DE102011054997A8 - Sense amplifier with negative capacitance circuit and device with the same - Google Patents

Sense amplifier with negative capacitance circuit and device with the same Download PDF

Info

Publication number
DE102011054997A8
DE102011054997A8 DE102011054997A DE102011054997A DE102011054997A8 DE 102011054997 A8 DE102011054997 A8 DE 102011054997A8 DE 102011054997 A DE102011054997 A DE 102011054997A DE 102011054997 A DE102011054997 A DE 102011054997A DE 102011054997 A8 DE102011054997 A8 DE 102011054997A8
Authority
DE
Germany
Prior art keywords
same
sense amplifier
capacitance circuit
negative capacitance
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102011054997A
Other languages
German (de)
Other versions
DE102011054997A1 (en
Inventor
Kwi-sung Yoo
Min Ho Kwon
Wun-ki Jung
Dong Hun Lee
Jae Hong Kim
Jin Ho Seo
Won Ho Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102011054997A1 publication Critical patent/DE102011054997A1/en
Publication of DE102011054997A8 publication Critical patent/DE102011054997A8/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Amplifiers (AREA)
DE102011054997A 2011-01-10 2011-11-02 Sense amplifier with negative capacitance circuit and device with the same Pending DE102011054997A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0002308 2011-01-10
KR1020110002308A KR101798992B1 (en) 2011-01-10 2011-01-10 Sense amplifier with negative capacitance circuit and apparatuses including the same

Publications (2)

Publication Number Publication Date
DE102011054997A1 DE102011054997A1 (en) 2012-07-12
DE102011054997A8 true DE102011054997A8 (en) 2012-09-20

Family

ID=46454971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011054997A Pending DE102011054997A1 (en) 2011-01-10 2011-11-02 Sense amplifier with negative capacitance circuit and device with the same

Country Status (3)

Country Link
US (1) US8872938B2 (en)
KR (1) KR101798992B1 (en)
DE (1) DE102011054997A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9184957B2 (en) 2012-12-27 2015-11-10 Intel Corporation High speed receivers circuits and methods
JP6188451B2 (en) * 2013-06-27 2017-08-30 オリンパス株式会社 Analog-digital converter and solid-state imaging device
US11064142B1 (en) * 2013-09-11 2021-07-13 Varex Imaging Corporation Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method
KR102275523B1 (en) * 2013-12-05 2021-07-09 삼성전자주식회사 Data transfer circuit, image sensor including the same
WO2015131172A1 (en) 2014-02-28 2015-09-03 Northeastern University Instrumentation amplifier with digitally programmable input capacitance cancellation
KR102215751B1 (en) 2014-06-11 2021-02-16 삼성전자주식회사 Image sensor for improving data transfer effeiency, method thereof, and image processing system including same
US9805777B2 (en) * 2016-02-24 2017-10-31 Arm Ltd. Sense amplifier
US10082481B2 (en) 2016-07-07 2018-09-25 Sharp Life Science (Eu) Limited Bio-sensor pixel circuit with amplification
WO2019026564A1 (en) * 2017-08-02 2019-02-07 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element and imaging device
JP7227709B2 (en) * 2017-08-02 2023-02-22 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and imaging device
US10777255B2 (en) * 2018-03-19 2020-09-15 Samsung Electronics Co., Ltd. Control signal generator for sense amplifier and memory device including the control signal generator
KR102666974B1 (en) 2018-12-28 2024-05-20 에스케이하이닉스 주식회사 Data output circuit and image sensor including the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4597171B2 (en) 1996-03-13 2010-12-15 キヤノン株式会社 Photoelectric conversion apparatus, X-ray imaging apparatus, and system having the apparatus
US6437612B1 (en) * 2001-11-28 2002-08-20 Institute Of Microelectronics Inductor-less RF/IF CMOS buffer for 50Ω off-chip load driving
WO2003064161A1 (en) * 2002-01-28 2003-08-07 Sharp Kabushiki Kaisha Capacitive load driving circuit, capacitive load driving method, and apparatus using the same
JP4146687B2 (en) 2002-08-22 2008-09-10 松下電器産業株式会社 CCD type solid-state imaging device and camera system using the same
NO320017B1 (en) * 2003-03-26 2005-10-10 Thin Film Electronics Asa Detection amplifier systems and matrix addressable memory devices with ± n of these
JP4691930B2 (en) 2004-09-10 2011-06-01 ソニー株式会社 PHYSICAL INFORMATION ACQUISITION METHOD, PHYSICAL INFORMATION ACQUISITION DEVICE, PHYSICAL QUANTITY DISTRIBUTION SENSING SEMICONDUCTOR DEVICE, PROGRAM, AND IMAGING MODULE
US7336214B2 (en) * 2005-12-16 2008-02-26 Alexander Krymski Analog to digital converter circuit with offset reduction and image sensor using the same
TW200735003A (en) 2006-03-03 2007-09-16 Novatek Microelectronics Corp Power-saving device for a driving circuit of a liquid crystal display panel
KR101461624B1 (en) 2008-04-21 2014-11-21 삼성전자주식회사 Image sensor for high speed readout of data

Also Published As

Publication number Publication date
KR20120080858A (en) 2012-07-18
DE102011054997A1 (en) 2012-07-12
KR101798992B1 (en) 2017-12-21
US20120176523A1 (en) 2012-07-12
CN102595063A (en) 2012-07-18
US8872938B2 (en) 2014-10-28

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H04N0005378000

Ipc: H04N0025780000