DE102010047397A1 - Optical device e.g. organic LED, has insulator that is arranged on bottom electrode layer at side of functional layer stack such that top electrode layer is formed on insulator and functional layer stack - Google Patents

Abstract

The optical device (1) has a layer laminate (2) having bottom and top electrode layers (3,4) on a metallic layer (10) formed on a substrate (9). A stack (5) having functional layers (6-8) is arranged between the electrode layers. An insulator (13) consisting of an electrically non-conductive material is arranged on the bottom electrode layer at the side of the functional layer stack such that the top electrode layer is formed on the insulator and functional layer stack. Independent claims are included for the following: (1) method for manufacturing of optical device; and (2) semi-finished product used during manufacturing of optical device.

Description

• – zwei elektrisch leitende Elektrodenschichten, von denen die eine Elektrodenschicht eine Bodenelektrode und die andere Elektrodenschicht eine Deckelektrode bildet, und
• – einen zwischen den Elektrodenschichten angeordneten Stapel aus Funktionsschichten

umfasst, und mit einem Substrat, das mindestens eine metallische Schicht enthält.The present invention relates to an optical component, in particular an organic light emitting diode ("organic light emitting diode", hereinafter OLED), with a layer system, which at least

• Two electrically conductive electrode layers, of which one electrode layer forms a bottom electrode and the other electrode layer forms a cover electrode, and
• - A arranged between the electrode layers stack of functional layers

and a substrate containing at least one metallic layer.

As is known, OLEDs with such a structural design can advantageously be used in particular for screens and displays, but also for large-area room lighting. Their mode of action is based on the fact that certain polymers emit light as soon as they are in a sandwich structure made of different conductive layers to which a voltage is applied.

An optical device of the type described above is as an embodiment of the in the WO 2009/021741 A2 described organic electronic components known. The WO 2009/021741 A2 is primarily concerned with the realization of a cooling of OLEDs and similarly structured organic solar cells. It is with reference to 2 of the document describes an organic electronic component with a carrier consisting of a flexible film substrate which can perform a cooling function and be metallized. Special notes on the production of the device with the flexible support are not apparent from the document.

The present invention furthermore relates to a method for producing optical components, in particular organic light-emitting diodes, which comprises applying, in a continuous roll-to-roll process, a layer system to a strip-shaped substrate which contains at least one metallic layer the layer system comprises at least two electrically conductive electrode layers, of which one electrode layer forms a bottom electrode and the other electrode layer forms a cover electrode, and a stack of functional layers arranged between the electrode layers.

Finally, the present invention relates to a semi-finished product of such a manufacturing method.

A major advantage of OLEDs is, in particular, that if the substrate is not made of glass, but of a plastic such as PET (polyethylene terephthalate), cellulose triacetate, PEN (polyethylene naphthenate), and / or of a metal such as a ribbon or sheet Aluminum, copper or stainless steel foil, consists - as flexible opto-electronic components can be executed. Not only are numerous application advantages associated with this, but it is also possible to produce the components in a continuous and therefore cost-effective roll-to-roll process ("coil-to-coil process").

The mentioned fields of application of the organic components require, in particular for a contacting of the layers, a layer structuring which can be realized via different structuring methods, such as, for example, sputtering over masks, lithography, printing and the like. Here, in a selective structuring, as can be used in particular for the partial removal of an anode layer, structuring processes are known for which, taking into account experience from photovoltaics different manufacturing concepts have been developed and implemented in industrial practice.

Thus, in a continuous roll-to-roll process for patterning of layers which are applied by means of a vacuum coating, provision may be made for masking the tape during the coating process in the strip running direction by means of suitable masks.

As a simple and effective method has also been a structuring of the layers by laser. There are methods that achieve very good results on the basis of a mask projection, ie a partial coverage of the surface with masks made of laser-resistant material. In the Schichtablation by the laser beam is worked in particular in a so-called "one-shot mode" in which z. B. an indium tin oxide layer can be removed with only one laser pulse and which is applicable both in a periodically operating batch, as well as in a continuous roll-to-roll process.

The biggest technical problem with OLEDs is the low lifetime of some of the organic materials used to fabricate the devices. This is due, among other things, to some of the electroluminescent materials used as light emitters changing slightly under the influence of water or oxygen, resulting in significant Damage can lead to the complete destruction of the components. Even in the cathodes of the known optical components used reactive metals can be corrosively attacked under the influence of oxygen and water. Therefore, such devices require encapsulation with low moisture and oxygen permeation rates.

The present invention has for its object to provide an optical device of the type described above, in particular an organic light emitting diode OLED, and a manufacturing method of the type described above and a semi-finished for use in such a method, wherein in a simple method of manufacturing the device an increased Life of the device should be guaranteed.

According to the invention, this is achieved for the optical component by applying to the electrode layer forming the bottom electrode at least one insulator path consisting of an electrically nonconducting material which laterally delimits at least part of the stack of functional layers and the electrode layer forming the cover electrode.

According to the invention, this is achieved for the method in that first the electrode layer forming the bottom electrode is applied to the substrate at least on a partial surface, then insulator webs of an electrically non-conductive material are patterned onto this electrode layer in the transverse direction of the tape of the substrate, then onto the electrode layer and the insulator paths of the stacks of functional layers and the electrode layer forming the cover electrode are applied, and finally the electrode layer forming the top electrode and the stack of functional layers are removed in a region over the insulator paths down to the surface of the insulator paths. The removal can be carried out preferably by means of laser radiation.

Components according to the invention can advantageously be produced by the method according to the invention, which comprises a continuous roll-to-roll process applied to the strip-shaped substrate and a structuring of the layer system that is technologically easy to implement. In this case, each component according to the invention is optimally protected from corrosive influences by virtue of the fact that the insulator paths laterally delimit the stack of functional layers and the electrode layer forming the cover electrode, and these are therefore not exposed at the edge during manufacture or in the finished product. In addition, the isolator tracks advantageously prevent the occurrence of short-circuit currents between the electrodes when a component according to the invention is used. This ensures an increased life.

According to production by the method according to the invention, the component according to the invention may preferably have lateral edge surfaces formed in particular by a separation process for separating the component from the roll, which run along the substrate, the electrode layer forming the bottom electrode and the insulator path applied to this electrode layer

A semi-finished product according to the invention that can preferably be used for producing an optical component according to the invention in a method according to the invention is characterized in that it comprises a strip-shaped substrate which contains at least one metallic layer, wherein an electrode layer forming a bottom electrode is applied to the substrate, on which in the transverse direction of the band of the substrate insulator tracks are structured from an electrically non-conductive material.

In this case, in a further advanced manufacturing stage of the semifinished product - in particular according to the process flow of the method according to the invention - the stack of functional layers and the electrode layer forming the cover electrode can be applied both on the electrode layer forming the bottom electrode between the insulator paths and on the insulator paths.

In an even more advanced manufacturing stage of the semifinished product, the stack of functional layers and the electrode layer forming the cover electrode can be applied between the insulator paths on the electrode layer forming the bottom electrode-and in particular exclusively there.

Further advantageous embodiments of the invention are contained in the subclaims and in the following detailed description.

On the basis of illustrated by the accompanying drawings embodiments and their variants, the invention will be explained in more detail. Showing:

1 3 a perspective partial view of a front side of a component according to the invention designed as an OLED,

2 a block diagram of the invention essential as well as optional process steps of a method according to the invention,

3 a plan view of an embodiment of a semifinished product according to the invention,

4 a sectional view of in 3 shown embodiment of a semifinished product according to the invention along the line IV-IV in 3 .

5 3 a perspective partial view of a further embodiment of a semifinished product according to the invention,

6 a scale cross-sectional view of the in 1 shown component according to a section through the center plane M in a view corresponding to the arrows VI-VI in 1 .

7 and 8th schematic perspective views of further embodiments of a semifinished product according to the invention,

9 a side view of a variant of the execution of a semifinished product according to the invention in the manner of 8th .

10 and 11 a side view of the execution of a semifinished product according to the invention, with representation of two variants of the manufacturing steps, by a semi-finished by the type of 7 into a semi-finished product of the type of 8th and finally can be converted into a component according to the invention,

12 a cross-section through another embodiment of a device according to the invention in a representation analogous to 6 ,

In the figures of the drawing, the same and corresponding parts are provided with the same reference numerals, so that they are also described only once.

As first off 1 shows, includes an inventive optical component 1 in which - as shown - in particular an organic light emitting diode 1 - OLED - can act, a shift system 2 which comprises at least two electrically conductive electrode layers 3 . 4 contains, of which an electrode layer 3 a bottom electrode and the other electrode layer 4 forms a cover electrode, and one between the electrode layers 3 . 4 arranged stacks 5 from functional layers 6 . 7 . 8th , The shift system 2 is located on a substrate arranged below the bottom electrode 9 containing at least one metallic layer 10 contains. The substrate 9 may preferably be deformable and in particular elastically bendable.

The exemplified embodiment according to the invention is in particular a so-called inverted OLED structure in which only a so-called "top emission" TE of the light on the substrate 9 turned away side. Such structures are z. B. for active matrix displays needed, the non-transparent substrates 9 Thus, for example, which - as shown - a metallic layer 10 in the substrate 9 exhibit. To produce inverted OLEDs, the layer deposition takes place on the substrate 9 - as in 1 in the result shown - inverse in comparison with the usual, non-inverted OLEDs, in particular in a sequence, explained in more detail below, cathode, ETL, EML, HTL, anode, wherein in the layer system 2 additional intermediate layers can be provided.

For the production of the layer system 2 gets on the substrate 9 , According to the invention preferably in a high vacuum, as the electrode layer 3 forming the bottom electrode, a cathodic layer deposited from the nearly transparent, indium tin oxide (ITO) oxide of aluminum-doped zinc oxide (AZO), made of silver, aluminum and / or another metal or an alloy with low electron work function, such as. As calcium, barium, ruthenium or a magnesium-silver alloy, may exist. The cathode, which need not be transparent in the context of the invention, serves to inject electrons as negative charge carriers.

The cathode then becomes an electron conduction layer 8th ("Electron transport layer" - ETL) applied, which consists of an n-type semiconductor. N-type semiconductors are formed by the incorporation of a donor atom into a crystal structure, e.g. For example, by the incorporation of pentavalent phosphorus in tetravalent silicon, free mobile electrons occur between stationary positively charged atomic fuselages.

On the ETL 8th becomes a layer 7 applied, which either contains at least one dye or completely from at least one dye, such as. As aluminum tris (8-hydroxyquinoline), which is also referred to as Alq3 may exist. This layer 7 is referred to as a light emission or emitter layer 7 ("Emitter layer" - EML). It is the actual organic layer that gives the OLED its name.

On the EML 7 becomes a hole-line layer 6 ("Hole transport layer" HTL) applied, which consists of a p-type semiconductor. P-type semiconductors are formed by the incorporation of an acceptor atom into a crystal structure, e.g. B. by the incorporation of trivalent boron in tetravalent silicon, free therein Movable, positively charged holes occur between stationary negatively charged atomic hulls.

In conclusion, as the electrode layer 4 , which forms the cover electrode, a transparent or to ensure the light emission TE at least partially transparent anodic vapor-deposited, which may also consist of ITO, AZO and / or one of the metals or alloys mentioned. The anode provides positive charges, posing as the holes through the HTL 6 move.

When a voltage is applied, the holes emanating from the anode and the electrons emanating from the cathode come towards each other and meet in the EML 7 why this layer 7 also recombination layer is called. Electrons and holes form an excited state in this, which leads to a light emission. The color of the emitted light depends on the energy gap between the excited and a ground state of the dye and can be selectively changed by varying the dye molecules. The light passes through the transparent layers to the outside and is in the layer structure up and / or down - there by the lowest in the layer sequence lying substrate 9 - emitted. Depending on the direction of the light extraction one speaks of the so-called "top emission" TE or of a "bottom emission". The latter can be with a non-transparent substrate 9 not take place.

Between the anodic electrode layer 4 and the HTL 6 can in the stack 5 from the functional layers 6 . 7 . 8th optionally in addition a so-called electron blocker layer, such as a layer of poly-3,4-ethylenedioxythiophene (PEDOT) in combination with polystyrene sulfonate (PSS) can be provided, which serves to lower the injection barrier for the holes and also the indiffusion of indium in the HTL 6 prevented.

Between the cathodic electrode layer and the ETL 8th can in the stack 5 from the functional layers 6 . 7 . 8th Optionally, a so-called hole blocking layer to reduce the injection barrier for electrons are deposited as a very thin layer of lithium fluoride, cesium fluoride or silver.

Finally, on top of the anodic electrode layer 4 additionally a light-outcoupling layer (not shown).

The substrate 9 may be single-layered or preferably multi-layered. So how can 1 results in leveling a rough substrate 9 on the surface 14a metallic layer 10 a simultaneously isolating leveling layer 11 be present, which typically consists of a paint, such. As one, a sol-gel system or an acrylate-containing paint formulation can exist. The layer can be applied, for example, in a printing method, which is advantageously also carried out in a vacuum.

As well as through 1 is illustrated, the invention provides that the device 1 lateral separating edge surfaces 12 each through the substrate 9 , the electrode electrode forming the bottom electrode 3 and one on this electrode layer 3 applied, consisting of an electrically non-conductive material insulator path 13 run. The isolator track 13 For its part, it limits the stack laterally 5 from functional layers 6 . 7 . 8th and the electrode layer forming the top electrode 4 ,

Here it is in the sense of ensuring a long life of the device according to the invention 1 , in particular the components of the layer system endangered by moisture and oxygen in their corrosion resistance 2 advantageous if the on the bottom electrode layer 3 footing, consisting of the electrically non-conductive material insulator path 13 without gaps on the stack 5 from functional layers 6 . 7 . 8th and on the electrode layer forming the cover electrode 4 is applied.

Inventive components 1 can advantageously be produced by the method according to the invention, which generally consists in applying the described layer system in a continuous roll-to-roll process 2 on the band-shaped substrate 9 comprising, wherein first the electrode layer forming the bottom electrode 3 at least on a partial surface of the substrate 9 is applied, then to this electrode layer 3 in the transverse direction of the band of the substrate 9 the insulator tracks 13 be structured, then on the electrode layer 3 and the insulator tracks 13 the stack 5 from functional layers 6 . 7 . 8th and the electrode layer forming the top electrode 4 be applied and finally, in particular by means of laser radiation, the electrode layer forming the top electrode 4 and the stack 5 from the functional layers 6 . 7 . 8th in an area above the isolator tracks 13 be removed down to the surface.

The process stages of the method according to the invention are - including only optionally available process steps - based on the in 2 illustrated block diagram in two preferred embodiments A and B described in more detail below.

option A

In a first, optional process step, by the box I in 2 is represented takes place for the substrate 9 which is a metal band 10 comprises, which may typically consist of aluminum, steel, stainless steel, copper o. Ä., A leveling by application of the insulating layer 11 on the metal layer 10 , Thereafter, a check or proof of the completed leveling of the surface 14 of the substrate 9 by means of a roughness measurement based on DIN EN ISO 4287 and DIN EN ISO 4288 be made. The arithmetic mean roughness Ra - determined as the arithmetic mean of the magnitudes of all profile values - should then preferably be less than 10 nm, the individual values of the measurements should be in the range between 5 nm and 15 nm. The mean surface roughness Rz - determined over five individual measurement distances Ir as the arithmetic mean of the respective difference between the height of the largest profile peaks and the depth of the largest profile valley - should preferably be less than 50 nm, the individual values should be in the range between 20 nm and 150 nm ,

In a second, not optional, step by the box II in 2 is represented, the application of the electrode electrode forming the bottom electrode takes place 3 that on the substrate 9 is deposited. In particular, this application consists in a metallization of the leveling layer 11 that typically z. B. with silver or aluminum. In this context, it should be mentioned that in addition there is also an adhesion promoter layer (not shown) on the leveling layer 11 under the electrode layer 3 can be provided.

It will be there - as this particular 4 shows - in this variant, only a part 15 the leveling layer 11 metallized. For another part 16 , the metallization is prevented. This happens z. B. on panels that prevent in particular in an edge region of the tape along the strip running direction a coating. The arrow BLR in 3 shows the tape running direction, and the double arrow QR indicates the transverse direction of the tape. Alternatively, however, a full-surface metallization with the electrode layer would be 3 possible, then then again in the not with the electrode layer 3 part to be covered 16 the surface 14 the leveling layer 11 a subsequent removal of the metallization, in particular by means of selective laser ablation, could be made.

In a third invention essential to be provided method step, the box III in 2 symbolizes become on the soil electrode forming electrode layer 3 in the transverse direction QR of the band the insulator tracks 13 structured from an electrically non-conductive material, the z. B., as already mentioned, may consist of a paint. The isolator tracks 13 are not applied flat and serve in particular to achieve a raised structure on the electrode layer transverse to the strip running direction BLR. The isolator tracks 13 are not completely removed in a later step, but remain on the electrode layer 3 ,

In this step, a first embodiment HZ1 of a semifinished product HZ according to the invention is produced, in accordance with the process sequence, as described in 5 is shown.

In a fourth, also to be provided as essential to the invention process step (box IV in 2 ) becomes the stack 5 the functional layers 6 . 7 . 8th the OLED applied, while the electrode layer 3 the bottom electrode is not completely covered. An in 6 (and also 1 such as 7 and 8th ) shown area proportion 17 remains free, the later of a first contact K1 of the OLED, namely the contacting of the electrode layer 3 the bottom electrode, serves. This can in turn z. B. can be achieved via panels that prevent coating in an edge region of the tape along the strip running direction BLR.

In the fifth process step, for which the box V in 2 stands, the electrode layer becomes 4 the cover electrode on the stack 5 the functional layers 6 . 7 . 8th the OLED is applied, the electrode layer 3 the bottom electrode not at all and the stack 5 is not completely covered. Again, an in 6 (and also 1 such as 7 and 8th ) shown Fächenanteil 18 be kept free by the use of screens, which prevent a coating in an edge region of the tape along the strip running direction BLR.

In this step arises - according to the process sequence second - execution HZ2 a semifinished product HZ according to the invention, as these in 7 is shown.

The sixth process step - illustrated by the box VI in 2 - Provides a division of the endless belt into structured sections A ₁ , A ₂ , A ₃ ... before (see 3 ), by z. B. via a laser ablation of the cover electrode layer 4 and the pile 5 the functional layers 6 . 7 . 8th in the areas of the isolator tracks 13 a selective layer removal takes place until the surface 19 the insulating layer located on the base electrode, ie the insulator paths 13 , is reached.

In this step, a HZ3A - according to the process sequence third - is created a semifinished product HZ according to the invention, like these in 3 , such as 8th to 11 is shown.

The fourth method step may also be omitted by omitting the fifth method step - as in the lower part of FIG 2 shown - immediately connect the sixth step. If the fifth step is skipped, omission of application of the electrode layer may also occur 4 the cover electrode on the stack 5 the functional layers 6 . 7 . 8th - as in the lower part of 2 shown - immediately connect the sixth step. Then arises in this step also - according to the process sequence third - but slightly modified execution HZ3B a semifinished product HZ according to the invention, which is not shown figuratively.

9 (and also one of the insulator tracks 13 in 5 ) shows a possible cross-sectional design of the insulator tracks 13 , which is particularly suitable, a current transport e ^- , in the form of leakage currents to a short circuit between the electrode layer 4 , which forms the top electrode and the electrode layer 3 , which forms the bottom electrode, could lead to effectively prevent it. In contrast to the other illustrated, in cross-section rectangular embodiments of the insulator webs 13 , in this embodiment is a respective foot area 20 the track wider than a head area 21 , The head area 21 is rounded. This is created by the isolator track 13 the stack 5 from functional layers 6 . 7 . 8th and the electrode layer forming the top electrode 4 laterally limited, a comparatively larger insulation area IF than in a rectangular version of the cross section.

In the seventh procedural step, for in 2 the boxes VIIA and VIIB and VIIC stand, arises in different variants HZ4A, HZ4B or HZ4C - according to the process sequence fourth - execution of a semifinished product HZ invention.

The seventh process step can be carried out in a thin-film encapsulation (Box VIIA ), through which the application of a protective barrier layer is carried out in order to protect the sensitive organic layers from moisture and oxygen or to prevent leakage currents between the electrodes. This results in a first variant HZ4A of the fourth embodiment of a semifinished product HZ according to the invention.

For the direct application of a barrier layer in the context of thin-layer encapsulation, for example, a known so-called atomic layer deposition (ALD) is suitable. In such an ALD are in a CVD process ("chemical vapor deposition" - CVD), individual partial reactions, such as a first Chemisorptionsschritt and a second, z. B. in a hydrolytic decomposition or oxidation existing reaction step of the overall reaction separated from each other. By means of this process is a controlled production of ultrathin layers, i. H. with layer thicknesses in the nanometer range, but as a defect-free continuum, possible.

Furthermore, the seventh process step in a lamination (box VIIB ) one only in 1 indicated, in particular made of plastic film 22 exist, which in turn can be provided with special barrier layers, which has a relatively lower permeability to the corrosive substances than the layers to be protected itself. Then, a second variant HZ4B of the fourth embodiment of a semifinished product HZ according to the invention.

Finally, for the production line in which the fifth method step is skipped, in the seventh method step (box VIIC ) a plastic film 22 be laminated already in a composite with the electrode layer 4 stands, which forms the cover electrode. In this step, a fourth embodiment of a semifinished product HZ according to the invention then arises-in accordance with the process sequence-but in a third variant HZ4C.

The semifinished product HZ may preferably be formed as a coil having a width of 30 mm to 1600 mm and a thickness D of about 0.1 to 1.5 mm. A thickness or height H of the insulator paths to be selected 13 This is due to the functionally or technologically related layer thicknesses or heights of the stack 5 from the functional layers 6 . 7 . 8th and the electrode layer forming the top electrode 4 certainly.

Advantageously, the method steps II to VII as by the enclosure E of the corresponding boxes in 2 is implied to be realized in a single vacuum process sequence of a roll-to-roll process.

The eighth process step (Box VIII in 2 ) consists in a cross-section of the endless belt, said separation, z. B. by means of impact shears or by laser cuts, directly to the points B1 of the structured insulator webs 13 can be done, like this 10 illustrated by the scissors symbol. It is also possible - and this shows 11 -, the substrate 9 including the layers applied to it 3 . 4 . 5 . 13 to separate at points B2, B3, where the electrode electrode forming the top electrode 4 and the stack 5 from functional layers 6 . 7 . 8th in an area above the isolator tracks 13 is not removed, but each lie between two such structured areas. The sectional planes through which on the device according to the invention 1 the lateral separating edge surfaces 12 be formed, but always have to go through the insulator 13 run.

A final ninth step (box IX in 2 ) provides an electrical contact of the bottom and the cover electrode, as this 6 shows. On the one hand serves, as already stated, the remaining free area 17 at the edge of the lower electrode layer 3 the contacting K1 of the anode, while on the other hand, a second contact K2 - also edge, but diametrically opposite - on the upper electrode layer 4 , which forms the top electrode and cathode, is provided.

Variant B

According to the second preferred embodiment B for producing an embodiment of a device according to the invention 1 as they are in 12 is shown, the process steps I to VIII performed almost identical to the first variant A, but in the steps II to V some minor deviations are provided, which are explained below.

In contrast to the first variant A, in the second method step of the second variant B, the substrate 9 in any case, full surface (total surface area 14 in 12 ) metallized.

Furthermore, in contrast to the first variant A in the third method step, in addition to the insulator paths running in the transverse direction QR 13 in the edge region of the band, at least one layer-like, nonconductive band structure extending in the direction of strip travel BLR 23 applied, as well as the running in the transverse direction QR insulator paths 13 can be made and formed in its cross-section and how this an insulation and a structural layer on the lower Elektodenschicht 3 formed. The band structure 23 is - as well as the transverse insulator paths 13 - Not applied flat and is no longer removed in a later process step, but remains on the metallization. It allows a subsequent contacting of the electrodes, in which the contact points K1, K2 in a small spatial distance from each other on one side of the device according to the invention 1 lie like this 12 shows.

In the fourth method step, the application of the layer stack takes place 5 , where not only the bottom electrode, but also the additional band structure 23 is not completely covered. On the band structure 23 stay in 12 with the reference number 24 designated surface portion free, on the later the second contact K2 of the OLED, namely the electrode layer 4 the cover electrode takes place. Keeping the area proportion free 24 can z. B. on panels that prevent coating in the direction of strip travel direction BLR realized.

As far as the sixth method step of the second variant is concerned, it should be noted that when dividing the endless strip into the structured sections A ₁ , A ₂ , A ₃ ... The electrode layer forming the cover electrode 4 and the stack 5 from functional layers 6 . 7 . 8th only in the areas above the belt structure running along the strip running direction BLR 23 be removed, where the band structure 23 at right angles to the insulator tracks 13 standing course the latter crosses.

The present invention is not limited to the illustrated embodiment, but also includes all the same means and measures in the context of the invention. Thus, by a device according to the invention 1 Also includes non-inverted OLEDs with a layer order (from bottom to top) anode, HTL, EML, ETL, cathode, where also in the layer system 2 additional intermediate layers can be provided. Consequently, the invention can in principle not only in the described polarity of the electrode layers 3 . 4 and not only in an OLED, but in fundamentally similar structure of the device according to the invention 1 also in the field of photovoltaic application. Furthermore, instead of laser radiation, another suitable high-energy radiation could be used for structuring in the method according to the invention.

Several OLEDs can also be deposited transversely to the strip running direction, since with wide strips, such as with a width of 1250 mm, of course several OLEDs with a width of z. B. 150 mm to fit the tape. In such a case, therefore - in particular identically formed - OLED structures can repeat transversely to the strip running direction BLR. It can be z. B. can be achieved by the mask technique described that on certain surfaces of the substrate 9 neither electrodes nor light surfaces are deposited. Or it occurs in certain band longitudinal areas on the substrate 9 the application of an insulating band structure of the type as described above by the reference numeral 23 was designated, then later in these areas -. B. with laser or scissors - the OLEDs by separating from the tape transversely to the strip running direction BLR or separating from each other as separate components 1 are produced, similar to the already described separation of the OLEDs along the strip running direction BLR.

Through the insulator tracks 13 and the band structures 23 even more complex - apart from their respective height - two-dimensional structures may be formed on the substrate surface, these need not necessarily be orthogonal to each other and / or to the band edges. For example, components according to the invention 1 be made with a different shape than a rectangular plan, z. Example, with a diamond or trapezoidal floor plan or with a rounded floor plan, such as with a circular or elliptical floor plan, so the expert can the course of the insulator paths 13 and the band structures 23 adjust accordingly.

The invention, as already evident from the above statements, includes the presence of additional layers or a different chemical composition than the one described by way of example in the layer system 2 , in the electrode layers 3 . 4 and in the substrate 9 not from.

Finally, the skilled person can provide further additional expedient technical measures, without departing from the scope of the invention. Such a measure may be, for example, to provide an optional structure for homogenizing the charge distribution in the cover electrode, which consists in that on a transparent cover electrode, a metallic and semi-transparent or non-transparent conductor structure, for. B. in a rectangular or honeycomb pattern is applied.

Furthermore, the invention is not limited to the feature combinations defined in the independent claims, but may also be defined by any other combination of particular features of all individually disclosed features. This means that in principle virtually every individual feature of the cited claims can be omitted or replaced by at least one individual feature disclosed elsewhere in the application. In this respect, the claims are to be understood merely as a first formulation attempt for an invention.

LIST OF REFERENCE NUMBERS

1

module

2

Layer system of 1 out 3 . 4 . 5

3

lower electrode layer of 2

4

upper electrode layer of 2

5

Stack out 6 . 7 . 8th from 2

6

Hole line layer (HTL)

7

Emitter layer (EML)

8th

Electron conducting layer (EL)

9

Substrate of 1

10

metallic layer of 9

11

Leveling layer of 9

12

Separating edge surface of 1

13

Isolator track on 3

14

Surface of 9 ( 11 )

14a

Surface of 10

15

with 3 covered area of 14

16

not covered with 3 area fraction of 14

17

not covered with 5 area fraction of 13

18

not covered with 4 area fraction of 5

19

Surface of 13

20

Foot area of 13 ( 5 . 9 )

21

Head area of 13 ( 5 . 9 )

22

Slide on 2

23

band structure

24

not covered with 5 area fraction of 23

I

first step ( 2 )

II

second step ( 2 )

III

third process step ( 2 )

IV

fourth step ( 2 )

V

fifth procedural step ( 2 )

VI

sixth process step ( 2 )

VIIA

seventh process step, first variant ( 2 )

VIIB

seventh process step, second variant ( 2 )

VIIC

seventh process step, third variant ( 2 )

VIII

eighth process step ( 2 )

IX

ninth process step ( 2 )

A1, A2, A3

Band sections of HZ

B1, B2, B3

Separation points of HZ

BLR

Tape direction

D

Thickness of HZ

e ^-

current flow

H

Height of

HZ

Workpiece

HZ1

first execution of HZ

HZ 2

second execution of HZ

HZ3A

first variant of the third version of HZ

HZ3B

second variant of the third version of HZ

HZ4A

first variant of the fourth version of HZ

HZ4B

second variant of the third version of HZ

HZ4C

third variant of the fourth version of HZ

K1

first contact of 1 (at 3 )

K2

second contact of 1 (at 4 )

M

Middle level of 1

QR

Transverse direction (orthogonal to BLR)

TE

Direction of the light emission 1

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 2009/021741 A2 [0003, 0003]

Cited non-patent literature

• DIN EN ISO 4287 [0048]
• DIN EN ISO 4288 [0048]

Claims (23)

Optical component ( 1 ), in particular organic light emitting diode, with a layer system ( 2 ), which comprises at least two electrically conductive electrode layers ( 3 . 4 ), of which one electrode layer ( 3 ) a bottom electrode and the other electrode layer ( 4 ) forms a cover electrode, and - one between the electrode layers ( 3 . 4 ) arranged stacks ( 5 ) from functional layers ( 6 . 7 . 8th ) and with a substrate (below the bottom electrode) ( 9 ), the at least one metallic layer ( 10 ), characterized in that the electrode layer forming the bottom electrode ( 3 ) at least one of an electrically non-conductive material insulator track ( 13 ) is applied, which the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and the electrode layer forming the cover electrode ( 4 ) At least partially bounded laterally. Component ( 1 ) according to claim 1, characterized in that the component ( 1 ) lateral, in particular formed by a separation process, edge surfaces ( 12 ), each along the substrate ( 9 ), the electrode layer forming the bottom electrode ( 3 ) and on this electrode layer ( 3 ) applied isolator track ( 13 ). Component ( 1 ) according to claim 1 or 2, characterized in that the electrode layer ( 3 ), which forms the bottom electrode, and / or the electrode layer ( 4 ), which forms the top electrode, of indium tin oxide (ITO), of aluminum doped zinc oxide (AZO), of silver, aluminum and / or of another metal or an alloy with low electron work function, such as calcium, barium, Ruthenium or a magnesium-Siber alloy, consists / consist. Component ( 1 ) according to one of claims 1 to 3, characterized in that between the electrode layers ( 3 . 4 ) arranged stacks ( 5 ) from functional layers ( 6 . 7 . 8th ) at least one electron conduction layer - ETL - ( 8th ), which consists of an n-type semiconductor, an organic light emission layer - EML - ( 7 ) containing at least one dye, such as aluminum tris (8-hydroxyquinoline), and a hole-conducting layer - HTL - ( 6 ) composed of a p-type semiconductor. Component ( 1 ) according to one of claims 1 to 4, characterized in that the existing of the electrically non-conductive material insulator path ( 13 ) without gaps on the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and at the electrode layer forming the cover electrode ( 4 ) is present. Component ( 1 ) according to one of claims 1 to 5, characterized in that the substrate ( 9 ) is multilayered, wherein over the metallic layer ( 10 ) an insulating leveling layer ( 11 ), which consists for example of a paint, such as one, a sol-gel system or an acrylate-containing paint formulation. Component ( 1 ) according to one of claims 1 to 6, characterized in that the substrate ( 9 ) on its surface ( 14 ) has a roughness measurement according to DIN EN ISO 4287 and DIN EN ISO 4288 an arithmetic mean roughness (Ra) of less than 10, wherein the individual values of the measurements are in the range between 5 nm and 15 nm, and a mean surface roughness (Rz) of less than 50 nm, the individual values being in the range between 20 nm and 150 nm. Component ( 1 ) according to one of claims 1 to 7, characterized in that the substrate ( 9 ) is deformable and in particular elastically bendable. Component ( 1 ) according to one of claims 1 to 8, characterized in that on the electrode layer ( 3 ), which forms the bottom electrode, at right angles to the insulator paths ( 13 ) extending band structures ( 23 ) are applied from an electrically non-conductive material partially through the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and the electrode layer forming the cover electrode ( 4 ) are covered. Component ( 1 ) according to one of claims 1 to 9, characterized in that the insulator tracks ( 13 ) and / or the band structures ( 23 ) are rectangular in cross-section. Component ( 1 ) according to one of claims 1 to 9, characterized in that the insulator tracks ( 13 ) each have a footer ( 20 ), which seen in cross-section wider than a particular rounded head area ( 21 ) of the insulator tracks ( 13 ). Component ( 1 ) according to one of claims 1 to 11, characterized in that at least the layer system ( 2 ) is covered by at least one barrier layer which has a comparatively lower permeability to moisture and oxygen and as thin-film encapsulation or in a laminated plastic film ( 22 ) is present. Method for producing optical components ( 1 ), preferably of organic light-emitting diodes, in particular of components ( 1 ) according to any one of claims 1 to 12, which comprises applying, in a continuous roll-to-roll process, a layer system ( 2 ) on a band-shaped substrate ( 9 ), the at least one metallic layer ( 10 ), the layer system ( 2 ) at least two electrically conductive electrode layers ( 3 . 4 ), of which the one electrode layer ( 3 ) a bottom electrode and the other electrode layer ( 4 ) forms a cover electrode, and one between the electrode layers ( 3 . 4 ) arranged stacks ( 5 ) from functional layers ( 6 . 7 . 8th ), characterized in that first the electrode layer forming the bottom electrode ( 3 ) at least on a partial surface ( 15 ) of the substrate ( 9 ) is applied, then to this electrode layer ( 3 ) in the transverse direction (QR) of the strip of the substrate ( 9 ) Isolator tracks ( 13 ) are structured from an electrically non-conductive material, then onto the electrode layer ( 3 ) and the insulator tracks ( 13 ) the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and preferably also the electrode layer forming the cover electrode ( 4 ) and finally the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and preferably the electrode layer forming the cover electrode ( 4 ) in an area above the insulator paths ( 13 ) except for the surface ( 19 ) are removed. A method according to claim 13, characterized in that on a metallic layer ( 10 of the substrate ( 9 ) before onto the substrate ( 9 ) the electrode layer ( 3 ), which forms the bottom electrode, is applied to a leveling layer ( 11 ) is applied. Method according to claim 13 or 14, characterized in that the electrode layer ( 3 ), which forms the bottom electrode, on the entire surface ( 14 ) or on a partial surface ( 15 ) of the substrate ( 9 ) is applied. Method according to one of claims 13 to 15, characterized in that on the electrode layer ( 3 ), which forms the bottom electrode, at right angles to the insulator paths ( 13 ) band-extending band structures (BLR) ( 23 ) are applied from an electrically non-conductive material, which subsequently partially through the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and the electrode layer forming the cover electrode ( 4 ). Method according to one of claims 13 to 16, characterized in that by means of panels along the belt extending surface areas ( 17 . 18 . 24 ) on the electrode layer forming the bottom electrode ( 3 ), on which between the electrode layers ( 3 . 4 ) arranged stacks ( 5 ) from functional layers ( 6 . 7 . 8th ) and / or on the band-extending (BLR) band structures ( 23 ) are kept free of a coating. Method according to one of claims 13 to 17, characterized in that at least the layer system ( 2 ) is covered with at least one barrier layer which has a comparatively lower permeability to moisture and oxygen and is applied as a thin-film encapsulation or in a plastic film (US Pat. 22 ) which is laminated. Method according to one of claims 13 to 18, characterized in that the from the substrate ( 9 ) and the layers applied thereto ( 3 . 4 . 5 . 13 ) existing band, z. B. by means of impact shears or laser beam, at points (B1) where the electrode electrode forming the top electrode ( 4 ) and the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) in an area above the insulator paths ( 13 ), in particular by laser radiation, or at locations (B2, B3) in a region of the insulator paths ( 13 ), which is not structured in this way, but is divided between two structured areas. Semifinished product (HZ), in particular for the production of optical components ( 1 ) according to one of claims 1 to 12, preferably in a method according to one of claims 13 to 19, which comprises a strip-shaped substrate ( 9 ), the at least one metallic layer ( 10 ), wherein on the substrate ( 9 ) an electrode layer forming a bottom electrode ( 3 ), on the transverse direction (QR) of the strip insulator paths ( 13 ) are structured from an electrically non-conductive material. Semifinished product (HZ) according to claim 20, characterized in that, in particular exclusively, on the electrode layer forming the bottom electrode ( 3 ) between the insulator tracks ( 13 ) a stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and a top electrode forming electrode layer ( 4 ) is applied. Semifinished product (HZ) according to claim 21, characterized in that also on the insulator paths ( 13 ) the stack ( 5 ) from functional layers ( 6 . 7 . 8th ) and the electrode layer forming the cover electrode ( 4 ) is applied. Semi-finished product (HZ) according to one of Claims 20 to 22, characterized by the features of the characterizing part of one or more of Claims 2 to 12.

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