DE102009055667A1 - Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide - Google Patents

Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide Download PDF

Info

Publication number
DE102009055667A1
DE102009055667A1 DE102009055667A DE102009055667A DE102009055667A1 DE 102009055667 A1 DE102009055667 A1 DE 102009055667A1 DE 102009055667 A DE102009055667 A DE 102009055667A DE 102009055667 A DE102009055667 A DE 102009055667A DE 102009055667 A1 DE102009055667 A1 DE 102009055667A1
Authority
DE
Germany
Prior art keywords
monocrystalline
layer
silicon
silicon carbide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102009055667A
Other languages
German (de)
Inventor
Brian Murphy
Ferdinand Scholz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Universitaet Ulm
Original Assignee
Siltronic AG
Universitaet Ulm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG, Universitaet Ulm filed Critical Siltronic AG
Priority to DE102009055667A priority Critical patent/DE102009055667A1/en
Publication of DE102009055667A1 publication Critical patent/DE102009055667A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide, epitactically depositing a layer of monocrystalline gallium nitride with a thickness of 50 mu m to 2 mm on the layer of monocrystalline 3C-silicon carbide, and removing the substrate from monocrystalline silicon. The superficial layer is produced from monocrystalline 3C-silicon carbide in which carbon-ions are implanted in a pre-determined depth of the substrate from monocrystalline silicon. The method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide, epitactically depositing a layer of monocrystalline gallium nitride with a thickness of 50 mu m to 2 mm on the layer of monocrystalline 3C-silicon carbide, and removing the substrate from monocrystalline silicon. The superficial layer is produced from monocrystalline 3C-silicon carbide in which carbon-ions are implanted in a pre-determined depth of the substrate from monocrystalline silicon. The substrate from monocrystalline silicon is thermally treated with the implanted carbon so that a buried layer is formed from monocrystalline 3C-silicon carbide, and the layer lying over the buried layer from monocrystalline 3C-silicon carbide is removed up to the layer is released from the monocrystalline 3C-silicon carbide. The layer of monocrystalline gallium nitride has a thickness of 10 mu m to 1 mm. The substrate of monocrystalline silicon is removed through splitting along the layer of monocrystalline 3C-silicon carbide. The layer of monocrystalline 3C-silicon carbide is removed after removing the substrate from monocrystalline silicon.

Description

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer Scheibe bestehend aus Galliumnitrid durch Abscheidung einer monokristallinen Galliumnitrid-Schicht auf einem Substrat und anschließende Entfernung des Substrats.The invention relates to a method for producing a disk consisting of gallium nitride by deposition of a monocrystalline gallium nitride layer on a substrate and subsequent removal of the substrate.

Monokristallines Galliumnitrid (GaN) ist als Substrat für die Herstellung optoelektronischer Bauelemente wie Leuchtdioden (LEDs) von großer Bedeutung.Monocrystalline gallium nitride (GaN) is of great importance as a substrate for the production of optoelectronic devices such as light emitting diodes (LEDs).

Monokristalline Galliumnitrid-Substrate werden in der Regel hergestellt, indem zunächst eine monokristalline Schicht aus Galliumnitrid auf einem Substrat, beispielsweise aus Saphir, epitaktisch abgeschieden wird. Um Galliumnitrid in der benötigten Qualität abscheiden zu können, sind in der Regel eine oder mehrere Zwischenschichten notwendig. Diese bestehen beispielsweise aus SiO2 oder TiN. Nach der Abscheidung wird die Galliumnitrid-Schicht durch thermisch induzierte Verspannung vom Substrat getrennt, sodass eine freistehende Galliumnitrid-Schicht bzw. eine dünne Scheibe aus diesem Material entsteht. Die epitaktische Abscheidung kann auch auf einem Substrat aus monokristallinem Galliumarsenid erfolgen. In diesem Fall erfolgt die Separation der Galliumnitrid-Schicht zumeist durch chemische Entfernung des Galliumarsenids.Monocrystalline gallium nitride substrates are typically fabricated by first epitaxially depositing a monocrystalline layer of gallium nitride on a substrate, such as sapphire. In order to be able to deposit gallium nitride in the required quality, one or more intermediate layers are generally necessary. These consist for example of SiO 2 or TiN. After deposition, the gallium nitride layer is separated from the substrate by thermally induced stress so that a freestanding gallium nitride layer or a thin disk of this material is formed. The epitaxial deposition can also be carried out on a substrate of monocrystalline gallium arsenide. In this case, the gallium nitride layer is usually separated by chemical removal of the gallium arsenide.

Diese Verfahren sind jedoch sehr aufwändig und in der Regel auf Substrate mit einem Durchmesser von 50 bis 100 mm beschränkt, was die Wirtschaftlichkeit der Produktion optoelektronischer Bauelemente belastet.However, these methods are very complex and usually limited to substrates with a diameter of 50 to 100 mm, which burdens the economics of the production of optoelectronic devices.

Es ist bekannt, dass dünne Galliumnitrid-Schichten durch epitaktische Abscheidung von Galliumnitrid auf einem Silicium-Substrat mit einer oberflächlichen Schicht aus monokristallinem Siliciumcarbid abgeschieden werden können. Ein derartiges Verfahren ist beispielsweise in DE 10 2005 024 073 A1 beschrieben.It is known that thin gallium nitride layers can be deposited by epitaxial deposition of gallium nitride on a silicon substrate with a surface layer of monocrystalline silicon carbide. Such a method is for example in DE 10 2005 024 073 A1 described.

Der Erfindung lag die Aufgabe zu Grunde, qualitativ hochwertige freistehende Galliumnitrid-Schichten mit einem deutlich vergrößerten Durchmesser bereitzustellen.The invention was based on the object to provide high-quality freestanding gallium nitride layers with a significantly larger diameter.

Die Aufgabe wird gelöst durch ein Verfahren zur Herstellung einer Scheibe bestehend aus Galliumnitrid, umfassend

  • – die Bereitstellung eines Substrats aus monokristallinem Silicium mit einer oberflächlichen Schicht aus monokristallinem 3C-Siliciumcarbid,
  • – die epitaktische Abscheidung einer 50 μm bis 2 mm dicken Schicht aus monokristallinem Galliumnitrid auf der Schicht aus monokristallinem 3C-Siliciumcarbid und
  • – die Entfernung des Substrats aus monokristallinem Silicium.
The object is achieved by a method for producing a disk consisting of gallium nitride, comprising
  • The provision of a substrate of monocrystalline silicon with a superficial layer of monocrystalline 3C silicon carbide,
  • - The epitaxial deposition of a 50 microns to 2 mm thick layer of monocrystalline gallium nitride on the layer of monocrystalline 3C silicon carbide and
  • The removal of the monocrystalline silicon substrate.

Zunächst wird ein Substrat aus monokristallinem Silicium bereitgestellt, das eine oberflächliche Schicht aus monokristallinem 3C-Siliciumcarbid trägt. Dazu werden vorzugsweise Kohlenstoff-Ionen in eine vorbestimmte Tiefe des Substrats aus monokristallinem Silicium implantiert und das Substrat aus monokristallinem Silicium mit dem implantierten Kohlenstoff anschließend thermisch behandelt, wodurch sich eine vergrabene Schicht aus monokristallinem 3C-Siliciumcarbid ausbildet. Die über der vergrabenen Schicht aus monokristallinem 3C-Siliciumcarbid liegenden Schichten werden danach abgetragen, bis die Schicht aus monokristallinem 3C-Siliciumcarbid freigelegt ist. Vorzugsweise wird die freigelegte Schicht aus monokristallinem 3C-Siliciumcarbid anschließend chemisch-mechanisch poliert. Dieses Verfahren ist im Detail in DE 10 2005 024 073 A1 beschrieben.First, a monocrystalline silicon substrate is provided which carries a surface layer of monocrystalline 3C silicon carbide. For this purpose, preferably carbon ions are implanted into a predetermined depth of the substrate of monocrystalline silicon and the substrate of monocrystalline silicon is subsequently thermally treated with the implanted carbon, whereby a buried layer of monocrystalline 3C silicon carbide is formed. The layers overlying the buried monocrystalline 3C silicon carbide layer are then removed until the monocrystalline 3C silicon carbide layer is exposed. Preferably, the exposed layer of monocrystalline 3C silicon carbide is subsequently polished mechanically-mechanically. This procedure is detailed in DE 10 2005 024 073 A1 described.

Auf dem entsprechend vorbereiteten Substrat wird danach eine Schicht aus monokristallinem Galliumnitrid epitaktisch abgeschieden. Diese weist eine Dicke von 50 μm bis 2 mm, bevorzugt von 100 μm bis 1 mm auf. Da Siliciumcarbid eine ähnliche Gitterkonstante wie Galliumnitrid hat, lässt sich letzteres sehr gut auf Siliciumcarbid abscheiden. Die abgeschiedene Schicht weist daher eine sehr niedrige Defektdichte auf.Thereafter, a layer of monocrystalline gallium nitride is epitaxially deposited on the suitably prepared substrate. This has a thickness of 50 microns to 2 mm, preferably from 100 microns to 1 mm. Since silicon carbide has a similar lattice constant as gallium nitride, the latter can be deposited very well on silicon carbide. The deposited layer therefore has a very low defect density.

Schließlich wird das Substrat aus monokristallinem Silicium und vorzugsweise auch die Schicht aus monokristallinem 3C-Siliciumcarbid entfernt, sodass eine freistehende Galliumnitrid-Schicht in Form einer Scheibe entsteht, deren Dicke der Dicke der zuvor abgeschiedenen epitaktischen Galliumnitrid-Schicht entspricht. Beispielsweise können die Schichten aus Silicium und 3C-Siliciumcarbid durch mechanische Prozesse wie Schleifen, Läppen oder Polieren oder durch nass- oder trockenchemische Ätzprozesse wie z. B. mit Tetramethlyammoniumhydroxid (TMAH) entfernt werden. Vorzugsweise wird das Substrat aus monokristallinem Silicium jedoch durch Spaltung entlang der Schicht aus monokristallinem 3C-Siliciumcarbid entfernt und anschließend Reste der Siliciumcarbid-Schicht mit den vorgenannten mechanischen oder chemischen Verfahren entfernt. Die Spaltung kann durch thermisch induzierte Verspannungen ausgelöst werden.Finally, the monocrystalline silicon substrate, and preferably also the monocrystalline 3C silicon carbide layer, is removed to form a freestanding gallium nitride layer in the form of a disk, the thickness of which corresponds to the thickness of the previously deposited epitaxial gallium nitride layer. For example, the layers of silicon and 3C silicon carbide by mechanical processes such as grinding, lapping or polishing or by wet or dry chemical etching processes such. B. with tetramethylammonium hydroxide (TMAH) are removed. Preferably, however, the monocrystalline silicon substrate is removed by cleavage along the monocrystalline 3C silicon carbide layer, and then remnants of the silicon carbide layer are removed by the aforementioned mechanical or chemical methods. The cleavage can be triggered by thermally induced tensions.

Da die als Substrat verwendeten monokristallinen Siliciumscheiben mit Durchmessern von bis zu 300 mm oder sogar bis zu 450 mm zu vergleichsweise niedrigen Kosten erhältlich sind, können auf die erfindungsgemäße Weise Galliumnitrid-Scheiben mit der entsprechenden Größe hergestellt werden, was die Wirtschaftlichkeit der Herstellung optoelektronischer Bauelemente auf Galliumnitrid deutlich erhöht.Since the monocrystalline silicon wafers used as a substrate with diameters of up to 300 mm or even up to 450 mm are available at a comparatively low cost, gallium nitride wafers of the appropriate size can be produced in the manner according to the invention significantly increases the cost-effectiveness of producing optoelectronic components on gallium nitride.

Das Substrat aus Silicium lässt sich zudem auf einfache Art und Weise, beispielsweise nasschemisch, entfernen.The substrate made of silicon can also be removed in a simple manner, for example wet-chemically.

Da die epitaktische Abscheidung des Galliumnitrids nicht direkt auf dem Silicium-Substrat, sondern auf einer Siliciumcarbid-Schicht erfolgt, lassen sich aufgrund der ähnlichen Gitterkonstanten von Siliciumcarbid und Galliumnitrid weitgehend defektfreie dicke Galliumnitrid-Schichten erzeugen, sodass nach Entfernung des Siliciums und des Siliciumcarbids auch eine weitgehend defektfreie Scheibe aus Galliumnitrid vorliegt. Zudem verhindert die oberflächliche Siliciumcarbid-Schicht während der Abscheidung des Galliumnitrids parasitäre Reaktionen zwischen dem Silicium des Substrats und dem Galliumnitrid der abgeschiedenen Schicht.Since the epitaxial deposition of gallium nitride is not directly on the silicon substrate, but on a silicon carbide layer, due to the similar lattice constants of silicon carbide and gallium nitride can produce largely defect-free thick gallium nitride layers, so that after removal of silicon and silicon carbide and a largely defect-free disk of gallium nitride is present. In addition, during the deposition of the gallium nitride, the surface silicon carbide layer prevents parasitic reactions between the silicon of the substrate and the gallium nitride of the deposited layer.

Die vorliegende Erfindung eröffnet somit die Möglichkeit, Galliumnitrid-Substrate mit großem Durchmesser und hoher Qualität herzustellen.The present invention thus provides the ability to produce gallium nitride substrates of large diameter and high quality.

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • DE 102005024073 A1 [0005, 0008] DE 102005024073 A1 [0005, 0008]

Claims (5)

Verfahren zur Herstellung einer Scheibe bestehend aus Galliumnitrid, umfassend – die Bereitstellung eines Substrats aus monokristallinem Silicium mit einer oberflächlichen Schicht aus monokristallinem 3C-Siliciumcarbid, – die epitaktische Abscheidung einer 50 μm bis 2 mm dicken Schicht aus monokristallinem Galliumnitrid auf der Schicht aus monokristallinem 3C-Siliciumcarbid und – die Entfernung des Substrats aus monokristallinem Silicium.A method of making a disk of gallium nitride comprising The provision of a substrate of monocrystalline silicon with a superficial layer of monocrystalline 3C silicon carbide, - The epitaxial deposition of a 50 microns to 2 mm thick layer of monocrystalline gallium nitride on the layer of monocrystalline 3C silicon carbide and The removal of the monocrystalline silicon substrate. Verfahren gemäß Anspruch 1, wobei die oberflächliche Schicht aus monokristallinem 3C-Siliciumcarbid erzeugt wird, indem – Kohlenstoff-Ionen in eine vorbestimmte Tiefe des Substrats aus monokristallinem Silicium implantiert werden, – das Substrat aus monokristallinem Silicium mit dem implantierten Kohlenstoff thermisch behandelt wird, wodurch sich eine vergrabene Schicht aus monokristallinem 3C-Siliciumcarbid ausbildet und – die über der vergrabenen Schicht aus monokristallinem 3C-Siliciumcarbid liegenden Schichten abgetragen werden, bis die Schicht aus monokristallinem 3C-Siliciumcarbid freigelegt ist.The method of claim 1, wherein the superficial layer of monocrystalline 3C silicon carbide is produced by Carbon ions are implanted into a predetermined depth of the substrate of monocrystalline silicon, The substrate of monocrystalline silicon is thermally treated with the implanted carbon, whereby a buried layer of monocrystalline 3C silicon carbide is formed and - The above the buried layer of monocrystalline 3C silicon carbide layers are removed until the layer of monocrystalline 3C silicon carbide is exposed. Verfahren gemäß einem der Ansprüche 1 bis 2, wobei die Schicht aus monokristallinem Galliumnitrid eine Dicke von 100 μm bis 1 mm aufweist.A method according to any one of claims 1 to 2, wherein the layer of monocrystalline gallium nitride has a thickness of 100 microns to 1 mm. Verfahren gemäß einem der Ansprüche 1 bis 3, wobei das Substrat aus monokristallinem Silicium durch Spaltung entlang der Schicht aus monokristallinem 3C-Siliciumcarbid entfernt wird.A method according to any one of claims 1 to 3, wherein the monocrystalline silicon substrate is removed by cleavage along the monocrystalline 3C silicon carbide layer. Verfahren gemäß einem der Ansprüche 1 bis 4, wobei nach der Entfernung des Substrats aus monokristallinem Silicium auch die Schicht aus monokristallinem 3C-Siliciumcarbid entfernt wird.A method according to any one of claims 1 to 4, wherein after removal of the monocrystalline silicon substrate, the monocrystalline 3C silicon carbide layer is also removed.
DE102009055667A 2009-11-25 2009-11-25 Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide Ceased DE102009055667A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102009055667A DE102009055667A1 (en) 2009-11-25 2009-11-25 Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009055667A DE102009055667A1 (en) 2009-11-25 2009-11-25 Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide

Publications (1)

Publication Number Publication Date
DE102009055667A1 true DE102009055667A1 (en) 2011-03-31

Family

ID=43662661

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009055667A Ceased DE102009055667A1 (en) 2009-11-25 2009-11-25 Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide

Country Status (1)

Country Link
DE (1) DE102009055667A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2544878A1 (en) * 2003-11-13 2005-06-02 Cree, Inc. Large area, uniformly low dislocation density gan substrate and process for making the same
DE102005042587A1 (en) * 2005-01-03 2006-07-20 Samsung Electro-Mechanics Co., Ltd., Suwon Method and apparatus for producing a gallium nitride based single crystal substrate
US20060234486A1 (en) * 2005-04-13 2006-10-19 Speck James S Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers
DE102005024073A1 (en) 2005-05-25 2006-11-30 Siltronic Ag Semiconductor layer structure and method for producing a semiconductor layer structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2544878A1 (en) * 2003-11-13 2005-06-02 Cree, Inc. Large area, uniformly low dislocation density gan substrate and process for making the same
DE102005042587A1 (en) * 2005-01-03 2006-07-20 Samsung Electro-Mechanics Co., Ltd., Suwon Method and apparatus for producing a gallium nitride based single crystal substrate
US20060234486A1 (en) * 2005-04-13 2006-10-19 Speck James S Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers
DE102005024073A1 (en) 2005-05-25 2006-11-30 Siltronic Ag Semiconductor layer structure and method for producing a semiconductor layer structure

Similar Documents

Publication Publication Date Title
DE102011076845B4 (en) Low temperature binding process and heterostructure
DE102009047881B4 (en) Process for producing an epitaxially produced layer structure
DE112011100105B4 (en) DIVIDING FOR A SEMICONDUCTOR SUBSTRATE
DE102008006745B3 (en) Method for producing a semiconductor structure
DE102009036412A1 (en) Relaxation of a layer of tensioned material using a stiffening agent
EP2112699A2 (en) Nitride-based semiconductor product and method for its production
DE102009051520A1 (en) Process for the production of silicon semiconductor wafers with layer structures for the integration of III-V semiconductor devices
EP1770795A2 (en) Substrate for epitaxy, method of fabricating it and method of fabricating a semiconductor chip
DE102012103686A1 (en) Epitaxial substrate, process for producing an epitaxial substrate and optoelectronic semiconductor chip with an epitaxial substrate
DE102019116743A1 (en) Group III nitride epitaxy substrates
DE102011114671A1 (en) Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
DE102012107001A1 (en) Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
DE112008000394T5 (en) A method of manufacturing a substrate comprising a deposited buried oxide layer
DE112014000633B4 (en) Semiconductor layer sequence and method for producing a semiconductor layer sequence
DE102011012928A1 (en) Method for producing a thin-film semiconductor body and thin-film semiconductor body
DE102012217631A1 (en) Optoelectronic component with a layer structure
DE112010001477T5 (en) Adjustment of the grid parameter of a layer of strained material
DE102010052727B4 (en) Method for producing an optoelectronic semiconductor chip and such a semiconductor chip
DE102009055667A1 (en) Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide
DE112017005899T5 (en) Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component
DE102015107661B4 (en) Process for the production of a nitride compound semiconductor component
DE102015200692A1 (en) Epitaxial diamond layer and process for its preparation
DE102014106505A1 (en) Method for producing a semiconductor layer sequence
DE112019007354B4 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
DE102007027641B4 (en) Method for producing a light-emitting diode

Legal Events

Date Code Title Description
OAV Publication of unexamined application with consent of applicant
OP8 Request for examination as to paragraph 44 patent law
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final

Effective date: 20120216