DE102008027558A1 - Composition, useful for contacting contact surfaces of chip with contacts of substrate in the flip-chip assembly, comprises monomer formed by polymerization of reactive resin-matrix, lead-line body and flux compatible with matrix - Google Patents

Composition, useful for contacting contact surfaces of chip with contacts of substrate in the flip-chip assembly, comprises monomer formed by polymerization of reactive resin-matrix, lead-line body and flux compatible with matrix Download PDF

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Publication number
DE102008027558A1
DE102008027558A1 DE102008027558A DE102008027558A DE102008027558A1 DE 102008027558 A1 DE102008027558 A1 DE 102008027558A1 DE 102008027558 A DE102008027558 A DE 102008027558A DE 102008027558 A DE102008027558 A DE 102008027558A DE 102008027558 A1 DE102008027558 A1 DE 102008027558A1
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chip
meth
composition
composition according
acrylates
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DE102008027558A
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Jörg Dr. Bauer
Christine Kallmayer
Barbara Pahl
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3613—Polymers, e.g. resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
    • C08F222/1025—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate of aromatic dialcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/38—Epoxy compounds containing three or more epoxy groups together with di-epoxy compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/687—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing sulfur
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
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Abstract

Composition comprises at least a monomer formed by polymerization of a reactive resin-matrix, at least a lead-line body and at least a flux compatible with the reactive resin-matrix. An independent claim is included for a process for contacting contact surfaces of a chip with contacts of a substrate in the flip-chip assembly, comprising: (a) applying the composition on a surface of the chip, at least regionwise; (b) inducing a partial crosslinking of the monomers so that a lot of physical freedom of movement guaranteed; (c) contacting the chip on the bearing surface of the composition with a substrate; and (d) hardening the reaction resin matrix in duroplastic condition by thermal treatment above the melting point of the lot-material, where the contact area of the chip and the contact of the substrate takes place.

Description

Die Erfindung betrifft eine Zusammensetzung für die Kontaktierung von Kontaktflächen eines Chips mit den Kontakten eines Substrats. Sie wird durch die Polymerisation eines eine Reaktivharz-Matrix ausbildenden Monomers, mindestens eines Lotkörper sowie mindestens eines mit der Reaktivharz-Matrix kompatiblen Flussmittels erhalten. Ebenso umfasst die Erfindung die Verwendung der Zusammensetzung zur Chipkontaktierung sowie ein Verfahren zur Kontaktierung von Kontaktflächen eines Chips in der Flip-Chip-Montage.The The invention relates to a composition for contacting contact surfaces of a chip with the contacts of a substrate. It gets through the polymerization a reactive resin matrix-forming monomer, at least a solder body and at least one compatible with the reactive resin matrix flux receive. Likewise, the invention encompasses the use of the composition for chip contacting and a method for contacting contact surfaces a chip in the flip-chip assembly.

Flip-Chips können mittels verschiedenster Technologien aufgebaut werden. Häufig sind sie mit Lotbumps versehen. Sie werden auf einem Substrat platziert und anschließend gelötet. Bei diesem Prozess muss danach noch ein Unterfüller in den Spalt zwischen Chip und Substrat eingebracht werden. Andere Flip-Chip- Prozesse erfordern einen Flip-Chip-Binder. Die Chips werden hier unter Druck- und Temperatureinfluss kontaktiert. Wird dabei Klebstoff zwischen Chip und Substrat verwendet, entsteht der Kontakt über Füllpartikel oder die Berührung zwischen Bump und Leiterbahn. Werden Gold-Bumps und Gold-Endmetallisierung auf dem Substrat verwendet, kann eine Verschweißung realisiert werden. In diesem Fall muss wieder nachträglich unterfüllt werden. Schweiß- und Lötverbindungen zeichnen sich jedoch gegenüber Klebeverbindungen in der Regel durch bessere Zuverlässigkeit sowie höhere Stromtragfähigkeit und geringeren Kontaktwiderstand aus.Flip chips can be built using a variety of technologies. Frequently They provided with solder bumps. They are placed on a substrate and subsequently soldered. In this process, there must be a subfiller in the gap between Chip and substrate are introduced. Other flip-chip processes require a flip-chip binder. The chips are here under pressure and temperature influence contacted. If adhesive is used between chip and substrate, contact arises over filler particles or the touch between bump and trace. Become gold bumps and gold end metallization used on the substrate, a weld can be realized. In this case must be back later be underfilled. welding and solder joints however, they are opposite each other Adhesive bonds usually by better reliability as well as higher current carrying capacity and lower contact resistance.

Ein großer Nachteil der bisher bekannten Verfahren ist die hohe Temperatur, während der Chip-Herstellung. Diese Temperaturen liegen für fast alle Prozesse oberhalb von 200°C und sind somit, wenn kostengünstige Substrate, wie z. B. PET eingesetzt werden soll, völlig ungeeignet.One greater Disadvantage of the previously known methods is the high temperature, while the chip production. These temperatures are for almost all processes are above 200 ° C and thus are, if inexpensive substrates, such as B. PET is to be used, completely unsuitable.

Es ist daher Aufgabe der Erfindung, den Bedarf an einer Kontaktierungstechnik zu decken, die sowohl schnell ist als auch eine Lötverbindung herstellt, bei der keine nachträgliche Unterfüllung benötigt wird und die ohne Druckausübung während der Kontaktierungsphase durchgeführt wird.It is therefore an object of the invention, the need for a Kontaktierungstechnik cover, which is both fast and a solder joint produces, with no subsequent underfilling needed will and without pressure while the contacting phase carried out becomes.

Diese Aufgabe wird durch die Zusammensetzung mit den Merkmalen des Anspruchs 1 gelöst. Die Ansprüche 11 bis 14 betreffen ein Verfahren zur Kontaktierung, Anspruch 15 die Verwendung der Zusammensetzung zur Chipkontaktierung in der Flip-Chip-Montage. Die weiteren abhängigen Ansprüche zeigen vorteilhafte Weiterbildungen der Erfindung auf.These The object is achieved by the composition having the features of the claim 1 solved. The claims 11 to 14 relate to a method for contacting, claim 15 the use of the composition for chip contacting in the flip-chip assembly. The other dependent claims show advantageous developments of the invention.

Erfindungsgemäß wird eine Zusammensetzung für die Kontaktierung von Kontaktflächen eines Chips mit den Kontakten eines Substrats bereitgestellt, das mindestens ein durch Polymerisation eines eine Reaktivharz-Matrix ausbildendes Monomer, mindestens einen Lotkörper sowie mindestens ein mit der Reaktivharz-Matrix kompatibles Flussmittel enthält.According to the invention is a Composition for the contacting of contact surfaces of a chip provided with the contacts of a substrate, the at least one by polymerization of a reactive resin matrix forming Monomer, at least one solder body and at least one flux compatible with the reactive resin matrix.

Die erfindungsgemäße Zusammensetzung bringt den Vorteil mit sich, dass sie eine große Bandbreite bezüglich möglicher Prozesstemperaturen erlaubt. Weiterhin kann durch Einsatz der erfindungsgemäßen Zusammensetzung auf eine nachträgliche Unterfüllung verzichtet werden. Eine Druckausübung während der Kontaktierungsphase erübrigt sich damit.The brings the composition of the invention the advantage that they have a wide range of possible Process temperatures allowed. Furthermore, by use of the composition according to the invention waived a subsequent underfilling become. A pressure exercise during the Contacting phase is unnecessary with it.

Bevorzugt weisen die Monomere als funktionelle Gruppen Acrylat-, (Meth)acrylat- oder Epoxid-Gruppen, insbesondere Polyethylenglycol-di(meth)acrylate, Polypropylenglykol-di(meth)acrylate, Phenol-, Kresol-, Bisphenol-A-Novolak-Poly(meth)acrylate, Glycerol-1,3-diglycerolat-di(meth)acrylate, Bisphenol A-ethoxylat-di(meth)acrylate, Bisphenol A-glycerolat-di(meth)-acrylate, Butandiol-di(meth)acrylate, Methylmethacrylate, 2-Ethylhexylacrylat, Dodecylacrylat, 2-Hydroxy-3-phenoxypropylacrylat, Polypropylenglykol(meth)acrylat, Bisphenol A-diglycidylether, Bisphenol F-diglycidylether, Polyethylenglycol-diglycidylether, Polypropylenglycol-diglycidylether, Phenol-, Kresol-, Bisphenol A-Novolak-Polyglycidylether, Butandiol-diglycidylether, Hexandiol-diglycidylether, 3,4-Epoxycyclohexylmethyl-3,4-epoxycyclohexancarboxylat, Cyclohexen-1,2-dicarbonsäure-bis-(2,3-epoxypropylester), Bis-(3,4-epoxycyclohexylmethyl)-adipat, Trimethylolpropan-triglycidylether und Kombinationen hiervon auf.Prefers have the monomers as functional groups acrylate, (meth) acrylate or epoxide groups, in particular polyethylene glycol di (meth) acrylates, Polypropylene glycol di (meth) acrylates, phenol, cresol, bisphenol A novolak poly (meth) acrylates, Glycerol-1,3-diglycerolat di (meth) acrylates, Bisphenol A ethoxylate di (meth) acrylates, Bisphenol A-glycerolate di (meth) acrylates, Butanediol di (meth) acrylates, methyl methacrylates, 2-ethylhexyl acrylate, Dodecyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, Polypropylene glycol (meth) acrylate, bisphenol A diglycidyl ether, bisphenol F-diglycidyl ether, polyethylene glycol diglycidyl ether, polypropyleneglycol diglycidyl ether, Phenol, cresol, bisphenol A novolak polyglycidyl ether, butanediol diglycidyl ether, Hexanediol diglycidyl ether, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, Cyclohexene-1,2-dicarboxylic acid bis- (2,3-epoxypropyl) Bis (3,4-epoxycyclohexylmethyl) adipate, trimethylolpropane triglycidyl ether and combinations thereof.

Dabei ist wesentlich, dass die Harzmatrix nach der UV-Bestrahlung im Bereich der Schmelztemperatur des Lotes noch eine Bewegung der geschmolzenen Lotkörper ermöglicht. Die endgültige Aushärtung der Harzmatrix erfolgt dann parallel zur Ausbildung der Lötverbindung in einem Temperaturbereich oberhalb der Schmelztemperatur der Lotkörper.there It is essential that the resin matrix in the range after UV irradiation the melting temperature of the solder still a movement of the molten solder body allows. The final curing of the Resin matrix then takes place parallel to the formation of the solder joint in a temperature range above the melting temperature of the solder body.

Es ist auch möglich, bereits vorgefertigte Gemische, die als UV-härtbare Klebstoffe in breiter Palette kommerziell erhältlich sind, einzusetzen. Beispiele hierfür sind Abelux A4039 (Ablestik Germany), Delo-Katiobond, Delo-Photobond (DELO Industrie Klebstoffe), DeSolite 650-002 (DSM Desotech), EpoTek UVO 114 (Polytec GmbH), F-UVE-65 (Newport Corporation), Light Weld, Light Cap, OP-29 (Dymax Corporation), NOA 68 Norland Products Inc.), Vitralit (Panacol-Elosol GmbH).It is possible, too, already pre-made mixtures, which are used as UV-curable adhesives in wider Pallet commercially available are to use. Examples are Abelux A4039 (Ablestik Germany), Delo-Katiobond, Delo-Photobond (DELO Industrial Adhesives), DeSolite 650-002 (DSM Desotech), EpoTek UVO 114 (Polytec GmbH), F-UVE-65 (Newport Corporation), Light Weld, Light Cap, OP-29 (Dymax Corporation), NOA 68 Norland Products Inc.), vitralite (Panacol-Elosol GmbH).

Die Lotkörper, insbesondere Niedertemperaturlot (beispielsweise SnBi, SnBiAg, SnBiIn, InAg, SnBiPb, Bi, PbCd, InCd), werden in eine Harzmatrix eingebettet, so dass eine Paste entsteht, die durch verschiedene Verfahren wie z. B. Dispensen, Jetten, Tauchen o. ä. applizierbar ist. Die Polymermatrix ist eine Reaktivharzmatrix geeigneter Viskosität, die zum Beispiel nach der Bestrahlung mit UV-Licht polymerisiert und so in einen duroplastischen Zustand überführt wird. Durch die Erwärmung der Mischung über den Schmelzpunkt der Lotkörper hinaus schmelzen die Lotkörper auf, verschmelzen mit den benachbarten Lotkörpern und gehen eine Lötverbindung mit dem lötbaren Substratmaterial ein. Der Füllgrad der Paste mit dem Lotmaterial wird dabei so gewählt, dass dabei keine Kurzschlüsse entstehen.The solder bodies, in particular low-temperature solder (for example SnBi, SnBiAg, SnBiIn, InAg, SnBiPb, Bi, PbCd, InCd) are embedded in a resin matrix to form a paste which can be prepared by various methods such as baking. As dispensing, jetting, diving o. Ä. Applicable. The polymer matrix is a reactive resin matrix of suitable viscosity, which is polymerized, for example, after irradiation with UV light and thus converted into a thermosetting state. As a result of the heating of the mixture above the melting point of the solder bodies, the solder bodies melt, fuse with the adjacent solder bodies and enter into a solder connection with the solderable substrate material. The degree of filling of the paste with the solder material is chosen so that there are no short circuits.

In einer bevorzugten Ausführungsform ist das Flussmittel aus der Gruppe der organischen Säuren ausgewählt, insbesondere Milchsäure, Glutarsäure, aus der Gruppe der natürlichen und synthetischen Harze, insbesondere Kolophonium-Formulierungen und Mischungen hiervon. Hierzu zählen auch die kommerziell erhältlichen Flussmittel, wie z. B. TF 38 (Heraeus) oder RMA (Alphametals).In a preferred embodiment the flux is selected from the group of organic acids, in particular Lactic acid, glutaric, from the group of natural and synthetic resins, especially rosin formulations and mixtures thereof. Which includes also the commercially available Fluxes such. TF 38 (Heraeus) or RMA (Alphametals).

Die bevorzugte Zusammensetzung erhält zusätzlich Photoinitiatoren für eine radikalische Polymerisation der Monomere.The preferred composition additionally receives photoinitiators for one radical polymerization of the monomers.

In einer bevorzugten Variante ist als Photoinitiator für die Polymerisation von (Meth)acrylaten Benzildimethylketal enthalten.In A preferred variant is as a photoinitiator for the polymerization of (meth) acrylates benzil dimethyl ketal.

Die Zusammensetzung enthält Benzildimethylketal bevorzugt in einer Konzentration von 0,5 bis 3 Gew.-%, bezogen auf die gesamte Zusammensetzung.The Composition contains Benzildimethylketal preferably in a concentration of 0.5 to 3 Wt .-%, based on the total composition.

Vorzugsweise werden für die Polymerisation von (Meth)acrylat-haltigen Monomeren thiolhaltige Verbindungen, insbesondere Pentaerythritol-tetra(3-mercaptopropionat), Dimercapto-propan, Dimercapto-hexan, Dimercapto-octan, Dimercapto-undecan, Dimercaptododecan, 4,4'-Dimercaptodiphenylsulfid, Trimethylolpropan-trimercaptoacetat, Glykoldi-(3-mercaptopropionat) und/oder Trimethylolpropan-tri-(3-mercaptopropionat) zugesetzt.Preferably be for the polymerization of (meth) acrylate-containing monomers thiolhaltige compounds, especially pentaerythritol-tetra (3-mercaptopropionate), dimercapto-propane, Dimercapto-hexane, dimercapto-octane, dimercapto-undecane, dimercaptododecane, 4,4'-dimercaptodiphenylsulfide, Trimethylolpropane-trimercaptoacetate, glycol di (3-mercaptopropionate) and / or trimethylolpropane tri- (3-mercaptopropionate).

Hier beträgt das Molverhältnis von (Meth)acrylat-haltigen Monomeren zu thiol-haltigen Verbindungen bevorzugt ≤ 1:1.Here is the molar ratio of (meth) acrylate-containing Monomers to thiol-containing compounds preferably ≤ 1: 1.

In einer bevorzugten Variante werden für die kationi sche Polymerisation von Epoxid-haltigen Monomeren Initiatoren, insbesondere Sulfonium-, Iodonium- wie auch Phosphoniumsalze bzw. Mischungen hiervon zugesetzt.In A preferred variant for the kationi cal polymerization of epoxide-containing monomers initiators, in particular sulfonium, Iodonium as well as phosphonium salts or mixtures thereof added.

In einer alternativen Ausführungsform weisen die Initiatoren eine Konzentration von 0,5 bis 10 Gew.-%, insbesondere 1 bis 5 Gew.-%, bezogen auf die gesamte Zusammensetzung, auf.In an alternative embodiment the initiators have a concentration of 0.5 to 10% by weight, in particular 1 to 5% by weight, based on the total composition, on.

Erfindungsgemäß wird ebenfalls ein Verfahren zur Kontaktierung von Kontaktflächen eines Chips mit Kontakten eines Substrats in der Flip-Chip-Montage bereitgestellt, bei dem

  • a) eine Zusammensetzung nach einem der vorhergehenden Ansprüche auf einer Oberfläche des Chips zumindest bereichsweise aufgebracht wird,
  • b) eine Teilvernetzung der Monomere derart herbeigeführt wird, dass eine freie Beweglichkeit der Lotkörper gewährleistet ist,
  • c) der Chip an der mit der Zusammensetzung versehenen Oberfläche mit einem Substrat in Kontakt gebracht wird und
  • d) durch eine thermische Behandlung oberhalb des Schmelzpunktes des Lot-Materials eine Aushärtung der Reaktionsharz-Matrix in einen duroplastischen Zustand durchgeführt wird, wobei die Kontaktierung der Kontaktfläche des Chips und der Kontakte des Substrats erfolgt.
The invention likewise provides a method for contacting contact surfaces of a chip with contacts of a substrate in the flip-chip mounting, in which
  • a) a composition according to one of the preceding claims is applied to a surface of the chip at least in regions,
  • b) a partial crosslinking of the monomers is brought about in such a way that free mobility of the solder bodies is ensured,
  • c) contacting the chip at the compositioned surface with a substrate, and
  • d) by a thermal treatment above the melting point of the solder material, a curing of the reactive resin matrix is carried out in a thermosetting state, wherein the contacting of the contact surface of the chip and the contacts of the substrate takes place.

Bei diesem Verfahren erfolgt die Teilvernetzung bevorzugt durch eine thermische Behandlung in einem Temperaturbereich, der unterhalb des Schmelzpunktes des Lot-Materials liegt.at In this process, the partial crosslinking is preferably carried out by a thermal treatment in a temperature range below the melting point of the solder material is.

In einer bevorzugten Variante erfolgt die Teilvernetzung durch UV-Bestrahlung, wobei die Zusammensetzung mindestens einen Photostarter enthält.In In a preferred variant, the partial crosslinking takes place by UV irradiation, wherein the composition contains at least one photoinitiator.

Bevorzugt wird die Zusammensetzung durch Dispensen, Jetten, Tauchen, Drucken (z. B. Schablonendruck, Siebdruck) oder Gießen aufgebracht.Prefers The composition is made by dispensing, jetting, dipping, printing (eg stencil printing, screen printing) or pouring applied.

Erfindungsgemäß wird die Verwendung der oben beschriebenen Zusammensetzung zur Chipkontaktierung in der Flip-Chip-Montage bereitgestellt.According to the invention Use of the chip contacting composition described above provided in the flip-chip assembly.

Die folgenden Ausführungsbeispiele 1 und 2 stellen verschiedene Möglichkeiten dar, ohne die Erfindung auf diese einschränken zu wollen.The following embodiments 1 and 2 pose different possibilities without wishing to limit the invention to these.

Beispiel 1example 1

Acrylat-basierte ZusammensetzungAcrylate-based composition

24 GT Lotpulver Sn42Bi58 (W. C. Heraeus GmbH) werden mit 6 GT Milchsäure gemischt. Dazu werden 56 GT Bisphenol-A-glycerolate (1-glycerol/phenol)diacrylat (Sigma-Aldrich) und 14 GT Polypropylenglykol-diacrylate (Sigma-Aldrich) gegeben und gut gerührt, bis eine homogene Mischung entsteht. Anschließend werden 2 des Photostarters Genocure BDK (Rahn AG), bezogen auf die Masse des Harzes, zugegeben und bei Raumtemperatur gut durchmischt.24 GT solder powder Sn42Bi58 (W.C. Heraeus GmbH) are mixed with 6 GT lactic acid. This is 56 GT bisphenol A glycerolate (1-glycerol / phenol) diacrylate (Sigma-Aldrich) and 14 GT Polypropylene Glycol Diacrylates (Sigma-Aldrich) given and stirred well, until a homogeneous mixture is formed. Subsequently, 2 of the photostarter Genocure BDK (Rahn AG), based on the mass of the resin added and mixed well at room temperature.

Beispiel 2Example 2

Epoxid-basierte ZusammensetzungEpoxy-based composition

16 GT Lotpulver Sn42Bi58 (W. C. Heraeus GmbH) werden mit 4 GT Milchsäure gemischt. Dazu werden 48 GT Bisphenol-A-Diglycidylether (z. B. Rütapox 0164) und 32 GT Trimethylolpropan-triglycidylether (Sigma-Aldrich) gegeben und gut gerührt, bis eine homogene Mischung entsteht. Anschließend werden 3% des Photostarters Triarylsulfoniumhexafluoroantimonat (Sigma-Aldrich), bezogen auf die Masse des Harzes, zugegeben und bei Raumtemperatur gut durchmischt.16 GT solder powder Sn42Bi58 (W.C. Heraeus GmbH) are mixed with 4 GT lactic acid. For this purpose, 48 parts by weight of bisphenol A diglycidyl ether (eg Rütapox 0164) and 32 GT of trimethylolpropane triglycidyl ether (Sigma-Aldrich) and well stirred, until a homogeneous mixture is formed. Subsequently, 3% of the photostarter Triarylsulfoniumhexafluoroantimonat (Sigma-Aldrich), based on the mass of Resin, added and mixed well at room temperature.

Claims (15)

Zusammensetzung für die Kontaktierung von Kontaktflächen eines Chips mit Kontakten eines Substrats, enthaltend mindestens ein durch Polymerisation eines eine Reaktivharz-Matrix ausbildendes Monomer, mindestens einen Lotkörper sowie mindestens ein mit der Reaktivharz-Matrix kompatibles Flussmittel.Composition for contacting contact surfaces of a Chips having contacts of a substrate containing at least one Polymerization of a Reactive Resin Matrix-Forming Monomer at least one solder body and at least one flux reactive with the reactive resin matrix. Zusammensetzung nach Anspruch 1, dadurch gekennzeichnet, dass die Monomere als funktionelle Gruppen Acrylat-, (Meth)acrylat- oder Epoxid-Gruppen, insbesondere Polyethylenglycol-di(meth)acrylate, Polypropylenglykoldi(meth)acrylate, Phenol-, Kresol-, Bisphenol-A-Novolak-Poly(meth)acrylate, Glycerol-1,3-diglycerolat-di(meth)acrylate, Bisphenol A-ethoxylatdi(meth)acrylate, Bisphenol A-glycerolat-di(meth)acrylate, Butandiol-di(meth)acrylate, Methylmethacrylate, 2-Ethylhexylacrylat, Dodecylacrylat, 2-Hydroxy-3-phenoxypropylacrylat, Polypropylenglykol(meth)acrylat, Bisphenol A-diglycidylether, Bisphenol F-diglycidylether, Polyethylenglycol-diglycidylether, Polypropylenglycol-diglycidylether, Phenol-, Kresol-, Bisphenol A-Novolak-Polyglycidylether, Butandiol-diglycidylether, Hexandiol-diglycidylether, 3,4-Epoxycyclohexylmethyl-3,4-epoxycyclohexancarboxylat, Cyclohexen-1,2-dicarbonsäure-bis-(2,3-epoxypropylester), Bis-(3,4-epoxycyclohexylmethyl)-adipat, Trimethylolpropan-trigly cidylether und Kombinationen hiervon aufweist.Composition according to Claim 1, characterized in that the monomers contain, as functional groups, acrylate, (meth) acrylate or epoxide groups, in particular polyethylene glycol di (meth) acrylates, polypropylene glycol di (meth) acrylates, Phenolic, cresol, bisphenol A novolac poly (meth) acrylates, Glycerol 1,3-diglycerolate di (meth) acrylates, bisphenol A ethoxylate di (meth) acrylates, Bisphenol A-glycerolate di (meth) acrylates, Butanediol di (meth) acrylates, methyl methacrylates, 2-ethylhexyl acrylate, Dodecyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, polypropylene glycol (meth) acrylate, Bisphenol A diglycidyl ether, Bisphenol F diglycidyl ether, polyethylene glycol diglycidyl ether, Polypropylene glycol diglycidyl ether, phenol, cresol, bisphenol A-novolak polyglycidyl ether, butanediol diglycidyl ether, hexanediol diglycidyl ether, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, cyclohexene-1,2-dicarboxylic acid bis (2,3-epoxypropyl ester), Bis (3,4-epoxycyclohexylmethyl) adipate, trimethylolpropane triglycidyl ether and combinations thereof. Zusammensetzung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Flussmittel ausgewählt ist aus der Gruppe der organischen Säuren, insbesondere Milchsäure, Glutarsäure, aus der Gruppe der natürlichen und synthetischen Harze, insbesondere Kolophonium-Formulierungen und Mischungen hiervon.Composition according to Claim 1 or 2, characterized that the flux is selected is from the group of organic acids, in particular lactic acid, glutaric acid, from the group of natural and synthetic resins, especially rosin formulations and mixtures thereof. Zusammensetzung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die Zusammensetzung zusätzlich Photoinitiatoren für eine radikalische Polymerisation der Monomere enthält.A composition according to any one of claims 1 to 3, characterized in that the composition additionally photoinitiators for a radical Polymerization of the monomers contains. Zusammensetzung nach Anspruch 4, dadurch gekennzeichnet, dass als Photoinitiator für die Polymerisation von (Meth)acrylaten Benzildimethylketal enthalten ist.Composition according to Claim 4, characterized that as a photoinitiator for the polymerization of (meth) acrylates Benzildimethylketal included is. Zusammensetzung nach Anspruch 5, dadurch gekennzeichnet, dass Benzildimethylketal in einer Konzentration von 0,5 bis 3 Gew.-%, bezogen auf die gesamte Zusammensetzung, enthalten ist.Composition according to Claim 5, characterized that benzil dimethyl ketal in a concentration of 0.5 to 3 wt .-%, based on the total composition is included. Zusammensetzung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass für die Polymerisation von (Meth)acrylate-haltigen Monomeren thiolhaltige Verbindungen insbesondere Pentaerythritol-tetra(3-mercaptopropionat), Dimercapto-propan, Dimercapto-hexan, Dimercapto octan, Dimercapto-undecan, Dimercapto-dodecan, 4,4'-Dimercaptodiphenylsulfid, Trimethylolpropan-trimercaptoacetat, Glykoldi-(3-mercaptopropionat) und/oder Trimethylolpropan-tri-(3-mercaptopropionat) zugesetzt werden.Composition according to one of the preceding claims, characterized marked that for the polymerization of (meth) acrylate-containing monomers thiolhaltige Compounds in particular pentaerythritol tetra (3-mercaptopropionate), Dimercapto-propane, dimercapto-hexane, dimercapto-octane, dimercapto-undecane, Dimercapto-dodecane, 4,4'-dimercaptodiphenyl sulfide, Trimethylolpropane-trimercaptoacetate, glycol di (3-mercaptopropionate) and / or trimethylolpropane tri- (3-mercaptopropionate) be added. Zusammensetzung nach Anspruch 7, dadurch gekennzeichnet, dass das Molverhältnis von (Meth)acrylat-haltigen Monomeren zu thiol-haltigen Verbindungen ≤ 1:1 beträgt.Composition according to Claim 7, characterized that the molar ratio of (meth) acrylate-containing monomers to thiol-containing compounds ≤ 1: 1. Zusammensetzung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass für die kationische Polymerisation von Epoxid-haltigen Monomeren Initiatoren, insbesondere Sulfonium-, Iodonium- und/oder Phosphoniumsalze und/oder Mischungen hiervon zugesetzt werden.Composition according to one of the preceding claims, characterized marked that for the cationic polymerization of epoxide-containing monomers initiators, in particular sulfonium, iodonium and / or phosphonium salts and / or Mixtures thereof are added. Zusammensetzung nach Anspruch 9, dadurch gekennzeichnet, dass die Initiatoren in einer Konzentration von 0,5 bis 10 Gew.-%, insbesondere 1 bis 5 Gew.-%, bezogen auf die gesamte Zusammensetzung, zugesetzt werden.Composition according to Claim 9, characterized that the initiators are in a concentration of 0.5 to 10 wt .-%, in particular 1 to 5% by weight, based on the total composition, be added. Verfahren zur Kontaktierung von Kontaktflächen eines Chips mit Kontakten eines Substrats in der Flip-Chip-Montage, bei dem a) eine Zusammensetzung nach einem der vorhergehenden Ansprüche auf einer Oberfläche des Chips zumindest bereichsweise aufgebracht wird, b) eine Teilvernetzung der Monomere derart herbeigeführt wird, dass eine freie Beweglichkeit der Lotkörper gewährleistet ist, c) der Chip an der mit der Zusammensetzung versehenen Oberfläche mit einem Substrat in Kontakt gebracht wird und d) durch eine thermische Behandlung oberhalb des Schmelzpunktes des Lot-Materials eine Aushärtung der Reaktionsharz-Matrix in einen duroplastischen Zustand durchgeführt wird, wobei die Kontaktierung der Kontaktfläche des Chips und der Kontakte des Substrats erfolgt.Method for contacting contact surfaces of a Chips with contacts of a substrate in the flip-chip mounting, at the a) a composition according to any one of the preceding claims a surface the chip is applied at least partially, legs Partial crosslinking of the monomers is brought about such that a free mobility the solder body guaranteed is c) the chip on the provided with the composition surface is brought into contact with a substrate and d) by a thermal treatment above the melting point of the solder material a curing of the Reaction resin matrix is performed in a thermoset state, wherein the contacting of the contact surface of the chip and the contacts of the substrate. Verfahren nach Anspruch 11, dadurch gekennzeichnet, dass die Teilvernetzung durch eine thermische Behandlung bei einer Temperatur unterhalb des Schmelzpunktes des Lot-Materials erfolgt.A method according to claim 11, characterized ge indicates that the partial crosslinking takes place by a thermal treatment at a temperature below the melting point of the solder material. Verfahren nach Anspruch 11 oder 12, dadurch gekennzeichnet, dass die Teilvernetzung durch UV-Bestrahlung erfolgt, wobei die Zusammensetzung mindestens einen Photostarter enthält.Method according to claim 11 or 12, characterized that the partial crosslinking is carried out by UV irradiation, wherein the Composition contains at least one photoinitiator. Verfahren nach einem der Ansprüche 11 bis 13, dadurch gekennzeichnet, dass die Aufbringung der Zusammensetzung durch Dispensen, Jetten, Tauchen, Drucken, insbesondere Schablonendruck oder Siebdruck, und/oder Gießen erfolgt.Method according to one of claims 11 to 13, characterized that the application of the composition by dispensing, jetting, diving, Printing, in particular stencil printing or screen printing, and / or casting takes place. Verwendung der Zusammensetzung nach Anspruch 1 bis 10 zur Chipkontaktierung in der Flip-Chip-Montage.Use of the composition according to claim 1 to 10 for chip contacting in the flip-chip assembly.
DE102008027558A 2008-06-10 2008-06-10 Composition, useful for contacting contact surfaces of chip with contacts of substrate in the flip-chip assembly, comprises monomer formed by polymerization of reactive resin-matrix, lead-line body and flux compatible with matrix Withdrawn DE102008027558A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102267025A (en) * 2011-07-28 2011-12-07 常州佳讯光电产业发展有限公司 No-clean low-rosin soldering flux

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Publication number Priority date Publication date Assignee Title
WO2008101884A2 (en) * 2007-02-20 2008-08-28 Basf Se Method for contacting electrical components

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008101884A2 (en) * 2007-02-20 2008-08-28 Basf Se Method for contacting electrical components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102267025A (en) * 2011-07-28 2011-12-07 常州佳讯光电产业发展有限公司 No-clean low-rosin soldering flux

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