DE102006035563A1 - Silane-free plasma-assisted CVD deposition of silicon nitride as an anti-reflective film and hydrogen passivation of silicon cell-based photocells - Google Patents
Silane-free plasma-assisted CVD deposition of silicon nitride as an anti-reflective film and hydrogen passivation of silicon cell-based photocells Download PDFInfo
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- DE102006035563A1 DE102006035563A1 DE102006035563A DE102006035563A DE102006035563A1 DE 102006035563 A1 DE102006035563 A1 DE 102006035563A1 DE 102006035563 A DE102006035563 A DE 102006035563A DE 102006035563 A DE102006035563 A DE 102006035563A DE 102006035563 A1 DE102006035563 A1 DE 102006035563A1
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- photocells
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000001257 hydrogen Substances 0.000 title claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 17
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 238000000151 deposition Methods 0.000 title description 9
- 230000008021 deposition Effects 0.000 title description 8
- 238000002161 passivation Methods 0.000 title description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000007858 starting material Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- 150000002431 hydrogen Chemical class 0.000 claims abstract 4
- 235000012431 wafers Nutrition 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Die Erfindung betrifft ein Verfahren, um einen anti-reflektierenden Siliziumnitridfilm auf bei gleichzeitiger Wasserstoffatomdiffusion in Siliziumwafer basierten Photozellen während eines chemischen Gasphasenabscheidungsprozesses zu erzeugen, wobei das Verfahren umfasst einen geeigneten Vakuumbehälter für CVD-Prozesse, die auf Silizumwafer basierte Photozellen bei einer geeigneten erhöhten Temperatur enthalten, wenigstens eine elektromagnetische Energiequelle, um mindestens eine Plasmaentladung zu bilden, um radikalisierte oder energetisch angeregte Arten aus gasförmigem Ausgangsmaterial zu erzeugen, ein erstes gasförmiges oder dampfförmiges Ausgangsmaterial, das nur Silizium, Wasserstoff, Stickstoff und Kohlenstoff enthält, ein zweites gasförmiges oder dampfförmiges Ausgangsmaterial, das nur Stickstoff und Wasserstoff enthält, ein drittes gasförmiges oder dampfförmiges Ausgangsmaterial, das nur Wasserstoff enthält.The The invention relates to a method of providing an anti-reflective Silicon nitride film on with simultaneous hydrogen atom diffusion in silicon wafer based photocells during a chemical vapor deposition process The method comprises a suitable vacuum container for CVD processes, the silicon wafer based photocells at a suitable elevated temperature contain, at least one electromagnetic energy source to to form at least one plasma discharge to radicalized or energetically excited species from gaseous source material to generate a first gaseous or vaporous Starting material containing only silicon, hydrogen, and nitrogen Contains carbon, a second gaseous or vaporous Starting material containing only nitrogen and hydrogen, a third gaseous or vaporous Starting material containing only hydrogen.
Description
Bereich der ErfindungField of the invention
Die vorliegende Erfindung bezieht sich auf Systeme und Verfahren zur CVD-Abscheidung.The The present invention relates to systems and methods for CVD deposition.
Hintergrund der ErfindungBackground of the invention
Der
Querschnitt einer typischen auf einem Siliziumwafer aufgebauten
Photozelle ist in
Die
vordere und hintere Elektrode können durch
eine elektrische Last verbunden werden, um einen elektrischen Stromkreis
zu bilden, und ein elektrischer Strom wird fließen, wenn die Photozelle Licht ausgesetzt
wird. Der Zweck der anti-reflektierenden Schicht
Es ist heutzutage Stand der Technologie die Wasserstoffpassivierung des Siliziumwafers während des Aufbringens der anti-reflektierenden Schicht dadurch zu erreichen, dass ein entsprechender Prozess angewendet wird. Es ist allgemein anerkannt, einen auf Vakuumplasma basierenden Siliziumnitrid Beschichtungsprozess in einer mit Wasserstoffatomen angereicherten Umgebung anzuwenden.It Today, the state of the art is hydrogen passivation of the silicon wafer during to achieve the application of the anti-reflective layer, that a corresponding process is applied. It is general recognized, a vacuum plasma based silicon nitride coating process in a hydrogen-enriched environment.
Primär gibt es zwei unterschiedliche Vakuumplasma Prozesse, die gegenwärtig angewendet werden um die Siliziumnitridschicht zu bilden:
- a. Kathodenabtragung von festen Siliziumtargets (Sputtern), wobei Argongas zur Plasmabildung und Ammoniak (chemische Formel NH3) als eine Quelle für atomaren Stickstoff und der Wasserstoff zur Passivierung verwendet werden. Zusätzliches Wasserstoffgas kann, wenn notwendig, dazugegeben werden. Die notwendige Energie für den Erosionsprozess wird als niederfrequenter Wechselstrom (im kHz Bereich) oder als Hochfrequenzleistung bereitgestellt. Gewöhnlich verringern sich die Ablagerungsraten mit zunehmender Frequenz.
- b. Plasma unterstützte chemische Gasphasenabscheidung (CVD), benutzt am häufigsten Silangas (chemische Formel SiH4) als Ausgangsmaterial für Silizium (und Wasserstoff) und Ammoniak als eine Quelle für atomaren Stickstoff und Wasserstoff. Die notwendige Leistung zur Aufspaltung des Ausgangsmaterials im Plasma wird als Hochfrequenz, sehr hohe Frequenz oder Mikrowellenleistung, geliefert. Gewöhnlich wachsen die Abscheidungsraten mit wachsender Frequenz.
- a. Cathode removal of solid silicon targets (sputtering) using argon gas for plasma formation and ammonia (chemical formula NH 3 ) as a source of atomic nitrogen and the hydrogen for passivation. Additional hydrogen gas may be added, if necessary. The necessary energy for the erosion process is provided as low-frequency alternating current (in the kHz range) or as high-frequency power. Usually, the deposition rates decrease with increasing frequency.
- b. Plasma assisted chemical vapor deposition (CVD), which most commonly uses silane gas (chemical formula SiH 4 ) as a source of silicon (and hydrogen) and ammonia as a source of atomic nitrogen and hydrogen. The power required to split the starting material in the plasma is supplied as high frequency, very high frequency or microwave power. Usually, the deposition rates grow with increasing frequency.
Chemische Gasphasenabscheidung (CVD) ist ein Prozess, bei dem ein dünner Film auf einer Substratoberfläche dadurch abgeschieden wird, dass Chemikalien in der gasförmigen oder Dampfphase zusammen reagieren um einen Film zu bilden. Die Gase oder Dämpfe die für CVD verwendet werden sind Gase oder Verbindungen, die das Element oder die Funktionsgruppe der Elemente enthalten, die abgeschieden werden sollen und die veranlasst werden können mit dem Substrat oder anderem Gas zu reagieren um einen Film abzuscheiden. Die CVD Reaktion kann thermisch aktiviert, Plasma induziert, Plasma unterstützt oder durch Licht in Photon induzierten Systemen aktiviert werden.Dry Vapor Deposition (CVD) is a process in which a thin film on a substrate surface This is deposited by chemicals in the gaseous or Vapor phase react together to form a film. The gases or vapors the for CVD are gases or compounds that make up the element or contain the functional group of the elements that are being deposited should and which can be arranged with the substrate or to react to other gas to separate a film. The CVD reaction can be thermally activated, plasma induced, plasma assisted or activated by light in photon-induced systems.
Silangas, die Quelle für Silizium und Wasserstoff und keine andere unerwünschte Atomart, ist eine instabile und sehr reaktionsfähige Verbindung, (und) ideal für hohe Ablagerungsraten. Aber der Hauptvorteil von Silan, seine Reaktionsfähigkeit, ist auch ein großer Nachteil. Wenn es bei Raumtemperatur in Kontakt mit Luft kommt, entzündet sich Silangas spontan ohne jede zusätzliche Energiezufuhr. Dies macht Silan extrem gefährlich und schwierig zu handhaben in einer Fertigungsumgebung. Umfangreiche und teuere Sicherheitseinrichtungen sind für Speicherung, Silangasversorgung des CVD Reaktors und die Abführung der Abgase vom CVD Reaktor notwendig. Die zusätzlichen Kosten für Sicherheitsmaßnahmen sind ein klarer Nachteil von auf CVD aufgebauten Siliziumnitrid bildenden Prozessen im Vergleich zu anderen Methoden, wie auf Kathodenerosion basierenden Prozessen die festes Silizium verwenden. Deshalb ist diese Erfindung, nämlich ein Silan freier CVD Prozess zur Ablagerung von anti-reflektierender Siliziumnitridbeschichtung und gleichzeitige Wasserstoffpassivierung, ein größerer Schritt vorwärts in Richtung Produktionskostenreduzierung von kristallinen Photozellen.Silangas, the source of silicon and hydrogen and no other unwanted atomic species, is an unstable and highly reactive compound, (and) ideal for high deposition rates. But the main advantage of silane, its responsiveness, is also a big drawback. When exposed to air at room temperature, silane gas ignites spontaneously without any additional energy input. This makes silane extremely dangerous and difficult to handle in a manufacturing environment. Extensive and expensive safety equipment is required for storage, silane gas supply to the CVD reactor and removal of exhaust gases from the CVD reactor. The added cost of security measures is a distinct disadvantage of CVD-based silicon nitride forming processes as compared to other methods such as cathode-erosion-based processes using solid silicon. Therefore, this invention, a silane-free CVD process for depositing anti-reflective silicon nitride coating and simultaneous hydrogen passivation, is a major step forward in reducing the cost of production of crystalline photocells.
Zusammenfassung der ErfindungSummary of the invention
Eine Methode um einen anti-reflektierenden Siliziumnitridfilm durch einen Silan freien, plasmaverstärkten CVD Prozess auf Siliziumwafer basierten Photozellen aufzubringen, und um gleichzeitig den Siliziumwafer durch Diffusion von Wasserstoffatomen durch die Oberfläche des Siliziumwafers zu passivieren.A Method by an anti-reflective silicon nitride film by a Silane free, plasma enhanced Apply CVD process to silicon wafer based photocells, and at the same time the silicon wafer by diffusion of hydrogen atoms through the surface passivate the silicon wafer.
In
einer typischen Ausführung
werden, wie in
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Detaillierte BeschreibungDetailed description
Vorbearbeitete
auf Siliziumwafer basierende Photozellen
Der
Betriebszyklus beginnt durch das Einlassen der Ausgangsmaterialgase
oder Dämpfe
in den Behälter
durch Gasverteilungssysteme
Vorzugsweise
wird eine Energiequelle für eine
sehr hohe elektromagnetische Frequenz, wie 2450 MHz gewählt, da
hohe Plasmadichten, die in hohen Filmauftragsraten resultieren,
wünschenswert sind.
Der gas- oder dampfförmige,
nicht Silizium enthaltende Ausgangsmaterialfluss, welcher durch
das Verteilungssystem
Das
Silizium enthaltende Ausgangsmaterial, das durch das Verteilersystem
Da
der erfinderische Schritt dieser Patentanmeldung im Ersatz von Silangas
durch eine organische Siliziumverbindung, wie Hexamethyldisilazan (chemische
Formel (CH3)3-Si-NH-Si-(CH3)3) liegt, ist die
wirksame Zerlegung der entsprechenden Moleküle und die gleichzeitige Unterdrückung von
Kohlenstoffatomeinschluss in dem anti-reflektierenden Film entscheidend.
Der Grad der molekularen Zerlegung durch die Plasmaentladung hängt hauptsächlich ab von
Plasmaelektronentemperatur, Plasmadichte und Intensität der Vakuum-UV-Strahlung
des Plasmas. Vorzugsweise sollte die Zerlegung so sein, dass Kohlenstoff
als flüchtige
Kohlewasserstoffverbindungen übrig
bleibt oder solchen bilden sollte, die schließlich durch die Vakuumpumpstutzen
Das Flussratenverhältnis zwischen dem Silizium enthaltenden gasförmigen Ausgangsmaterial und dem übrigbleibenden Ausgangsmaterial sollte gewöhnlich so gewählt werden, dass stöchiometrisch Siliziumnitrid (chemische Formel Si3N4) gebildet werden kann. Jedoch können verschiedene Arten von auf Silizium basierten Photozellen Anpassungen der Zusammensetzung des Siliziumnitrids erfordern. Alle Anpassungen erstreben maximale Werte des Wirkungsgrades der Photozelle. Sollte der Wasserstoffgehalt der Silizium und Stickstoff enthaltenden Ausgangsmaterialien für die Passivierung des Siliziumwafers nicht ausreichend sein, kann molekularer Wasserstoff dem Plasmaprozess zugefügt werden.The flow rate ratio between the silicon-containing gaseous starting material and the remaining starting material should usually be selected so that stoichiometric silicon nitride (chemical formula Si 3 N 4 ) can be formed. However, various types of silicon based photocells may require adjustments to the silicon nitride composition. All adjustments seek maximum values of the efficiency of the photocell. Should the hydrogen content of the silicon and nitrogen containing starting materials be insufficient for the passivation of the silicon wafer, molecular hydrogen can be added to the plasma process.
Um
hohe Ablagerungsraten, sowie ein geeignetes Maß von molekularer Zerlegung
des Ausgangsmaterials zu erhalten und um die räumliche Gleichverteilung des
Anlagerungsprozesses zu erhöhen,
kann die Plasmaquelle
Plasmaquelle
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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DE102006035563A DE102006035563A1 (en) | 2006-07-27 | 2006-07-27 | Silane-free plasma-assisted CVD deposition of silicon nitride as an anti-reflective film and hydrogen passivation of silicon cell-based photocells |
PCT/EP2007/006665 WO2008012098A2 (en) | 2006-07-27 | 2007-07-27 | Silane-free plasma-assisted cvd deposition of silicon nitride as an antireflective film and for hydrogen passivation of photocells constructed on silicon wafers |
TW096131319A TW200910426A (en) | 2006-07-27 | 2007-08-23 | Silane free, plasma enhanced chemical vapour deposition of silicon nitride as an antireflective film and for hydrogen passivation of silicon wafer based photovoltaic cells |
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DE102006035563A DE102006035563A1 (en) | 2006-07-27 | 2006-07-27 | Silane-free plasma-assisted CVD deposition of silicon nitride as an anti-reflective film and hydrogen passivation of silicon cell-based photocells |
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DE102006035563A Withdrawn DE102006035563A1 (en) | 2006-07-27 | 2006-07-27 | Silane-free plasma-assisted CVD deposition of silicon nitride as an anti-reflective film and hydrogen passivation of silicon cell-based photocells |
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DE (1) | DE102006035563A1 (en) |
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WO (1) | WO2008012098A2 (en) |
Cited By (1)
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EP2139025A1 (en) | 2008-06-25 | 2009-12-30 | Applied Materials, Inc. | Arrangement for coating a cristalline silicon solar cell with an antireflection/passivation layer |
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PL233603B1 (en) * | 2017-10-09 | 2019-11-29 | Politechnika Lodzka | Method for producing one-layered optical filters with the light refractive index gradient |
CN109360866B (en) * | 2018-09-25 | 2021-07-20 | 韩华新能源(启东)有限公司 | Preparation method of three-layer silicon nitride film |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4863755A (en) * | 1987-10-16 | 1989-09-05 | The Regents Of The University Of California | Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors |
JP2004356595A (en) * | 2003-05-30 | 2004-12-16 | Samco International Inc | Method of manufacturing silicon-based film containing carbon using cathode coupling-type plasma cvd equipment |
US20050255713A1 (en) * | 2002-07-08 | 2005-11-17 | Kohshi Taguchi | Method and apparatus for forming nitrided silicon film |
DE102004015217A1 (en) * | 2004-03-23 | 2006-01-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for forming thin layers of silicon nitride on substrate surfaces |
US20060014399A1 (en) * | 2004-07-14 | 2006-01-19 | Tokyo Electron Limited | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films |
-
2006
- 2006-07-27 DE DE102006035563A patent/DE102006035563A1/en not_active Withdrawn
-
2007
- 2007-07-27 WO PCT/EP2007/006665 patent/WO2008012098A2/en active Application Filing
- 2007-08-23 TW TW096131319A patent/TW200910426A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4863755A (en) * | 1987-10-16 | 1989-09-05 | The Regents Of The University Of California | Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors |
US20050255713A1 (en) * | 2002-07-08 | 2005-11-17 | Kohshi Taguchi | Method and apparatus for forming nitrided silicon film |
JP2004356595A (en) * | 2003-05-30 | 2004-12-16 | Samco International Inc | Method of manufacturing silicon-based film containing carbon using cathode coupling-type plasma cvd equipment |
DE102004015217A1 (en) * | 2004-03-23 | 2006-01-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for forming thin layers of silicon nitride on substrate surfaces |
US20060014399A1 (en) * | 2004-07-14 | 2006-01-19 | Tokyo Electron Limited | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2139025A1 (en) | 2008-06-25 | 2009-12-30 | Applied Materials, Inc. | Arrangement for coating a cristalline silicon solar cell with an antireflection/passivation layer |
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TW200910426A (en) | 2009-03-01 |
WO2008012098A2 (en) | 2008-01-31 |
WO2008012098A3 (en) | 2008-06-05 |
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