DE102008015806B4 - A method of calibrating a simulation or design process, designing or making a mask, or fabricating a device - Google Patents

Abstract

A method of calibrating a simulation method for simulating at least one fabrication step of a device at a first and a second predetermined condition, comprising the steps of: generating (101) a first pre-pattern (31) at the first predetermined condition; Producing (102) a first structure (21) by means of the first preliminary structure (31); Generating (103) a second front-end structure (32, 33) at the second predetermined condition; Generating (104) a second structure (22, 23) by means of the second pre-structure (32, 33); Measuring (105) at least a first parameter at the first pregroove (31) to obtain a first characterization value; Measuring (106) at least one second parameter on the first structure (21) to obtain a second characterization value; Measuring (107) at least the second parameter on the second structure (22, 23) to obtain a third characterization value; Determining (108) a relation between at least the first parameter and the second parameter based on at least the first characterization value and the second characterization value; Determining (109) an estimate of the first parameter at the second pre-pattern (32, 33) based on the third characterization value and the relation; Calibrating (110) the simulation method based on the first characterization value and the estimate.

Description

The present invention relates to a method of calibrating a simulation method, a method of calibrating a design method, a method of designing a mask, a method of manufacturing a mask, and a method of manufacturing a device. The mask can be provided in particular for microstructuring in the context of the production of microelectronic or micromechanical components.

In the production of microelectronic or micromechanical components, microstructures whose dimensions are smaller than the wavelength used are created using current lithographic technologies. Under these conditions, the intensity distribution produced in the photoresist is no longer simply a true-to-scale image of the mask used. Instead, the intensity at each point is also dependent on the intensity in its environment and thus on a whole area of the mask. This is mainly due to diffraction and interference phenomena. These effects are referred to as near field optical effects or optical proximity effects.

In order to produce a desired structure lithographically, therefore, the mask used can not be just a scale geometric prototype of the desired structure, but must deviate from this. A design of a mask such that a structure thus produced lithographically has the desired shape is also referred to as optical environment correction. In the following, the abbreviation OPC of the corresponding English term "optical proximity correction" is used. For example, line widths are deliberately changed and convex or concave outlines are overdrawn.

The OPC is typically implemented as an iterative method. Starting from a predetermined structure to be generated, a preliminary mask layout is varied until a structure resulting from the preliminary mask layout agrees with the given structure to be generated with sufficient accuracy. The structure resulting from the preliminary mask layout is determined by simulation. The simulation includes, among other things, a simulation of the optical image or the intensity generated as a function of location, a simulation of the photoresist and its chemistry in the creation of a resist mask (exposure, possibly in "post-exposure bake", development) and a Simulation of structuring by means of the resist mask. The simulation is typically done by specialized software by computer.

For calibration, starting from a mask, the generation of a corresponding structure is performed in parallel on the one hand in real terms and on the other hand simulated with the simulation method to be calibrated. The calibration is based on a comparison of the real structure with the simulated structure. For this purpose, the structure actually generated is detected and measured with a high spatial resolution, for example by means of an electron microscope.

A mask layout is preferably developed in such a way that it produces the desired structure in the widest possible process window, that is to say in a whole range of processing conditions. In particular, the mask layout should have the desired structure even with over- or under-exposure within certain limits, with slightly different properties of the resist (composition, concentrations), with deviating temperatures during exposure or during development, with a slight variation in the properties of the Developer or at a deviating from the desired position of the image plane ("defocus"). Therefore, it is necessary to calibrate the simulation method or the development method for the mask layout not only for optimal process conditions but within a wider range of process conditions or within a process window.

The calibration of a simulation method thus requires the quantitative detection, in particular measurement, of the structure produced or else of precursors, for example a resist mask. However, the structural features resulting from a deviation of the process conditions from the optimal conditions are in some cases only detectable with great effort and / or low accuracy. For example, an exposure of the resist at an optimum position of the image plane in the vicinity of the center of the resist layer with optimal development results in approximately perpendicular edges or edges of the resist mask. These vertical flanks can be sharply imaged with a scanning electron micrograph in top view ("top-down mode") and measured with high accuracy. If the image width is too small or the image plane is too far away from the substrate under the resist layer, the resulting resist mask has edges with undercuts. If the image width is too large or the image plane is too close to or in the substrate under the resist layer, the resulting resist mask has ramped edges or edges that otherwise deviate from a rectangular profile. In the latter cases is a detection and surveying the Resistmaske with the desired spatial resolution only with increased effort or not possible. Furthermore, in the case of oblique edges or flanks of the resist mask, the subsequent structuring by means of the resist mask can only be simulated with lesser accuracy or increased complexity.

The structuring by means of a resist mask is only one example of processes in which a preliminary structure is first generated, by means of which a structure is then produced. The pre-structure may not only be a resist mask but also, for example, a first hard mask or any other preliminary structure. The pre-structure can be produced by means of a mask, for example in the case of the resist mask.

From the EP 1424595 A2 of the US 2007/0031745 A1 and the US 2007/0032896 A1 In each case, a method for calibrating a simulation method for simulating at least one production step of a component in a first and a second condition is known.

It is an object of the present invention to provide an improved method of calibrating a simulation method and calibrating a design method, an improved method of designing a mask, an improved method of making a mask, an improved method of manufacturing a device, and an improved apparatus for simulating to create a manufacturing step.

This object is achieved by methods according to claims 1, 21, 22, 23 and 24. Further developments of the present invention are defined in the dependent claims.

The present invention is based on the finding that a structure produced by means of a pre-structure, for example a resist mask, can possibly be measured with less effort and / or higher accuracy than the pre-structure itself. Furthermore, the present invention is based on the idea of a relation between one or more parameters characterizing a pre-structure and determining one or more parameters characterizing a structure generated by the pre-structure based on one or more first characterization values and one or more second characterization values. In this case, the first characterization values are obtained from measurements of the one or more parameters at a first pre-structure generated at a first predetermined condition and the second characterization value (s) from measurements of the parameter or parameters at a first structure generated by the first pre-pattern. The relation is thus determined only for the first predetermined condition. Subsequently, in a second condition, a second pre-structure is generated and by means of the second pre-structure a second structure. The relation is then used to determine estimates of the one or more characterization values resulting from measurements on the second structure of the parameter (s) characterizing the pre-pattern in the second condition. The simulation method can then be calibrated on the basis of these estimated values for the preliminary structure generated under the second condition as well as the characterization values for the first preliminary structure generated in the first condition.

If the simulation method to be calibrated can be decomposed into a preliminary structure model for simulating the generation of a preliminary structure and a structuring model for simulating structuring by means of the preliminary structure, the fundamental idea of the present invention can also be represented as follows. The structuring model is calibrated on the basis of a characterization of a first preliminary structure generated in a first predetermined condition and a characterization of a first structure generated by means of the first preliminary structure. Based on the calibrated structuring model and a characterization of a structure generated by means of the second pre-structure, an estimated characterization of the second pre-structure is determined. The pre-structural model is then calibrated based on the characterization of the second structure and the estimated characterization of the second pre-structure.

Some embodiments will be explained in more detail with reference to the accompanying figures. Show it:

1 to 3 schematic representations of a generation of a structure at first predetermined conditions;

4 to 6 schematic representations of a generation of a structure at second predetermined conditions;

7 to 9 schematic representations of a generation of a structure at third predetermined conditions;

10 a schematic representation of a calibration mask;

11 a schematic representation of a flowchart of a method for calibrating a simulation method;

12 a schematic representation of a flowchart of another method for calibrating a simulation method;

13 a schematic representation of an apparatus for simulating at least one manufacturing step of a device; and

14 a schematic representation of an apparatus for simulating at least one manufacturing step of a device.

The 1 to 3 . 4 to 6 respectively. 7 to 9 each show schematic representations of cross sections of a component 10 with a substrate 12 , a hard mask layer 20 on a surface 14 of the substrate 12 and a resist layer 30 on the hard mask layer 20 at different stages of a structuring process under different conditions. The component 10 can be more in the 1 to 9 not shown layers and structures. The device may be, for example, a semiconductor memory or other integrated circuit. The figures and the following description refer to a manufacturing step of the device. The hard mask produced thereby can be used for a subsequent structuring of underlying layers, for example for laterally modulated doping or for etching steps. The hard mask may be on the device 10 remain or be removed. Further steps, for example for the production of doped or undoped layers, for their lateral structuring or for the production of conductor structures, are described in US Pat 1 to 9 not shown.

The 1 to 3 show the structuring at first predetermined conditions, the 4 to 6 show the structuring at second predetermined conditions and the 7 to 9 show the structuring at third predetermined conditions. While in each first 1 . 4 and 7 an exposure of the resist layer 30 is shown in the respective second 2 . 5 and 8th in each case a resulting resist mask 31 . 32 . 33 and in each third 3 . 6 and 9 the resulting structure of a hard mask 21 . 22 . 23 shown. All representations are non-scale and greatly simplified in number, arrangement, and shape of the structures.

In the 1 . 4 and 7 is next to a substrate 12 with a hard mask layer 20 and a resist layer 30 each also a mask 40 represented by an imaging optics 44 in the resist layer 30 is shown. From the mask 40 is in the 1 . 4 and 7 in each case only one of the radiation used impermeable or partially transparent layer shown. The mask 40 can also have a support, such as a quartz glass, which in the 1 . 4 and 7 but not shown. Furthermore, the mask 40 alternatively or additionally to the impermeable or partially transmissive regions, regions with different optical path lengths or relative phase positions of transmitted radiation have. Also a source of radiation for visible light, UV light, EUV light (extreme ultraviolet), X-ray or particle radiation, collimators, diaphragms, etc. are in the 1 . 4 and 7 not shown. The imaging optics 44 may comprise one or more lenses, mirrors or other imaging elements for the electromagnetic or particle radiation used.

In the 1 . 4 and 7 are each an object level 49 in which the mask 40 is arranged, a main plane 45 the imaging optics 44 and an image plane 41 . 42 . 43 shown. The distance between the object plane 49 and the main level 45 the imaging optics 44 is called object distance, the distance between the main plane 45 the imaging optics 44 and the picture plane 41 . 42 . 43 is called image width. Deviating from the representations in the 1 . 4 and 7 can the item level 49 , the main level 45 the imaging optics 44 and the picture plane 41 . 42 . 43 be arranged non-parallel. Furthermore, the object's distance may deviate from the image width, resulting in an imaging ratio of image size / article size = image width / article size ≠ 1.

In the in the 1 . 4 and 7 The configurations shown are the image planes 41 . 42 . 43 at different locations in the resist layer 30 , At the in 1 The arrangement shown is the image plane 41 approximately in the middle of the resist layer 30 , This situation is also referred to as "best focus", and results in an exposed volume 46 is bounded laterally by approximately vertical surfaces.

When developing the resist layer 30 is essentially the exposed volume 46 solved. It arises in the 2 on the hard mask 20 illustrated resist mask 31 with a window 34 , The spatial extent of the window 34 is essentially the same as in 1 illustrated exposed volume 46 , according to the exposed volume 46 also has the window 34 essentially vertical edges or flanks 36 on.

By means of the resist mask 34 then becomes the hardmask layer 20 structured. For example, by an anisotropic dry etching process, the hard mask layer 20 away as far as the window 34 the resist mask 31 free lies. This results from the hard mask layer 20 one in 3 illustrated hard mask 21 with a window 24 , In the dry etching process, as indicated by the dashed outline in FIG 3 indicated, also the resist mask 31 partially removed. Due to the anisotropy of the dry etch process and the substantially vertical edges or flanks 36 of the window 34 are the shape and arrangement of the window 24 essentially through the window 34 the resist mask 31 certainly.

In 4 it can be seen that in the case of the 4 to 6 illustrated example, the image plane 42 relative to the resist layer 30 arranged differently than in the above based on the 1 to 3 illustrated example. The picture plane 42 is not approximately in the middle of the resist layer 30 but at the bottom of the substrate 12 remote surface of the resist layer 30 , An illuminated volume 47 Therefore, it has a cross-section, that of the image plane 42 until the hard mask layer 20 increases.

When developing arises from the in 4 illustrated exposed resist layer 30 in the 5 illustrated resist mask 32 with a window 34 , The spatial extent of the window 34 corresponds approximately to the in 4 illustrated exposed volume 47 , The window 34 therefore also indicates a hard mask layer 20 towards growing cross section and thus edges or edges 37 with an undercut on.

In the subsequent structuring of the hard mask layer 20 can, as indicated by the dashed outline in 6 is indicated, a part of the resist mask 32 be removed. This will also change the shape and size of the window 24 the hard mask so created 22 affected.

At the in 7 example shown is the arrangement of the image plane 43 relative to the resist layer 30 also not optimal. The picture plane 43 is not in the middle of the resist layer 30 but at the interface between the hardmask layer 20 and the resist layer 30 , In other words, the image width is too large in this example. This results in an exposed volume 48 whose cross section is from the image plane 43 to the one from the substrate 12 opposite side of the resist layer 30 increases.

When developing arises from the resist layer 30 one in 8th illustrated resist mask 33 with a window 34 whose shape approximates that of the in 7 represented exposed volume 48 equivalent. The window 34 has beveled edges 38 on. Through the dashed outline in 9 is shown that the resist mask 33 in the subsequent structuring of the hard mask layer 20 partially removed. This will change the shape and size of the window 24 the resulting hard mask 23 affected.

In the above based on the 1 to 9 represented examples by means of the resist mask 31 . 32 . 33 a hardmask layer 20 structured to a hard mask 21 . 22 . 23 to create. Alternatively, by means of the resist mask 31 . 32 . 33 generates other structures, for example a deep trench, a shallow trench or other trenches, through-holes, laterally limited dopings, interconnects, etc. These structures can also be characterized in their shape and size by a deviation of the Location of the image plane 42 . 43 from the optimal location (image plane 41 out 1 ) to be influenced. A mask 40 is preferably designed so that a non-optimal position of the image plane in the resist layer 30 has the least possible effect on the structure produced. The same applies to other conditions of the processing. For example, variations of the exposure dose, the quality or the thickness of the resist layer 30 , Variations of the reflectivity of under the resist layer 30 lying surfaces, a variation of the temperature or a variation of the quality of the developer within predetermined ranges have no or only a minimal effect on the structure produced. This is the layout of a mask 40 already optimized before production.

The optimization of the layout of a mask, for example, takes place in an iterative process. In doing so, a preliminary design is repeatedly varied until a structure generated by the preliminary design of the mask meets given requirements. For each variation of the preliminary design, the generation of the resist mask and the patterning by means of the resist mask are simulated.

In order to be able to optimize the mask with the least possible effect of variations of the conditions, the generation of the resist mask and the structuring must be simulated for different conditions. The simulation method therefore has to be calibrated under different conditions. 10 shows an example of a calibration mask 50 with a catalog of basic structures of different shapes and sizes. In particular, the calibration mask comprises 50 lines 51 different widths, holes 52 different diameter and with different mutual distances, islands 53 and concave and convex corners 54 . 55 , With the calibration mask 50 be under different conditions, for example at different layers of the image plane 41 . 42 . 43 as above based on the 1 to 9 shown, hard masks 21 . 22 . 23 or other structures. The generation of the structures is simulated simultaneously with the simulation method to be calibrated. Based on a comparison of the simulated and the real The simulation method is calibrated. The calibration mask 50 may alternatively be provided for the manufacture of a device mask.

The 11 and 12 2 show schematic flow diagrams of two methods for producing a component, for example a microelectronic or micromechanical component. In order to facilitate the reference to physical features and understanding, is in the description of the in the 11 and 12 schematically illustrated method on top of the 1 to 9 described features. However, the methods may also be practiced with other masks, other imaging systems, other pre-structures that are directly or indirectly generated with or without the use of a mask, and with the creation of other structures. In particular, they are not limited to the variation of the position of the image plane. Alternatively, one or more other conditions may be varied.

The first four steps each 101 . 102 . 103 . 104 the following on the basis of 11 and 12 The methods shown are the same for both methods. In a first step 101 At a first predetermined condition, a first resist mask is generated 31 generated. For this example, a mask 40 in a resist layer 30 displayed. When developing the resist layer 30 the resist mask is created 31 with one or more windows or openings 34 , In a second step 102 is using the first resist mask 31 generates a first structure, for example, a first hard mask 21 , In a third step 103 becomes a second resist mask at a second predetermined condition 32 . 33 generated, for example, by mapping the same mask 40 in a resist layer 30 , In a fourth step 104 is by means of the second resist mask 32 . 33 generates a second structure, for example a second hard mask 22 . 23 , The first and the second structure 21 . 22 . 23 are generated for example by means of an anisotropic dry etching process, wherein by the corresponding resist mask 31 . 32 . 33 uncovered areas are removed.

The first step 101 and the third step 103 differ in that the first resist mask 31 and the second resist mask 32 . 33 be generated at different predetermined conditions. For example, the first resist mask becomes 31 as above using the 1 to 3 shown at an optimal position of the image plane 41 in the middle of the resist layer 30 generates ("best focus") while the second resist mask 32 . 33 as above using the 4 to 6 respectively. 7 to 9 shown at a non-optimal position of the image plane 42 . 43 inside or outside the resist layer 30 is produced. Accordingly, the first resist mask 31 and the second resist mask 32 . 33 as well as the first structure 21 and the second structure 22 . 23 each differ from each other.

Furthermore, in further in the 11 and 12 not shown steps under further conditions further resist masks and by means of the further resist masks further structures are generated. As already mentioned, this can be done instead of the location of the image plane 41 . 42 . 43 or additionally, other conditions may be varied, for example qualities and concentrations of the resist or of a developer, exposure doses, layer thicknesses, temperatures etc. At least one resist mask (in the above with reference to FIGS 1 to 9 described example: the first resist mask 31 ) are generated under optimal conditions. These conditions are, for example, in terms of the achievable sharpness of the image and the achievable accuracy of the structure produced 21 optimal. Alternatively, the conditions of generation are at least one resist mask 31 for detection and measurement of the resist mask 31 optimal. For example, in the above based on the 1 to 9 the examples shown, the approximately vertical edges or flanks 36 in the resist mask 31 both in terms of generation of the structure 21 as well as with respect to a detection and measurement of the resist mask 31 optimally using a scanning electron microscope in top-down mode.

Hereinafter, reference will first be made to the in 11 schematically illustrated method. In a fifth step 105 will be at the first resist mask 31 a first parameter is measured to obtain a first characterization value. In a sixth step 106 becomes at the first structure 21 a second parameter is measured to obtain a second characterization value. In a seventh step 107 the second parameter is also at the second structure 22 . 23 measured to obtain a third characterization value. The first parameter and the second parameter preferably correspond to each other. For example, each of the first and second parameters is a length, a width, a diameter, a radius of curvature, a distance, an angle, a depth, or another geometric parameter. The first and the second parameters can each also be composed of a plurality of geometric variables, for example products or ratios of lengths and widths etc. In optional further steps, further parameters can be measured on the generated resist masks and / or on the structures produced in order to obtain further characterization values to obtain. For ease of understanding, however, the following description refers only to the first parameter and the second parameter.

In an eighth step 108 On the basis of at least the first characterization value and the second characterization value, a relation between the first parameter and the second parameter is determined. This relation may include, for example, the difference or ratio of linewidths, diameters, radii or other parameters on the generated structure and on the resist mask used to produce it. For example, the relation includes the difference of a width of a line in the generated structure 21 and a width of the corresponding line for generating the structure 21 used resist mask 31 , This difference is also referred to as "resist bias" and can be given, for example, as a function of the width of a line and / or the distance between two adjacent lines.

In a ninth step 109 is based on the third characterization value and in the eighth step 108 determines an estimated value of the first parameter on the second resist mask. This is a direct detection and measurement of the second resist mask 32 . 33 not necessary. The determination of the estimated value of the first parameter on the second resist mask on the basis of the third characterization value determined on the second structure and on the basis of the first resist mask 31 and the first structure 21 certain relation is an approximation. This approximation, for example, the above based on the 4 to 9 described three-dimensional structure of the resist mask 32 . 33 ignore. In other words, the approximation includes a two-dimensional description of the resist mask 31 . 32 . 33 For example, an effective line width or an effective distance of the flanks 37 . 38 neglecting their inclination.

In a tenth step 110 the simulation method is calibrated on the basis of the first characterization value and the estimated value. By using the estimate instead of directly on the second resist mask 32 . 33 measured characterization value, the influence of measurement inaccuracies and systematic and non-systematic measurement errors on resist masks generated at non-optimal conditions on the calibration can be avoided.

In an eleventh step 111 is done by means of the first ten steps 101 to 110 calibrated simulation method generates a mask design. In a twelfth step 112 a mask corresponding to the mask design is generated. In a thirteenth step 113 is done by means of the twelfth step 112 mask produced a component, for example a microelectronic or micromechanical device.

At the in 12 schematically illustrated method after the first four steps described above 101 to 104 in a fifth step 115 the first resist mask 31 , the first structure 21 and the second structure 22 . 23 characterized. For example, as above for the steps 105 . 106 . 107 of the basis of the 11 The described method described one or more first parameters on the first resist mask and one or more second parameters on the first structure 21 and at the second structure 22 . 23 measured to obtain corresponding characterization values.

The simulation method, which is based on the 12 includes a resist mask model for simulating the generation of a resist mask 31 . 32 . 33 by means of a mask 40 and a structuring model for simulating the generation of a structure 21 . 22 . 23 by means of the resist mask 31 . 32 . 33 , In a sixth step 116 the structuring model is based on the characterization of the first resist mask 31 and the characterization of the first structure 21 calibrated. The patterning model is thus calibrated exclusively for the first predetermined condition in which the first resist mask 31 was generated. With this approximation, the influence of the conditions of the generation of a resist mask becomes 31 . 32 . 33 on the structuring by means of the resist mask 31 . 32 . 33 simplified modeled.

In a seventh step 117 becomes an estimated characterization of the second resist mask based on the second structure and the structuring model calibrated for the first predetermined condition 32 . 33 certainly. In an eighth step 118 the resist mask model is determined based on the characterization of the first resist mask 31 and the seventh step 117 certain estimated characterization of the second resist mask 32 . 33 calibrated.

The ninth step 119 , the tenth step 120 and the eleventh step 121 correspond to the eleventh step 111 the twelfth step 112 and the thirteenth step 113 of the above based on the 11 illustrated method.

The structuring model, that in the sixth step 116 of the above based on the 11 in particular, may include a relation or consist of a relation, as in the eighth step 108 of the above based on the 11 described method is determined. The above based on the 11 The method described is not only applicable if the simulation method to be calibrated comprises a resist mask model and a structuring model.

The relation in the above based on the 11 described eighth step 108 is determined, a relationship between a plurality of the first resist mask 31 certain parameters and several at the first structure 21 represent certain parameters. For this purpose, the relation can either comprise a plurality of discrete value pairs, which can be represented, for example, in a table. Alternatively, the relation is in the form of one or more scalar or vectorial functions which are fed to measured values. Accordingly, the calibration of the structural model in the sixth step 116 of the above based on the 12 comprise a fit of one or more scalar or vectorial functions or the formation of a two- or more-dimensional table.

In the eighth step 108 of the above based on the 11 illustrated method and in the sixth step 116 of the above based on the 12 In each case, only measurements or characterizations of the first resist mask and the first structure are included in the determination of the relation or in the calibration of the resist mask model. However, the determined relation or the calibrated structuring model may alternatively or additionally also take into account influences of the conditions of the generation of the resist mask on the generation of the structure by means of the resist mask in a flat and uncalibrated manner.

As already mentioned, the above are based on the 11 and 12 not only for resist masks but also for other pre-structures feasible. Instead of the first resist mask and the second resist mask, a first pre-structure and a second pre-structure then occur, which can be produced directly or indirectly by lithographic means by means of a mask or in some other way.

Each of the above based on the 11 and 12 illustrated methods and all variants described can also be implemented as a computer program containing program code or instructions for performing the method steps described.

13 and 14 show devices 70 respectively. 80 for simulating at least one manufacturing step of a component. The component may be, for example, a component for the above based on the 1 to 9 a production step was presented. In order to facilitate understanding, in the description in the 13 and 14 schematically illustrated devices on top of the 1 to 9 described features. Each of the devices 70 . 80 For example, it can be a computer.

In the 13 schematically illustrated device 70 includes a first device 71 to capture characterization values. The first device 71 For example, it includes a keyboard and display or other user interface for inputting and displaying measurements, or one or more interfaces for connecting a keyboard or display or other input device. The first device 71 may alternatively comprise an interface to another computer or to a computer network through which the device 70 Characterization values can be obtained. Furthermore, the first device can comprise an interface to a measuring device, for example to a scanning electron microscope.

The device 70 further comprises a second device 72 that with the first device 71 is coupled and can receive from this characterization values, a third device 73 that with the first device 71 and with the second device 72 coupled, a fourth device 74 the one with the first device 71 and with the third device 73 coupled, and a fifth device 75 that with the fourth device 74 is coupled. The facilities 71 . 72 . 73 . 74 . 75 the device 70 may be partially or completely identical.

The first device 71 is trained to the second device 72 at least one first characterization value, which results from a measurement of a first parameter at a first preliminary structure, for example a first resist mask 31 , and at least one second characterization value obtained from a measurement of a second parameter at one using the first pre-pattern 31 generated first structure 21 was to be made available. The second device 72 is designed to determine a relation between at least the first parameter and the second parameter. This is the second device 72 in particular designed to determine the relation on the basis of at least the first characterization value and the second characterization value.

The first device 71 is further configured to provide the third device with a third characterization value, which is obtained from a measurement of the second parameter at one by means of a second pre-structure, for example a second resist mask 32 . 33 , generated second structure 22 . 23 was obtained. The second device 72 is further configured to the third device 73 to provide the relation. The third device 73 is configured to determine an estimate of the first parameter at the second pre-pattern based on the third characterization value and the relation. Alternatively, the second device 72 trained to be controlled by the third Facility 73 apply the relation to the third characterization value and the estimated value as a result to the third device 73 transferred to.

The first device 71 is further adapted to apply the first characterization value to the fourth device 74 transferred to. The third device is further configured to transmit the estimated value to the fourth device. The fourth device 74 is configured to calibrate the fifth device based on the first characterization value and the estimated value. The fifth device is a device for simulating the manufacturing step.

14 shows another device 80 for simulating at least one manufacturing step of a component. The device 80 includes a first device 81 for simulating generation of a pre-structure, for example a resist mask 31 . 32 . 33 , and a second device 82 for simulating a generation of a structure 21 . 22 . 23 by means of a preliminary structure 31 . 32 . 33 , Furthermore, the device comprises 80 a third facility 83 to capture characterizations of pre-structures 31 . 32 . 33 and structures 21 . 22 . 23 , The third device 83 can be similar to the above based on the 13 illustrated first device 71 For example, a keyboard or other user interface, an interface for connecting a keyboard or other input device, an interface to another computer, to a computer network or to a measuring device.

The device 80 also includes a fourth device 84 that with the second device 82 and the third device 83 coupled, a fifth device 85 that with the second device 82 , the third institution 83 and the fourth device 84 coupled, and a sixth device 86 that with the first device 81 , the third institution 83 and the fifth device 85 is coupled. The facilities 81 . 82 . 83 . 84 . 85 . 86 the device 80 may be partially or completely identical.

The third device is designed to characterize a first preliminary structure 31 and a characterization of one using the first preliminary structure 31 generated first structure 21 to the fourth institution 84 to convey. Furthermore, the third device 83 designed to characterize one by means of a second preliminary structure 32 . 33 generated second structure 22 . 23 to the fifth institution 85 and characterizing the first pre-structure to the sixth device 86 to convey. The fourth device 84 is designed to be the second device 82 based on the characterization of the first preliminary structure 31 and the characterization of the first structure 21 to calibrate.

The fifth institution 85 is designed to be based on the characterization of the second structure 22 . 23 and by the second means 82 an estimated characterization of the second preliminary structure 32 . 33 to determine. In particular, the fifth device is designed, for example, to repeat a provisional estimated characterization to the second device in an iterative process 82 to transmit and vary so that one of the second facility 82 on the basis of the preliminary estimated characterization simulated characterization of the third device 83 provided characterization of the second structure 22 . 23 approximated.

The fifth institution 85 is further configured to provide the estimated characterization to the sixth device 86 transferred to. The sixth device 86 is trained to be the first device 81 based on the characterization of the second structure 22 . 23 and the estimated characterization of the second preformure 32 . 33 to calibrate.

LIST OF REFERENCE NUMBERS

10

module

12

substratum

14

Surface of the substrate 12

20

Hard mask layer

21

hard mask

22

hard mask

23

hard mask

24

Window in the hard mask layer 20

26

Edge of the hard mask layer 20 (optimal image size)

27

Edge of the hard mask layer 20 (Image too short)

28

Edge of the hard mask layer 20 (Image too long)

30

resist layer

31

resist mask

32

resist mask

33

resist mask

34

Window in the resist layer

36

Edge of the resist mask 31 (optimal image size)

37

Edge of the resist mask 32 (Image too short)

38

Edge of the resist mask 33 (Image too long)

40

mask

41

Image plane (optimal image size)

42

Image plane (image width too short)

43

Image plane (image length too long)

44

imaging optics

45

Main plane of the imaging optics

46

illuminated volume (optimal image size)

47

illuminated volume (frame length too short)

48

illuminated volume (image length too long)

49

Object plane

50

Calibration mask

51

line

52

Through Hole

53

island

54

concave corner

55

convex corner

70

Device for simulating

71

first device (for acquiring characterization values)

72

second device (for determining a relation)

73

third means (for determining an estimate)

74

fourth device (to calibrate the simulation)

75

fifth device (to simulate a manufacturing step)

80

Device for simulating

81

first means (for simulating generation of a resist mask)

82

second device (to simulate structuring)

83

third device (for characterizing)

84

fourth device (for calibrating the second device ( 82 )

85

fifth device (for determining an estimated characterization)

86

sixth device (to calibrate the simulation)

101

first step (generating a first resist mask)

102

second step (creating a first structure)

103

third step (creating a second resist mask)

104

fourth step (creating a second structure)

105

fifth step (measuring at least a first parameter on the first resist mask)

106

sixth step (measuring at least one second parameter on the first structure)

107

seventh step (measuring at least the second parameter on the second structure)

108

eighth step (determining a relation)

109

ninth step (determining an estimate of the first parameter)

110

Tenth step (calibration of the simulation procedure)

111

Step 11 (Creating a Mask Design)

112

twelfth step (making a mask)

113

thirteenth step (manufacture of a component)

115

fifth step (characterizing)

116

sixth step (calibrating the structuring model)

117

seventh step (determining an estimated characterization value)

118

eighth step (calibrating the resist mask model)

119

ninth step (creating a mask design)

120

Tenth step (making a mask)

121

Step 11 (Making a Device)

Claims (24)

A method of calibrating a simulation method for simulating at least one fabrication step of a device at a first and a second predetermined condition, comprising the steps of: generating ( 101 ) of a first preliminary structure ( 31 ) at the first predetermined condition; Produce ( 102 ) of a first structure ( 21 ) by means of the first preliminary structure ( 31 ); Produce ( 103 ) a second preliminary structure ( 32 . 33 ) at the second predetermined condition; Produce ( 104 ) a second structure ( 22 . 23 ) by means of the second preliminary structure ( 32 . 33 ); Measure up ( 105 ) at least one first parameter at the first preliminary structure ( 31 ) to obtain a first characterization value; Measure up ( 106 ) at least one second parameter on the first structure ( 21 ) to obtain a second characterization value; Measure up ( 107 ) at least the second parameter on the second structure ( 22 . 23 ) to obtain a third characterization value; Determine ( 108 ) a relation between at least the first parameter and the second parameter based on at least the first characterization value and the second characterization value; Determine ( 109 ) of an estimated value of the first parameter at the second preliminary structure ( 32 . 33 ) based on the third characterization value and the relation; Calibrate ( 110 ) of the simulation method on the basis of the first characterization value and the estimated value. The method of claim 1, wherein the first parameter is a line width, line spacing, or other geometric parameter at the front end ( 31 . 32 . 33 ). Method according to Claim 1 or 2, in which the second parameter has a line width, a line spacing or another geometric parameter on the structure ( 21 . 22 . 23 ). Method according to one of Claims 1 to 3, in which the relation is a ratio between a dimension on the preliminary structure ( 31 . 32 . 33 ) and one appropriate dimension on the structure ( 21 . 22 . 23 ). Method according to one of claims 1 to 3, wherein the relation is a ratio between a dimension of a feature on the structure ( 31 . 32 . 33 ) and a corresponding dimension of a corresponding structural feature of the structure ( 21 . 22 . 23 ). Method according to one of Claims 1 to 3, in which the relation for a plurality of structural features is in each case a ratio between a dimension of the corresponding structural feature on the preliminary structure ( 31 . 32 . 33 ) and a corresponding dimension of a corresponding structural feature on the structure ( 21 . 22 . 23 ). Method for calibrating a simulation method for simulating at least one production step of a component at a first predetermined condition and a second predetermined condition, wherein the simulation method is a preliminary structure model for simulating the generation of a preliminary structure ( 31 . 32 . 33 ) and a structuring model for simulating structuring by means of the preliminary structure ( 31 . 32 . 33 ), comprising the following steps: generating ( 101 ) of a first preliminary structure ( 31 ) at the first predetermined condition; Produce ( 102 ) of a first structure ( 21 ) by means of the first preliminary structure ( 31 ); Produce ( 103 ) a second preliminary structure ( 32 . 33 ) at the second predetermined condition; Produce ( 104 ) a second structure ( 22 . 23 ) by means of the second preliminary structure ( 32 . 33 ); Characterize 115 ) of the first preliminary structure ( 31 ), the first structure ( 21 ) and the second structure ( 22 . 23 ); Calibrate ( 116 ) of the structuring model for the first predetermined conditions based on the characterization of the first preliminary structure ( 31 ) and the characterization of the first structure ( 21 ); Determine ( 117 ) of an estimated characterization of the second preliminary structure ( 32 . 33 ) based on the second structure ( 22 . 23 ) and the structuring model calibrated for the first predetermined condition; Calibrate ( 118 ) of the preliminary structure model based on the characterization of the first preliminary structure ( 31 ) and the estimated characterization. A method according to the preceding claim, wherein: the characterizing ( 115 ) measuring parameters at the first preliminary structure ( 31 ), the first structure ( 21 ) and the second structure ( 22 . 23 ), wherein characterization values for the first preliminary structure ( 31 ), the first structure ( 21 ) and the second structure ( 22 . 23 ) are obtained; the calibration ( 116 ) of the structuring model for the first predetermined conditions on the basis of characterization values of the first preliminary structure ( 31 ) and the first structure ( 21 ) he follows; determining ( 117 ) of an estimated characterization determining at least one estimated characterization value of the second pre-structure ( 32 . 33 ) from the second structure ( 22 . 23 ) and the structuring model calibrated for the first predetermined condition; the calibration ( 118 ) of the preliminary structure model on the basis of at least one characterization value for the first preliminary structure ( 31 ) and the at least one estimated characterization value. The method of claim 7 or 8, wherein the prestructure model is a two-dimensional model. Method according to one of claims 7 to 9, wherein the preliminary structure model and the structuring model one of the condition of the generation of the Vorstruktur ( 31 . 32 . 33 ) independent edge profile of the preliminary structure ( 31 . 32 . 33 ). Method according to one of Claims 7 to 9, in which the preliminary structure model and the structuring model contain an edge profile of the preliminary structure ( 31 . 32 . 33 ) do not model. Method according to one of claims 7 to 11, wherein the characterization comprises determining a line width, a line spacing or another geometric parameter at the first pre-structure ( 31 ), the first and second structures ( 21 . 22 . 23 ). Method according to one of claims 7 to 12, wherein the structuring model a ratio or a difference between a dimension at the Vorstruktur ( 31 . 32 . 33 ) and a corresponding dimension on the structure ( 21 . 22 . 23 ). Method according to one of claims 7 to 12, wherein the structuring model a ratio or a difference between a dimension of a structural feature on the Vorstruktur ( 31 . 32 . 33 ) and a corresponding dimension to the corresponding structural feature of the structure ( 21 . 22 . 23 ). Method according to one of claims 7 to 12, wherein the structuring model for a plurality of structural features each have a ratio or a difference between a dimension of the corresponding structural feature on the Vorstruktur ( 31 . 32 . 33 ) and a corresponding dimension of the corresponding structural feature on the structure ( 21 . 22 . 23 ). Method according to one of the preceding claims, wherein the first predetermined condition is an optimal condition. Method according to one of the preceding claims, in which the first predetermined condition is an optimum position of an image plane ( 41 ). Method according to one of the preceding claims, in which the first preliminary structure ( 31 ) vertical flanks ( 36 ) having. Method according to one of the preceding claims, in which the generating ( 102 ) of the first structure ( 21 ) and creating ( 104 ) of the second structure ( 22 . 23 ) each generate a hardmask in a hardmask layer ( 20 ). Method according to one of the preceding claims, in which the pre-structures are resist masks ( 31 . 32 . 33 ) and the first pre-structure and the second pre-structure each by means of a calibration mask ( 40 ; 50 ) be generated. Method for calibrating a design method for a mask ( 40 ) for structuring, the design method comprising a simulation method for structuring, wherein calibrating the design method comprises a method for calibrating the simulation method according to the preceding claim. Method for designing a mask ( 40 ) for structuring, comprising the steps of: calibrating a design method according to the preceding claim; Produce ( 111 ; 119 ) of a design of the mask ( 40 ) with the calibrated design method. Method for generating a mask ( 40 ) comprising the steps of: calibrating a design method according to claim 21; Produce ( 111 ; 119 ) of a design of the mask ( 40 ) with the calibrated design method; Produce ( 112 ; 120 ) of the mask ( 40 ) according to the design. Method for producing a component ( 10 ), comprising the steps of: calibrating a design method according to claim 21; Produce ( 111 ; 119 ) of a design of a mask ( 40 ) with the calibrated design method; Produce ( 112 ; 120 ) of the mask ( 40 ) according to the design; Produce ( 113 ; 121 ) of the component ( 10 ) by means of the mask ( 40 ).

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