DE102005012494A1 - Bonding procedure for connecting microwave circuits, involves using bonding wire that has round cross-section, has no loss or low loss, and is covered with electrically non-conductive dielectric - Google Patents

Bonding procedure for connecting microwave circuits, involves using bonding wire that has round cross-section, has no loss or low loss, and is covered with electrically non-conductive dielectric Download PDF

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DE102005012494A1
DE102005012494A1 DE102005012494A DE102005012494A DE102005012494A1 DE 102005012494 A1 DE102005012494 A1 DE 102005012494A1 DE 102005012494 A DE102005012494 A DE 102005012494A DE 102005012494 A DE102005012494 A DE 102005012494A DE 102005012494 A1 DE102005012494 A1 DE 102005012494A1
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loss
dielectric
lossless
low loss
wire
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Michael Dr. Martin
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SHF Communication Technologies AG
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SHF Communication Technologies AG
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Abstract

The method involves using a bonding wire to connect the surfaces of MMIC (monolithic microwave integrated circuit) and a substrate. The bonding wire has a round cross-section and no loss or low loss, and is covered with electrically non-conductive dielectric. An independent claim is included for the low-loss dielectric used in the bonding wire.

Description

Die Erfindung betrifft eine Anordnung und Verfahren nach den Patentansprüchen 1 bis 6.The The invention relates to an arrangement and method according to claims 1 to 6th

Aus der Fachliteratur ist bekannt, dass die leitenden Verbindungen zwischen MMICs untereinander und zu den umgebenden Signalleitungen meist mit verschweißten Gold oder Aluminium Bonddrähten oder Bondbändchen vorgenommen werden. Dabei hat der Bonddraht die Aufgabe, zusätzlich zur Herstellung der leitenden Verbindung auch den Luftspalt zum nächsten IC oder zum umgebenden Schaltungssubstrat zu überbrücken. Der Luftspalt weist bei üblicher Aufbautechnik eine Breite zwischen 50 und 200 μm auf, so dass sich unter Einbeziehung des Bond-Loops eine Drahtlänge von bis zu 400 μm ergibt. Der in Luft geführte Draht stellt eine störende Serieninduktivität dar, die den Wellenwiderstand im Signalweg erhöht und gleichzeitig die zu übertragende Signalamplitude durch seine Serienimpedanz vermindert. Je höher die betroffenen Signalfrequenzen sind, um so ausgeprägter sind die negativen Auswirkungen der Bondverbindungen.Out The technical literature is known to have the conductive connections between MMICs to each other and to the surrounding signal lines mostly with welded Gold or aluminum bonding wires or bond ribbon be made. The bonding wire has the task in addition to the production the conductive connection also the air gap to the next IC or to the surrounding circuit substrate. The air gap points at more common Construction technique has a width between 50 and 200 μm, so that incorporating the bond loop a wire length of up to 400 μm results. The airborne Wire presents a disturbing series inductance which increases the characteristic impedance in the signal path and at the same time the to be transmitted Signal amplitude is reduced by its series impedance. The higher the affected signal frequencies are, the more pronounced are the negative effects the bonds.

Der Bonddraht verliert seine störenden Eigenschaften, wenn sein Induktivitätswert pro Länge durch einen entsprechenden Kapazitätswert pro Länge dergestalt ergänzt wird, dass für den Leiter ein Wellenwiderstand nahe 50 Ohm erzeugt wird, der mit dem Wellenwiderstand der Signalleitung auf dem Substrat und dem Ein- oder Ausgangswiderstand des MMICs übereinstimmt.Of the Bonding wire loses its disturbing Properties, if its inductance value per length through a corresponding capacity value per length supplemented in this way will that for the conductor is generated a characteristic impedance near 50 ohms, which with the Characteristic impedance of the signal line on the substrate and the input or output resistance of the MMIC matches.

Der Erfindung liegt die Aufgabe zugrunde, den Kapazitätsbelag eines oder mehrerer Bonddrähte soweit zu erhöhen, dass sich die mechanische und elektrische Drahtverbindung in ein Leitungsstück verwandelt, dessen Wellenwiderstand an die Umgebung (Quelle wie Last) angepasst ist. Der durch die Luftumgebung mit der Dielektrizitätskonstante Epsilon relativ = Eins vorgegebene Anfangskapazitätsbelag des Bonddrahtes wird durch seine Einbettung in ein verlustloses oder verlustarmes Dielektrikum (möglichst kleiner Wert von Tangens Delta) mit Epsilon größer Eins entsprechend erhöht. (1)The invention has for its object to increase the capacitance of one or more bonding wires so far that the mechanical and electrical wire connection is transformed into a piece of pipe whose characteristic impedance is adapted to the environment (source and load). The initial capacitance surface of the bond wire given by the air environment with the relative dielectric constant Epsilon = 1 is correspondingly increased by its embedding in a lossless or low-loss dielectric (smallest possible value of tangent delta) with epsilon greater than one. ( 1 )

Das Dielektrikum wird in flüssiger Form per Hand oder mittels Dispenser auf die Bondverbindung aufgetragen und anschließend durch Temperaturbehandlung ausgehärtet.The Dielectric is in liquid Form applied by hand or dispenser on the bond and subsequently cured by thermal treatment.

Bei Schlitz oder Koplanarleitungen (2 und 3) besteht die Bondverbindung zum MMIC aus einer Zwei- oder Dreileiterstruktur, bei der durch zusätzliche Drähte parallel zum Signal führenden Bonddraht die Masseebene des Substrats auf das MMIC mit hinübergezogen wird. Hierbei dient die Aufbringung des Dielektrikums dazu, den Kapazitätsbelag des Signal führenden Leiters gegenüber seinen benachbarten Masseleitern soweit zu erhöhen, dass sich für die Gesamtanordnung eine kontinuierliche Signalführung mit einem nahe bei 50 Ohm liegenden Wellenwiderstand ausbildet.For slot or coplanar lines ( 2 and 3 ), the bond connection to the MMIC consists of a two- or three-wire structure in which the ground plane of the substrate is drawn over to the MMIC by additional wires parallel to the signal-carrying bonding wire. In this case, the application of the dielectric serves to increase the capacitance of the signal-carrying conductor with respect to its adjacent ground conductors to such an extent that a continuous signal routing with a characteristic impedance close to 50 ohms is formed for the overall arrangement.

Claims (6)

Bonddrahtverbindung zwischen einer oder mehreren auf dem MMIC befindlichen Bond Flächen und dem benachbarten MMIC oder dem in geringer Entfernung befindlichen Signalleitungsende auf dem Umgebungssubstrat, dadurch gekennzeichnet, dass der Draht einen runden Querschnitt hat und von einem verlustlosen oder verlustarmen, elektrisch nicht leitenden Dielektrikum umgeben ist.A bonding wire connection between one or more bonding surfaces on the MMIC and the adjacent MMIC or the closely spaced signal line end on the surrounding substrate, characterized in that the wire has a round cross-section and is surrounded by a lossless or low loss electrically non-conductive dielectric. Bondverbindung nach Anspruch 1 dadurch gekennzeichnet, dass an Stelle des Runddrahtes eine Ausführung als Bändchenbond mit einem rechteckigen Querschnitt, z.B. 12 μm hoch und 50 μm breit, sowie Flachdrähte beliebiger ähnlicher Maße Verwendung finden.Bond connection according to claim 1, characterized that instead of the round wire, a version as a ribbon bond with a rectangular Cross-section, e.g. 12 μm high and 50 μm wide, as well as flat wires any more similar Dimensions use Find. Bondverbindung nach Anspruch 1 und 2 für koplanare oder Schlitz-Signalleitungen, dadurch gekennzeichnet, dass die Signal führende Verbindung von mindestens einer, meist zwei Masseverbindungen parallel begleitet wird und sich somit eine GS oder GSG Struktur (ground, signal, ground) ausbildet.Bond connection according to claim 1 and 2 for coplanar or slot signal lines, characterized in that the signal premier Connection of at least one, usually two ground connections in parallel accompanied by a GS or GSG structure (ground, signal, ground). Verlustloses oder verlustarmes Dielektrikum nach Anspruch 1 dadurch gekennzeichnet, dass die Material-Dielektrizitätskonstante dergestalt gewählt ist, dass sich für die Verbindung zwischen MMICs oder zur Substratsignalleitung ein Wellenwiderstand des Signaldrahtes in der Nähe von 50 Ohm ergibt.Lossless or low loss dielectric after Claim 1, characterized in that the material dielectric constant is chosen in such a way that for himself the connection between MMICs or to the substrate signal line Characteristic impedance of the signal wire near 50 ohms. Verlustloses oder verlustarmes Dielektrikum nach Anspruch 1, dadurch gekennzeichnet, dass es im flüssigen Zustand nach der Herstellung der mechanischen, elektrisch leitenden Bondverbindung mit geeigneter Viskosität von Hand oder mittels Dispenser so appliziert wird, dass der unter und neben dem Bonddraht befindliche Luftraum mit einem nicht leitenden Material mit Epsilon größer Eins ausgefüllt ist.Lossless or low loss dielectric after Claim 1, characterized in that it is in the liquid state after the production of the mechanical, electrically conductive bond with suitable viscosity by hand or by dispenser is applied so that the under and near the bonding wire located airspace with a non-conductive Material with epsilon greater than one filled out is. Verlustloses oder verlustarmes Dielektrikum nach Anspruch 1, dadurch gekennzeichnet, dass durch die Beimischung verlustloser oder verlustarmer Zuschlagsstoffe Werte von Dielektizitätskonstanten zwischen 3 und größer 13 je nach Anwendungsfall herstellbar sind.Lossless or low loss dielectric after Claim 1, characterized in that lossless by the admixture or low-loss aggregates Values of dielectric constants between 3 and more than 13 each can be produced according to application.
DE102005012494A 2005-03-16 2005-03-16 Bonding procedure for connecting microwave circuits, involves using bonding wire that has round cross-section, has no loss or low loss, and is covered with electrically non-conductive dielectric Withdrawn DE102005012494A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0438855A (en) * 1990-06-04 1992-02-10 Mitsubishi Electric Corp Package for microwave band ic
EP0563969A2 (en) * 1992-04-03 1993-10-06 Mitsubishi Denki Kabushiki Kaisha High frequency signal transmission tape and apparatus for bonding the high frequency signal transmission tape
JPH09148524A (en) * 1995-11-28 1997-06-06 Mitsubishi Electric Corp High frequency circuit device
US20010015490A1 (en) * 1997-05-22 2001-08-23 Hai Young Lee High speed digital and microwave device package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0438855A (en) * 1990-06-04 1992-02-10 Mitsubishi Electric Corp Package for microwave band ic
EP0563969A2 (en) * 1992-04-03 1993-10-06 Mitsubishi Denki Kabushiki Kaisha High frequency signal transmission tape and apparatus for bonding the high frequency signal transmission tape
JPH09148524A (en) * 1995-11-28 1997-06-06 Mitsubishi Electric Corp High frequency circuit device
US20010015490A1 (en) * 1997-05-22 2001-08-23 Hai Young Lee High speed digital and microwave device package

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