DE102008051050A1 - Opto-electronic semiconductor module for e.g. projection application, has semiconductor segments characterized by operating voltages, where one of voltage range includes weighted sum of natural numbers with different voltage ranges - Google Patents

Abstract

The module has a set of opto-electronic semiconductor elements (1, 2, 3) i.e. LED chip, each with semiconductor segments (5, 6, 7) connected in series for radiating electromagnetic radiations. The semiconductor segments are characterized by segment operating voltages that are connected in series define an operating voltage of the opto-electronic semiconductor elements. The operating voltages lie within a voltage range or within one of a group of preset voltage ranges, where one of the voltage ranges includes the weighted sum of the natural numbers with different voltage ranges.

Description

The The invention relates to a module with optoelectronic semiconductor elements.

Optoelectronic Semiconductor elements are used for used a variety of different lighting applications. they offer especially when a high luminous efficacy on a small Space is required. Examples of the use of optoelectronic Semiconductor elements are found in projection applications and also in the automotive sector, there among other things in the use of headlights.

at Circuits with optoelectronic semiconductor elements, which in different Color radiate become the different colored semiconductor elements controlled with separate driver components. The driver components represent the different operating voltages and powers for the differently colored ones Semiconductor elements ready.

According to the invention is a Module provided with optoelectronic semiconductor elements, each Optoelectronic semiconductor element of the module connected in series comprises semiconductor segments suitable for the emission of electromagnetic radiation. Each semiconductor segment is characterized by a segment operating voltage. The segment operating voltage of the series connected semiconductor segments essentially determines an operating voltage of the optoelectronic Semiconductor element. The operating voltages of the optoelectronic Semiconductor elements are within a voltage range or within a voltage range of a group of predetermined voltage ranges, where one of the voltage ranges is the sum of natural Includes numbers weighted other voltage ranges.

at The first alternative is the operating voltages of the semiconductor elements equal or in a single voltage range, that the semiconductor elements in a cleavage arrangement in parallel switchable are.

at The second alternative is the operating voltages of the semiconductor elements distributed such that a series circuit of semiconductor elements in parallel can be switched to a further semiconductor element. The sum of Operating voltages of the series-connected semiconductor elements equal to the operating voltage of the further semiconductor element. The Operating voltage of the further semiconductor element is the same with natural Numbers weighted other operating voltages. The natural numbers are 0, 1, 2, 3, 4, ....

following Example may clarify the second alternative. An embodiment comprises a first semiconductor element with an operating voltage of approximately 2 volts, a second semiconductor element with an operating voltage of about 4 volts and a third semiconductor element with an operating voltage of about 6 volts. A series connection of the first and the second semiconductor element could be switch parallel to the third semiconductor element. The operating voltage of the third semiconductor element is the sum of the operating voltages the other semiconductor elements. The summands are respectively weighted with 1.

One another embodiment comprises a first semiconductor element with an operating voltage of approximately 2 volts, a second semiconductor element with an operating voltage of about 8 volts and a third semiconductor element with an operating voltage of about 12 volts. The series connection of two first semiconductor elements and a second semiconductor element could be parallel to the third Switch semiconductor element. Its operating voltage is the sum the operating voltages of the other semiconductor elements. At the summation the operating voltage of the first semiconductor element is weighted by 2 and the operating voltage of the second semiconductor element is weighted by one.

One such voltage-matched set of optoelectronic semiconductor elements allows it to build circuit arrangements, so they with a same supply voltage can be operated, giving space, effort and Cost saving is.

One embodiment a semiconductor element is a chip with a semiconductor body. An embodiment a semiconductor element is a semiconductor device. In one Embodiment are provided as semiconductor segments chips or semiconductor body.

In In one embodiment, the optoelectronic semiconductor elements differ with regard to their radiant electromagnetic radiation, so that emitted by a combination of the semiconductor elements Radiation superimposed become.

In In one embodiment, the semiconductor segments of a semiconductor element same segment operating voltages, so that the operating voltage of Semiconductor element is a multiple of the segment operating voltage.

In one embodiment, with a first optoelectronic semiconductor element, whose semiconductor segments connected in series each have a first segment operating voltage, and a second optoelectronic semiconductor element, whose series-connected semiconductor segments each have one second segment operating voltage, the predetermined voltage range comprises a common multiple of the first and second segment operating voltage. The common operating voltage of both semiconductor elements is determined by the different number of semiconductor segments. The operating voltage divided by the segment operating voltage is the number of segments required for the operating voltage.

advantageously, The semiconductor elements differ in color the light they emit. The semiconductor elements can be combine to create a mixed color.

Around white Light to be mixed, are advantageously optoelectronic semiconductor elements in the colors red, green and blue combined. Alternatively, optoelectronic Semiconductor elements in the colors white-green and red, especially deep red, used become warm white To mix light. white Light sources can for one General lighting or a display backlight used become.

The Semiconductor segments in one embodiment comprise an active layer, which is suitable for emitting electromagnetic radiation. In In one embodiment, the semiconductor segments differ from one another Semiconductor elements and / or the semiconductor segments of a semiconductor element in terms of their nature and / or their dimensions.

By The dimensioning of the semiconductor segments can also be achieved with different current efficiency set the desired overall color tone for the various segment types, as illustrated below. A first semiconductor segment, the emits a first color, but less power efficiency has as a second semiconductor segment, which is a second color radiates, radiates in an embodiment in which the first and the second semiconductor segment are the same size, with less intensity from. However, if the first semiconductor segment is larger than that second, lets the intensity difference compensate.

Semiconductor segments different types differ for example by the used material system or the type, thickness or structure of Wavelength conversion layers, the above the active, emitting layer are arranged. The wavelength conversion layer affects the spectrum of the light emitted by the active layer.

Consequently is the design of the semiconductor segments a suitable means to the radiated radiation in terms of its spectrum, but also in terms of their intensity to influence.

A execution of the module with the optoelectronic semiconductor elements Advantageously, a first optoelectronic semiconductor element and a second optoelectronic semiconductor element which is parallel are switched. Due to the same operating voltages of the semiconductor elements this type of interconnection is possible.

In an alternative embodiment is a first optoelectronic Semiconductor element in parallel with a series circuit of semiconductor elements with connected at least a second semiconductor element. The series connection For example, two semiconductor elements may be different or the same Type include. The optoelectronic semiconductor elements have different Operating voltages chosen such that the parallel connection can be combined with the series connection.

at a space and cost efficient design are the semiconductor elements in a housing or on a carrier plate, a so-called board.

advantageously, a common driver component is provided for the semiconductor elements, which allows the semiconductor elements arranged in parallel at the same time head for. It is no longer necessary that different driver components for the various semiconductor elements are provided.

In In one embodiment, the semiconductor elements of the circuit arrangement dimensioned and arranged so that the mixture of the radiated Light of the optoelectronic semiconductor elements is white.

In order to the color caused by the combination of semiconductor elements is emitted even during the aging process of the semiconductor elements or under the influence of temperature not changed, have the optoelectronic semiconductor elements a similar aging or Temperature behavior.

In one exemplary embodiment, the series connection of the semiconductor segments is effected by conductive connections on the side of the optoelectronic semiconductor segments which faces away from a radiation passage area. The contacting of the semiconductor segments takes place on the side facing away from the radiation passage area side by contact layers which overlap at least partially. The contact elements for contacting the elements are provided on the side facing away from the radiation passage surface side of the semiconductor segments, while the contact can be made on the back or in the side region of the semiconductor segments. The contact elements are with the contact layers connected or accessible areas of the contact layers. Thus, the series connection of the semiconductor segments within the semiconductor elements is realized by a conductive connection of the contact elements, which are located on the side facing away from the radiation passage surface of the radiation-emitting layer.

in the The invention will be explained with reference to drawings.

It demonstrate:

1 an embodiment of a set of optoelectronic semiconductor elements,

2 Another embodiment of a set of optoelectronic semiconductor elements,

3 An embodiment of a circuit arrangement with optoelectronic semiconductor elements,

4 Another embodiment of a circuit arrangement with optoelectronic semiconductor elements,

5 An embodiment of a circuit arrangement with optoelectronic semiconductor elements,

6A . 6B each a schematic sectional view according to an embodiment of an optoelectronic semiconductor element,

6C . 6D each equivalent circuit diagrams of the embodiments in the 6A respectively 6B .

6E . 6F each plan views of an optoelectronic semiconductor body divided into four sub-areas corresponding to the sectional view and the equivalent circuits of 6A to 6D and

7 a sectional view of an optoelectronic semiconductor element according to another embodiment.

1 shows an embodiment of a set of optoelectronic semiconductor elements 1 . 2 . 3 ,

A first optoelectronic semiconductor element 1 is designed as an LED chip. The first chip 1 includes two series-connected semiconductor segments 5 having an active layer for emitting electromagnetic radiation. The first chip 1 is designed to emit green light.

Furthermore, there are two contacts 4 for contacting the chip 1 intended.

A second optoelectronic semiconductor element 2 is designed as an LED chip. The chip 2 includes two series-connected semiconductor segments 6 having an active layer for emitting electromagnetic radiation. The second chip 2 is designed to emit blue light. For contacting the chip 2 are contacts 4 intended.

A third optoelectronic semiconductor element 3 is designed as an LED chip. The chip 3 includes three series-connected semiconductor segments 7 having an active layer for emitting electromagnetic radiation. The third chip 3 is designed to emit red light. For contacting the chip 3 are contacts 4 intended.

The combination of green, blue and red light results in white light, so the chipset shown 1 . 2 . 3 is suitable to emit white light.

The optoelectronic semiconductor elements 1 . 2 . 3 of the sentence differ in terms of the number of their semiconductor segments 5 . 6 . 7 , The for the operation of the semiconductor elements 1 . 2 . 3 required operating voltage is the same. It is within a predetermined voltage range, so that the components with the same voltage, for example in a parallel circuit, can be operated.

The operating voltage of each chip 1 . 2 . 3 is essentially determined by the segment operating voltages. The segment operating voltage of a semiconductor segment drops during operation of the chip above the corresponding semiconductor segment. The use of different material systems in the optoelectronic semiconductor elements 1 . 2 . 3 conditionally that over their semiconductor segments 5 . 6 . 7 different segment operating voltages fall off.

In the illustrated embodiment falls, with the same semiconductor segments in a chip, half of the operating voltage across the semiconductor segments 5 . 6 the first and the second chip 1 . 2 from. One third of the operating voltage drops over the semiconductor segments 7 of the third chip 3 from. It should be noted that, for example, manufacturing tolerances may cause these voltage distributions to vary slightly.

Because of the series connection of the semiconductor segments 5 . 6 . 7 in the chips 1 . 2 . 3 the respective segment operating voltages add up to the operating voltage of the chip. Thus, the operating voltage depends on the number of semiconductor segments 5 . 6 . 7 from.

If, for example, over the green and blue semiconductor segments 5 . 6 fall about 3 volts, the operating voltage is about 6 volts.

For the red semiconductor segments 7 is the segment operating voltage, for example, about 2 volts, so that the operating voltage of the chip 3 , with three red semiconductor segments 7 , is also about 6 volts.

In this embodiment, the operating voltage is the least common multiple of the segment operating voltages of the semiconductor segments 5 . 6 . 7 in the chips 1 . 2 . 3 of the sentence.

The emitting semiconductor segments 5 . 6 . 7 the chips 1 . 2 . 3 differ in terms of their shape and area.

Such Dimensional differences are appropriate, with different current efficiency the semiconductor segments to compensate for brightness differences and a desired one Adjust hue achieved by a combination of chips shall be.

With the same current flow through the segments, the emitted light per unit area of the semiconductor segments 6 at the second chip 2 less than the first chip 1 , Due to the larger area of the semiconductor segments in the second chip 2 this lower power efficiency is compensated so that the first and the second chip 1 . 2 radiate with the same brightness.

2 shows a further embodiment of a set of optoelectronic semiconductor elements 1' . 2 ' . 3 ' ,

A first optoelectronic semiconductor element 1' is designed as an LED chip. The first chip 1' includes four series-connected semiconductor segments 5 having a layer for emitting electromagnetic radiation. The first chip 1' is designed to emit green light.

Furthermore, there are two contacts 4 for contacting the first chip 1 intended.

A second optoelectronic semiconductor element 2 ' is designed as an LED chip. The second chip 2 ' includes four series-connected semiconductor segments 6 . 6 ' having a layer for emitting electromagnetic radiation. The semiconductor segments 6 . 6 ' in the second chip 2 ' are dimensioned differently. The second chip 2 ' is designed to emit blue light. For contacting the second chip 2 ' are contacts 4 intended.

A third optoelectronic semiconductor element 3 ' is designed as an LED chip. The third chip 3 ' includes six series-connected semiconductor segments 7 having a layer for emitting electromagnetic radiation. The third chip 3 ' is designed to emit red light. For contacting the third chip 3 ' are contacts 4 intended.

The illustrated chipset 1' . 2 ' . 3 ' is suitable to emit white light as a mixture of blue, green and red light.

The for the operation of the semiconductor elements 1' . 2 ' . 3 ' required operating voltage is the same.

Starting from the in 1 example selected segment operating voltages, about 3 volts for the semiconductor segments 5 . 6 . 6 ' of the first and second chips 1' . 2 ' and about 2 volts for the semiconductor segments 7 of the third chip 3 ' , is the operating voltage of the chips 1' . 2 ' . 3 ' about 12 volts. This is a multiple of the segment operating voltages, but not the least common multiple.

3 shows an embodiment of a circuit arrangement with optoelectronic semiconductor elements.

The circuit arrangement, which can be designed as a module, comprises a set with two optoelectronic semiconductor elements 3 . 8th , which are LED chips. A first chip 8th includes two series-connected semiconductor segments 9 which emit green-white light by suitable wavelength conversion. Furthermore, contacts 4 for contacting the first chip 8th intended. The contacts are on the radiation emitting side of the chip 8th arranged. In alternative embodiments of the chip, both contacts or only one of the two are arranged on the side of the chip which faces away from the radiation-emitting side.

embodiments green-white light emitting Semiconductor segments have an active layer that emits blue light and one above it Wavelength conversation layer. The wavelength conversion layer causes the spectrum of light to change and the segment green-white light radiates.

Furthermore, there is a second chip 3 provided, the three semiconductor segments 4 for emitting deep red light, which are connected in series. Further, contacts 4 for contacting the second chip 3 intended. The contacts are on the radiation emitting side of the chip 3 arranged.

The operating voltage of both chips 8th . 3 is equal to.

The first and the second chip 8th . 3 are in a housing 10 arranged which circuit contacts 11 includes, via which the circuit arrangement with the chips 8th . 3 can be fed.

The circuit contacts 11 as well as the first and the second chip 3 . 8th are by means of bond connections 12 connected in parallel.

For operation of the circuit arrangement, the operating voltage to the circuit contacts 11 created. By the parallel connection of the chips 8th . 3 the operating voltage is also at the chips 8th . 3 at.

4 shows a further embodiment of a circuit arrangement, which may be formed as a module, with a set of optoelectronic semiconductor elements 1 . 2 . 3 , which are designed as LED chips.

On a board 14 are the chips 1 . 2 . 3 arranged side by side.

The first chip 1 includes two semiconductor segments 5 which emit blue light. The second chip 2 includes two semiconductor segments 6 , which emit green light, and the third chip 3 includes three semiconductor segments 7 which emit red light. The mixture of these three colors is white light.

Also red, green, Yellow and blue light emitting chips are suitable in combination, white light to emit.

of course is the principle is not limited to such combinations of chips that White light emit. By suitable combination different colors emitting Chips can also be emitted colored light.

Im in 4 illustrated embodiment, the chips 1 . 2 . 3 through tracks 13 connected in parallel.

Further, contact areas 120 provided for contacting the circuit arrangement. In one embodiment, the traces contact the chips on the side away from the radiation-emitting side. In an alternative embodiment, the traces contact the radiation-emitting-side chips.

to Contacting the chips are in addition to bonding wires or traces as well other contacting options conceivable, for example, film connection (CPHF).

The Combination of different colored voltage-matched chips on narrow Space offers the opportunity a homogeneous color mixture even at a small distance to the light source to reach.

5 shows a further embodiment of a circuit arrangement with optoelectronic semiconductor elements.

In this embodiment, the chipset comprises two different chips, 8th . 3 ' , One of the two chip types is provided twice in the circuit arrangement.

In this embodiment, two first chips 8th and a second chip 3 ' on a board 14 , or carrier provided.

The first chips 8th each comprise two series-connected semiconductor segments 9 that emit green-white light. The second chip 3 ' includes six deep red light-emitting semiconductor segments 7 ,

The first chips 8th are connected in series, and this series connection is parallel to the second chip 3 ' connected. The connection of the chips 6 . 3 ' is done by tracks 13 ,

For contacting the board 14 are two contact areas 120 intended. A driver component 15 puts at the contact areas 120 a supply voltage ready. Possible driver components are, for example, voltage sources, constant current sources or pulse-width-modulated current sources.

It should be noted that also in the 3 and 4 shown embodiments of a common driver component can be fed, the operating voltage to the circuit contacts 11 or contact areas 120 provides.

The supply voltage for the in 5 shown circuitry is for example 12 volts. This is also the operating voltage for the second chip 3 ' , whose six semiconductor segments 7 each have a segment operating voltage of 2 volts.

The first chips 8th each have an operating voltage of 6 volts. At the semiconductor segments 9 falls a segment operating voltage of 3 volts from. Through the series connection is on both chips 8th their operating voltage.

When using multiple chips one Color in one embodiment of the circuit arrangement, the chips can be arranged so that color homogeneity is improved, for example, by green-white emitting chips are arranged on both sides of a red-emitting chip. Also, the required voltage for the operation of the circuit may be less than if only parallel-connected chips are used.

It It should be noted that the circuit arrangements shown only by way of example are. The features of the embodiments can be combined.

in the Below, embodiments become opto-electronic Semiconductor elements described.

A embodiment an optoelectronic semiconductor element comprises a substantially flat arranged semiconductor layer sequence with a first and a second Main page and one for generating electromagnetic radiation suitable active layer.

The active layer can in this case a pn junction, a double heterostructure, a single quantum well (SQW) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation. The Designation Quantum well structure unfolds no significance regarding the dimensionality the quantization. It generally includes, among others, quantum wells, quantum wires and Quantum dots as well as any combination of these structures.

In In one embodiment, the first main side for emission is electromagnetic Radiation provided. Furthermore, at least the active layer the semiconductor layer sequence by a penetrating the active layer Digging into at least two electrically isolated active ones Sublayers divided. In other words, the trench cuts through the active layer of the semiconductor layer sequence, thereby electrically mutually isolated active partial layers in the semiconductor layer sequence are formed.

The Optoelectronic semiconductor element further comprises one each on the second main page arranged first and second connection layer to Contacting of the active partial layers. The term means a connection layer arranged on the second main side, that at least a part of the first and second connection layer the semiconductor layer sequence in the direction from the front to the back succeeds. However, it is not necessary that the first or second connection layer directly on the second main page the semiconductor layer sequence is applied. Also, the first one must and second terminal layer not the second main side of the semiconductor layer sequence completely cover up. Rather, the first and second connection layer for contacting the active partial layers at least partially on the second main page arranged. They are thus closer to the second main page than the first main side of the semiconductor layer sequence.

According to the invention first and second terminal layers, each of which at least Contact two electrically isolated active sub-layers, such electrically connected to each other, that the active sub-layers form a series connection.

With In other words, the two attachment layers are the active sublayers interconnected so that the active sublayers are connected in series form.

The Optoelectronic semiconductor element is thus divided into subareas, electrically interconnecting to form a series circuit the different terminal layers are connected. The optoelectronic Semiconductor element can thus voltage driven at the same time low currents be fed. This allows, for example, expensive driver stages as well as high current sources through corresponding high voltage sources replace which are easier to manufacture. By subdivision in partial areas, the optoelectronic semiconductor element can thus with different depending on the subdivision selectable Voltages are operated.

In In one embodiment, the semiconductor element is a thin-film light-emitting diode chip.

The 6A to 6F show a schematic representation of an embodiment of an optoelectronic semiconductor element.

In the embodiments are the proportions the elements shown in principle not to scale consider. Rather, you can individual elements such as layers for better understanding and / or exaggerated for better presentation big or fat be shown.

6A is a sectional view through an optoelectronic semiconductor element along the in 6E shown direction.

Between differently doped layers 21 and 23 a semiconductor layer sequence 20 a pn junction forms 22 in which the charge carriers injected during operation recombine and emit electromagnetic radiation.

The semiconductor layer sequence 20 Based on a semiconductor material system, which can be doped differently depending on the application. For example, so-called III / V compound semiconductors or also II / VI compound semiconductors can be used. The semiconductor layer sequence 21 . 22 . 23 in this case has a thickness between one micron and seven microns.

One III / V compound semiconductor material has at least one element from the third main group, such as Al, Ga, In, and an element of the V main group, such as B, N, P, As, on. In particular, the term "III / V compound semiconductor material" includes the group the binary, ternary or quaternary Compounds containing at least one element from the third main group and contain at least one element from the fifth main group, in particular nitride and phosphide compound semiconductors. Such binary, ternary or quaternary In addition, compound can, for example, one or more dopants as well as additional Have constituents. The III / V compound semiconductor materials include, for example Nitride III-compound semiconductor material and phosphide III compound semiconductor material, about GaN, GaAs, and InGaAlP. Likewise, the material system AlGaN / GaN counted to the above compound semiconductors.

Corresponding For example, an II / VI compound semiconductor material comprises at least one element the second main group such as Be, Mg, Ca, Sr, and a member of the sixth main group, such as O, S, Se, up. In particular, an II / VI compound semiconductor material comprises a binary, ternary or quaternary Compound comprising at least one element from the second main group and at least one element of the sixth main group. Such a binary, ternary or quaternary In addition, compound can, for example, one or more dopants as well as additional Have constituents. The II / VI compound semiconductor materials include Example ZnO, ZnMgO, CdS, CnCdS, MgBeO.

Depending on the desired Wavelength or the desired one Wavelength spectrum can one or more of the above compounds as a material system for a Optoelectronic device can be provided.

A contacting of the semiconductor body takes place in each case in the edge region by the contact elements 410 respectively 411 , The contact element 410 is with breakthroughs 446 electrically connected, which the layer 21 the semiconductor layer sequence 20 to contact.

On the shift 23 is also a lateral power distribution layer 450 arranged, which consists of the same material as the contact layer 411 the second portion of the electronic semiconductor body. This conductive layer may also be reflective, so that in a later operation emitted electromagnetic radiation toward the electrically conductive layer is reflected by this and emitted in the desired direction. The conductive material may comprise, for example, silver or another reflective metal. The first and the second electrical connection layer 460 . 410 may be configured with a conductive mirror layer so that electromagnetic radiation is reflected. In another exemplary embodiment, at least in places a mirror layer is arranged between the semiconductor layer sequence and / or the second electrical connection layer.

The conductive layer 450 is through trenches 442 divided into four subareas. These trenches 442 extend through the semiconductor layer sequence 20 including the active layer 22 through and subdivide the semiconductor layer sequence 20 in four subareas. In addition, the generation of a plurality of openings in the various subareas of the optoelectronic semiconductor body may result in a homogeneous lateral current distribution in the n-doped layer 21 be achieved.

A non-conductive layer 447 is on the walls of the breakthroughs 446 available. Optionally, the trenches 442 filled with a non-conductive material. The insulating sidewalls in the openings prevent a short circuit with the individual layers of the semiconductor layer sequence 20 ,

A second connection layer 460 contacts the power distribution layer 450 the right portion of the optoelectronic semiconductor body and forms the breakdown contact for the layer 21 the semiconductor layer sequence in the left portion of the optoelectronic semiconductor element. The individual breakthroughs 446 go through the pn junction 22 the semiconductor layer sequence 20 and thus contact the n-doped layer 21 , The p-doped layer 23 of the right active portion is through the connection layer 460 electrically connected to an n-doped region of the left active portion. As a result, a series circuit is formed from the two active partial layers.

The second connection layer 410 is with the second layer 23 the semiconductor layer sequence 20 connected.

Between the left and the right subregion of the optoelectronic semiconductor body, as in the cut figure 6A as well as in the plan view of 6E shown, an insulating trench 442 intended. As a result, the subregions are electrically separated from each other. In the equivalent circuit diagram according to 6C Thus, two diodes are connected in series. The diode effect results from the illustrated pn junction of the semiconductor layer sequence 20 ,

to Improvement of the emission can be the upper main side of the layer sequence be structured. It is also possible on the upper main page apply a conversion material so as to emit the emitted electromagnetic To convert radiation into a second radiation of different wavelengths. For a suitable conversion material and certain Material systems for the active layer can thereby white Light for example for Front headlights or projection systems are generated.

6B shows an alternative embodiment in which a plurality of pn junctions are provided instead of a simple pn junction. These transitions act like two diodes connected in series, as can be seen from the equivalent circuit diagram 6D results.

The representation of the section according to 6B takes place along the axes I, as in 6F shown. In this embodiment, the optoelectronic semiconductor element is divided into four subregions, each of which is a trench 442 are isolated isolating. The different connection layers 410 . 411 . 460 and 450 contact in each case the semiconductor layer sequences of the various subregions and the pn junctions therein. The connection layers 410 . 411 . 450 to 470 are designed such that they the four sections, as in the equivalent circuit diagram 6D explained, interconnect.

Thereby is in the optoelectronic semiconductor element according to the proposed Principle a series connection of four each two consecutive realized diodes realized. In the operation of the arrangement is consequently a higher one Operating voltage necessary.

By dividing into four subregions, the current required for the operation of the optoelectronic semiconductor element is reduced, but due to the series connection, the voltage required for the operation is increased. In this embodiment, the optoelectronic component is in four subregions 41 . 42 . 43 . 44 divided, which increases the threshold voltage by a factor of four and at the same time the power consumption is reduced by the corresponding factor. As a result of a generally higher luminous efficiency at low currents, this results in an improved overall efficiency of the component.

By the elegant combination of several series circuits in the epitaxial layer can be expensive Driver stages and high current sources can be saved as the benefits now voltage-driven at low currents in the opto-electronic Semiconductor element is fed. In addition, there is an optimized Land use by Avoidance of absorbing contacts, since all light-generating Components can be realized saving energy on a single semiconductor body are. In addition, leaves a series connection of chips even with only one top contact and a senior wearer To run.

Such an example is in 7 shown. In contrast to the previous embodiments, the breakthrough 403 in the embodiment according to 7 through the active zone as one over the entire thickness of the semiconductor layer sequence 20 running breakthrough executed. The breakthrough 403 In the present case, this extends from the first main surface on the upper side down to the second main surface 402 the semiconductor layer sequence 20 , It forms a hole in the semiconductor layer sequence 20 ,

On the textured top 425 the semiconductor layer sequence 20 is another current spreading layer 409 applied. This is arranged in addition to the current spreading layer provided on the rear side of the semiconductor layer sequence. Both current spreading layers serve to ensure the best possible lateral current distribution and current injection into the semiconductor layer sequence. As a result, the efficiency of the component is increased and, on the other hand, local heating due to excessive current flow into the semiconductor layer sequence is avoided. For this purpose, the current spreading layers have the lowest possible lateral sheet resistance.

In addition, the current spreading layer 409 additionally be designed as a transparent material, for example in the form of a transparent conductive oxide such as ITO. The current spreading layer 409 On the side facing away from the emission direction may preferably be designed reflective, but also transparent. In the latter case, as shown, the optoelectronic semiconductor body has an additional mirror layer 412 on. This is preferably non-conductive, unless an additional insulating passivation layer between the mirror layer 412 and the material of the terminal layer 406 is provided. In one embodiment, the mirror layer 412 the same material as the release layers 405 include. This becomes the reflective property even with a radiation parallel to the active layer of the semiconductor layer sequence by reflections on the side walls improved.

For contacting, the current spreading layer is via feed openings 410a with the electrical connection layer 404 connected. This is about an electrical intermediate layer 408 with a contact element 407 coupled on the back. The contact element 407 at the same time forms the replacement carrier substrate for the optoelectronic semiconductor body.

In the embodiment according to 7 only a first portion of the semiconductor body is shown. A further subregion of the semiconductor body adjoins the first subregion shown here on the left side. This is designed so that the second connection layer 404 is electrically connected to a breakthrough, not shown, in the semiconductor layer sequence. This contacts the first layer 421 the semiconductor layer sequence of the second portion and thus forms a series circuit. At the same time forms the left side arranged insulating material 405 and 413 the trench separating the semiconductor layer sequence into subareas.

In the previous embodiments has been a series connection especially by a corresponding arrangement realized the connection layers within the semiconductor body. Furthermore However, it is also conceivable, a part of the series circuit or Externally develop interconnection variants so that both serial as well as parallel connection and to realize combinations thereof. This can be characteristic by a corresponding control electronics Properties of the semiconductor body changed depending on the application become. For example, it is conceivable in the case of light projectors by a corresponding addition or disconnect individual Subareas of the semiconductor body the light intensity to vary.

Further can the far field of the emitted total radiation by the presence homogenized by diffractive and scattering radiation passage surfaces or otherwise affected. These can be on the outside attached to the module or board.

Also The angular distribution of the total radiation can be determined by the shape of the module body or additional Reflectors are varied.

Claims (15)

Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ), wherein each optoelectronic semiconductor element of the module ( 1 . 2 . 3 ; 8th . 3 ' ) connected in series for the emission of electromagnetic radiation suitable semiconductor segments ( 5 . 6 . 7 . 9 ), of which each semiconductor segment ( 5 . 6 . 7 . 9 ) is characterized by a segment operating voltage, and the segment operating voltages of the series-connected semiconductor segments ( 5 . 6 . 7 . 9 ) substantially an operating voltage of the optoelectronic semiconductor element ( 1 . 2 . 3 ; 8th . 3 ' ), and wherein the operating voltages of the optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) within a voltage range or within a voltage range of a group of predetermined voltage ranges, wherein one of the voltage ranges comprises the sum of the other voltage ranges weighted by natural numbers. Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) according to claim 1, wherein the optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) of the module with respect to their radiated electromagnetic radiation. Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) according to claim 1 or 2, wherein the series-connected semiconductor segments ( 5 . 6 . 7 . 9 ) one of the optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) have substantially the same segment operating voltage. Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ) according to one of claims 1 to 3, wherein series-connected semiconductor segments ( 5 ) of a first optoelectronic semiconductor element ( 1 ) each have a same first segment operating voltage and series-connected semiconductor segments ( 7 ) of a second optoelectronic semiconductor element ( 3 ) each have a same second segment operating voltage, and wherein the predetermined voltage range comprises a common multiple of the first and second segment operating voltage. Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ) according to claim 4, wherein the predetermined voltage range comprises the least common multiple of the first and second segment operating voltage. Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) according to one of claims 1 to 5, wherein the optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) of the module in the color of the radiatable light. Module with optoelectronic semiconductor elements ( 1 . 2 . 3 ) according to claim 6, wherein one of the optoelectronic semiconductor elements ( 1 . 2 . 3 ) of the module is suitable, one of the colors from the group red, green, blue or where one of the optoelectronic semiconductor elements ( 8th . 3 ' ) of the module is suitable for emitting one of the colors from the group white-green and red. Module with optoelectronic semiconductor elements ( 1' . 2 ' . 3 ' ) according to one of claims 1 to 7, wherein a first semiconductor segment ( 6 ), which comprises an active layer for generating the electromagnetic radiation, in a first optoelectronic semiconductor element ( 2 ' ) and a second semiconductor segment ( 6 '; 7 ), which comprises an active layer for generating the electromagnetic radiation, in the first or in a second optoelectronic semiconductor element ( 2 '; 3 ' ) differ in their nature and / or their dimensions. Module with optoelectronic semiconductor elements according to one of claims 1 to 8, wherein a first optoelectronic semiconductor element ( 1 ) and a second optoelectronic semiconductor element ( 2 ) are connected in parallel. Module with optoelectronic semiconductor elements according to one of claims 1 to 9, wherein a first optoelectronic semiconductor element ( 3 ' ) parallel to a series circuit ( 8th . 13 ) of semiconductor elements with at least one second switched semiconductor element ( 8th ) is switched. Module according to one of claims 9 and 10, wherein the semiconductor elements in a housing ( 10 ) or on a support ( 14 ) are arranged. Module according to one of claims 9 to 11, wherein the optoelectronic semiconductor elements ( 8th . 3 ' ) with a common driver component ( 15 ). Module according to one of claims 9 to 12, wherein the mixture of the radiated light of the optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) is white. Module according to one of claims 9 to 13, wherein the optoelectronic semiconductor elements ( 1 . 2 . 3 ; 8th . 3 ' ) have a similar aging and / or temperature behavior. Module according to one of claims 1 to 14, wherein the series connection of the semiconductor segments by conductive connections ( 410 . 411 . 460 ) takes place on the side facing away from a radiation passage surface side of the optoelectronic semiconductor segments.