DE102012110382B4 - Substrate and method for manufacturing a substrate - Google Patents
Substrate and method for manufacturing a substrate Download PDFInfo
- Publication number
- DE102012110382B4 DE102012110382B4 DE102012110382.8A DE102012110382A DE102012110382B4 DE 102012110382 B4 DE102012110382 B4 DE 102012110382B4 DE 102012110382 A DE102012110382 A DE 102012110382A DE 102012110382 B4 DE102012110382 B4 DE 102012110382B4
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- Prior art keywords
- layer
- oxide
- metallization
- substrate
- solder stop
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 123
- 238000001465 metallisation Methods 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000011888 foil Substances 0.000 claims abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 20
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 19
- 238000005476 soldering Methods 0.000 claims description 19
- 238000013532 laser treatment Methods 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 150000004706 metal oxides Chemical class 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 238000004026 adhesive bonding Methods 0.000 claims description 8
- 239000005751 Copper oxide Substances 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 5
- 239000004917 carbon fiber Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 229920002430 Fibre-reinforced plastic Polymers 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000011151 fibre-reinforced plastic Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000002134 carbon nanofiber Substances 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 150000001879 copper Chemical class 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 176
- 230000008569 process Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09909—Special local insulating pattern, e.g. as dam around component
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Substrat, insbesondere in Form einer Leiterplatte für elektrische Schaltungen und/oder Module, mit wenigstens einer Isolierschicht (2), mit wenigstens einer Metallisierung (3, 4), vorzugsweise mit wenigstens einer zumindest teilweise von einer Metallschicht oder Metallfolie gebildeten Metallisierung, sowie mit wenigstens einer einen an der Metallisierung (3, 4) und/oder an einer Oberflächen- oder Abschlussschicht (9) gebildeten Bondbereich (6) begrenzenden Lötstoppstruktur (5), wobei die Lötstoppstruktur (5) von einem metallischen Oxid, vorzugsweise von einem metallischen Oxid der Metallisierung (3, 4) und/oder von einem metallischen Oxid der auf die Metallisierung aufgebrachten Oberflächen- oder Abschlussschicht (9) gebildet ist und das Oxid oder die Oxidschicht ohne Materialabtrag erzeugt ist, dadurch gekennzeichnet, dass die Lötstoppstruktur (5) über das Niveau der benachbarten frei liegenden Außenfläche der Metallisierung (3, 4) oder der Oberflächen- oder Abschlussschicht (9) vorsteht.Substrate, in particular in the form of a printed circuit board for electrical circuits and / or modules, with at least one insulating layer (2), with at least one metallization (3, 4), preferably with at least one metallization formed at least partially by a metal layer or metal foil, and with at least a solder stop structure (5) delimiting a bond area (6) formed on the metallization (3, 4) and / or on a surface or final layer (9), the solder stop structure (5) being made of a metallic oxide, preferably a metallic oxide of the Metallization (3, 4) and / or a metallic oxide of the surface or final layer (9) applied to the metallization and the oxide or oxide layer is produced without material removal, characterized in that the solder stop structure (5) over the level protruding from the adjacent exposed outer surface of the metallization (3, 4) or the surface or final layer (9) eht.
Description
Die Erfindung bezieht sich auf ein Substrat, insbesondere in Form einer Leiterplatte, gemäß Oberbegriff Patentanspruch 1 sowie auf ein Verfahren zum Herstellen eines Substrates, insbesondere in Form einer Leiterplatte, gemäß Oberbegriff Patentanspruch 10.The invention relates to a substrate, in particular in the form of a printed circuit board, according to the preamble of
Substrate in Form von Leiterplatten bestehend aus einer Isolierschicht aus einem polymeren Material und/oder aus Keramik, aus wenigstens einer mit einer Oberflächenseite der Isolierschicht verbundenen und zur Ausbildung von Leiterbahnen, Kontakten, Kontakt- oder Befestigungsbereichen strukturierten Metallisierung sind in verschiedensten Ausführungen bekannt. Bekannt ist hierbei auch, solche Bereiche der Metallisierung (nachstehend als Löt- oder Bondbereiche bezeichnet), die für eine Verbindung von Anschlussleitungen, Schaltungs- oder Modulkomponenten usw., insbesondere auch für eine Verbindung von elektrischen Bauteilen und/oder deren Anschlüsse durch eine Löten vorgesehen sind, seitlich mit einer, eine Barriere für das flüssige Lot bildenden Lötstoppstruktur zu versehen. Üblicherweise bestehen diese Lötstoppstrukturen aus einem Auftrag oder aus einer Schicht aus einem polymeren und/oder anorganischen Material und müssen in einem relativ aufwendigen Verfahren aufgebracht werden. Nachteilig ist hierbei insbesondere, dass für das Aufbringen der bekannten Lötstoppstrukturen mehrere zusätzliche Verfahrensschritte erforderlich sind, dass die bekannten Lötstoppstrukturen bei Verwendung eines polymeren Materials eine nur geringe Temperaturbeständigkeit aufweisen und bei Verwendung eines anorganischen Materials ein zusätzlicher, die Herstellungskosten des Substrates verteuernder Einbrennschritt erforderlich ist, der in der Regel auch einen speziellen Ofen erfordert. Weiterhin enthalten die für Lötstoppstrukturen verwendeten bekannten Lacke oder Paste grundsätzlich Lösungsmittel, die insbesondere auch beim Einbrennen verdampfen und eine Belastung der Umwelt darstellen. Weiterhin ist die Einhaltung eines gewünschten Layouts für die jeweilige Lötstoppstruktur vielfach schwierig und die angestrebte Qualität der Haftung der Lötstoppstruktur auf dem Substrat wird vielfach nicht erreicht.Substrates in the form of printed circuit boards consisting of an insulating layer made of a polymeric material and / or ceramic, of at least one metallization connected to one surface side of the insulating layer and structured to form conductor tracks, contacts, contact or fastening areas are known in various designs. Also known here are those areas of the metallization (hereinafter referred to as soldering or bonding areas) that are provided for connecting connecting lines, circuit or module components, etc., in particular also for connecting electrical components and / or their connections by soldering are to be provided on the side with a solder stop structure that forms a barrier for the liquid solder. These solder stop structures usually consist of an application or a layer made of a polymeric and / or inorganic material and have to be applied in a relatively complex process. The particular disadvantage here is that several additional process steps are required for the application of the known solder stop structures, that the known solder stop structures have only a low temperature resistance when using a polymeric material, and when using an inorganic material an additional baking step is required which increases the manufacturing costs of the substrate, which usually also requires a special oven. Furthermore, the known lacquers or pastes used for solder stop structures basically contain solvents which, in particular, also evaporate during stoving and represent a burden on the environment. Furthermore, maintaining a desired layout for the respective solder stop structure is often difficult and the desired quality of adhesion of the solder stop structure to the substrate is often not achieved.
Bekannt sind auch Verfahren zum Herstellen von Substraten in Form einer Leiterplatten für elektrische Schaltungen und/oder Module (
Bekannt ist weiterhin das sogenannten „DCB-Verfahrens“ (Direct-Copper-Bond-Technology) beispielsweise zum Verbinden von Metallschichten oder -blechen (z. B. Kupferblechen oder -folien) mit einander und/oder mit Keramik oder Keramikschichten, und zwar unter Verwendung von Metall- bzw. Kupferblechen oder Metall- bzw. Kupferfolien, die an ihren Oberflächenseiten eine Schicht oder einen Überzug (Aufschmelzschicht) aus einer chemischen Verbindung aus dem Metall und einem reaktiven Gas, bevorzugt Sauerstoff aufweisen. Bei diesem beispielsweise in der
Dieses DCB-Verfahren weist dann z. B. folgende Verfahrensschritte auf:
- • Oxidieren einer Kupferfolie derart, dass sich eine gleichmäßige Kupferoxidschicht ergibt;
- • Auflegen des Kupferfolie auf die Keramikschicht;
- • Erhitzen des Verbundes auf eine Prozesstemperatur zwischen etwa 1025 bis 1083°C, z. B. auf ca. 1071°C;
- • Abkühlen auf Raumtemperatur.
- • Oxidizing a copper foil in such a way that a uniform copper oxide layer results;
- • Placing the copper foil on the ceramic layer;
- • Heating the composite to a process temperature between about 1025 to 1083 ° C, z. B. to about 1071 ° C;
- • Cooling down to room temperature.
Bekannt ist weiterhin das sogenannte Aktivlot-Verfahren (
Aus der ist ein Verfahren zur Erzeugung einer Lötstoppbarriere unter Einbringung von Energie auf der Oberfläche eines Trägers, um die Benetzbarkeit dieser Oberfläche mit flüssigen Lot im bestrahlen Bereich zu reduzieren. Diese Reaktion betrifft eine Oxidation von an der Oberfläche befindlichen Trägermaterial im Bereich von der mit einem Laserstrahl erzeugten Spur bzw. Lötstoppspur.From FIG. 4 there is a method for producing a solder stop barrier with the introduction of energy on the surface of a carrier in order to reduce the wettability of this surface with liquid solder in the irradiated area. This reaction concerns an oxidation of the carrier material located on the surface in the area of the track or solder stop track generated with a laser beam.
Die
Die
Die
Die
Der Erfindung liegt die Aufgabe zugrunde, ein Substrat aufzuzeigen, welches die vorgenannten Nachteile vermeidet und bei dem die jeweilige Lötstoppstruktur zeitsparend und kostengünstig hergestellt ist. Zur Lösung dieser Aufgabe ist ein Substrat entsprechend dem Patentanspruch 1 ausgebildet. Ein Verfahren zum Herstellen des Substrates ist Gegenstand des Patentanspruchs 10.The invention is based on the object of providing a substrate which avoids the aforementioned disadvantages and in which the respective solder stop structure is produced in a time-saving and cost-effective manner. To achieve this object, a substrate is designed in accordance with
Der besondere Vorteil der Erfindung besteht u. a. darin, dass die jeweilige Lötstoppstruktur bzw. das jeweilige Lötstoppmuster ohne aufwendige Verfahrensschritte, ohne zusätzliche Arbeitsmittel und ohne Umweltbelastung hergestellt werden kann, und zwar mit einer optimalen Haftung der Lötstoppstruktur an dem jeweiligen Substrat bzw. der Metallisierung. Weiterhin kann die Lötstoppstruktur durch Steuerung der Relativbewegung zwischen dem Substrat und dem Laserstrahl problemlos und beispielsweise programm- und/oder computergesteuert in dem gewünschten Layout erzeugt werden, insbesondere auch in einer feinen und differenzierten Form. Lösungsmittel und die damit verbundene Umweltbelastung werden mit der Erfindung vermieden.The particular advantage of the invention consists inter alia. in that the respective solder stop structure or the respective solder stop pattern can be produced without complex process steps, without additional work equipment and without environmental pollution, namely with an optimal adhesion of the solder stop structure to the respective substrate or the metallization. Furthermore, by controlling the relative movement between the substrate and the laser beam, the solder stop structure can be produced in the desired layout without problems and, for example, under program and / or computer control, in particular also in a fine and differentiated form. Solvents and the associated pollution are avoided with the invention.
Die Erzeugung des die Lötstoppstruktur bildenden Metalloxids erfolgt bevorzugt derart, dass das Metalloxid zumindest bis an das Niveau einer angrenzenden freiliegenden Metallfläche reicht, bevorzugt über dieses Niveau vorsteht. Die Hitzeeinwirkung (z. B. Lasern) erfolgt auf jeden Fall so, dass kein Materialabtrag oder im Wesentlichen kein Materialabtrag (z. B. durch Verdampfen), weder am Substrat bzw. an der Isolierschicht, noch an der jeweiligen Metallisierung erfolgt. Dies gilt auch dann, wenn die Metallisierung zusätzlich mit wenigstens einer äußeren metallischen Abschlussschicht versehen ist, d. h. die Metallisierung beispielsweise aus Kupfer oder Aluminium besteht und als Abschlussschicht mit eine Nickelschicht oder mit einer Nickelschicht und einer äußerer Goldschicht versehen ist. In Um dies zu erreichen und einen Materialabtrag bzw. Metallabtrag (z. B. durch Verdampfen) zu vermeiden, ist es erforderlich, dass die Hitzebehandlung (z. B. Lasern) in einer Atmosphäre erfolgt, deren Sauerstoffgehalt nicht unter 10% liegt. Im Falle einer Abschlussschicht aus Nickel ist das die Lötstoppstruktur bildende Metalloxids u. a. Nickeloxid. Dies gilt auch im Falle einer Abschlussschicht aus innen liegender, bzw. an die Metallisierung angrenzender Nickelschicht und äußerer Goldschicht, wobei das Nickel hierbei durch die Goldschicht diffundiert. Bevorzugt ist die Hitzeeinwirkung (z. B. Lasern) für die Erzeugung der Lötstoppstruktur so eingestellt, dass bei einer Abschlussschicht nur oder im Wesentlichen deren Oxid die Lötstoppstruktur bildet.The metal oxide forming the solder stop structure is preferably produced in such a way that the metal oxide extends at least up to the level of an adjacent exposed metal surface, preferably protrudes above this level. The effect of heat (e.g. lasers) takes place in any case in such a way that there is no material removal or essentially no material removal (e.g. by evaporation), neither on the substrate or on the insulating layer, nor on the respective metallization. This also applies if the metallization is additionally provided with at least one outer metallic finishing layer, i.e. H. the metallization consists for example of copper or aluminum and is provided with a nickel layer or with a nickel layer and an outer gold layer as the final layer. In order to achieve this and to avoid material removal or metal removal (e.g. by evaporation), it is necessary that the heat treatment (e.g. laser) takes place in an atmosphere with an oxygen content not below 10%. In the case of a final layer made of nickel, the metal oxide forming the solder stop structure is inter alia. Nickel oxide. This also applies in the case of a final layer composed of an inner nickel layer or an outer gold layer adjacent to the metallization, the nickel here diffusing through the gold layer. The action of heat (for example lasers) for generating the solder stop structure is preferably set in such a way that, in the case of a final layer, only or essentially its oxide forms the solder stop structure.
Bei einer besonderen Ausführungsform ist das jeweilige Substrat Bestandteil eines als Mehrfachnutzen hergestellten Mehrfachsubstrates, bei dem auf einer großformatigen Isolierschicht mehrere Einzelsubstrate bzw. deren Metallisierungen durch Strukturieren von auf die Isolierschicht aufgebrachten Metallschichten oder Metallfolien erzeugt sind, wie dies beispielsweise in der
In Weiterbildung der Erfindung ist das Substrat beispielsweise auch so ausgebildet,
dass die wenigstens eine Metallisierung zumindest teilweise von einer Kupferschicht, vorzugsweise von einer Kupferschicht mit einer Dicke im Bereich zwischen 0,015 mm bis 0,8 mm und die Oxidschicht von einem Kupferoxid, vorzugsweise mit einer Dicke im Bereich zwischen 0,00015 mm bis 0,1 mm gebildet sind, und/oder
dass die wenigstens eine Metallisierung zumindest teilweise von einer Schicht aus Aluminium, vorzugsweise mit einer Dicke im Bereich zwischen 0,015 mm bis 0,8 mm und die Oxidschicht von Aluminiumoxid, vorzugsweise mit einer Dicke im Bereich zwischen 0,005 mm bis 0,1 mm gebildet sind,
und/oder
dass die wenigstens eine Metallisierung wenigstens zweilagig mit einer an die Isolierschicht anschließenden Kupfer- oder Aluminiumschicht sowie mit einer zumindest einlagigen, vorzugsweise dünnen Oberflächen- oder Abschlussschicht an der der Isolierschicht abgewandten Oberflächenseite der Kupfer- oder Aluminiumschicht ausgeführt ist,
und/oder
dass die Oberflächen- oder Abschlussschicht eine Nickelschicht ist, vorzugsweise mit einer Dicke im Bereich zwischen 0,002 mm und 0,015 mm,
und/oder
dass die Oberflächen- oder Abschlussschicht eine Schicht aus Silber ist, vorzugsweise mit einer Schichtdicke im Bereich zwischen 0,00015 mm und 0,05 mm, und/oder
dass die Oberflächen- oder Abschlussschicht eine Schicht aus Gold ist, beispielsweise mit einer Schichtdicke im Bereich zwischen 0,0001 mm und 0,015 mm,
und/oder
dass die Oberflächen- oder Abschlussschicht eine Schicht aus Silber oder Gold ist mit einer Schichtdicke im Bereich zwischen 0,01 µm und 3 µm,
und/oder
dass die Oberflächen- oder Abschlussschicht mehrlagig ausgeführt ist und wenigstens aus der an die Kupfer- oder Aluminiumschicht anschließenden Nickelschicht und aus der Silber- und/oder Goldschicht besteht, die an die der Isolierschicht abgewandten Seite der Nickelschicht anschließt,
und/oder
dass die die Lötstoppstruktur bildende Oxidschicht im Wesentlichen aus Nickeloxid besteht,
und/oder
dass die die Lötstoppstruktur bildende Oxidschicht zumindest bis an das Niveau der Außenfläche der Metallisierung oder der Oberflächen- oder Abschlussschicht reicht, vorzugsweise über dieses Niveau vorsteht,
und/oder
dass die die Lötstoppstruktur bildende Oxidschicht eine Schichtdicke im Bereich zwischen 0,0001 mm und 0,015 mm aufweist,
und/oder
dass die Lötstoppstruktur den wenigstens einen Löt- oder Bondbereich umschließt,
und/oder
dass die Lötstoppstruktur eine Breite im Bereich zwischen 0,1 mm und 1,2 mm aufweist,
und/oder
dass die Isolierschicht aus Kunststoff, beispielsweise aus faserverstärktem Kunststoff besteht,
und/oder
dass die Isolierschicht aus Kunststoff, beispielsweise aus faserverstärktem Kunststoff besteht und eine Dicke im Bereich zwischen 0,015 mm und 3,0 mm aufweist, und/oder
dass die Isolierschicht eine Keramikschicht, vorzugsweise aus Aluminiumoxid, Aluminiumnitrid, Siliziumnitrid oder Aluminiumoxid mit Zirkonoxid ist,
und/oder
dass die Isolierschicht eine Keramikschicht, vorzugsweise aus Aluminiumoxid, Aluminiumnitrid, Siliziumnitrid oder Mischkeramik aus Aluminiumoxid mit Zirkonoxid, beispielsweise aus Aluminiumoxid mit 1 Gew.-% bis 23 Gew.-% Zirkonoxid ist und eine Dicke im Bereich zwischen 0,15 mm und 1,5 mm aufweist,
und/oder
dass die wenigstens eine Metallisierung durch Kleben oder Aktivlöten oder DCB-Bonden mit der Isolierschicht verbunden ist,
und/oder
dass auf den wenigstens einen Bond- oder Lötbereich eine Lotschicht aufgebracht ist,
und/oder
dass auf den wenigstens einen Bond- oder Lötbereich eine Lotschicht aufgebracht ist und über die Lötschicht ein Bauteil (
wobei die vorgenannten Merkmale jeweils einzeln oder in beliebiger Kombination verwendet sein können.In a further development of the invention, the substrate is also designed, for example,
that the at least one metallization at least partially from a copper layer, preferably from a copper layer with a thickness in the range between 0.015 mm to 0.8 mm and the oxide layer from a copper oxide, preferably with a thickness in Area between 0.00015 mm to 0.1 mm are formed, and / or
that the at least one metallization is at least partially formed by a layer of aluminum, preferably with a thickness in the range between 0.015 mm to 0.8 mm and the oxide layer of aluminum oxide, preferably with a thickness in the range between 0.005 mm to 0.1 mm,
and or
that the at least one metallization is designed in at least two layers with a copper or aluminum layer adjoining the insulating layer and with an at least one-layer, preferably thin surface or final layer on the surface side of the copper or aluminum layer facing away from the insulating layer,
and or
that the surface or final layer is a nickel layer, preferably with a thickness in the range between 0.002 mm and 0.015 mm,
and or
that the surface or final layer is a layer of silver, preferably with a layer thickness in the range between 0.00015 mm and 0.05 mm, and / or
that the surface or final layer is a layer made of gold, for example with a layer thickness in the range between 0.0001 mm and 0.015 mm,
and or
that the surface or final layer is a layer of silver or gold with a layer thickness in the range between 0.01 µm and 3 µm,
and or
that the surface or final layer is multilayered and consists of at least the nickel layer adjoining the copper or aluminum layer and the silver and / or gold layer adjoining the side of the nickel layer facing away from the insulating layer,
and or
that the oxide layer forming the solder stop structure consists essentially of nickel oxide,
and or
that the oxide layer forming the solder stop structure extends at least to the level of the outer surface of the metallization or the surface or final layer, preferably protrudes beyond this level,
and or
that the oxide layer forming the solder stop structure has a layer thickness in the range between 0.0001 mm and 0.015 mm,
and or
that the solder stop structure encloses the at least one soldering or bonding area,
and or
that the solder stop structure has a width in the range between 0.1 mm and 1.2 mm,
and or
that the insulating layer is made of plastic, for example fiber-reinforced plastic,
and or
that the insulating layer is made of plastic, for example fiber-reinforced plastic and has a thickness in the range between 0.015 mm and 3.0 mm, and / or
that the insulating layer is a ceramic layer, preferably made of aluminum oxide, aluminum nitride, silicon nitride or aluminum oxide with zirconium oxide,
and or
that the insulating layer is a ceramic layer, preferably made of aluminum oxide, aluminum nitride, silicon nitride or mixed ceramics made of aluminum oxide with zirconium oxide, for example aluminum oxide with 1% by weight to 23% by weight of zirconium oxide and a thickness in the range between 0.15 mm and 1, 5 mm,
and or
that the at least one metallization is connected to the insulating layer by gluing or active soldering or DCB bonding,
and or
that a solder layer is applied to the at least one bonding or soldering area,
and or
that a solder layer is applied to the at least one bonding or soldering area and a component (
it being possible for the aforementioned features to be used individually or in any combination.
In Weiterbildung der Erfindung ist das Verfahren u. a. beispielsweise so ausgebildet,
dass die partielle Umwandlung des Metalls der wenigstens einen Metallisierung in das die Lötstoppstruktur bildende Oxid durch Wärmeeintrag und/oder durch chemische Oxidation erfolgt,
und/oder
dass die partielle Umwandlung des Metalls der wenigstens einen Metallisierung in das die Lötstoppstruktur (
und/oder
dass die partielle Umwandlung des Metalls der wenigstens einen Metallisierung in das die Lötstoppstruktur (
und/oder
dass die partielle Umwandlung des Metalls in das die Lötstoppstruktur bildende Oxid in einer sauerstoffhaltigen Atmosphäre mit einem Sauerstoffanteil von wenigstens 10%, beispielsweise in einer sauerstoffhaltigen Atmosphäre mit einem Sauerstoffanteil zwischen 21% und 99% erfolgt,
und/oder
dass die Laserbehandlung über eine Maske erfolgt,
und/oder
dass die Laserbehandlung durch Relativbewegung zwischen einem Laserstrahl und dem Substrat in Richtung des Verlaufs der Lötstoppstruktur sowie auch durch eine kreisende und/oder oszillierende Relativbewegung, insbesondere durch eine oszillierende Relativbewegung quer zum Verlauf der Lötstoppstruktur erfolgt, und/oder
dass die partielle Umwandlung des Metalls in das die Lötstoppstruktur bildende Oxid derart erfolgt, dass die die Lötstoppstruktur bildende Oxidschicht zumindest bis an das Niveau der Außenfläche der Metallisierung oder der Oberflächen- oder Abschlussschicht reicht, vorzugsweise über dieses Niveau vorsteht,
und/oder
dass die partielle Umwandlung des Metalls der wenigstens einen Metallisierung in das die Lötstoppstruktur bildende Oxid nach dem Aufbringen einer wenigstens einlagigen metallischen Oberflächen- oder Abschlussschicht auf eine mit der Isolierschicht verbundene Metallschicht, beispielsweise aus Kupfer oder Aluminium erfolgt,
und/oder
dass die partielle Umwandlung des Metalls der wenigstens einen Metallisierung in das die Lötstoppstruktur bildende Oxid derart erfolgt, dass die die Lötstoppstruktur bildende Oxidschicht nur oder im Wesentlichen nur von wenigsten einem Metall der Oberflächen- oder Abschlussschicht gebildet ist,
und/oder
dass die Oberflächen- oder Abschlussschicht oder zumindest eine Teilschicht dieser Oberflächen- oder Abschlussschicht aus Nickel, Gold, Silber oder Nickel-, Gold-, Silber-Legierungen besteht,
und/oder
dass bei einer wenigstens zweilagigen Ausbildung der Oberflächen- oder Abschlussschicht (
dass bei einer Isolierschicht aus Keramik, beispielsweise aus Aluminiumoxid, Aluminiumnitrid, Siliziumnitrid oder Aluminiumoxid mit Zirkonoxid, die wenigstens eine aus Kupfer oder Aluminium bestehende Metallisierung durch DCB-Bonden oder Aktivlöten oder durch Kleben, vorzugsweise durch Kleben mit einem Carbon-Fasern oder Carbon-Nanofasern enthaltenden Kleber mit der Isolierschicht verbunden wird,
und/oder
dass bei einer Isolierschicht aus einem polymeren Material die wenigstens eine Metallisierung mit der Isolierschicht durch Kleben, vorzugsweise mit einem polymeren Kleber, z. B. mit einem polymeren Carbon-Fasern- und/oder Carbon-Nofasern enthaltenden Kleber verbunden wird,
und/oder
dass die partielle Umwandlung des Metalls in das die Lötstoppstruktur bildende Metalloxid unter Verwendung einer Maske erfolgt,
und/oder
dass die partielle Umwandlung des Metalls in das die Lötstoppstruktur bildende Metalloxid unter Verwendung einer Maske durch chemische oder nasschemische Oxidation über die Maske erfolgt,
und/oder
dass auf den wenigstens einen Bond- oder Lötbereich nach dem Erzeugen der Lötstoppstruktur eine Lötschicht aufgebracht wird,
und/oder
dass wenigstens ein elektrisches Bauelement (
und/oder
dass bei einer Herstellung der Substrate in einem Mehrfachnutzen oder in einem Mehrfachsubstrat und beim Trennen des Mehrfachsubstrates in die Substrate oder beim Einbringen von Trenn- oder Sollbruchlinien in der Isolierschicht zwischen den Substraten durch Laserbehandlung in diesem Verfahrensschritt oder zumindest mit demselben Laser auch die Lötstoppstrukturen oder Lötstoppmuster erzeugt werden,
wobei die vorgenannten Merkmale jeweils einzeln oder in beliebiger Kombination verwendet sein können.In a further development of the invention, the method is designed, for example, so
that the partial conversion of the metal of the at least one metallization into the oxide forming the solder stop structure takes place through the introduction of heat and / or through chemical oxidation,
and or
that the partial conversion of the metal of the at least one metallization into that of the solder stop structure (
and or
that the partial conversion of the metal of the at least one metallization into that of the solder stop structure (
and or
that the partial conversion of the metal into the oxide forming the solder stop structure takes place in an oxygen-containing atmosphere with an oxygen content of at least 10%, for example in an oxygen-containing atmosphere with an oxygen content between 21% and 99%,
and or
that the laser treatment is carried out through a mask,
and or
that the laser treatment is carried out by a relative movement between a laser beam and the substrate in the direction of the course of the solder stop structure and also by a circular and / or oscillating relative movement, in particular by an oscillating relative movement transverse to the course of the solder stop structure, and / or
that the partial conversion of the metal into the oxide forming the solder stop structure takes place in such a way that the oxide layer forming the solder stop structure extends at least to the level of the outer surface of the metallization or the surface or final layer, preferably protrudes above this level,
and or
that the partial conversion of the metal of the at least one metallization into the oxide forming the solder stop structure takes place after the application of an at least one-layer metallic surface or final layer to a metal layer connected to the insulating layer, for example made of copper or aluminum,
and or
that the partial conversion of the metal of the at least one metallization into the oxide forming the solder stop structure takes place in such a way that the oxide layer forming the solder stop structure is formed only or essentially by at least one metal of the surface or final layer,
and or
that the surface or final layer or at least a partial layer of this surface or final layer consists of nickel, gold, silver or nickel, gold, silver alloys,
and or
that with an at least two-layer formation of the surface or final layer (
that with an insulating layer made of ceramic, for example made of aluminum oxide, aluminum nitride, silicon nitride or aluminum oxide with zirconium oxide, the at least one metallization consisting of copper or aluminum by DCB bonding or active soldering or by gluing, preferably by gluing with a carbon fiber or carbon nanofiber containing adhesive is connected to the insulating layer,
and or
that in the case of an insulating layer made of a polymeric material, the at least one metallization with the insulating layer by gluing, preferably with a polymeric adhesive, e.g. B. is connected with an adhesive containing polymeric carbon fibers and / or carbon nofibers,
and or
that the partial conversion of the metal into the metal oxide forming the solder stop structure takes place using a mask,
and or
that the partial conversion of the metal into the metal oxide forming the solder stop structure is carried out using a mask by chemical or wet-chemical oxidation over the mask,
and or
that a solder layer is applied to the at least one bonding or soldering area after the solder stop structure has been produced,
and or
that at least one electrical component (
and or
that when manufacturing the substrates in a multiple use or in a multiple substrate and when separating the multiple substrate into the substrates or when introducing separating or predetermined breaking lines in the insulating layer between the substrates by laser treatment in this process step or at least with the same laser, also the solder stop structures or solder stop patterns be generated,
it being possible for the aforementioned features to be used individually or in any combination.
Der Ausdruck „ohne Materialabtrag“ bedeutet im Sinne der Erfindung, dass bei Erzeugen des die Lötstoppstruktur bildenden Metall-Oxids kein Material oder im Wesentlichen kein Material beispielsweise durch Verdampfen entfernt wird.In the context of the invention, the expression “without material removal” means that no material or essentially no material is removed, for example by evaporation, when the metal oxide forming the solder stop structure is generated.
Der Ausdruck „im Wesentlichen“ bzw. „etwa“ bedeutet im Sinne der Erfindung Abweichungen vom jeweils exakten Wert um +/-10%, bevorzugt um +/-5% und/oder Abweichungen in Form von für die Funktion unbedeutenden Änderungen.The expression “essentially” or “approximately” means deviations from the exact value of +/- 10%, preferably +/- 5% and / or deviations in the form of changes that are insignificant for the function.
Weiterbildungen, Vorteile und Anwendungsmöglichkeiten der Erfindung ergeben sich auch aus der nachfolgenden Beschreibung von Ausführungsbeispielen und aus den Figuren. Dabei sind alle beschriebenen und/oder bildlich dargestellten Merkmale für sich oder in beliebiger Kombination grundsätzlich Gegenstand der Erfindung, unabhängig von ihrer Zusammenfassung in den Ansprüchen oder deren Rückbeziehung. Auch wird der Inhalt der Ansprüche zu einem Bestandteil der Beschreibung gemacht.Developments, advantages and possible applications of the invention also emerge from the following description of exemplary embodiments and from the figures. In this case, all of the features described and / or shown in the figures, individually or in any combination, are fundamentally the subject matter of the invention, regardless of how they are summarized in the claims or their reference. The content of the claims is also made part of the description.
Die Erfindung wird im Folgenden anhand der Figuren an Ausführungsbeispielen näher erläutert.The invention is explained in more detail below with reference to the figures using exemplary embodiments.
Es zeigen:
-
1-3 verschiedene Verfahrensschritte zur Herstellung eines weiteren Substrates gemäß der Erfindung, wobei das Substrat sowie die verschiedenen, dieses Substrat bildenden Schichten in vereinfachter Schnittdarstellung wiedergegeben sind; -
4 in vereinfachter Darstellung eine Draufsicht auf das nach den1-3 hergestellte Substrat; -
5 eine vergrößerte Schnittdarstellung desSubstrates der 3 und4 im Bereich des Lötstoppmusters; -
6 und7 eine Darstellung wie 5 , jedoch mit Lotschicht und aufgelötetem Bauelement; -
8-11 verschiedene Verfahrensschritte zur Herstellung eines weiteren Substrates gemäß der Erfindung, wobei das Substrat sowie die verschiedenen, dieses Substrat bildenden Schichten wiederum in vereinfachter Schnittdarstellung wiedergegeben sind; -
12 eine Draufsicht auf das entsprechend den8-11 hergestellte Substrat; -
13 eine vergrößerte Schnittdarstellung desSubstrates der 11 und12 im Bereich des Lötstoppmusters, zusammen mit der Lotschicht; -
14-18 verschiedene Verfahrensschritte zur Herstellung eines weiteren Substrates gemäß der Erfindung, wobei das Substrat sowie die verschiedenen, dieses Substrat bildenden Schichten wiederum in vereinfachter Schnittdarstellung wiedergegeben sind; -
19 eine Draufsicht auf das nach den14-18 hergestellte Substrat; -
20 in vergrößerter Schnittdarstellung das Substrat der18 und19 im Bereich des Lötstoppmusters; -
21 in schematischer Darstellung ein Verfahren zum Erzeugen des Lötstoppmusters unter Verwendung einer Maske.
-
1-3 various process steps for the production of a further substrate according to the invention, the substrate and the various layers forming this substrate being shown in a simplified sectional illustration; -
4th in a simplified representation a plan view of the after1-3 manufactured substrate; -
5 an enlarged sectional view of the substrate of FIG3 and4th in the area of the solder stop pattern; -
6th and7th a representation like5 , but with solder layer and soldered component; -
8-11 various method steps for producing a further substrate according to the invention, the substrate and the various layers forming this substrate again being shown in a simplified sectional illustration; -
12 a plan view of the corresponding to8-11 manufactured substrate; -
13 an enlarged sectional view of the substrate of FIG11 and12 in the area of the solder stop pattern, together with the solder layer; -
14-18 various method steps for producing a further substrate according to the invention, the substrate and the various layers forming this substrate again being shown in a simplified sectional illustration; -
19th a top view of the after14-18 manufactured substrate; -
20th in an enlarged sectional view the substrate of18th and19th in the area of the solder stop pattern; -
21st a schematic representation of a method for generating the solder mask using a mask.
Das in den
Entsprechend den
Wird der Hitzeeintrag zur Bildung des Lötstoppmusters
Für das Aufbringen des Lötstoppmusters eignet sich insbesondere eine Laserbehandlung mit einem YAG-Laser oder CO2-Laser oder Eximer-Laser, beispielsweise mit einem YAG-Laser mit einer Leistung zwischen 30 W und 100 W, mit einem CO2-Laser mit einer Leistung zwischen 50 W und 300 W oder mit einem Eximer-Laser mit einer Leistung zwischen 30 W und 150 W. Die Laserbehandlung erfolgt durch direkte Bestrahlung des Metallbereichs
Die Metallisierungen
Die Isolierschicht
Für die Isolierschicht
U. a. unter Berücksichtigung der für die Isolierschicht
Besteht die Isolierschicht
Zur Fertigstellung des Substrates
Für die Oberflächen- oder Abschlussschicht
Durch die Oberflächenbeschichtung
Die
Das Verbinden und dabei insbesondere das elektrische Verbinden der wiederum als Leiterplatten verwendeten Substrat
Ist die Oberflächenbeschichtung
Wie vorstehend erwähnt, erfolgt die Erzeugung des Lötstoppmusters
Die Erfindung wurde voranstehend an Ausführungsbeispielen beschrieben. Es versteht sich, dass zahlreiche Änderungen sowie Abwandlungen möglich sind, ohne dass dadurch der der Erfindung zugrunde liegend Erfindungsgedanke verlassen wird.The invention was described above using exemplary embodiments. It goes without saying that numerous changes and modifications are possible without departing from the inventive concept on which the invention is based.
So wurde vorstehend davon ausgegangen, dass die Lötstoppmuster
Vorstehend wurde davon ausgegangen, dass die Metallisierungen
Durch ein mehrmaliges, beispielsweise zweimaliges Abfahren des Lötstoppmusters
Wird das Substrat
Claims (19)
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DE102011056768.2 | 2011-12-21 | ||
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EP2966677A1 (en) * | 2014-07-07 | 2016-01-13 | Nxp B.V. | Method of attaching electronic components by soldering with removal of substrate oxide coating using a flux, corresponding substrate and corresponding flip-chip component |
CN108374170B (en) * | 2016-12-20 | 2019-07-09 | 中国航空制造技术研究院 | A kind of coating method of only solder flux |
EP4053886A1 (en) * | 2021-03-01 | 2022-09-07 | Infineon Technologies AG | Method for fabricating a substrate with a solder stop structure, substrate with a solder stop structure and electronic device |
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