DE102009032998B4 - Component with contact elements and method for producing the same - Google Patents
Component with contact elements and method for producing the same Download PDFInfo
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- DE102009032998B4 DE102009032998B4 DE102009032998.6A DE102009032998A DE102009032998B4 DE 102009032998 B4 DE102009032998 B4 DE 102009032998B4 DE 102009032998 A DE102009032998 A DE 102009032998A DE 102009032998 B4 DE102009032998 B4 DE 102009032998B4
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Abstract
Elektrisches Bauelement, umfassend: – eine Struktur (100, 1000, 2000, 3000), die einen Hohlraum (102) aufweist, der sich von einer Öffnung an einer Hauptfläche (106) der Struktur in die Struktur (100, 1000, 2000, 3000) hinein erstreckt und eine der Hauptfläche (106) gegenüberliegende Bodenfläche umfasst, wobei der Hohlraum (102) einen ersten Teilhohlraum (1021) und einen zweiten Teilhohlraum (1022) umfasst, die fluidisch miteinander verbunden sind und sich jeweils von der Öffnung bis zu der Bodenfläche des Hohlraums (102) erstrecken, wobei ein erster Teil der Öffnung die Öffnung des ersten Teilhohlraums bildet und ein zweiter Teil der Öffnung die Öffnung des zweiten Teilhohlraums bildet; – ein Kontaktelement (110, 111), das aus einem elektrisch leitenden Material (110) hergestellt ist, wobei das Kontaktelement (110, 111) den ersten Teilhohlraum (1021) vollständig füllt, die Bodenfläche des ersten Teilhohlraums (1021) bedeckt, sich durch die Öffnung des ersten Teilhohlraums (1021) erstreckt und über die Hauptfläche (106) der Struktur (100, 1000, 2000, 3000) vorsteht, wobei der zweite Teilhohlraum (1022) nicht von dem elektrisch leitenden Material (110) gefüllt ist und das elektrisch leitende Material (110) sich nicht durch die Öffnung des zweiten Teilhohlraums (1022) erstreckt, und – ein Überhanggebiet (105, 205, 305), das die Öffnung des zweiten Teilhohlraums (1022) begrenzt und den zweiten Teilhohlraum mindestens teilweise überdeckt.An electrical component comprising: a structure (100, 1000, 2000, 3000) having a cavity (102) extending from an opening on a major surface (106) of the structure into the structure (100, 1000, 2000, 3000 ) and a bottom surface opposite the main surface (106), the cavity (102) including a first part cavity (1021) and a second part cavity (1022) fluidly connected to each other and extending from the opening to the bottom surface, respectively the cavity (102) extending, wherein a first part of the opening forms the opening of the first part-cavity and a second part of the opening forms the opening of the second part-cavity; - A contact element (110, 111) made of an electrically conductive material (110), wherein the contact element (110, 111) completely fills the first part cavity (1021), the bottom surface of the first part cavity (1021) is covered by extending the opening of the first sub-cavity (1021) and projecting beyond the main surface (106) of the structure (100, 1000, 2000, 3000), wherein the second sub-cavity (1022) is not filled by the electrically-conductive material (110) and electrically conductive material (110) does not extend through the opening of the second sub-cavity (1022), and - an overhang area (105, 205, 305) that bounds the opening of the second sub-cavity (1022) and at least partially covers the second sub-cavity.
Description
Die Erfindung betrifft elektrische Bauelemente mit Kontaktelementen sowie ein Verfahren zum Anbringen eines Kontaktelements an einer Struktur.The invention relates to electrical components with contact elements and to a method for attaching a contact element to a structure.
Die nachveröffentlichte
Eine der Erfindung zugrundeliegende Aufgabe kann darin gesehen werden, die bisher bekannten Techniken zum Ausbilden von elektrischen und mechanischen Verbindungen zu bereichern.An object of the invention can be seen to enrich the previously known techniques for forming electrical and mechanical connections.
Die beiliegenden Zeichnungen sollen ein eingehenderes Verständnis von Ausführungsformen vermitteln. Die Zeichnungen veranschaulichen Ausführungsformen und dienen zusammen mit der Beschreibung der Erläuterung von Prinzipien von Ausführungsformen. Andere Ausführungsformen und viele der damit einhergehenden Vorteile von Ausführungsformen lassen sich ohne Weiteres verstehen, wenn sie durch Bezugnahme auf die folgende Beschreibung besser verstanden werden. Die Elemente der Zeichnungen sind relativ zueinander nicht notwendigerweise maßstabsgetreu. Gleiche Bezugszahlen bezeichnen einander entsprechende oder ähnliche Teile.The accompanying drawings are intended to provide a more thorough understanding of embodiments. The drawings illustrate embodiments and together with the description serve to explain principles of embodiments. Other embodiments and many of the attendant advantages of embodiments will be readily understood as they become better understood by reference to the following description. The elements of the drawings are not necessarily to scale relative to one another. Like reference numerals designate corresponding or similar parts.
In der folgenden Beschreibung wird auf die beiliegenden Zeichnungen Bezug genommen, in denen als Veranschaulichung spezifische Ausführungsformen gezeigt sind, in denen die Erfindung ausgeführt werden kann. In dieser Hinsicht werden Richtungsbegriffe wie etwa „Oberseite”, „Unterseite”, „Vorderseite”, „Rückseite”, „vorderer”, „hinterer” usw. unter Bezugnahme auf die Orientierung der beschriebenen Figur(en) verwendet. Weil Komponenten von Ausführungsformen in einer Reihe verschiedener Orientierungen positioniert sein können, werden die Richtungsbegriffe zu Zwecken der Darstellung verwendet und sind in keinerlei Weise beschränkend. Es versteht sich, dass andere Ausführungsformen benutzt und strukturelle oder logische Änderungen vorgenommen werden können, ohne von dem Konzept der vorliegenden Erfindung abzuweichen. Die folgende Beschreibung ist deshalb nicht in einem beschränkenden Sinne zu verstehen.In the following description, reference is made to the accompanying drawings which show, by way of illustration, specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top," "bottom," "front," "back," "front," "rear," etc. are used with reference to the orientation of the figure (s) described. Because components of embodiments may be positioned in a number of different orientations, the directional terms are used for purposes of illustration and are in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the concept of the present invention. The following description is therefore not to be understood in a limiting sense.
Es versteht sich, dass die Merkmale der verschiedenen hierin beschriebenen Ausführungsformen miteinander kombiniert werden können, sofern nicht spezifisch etwas anderes angegeben ist.It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise.
Die hierin beschriebenen Strukturen können auf einem Halbleiterchip angeordnet werden. Sie können als Kontaktstrukturen dienen, um dafür zu sorgen, dass elektrische Kontaktelemente an externe Anwendungen wie etwa PCBs (Printed Circuit Boards – gedruckte Leiterplatten) oder andere Arten von Chipträgern gekoppelt werden. Weiterhin können sie als Gehäuse oder Packages zum Aufnehmen von aktiven oder passiven Komponenten oder mechanischen Elementen dienen. Als ein Beispiel können solche Gehäuse zum Aufnehmen von BAW-Filtern (Bulk Acoustic Wave – akustische Volumenwelle) auf Halbleiterchips oder sogenannten MEMS (Micro-Electro Mechanical Systems – mikroelektromechanische Systeme) verwendet werden, wobei mikromechanische bewegliche Strukturen wie etwa beispielsweise Brücken, Membranen oder Lamellenstrukturen innerhalb des Gehäuses vorgesehen werden können. Solche mikromechanischen beweglichen Strukturen sind beispielsweise in verschiedenen Arten von Sensoren wie etwa zum Beispiel Mikrofonen, Beschleunigungssensoren usw. implementiert. Die hierin beschriebenen Strukturen können aus Fotolackmaterialien hergestellt sein, oder Formmaterialien wie etwa zum Beispiel Kunststoffe auf Silikon- oder Epoxidharzbasis, wie sie für die Halbleiterbauelementkapselung verwendet werden, könnten verwendet werden.The structures described herein may be arranged on a semiconductor chip. They may serve as contact structures to provide for coupling electrical contact elements to external applications such as Printed Circuit Boards (PCBs) or other types of chip carriers. Furthermore, they may serve as housings or packages for receiving active or passive components or mechanical elements. As an example, such housings can be used to accommodate Bulk Acoustic Wave (BAW) filters on semiconductor chips or so-called MEMS (Micro-Electro Mechanical Systems), where micromechanical moveable structures such as, for example, bridges, membranes or lamellar structures can be provided within the housing. Such micromechanical movable structures are implemented, for example, in various types of sensors such as, for example, microphones, acceleration sensors, etc. The structures described herein may be made of photoresist materials, or molding materials such as, for example, silicone or epoxy based plastics as used for semiconductor device packaging could be used.
Weiterhin könnten die Strukturen als Halbleiterbauelemente dienen. In diesem Fall können sie aus Halbleitermaterialien bestehen, zum Beispiel können sie Siliziumsubstrate, Germaniumsubstrate, GaAs-Substrate, SiC-Substrate, ganz oder teilweise oxidiertes makroporöses Silizium usw. enthalten. Sie können integrierte aktive Komponenten, zum Beispiel Transistoren, Dioden, bewegliche mechanische Strukturelemente, optische Detektoren oder Emitterelemente, Sensorelemente usw. enthalten.Furthermore, the structures could serve as semiconductor devices. In this case, they may be made of semiconductor materials, for example, they may contain silicon substrates, germanium substrates, GaAs substrates, SiC substrates, wholly or partly oxidized macroporous silicon, etc. They may include integrated active components, for example, transistors, diodes, movable mechanical structure elements, optical detectors or emitter elements, sensor elements, etc.
Noch weiter können die hierin beschriebenen Strukturen als Träger zum Festhalten von aktiven oder passiven Halbleiterbauelementen, zum Beispiel Chips, Widerständen, Induktionsspulen usw. dienen. In diesem Fall können die Strukturen als PCBs, dielektrische Träger, Mehrschichtträger wie zum Beispiel aufgebaute Schichten aus SBU-Laminatsubstraten (Sequential Build-Up), Zwischenträger, die oftmals als „Interposer” bezeichnet werden, Keramiksubstrate oder beliebige andere Arten von Montageplattformen ausgelegt werden, die dazu verwendet werden, aktive oder passive Halbleiterbauelemente zu montieren. Als Träger dienende Strukturen können aus dielektrischen Materialien oder aus den gleichen Halbleitermaterialien wie oben erwähnt hergestellt sein und können optional wie oben erwähnt auch integrierte aktive Komponenten enthalten. Wenn Halbleiterstrukturen als Träger verwendet werden, können sie ein oder mehrere weitere Halbleitersubstrate (d. h. „Chips”) aufnehmen, die selbst als Träger dienen können und/oder die integrierte aktive Komponenten enthalten können. Auf diese Weise kann eine Halbleiterstruktur als ein Träger zum Herstellen von kompakten, hoch integrierten SiP-Modulen (System in Package) verwendet werden.Still further, the structures described herein may serve as carriers for holding active or passive semiconductor devices, for example, chips, resistors, inductors, and so forth. In this case, the structures may be designed as PCBs, dielectric supports, multilayer substrates such as built-up layers of sequential build-up (SBU) laminate substrates, subcarriers often referred to as "interposers," ceramic substrates, or any other type of mounting platform. which are used to mount active or passive semiconductor devices. Supported structures may be made of dielectric materials or of the same semiconductor materials as mentioned above and, optionally as mentioned above, may also contain integrated active components. When semiconductor structures are used as carriers, they can accommodate one or more other semiconductor substrates (i.e., "chips") that may themselves serve as carriers and / or may contain integrated active components. In this way, a semiconductor structure can be used as a carrier for producing compact, highly integrated SiP (system in package) modules.
Bei einer oder mehreren Ausführungsformen können die hier beschriebenen Strukturen eine oder mehrere passive oder aktive Komponenten einbetten oder können lediglich die Funktion eines Trägers zum Stützen einer oder mehrerer passiver oder aktiver Komponenten (z. B. integrierten Schaltungen) aufweisen oder können sowohl eine oder mehrere passive oder aktive Komponenten einbetten und eine oder mehrere andere Strukturen stützen, die eine oder mehrere passive oder aktive Komponenten einbetten.In one or more embodiments, the structures described herein may embed one or more passive or active components, or may merely function as a support for supporting one or more passive or active components (eg, integrated circuits), or may have one or more passive ones or embed active components and support one or more other structures that embed one or more passive or active components.
Die hier beschriebenen Struktruren enthalten mindestens einen Hohlraum, der sich von einer Hauptfläche des Substrate in das Substrat hinein erstreckt. Dieser Hohlraum wird als ein Loch für eine elektrisch leitende Durchführung oder ein elektrisch leitendes Via verwendet. Elektrisch leitende Durchführungen können von einer Hauptfläche zu der anderen Hauptfläche der Struktur reichen, d. h. die Struktur durchdringen. Bei einer Ausführungsform können die Hohlräume Sacklöcher sein, die von einer Hauptoberfläche der Struktur aus verlaufen, um mit einer internen Verdrahtung der Struktur wie etwa zum Beispiel einer Metallschicht in einer Mehrschicht-PCB oder -SBU oder einer Metallschicht innerhalb einer integrierten Schaltung zu verbinden.The structures described herein include at least one cavity extending from a major surface of the substrate into the substrate. This cavity is used as a hole for an electrically conductive leadthrough or an electrically conductive via. Electrically conductive feedthroughs can from one main surface to the other major surface of the structure, ie penetrate the structure. In one embodiment, the cavities may be blind holes extending from a major surface of the structure to connect to internal wiring of the structure, such as, for example, a metal layer in a multilayer PCB or SBU, or a metal layer within an integrated circuit.
Die Hohlräume können durch verschiedene Verfahren hergestellt werden. In vielen Fällen, wenn zum Beispiel die Struktur aus einem Halbleiter- oder Lackmaterial hergestellt ist, ist Fotolithographie ein geeigneter Prozess zum Herstellen solcher Hohlräume.The cavities can be made by various methods. In many cases, for example, when the structure is made of a semiconductor or paint material, photolithography is a suitable process for producing such cavities.
Die Hohlräume in der Struktur können besonders kleine Querschnittsflächen und Abstände aufweisen. Wenn die Struktur zum Beispiel aus einem Halbleitermaterial hergestellt ist, ist es möglich, eine Hohlraumdichte auf der Oberfläche der Struktur zu erzeugen, die den seitlichen strukturellen Abmessungen eines integrierten Halbleiters entspricht, die zum Beispiel nur einige wenige 100 nm betragen kann. Wenn die Struktur aus einem Lack hergestellt ist, kann die Hohlraumdichte auf der Oberfläche der Struktur immer noch nur einige wenige Mikrometer betragen. Verdrahtungen auf beiden Seiten der Struktur können somit elektrisch zusammengeschaltet bzw. miteinander verbunden werden. Auf diese Weise wird es möglich, kurze elektrische Verbindungen zwischen Elektronikkomponenten herzustellen, die auf gegenüberliegenden Hauptoberflächen der Struktur oder innerhalb einer Struktur und auf einer oder beiden Hauptoberflächen der Struktur angeordnet sind. Folglich kann die Oberfläche einer vorbestimmten Struktur wirtschaftlich genutzt werden, und Packagegrößen können auf ein Minimum reduziert werden. Beispielsweise ist es möglich, direkte Zwischenverbindungen zwischen auf einer Hauptoberfläche der Struktur angeordneten Kontaktteilen und Chipkontakten einer integrierten Schaltung, an der die Struktur montiert ist, herzustellen. Da die Positionen der elektrisch leitenden Durchführungen auf die Positionen der Chipkontakte ausgerichtet sind, können die Durchführungen kurze Verbindungen zu den Kontaktteilen bereitstellen, damit beispielsweise schnelle Signale (z. B. HF-Signale) nach außen zu einer externen Schaltungsanordnung ohne Störungen und mit einem Minimum an Verzögerung weitergeleitet werden.The cavities in the structure can have particularly small cross-sectional areas and distances. For example, if the structure is made of a semiconductor material, it is possible to create a void density on the surface of the structure that corresponds to the lateral structural dimensions of an integrated semiconductor, which may be only a few hundred nanometers, for example. If the structure is made of a lacquer, the void density on the surface of the structure may still be only a few microns. Wirings on both sides of the structure can thus be electrically interconnected or interconnected. In this way it becomes possible to make short electrical connections between electronic components arranged on opposite major surfaces of the structure or within a structure and on one or both major surfaces of the structure. As a result, the surface of a predetermined structure can be utilized economically, and package sizes can be reduced to a minimum. For example, it is possible to make direct interconnections between contact parts arranged on a main surface of the structure and chip contacts of an integrated circuit to which the structure is mounted. Because the positions of the electrically conductive feedthroughs are aligned with the positions of the chip contacts, the feedthroughs can provide short connections to the contact parts, for example, to provide fast signals (eg, RF signals) to external circuitry without interference and with a minimum be forwarded to delay.
Das in den mindestens einen Hohlraum gebrachte, elektrisch leitende Material kann durch einen Schmelzbad-Flüssigmetallfüllprozess eingeleitet werden. Solche Schmelzbad-Flüssigmetallfüllprozesse sind preiswert und eignen sich für aus vielen verschiedenen Materialien hergestellte Strukturen. Andere mögliche Techniken zum Einleiten des elektrisch leitenden Materials in die Hohlräume sind CVD (Chemical Vapor Deposition – chemische Abscheidung aus der Dampfphase), PVD (Physical Vapor Deposition – physikalische Abscheidung aus der Dampfphase), galvanisches oder stromloses Plattieren oder Druckprozesse.The electrically conductive material placed in the at least one cavity may be initiated by a molten bath liquid metal filling process. Such molten bath liquid metal filling processes are inexpensive and suitable for structures made of many different materials. Other possible techniques for introducing the electrically conductive material into the cavities are CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), electroplating or electroless plating or printing processes.
Die
Beispielhaft kann das Substrat
Der zweite Teilhohlraum
Bei einer Ausführungsform kann das Überhanggebiet
Eine seitliche Mindestabmessung des ersten Teilhohlraums
Es wird angemerkt, dass mehrere solche zweite Teilhohlräume
Die Herstellung der ersten und zweiten Teilhohlräume
Eine zweite Maske wird verwendet, um das Gebiet, wo das Überhanggebiet
Wenn die Struktur
Bei einer Ausführungsform kann die Struktur
Weiterhin ist anzumerken, dass das Überhanggebiet
Die ersten und zweiten Teilhohlräume
Nach der Ausbildung des Hohlraums
Zum Beispiel nach dem vollständigen Füllen der ersten und zweiten Teilhohlräume
Die Fluiddynamik des verflüssigten leitenden Materials
Allgemein nimmt die Oberflächenspannung des geschmolzenen leitenden Materials
Wegen des Überhanggebiets
Die
Weiterhin können die ersten und zweiten Teilhohlräume
Das oben beschriebene Verfahren kann mit einer Reihe von Varianten ausgeführt werden. Vor dem Erhitzen kann ein Mittel zugesetzt werden, das Oxidation verhindert oder von der Oberfläche des geschmolzenen leitenden Materials
Ein geeignetes Flussmittel oder ein anderes Reduktionsmittel wie z. B. Ameisensäure oder ein Wasserstoffplasma können verwendet werden. Das Erhitzen kann in einer Inertgas-Atmosphäre oder in einem Formiergas (z. B. N2H2) durchgeführt werden, um den Aufbau einer Oxidationsschicht an der Oberfläche des geschmolzenen leitenden Materials
Die Temperatur, die zum Schmelzen und Austragen des leitenden Materials
Der Erhitzungsprozess kann im Allgemeinen in zwei verschiedenen Stadien innerhalb des Herstellungs- und Montageprozesses durchgeführt werden. Eine Möglichkeit besteht darin, den Erhitzungsprozess so durchzuführen, um den sogenannten „Ball-Attach” zu bewirken. In diesem Fall kann der Erhitzungsprozess in der Anlage des Herstellers durchgeführt werden, um eine Struktur
Als Alternative kann der Hersteller darauf verzichten, den Ball-Attach-Erhitzungsprozess durchzuführen. In diesem Fall wird die Struktur
Die
Gemäß eines Beispiels kann die Struktur
Die
In Variationen der in
Die
Über die ganze Beschreibung hinweg kann das Füllen der Hohlräume
Zuerst ist die Druckkammer
Somit ermöglicht das Anlegen eines reduzierten Drucks es demleitenden Material
Der zum Füllen der Hohlräume
Aufgrund des während des Füllens der Hohlräume
Wenngleich vorstehend ein bestimmtes Merkmal oder ein bestimmter Aspekt einer Ausführungsform der Erfindung bezüglich nur einer von mehreren Implementierungen offenbart worden sein mag, kann ein derartiges Merkmal oder ein derartiger Aspekt mit einem oder mehreren anderen Merkmalen oder Aspekten der anderen Implementierungen kombiniert werden, wie es für eine bestimmte Anwendung erwünscht und vorteilhaft sein kann. Ferner wird darauf hingewiesen, dass Elemente mit bestimmten Abmessungen relativ zueinander zum Zweck der Vereinfachung und zum leichten Verständnis dargestellt worden sind und dass tatsächliche Abmessungen von den hierin dargestellten wesentlich differieren können.While a particular feature or aspect of an embodiment of the invention may have been disclosed above in terms of only one of several implementations, such feature or aspect may be combined with one or more other features or aspects of the other implementations as may be appreciated certain application may be desirable and advantageous. It is further to be understood that elements of particular dimensions have been illustrated relative to one another for purposes of simplicity and ease of understanding, and that actual dimensions may differ materially from those set forth herein.
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US20080029850A1 (en) * | 2006-08-01 | 2008-02-07 | Qimonda Ag | Electrical through contact |
DE102008044381A1 (en) * | 2008-01-11 | 2009-07-23 | Infineon Technologies Ag | Solder contacts and method of making such solder contacts |
Also Published As
Publication number | Publication date |
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US20130082392A1 (en) | 2013-04-04 |
US8884437B2 (en) | 2014-11-11 |
US8319344B2 (en) | 2012-11-27 |
DE102009032998A1 (en) | 2010-01-21 |
US20100007016A1 (en) | 2010-01-14 |
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