoelectronic effect for the inorganic optoelectronic component such that after applying the at least one selected one Compensating element and / or the at least one selected compensation method, the optoelectronic properties of the inorganic, optoelectronic component to the target property to be changed.

An inorganic, optoelectronic component can also be understood as a plurality of inorganic, optoelectronic components on a common substrate, for example a chip wafer or panel.

In one embodiment of the device, the input device can be set up for inputting the degree of production of the inorganic, optoelectronic component.

The target property and the degree of production can be transmitted by means of information transport to the selection device.

In yet another embodiment of the device, the measuring device for measuring a plurality of different measurement parameters can be set up simultaneously or successively.

In one embodiment of the device, the compensation element can be configured as a coating, a film, a platelet and / or a coated film.

In one embodiment of the device, the compensation process can be set up as a process from the group of processes: smoothing; roughening; Reduce layer thickness or structure.

In yet another embodiment, the inorganic, optoelectronic component may have a smaller deviation from the optoelectronic target property after processing by means of the selected compensation element or compensation method with respect to the non-selected compensation element or compensation method.

In yet another embodiment, the target property can be transmitted as a spectrum in the input device. The selection of a compensation process and / or compensation element can be done, for example, by means of balancing the measured spectrum with the target spectrum, the difference between the spectra being compared with the optoelectronic effect of known compensation measures.

The inorganic, optoelectronic component can be transported into the device by means of a transport device after or during the manufacture of the inorganic, optoelectronic component.

The transport of a plurality of inorganic, optoelectronic components may be formed on a common system carrier or after the separation of the plurality of inorganic, optoelectronic components.

In yet another embodiment, the transport of the inorganic, optoelectronic component in the device can be set up by means of a gripping device (and / or a conveyor belt).

In yet another embodiment, the compensating device can be set up to carry out at least one of the tasks from the group of tasks: separation of the inorganic, optoelectronic components; Labeling of the inorganic, optoelectronic component with compensating element to be applied and / or compensating process to be carried out; Identifying the inorganic optoelectronic device; Sorting the inorganic, optoelectronic component according to the compensation process and compensation element; Performing the balancing process; or applying the compensation element.

In the compensation device, a plurality of inorganic, optoelectronic components can first be singulated in a singulation device if the plurality of inorganic, optoelectronic components have a common system carrier and a separation should be necessary for the execution of the compensation measures.

Separation may be necessary, for example, if multilevel adaptation measures are to be developed for some of the plurality of inorganic, optoelectronic components and not for others of the plurality of inorganic, optoelectronic components.

Another reason for separating the plurality of inorganic, optoelectronic components may be incompatible compensating measures, for example the application of an adhesive layer and the subsequent application of a compensating element, for example a phosphor plate, as a multistage compensating measure may for example be incompatible with the chemical mechanical polishing of a surface and therefore a separate processing and separation of the plurality of inorganic, optoelectronic components.

The balancing can furthermore have a separation of the plurality of inorganic, optoelectronic components if inorganic, optoelectronic components have optoelectronic properties which already correspond to the target properties and thus no compensatory measure is necessary.

Furthermore, the selector may determine whether the components should be singulated and / or form logical groups, i. in which components the same or similar compensatory measures are formed and therefore can be processed together.

However, the singulation device may be optional, for example because components are already transported isolated in the device or a separation of the components is not possible or not provided, for example, in a plurality of planar and / or coupled inorganic, optoelectronic devices.

In the singulation device, the components can be marked with their individual compensation measures, for example electronically, for example in an information memory within the compensation device based on their position on the system carrier or optically by means of laser, for example by forming a barcode on an edge region of the device that does not fulfill an opto-electronic task ,

From the singling device or from the measuring device, a transport of the inorganic, optoelectronic component into the ident-sorting device can take place.

Without separation device or separation of the information flow and the transport of the components can be formed directly from the measuring device in the ident-sorting device. Furthermore, the individual marking of the components with their compensatory measures in the ident-sorting device can be formed without singulation device.

In the ident-sorting device isolated inorganic, optoelectronic Components are identified by means of their markings and transported according to their compensatory measures to the balancing devices. If the optoelectronic properties already correspond to the target bin, the inorganic, optoelectronic component can be transported out of the device, ie the compensation measures are completed.

For non-isolated devices, the ident-sorting device may set the beginning of compensation for a device, i. trigger.

In yet another embodiment, the compensation device can have one or more different compensation systems.

A compensating system may be a device for applying compensating layers, for example an adhesive layer, scattering layer, coupling layer, waveguide layer, for example a chemical and / or physical vapor deposition system (chemical vapor deposition, physical vapor deposition, sputtering), a spray coating, a dip coater (dip coating), a spin coater (spin coating), a doctor blade (screen printing) or similar, conventional process equipment.

In the compensation system for compensation layers, depending on the individual optoelectronic properties of the inorganic, optoelectronic component according to the selection device, individual coating methods and / or substances and / or mixtures and / or process parameters, such as temperature, humidity, pressure, solvent, solution concentration, layer thicknesses, drying times, or similar, conventional parameters.

Another equalization system can be designed as a device for applying a compensating film or a compensating plate, for example a film having a scattering effect, to a film with wavelength-converting action, for example by means of lamination.

Another equalization system can be a device for a compensation process, for example smoothing, for example, chemical-mechanical polishing; Etching, for example, wet-chemically by acids or physically by means of plasma, structuring, doping, plasma treatment of the exposed surface of the device or similar, conventional methods for the treatment of surface properties.

In one embodiment, the compensation element may have a thickness in a range of about 10 μm to about 500 μm, for example in a range of about 25 μm to about 200 μm.

In one embodiment, the device may be part of a conventional production plant of inorganic, optoelectronic components and be adjusted by means of the device, the thickness of the adhesive layer and / or the nature of the cover glass and / or the surface roughness, for example, the thin-film encapsulation or second electrode.

The equalization systems can identify individual systems, for example a single vapor deposition system, or a series of systems, for example, when laminating films, comprising a system for applying adhesive and a system for applying lamination film.

The device may comprise a further transport device of the components of the balancing devices.

The components can be transported out of the device if the optoelectronic properties of the components correspond to the target lens, for example for applying the encapsulation or, for example, in the backend production.

However, the inorganic, optoelectronic component can also run through the device again, for example for setting further optoelectronic properties, for example the brightness after setting the color. Several devices can be connected in series or in the input device, the Zielbin and / or the degree of production of the device can be changed manually or by means of a machine program. The transport from the device can then be a transport to a measuring device.

Other reasons for re-cycling the devices after exiting the equalizers through the device may be checking the optoelectronic properties, i. the compensatory measures can be verified.

In the case of multi-level compensation measures, re-running can be the implementation of further compensation measures after the previous measure has been completed. When passing through the device in a multi-stage process, ie when the multi-level compensation measure is not formed in a compensation system, an information flow to the ident-sorting device of the equalization systems and / or an information memory in the ident-sorting device may be necessary Updated the status of the compensation measure and coordinated the next compensation measures. Embodiments of the invention are in the figures shown and are explained in more detail below.

Show it

1 a schematic representation of an individualized Binanpassung, according to various embodiments;

2 a schematic representation of an apparatus for individual Binanpassung, according to various embodiments:

3 a diagram of the color locus of an inorganic, optoelectronic component with different compensation elements, according to various embodiments;

4 Measured values of the change of the color location by means of different compensation elements, according to various embodiments;

5 Measured values of the change in the brightness by means of different compensation elements, according to various embodiments;

6 Diagrams for viewing angle dependence of the color locus of different inorganic, optoelectronic components, according to various embodiments;

7 two plan views of an inorganic, optoelectronic device, according to various embodiments;

8th the dependence of the color location on the observation angle of different inorganic, optoelectronic components, according to various embodiments;

9 a schematic representation of an apparatus for individual Binanpassung, according to various embodiments;

10 a schematic representation of a specific embodiment of the device for individual Binanpassung, according to various embodiments; and

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In the context of this description, inorganic, optoelectronic components having the same optoelectronic property can be referred to as a bin. The properties sought in the process may be referred to as target bin or target properties in the context of this description.

1 shows a schematic representation of an individualized Binanpassung 100 , according to various embodiments.

Shown are different initial states of inorganic, optoelectronic devices with the optoelectronic properties 104 . 106 . 108 . 110 during or after the production of the inorganic, optoelectronic components.

With regard to emitted or absorbed electromagnetic radiation, optoelectronic properties can be, for example, the intensity (brightness), the wavelength spectrum (color valence), the viewing angle dependence, the absorption or the efficiency of an optoelectronic component.

The customized bin adjustment 100 can as a selection process 100 , for example, a process matrix 100 , be understood in terms of initial states 104 . 106 . 108 . 110 and one or more optoelectronic target property (s) 102 a selection of compensation processes 112 . 114 . 116 . 118 or compensating elements 112 . 114 . 116 . 118 with which the target property (s) 102 both inorganic, optoelectronic components with the optoelectronic properties 104 . 106 . 108 . 110 can / can be adjusted.

The number of possible output states 104 . 106 . 108 . 110 and adjustments 112 . 114 . 116 . 118 is not limited to the number of possibilities presented. Rather, output states can 104 . 106 . 108 . 110 and adjustments 112 . 114 . 116 . 118 discreetly or even infinitesimally different from each other and from each other.

The inorganic, optoelectronic components with different optoelectronic properties 104 . 106 . 108 . 110 may have the same or different design. As a same design, a planned layer cross-section of the component can be understood, ie an equal number of layers, the same thickness of the layers, the same sequence of layers, the same material composition of the layers.

The inorganic, optoelectronic components with different optoelectronic properties 104 . 106 . 108 . 110 can target a common optoelectronic property 102 adjusted or balanced, ie to a common target property 102 be set. On an adjustment or a balance of the initial state can be omitted if the initial state 104 . 106 . 108 . 110 the destination state 102 corresponds, for example, in the device with the properties 110 ,

For the components with different characteristics 104 . 106 . 108 can depend on the individual optoelectronic properties 104 . 106 . 108 , different adjustments 112 . 114 . 116 . 118 to set the target property 102 be made.

In yet another embodiment, the same adaptation measure for two inorganic, optoelectronic devices of the same type, the optoelectronic properties vary differently, i. the effect of the adaptation measure can be different depending on the specific embodiment of a component. For example, the proportion of total reflected radiation can change by means of the effect of the adaptation measure.

However, in another embodiment, the optoelectronic properties may also be different, i. E. the amount of the measured value that quantifies the opto-electronic property may differ.

In one embodiment, depending on individual output characteristics 104 . 106 . 108 the adaptation is a compensatory measure 112 . 118 or two and more compensatory measures 114 . 116 require.

In one embodiment, a single compensation measure, for example 114 , change several optoelectronic properties simultaneously, such as brightness and color location.

In one embodiment, the simultaneous change of two or more optoelectronic properties can lead to an improvement of at least one optoelectronic property. By improving an opto-electronic property, the approximation of the optoelectronic properties to the target property may be understood, for example, changing the color valence, i. of the wavelength spectrum, the emitted light of the device towards the target property, for example, from white-yellow light to white light.

In yet another embodiment, further compensatory measures, for example, the adjustment measure 116 Improve same or other optoelectronic properties, for example, the viewing angle dependence, for example, with a scattering layer, or by means of previous compensation measures to improve or compensate for poorly improved or deteriorated optoelectronic property, for example, the brightness. For example, by means of 114 the color valence of the light, ie the wavelength of the light, can be changed to the target property, but the brightness can be reduced. The further adaptation 116 can then increase the brightness, ie the intensity of the electromagnetic radiation, for example by reducing the total reflection by roughening the surface.

In yet another embodiment, the adaptation of the optoelectronic properties to the target properties can be achieved in the sum of the compensation measures, i. An individual compensation measure does not need to change an opto-electronic property to the respective target property. The target property can also be set only in the context of other compensation measures.

In yet another embodiment, the successive adaptation measures, for example 114 . 116 be identical, for example, a same material composition, a same layer cross-section, have the same layer thicknesses; or be formed differently, for example, a different material composition, a different layer cross section, different layer thicknesses; or differ in one or more properties, for example the same material composition, different layer cross-section, different layer thicknesses.

In yet another embodiment, the compensation processes may be different, for example in the process parameters, for example temperature, power of a microwave generator in a plasma treatment.

In yet another embodiment, the adjustments 112 . 114 . 116 . 118 the initial states 104 . 106 . 108 be formed differently, for example by applying a layer to the optoelectronic device, for example wet-chemical application, for example screen printing, vapor deposition, spraying, deposition or by applying a compensating foil or by means of a chemical or physical treatment of the surface of the optoelectronic device, such as etching, polishing.

In yet another embodiment, different or equal compensation measures can be combined with one another, for example applying a leveling layer and applying a compensating film, for example applying adhesive and a film, for example gluing a film, wherein both compensation elements have a planned optical effect.

The for the respective optoelectronic properties 104 . 106 . 108 concrete compensatory measures 112 . 114 . 116 . 118 are dependent on the specific configuration of the optoelectronic component, for example the refractive indices of the substances used or the doping and purity of individual layers, for example the optical thickness of the individual layers and the absorption in the individual layers.

2 shows a schematic representation of the light path in an inorganic, optoelectronic device, according to various embodiments.

Schematically illustrated are three embodiments 200 . 220 . 240 an inorganic, optoelectronic component.

An inorganic, optoelectronic component 202 may, for example, as an inorganic, electromagnetic radiation emitting device 202 be educated.

An inorganic, electromagnetic radiation emitting device 202 In various embodiments, an electromagnetic radiation-emitting semiconductor component 202 be and / or as an inorganic, electromagnetic radiation emitting diode 202 , as a transistor emitting electromagnetic radiation 202 or a fluorescent lamp 202 be educated.

The electromagnetic radiation 208 can, for example, light in the visible range 208 , UV radiation 208 and / or infrared radiation. In this context, the inorganic, electromagnetic radiation-emitting component may be formed, for example, as a light-emitting diode (LED), as a light-emitting transistor or as a light-emitting fluorescent lamp.

The illustrated inorganic, optoelectronic component 202 can be a schematic representation of the principle of action of a variety of inorganic optoelectronic devices 202 be understood.

The light-emitting inorganic, optoelectronic component 202 may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting inorganic, optoelectronic component 202 be provided, for example, housed in a common housing.

On or above the inorganic, optoelectronic component 202 can in physical contact a converter element 204 be educated.

The converter element 204 However, also can not physical contact with the inorganic, optoelectronic device 202 have, however, be formed in the optical path of the inorganic, optoelectronic component, for example as a remote phosphor (remote phosphor).

The converter element 204 may be a phosphor having ceramic; a phosphor having crystal; a phosphor layer; or comprise or are formed from a mixture of at least one phosphor and an organic substance or an organic substance mixture.

The converter element 204 For example, it may be wholly or partially comprised of or formed from a crystal or ceramic.

However, the phosphor can also form the ceramic or the crystal.

Further, for example, a crystal converter element 204 be a single crystal.

The substance mixture of the converter element 204 from at least one phosphor and an organic or organic substance Mixture may have as organic or organic mixture, for example, a silicone or an epoxy. The at least one phosphor can be distributed in the substance mixture of the converter element, for example embedded.

For example, a phosphor may include Ce ³⁺ doped garnets such as YAG: Ce and LuAG, for example, (Y, Lu) ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ ; Eu ²⁺ doped nitrides, for example CaAlSiN ₃ : Eu ²⁺ , (Ba, Sr) ₂ Si ₅ N ₈ : Eu ²⁺ ; Eu ²⁺ doped sulfdides, SIONe, SiAlON, orthosilicates, for example (Ba, Sr) ₂ SiO ₄ : Eu ²⁺ ; Chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate: Eu) and / or SCAP, halophosphate or be formed therefrom.

The phosphor used may in various embodiments be a phosphor mixture comprising a mixture of different phosphors, whereby, for example, light can be generated which combines several different colors.

In one embodiment, the inorganic, optoelectronic component 202 electromagnetic radiation 208 . 210 . 214 emit, which can also be called primary radiation.

The primary radiation 208 . 210 . 214 can of the inorganic, optoelectronic device 202 as a direct beam 208 (indicated by the arrow 208 ) in an image plane of the inorganic, optoelectronic component 202 be emitted.

A part 210 the primary radiation 208 . 210 . 214 can in the converter element 204 be converted and as wavelength-converted, electromagnetic radiation 212 (indicated by the arrow 212 ) in the image plane of the inorganic, optoelectronic component 202 be emitted.

The wavelength-converted, electromagnetic radiation 212 . 216 Can also be used as secondary radiation 212 . 216 be designated.

Another part 214 the primary radiation 208 . 210 . 214 can from the surface 222 the converter element 204 be totally reflected.

In a converter element 204 with a refractive index of approximately 1.8, the total reflection of the primary radiation for angles of incidence of the primary radiation with respect to the surface normal of the surface 222 the converter element 204 of about 34 ° occur.

The totally reflected portion of the primary radiation 214 can in the image plane of the inorganic, optoelectronic component 202 not or as secondary radiation 216 be emitted.

The illustrated embodiment may, for example, as the initial state 104 . 106 . 108 an inorganic optoelectronic component or as an inorganic, optoelectronic component with optoelectronic target property (s) 110 be understood.

In a further embodiment 220 For example, on or above the converter element 204 the first embodiment 200 a compensation element 206 be educated.

The compensation element 206 may comprise or be formed from the group of substances as a substance: a silicone, for example a polydimethylsiloxane or a polydimethylsiloxane / polydiphenylsiloxane; a resin, for example, an epoxy resin or the like.

The compensation element 206 can, for example, in a moldable state on the converter element 204 be applied.

The application can be carried out, for example, from a dispersion or suspension, for example with a solvent, for example water.

The dispersion or suspension can be applied to the converter element, for example by means of spraying, printing (jetting), spin-coating, dip-coating or similar, conventional methods 204 be applied

After application of the malleable compensation element 206 the compensating element can be solidified.

The solidification of the substance or of the substance mixture of the shapeable compensation element 206 may include devolatilization and / or irradiation of the moldable balance element 206 with electromagnetic radiation, for example by means of UV or IR irradiation.

For example, devolatilization may include drying at about 50 ° to about 200 ° C for about 5 minutes to about 2 hours.

Irradiation with electromagnetic radiation, for example UV irradiation for a few seconds, for example in a range from about 1 second to about 60 seconds, may, for example, be a chemical crosslinking of the substance or of the substance mixture of the formable compensation element 206 exhibit.

The compensation element 206 may have a refractive index less than or greater than the value of the mean refractive index of the converter element 204 exhibit. This allows the total reflection at the interface 222 the converter element can be reduced or prevented.

The refractive index of the compensating element 206 For example, it may have a value in a range of about 1.0 to about 1.8; for example, 1.1 to about 1.7; for example, 1.3 to about 1.6; for example, about 1.41 to about 1.53.

A compensation element 206 For example, a silicone having an average refractive index of about 1.1 may be formed as an airgel or the like.

The minimum angle of total reflection at the interface 224 of the compensating element 206 with air, by means of the higher refractive index of the compensating element 206 with respect to air, for example, to a value of about 45 °.

This can cause primary radiation 218 that without compensation element 206 would be totally reflected ( 214 ) are emitted into the image plane of the inorganic, optoelectronic component and thereby the proportion of totally reflected primary radiation 214 be reduced.

The proportion of the emitted secondary radiation can in the embodiment 220 be less with compensating element than in the embodiment 200 without compensation element 206 , The cause of the reduction in the proportion of secondary radiation can be the reduction in the proportion of primary radiation emitted by the surface 224 the converter element 206 in the converter element 206 is reflected.

By adjusting the thickness of the compensating element 206 the color valence in the image plane of the inorganic, optoelectronic component can be adjusted.

Instead of a compensation element 206 could be the surface 222 the converter element 206 also be roughened so that the angle of incidence of the primary radiation on the surface 222 locally smaller than the angle of total reflection can be.

In a further embodiment 240 , similar to the second embodiment 220 of the compensation element 206 , the compensation element scattering centers 230 exhibit.

By means of the scattering centers 230 can be part of the primary radiation 228 from the compensating element into the converter element 206 be redirected. As a result, the proportion of primary radiation in the image plane of the inorganic, optoelectronic component can be reduced. Furthermore, thereby the proportion of secondary radiation 232 be increased in the image plane of the inorganic, optoelectronic component.

The increase in the proportion of secondary radiation 232 in the image plane can be dependent on the mass fraction of the scattering centers 230 on the compensating element 206 , the size and shape of the scattering centers 230 , as well as the distribution of the scattering centers 230 in the compensation element.

For example, the scatterers 230 homogeneous or inhomogeneous in the layer cross section of the compensating element 206 be distributed.

scattering centers 230 For example, as cavities 230 or particles 230 be educated. Essential for the scattering centers 230 may have a refractive index other than the average refractive index of the substance or mixture of substances of the matrix 226 be in which the scattering centers 230 are embedded.

The matrix 226 of the compensating element 234 the third embodiment 240 may be similar or equal to the substance or mixture of substances of the compensating element 206 the second embodiment 220 be educated.

The scattering centers 230 may have a mass fraction on the balance element in a range of about 0% to about 15%.

The compensating element of the third aspect may have a thickness in a range of about 10 μm to about 1 mm, for example, 90 μm to about 150 μm.

The primary radiation may, for example, be visible electromagnetic radiation, for example blue light or light of another suitable or desired wavelength.

The secondary radiation can be, for example, visible electromagnetic radiation, for example yellow light.

The color mixture of the primary radiation with the secondary radiation can form a white light.

By means of the compensation element 234 the color valence of the color mixture can be adjusted in the direction of the primary radiation or in the direction of the secondary radiation.

3 shows a diagram of the color locus of an inorganic, optoelectronic component with different compensation elements, according to various embodiments.

In the diagram 300 is the color locus C _x 302 a standard color chart as a function of thickness 304 a compensation element 226 shown.

The color locus C _x 302 an inorganic, optoelectronic component without compensating element 206 . 226 is as a curve 306 in the diagram 300 shown.

The color locus C _x 302 an inorganic, optoelectronic component with a non-scattering compensation element 206 is as a curve 308 in the diagram 300 shown.

The color coordinates C _x 302 inorganic, optoelectronic components with compensation element 234 with scattering centers 230 are as curves 310 (0.5%), 312 (1 %), 314 (1.5%), 316 (2%), 318 (2.5%), 320 (3%) in the diagram 300 shown, wherein the color point C _x increases with increasing mass fraction of the scattering centers 230 on the compensating element.

Up to a mass fraction of scattering centers on the compensation element of approximately 1%, the color locus C _x 302 with an increasing thickness of the compensating element 226 be reduced.

From a mass fraction of scattering centers on the compensation element of greater than approximately 1%, an increase in the color locus C _x 302 with increasing layer thickness 304 of the compensating element 226 be set.

In one embodiment, the scattering centers 230 Have alumina or be formed from it, for example, be configured as alumina particles.

In one embodiment, the scattering centers 230 have a dimension in a range of about 100 nm to about 5000 nm, for example in a range of about 500 nm to about 1000 nm.

In one embodiment, the scattering centers 230 be embedded in a matrix, for example a silicone matrix, be distributed for example in the silicone matrix, for example, be homogeneously distributed or be concentrated in one or more position / s in the silicone matrix. The silicone matrix may, for example, comprise a polydimethylsiloxane and / or a polydimethylsiloxane / polydiphenylsiloxane.

In one embodiment, the substance or the substance mixture of the matrix when distributing the scattering centers 230 have a malleable state in the matrix.

In one embodiment, the matrix may be after distributing the scattering centers 230 in the matrix, the matrix solidifies.

In one embodiment, the matrix may include scattering centers 230 be arranged in a moldable or solidified state in the light path of the optoelectronic component, for example, be applied.

Arranging the matrix with scattering centers 230 in a moldable state, for example, can be set up as dispensing and / or jetting.

Arranging the matrix with scattering centers 230 in a solidified state, for example, as a cohesive application of a platelet of matrix and scattering centers 230 be set up on or above the optoelectronic device. The plate can be formed in one embodiment, for example by means of a screen printing process.

In one embodiment, the matrix may additionally or instead of the scattering centers have a phosphor, for example, similar or equal to the converter element 206 ,

4 shows measured values of the change of the color location by means of different compensation elements, according to various embodiments.

In the illustrations (in each case table and graph) 400 shown are the thickness of the compensating element 404 (Columns of tables) and the relative mass fraction of scattering centers on the compensation element 402 (Rows of tables).

The entries in the table are the changes in the color locus ΔC _x 418 an inorganic, optoelectronic component with different thickness compensation elements with respect to the color locus of an inorganic, optoelectronic component of the same design without compensation element 422 shown.

Shown are the color changes 418 of compensating elements with thicknesses of approximately: 90 μm - 406 , 110 μm 408 and 130 μm 412 ,

A compensation element 234 with a mass fraction of scattering centers on the compensation element of 0% can be used as compensation element 206 be understood.

In the first presentation 400 is the change of the color locus ΔC _x for a compensation element 206 . 234 which is shown as a self-supporting compensation element 206 . 234 , similar or equal to a molded chip or molded bar, For example, having a silicone on the converter element 104 be applied.

The plate or bar may be mechanically cut, for example cut out of a foil or a silicone film. The dimensions of the wafer and / or the bar may be custom designed with a conventional material separating process.

The plate or the bar can be conclusively, for example, firmly bonded, fixed in the light path of the optoelectronic component, for example, be glued on or over the optoelectronic component.

In the third presentation 420 is the change of the color locus ΔC _x 418 for a compensation element 206 . 234 which is shown as a compensating layer 206 . 234 , on the converter element 104 was applied, for example, was glued.

The value of the color locus C _x can be increased (positive ΔC _x ) or reduced (negative ΔC _x ) by means of the compensating elements.

The greater the value of the thickness of the compensating element 206 . 234 is, the more the change of the color locus ΔCx can be pronounced.

5 shows measured values of the change of the brightness by means of different compensation elements, according to various embodiments.

In the representations respectively (table and graph) 500 shown, are the thickness of the compensating element 504 (Columns of tables) and the mass fraction of scattering centers 230 on the compensation element 502 (Rows of tables). Entries in the table are the changes in brightness 518 an inorganic, optoelectronic component with different compensation elements with respect to the brightness 524 an inorganic, optoelectronic component of the same type without compensation element shown.

Shown are the brightness change 518 of compensating elements with thicknesses of approximately: 90 μm - 506 , 110 μm 508 and 130 μm 512 ,

A compensation element 234 with a mass fraction of scattering centers on the compensation element of 0% can be used as compensation element 206 be understood.

In the three representations 500 . 510 . 520 The changes in the brightness of emitted electromagnetic radiation are shown for different production methods of the compensation elements 206 . 234 ,

In the first presentation 500 is the change of brightness 518 for a compensation element 206 . 234 shown, which as a self-supporting compensation element 206 . 234 , similar or equal to a small plate or bar, on the converter element 104 be applied. The plate or the bar may be mechanically cut, for example according to one of the embodiments of 4 ,

In the second presentation 510 is the change of brightness 518 for a compensation element 206 . 234 shown, which as a self-supporting compensation element 206 . 234 , similar or equal to a small plate or bar, on the converter element 104 be applied. The plate or bar can be cut to size with a laser.

Furthermore shown is a plan view 522 on the tailored converter element 104 ,

In the third presentation 520 is the change of brightness 518 for a compensation element 206 . 234 represented, which as a compensating layer 206 . 234 , on the converter element 104 be applied, for example, be glued.

The value of the brightness can be increased (positive value) or reduced (negative value) by means of the compensation elements.

The greater the value of the thickness of the compensation elements 206 . 234 and the value of the mass fractions of scattering centers 230 on the compensation element, the greater the brightness can be reduced.

By the method with which a compensation element 206 . 234 is formed, the brightness of the emitted electromagnetic radiation can be adjusted. The influence of the manufacturing process on the brightness during printing 520 can be the least.

6 shows diagrams for viewing angle dependence of the color locus of different inorganic optoelectronic devices, according to various embodiments.

In three diagrams 640 . 650 . 660 is the dependence of the color locus C _x 602 from the observation angle 604 shown, for different adjustment elements according to different manufacturing processes 640 . 650 . 660 ,

In the diagram 640 is the viewing angle dependence of compensating elements with different mass fractions of scattering centers on compensation element 608 . 610 . 612 represented, with respect to an inorganic, optoelectronic component 606 without compensation element.

The compensation element as a self-supporting compensation element 206 . 234 , similar or equal to a plate or bar, on the converter element 104 be upset. The plate or bar may be mechanically cut.

Represented are the viewing angle dependencies for compensating elements with a mass fraction of scattering centers on the compensating element for 5% 608 ; 10% 610 and 15% 612 ,

In the diagram 650 is the viewing angle dependence of compensating elements with different mass fractions of scattering centers on the compensating element 618 . 620 . 622 . 624 represented with respect to an inorganic, optoelectronic component 614 without compensating element or an inorganic, optoelectronic component 616 without scattering centers, ie a compensation element similar or equal to one of the embodiments 206 the description of the 2 ,

The compensating element can be used as a self-supporting compensating element 206 . 234 , similar or equal to a small plate or bar, on the converter element 104 be upset.

The plate or bar may be cut to size with a laser, for example.

Shown are the viewing angle dependencies for compensating elements with a mass fraction of scattering centers on the compensating element of 0% 616 ; 2% 618 , 4% 620 , 6% 622 and 8% 624 ,

In the diagram 660 is the viewing angle dependence of compensating elements with different mass fractions of scattering centers on the compensating element 628 . 630 . 632 . 634 . 636 with respect to an inorganic, optoelectronic component 626 without compensating element or an inorganic, optoelectronic component 628 without scattering centers, for example similar or equal to one of the embodiments 206 the description of the 2 represented.

The compensating element can be used as a compensating element, for example as a compensating layer 206 . 234 , on the converter element 104 be applied, for example, be printed.

Shown are the viewing angle dependencies for compensating elements with a mass fraction of scattering centers on the compensating element of 0% 628 ; 2% 630 , 4% 632 , 6% 634 and 8% 636 ,

The curves of the viewing angle dependence of the compensation elements with a mass fraction of scattering centers on the compensation element of 6% 634 and 8% 636 lie one above the other.

From the diagrams 640 . 650 . 660 It can be recognized that the homogeneity of the color valence with the observation angle increases with increasing mass fraction of scattering centers on the compensation element.

Between balancing elements of different production method 640 . 650 . 660 no significant difference can be detected.

7 shows two plan views of an inorganic optoelectronic device, according to various embodiments.

In the plan view 702 are five inorganic, optoelectronic components 708 on a common carrier 710 shown.

In the plan view 704 is a single, inorganic, optoelectronic device 708 shown in an optical magnification.

8th shows the dependence of the color location of the observation angle of different inorganic optoelectronic devices, according to various embodiments.

Shown are diagrams 800 . 830 for compensating elements without scattering centers 206 , For example, according to one of the embodiments of the description of 2 ; with scattering centers 234 , For example, according to one of the embodiments of 2 with a mass fraction of scattering centers at the compensation element of 4% 810 . 840 and 8% 820 . 850 ,

The dependence of the color valence is for angle Phi with a value of 0 ° 800 . 810 . 820 and 70 ° 830 . 840 . 850 shown.

For the compensation elements with different mass fraction of scattering centers on the compensation element (0% 800 . 830 ; 4% - 810 . 840 ; 8th % - 820 . 850 ) and every angle Phi (0 ° - 800 . 810 . 820 ; 90 ° - 830 . 840 . 850 ) is the dependence of the color valence C _x 804 from the observation angle 802 in front 808 and after 806 the application of a compensation element shown.

The angle Phi describes the observation direction to an optoelectronic component, while the angle theta describes the observation angle with respect to the surface normal of the optoelectronic component.

The observation directions can be arranged perpendicular to the surface normal.

The observation directions for Phi equal to 0 ° and Phi equal to 90 ° are arranged perpendicular to one another, for example as axes of symmetry of the planar surface of an optoelectronic component.

In 800 and 830 It can be seen that the Winkelabhänigkeit the color location C _x is not inhomogeneous by the compensation element without scattering centers. If compensating elements with scattering centers are used, the angular dependence of the color locus can become more homogeneous. The higher the proportion of scattering centers, the more homogeneous the angular dependence of the color locus can be.

9 shows a schematic representation of a device 900 for individual bin adjustment 100 , according to various embodiments.

Several inorganic, optoelectronic components can by means of transport device 902 after or during the manufacture of the inorganic, optoelectronic components in the device 900 be transported.

The transport 902 The inorganic, optoelectronic components can be formed on a system carrier or after the separation of the inorganic, optoelectronic components.

One or more optoelectronic properties 104 . 106 . 108 . 110 The inorganic, optoelectronic components can in the measuring device 908 be determined.

From the measuring device 908 can be an information transport 910 the optoelectronic properties, ie the at least one measurement parameter to the selection device 912 be transmitted.

In an input device 914 can the optoelectronic properties of the target bins 102 , For example, in the form of an emission spectrum and the nature of the inorganic, optoelectronic devices, ie the degree of production, set or entered.

The degree of production can be, for example, information which layer was last applied to the inorganic optoelectronic component, for example the last applied layer is the second electrode 114 ,

The destination bin 102 and the degree of production can by means of information transport 916 to the selector 912 be transmitted.

In the selector 912 can by means of the process matrix 100 and the information from the measuring device 908 and the input device 914 the compensatory measures required for the inorganic, optoelectronic components 112 . 114 . 116 . 118 ie the balancing elements 112 . 114 . 116 . 118 and / or balancing processes 112 . 114 . 116 . 118 to be determined.

For example, determining the required compensation measures 112 . 114 . 116 . 118 , are realized by means of balancing the measured spectrum with the target spectrum, wherein the differences between the spectra are compared with the optoelectronic effect of known compensation measures.

The compensatory measures 112 . 114 . 116 . 118 In addition to the compensation process to be carried out or compensating layers to be applied, further information or process instructions may be included, for example inorganic or optoelectronic components, first separating or adhesive layer, for example adhesive, applied to the component surface or, for example, which substances should be kept in which quantity.

After determining the compensation measures 112 . 114 . 116 . 118 in the selector 912 can be an information flow 918 the compensatory measures 112 . 114 . 116 . 118 to the compensation device 920 to transfer.

In addition to the flow of information 918 to the equalizer 920 can the device 900 a transport 904 the inorganic, optoelectronic components from the measuring device 908 in the compensation device 920 exhibit.

In the equalizer 920 For example, the inorganic, optoelectronic components can initially be used in a singulation device 926 be isolated when the inorganic optoelectronic devices have a common system carrier and a separation should be necessary for the execution of the compensatory measures.

Separation may be necessary, for example, if multilevel adaptation measures are to be designed for some components and not for others, for example compensatory measures 114 . 116 ,

Another reason for separating the components may be incompatible countervailing measures 112 . 114 . 116 . 118 be, for example, the application of an adhesive layer 114 and then applying a leveling foil 116 as a multi-level compensatory measure, for example, incompatible with the compensatory measure applying a litter layer 112 and therefore a separate balancing 100 the inorganic, optoelectronic devices with the properties 104 . 106 to be necessary.

The compensation element 920 can furthermore have a separation of the inorganic, optoelectronic components if inorganic, optoelectronic components, optoelectronic properties 110 that already have the target properties 102 and therefore no compensatory measure is necessary.

Furthermore, the selection device 912 based on the process matrix 100 determine whether the inorganic optoelectronic components should be isolated and / or form logical groups, ie in which components the same or similar compensatory measures are formed and therefore can be processed together.

However, the singler may be optional, for example because components already isolated in the device 900 or a separation of the inorganic, optoelectronic components is not possible or not provided, for example in the case of several planar and / or coupled inorganic, optoelectronic components.

In the separating device 926 can the inorganic, optoelectronic devices with their individual compensation measures 112 . 114 . 116 . 118 according to the process matrix 100 be marked, for example, electronically, for example on a transport carrier or carriage on which the components within the compensation device 920 be transported or optically, for example by means of a bar code, at an edge region of the device that does not fulfill an optoelectronic task.

From the separating device 926 or from the measuring device 908 can be a transport 906 the inorganic, optoelectronic inorganic, optoelectronic components in the ident-sorting device 928 respectively.

Without singulation device 926 or isolation can the flow of information 918 and the transport 904 of the components directly into the ident-sorting device 928 be educated. Furthermore, can without singulation 926 , the individual marking of inorganic, optoelectronic components with their compensatory measures 112 . 114 . 116 . 118 in the ident-sorting facility 928 be formed.

In the ident-sorting facility 928 isolated inorganic optoelectronic components are identified by means of their markings and according to their compensatory measures 112 . 114 . 116 . 118 to the equalization facilities 930 . 932 . 934 transported ( 922 ) or if the optoelectronic properties 110 already the target bin 102 correspond, the inorganic, optoelectronic devices from the device 900 transported ( 936 ), ie the compensatory measures have been completed.

For non-isolated devices, the ident-sorting device may set the beginning of compensation for a device, i. Triggers.

A compensation system 930 can be a device for applying compensating layers, for example adhesive layer, litter layer, for example a chemical and / or physical vapor deposition system (chemical vapor deposition, physical vapor deposition, sputtering), a spray coater, a dip coater Spin coating, a squeegee or similar conventional process equipment. Based on the individual marking can in the equalization system 930 for compensation layers depending on the individual optoelectronic properties of the inorganic, optoelectronic components according to the process matrix 100 and specifying the selector 912 individual coating methods and / or substances and / or mixtures and / or process parameters, such as temperature, humidity, pressure, solvents, solution concentration, layer thicknesses, drying times, or similar, conventional parameters can be adjusted.

A compensation system 932 may be formed as a means for applying a fixed compensation element, for example a phosphor plate, for example by means of gluing or laminating.

A compensation system 934 may be used as a means for a balancing process, for example roughening or smoothing, for example chemical-mechanical polishing; Etching, for example wet-chemically by acids or physically by means of plasma, structuring, doping, plasma treatment of the exposed surface of the device, polymerizing, degrading or similar, conventional methods for the treatment of surface properties.

In one embodiment, the device 900 Part of a conventional manufacturing plant of inorganic, optoelectronic devices.

The equalization systems 930 . 932 . 934 may identify individual plants, for example, a single vapor deposition system, or a series of systems, for example, when gluing phosphor flakes, comprising a system for applying adhesive and a system for applying the phosphor laminae.

The device 900 can be another transport device 924 the components of the balancing devices 930 . 932 . 934 exhibit.

The devices may be transported out of the device (1424) if the optoelectronic properties of the devices correspond to the target bin.

However, the inorganic, optoelectronic components can also pass through the device again, for example for setting further optoelectronic properties, for example the brightness after setting the color. Several devices 900 can be connected in series or in the input device 914 can the target bin 102 and / or the degree of manufacturing of the components are changed manually or by means of a machine program. The transport 924 . 936 can then transport to a measuring device 908 be.

Further reasons for a re-run of the components after leaving the equalization systems 930 . 932 . 934 . 936 through the device 900 may be checking the optoelectronic properties, ie the compensatory measures can be verified, ie 924 . 936 can 902 correspond.

For multi-level compensation measures, for example 114 . 116 This can be done again by performing additional compensatory measures 116 after completion of the previous action 114 be, ie 924 can 902 . 904 . 906 or 922 correspond. When passing through the device 900 in a multi-stage process, ie when the multi-stage ( 114 . 116 ) Compensation measures are not formed in a compensation system, an information flow to the ident-sorting facility 928 from the equalization systems 930 . 932 . 934 and / or an information store in the ident-sorting device 928 necessary to update the status of the compensatory measure and coordinate the next compensatory measures.

Several of the transport devices 902 . 904 . 906 . 922 . 924 . 936 may be formed as a common transport device, such as a gripper arm or a conveyor belt. Several of the facilities 908 . 926 . 928 . 930 . 932 . 934 can also be designed as individual assemblies of a compact device, so that a transport 904 . 906 . 922 . 930 . 932 . 934 between the institutions is not necessary. Also do not have different or more balancing devices 930 . 932 . 934 be formed in the device. Leveling layers can already be prepared for example on films. Therefore, it is also possible to apply exclusively compensating films to the components, wherein several film classes are provided and corresponding to the process matrix 100 be applied to the components.

10 shows a schematic representation of a specific embodiment of the device for individual Binanpassung, according to various embodiments.

Shown is a measuring device 1002 with camera 1004 the inorganic, optoelectronic components (not visible) with different optoelectronic properties 104 . 114 . 108 Missing on a common system carrier. The measured values can be sent electronically to an automated coating system 930 For example, a pad printing system 930 (Pad-Printing 930 ), transmitted 910 become. The automated tampon printing system 930 can a computer 1002 comprising the input device 914 and selector 912 with process matrix 100 realized. By means of a gripping device 932 become individual compensation elements 112 . 116 . 118 according to the process matrix 100 one of the embodiments of the description of 1 applied to the inorganic, optoelectronic components. This allows a large number of optoelectronic components with the same color valence bin 102 will be realized.

The measurement of the color information can be carried out during the production (inline measurement) of the inorganic, optoelectronic components prior to the singulation (front end), while the application or lamination of the compensating elements 112 . 116 . 118 or after the separation of the inorganic, optoelectronic components (backend) can be performed.

In various embodiments, a method and a device for producing an inorganic optoelectronic component are provided with which it is possible to adapt inorganic optoelectronic components with different optoelectronic properties to a common optoelectronic target property. As a result, the production spread, i. the color and brightness scattering can be reduced in the production of the inorganic, optoelectronic components. Thus, the production can be better controlled and customer requests for specific color or brightness bins can be processed directly without major overproduction.

Claims (12)

Procedure ( 100 ) for producing an inorganic, optoelectronic component ( 202 ), the procedure ( 100 ) comprising: measuring at least one measuring parameter of an inorganic, optoelectronic component ( 202 ); and - processing the inorganic, optoelectronic component ( 202 ) taking into account the measured measured parameter value of the inorganic optoelectronic component ( 202 ), so that the optoelectronic properties ( 104 . 106 . 108 . 110 ) of the inorganic, optoelectronic component ( 202 ) to a given optoelectronic target property ( 102 ) is changed. Procedure ( 100 ) according to claim 1, wherein the measurable parameter has a measurement parameter with respect to emitted or absorbed electromagnetic radiation from the group of the measurement parameters: the brightness or the intensity; The wavelength spectrum or color valence; - the viewing angle dependence; - the absorption; or - the efficiency. Procedure ( 100 ) according to one of claims 1 or 2, wherein measuring the measuring parameter comprises measuring the optoelectronic properties ( 104 . 106 . 108 . 110 ) after or during the production of the optoelectronic component ( 202 ) having. Procedure ( 100 ) according to one of claims 1 to 3, wherein the processing of at least one value of a measuring parameter of the optoelectronic properties ( 104 . 106 . 108 . 110 ) of the inorganic. optoelectronic component ( 202 ) to the optoelectronic target property ( 102 ) by means of a compensation element ( 112 . 114 . 116 . 118 ) or a compensation process ( 112 . 114 . 116 . 118 ) is trained. Procedure ( 100 ) according to claim 4, wherein the compensating element ( 112 . 114 . 116 . 118 ) as a compensatory coating ( 112 . 114 . 116 . 118 ) is trained. Procedure ( 100 ) according to claim 5, wherein the compensating coating is formed such that the proportion of total reflected electromagnetic radiation in the optical path of the inorganic, optoelectronic component is reduced. Procedure ( 100 ) according to claim 5, wherein the compensating coating is formed such that the proportion of converted electromagnetic radiation in the optical path of the inorganic, optoelectronic component is increased, for example as a scattering layer. Procedure ( 100 ) according to claim 4, wherein the balancing process ( 112 . 114 . 116 . 118 ) is formed by means of a process ( 112 . 114 . 116 . 118 ) selected from the group of processes: - smoothing; - roughening; or - layer thickness reduction; - Structure. Procedure ( 100 ) according to one of claims 1 to 8, wherein the inorganic, optoelectronic component is designed as a radiation-emitting component, for example as an inorganic light-emitting diode. Procedure ( 100 ) according to one of claims 1 to 9, wherein the inorganic, optoelectronic component is formed as a radiation-detecting component. Contraption ( 900 ) for producing an inorganic, optoelectronic component, the device ( 900 ) comprising: - an input device ( 914 ) arranged for inputting at least one common optoelectronic target property ( 102 ) of the inorganic optoelectronic component; A measuring device ( 908 ) arranged for measuring at least one optoelectronic property of the inorganic, optoelectronic component and for transmitting ( 910 ) thereof to a selector ( 912 ); - a balancing device ( 920 ) arranged to provide at least two compensation elements ( 112 . 114 . 116 . 118 ) and / or balancing processes ( 112 . 114 . 116 . 118 ) with different optoelectronic effect with respect to the common target property ( 102 ) for the inorganic, optoelectronic component for selection by means of a selection device ( 912 ); - the selector ( 912 ), adapted for component-individual selection ( 100 ) at least one compensation element ( 112 . 114 . 116 . 118 ) and / or at least one compensation procedure ( 112 . 114 . 116 . 118 ) using the measured at least one optoelectronic properties ( 104 . 106 . 108 . 110 ) of the inorganic, optoelectronic components and the optoelectronic effect on the inorganic, optoelectronic component such that after applying the at least one selected compensating element ( 112 . 114 . 116 . 118 ) and / or the at least one selected compensation procedure ( 112 . 114 . 116 . 118 ) the optoelectronic properties ( 104 . 106 . 108 . 110 ) of the inorganic, optoelectronic component ( 202 ) to the target property ( 102 ) is changed. Contraption ( 900 ) according to claim 11, wherein the input device ( 914 ) for inputting the degree of production of the inorganic, optoelectronic component ( 202 ) is set up.

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