DE102008049175B8 - Process for the treatment of a SiC surface - Google Patents
Process for the treatment of a SiC surface Download PDFInfo
- Publication number
- DE102008049175B8 DE102008049175B8 DE200810049175 DE102008049175A DE102008049175B8 DE 102008049175 B8 DE102008049175 B8 DE 102008049175B8 DE 200810049175 DE200810049175 DE 200810049175 DE 102008049175 A DE102008049175 A DE 102008049175A DE 102008049175 B8 DE102008049175 B8 DE 102008049175B8
- Authority
- DE
- Germany
- Prior art keywords
- treatment
- sic surface
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200810049175 DE102008049175B8 (en) | 2008-09-26 | 2008-09-26 | Process for the treatment of a SiC surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200810049175 DE102008049175B8 (en) | 2008-09-26 | 2008-09-26 | Process for the treatment of a SiC surface |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102008049175B3 DE102008049175B3 (en) | 2010-04-08 |
DE102008049175B8 true DE102008049175B8 (en) | 2010-07-15 |
Family
ID=41795328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200810049175 Active DE102008049175B8 (en) | 2008-09-26 | 2008-09-26 | Process for the treatment of a SiC surface |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102008049175B8 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002050204A1 (en) * | 2000-12-20 | 2002-06-27 | Bayer Aktiengesellschaft | Method for the chemical-mechanical polishing of isolation layers based on sti technology at elevated temperatures |
WO2005099388A2 (en) * | 2004-04-08 | 2005-10-27 | Ii-Vi Incorporated | Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive |
-
2008
- 2008-09-26 DE DE200810049175 patent/DE102008049175B8/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002050204A1 (en) * | 2000-12-20 | 2002-06-27 | Bayer Aktiengesellschaft | Method for the chemical-mechanical polishing of isolation layers based on sti technology at elevated temperatures |
WO2005099388A2 (en) * | 2004-04-08 | 2005-10-27 | Ii-Vi Incorporated | Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive |
Also Published As
Publication number | Publication date |
---|---|
DE102008049175B3 (en) | 2010-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Inventor name: TRACHTA, GERD, DR., 90427 NUERNBERG, DE Inventor name: STORM, SABINE, 96135 STEGAURACH, DE Inventor name: BRUETTING, BRUNO, 91327 GOESSWEINSTEIN, DE |
|
8396 | Reprint of erroneous front page | ||
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Representative=s name: RAU, SCHNECK & HUEBNER PATENT- UND RECHTSANWAE, DE |
|
R081 | Change of applicant/patentee |
Owner name: SICRYSTAL AG, DE Free format text: FORMER OWNER: SICRYSTAL AG, 91058 ERLANGEN, DE Effective date: 20120926 Owner name: SICRYSTAL GMBH, DE Free format text: FORMER OWNER: SICRYSTAL AG, 91058 ERLANGEN, DE Effective date: 20120926 |
|
R082 | Change of representative |
Representative=s name: RAU, SCHNECK & HUEBNER PATENT- UND RECHTSANWAE, DE Effective date: 20120926 Representative=s name: RAU, SCHNECK & HUEBNER PATENTANWAELTE RECHTSAN, DE Effective date: 20120926 |
|
R081 | Change of applicant/patentee |
Owner name: SICRYSTAL GMBH, DE Free format text: FORMER OWNER: SICRYSTAL AG, 90411 NUERNBERG, DE |
|
R082 | Change of representative |
Representative=s name: RAU, SCHNECK & HUEBNER PATENTANWAELTE RECHTSAN, DE |