DE102009008212A1 - Data processing device has material with homochiral magnetic component, where material is arranged to form crystalline structure, and crystalline structure either lacks inversion symmetry, or has interface when inversion symmetry is present - Google Patents

Abstract

The data processing device has a material (1) with homochiral magnetic component, where the material is arranged to form a crystalline structure. The crystalline structure either lacks an inversion symmetry, or has an interface when the inversion symmetry is present. A property of a topologically stable node of a spin structure (TK1 to TK7) of the material is changed for information storage and for processing information. Independent claims are also included for: (1) an information processing method; (2) a method for manufacturing a data processing device; and (3) an information reading device.

Description

FIELD OF THE INVENTION

The The invention relates generally to apparatus and methods which use the magnetic properties of materials.

BACKGROUND OF THE INVENTION

data processing is generally based on at least short-term storage of Information in the form of states. For this purpose, for example logic electronic circuits, magnetic memories (eg Hard disks in computers), permanent and volatile semiconductor memories (eg DRAMs, ROMs and EPROMs, flash memory etc.), magnetic Switches and logic electronic switching elements of semiconductor technology used. Also, electronic semiconductor circuits are as information storage in which at least in the short term information in the form stored by states.

The Magnetic properties of solids are essentially characterized in three different ways. For one in the sense of one local magnetic field (also exchange field) inside the solid state on a small length scale. Next the topological Properties of the magnetic structure. These include the chirality (handedness) and the number of turns. Finally, the magnetic stray field at the surface of the magnetic material.

In terms of a technical use of magnetic materials for information storage or Information processing focuses on three aspects. This are the life of the magnetic state, its spatial Extension, position, location and orientation as well as the possibility to change these properties in a targeted way.

Often Be used for applications where a magnetic material is used to store information, ferromagnetic materials used. It is exploited, among other things, that it is in ferromagnetic Materials for forming magnetic domains come, through so-called domain walls, ie intermediate areas, in which the magnetization direction changes. In known Information storage applications is exploited that the Size and direction as well as the location of a ferromagnetic Domain can be changed. this makes possible the writing (saving) and reading of information as well as the Logically linking such stored information.

It is generally sought, the packing density of such information storage increase, on the one hand the processing speed and on the other hand, the spatial extent of the memory and so that the storage capacity per volume can be improved should. For ferromagnetic materials must increase the packing density of the information the spatial extent be reduced. Such a reduction basically becomes limited by the extension of the domain walls. Current solutions are concentrated on it, the width of the domain walls, thus the transitions between the domains, reduce.

The The most widely used types of memory are the hard disk and the semiconductor memory. At the hard drive are using a read / write head Data written on a rotating disk with magnetizable layer and read from this. The capacity of hard drives is limited. In addition, they are exposed to wear due to the movement. Semiconductor memories include volatile memory, like the DRAM and non-volatile memory like, the EEPROM, or the flash memory. In the DRAM information is in the form of charge stored on a capacity. In the EEPROM is charge on an isolated control gate (floating gate) of a transistor applied, which changes the behavior of the transistor becomes. The ever higher packing density of semiconductor memories However, it is generally associated with high costs and pushes to ever new technological limits.

Some the problems with the aforementioned types of storage could through the use of other, newer technologies, such as MRAM, FeRAM or racetrack memories are overcome. Unfortunately, show these memories in turn pose other problems.

When Ferroelectric Random Access Memory (FRAM or FeRAM) to a non-volatile electronic storage type the basis of crystals with ferroelectric properties. ferroelectrics have the ferromagnetism analog electrical properties. The structure corresponds to that of a DRAM cell, only instead of a conventional capacitor is a ferroelectric capacitor Dielectric used. Ferroelectric materials can analogous to ferromagnetic materials a permanent electrical polarization even without an external electric field. By an external Field, this polarization can be "switched" in a different direction, what the storage mechanism of the FRAMs is based on.

In addition, there are a number of magnetic solid state memory, which are partially integrated in semiconductor technologies. This includes, for example the MRAM (magnetoresistive RAM). In this case, the fact is exploited that the electrical conductivity of ferromagnetic materials can be influenced by changing the magnetization direction. During the writing process, a thin layer is magnetized in one or the other direction by an induction field. If the memory cells are too close to each other, neighboring cells can also be influenced. Therefore, the packing density is limited.

In the so-called Racetrack-Memories, which inter alia in US 6834005 B1 . US 6898132 B2 and US 6920062 B2 described, the packing density is increased by a three-dimensional arrangement of magnetic wires. To allow access to the magnetic states, the magnetized states in nanowires are stored with an electric current for information storage. In general, this and other phenomena are exploited in that the domain walls can be changed or shifted between differently magnetized areas under the influence of spintorque (spin torque). An essential technical problem of the realization of the racetrack memories is that very high currents (typically 10 ¹² A / m ² ) are required for the displacement. This leads to heating and instability of the magnetic properties and is generally opposed to further miniaturization. Incidentally, the reading of the information is complicated and the position and position of domain walls difficult to control. A special role is played by the so-called "pinning", whereby domain walls are held in certain positions. Incidentally, in this type of memory, vortices at intersections of two or more domain walls are used to stabilize the domain walls, but this is not stable enough.

All reach known magnetic solid state memory types no sufficiently high packing density to deal with pure semiconductor memories to be able to compete.

In terms of reading and writing information in a memory or As part of a data processing, for example, the GMR (Giant Magneto-Resistance effect or the Hall effect in the read heads exploited. There are reading heads that are normal or abnormal Exploit Hall effect due to ferromagnetic properties. disadvantage the normal Hall effect is the linear field dependence, because of which it is difficult to control certain thresholds To exceed. The aim is therefore a non-linear one Dependence of the Hall voltage. This is using a ferromagnetic Material reached. Again, the relative affects large spatial extent of the domains and thus the sensor (as stated previously) negative. Another disadvantage is that the sensor itself is a ferromagnetic Has stray field at the surface. This can be the magnetic State of reading should be adversely affect.

Next The storage of information plays magnetic states also in the processing of information (arithmetic, taxes, rules, Measuring) a central role. Becoming conventional by the change from binary states to logical operations and mathematical links allows. This is the basis of all modern computer systems. An important application is the encryption and decryption of Information. A new way to handle such arithmetic operations uses the so-called quantum mechanical entanglement (English: Entanglement) of magnetic states. For this is it necessary that the states used long term are stable, which is measured by the coherence time, and can be entangled quantum mechanically. Currently Magnetic textures (domains) can not for Quantum computing can be used because they are too big and above all, are too unstable. As a result, they do not have sufficient Coherence times. Furthermore, with regard to the quantum tunnel, which should be exploited with regard to quantum computers, the magnetic domains of ferromagnetic materials too large in size (typically at least a few 1,000 Å).

since For a long time one assumes based on theoretical investigations that magnetic states develop in certain materials can be the topologically stable nodes of the spin structure represent. The center of such a topologically stable state is in principle a singular point; in extreme cases a single atom as the smallest characteristic length in solids. This theoretically creates the possibility an extremely high packing density of magnetic states. An unsolved problem, however, was the equally suspected minor Stability of the topological states, so they were not considered for technical applications were.

Even though Alternatives to existing information storage mechanisms, storage media or Electronic components have been searched for quite some time So far, no equivalent or better solution could be found be found.

SUMMARY OF THE INVENTION

According to one aspect of the present invention, there is provided a data processing apparatus comprising a component (eg, an Infor mation memory or processing unit) with a material having a homochiral magnetic component. The homochiral magnetic component is an intrinsic property of the material and should not be confused with vortex structures of conventional ferromagnets, for example, at junction points of domain walls, or systems with magnetic frustrations. To generate the intrinsic homochiral components, the material is designed in such a way that its crystal structure either has no inversion center or, in the case of crystal structures with an inversion center, an interface (for example layer formation) is formed. This exploits the fact that the interface itself has no inversion center. Further, the material is designed so that a property of a topologically stable node of the spin structure for information storage and / or information processing can be changed. This can provide smaller, more efficient, and more powerful information storage or computing devices or components, or achieve more stable, more compact, and more efficient information processing.

used magnetic states become topologically stable There are nodes of the spin structure. So it was recognized that such Conditions in materials with chiral magnetic components Check by one or more of the following measures Let: generate a magnetic anisotropy, a surface anisotropy or an interfacial anisotropy. Next is this through Applying an electric field by generating a mechanical Distortion or distortion, introducing a disorder of the crystal structure or the introduction or exploitation of defects of the crystal structure possible. Likewise comes the deliberate pollution of the chemical composition, the exploitation of a metallic behavior, a semiconducting Behavior, a superconducting behavior, an insulating behavior, a metal-insulator junction, a superconductor-metal junction, a semiconductor-metal junction, a superconductor-semiconductor junction, a temperature into consideration. In particular, the training a grid of such nodes can be achieved. Naturally Combinations of the above measures are also included Consideration. The property of the topologically stable node of the spin structure, which is changed, its existence, an orientation, a spatial location, a spatial extension, a togological number of turns and / or the chirality be.

It It was found that a topologically stable node of the Provide spin structure in several different ways and / or let manipulate. In one embodiment, the topological stable nodes of the spin structure favorably targeted by a magnetic Anisotropy generated or manipulated. In a further embodiment the topologically stable node of the spin structure can be advantageous specifically generated by a surface anisotropy or be manipulated. In a further embodiment, the topological stable nodes of the spin structure favorably targeted by an interfacial anisotropy be generated or manipulated. In a further embodiment the topologically stable node of the spin structure can be advantageous be selectively generated or manipulated by an electric field. In a further embodiment, the topologically stable node the spin structure favorably targeted by a disorder of the crystal structure be generated or manipulated. In a further embodiment the topologically stable node of the spin structure can be advantageous can be selectively generated or manipulated by an impurity. In a further embodiment, the topologically stable node the spin structure advantageously generated specifically by a defect or manipulated. In a further embodiment, the topological stable nodes of the spin structure favorably targeted by a metallic Behavior generated or manipulated. In another embodiment the topologically stable node of the spin structure can be advantageous targeted by a metal-insulator transition at a boundary layer, a superconductor metal transition at a boundary layer, or a temperature, the crystallization of many nodes to one Grid and / or a combination of some or all of the above Measures are generated and / or controlled.

It It was recognized that magnetic structures similar to homochiral components how ferromagnetic domains can be used. Second, possibilities were found, magnetic states in the form of topological nodes of the spin structure much more stable as domain states and domain walls ferromagnetic or antiferromagnetic materials. Furthermore is the extension of the topologically stable nodes of the spin structure due to their inherent properties smaller than that technologically relevant states in conventional magnetic materials. The inventively selected or designed materials can then just as before soft ferromagnets are used, giving them a higher Packing density and due to their improved manipulability also allow a variety of other improved properties of memories.

It should be noted that when using the stray fields, the topological property can be advantageously used to provide stability. In the topological Hall effect described below and in quantum computing actually the actual topology properties (turns and chirality).

It thus become topological, intrinsic properties of the material exploited, which was recognized that these in the sense of ferromagnetic materials can be used. In addition, based the invention based on the finding that certain groups of materials spontaneously or by specific processing (for example in thin layers and / or micro- and / or nanostructuring) a partial homochiral Have structure that are used as an information store can. In contrast to known information stores, in particular ferromagnetic materials, owns the information store basically no spatial extension anymore.

The Material exhibits an intrinsic magnetic order of which at least one component has an inherent handedness (Chirality) possesses.

Advantageous become materials with magnetic order that are purely left-or right-handed is used. For information storage It is advantageous if the sense of rotation in this sense excellent is. Otherwise, the direction of rotation of the center could be of the vortex in applications where this sense of rotation directly exploited is such as the topological Hall effect described below or the Quantum computing, not clearly determine and appropriate applications would not be possible.

So According to one aspect of the invention, a Hall sensor with the invention prepared and material used that is nonlinear Voltage dependence of an external magnetic field has however, it is not ferromagnetic itself, since the topologically stable node in principle represents an antiferromagnet.

In another device becomes the topologically stable states in the sense of atoms, ie quantized units, for the creation entangled states for quantum computing used because it was recognized that these topological states are durable enough. Behind this is the realization that the topological stable node can be made so small that one quantum mechanical entanglement is possible. This may be significant for certain numerical algorithms for example, the decryption encrypted Accelerates records or even made possible. According to this aspect of the invention is thus a togological quantum computer provided in which the information storage is made by means of a material of the type described.

According to others Aspects of the invention may advantageously be material classes can be used, which arrange magnetically or at the limit of the magnetic Order, the magnetic order being excellent Has handedness. That means the magnetic Order is either purely left or right-handed. Such materials may spontaneously form in the form of crystalline substances occur. In addition, you can the desired properties on surfaces or Interfaces occur. Therefore, the present invention provides the opportunity ready to spin structures with topological to make stable node-based information stores targeted. By Arrangement in surfaces or interfaces specifically suppresses the inversion symmetry.

The Invention is also based on the recognition that the Homochirality a consequence of structural asymmetry the spin-orbit coupling is. By competition from spin-orbit coupling and exchange interaction can be targeted topologically stable Nodes of the spin structure are generated.

The material may be a material that lacks inversion symmetry, at least with respect to a local atomic or molecular group. In particular, the material may be a compound of elements of the transition metals such as iron, cobalt or manganese, or elements of the rare earths with elements such as silicon, germanium or aluminum. Advantageously, the material may be a stoichiometric compound such as manganese silicon (MnSi) or a mixed compound such as Fe _1-x Co _x Si or FeSi _1-x Ge _x .

The Material can advantageously be arranged in a layer. The Strength of the layer can be about one atomic layer, thereby to form small structures. On the other hand, the layer also have a thickness of a few nanometers to one to provide increased stability. Also a layer with a thickness of a few nanometers has at its interface the desired homochiral vortices (topological nodes) when it is designed or prepared in the manner described above is.

The Material may advantageously be a nano- or microstructured system be that includes some atoms, thereby targeting electronic Have components manufactured. This can be a group of some Atoms or a small surface or a wire that is at least in a lateral dimension is a few atoms wide.

The material may essentially be or include an interface. The material may also comprise only one atomic layer or a few atomic layers at an interface. The material can also be a layer of a few nm thickness of egg ner interface.

Further a method of storing information is provided. This method involves manipulating a material with homochiral magnetic component. The material has a crystal structure which either lacks an inversion center or the material has an interface for information storage can be used. Next, a topologically stable node of Spin structure of the material used for information storage, for example, the existence, orientation, location, spatial Expansion, topological properties such as number of turns or chirality is changed.

The Manipulate the properties of the topologically stable node The spin structure can be created either by applying an outer Magnetic field, an external electric field, by applying alternating electromagnetic fields, by applying a electric current or generating a mechanical strain material or a combination of these measures.

The Reading stored information or writing information can be done by at least one of the following steps: Influencing the transport characteristics of the material, changing of the resistance as a function of the magnetic state of the material, artificial creation of interfaces, which influences the resistance of the material, affecting it the mechanical properties of the material, exploiting a magnetoelastic Effects, changing the elastic constants, in particular the Moduli of elasticity by changing magnetic properties, influencing the thermodynamic properties of the material, the exploitation of a magnetocaloric effect and / or the exploitation a thermoelectric effect, in particular by design as a Peltier element.

The Invention also provides a method of manufacturing a data processing device, where there is arranged a material for storing information of the data processing device becomes. The crystal structure of the material lacks an inversion center or the material is arranged in a thin layer, or forms an interface or a micro- or nanostructured system, in which the desired topologically stable nodes adjust the spin structure. The device is set up a property of a topologically stable node of the spin structure in the information storage or processing material. There are in particular methods of semiconductor technology and, for example. Also, micro- or nanostructuring method to a inventive Device to produce. The vortexes (topological nodes) can stabilized by introducing a targeted disorder in the material. The strength of the anisotropy of the material can be exploited be used to generate topologically stable nodes of the spin structure and / or destroy. The chiral interactions can be through magnetic frustrations or competing interactions supported become. In the context of the manufacturing method according to the invention can be the topologically stable nodes of the spin structure stabilized by disorder of a few parts per million (ppm) become. In the context of the manufacturing method according to the invention it may also be necessary for special requirements topologically stable node of the spin structure due to disorder of to stabilize up to a few percent. The required level of Pollution can be detected by experiments and hangs from the specific requirements of each application. In the context of the manufacturing method according to the invention can be the topologically stable nodes of the spin structure usually by defects and impurities of only a few be stabilized ppm. The device can in a further embodiment be set up so that the topologically stable node through the transition between metallic, semiconducting, insulating and / or superconducting material. In the inventive Generally, the method can be the strength of the anisotropy exploited to topologically stable nodes of the spin structure to create and / or destroy. According to one Another aspect may be the chiral interactions magnetic frustrations are supported.

In an advantageous embodiment of the invention, a data processing device may include a memory that is configured similar to a racetrack memory. In this case, it can be exploited that the topologically stable nodes of the spin structure have only a small pinning to the crystal structure, that is to say they can easily be shifted with low current densities of, for example, a maximum of a few 10 ⁶ A / m ² or lower current densities.

The Data processing device can then be designed in such a way that the topologically stable nodes of the spin structure by electrical currents, electromagnetic radiation fields, stray fields at tunnel or Force microscopes or mechanical tension can be moved.

The size of the topologically stable nodes of the spin structure can be influenced by the relationship of the exchange interaction to spin-orbit coupling and other interactions. Additionally, it may be due to frustration and / or competing interactions to be influenced.

The Manufacturing process in the form of thin layers (for example Vapor deposition, sputtering, Pulsed Laser Deposition (PLD), Molecular Beam Epitaxy (MBE)) is relative easy and inexpensive. By using these methods is a good control of the composition, interfaces and purity possible. It can by the mentioned and others technically common procedures are accomplished. by virtue of The high packing density can further increase the processing speed of information (eg data throughput) significantly increased become.

According to one Another aspect of the invention is a method of storage provided by information. The process becomes a material with homochiral magnetic component for information processing used, wherein the crystal structure of the material lacks an inversion center or at an existing inversion center, an interface the material is used for information storage. This For example, it can also be used in micro- or nanostructured systems be achieved.

According to one Aspect of the invention is for information processing or storage a property of a material with homochiral magnetic order changed or manipulated. The material has a crystal structure which either lacks an inversion center or the material has an interface. The material can be a thin layer represent. The altered property of the material can then advantageously changing a property of a topological stable node of the spin structure of the material. This change of the topological node is used for information processing and / or storage used. For example, the existence, orientation, Location, spatial extent, topological property, such as Winding number and / or chirality, the topologically stable Knotens are changed.

According to others Aspects of the invention may include a method of processing information encompass and exploit the above aspects, that the topologically stable nodes of the spin structure of the material are entangled quantum mechanically.

According to one Another aspect of the present invention is the material with homochiral magnetic component in a particularly high purity provided or provided. This allows the necessary Current densities to change the magnetic properties be significantly reduced. Inducing anisotropy to generate or stabilize the topological nodes is thereby also more targeted possible.

BRIEF DESCRIPTION OF THE FIGURES

Further advantageous aspects of the invention will become apparent from the following Description of the preferred embodiments based the attached figures, wherein

1 3 shows a spatial representation of the spin arrangement of topological nodes in a material prepared according to the invention,

2 shows a functionally schematic representation of an information storage according to an embodiment,

3 a simplified representation of a further embodiment of the invention,

4 a simplified representation of a further embodiment of the invention,

5 a simplified representation of a further embodiment of the invention,

6 a simplified representation of a further embodiment of the invention,

7 a simplified representation of a further embodiment of the invention,

8th a simplified representation of a further embodiment of the invention,

9 shows a simplified representation of an embodiment of the invention,

10 a simplified representation of a further embodiment of the invention,

11 shows a simplified representation of an information store according to an embodiment,

12 shows a simplified representation of an information store according to an embodiment,

13 shows a simplified representation of an information store according to an embodiment, and

14 a simplified representation of a read head according to an embodiment shows.

DETAILED DESCRIPTION THE EMBODIMENTS

1 shows a spatial representation of the Spin arrangement in a material according to the invention 1 , A total of seven topologically stable nodes of the spin structure TK1 to TK7 are shown. According to aspects of the invention, the properties of the center Z of a node are exploited. In the center, the spins point into the image plane, which is indicated by an arrow in the center. The center Z of the node TK4 is clearly shown enlarged again. The section may have dimensions L1, L2 between a few hundred atoms to a few atoms. The extent of a vortex (topological node) depends on the material used and other conditions, such as mechanical or electrical interference and magnetic anisotropy.

Of the total of 230 space groups occurring in nature, materials from 65 space groups may exhibit the topologically stable nodes shown. A relevant example is the space group 620. Here, as a topologically stable structure, a vortex thread (skyrmion) emerges from the in 1 only the uppermost layer is shown. Within the center, the spins point roughly in the same direction. Whether the spins point in or out of the image plane can be controlled by the direction of an external magnetic field. Therefore, the center can be used like a soft ferromagnet. In addition, it is possible to control whether the vortex structures (topological nodes) actually occur. For this purpose, some application examples are explained below. The topological properties of the vortex structures (topological nodes) also cause a Hall effect (this is called a topological Hall effect and differs from the normal and anomalous Hall effect), which can also be exploited. Above all, the very small dimensions of the vortex center and the easy displaceability and changeability of the orientation of the topological nodes are advantageous.

2 shows a highly schematic representation of an information storage cell or information sensor cell (eg., Read head), in which the topological node of the spin structure is used according to the invention. Basically, at least two types of stimulation can be used. Turning the node on and off with a first ON / OFF stimulus. The second option is to write using an IWRITS stimulus as soon as the node is turned on. Finally, information can be read out by means of IREAD, in which case either the state of the existing center of the node or the circumstance whether it exists can be output as information.

following some advantageous embodiments will be described. These can be produced by known methods, as they are known from semiconductor technology. Especially are methods of forming layers such as chemical or physical Deposition method (CVD, PVD), sputtering, growth and doping or targeted contamination of layers can be used. Come on Pulsed laser deposition (PLD) or epitaxial methods such as Molecular Beam epitaxy (MBE). In particular, the following can Embodiments advantageous as micro- and / or nanostructured Systems are provided.

3 shows a schematic representation of a possible structure of an information processing or memory cell according to an embodiment of the invention. The layer sequence comprises an electrode E1, an electrical insulator IS1, a material layer comprising the topological nodes TK (at least one), a further electrical insulator layer IS2 and a second electrode E2. The electrode E2 is opposite to the electrode E1. The electrodes E1, E2 serve to generate an electric field through the material according to the invention 1 (TK) build up. In this case, the state or existence of the topologically stable nodes (TK) is controlled by means of a voltage at the electrodes. For example, when a specific voltage U1 is applied, the material layer can be 1 be influenced so that at least one topologically stable node is formed. In another embodiment, the existence of the topological nodes may be due to inherent material properties of the material 1 to be provided. In this regard, targeted impurities, anisotropies or even mechanical influences (for example, stressing of the material layer) come into consideration. For writing or reading information, a property of the topologically stable node is then used (for example magnetization direction, expansion, position, existence). For example, this property is changed for writing, and the change is then read out. In another embodiment, the writing of information may be accomplished by having a node TK in the material 1 is shifted by applying a current. In another embodiment, the formation of a grid may be controlled by topological nodes by applying a voltage. The dimensions of the insulator are preferably very small, for example, they are only a few nanometers or less. The electrodes may be made similar to the electrodes of commercially available transistors. In particular, metallic materials such as aluminum come into consideration in this regard.

4 shows a further simplified embodiment of the invention. Again, two electrodes E1 and E2 are provided, between which in turn two insulator layers IS1, IS2 and the material layer 1 is provided with the topologically stable node TK. In addition, an intermediate layer IM is provided, which in this exemplary embodiment lies between the material layer 1 with the topologically stable node TK and the isolator IS2. This intermediate layer can be advantageously used to form the nodes TK in the material layer 1 to control and / or stabilize. In a first embodiment, the intermediate layer IM may consist of a superconductor or superconducting material. Optionally, this may not be centrosymmetric. In another embodiment, the intermediate layer IM may be a metal. For example, aluminum is considered here again. In a further embodiment, the intermediate layer IM could also be between the insulator IS1 and the material 1 be arranged with the topological node TK. For this arrangement then the material layer would be 1 advantageously embedded in two intermediate layers IM. The control of the material, ie the generation or modification of properties of the nodes TK can then take place either by means of the electrodes E1, E2 or by means of the intermediate layer IM or intermediate layers IM. In particular, control by means of an electric field, a current or a field-induced mechanical stress (through the electrodes E1, E2) and the temperature by means of the intermediate layer IM is considered here. The intermediate layer IM can also be an electrically conductive material with a high resistivity, whereby a targeted local heating of the material 1 achieved with the topological nodes. In the latter embodiment, the control of the nodes would then take place due to the change in temperature. Another important aspect is that the interface between the intermediate layer IM and the topological node layer is causally responsible for the formation of topological nodes.

5 shows a simplified schematic representation of another possible embodiment of an information storage or information processing cell according to the invention. Here are now the electrodes E1 and E2 directly on the material 1 applied with the topological node TK. The material layer 1 can be insulating or electrically conductive. In particular, it may be in the material layer 1 also be a material designed to additionally act like a tunnel element of a GMR element. In order to influence the properties of the nodes then optionally currents I1, I2 of electrode E1 to the electrode E2 or in the reverse direction into consideration. Likewise, a current I1 can pass directly through the material 1 sent, for example, to move the nodes. This arrangement can be exploited in the context of a read head for scanning finest magnetic fields (for example in hard disk storage). The change of the properties of the topological node TK in the material 1 would interact with current flow I2 to I3. I1 and I2 can be the same size or different size, depending on the properties of the node. In particular, applications for Hall sensors are also considered here. This would be due to the current flow and the properties of the material 1 or the node arranged there can form voltages perpendicular to the current flow. These could in turn be read out or further processed.

6 shows a further simplified illustration of an embodiment of the invention. This is an arrangement such as might be used for quantum computers. In this simplified example, only eight electrodes E1 to E8 are provided, which face each other in two groups of four electrodes each. Of course, this principle can be extended to any number of electrodes and nodes TK. Between the electrodes E1 to E4 and E5 to E8 is in each case a node TK1 to TK4. The electrodes now control the property of the nodes. The electrodes would have to be made small enough and close enough to each other to allow a quantum mechanical entanglement. The material layers MS1 and MS2, which are arranged between the electrode group E5 to E8 and the nodes TK1 to TK4, could preferably adopt the properties of GMR elements in interaction with the nodes TK1 to TK4.

7 shows a simplified illustration of another embodiment of the invention. This is an arrangement such as might be used in a racetrack memory. The material of the invention 1 with the topologically stable nodes is used in a three-dimensional arrangement. By means of a current I, the nodes TK by material 1 (For example, as a nanowire) are pushed. The electrodes E1 and E2 serve as a writing element, while the electrodes E3 and E4 are used as a reading element. As described above with respect to the other embodiments, the alignment or existence of a node TK can be changed by applying a voltage across the electrodes E1 and E2 in the write element and read out by means of the electrodes E3 and E4 in the read element. In a modified embodiment, the electrodes can also be used to bring about or control the so-called pinning of the topological nodes.

8th shows a further embodiment of the invention in a schematic representation. in this connection it is an arrangement that can act in the nature of a GMR element and has several TK layers TK1, FM, TK2, AFM. FM is a layer of ferromagnetic material and AFM is a layer of antiferromagnetic material. In particular, a GMR element is extended by layers with topological nodes to influence the tunneling current and / or to elegantly control the magnetic properties of the FM or AFM layer.

9 shows a further embodiment of the invention in a schematic form. The material of the invention 1 this could be insulating (shown here as layers TKIS1, TKIS2) and arranged in a layer sequence TKIS1, metal, TKIS2. The arrangement could be used in the manner of a transistor, the current flowing through a metallic layer ME by controlling the material layers TKIS1, TKIS2.

10 shows another embodiment of a racetrack memory according to the present invention. Here are layer sequences of the invention prepared and used material 1 and a layer sequence similar to a GMR element as shown in FIG 8th is shown used. These are arranged between the electrodes E1 to E4 and E5 to E8, with two electrodes facing each other in pairs.

11 shows a simplified representation of an information storage according to another embodiment. This embodiment relates to the embodiment according to an MRAM. A sequence of layers of the material 1 , an insulation layer 2 and a solid polarized material 3 and an antiferromagnetic layer 4 together forms a memory cell MZ. This is described and read with the aid of an NMOS transistor NMOS1. The essential effect is that the magnetization direction of the material 1 (which is indicated by an arrow) can be easily changed by an external field. When the layers 1 and 3 are magnetized in the same direction, the resistance of the memory cell MZ is low. With opposite magnetization (as in 10 shown), the resistance is correspondingly high. In this way, binary information can be stored permanently. For this purpose, a bit line BL, a word line for writing WWL and a word line for reading RWL are provided. The cables BL, WWL and RWL are made of metal, as well as the contact 5 between layer 4 and drain or source contact of the NMOS transistor NMOS1. The transistor is turned on by applying a positive voltage to the read line RWL. The voltage drop across the memory cell MZ indicates the stored information. For writing, the word line WWL is used and set to an increased potential. By a current flow in the bit line can then be the polarization of the invention prepared and used material 1 be changed.

12 shows a simplified representation of an information memory according to an embodiment, this embodiment relates to an embodiment as Racetrack memory. A memory line LM has local memory areas S1, S2, .., SY, SX, .., SN. These can be changed by a writing device W in its magnetization direction. In a reading device R, the information is read out. It is crucial that the areas S1, S2, .., SY, SX, .., SN can be pushed by means of a current I1 (current pulse) through the line memory LM. In contrast to conventional racetrack memories, when using the material prepared according to the invention according to the invention 1 for the line memory LM a shift already done with very small current pulses. Likewise, the description, ie the change in direction of the vortex structures in the areas S1, S2, .., SY, SX, .., SN can be changed without large currents I2. So only a small current can be sent through the conductor L1 to make a reprogramming. Accordingly, by way of example, the regions SY and SX are highlighted, which have a different direction of magnetization (made clear by hatching). The reading can be done in the writing device R by taking advantage of the tunnel effect. For this purpose, a pre-magnetized layer and an insulating layer are attached. Then, a current is sent through the conductor L2 and read out via the conductor LM. If a biased layer is in the same direction as the region SR to be read, then there is little resistance. In the reverse magnetization direction, the resistance is high.

13 shows another embodiment of an information store according to the present invention. In the 13 The arrangement shown relates to a simplified embodiment of a core memory. The memory cell MZ in turn has three layers of the material prepared according to the invention 1 , an insulating layer 2 and a premagnetized material 3 with fixed polarization. The lines L1 and L2 are perpendicular to each other on the top and bottom of the memory cell MZ. The conductors are supplied with a potential VY and a current IV or a current IX and a voltage VX. Due to a potential difference between the conductors L1 and L2, a remagnetization of the layer with the material 1 respectively. To read the information (similar to Racetrack before for the execution example according to 12 described), a current IX is given by the conductor L2 and measured via the conductor L1.

14 shows an embodiment of a read / write head of a hard disk according to aspects of the invention. For hard drives, a disc DISK rotates with magnetizable areas (bits B). The read / write head manipulates the direction of magnetization of bits B for writing. For reading, the magnetization direction must be scanned by the read / write head. In this case, the so-called giant magnetoresistance effect (GMR) is utilized in conventional read / write heads. According to the inventor of this technique, these read / write heads are also referred to as Grünberg read / write heads. The head has three layers, one of which is easily magnetizable, one intermediate layer insulating and the third layer is hard magnetic. The easily magnetizable layer is continuously magnetized alternately by the passing bits, which changes the resistance of the layer sequence. This resistance change is evaluated.

A read / write head according to the present embodiment of the invention requires only one layer or a material 1 that in 1 having shown vortex structures. Due to the topological property of the vortex, a comparatively large Hall voltage is generated at very small dimensions. In addition, the vortex centers can be easily changed in their magnetization direction. By the electrodes E1 and E2 so could a very low current through the material 1 sent. Electrodes E3 and E4 which are arranged laterally of the material can then depending on the direction of magnetization of the material 1 pick up a corresponding Hall voltage, which is then evaluated. The dimensions of the material 1 are extremely small and contain only a few atomic layers. As a result, only a single vortex center Z is formed according to FIG 1 out.

In an advantageous embodiment, the invention can be for applications based on the Hall effect. For example, there are Hall sensors that rely on the anomalous Hall effect based on the ferromagnetic properties. A Hall sensor could then comprise a previously described material, that has a crystal structure that lacks either inversion symmetry, or in the presence of inversion symmetry, an interface having. This material is arranged so that a property a magnetic vortex structure in the form of a topologically stable node the spin structure of the material is used. This will be topological Hall voltages from a few microvolts to a few tenths of a volt generated. The lifetime of topologically stable nodes does not have to be can be longer than for the read, but can also be unlimited in time.

One Another advantageous application for the present The invention relates to giant magneto-resistance elements (giant magneto-resistance elements, GMR), as proposed by Grünberg and Fert. In the data processing often come combinations of ferro- and antiferromagnetic materials used in the GMR tunnel effect is exploited.

A Further possible use of the invention is exploitation the magnetic states. Data processing is complete generally in the use of magnetic states. The Whole modern data processing is still based on binary States, sometimes also more than two states be encoded. This is also the relevant limit conventional data processing. This is to be overcome by means of quantum computers become. States are entangled quantum mechanically, whereby much higher state densities are achieved. The However, the problem currently is that the life of the states, which are crossed, too small. This lifetime we are expressed by the so-called coherence time. in in all known cases, it was not more than a few milliseconds. By using topologically stable nodes the spin structure can in principle arbitrarily increase the lifetime because the states are characterized by their topological properties protected from decoherence phenomena. The material is prepared as described above, arranged and used. In particular, the togologically stable Node of the spin structure can be arranged so that it becomes a quantum mechanical Entanglement can come. This is for as possible compact spatial removal of the case. Advantageously its a distance smaller than the extent of the knot. An arrangement that is larger can also be advantageous is like the typical extent of the nodes. The nature of the condition of a node (ie orientation, chirality, position and Expansion) then hangs in the entangled state from the state of one or more other nodes. The reading of the entire state may be in the same manner as described above respectively.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• US 6834005 B1 [0011]
• US 6898132 B2 [0011]
• US 6920062 B2 [0011]

Claims (10)

Data processing apparatus comprising: one Material with homochiral magnetic component, wherein the material is designed to have a crystal structure that either an inversion symmetry is absent, or with inversion symmetry present to have an interface such that a property a topologically stable node of the spin structure of the material for information storage and / or information processing is changeable. Data processing device according to one of the preceding Claims, wherein the material is the inversion symmetry, at least one local atomic or molecular group is missing. Data processing device according to claim 1 or 2, wherein the material is a compound of elements of the transition metals such as iron, cobalt or manganese with elements such as silicon, germanium or aluminum. A data processing apparatus according to any preceding claim, wherein the material comprises rare earth elements and / or a stoichiometric compound such as manganese silicon (MnSi), or a mixed compound or doped material such as Fe _1-x Co _x Si, FeSi _1-x Ge _x . Data processing device according to one of the preceding Claims wherein the material is arranged in a layer whose strength is about one atomic layer. A method of processing information comprising: change a property of a material with homochiral magnetic Order, wherein the material has a crystal structure, the either an inversion center is missing, or the material has an interface or a thin layer, wherein the altered Property of the material a property of a topologically stable Knotens the spin structure of the material. The method of claim 6, wherein changing either by applying a magnetic field, an electric field, an alternating field, an electric current or by generating a mechanical tension or a combination of these measures he follows. Method of manufacturing a data processing device, wherein a material for storing information in the data processing device and a crystal structure of the material is an inversion center missing or the material is arranged in a thin layer is or has an interface, and an arrangement is provided that is set up to be a property of a topological stable node of the spin structure in the data processing material to change. The method of claim 8, wherein the topological stable node of the spin structure due to disorder of some parts be stabilized per million (ppm). Device for reading information, which has a Includes reading head, in which a material is arranged, which is an inversion center missing or that is arranged in the thin layer to to have an interface, and the arrangement designed is to have at least one topologically stable node in the material to form the spin structure and one of this topological node caused Hall effect to determine the orientation of an outer Magnetic field is used.