DE102005016440A1 - Power semiconductor e.g. insulated gate bipolar transistor, switching operation optimizing device for e.g. inverter, has semiconductor device to activate semiconductor, where progression of voltage is provided such that operation is adapted - Google Patents

Power semiconductor e.g. insulated gate bipolar transistor, switching operation optimizing device for e.g. inverter, has semiconductor device to activate semiconductor, where progression of voltage is provided such that operation is adapted Download PDF

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Publication number
DE102005016440A1
DE102005016440A1 DE102005016440A DE102005016440A DE102005016440A1 DE 102005016440 A1 DE102005016440 A1 DE 102005016440A1 DE 102005016440 A DE102005016440 A DE 102005016440A DE 102005016440 A DE102005016440 A DE 102005016440A DE 102005016440 A1 DE102005016440 A1 DE 102005016440A1
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Prior art keywords
semiconductor
switching
power semiconductor
voltage
inverter
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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DE102005016440A
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German (de)
Inventor
Jochen Hantschel
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Hantschel Jochen Dipl-Ing (fh)
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Hantschel Jochen Dipl-Ing (fh)
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Priority to DE102005016440A priority Critical patent/DE102005016440A1/en
Publication of DE102005016440A1 publication Critical patent/DE102005016440A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

The device has a semiconductor device (H) to activate a power semiconductor. The progression of a gate-emitter voltage is provided such that the switching operation of the semiconductor is adapted with respect to the switching and outlet losses, disconnectability, switching surge and electromagnetic compatibility of the semiconductor by optimizing the voltage, current, switching temperature or external conditions. An independent claim is also included for a method for optimization of a switching operation of a power semiconductor.

Description

Aufbau:Construction:

Die Erfindung besteht darin, dass im Gegensatz zur allgemein üblichen Ansteuerung eines Leistungshalbleiters LH dieser ausgeführt vorzugsweise als MOSFET oder IGBT, mittels einer (evtl. auch mehrstufigen) Treiberstufe und einer Widerstands/Diodenbeschaltung, welche nach Implementierung der Schaltung durch die verwendeten Bauelemente stets einen festen Verlauf der Gate-Emitterspannung beim Ein- und Ausschaltvorgang vorgeben, die Ansteuerschaltung (AS) mit einem getakteten (T = Taktgeber), programmierbaren Halbleiterbauelement H, vorzugsweise einem Mikroprozessor oder FPGA, ausgestattet ist, welches über einen externen oder internen Speicher SP zur Ablegung von Daten verfügt. Dieser kann als einmal beschreibbarer, mehrfach beschreibbarer oder herstellerseitig vorprogrammierter Speicher ausgeführt sein. Ein interner oder externer D/A-Wandler wandelt die vom Bauelement H ausgegebenen digitalen Werte / Informationen (ggf. über einen Verstärker V) in eine analoge Spannung UGEI, welche ggf. über eine weitere Treiberschaltung TS ohne zusätzliche galvanische Trennung an den Gate-Anschluss des Leistungshalbleiters LH angelegt wird. Der Emitteranschluss des Leistungshalbleiters wird mit dem Massepotenzial der Ansteuerschaltung AS verbunden. Die Ansteuerschaltung kann neben der Schnittstelle S1für den Schaltbefehl SSchalt auch eine weitere Schnittstelle S2 zur uni- oder bidirektionalen Übermittlung anderer Informationen (auch während des Betriebs) zur und von der Ansteuerschaltung AS besitzen. Die Bauteile Verstärker V und Treiberschaltung TS können, müssen aber nicht Bestandteil der Schaltungsanordnung sein. The invention consists in that in contrast to the generally usual control of a power semiconductor LH this preferably carried out as a MOSFET or IGBT, by means of a (possibly multi-stage) driver stage and a resistor / diode circuit, which after implementation of the circuit by the components used always a fixed Specify the course of the gate-emitter voltage during switching on and off, the drive circuit (AS) with a clocked (T = clock), programmable semiconductor device H, preferably a microprocessor or FPGA, equipped, which via an external or internal memory SP for the deposition of Data has. This can be designed as a rewritable, multi-writable or manufacturer-preprogrammed memory. An internal or external D / A converter converts the digital values / information output by the component H (possibly via an amplifier V) into an analog voltage U GEI which, if appropriate, is connected to the gate via a further driver circuit TS without additional galvanic isolation. Connection of the power semiconductor LH is created. The emitter terminal of the power semiconductor is connected to the ground potential of the drive circuit AS. In addition to the interface S1 for the switching command S switching , the control circuit can also have a further interface S2 for unidirectional or bidirectional transmission of other information (also during operation) to and from the control circuit AS. The components amplifier V and driver circuit TS can, but need not be part of the circuit arrangement.

Funktion:Function:

Sobald die Ansteuerschaltung einen Schaltbefehl SSchalt erhält, wird die Aus- gangsspannung UGE1, welche i.d.R über eine weitere Treiberstufe (TS) an den Gate-Anschluss G angelegt wird (dann UGE2), vom programmierbaren Halbleiterbauelement mit einem zeitlichen Verlauf entsprechend der im Speicher hinterlegten Kennlinie/Kennfeld und ggf. abhängig von über Schnittstelle S2 erhaltenen Irformationen (z.B. über den geschalteten Strom oder die Chiptemperatur) ausgegeben. Durch den programmierbaren zeitlichen Verlauf der steuernden Gate-Emitterspannung UGE1 kann das Schaltverhalten des Leistungshalbleiters für alle denkbaren Anwendungen und Einsatzbedingungen hinsichtlich der unter Anspruch 1 genannten Aspekte flexibel optimiert werden.As soon as the drive circuit receives a switching command S switching , the output voltage U GE1 , which is usually applied via a further driver stage (TS) to the gate terminal G (then U GE2 ), from the programmable semiconductor device with a time course corresponding to the Memory stored characteristic curve / map and possibly depending on received via interface S2 Irformation (eg on the switched current or the chip temperature) output. Due to the programmable time profile of the controlling gate emitter voltage U GE1 , the switching behavior of the power semiconductor can be flexibly optimized for all conceivable applications and operating conditions with regard to the aspects mentioned under claim 1.

Bislang mussten Ansteuerschaltungen für nichteinrastende, abschaltbare Leistungshalbleiter meist unter Berücksichtigung eines „Restrisikos" sehr defensiv (d.h. mit langsamen Schaltzeiten = mit hohen Verlusten) ausgelegt werden, um auch im ungünstigsten Betriebsfall Kurzschlussfestigkeit und EMV-Grenzwerte sicherzustellen, da das Schaltverhalten des Leistungshalbleiters stets mit Definition der Gate-Beschaltung (R,L,C) festgelegt war. Eine Auslegung in Richtung schnellerer Schaltzeiten zur Verlustreduzierung hatte einen höheren externen Entstörungsaufwand und problematischeres Kurzschlussverhalten des Leistungshalbleiters zur Folge. Die erfindungsgemäße Vorrichtung bietet z.B. die Möglichkeit, in kritischen Momenten des Schaltverhaltens des Leistungshalbleiters den Auf- oder Abbau der Gateladung gezielt zu verlangsamen, und in unkritischen Zeitabschnitten gezielt zu beschleunigen.So far had to drive circuits for non-latching, switchable power semiconductors are usually very defensive (i. e., taking into account a "residual risk"). with slow switching times = with high losses), in the worst case too Ensure operation short-circuit strength and EMC limit values, because the switching behavior of the power semiconductor always with definition of Gate wiring (R, L, C) was fixed. An interpretation in the direction faster switching times for loss reduction had a higher external interference suppression and more problematic short circuit behavior of the power semiconductor result. The device according to the invention offers e.g. the possibility, in critical moments of the switching behavior of the power semiconductor specifically to slow down the up or down of the gate charge, and Speeding up in uncritical time periods.

Die Erfindung ermöglicht, Schaltnetzgeräte der Energieelektronik, vorzugsweise Pulsumrichter, Hoch-/Tiefsetzsteller oder Wechselrichter, hinsichtlich verschiedener, nach Stand der Technik auch gegensätzlicher Anforderungen durch applikationsabhängige Ansteuerung des Leistungshalbleiters mit dem jeweils idealen Steuerspannungsverlauf zu optimieren.The Invention allows Switched-mode power supply units of Energy electronics, preferably pulse converters, boost / buck converter or inverter, in terms of various, as of Technology also more contradictory Requirements due to application-dependent control of the power semiconductor to optimize with the ideal control voltage curve.

Die Erfindung ermöglicht Schaltnetzteile, Pulsumrichter oder Wechselrichter mit gleichzeitig besonders hohem Wirkungsgrad, besonders geringen elektromagnetischen Rückwirkungen und mit sehr hoher Kurzschlussfestigkeit.The Invention allows Switching power supplies, pulse inverters or inverters with at the same time special high efficiency, particularly low electromagnetic repercussions and with very high short-circuit strength.

Die Möglichkeit der Kommunikation der Ansteuerschaltung mit anderen Komponenten des Gesamtsystems nach Anspruch 2 ermöglicht es, den Leistungshalbleiter auch abhängig von ansteuerschaltungsexternen Bedingungen, z.B. auslastungs- und/oder umgebungstemperaturabhängig, hinsichtlich des Wirkungsgrades, der elektromagnetischen Verträglichkeit und des Kurzschlussverhaltens auch während des laufenden Betriebs stets mit ideal angepasstem Schaltverhalten zu betreiben.The possibility the communication of the drive circuit with other components of the overall system according to claim 2 makes it possible to use the power semiconductor also dependent of drive circuit external conditions, e.g. utilization and / or ambient temperature dependent, in terms of efficiency, electromagnetic compatibility and the short-circuit behavior even during operation Always operate with ideally adapted switching behavior.

Zeichnungendrawings

1: Erfidungsgemäße Anordnung (Blockschaltbild) 1 : Arrangement According to the Invention (Block Diagram)

2: Stand der Technik: Typisches Einschaltverhalten am Beispiel eines NPT-IGBT 2 : State of the art: Typical switch-on behavior using the example of an NPT-IGBT

3: Stand der Technik: Typisches Ausschaltverhalten am Beispiel eines NPT-IGBT 3 : State of the art: typical switch-off behavior using the example of an NPT-IGBT

4: (punktiert eingezeichnet): Beispielhaftes, erzielbares Einschaltverhalten durch einen durch die erfindungsgemäße Schaltungsanordnung gezielt beeinflussten Gatestrom IG analog zur Gate-Emitterspannung UGE1. 4 : (dotted line): Exemplary, achievable switch-on behavior by a gate current I G deliberately influenced by the circuit arrangement according to the invention analogous to the gate emitter voltage U GE1 .

5: (punktiert eingezeichnet): Beispielhaftes, erzielbares Ausschaltverhalten. durch einen durch die erfindungsgemäße Schaltungsanordnung gezielt beeinflussten Gatestrom IG analog zur Gate- Emitterspannung UGE1. 5 : (dotted line): Exemplary, achievable switch-off behavior. by a gate current I G influenced in a targeted manner by the circuit arrangement according to the invention analogously to the gate emitter voltage U GE1 .

Claims (3)

Vorrichtung und Verfahren zur flexiblen Optimierung der Schaltvorgänge eines nichteinrastenden, abschaltbaren Leistungshalbleiters (MOSFET oder IGBT), dadurch gekennzeichnet, dass zur Ansteuerung des Leistungshalbleiters mindestens ein getaktetes, programmierbares Halbleiterbauelement (z.B. Mikroprozessor oder FPGA) eingesetzt wird, das mittels einer programmierten bzw. programmierbaren und dauerhaft hinterlegbaren Tabelle, Kennlinie oder einem Kennfeld in der Lage ist, den Verlauf der den Halbleiter ansteuernden Gate-Emitterspannung derart vorzugeben, dass das Schaltverhalten des Leistungshalbleiters hinsichtlich seiner Schaltverluste, seiner Durchlassverluste, der Abschaltfähigkeit, der Schaltüberspannung im Kurzschlussfall, der elektromagnetischen Verträglichkeit der Schaltvorgänge durch Optimierung der Anstiegs- und Abfallsteilheiten von Spannung und Strom, dem geschalteten Strom, der Schaltspannung, der Schaltertemperatur oder anderer externer Bedingungen durch entsprechende Programmierung der Tabelle, der Kennlinie oder des Kennfeldes für den jeweiligen Einsatzzweck optimal und flexibel angepasst werden kann. Device and method for flexible optimization of the switching operations of a non-latching, turn-off power semiconductor (MOSFET or IGBT), characterized in that for controlling the power semiconductor at least one clocked, programmable semiconductor device (eg microprocessor or FPGA) is used, by means of a programmed or programmable and permanently storable table, curve or a map is able to specify the course of the semiconductor driving gate emitter voltage such that the switching behavior of the power semiconductor with respect to its switching losses, its forward losses, Abschaltfähigkeit, the switching overvoltage in the event of short circuit, the electromagnetic compatibility of the switching operations by optimizing the rise and fall slopes of voltage and current, the switched current, the switching voltage, the switch temperature or other external conditions by appropriate P rogramming of the table, the characteristic curve or the characteristic diagram can be adapted optimally and flexibly for the respective application. Vorrichtung und Verfahren nach Anspruch 1, welche über eine oder mehrere zusätzliche Schnittstelle(n) zum Informationsaustausch zwischen dem programmierbaren Halbleiterbauelement und übergeordneten oder beigeordneten Steuer- oder Hilfssystemen verfügt.Apparatus and method according to claim 1, which comprises a or several additional ones Interface (s) for exchanging information between the programmable Semiconductor device and parent or associated control or auxiliary systems. Vorrichtung und Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der nichteinrastende abschaltbare Leistungshalbleiter als Komponente eines Schaltnetzteils, Pulsumrichters, Wechselrichters, Hoch- oder Tiefsetzstellers eingesetzt wird. Device and method according to one of the preceding Claims, characterized in that the non-latching turn-off power semiconductor as a component of a switched-mode power supply, pulse converter, inverter, Hoch- or Tiefsetzstellers is used.
DE102005016440A 2005-04-01 2005-04-01 Power semiconductor e.g. insulated gate bipolar transistor, switching operation optimizing device for e.g. inverter, has semiconductor device to activate semiconductor, where progression of voltage is provided such that operation is adapted Withdrawn DE102005016440A1 (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2093868A2 (en) * 2008-02-19 2009-08-26 Alstom Transport S.A. Device and control circuit of an electronic power component, associated control method and distributor.
DE102009006618A1 (en) 2009-01-29 2010-08-05 Daimler Ag Circuit arrangement for operating electrical load in passenger car, has inductor designed to force current flow from control terminal of switch to inductor, when capacitor is charged with load, until capacitor is negatively charged
US7884583B2 (en) 2008-06-30 2011-02-08 Infineon Technologies Austria Ag Speed recognition for half bridge control
DE102011077387A1 (en) * 2011-06-10 2012-07-12 Siemens Aktiengesellschaft Circuit arrangement for switching current in dependence of predeterminable switching signal, has semiconductor circuit breaker for controlling current intensity and driver circuit for receiving switching signal
WO2013156749A1 (en) * 2012-04-20 2013-10-24 Amantys Ltd Communication protocol
WO2012122978A3 (en) * 2011-03-16 2014-05-01 Feaam Gmbh Converter for an electric machine and method for controlling a power circuit breaker
EP2533294A3 (en) * 2011-06-07 2016-02-17 SEMIKRON Elektronik GmbH & Co. KG Solar module and method for its operation
DE102016226147A1 (en) 2016-12-23 2018-06-28 Robert Bosch Gmbh Device and device for operating a power amplifier

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2093868A2 (en) * 2008-02-19 2009-08-26 Alstom Transport S.A. Device and control circuit of an electronic power component, associated control method and distributor.
EP2093868A3 (en) * 2008-02-19 2013-12-04 ALSTOM Transport SA Device and control circuit of an electronic power component, associated control method and distributor.
US7884583B2 (en) 2008-06-30 2011-02-08 Infineon Technologies Austria Ag Speed recognition for half bridge control
DE102009006618A1 (en) 2009-01-29 2010-08-05 Daimler Ag Circuit arrangement for operating electrical load in passenger car, has inductor designed to force current flow from control terminal of switch to inductor, when capacitor is charged with load, until capacitor is negatively charged
WO2012122978A3 (en) * 2011-03-16 2014-05-01 Feaam Gmbh Converter for an electric machine and method for controlling a power circuit breaker
CN103858330A (en) * 2011-03-16 2014-06-11 菲艾姆股份有限公司 Converter for an electric machine and method for controlling a power circuit breaker
US20140159630A1 (en) * 2011-03-16 2014-06-12 Feaam Gmbh Converter for an electrical machine and method for controlling a power circuit breaker
CN103858330B (en) * 2011-03-16 2017-06-16 菲艾姆股份有限公司 Current transformer for motor and the method for controlling power switch
US9444374B2 (en) 2011-03-16 2016-09-13 Feaam Gmbh Converter for an electrical machine and method for controlling a power circuit breaker
EP2533294A3 (en) * 2011-06-07 2016-02-17 SEMIKRON Elektronik GmbH & Co. KG Solar module and method for its operation
DE102011077387A1 (en) * 2011-06-10 2012-07-12 Siemens Aktiengesellschaft Circuit arrangement for switching current in dependence of predeterminable switching signal, has semiconductor circuit breaker for controlling current intensity and driver circuit for receiving switching signal
WO2013156749A1 (en) * 2012-04-20 2013-10-24 Amantys Ltd Communication protocol
US9407253B2 (en) 2012-04-20 2016-08-02 Maschinenfabrik Reinhausen Gmbh Communication protocol
KR20150008115A (en) * 2012-04-20 2015-01-21 아만티스 엘티디 Communication Protocol
CN104247265A (en) * 2012-04-20 2014-12-24 阿曼提斯有限公司 Communication protocol
CN104247265B (en) * 2012-04-20 2017-09-08 赖茵豪森机械制造公司 Device driver, drive control device, electric power switch unit and its method
KR102030099B1 (en) 2012-04-20 2019-10-08 마쉬넨파브릭 레인하우센 게엠베하 Communication Protocol
DE102016226147A1 (en) 2016-12-23 2018-06-28 Robert Bosch Gmbh Device and device for operating a power amplifier

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