DE102008041457A1 - Photovoltaic cell for use as solar cell, solar panel or photo-electrochemical converter in open or in buildings, comprises partially transparent photoelectrode, transparent conductive coating, and intrinsically conductive layer - Google Patents
Photovoltaic cell for use as solar cell, solar panel or photo-electrochemical converter in open or in buildings, comprises partially transparent photoelectrode, transparent conductive coating, and intrinsically conductive layer Download PDFInfo
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- DE102008041457A1 DE102008041457A1 DE102008041457A DE102008041457A DE102008041457A1 DE 102008041457 A1 DE102008041457 A1 DE 102008041457A1 DE 102008041457 A DE102008041457 A DE 102008041457A DE 102008041457 A DE102008041457 A DE 102008041457A DE 102008041457 A1 DE102008041457 A1 DE 102008041457A1
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- 238000000576 coating method Methods 0.000 title claims abstract description 23
- 239000011248 coating agent Substances 0.000 title claims abstract description 22
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 30
- 239000011810 insulating material Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 3
- 239000011164 primary particle Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229920003023 plastic Polymers 0.000 claims description 8
- 239000004033 plastic Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920001197 polyacetylene Polymers 0.000 claims description 2
- 229920000767 polyaniline Polymers 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- 239000000565 sealant Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 48
- 210000004027 cell Anatomy 0.000 description 35
- 230000005855 radiation Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 238000007649 pad printing Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Die Erfindung betrifft neuartige photovoltaische Zellen, die aus nanopartikulärem, dotiertem und/oder undotiertem Silizium aufgebaut sind.The This invention relates to novel photovoltaic cells made of nanoparticulate, doped and / or undoped silicon are constructed.
Die
Entdeckung der Umwandlung von Licht in elektrische Energie geht
zurück auf Alexandre Edmond Becquerel im Jahr 1839 [
Am
weitesten verbreitet sind photovoltaische Zellen aus Halbleitern,
bei denen die durch Lichtquanten erzeugten Ladungsträgerpaare
durch innere elektrische Felder oder auf Grund der unterschiedlichen
Beweglichkeiten teilweise hinsichtlich ihrer Ladungsschwerpunkte
getrennt werden [
Für terrestrischen Anwendungen haben aufgrund ihrer Verbreitung photovoltaische Zellen aus Silizium eine besondere Bedeutung. Man unterscheidet monokristalline, polykristalline und amorphe Silizium-Solarzellen.For terrestrial applications have photovoltaic because of their diffusion Silicon cells have a special meaning. One differentiates monocrystalline, polycrystalline and amorphous silicon solar cells.
Nachteilig an diesen Ausführungsformen ist die aufwendige Herstellung der photovoltaischen Zellen. In allen Fällen liegt eine kompakte Siliziumschicht vor, die je nach Herstellungs-prozeß aus entsprechenden Blöcken gesägt, aus einer Schmelze gegossen oder gezogen bzw. aus einem Vakuumprozeß als dünne Schicht abgeschieden wurde.adversely In these embodiments, the complicated production the photovoltaic cells. In all cases there is one compact silicon layer before, depending on the manufacturing process sawed corresponding blocks, poured from a melt or pulled or from a vacuum process as a thin Layer was deposited.
Aus
diesen Gründen wurden in den letzten Jahren große
Anstrengungen unternommen, um photovoltaische Zellen mit verbesserter
Leistung, Robustheit und geringeren Herstellungs-kosten zu entwickeln.
Beispiele hierfür sind in der
Aufgabe der vorliegenden Erfindung war es daher, photovoltaische Zellen zu entwickeln, die mit möglichst wenigen verschiedenen Materialien einfach hergestellt werden können und eine hohe Effektivität zeigen.task The present invention was therefore photovoltaic cells to develop with as few different ones as possible Materials can be easily made and one show high effectiveness.
Es wurde überraschend gefunden, daß nanoskaliges, kristallines Silizium (nano-Silizium), mit Elementen der III., II. und der V. sowie der VI. Hauptgruppe des Periodensystems dotiert werden kann und sowohl in dotierter als auch undotierter Form geeignet ist für die Herstellung neuartiger photovoltaischer Zellen.It it was surprisingly found that nanoscale, crystalline silicon (nano-silicon), with elements of III., II. and the V. as well as the VI. Main group of the periodic system doped can be and suitable both in doped and undoped form is for the production of novel photovoltaic cells.
Gegenstand
der vorliegenden Erfindung sind daher photovoltaische Zellen, bestehend
aus einer zumindest teilweise transparenten Photoelektrode A, welche
aus einem transparenten isolierenden Material (
dadurch gekennzeichnet, daß
- a) das verwendete Silizium Primärpartikelgrößen im Bereich von 5–200 nm aufweist,
- b) kristallines nano-Silizium eingesetzt wird,
- c) an den beiden leitfähigen Elektroden unter dem Einfluß von Licht elektrische Energie entnommen werden kann.
characterized in that
- a) the silicon used has primary particle sizes in the range of 5-200 nm,
- b) crystalline nano-silicon is used,
- c) electrical energy can be taken from the two conductive electrodes under the influence of light.
Gegenstand
der vorliegenden Erfindung ist ferner ein Verfahren zur Herstellung
der erfindungsgemäßen photovoltaischen Zellen,
dadurch gekennzeichnet, dass eine zumindest teilweise transparente Photoelektrode
A, durch Aufbringen einer transparenten leitfähigen Beschichtung
(
Außerdem ist Gegenstand der vorliegenden Erfindung die Verwendung von erfindungsgemäßen photovoltaischen Zellen als Solarzellen, Solarpaneele oder photoelektrochemischer Wandler.Furthermore The object of the present invention is the use of photovoltaic according to the invention Cells as solar cells, solar panels or photoelectrochemical Converter.
Die erfindungsgemäßen photovoltaischen Zellen weisen gegenüber dem Stand der Technik eine einfache Struktur, mit wenigen unterschiedlichen Materialien und geringen Herstellungskosten, bei verbessertem Wirkungsgrad und höheren Stromdichten auf.The have photovoltaic cells according to the invention a simple structure compared to the prior art, with few different materials and low production costs improved efficiency and higher current densities.
Die erfindungsgemäße photovoltaischen Zellen weisen eine sogenannte pin-Struktur auf. Dabei bedeutet p Dotierung mit einem Element der II. oder III. Hauptgruppe des Periodensystems, n Dotierung mit einem Element der V. oder VI. Hauptgruppe des Periodensystems und i intrinsisch leitfähiges Material.The have photovoltaic cells according to the invention a so-called pin structure on. Here, p means doping with an element of the II. or III. Main group of the periodic table, n doping with an element of the V. or VI. Main group of the periodic table and i intrinsically conductive material.
Das
transparente isolierende Material (
Die
direkt auf dem transparenten Material vorhandene transparente, leitfähige
Beschichtung (
Das
in den Schichten (
Die
Schichten (
In
den Schichten (
Gegenstand
der Erfindung sind auch photovoltaische Zellen, in denen statt drei
einzeln aufgetragenen Schichten (
Die
Gegenelektrode, die als leitfähige Schicht (
Es
ist dem Fachmann klar, dass auch eine erfindungsgemäße
photovoltaische Zelle Anschlüsse benötigt, die
es ermöglichen, den produzierten Strom einem Verbraucher
zuzuleiten. Zu diesem Zweck weist die photovoltaische Zelle zumindest
zwei Anschlüsse auf, wobei der eine Anschluss eine elektrisch
leitende Verbindung zur leitfähigen Schicht (
Die
erfindungsgemäßen photovoltaischen Zellen können
als Abschlussschicht auf der elektrisch leitfähigen Schicht
der Gegenelektrode (
Die
erfindungsgemäßen photovoltaischen Zellen werden
vorzugsweise durch ein Verfahren hergestellt, welches sich dadurch
auszeichnet, dass eine zumindest teilweise transparente Photoelektrode
A, durch Aufbringen einer transparenten leitfähigen Beschichtung
(
Das
Aufbringen von elektrisch leitfähigen transparenten Beschichtungen
ist allgemein bekannt und kann wie dort beschrieben oder z. B. durch
Gasphasenabscheidung erfolgen. Es ist aber auch möglich
direkt mit einer elektrisch leitfähigen, transparenten
Beschichtung ausgerüstetes isolierendes Material (
Auf
die einseitig auf das Material (
Das
Halbleitermaterial kann z. B. direkt auf die Schicht (
Das
Aufbringen der nachfolgenden Schicht (
Auf
die Schicht (
Auf
die Zelle können zusätzlich stromführende
Leiterbahnen und Dichtstoffe flächig strukturiert aufgebracht
werden, wodurch die Zelle leichter zu handhaben und anzuschließen
ist. Vorzugsweise wird die photovoltaische Zelle außerdem
versiegelt. Dies kann z. B. dadurch erfolgen, dass die Zelle durch
eine rückseitige Verbindung mit einem Abdeckmaterial, z.
B. ausgewählt aus Glas, Kunststoff, Polymeren oder Verbundmaterial
versiegelt wird. Die Versiegelung kann durch Erwärmen der
Zelle auf eine Temperatur oberhalb der Erweichungstemperatur des
transparenten, elektrisch isolierenden Material (
Die erfindungsgemäßen photovoltaischen Zellen können z. B. zur Herstellung von Photovoltaische Zellen, Solarpaneelen oder photo-elektrochemischen Wandlern, insbesondere solchen, die sowohl im Freien als auch in Gebäuden eingesetzt werden können, verwendet werden.The photovoltaic cells according to the invention can z. B. for the production of photovoltaic cells, solar panels or photo-electrochemical converters, especially those which can be used both outdoors and in buildings, be used.
An
Hand der
In
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- - DE 4499682 T1 [0006] - DE 4499682 T1 [0006]
- - US 4947219 [0006] US 4947219 [0006]
Zitierte Nicht-PatentliteraturCited non-patent literature
- - Becquerel, A. E. ”Le spectre solaire et la constitution de la lumière électrique.” C. R. l'Acad. Sci., 1839–1841. [0002] - Becquerel, AE "Le specter solaire et la constitution de la lumiere électrique." CR l'Acad. Sci., 1839-1841. [0002]
- - Ch. Weißmantel, C. Hamann, Grundlagen der Festkörperphysik, 4. Auflage, Barth, Leipzig 1995. [0003] - Ch. Weißmantel, C. Hamann, Fundamentals of Solid State Physics, 4th Edition, Barth, Leipzig 1995. [0003]
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008041457A DE102008041457A1 (en) | 2008-08-22 | 2008-08-22 | Photovoltaic cell for use as solar cell, solar panel or photo-electrochemical converter in open or in buildings, comprises partially transparent photoelectrode, transparent conductive coating, and intrinsically conductive layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008041457A DE102008041457A1 (en) | 2008-08-22 | 2008-08-22 | Photovoltaic cell for use as solar cell, solar panel or photo-electrochemical converter in open or in buildings, comprises partially transparent photoelectrode, transparent conductive coating, and intrinsically conductive layer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102008041457A1 true DE102008041457A1 (en) | 2010-02-25 |
Family
ID=41566865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102008041457A Withdrawn DE102008041457A1 (en) | 2008-08-22 | 2008-08-22 | Photovoltaic cell for use as solar cell, solar panel or photo-electrochemical converter in open or in buildings, comprises partially transparent photoelectrode, transparent conductive coating, and intrinsically conductive layer |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102008041457A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4947219A (en) | 1987-01-06 | 1990-08-07 | Chronar Corp. | Particulate semiconductor devices and methods |
DE4499682T1 (en) | 1993-12-10 | 1996-11-14 | Oregon State | Concrete-based solar cell |
-
2008
- 2008-08-22 DE DE102008041457A patent/DE102008041457A1/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4947219A (en) | 1987-01-06 | 1990-08-07 | Chronar Corp. | Particulate semiconductor devices and methods |
DE4499682T1 (en) | 1993-12-10 | 1996-11-14 | Oregon State | Concrete-based solar cell |
Non-Patent Citations (2)
Title |
---|
Becquerel, A. E. "Le spectre solaire et la constitution de la lumière électrique." C. R. l'Acad. Sci., 1839-1841. |
Ch. Weißmantel, C. Hamann, Grundlagen der Festkörperphysik, 4. Auflage, Barth, Leipzig 1995. |
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