DE102005004145A1 - Device has radiation-emitting semiconducting component(s) with associated heating element(s) for heating the component(s); peak wavelength varies in fluctuation range over defined ambient temperature range in which component operated - Google Patents

Abstract

The device has at least one radiation-emitting semiconducting component (2) for generating radiation at a peak wavelength with at least one associated heating element for heating the semiconducting component. The peak wavelength varies within a fluctuation range over a defined ambient temperature range in which the component is operated. An independent claim is also included for a method of temperature stabilization of the operating temperature of an inventive device.

Description

The The invention relates to a device with a radiation-emitting Semiconductor device and a method for temperature stabilization a radiation-emitting semiconductor component.

The Peak wavelength which emitted from a laser diode of such a device Radiation is known to depend on the operating temperature of the semiconductor device influenced by the ambient temperature of the semiconductor device depends. amendments in the ambient temperature can thus to fluctuations in the peak wavelength of the semiconductor device to lead. However, such fluctuations in the peak wavelength are often undesirable. The Peak wavelength Of a laser diode device is therefore often by additional activities stabilized. For example, in edge emitting laser diodes can be a spectral filter, such as a Bragg grating, as in DFB (Distributed Feedback) or DBR lasers (Distributed Bragg Reflector), for wavelength stabilization be integrated into the component. However, such lasers are mostly only for comparatively low optical output powers suitable. at Semiconductor laser devices with external resonator, such as vertical Emission direction (e.g., VECSEL: Vertical External Cavity Surface Emitting laser) can be used for wavelength stabilization a diffraction grating or a Bragg fiber as a filter element in the resonator to be ordered. This allows resonator internal losses are deliberately increased so that the peak wavelength of the Component is relatively stable. Furthermore, a laser diode for Wavelength stabilization cooled accordingly be, for. B. over a Peltier element or cooling water.

The above measures for wavelength stabilization However, they are comparatively expensive and / or expensive. A spectral filter, for example, must be in the production integrated into a laser diode structure, a diffraction grating or a Bragg fiber can be arranged in the resonator and adjusted. Pettier elements are still relatively expensive, and cooling water circuits, the usually have a high space requirement, in addition to the high cost, too comparatively expensive to realize.

task It is the object of the present invention to provide a device with a radiation-emitting Specify semiconductor device whose peak wavelength simplified is stabilizable. In addition, the device should cost feasible and over a wide ambient temperature range can be reliably used with stabilized peak wavelength be. Furthermore, it is an object of the invention to provide a simplified Method for wavelength stabilization to specify a radiation-emitting semiconductor device.

These Task is achieved by a device having the features of claim 1 and a Method according to claim 26 solved. Advantageous developments are the subject of the dependent Claims.

A inventive device comprises at least one radiation-emitting semiconductor component, wherein the semiconductor device at least one electric heating element is assigned, which is designed for heating the semiconductor device is.

By Heating the semiconductor device by means of the heating element, the change the operating temperature of the semiconductor device with respect to the change the ambient temperature over a predetermined ambient temperature range in which the semiconductor device is intended to operate, can be reduced. The operating temperature of the semiconductor device can thus be stabilized to an operating temperature range be completely covered by the predetermined ambient temperature range is that the ambient temperature range has temperatures, the outside the operating temperature range of the temperature-stabilized semiconductor device lie. Fluctuations in the operating temperature of the semiconductor device can be reduced so, due to the temperature dependence the peak wavelength a radiation generated by the semiconductor device, the fluctuation the peak wavelength in Operation of the semiconductor device over the predetermined ambient temperature range is reduced.

Expensive to produce and / or cost-intensive, integrated in the semiconductor device spectral filter or adjustment-consuming external filter elements can be advantageously dispensed with as well as costly cooling. In particular, the electrical heating element can be designed as an external heating element arranged outside the semiconductor component. An electric heating element facilitates white terhin with advantage the heating control, for example due to a simplified installation of the heating element in the device.

Semiconductor devices for one such device can thus manufactured with advantage in a cost-effective standard process and the peak wavelength can for individually manufactured semiconductor components individually via the each associated heating element to be stabilized.

It It should be noted that in the context of the present application, the term Ambient temperature or

Ambient temperature range partially representative of the term operating temperature or operating temperature range of a not temperature-stabilized, in particular unheated, semiconductor device is used. The operating temperature of a non-temperature-stabilized Semiconductor device differs due to the in operation accumulating heat Although usually from the ambient temperature, but can be significant be influenced by this. The ambient temperature is in any case a lower limit for the operating temperature of a non-temperature-stabilized semiconductor device if the heat loss during operation of the semiconductor device, such as due to operation with low power, negligible is and on additional cooling measures is waived. In the invention, however, the operating temperature of the semiconductor device by electrical heating of the device over the Ambient temperature can be maintained so that the ambient temperature no lower limit for represents the operating temperature.

In a method according to the invention for temperature stabilization of the operating temperature of a radiation-emitting Semiconductor device, in particular a device of the device, the semiconductor device is associated with an electrical heating element, by means of which the semiconductor device falls below a predetermined Setpoint of the operating temperature of the semiconductor device heated becomes. As a result, as already mentioned above, the operating temperature of the semiconductor device held in an operating temperature range be opposite the predetermined ambient temperature range as the operating temperature range diminished is.

In A preferred embodiment is when exceeding the predetermined Setpoint of the operating temperature of the semiconductor device, the heating power of the heating element is reduced or the heating element is switched off. Excessive heating of the semiconductor device and the risk of damage to the overheated Semiconductor device is thus reduced.

In Another preferred embodiment is the semiconductor device for generating radiation of a peak wavelength formed over the predetermined ambient temperature range in which the semiconductor device is intended for operation, varies in a range of fluctuation. The range of variation does not necessarily have to be contiguous, rather, a sudden change in the peak wavelength can also occur.

Compared to the Fluctuation of the unheated semiconductor device with a decisively by the ambient temperature influenced operating temperature can Range of variation of the peak wavelength of the heated semiconductor device diminished be.

Especially may be a width of the fluctuation range of the peak wavelength over heating of the semiconductor device by means of the heating element of a first Width of the unheated semiconductor device to a second width of the heated semiconductor device can be reduced, wherein the second width is smaller than the first width. The fluctuation range the first width covered that of the second width preferably completely. Of the The fluctuation range can be narrowed such that the second width 60%, preferably 55%, or less of the first width.

When Width is hereby the amount of the difference of the smallest and the largest peak wavelength over the Operating temperature range of the semiconductor device viewed. The Width of the fluctuation interval of the unheated semiconductor device is at least about determined by the difference between the maximum and the minimum peak wavelength, the radiation emitted by the semiconductor device for an operating temperature of the semiconductor device via assumes the entire ambient temperature range. The same applies to the width of the fluctuation interval of the temperature-stabilized, heated semiconductor device.

The Fluctuation of the peak wavelength of the semiconductor device can thus total by means of more targeted Temperature stabilization over the electrical heating element can be advantageously reduced. In the The result is the peak wavelength of the semiconductor device stabilized.

Prefers is the semiconductor device for operation in an ambient temperature range, the temperatures lower and greater than 0 ° C, in particular from -40 ° C to 85 ° C, intended. By means of electric heating can be achieved that the operating temperature of the semiconductor device at temperatures, in particular consistently, in the range greater than 0 ° C, in particular in the range of 20 ° C to 85 ° C, lies. One Operating temperature window of the semiconductor device can by a first window of the unheated, about a width of 125 K, on a second window of the heated semiconductor device, such as a Width of 65 K, narrowed be. Such temperatures can in outdoor applications the semiconductor device, such as in a device in the vehicle area, occur.

In Another preferred embodiment is the semiconductor device a, preferably electrical, temperature sensor for monitoring associated with the operating temperature of the semiconductor device. Prefers the operation of the electric heating element by means of the temperature sensor, for example by means of a temperature sensor generated in the temperature sensor or one detected signal to be controlled.

One NTC element with negative temperature coefficient (negative temperature Coefficient), such as an NTC thermistor (thermistor: a temperature-dependent resistor), is particularly suitable as a temperature sensor.

On the Temperature sensor is preferably the operating temperature of the semiconductor device determined. When falling below the predetermined setpoint, a Heating the semiconductor device caused by the heating element become. If the setpoint is exceeded is expediently reduces the heating power or the heating element off. Lies the operating temperature already over the setpoint, the heating element is preferably not operated. This heating control may optionally have an external evaluation element take place, which determined by means of the temperature sensor operating temperature of Semiconductor device monitored and compares with the setpoint.

In Another preferred embodiment is the semiconductor device a detector element for detecting the emitted from the semiconductor device Radiation associated with the detection of radiation with wavelengths in a predetermined, preferably contiguous, detection area is trained. Such detector elements are often in a sensor device with a semiconductor device as a transmitter and the detector as a receiver provided, wherein the detection area to avoid unwanted Ambient light influences which often cause noise of the detector signal, preferably preferably narrow.

Of the Detection area in a conventional such device is often chosen to be the range of variation the peak wavelength over the Ambient temperature range includes detection of the radiation the unheated semiconductor device having an operating temperature substantially over entire ambient temperature range. In the invention In contrast, the detection area can be designed such that the fluctuation range of the peak wavelength of the unheated semiconductor device wavelength outside of the detection area and the detection area has the fluctuation range the peak wavelength the temperature-stabilized semiconductor device, preferably completely, covered. The detector element can thus be in a device with a temperature-stabilized semiconductor device across from a device with a non-temperature-stabilized semiconductor device be executed with a narrower detection range and ambient light influences on a detector signal can be reduced advantageous. As radiation detectors are suitable For example, especially photodiodes, such as PIN or avalanche photodiodes (APD: Avalanche Photodiode), preferably based on Si, whose detection range by appropriate filters to the semiconductor device or the fluctuation range the peak wavelength the heated semiconductor device is adapted.

In a further preferred refinement, the semiconductor component is designed as a semiconductor laser component, in particular a high-power laser component. Due to the comparatively narrow-band emission spectra of semiconductor laser components, the temperature dependence of the peak wavelength often makes itself particularly noticeable in semiconductor laser components. The semiconductor laser component can be designed, for example, as an edge-emitting laser diode or as a laser diode bar. A laser diode bar in this case comprises a plurality of laser diode structures (laser diode channels) which are monolithically integrated and arranged on a common substrate. Furthermore, the semiconductor structure Element as a surface-emitting semiconductor device, in particular semiconductor laser device, be executed. By way of example, the surface-emitting semiconductor component can be embodied as a vertical-emitting semiconductor laser component with an internal resonator (VCSEL: Vertical Surface Emitting Laser) or with an external resonator (VECSEL). The semiconductor laser component is preferably provided for pulsed operation, in particular in a sensor device with a detector element associated with the component.

In Another preferred embodiment is the semiconductor device on a carrier, about a circuit board, arranged. Preferably, the heating element also on the carrier arranged. This will, in particular over a comparatively close adjacent arrangement of the heating element and the semiconductor device, facilitates efficient heating of the semiconductor device. Furthermore, the heating element and / or optionally the temperature sensor, preferably surface mountable (SMD: Surface Mountable Device), whereby an assembly of the heating element on the carrier and a compact design of the device can be facilitated.

In In a further preferred embodiment, the heating element is as Heating resistor executed. By Applying a voltage to the heating resistor can be via current flow heat is generated accordingly by the heating resistor and the semiconductor device be heated.

In In a further preferred embodiment, the heating element is in carrier integrated of the semiconductor device. The carrier can thus already with integrated Heating element to be provided, thereby providing an additional Disposed arrangement of a separate heating element on the support can be. For this purpose, the support preferably has a multilayer structure on and the heating element is used as Heizwiderstandsschicht in the multi-layer structure integrated. Particularly suitable for this purpose is a multilayer printed circuit board, the one, preferably in one or more, approximately meandering, Heizwiderstandsbahn (s) structured and / or Cu-containing, Heizwiderstandsschicht having.

In In another preferred embodiment, the heating element is between the carrier and the semiconductor device or the semiconductor device is on arranged the heating element. By such proximity of heating element and semiconductor device becomes an efficient, planar heating the semiconductor device facilitated.

In Another preferred embodiment of the invention is between the carrier and an intermediate carrier (submount) disposed on the semiconductor device. By means of such a subcarrier, the risk of Shading of the radiation emitted by the semiconductor device radiation reduces an edge of the carrier become.

In An advantageous development of the subcarrier as Heating element formed or the intermediate carrier contains the heating element. in this connection the heating element is preferably a Heizwiderstandsbereich, the in the subcarrier can be trained. Such a heating resistor area can by implantation, such as proton implantation, in an area of the subcarrier be realized. Preferably, the intermediate carrier contains for this purpose a semiconductor material, such as Si. The heating resistor region is preferred still in the intermediate carrier close to the surface on the surface of the semiconductor component facing the subcarrier accomplished and / or on this surface electrically connectable.

In According to another preferred embodiment, the heating element is electrical isolated from the semiconductor device. Thus, a separate one electrical control of heating element and semiconductor device possible. In particular, that can Heating element and the semiconductor device with advantage independently operate.

In In a further preferred embodiment, the heating element is separate thermally conductively connected to the semiconductor device. The efficiency the heating can be increased become. For this purpose, for example, a thermal connection conductor, containing Cu, may be provided, the semiconductor device and connects the heating element thermally conductive.

In an advantageous embodiment of the invention, the temperature sensor is separately thermally connected to the semiconductor device. Due to a thermally conductive connection, the temperature can be monitored more efficiently, since the risk of a deviation of the operating temperature determined by means of the temperature sensor from an actual operating temperature of the semiconductor component is reduced. To improve the thermal connection, for example, another thermal Verbin tion conductor, containing about Cu, be provided, which connects the semiconductor device and the temperature sensor thermally conductive.

In Another preferred embodiment of the invention is the Heating the semiconductor device via the material of the carrier. Especially can the heat done by an electrically insulating base material of the carrier. On the formation of separate thermal connection conductor can to be dispensed with.

Further Features, benefits and benefits The invention will become apparent from the description of the following embodiments in conjunction with the figures.

It demonstrate:

1 in 1A a schematic plan view of a first embodiment of a device according to the invention and in 1B a corresponding sectional view along the line AA 1A .

2 in 2A a schematic plan view of a second embodiment of a device according to the invention from above and in 2 B a schematic top view from below,

3 a schematic plan view of a third embodiment of a device according to the invention in 3A and a corresponding schematic sectional view in FIG 3B .

4 a schematic plan view of a fourth embodiment of a device according to the invention,

5 a schematic sectional view of a fifth embodiment of a device according to the invention in 5A and a corresponding schematic sectional plan view of a section taken along the line AA in FIG 5B .

6 a schematic plan view of a sixth embodiment of a device according to the invention

7 the temperature dependence of the emission spectrum of a semiconductor laser device, such as according to the embodiment of 6 , depending on the electrical heating power,

8th the temperature dependence of the resistance of a heating resistor layer,

9 a comparison of the temperature change of the operating temperature of a semiconductor laser device as a function of the heating power for a heated by various methods semiconductor laser device,

10 the dependence of the optical peak power of a semiconductor laser device on the change of the operating temperature of the semiconductor laser device,

11 a comparison of the temperature change .DELTA.T the operating temperature of the semiconductor laser device as a function of the heating power for a semiconductor laser device heated by various methods,

12 a comparison of the temperature determination of the operating temperature of a semiconductor laser device via two different methods and

13 the thermal transient response of the semiconductor laser device for three heating variants.

Same, similar or equivalent elements are in the figures with provide the same reference numerals.

1 shows a first embodiment of a device according to the invention with reference to a cal matic supervision in 1A and a schematic sectional view in FIG 1B along the line AA.

A radiation-emitting semiconductor device 1 the device is an electrical heating element 2 assigned, which is designed for heating the semiconductor device. The heating element and the semiconductor component are provided with a, in particular electrical, temperature sensor 3 on one, in particular common, carrier 4 arranged. Between the semiconductor device 1 and the carrier 4 is an intermediate carrier 6 arranged, due to the increased by means of the intermediate carrier relative to the carrier arrangement of the semiconductor device, the shading of a radiation emitted by the semiconductor device radiation 12 through the carrier 4 reduced.

The semiconductor device 1 is still a detector element 13 , such as a PIN or avalanche photodiode, for detecting radiation generated by the semiconductor device 12 assigned. The detector element may also be on the carrier, as shown 4 be arranged. A compact design of such a sensor device is facilitated.

Preferably, a separate thermally conductive connection is formed between the heating element and the semiconductor component and / or the semiconductor component and the temperature sensor. For example, this is a first thermal connection conductor 5a with the heating element 2 and the semiconductor device 1 and a second connection conductor 5b thermally conductively connected to the semiconductor device and the temperature sensor. Thermally, the connection conductors are preferably not connected directly conductive. For example, the connection conductors contain 5a and 5b a metal, such as Cu.

Furthermore, the carrier is preferably designed as a printed circuit board, for example as PCB (PCB: Printed Circuit Board). On the representation of printed conductors of the printed circuit board and electrical connections of the heating element 2 , of the semiconductor device 1 and the temperature sensor 3 was omitted for clarity. Particularly preferably, the semiconductor component, the heating element and the temperature sensor via printed conductors of the printed circuit board, in particular electrically separated, connectable and / or controllable. Preferably, the thermal connection conductors are integrated in the carrier.

alternative However, it is also possible to dispense with the thermal connection conductors become. The heating of the semiconductor device is then preferably via the Material of the carrier. In particular, the heat supply to the semiconductor device in this case by an electrically insulating Base material, e.g. a plastic material, carried the carrier.

The electric heating element, the semiconductor device and / or the temperature sensor is preferably surface mountable accomplished and can, for example, on the carrier soldered be. For example, the temperature sensor is surface mountable NTC thermistor and / or the electric heating element as a surface mountable Heating resistor executed. The semiconductor component is preferably without an additional housing the carrier mounted (chip on board).

A thermally conductive connection between the electric heating element 2 and / or the temperature sensor 3 and the semiconductor device 1 can with advantage by means of the intermediate carrier 6 be achieved. For this purpose, the intermediate carrier is expediently formed with a correspondingly high thermal conductivity. For example, the intermediate carrier contains a semiconductor material, such as Si, or a metal, such as Cu, or an alloy, such as CuWo. In addition to a comparatively high thermal conductivity, such materials can also be distinguished by good adaptation to the thermal expansion coefficient of the semiconductor component, which reduces the risk of thermally induced stresses in the semiconductor component.

It should be noted that the connection conductors 5a or 5b not necessarily, as shown, must be arranged on the semiconductor device side facing the carrier. A connection conductor may also extend from the side of the carrier on which the semiconductor component is arranged to the side of the carrier opposite to the semiconductor component. The heating element and / or the temperature sensor can thus be arranged in a simplified manner on the side of the carrier opposite to the semiconductor component and thermally conductively connected to the semiconductor component via one or a plurality of thermal connecting conductors, the operating efficiency of the device notwithstanding such arrangement advantageously not significantly reduced.

Possibly may also be a thermally conductive compound via the carrier, preferably by a electrically insulating base material, such as a plastic, the support respectively.

The semiconductor device 1 preferably has an active zone provided for generating radiation 9 on, for example, in a on a substrate 10 arranged semiconductor body 11 is trained. Conveniently, the substrate 10 from an epitaxial substrate of the semiconductor body 11 manufactured.

The semiconductor component can be embodied, for example, as a semiconductor laser component, in particular for pulsed operation. The semiconductor laser component is preferably designed as an edge-emitting laser diode. This preferably limit opposite side surfaces 7 and 8th (Reflector surfaces) of the semiconductor laser device, an optical resonator (eg, a Fabry-Perot resonator) of the device.

to Radiation generation in the infrared spectral range is a GaAs-based Semiconductor body, grown especially on a GaAs epitaxial substrate, especially suitable.

If the semiconductor component is designed as a laser diode bar, then a plurality of semiconductor bodies is preferred 11 next to each other on the common substrate 10 arranged.

By means of the temperature sensor 3 the operating temperature of the semiconductor device is monitored such that falls below a predetermined target value of the operating temperature of the semiconductor device, the semiconductor device by means of the electric heating element 3 is heated. If the operating temperature exceeds the predetermined setpoint, the heating power of the heating element is reduced or the heating element is switched off. Preferably, the semiconductor device and the temperature sensor are arranged immediately adjacent to each other, whereby the monitoring of the operating temperature is facilitated.

For monitoring the operating temperature can this, for example, over the known temperature dependence of the resistance of the NTC thermistor, determined by the temperature sensor and by means of a, optionally arranged on the support, Control circuit, such as a transistor circuit, the preferred the determined operating temperature compares with the setpoint, regulated become.

Opposite one Operating temperature of the semiconductor device, via a varies given ambient temperature range, so the fluctuation range the operating temperature dependent peak wavelength of the Semiconductor device can be reduced by the semiconductor device via the electric heating element specifically heated and temperature stabilized becomes.

The detection range of the detector element can thus be designed to be narrower with advantage than a fluctuation interval of the peak wavelength of the radiation 12 above the ambient temperature range. The fluctuation range of the peak wavelength of the temperature-stabilized semiconductor component is preferably completely covered by the detection range of the detector element.

This results in an optimized ratio of the radiation 12 generated detector signal to a, caused for example by ambient light influences, background noise.

Of the Operating temperature range of the semiconductor device, for example from a given ambient temperature range with temperatures from -40 ° C up to 85 ° C be stabilized to an operating temperature range of 20 ° C to 85 ° C. by virtue of the temperature dependence the peak wavelength becomes the peak wavelength of the semiconductor device as a result stabilized.

The temperature dependence the peak wavelength can, in particular in an edge emitting laser diode for Generation of infrared radiation, for example in a spectral range of 800 to 1000 nm, 0.3 nm / K amount. In an ambient temperature window width 125K, about -40 ° C up to 85 ° C, as the operating temperature range of the unheated semiconductor device this means a significant fluctuation of the peak wavelength in one Interval of a width of about 38 nm, the peak wavelength increases with increasing operating temperature. Becomes the operating temperature by means of electric heating to a range above narrower Temperature windows, such as one of the width of 65 K, approximately from 20 ° C to 85 ° C, stabilized, Thus, the width of the fluctuation range of the peak wavelength, about to a width of about 20 nm for one Operating temperature window of 65 K width, to be reduced. Also with a narrowed by appropriate filter detection area of a Width of about 20 nm can thus be generated by the semiconductor device radiation over the Detector element in the operation of the semiconductor device via the Ambient temperature range can be reliably detected. Ambient light influences the detector signal is through the narrow detection area with Advantage reduced.

In 2 is based on two schematic views in 2A and 2 B A second embodiment of a device according to the invention shown. In essence, this embodiment corresponds to the in 1 shown embodiment. In contrast, two electrical surface mountable heating resistors, for example, each with a resistance of 56 Ω, about the design 1206, provided, which as well as the NTC thermistor as a temperature sensor 3 For example, a surface-mountable 1kΩ NTC resistor with a resistance of 1kΩ at room temperature (298K) on top of the semiconductor device 1 opposite side of the carrier 4 are arranged. The semiconductor component is in this case designed as a laser diode array (laser diode bar), in particular as a pulse laser diode array. Further details on laser diode bars are described in greater detail in the textbook "Roland Diehl, High Power Diode Lasers, Springer (2000)", the disclosure content of which is hereby explicitly incorporated by reference in the present application (see in particular pages 173 to 218 there). ,

The Array may be formed such that the individual laser diode channels of the array can be controlled separately from each other or the individual channels only together can be operated. In the latter case, the channels connected in parallel and have a common to all channels Contact and one all channels common counter contact on. For a separate control of the individual channels, for example, a with all channels be provided conductively connected counter contact, wherein the individual channels each having a separate single contact over the the current flow through the respective channel can be controlled. The individual channels are over then the respective individual contact independently operable.

On each of the example, sixteen laser diode channels of the array in this case two bonding wires for electrical contacting are assigned. The opposite pole of the diode contact is made by means of bonding wires, for example with four bonding wires, for example, one on the intermediate carrier 6 , Preferably, between the semiconductor device and the intermediate carrier, arranged, such as metal-containing, connection layer, conductive with the semiconductor device and electrical contacts on the support 4 , such as tracks of a PCB carrier, are connected. The 2A and 2 B show views of the wearer 4 from the side of the semiconductor device 1 in 2A and the opposite side of the carrier 4 in 1B ,

3 shows a schematic plan view of a third embodiment of a device according to the invention in 3A and a corresponding schematic sectional view in FIG 3B , The embodiment according to 3 is essentially the same as in 1 . shown In contrast, a discrete electrical heating element was dispensed with. For reasons of clarity, a representation of the detector element and the thermal connection conductor would also be dispensed with, which of course can also be provided in the third embodiment.

In contrast to the embodiment according to 1 is the semiconductor device 1 in 3 on the heating element 2 arranged. In particular, the heating element can be arranged between the carrier and the semiconductor component. The heating element 2 is preferred as Heizwiderstandsbereich 20 in the subcarrier 6 integrated. For example, the Heizwiderstandsbereich 20 produced by proton implantation in a region of a Si subcarrier. An arrangement of the heating resistor area 20 , as in 3B shown, directly on the surface is not mandatory. Rather, the heating resistor region may also be formed as a buried region, in particular below the surface of the intermediate carrier facing the intermediate carrier, in the intermediate carrier. Accordingly, the Heizwiderstandsbereich 20 from the semiconductor device 1 and / or the substrate 10 is spaced.

Prefers the Heizwiderstandsbereich on a lateral extent, the is larger as the lateral extent of the semiconductor device, whereby a area and efficient electrical heating of the semiconductor device in compared with discrete heating elements in immediate proximity to the semiconductor device is relieved.

4 shows a schematic plan view of a fourth embodiment of a device according to the invention. The semiconductor device 1 is appropriate 2 designed as a pulse laser diode array. Between the carrier 4 and the semiconductor device 1 are two electrical heating elements 2 , For example, in the form of two surface-mountable heating resistors, which are electrically isolated from the semiconductor device arranged. The temperature sensor is as in 2 arranged on the side opposite the semiconductor device side of the carrier. Such an arrangement of the electric heating element can be used for simulation and for efficiency tests of a heating element integrated in the intermediate carrier, for example according to FIG 3 , her be attracted.

5 shows a schematic sectional view of a fifth embodiment of a device according to the invention in 5A and a corresponding schematic sectional plan view of a section taken along the line AA in FIG 5B ,

In essence, the fifth embodiment corresponds to the third embodiment 3 , In contrast, the electric heating element in the carrier 4 integrated. The carrier 4 here has a multi-layer structure, which is a first layer 41 on the semiconductor device 1 facing side and a second layer 42 on the side facing away from the semiconductor device side, between which a Heizwiderstandsschicht 43 is arranged.

The heating resistor layer contains, for example, Cu and / or runs approximately as in 5B shown as a meandering path. The heating resistor layer 43 is about the first shift 41 and the subcarrier 6 thermally conductive with the semiconductor device 1 connected. The first layer is preferred 41 and / or the second layer 42 designed electrically insulating. The thermally conductive connection to the intermediate carrier or the semiconductor component can in particular via the electrically insulating material of the first layer 41 respectively.

Furthermore, if appropriate, additionally or alternatively, a thermal connection conductor extending through the first layer 41 extends and for example via the intermediate carrier 6 with the semiconductor device 1 and the Heizwiderstandsschicht, preferably directly, thermally conductively connected, be provided.

The electric heating element can in this embodiment advantageously already integrated with the carrier 4 be made. An additional arrangement of a discrete heating element or a design of the intermediate carrier as a heating element can thus be dispensed with.

6 shows a schematic plan view of a sixth embodiment of a device according to the invention, which substantially the in 4 shown corresponds. In contrast, a heating resistor layer 43 according to the comments on 5 in the carrier 4 integrated and the temperature sensor 3 and the semiconductor device 1 are arranged on the same carrier side.

The relationships explained with reference to the following figures have been applied to a semiconductor laser device, for example according to the in FIG 2 shown, determined.

In 7 the temperature dependence of the emission spectrum of the semiconductor laser device is shown. In this case, a multilayer structure with a meandering Heizwiderstandsbahn, such as Cu, a resistance of 65 Ω at room temperature for electrical heating of the semiconductor laser device was used.

Is placed in 7 the optical intensity of the radiation generated by the semiconductor laser device in arbitrary units and in dependence on the wavelength of the radiation generated by the semiconductor laser device in nm. The semiconductor laser device is in particular for generating infrared radiation, such as a wavelength greater than or equal to 900 nm formed , For heating, different heating voltages were applied to the heating resistor track. The following heating voltages correspond to the following emission distribution curves of the component:

in this connection is clearly the temperature dependence the peak wavelength - the wavelength of the Emission maximums of the respective distribution - to detect, where larger heating voltages usually higher temperatures and the peak wavelength shifts to higher wavelengths for increasing voltages. With increasing voltages, the emission distribution is flattened.

In 8th is the temperature dependence of the resistance R of a heating resistor layer of Cu in a multi-layer structure in ohms as a function of the heating power P_h shown in watts. At room temperature, the resistance is about 65 Ω. For the curve 111 was the temperature dependence of the resistance R of the temperature change .DELTA.T - compared to the room temperature - about the relationship R (T) = R N · (1 + α · ΔT) determined with α = 0.004 1 / K and R _N = 65Ω. For the curve 112 the resistance R was determined from the heating voltage and the measured heating current. The courses of resistance obtained in these different ways are in good approximation.

In the case of a surface-mounted heating resistor, for example of the type mentioned above (see the comments on 2 ) with α = 0.0001 1 / K, the temperature dependence of the resistance is usually negligible.

verknüpft ist, ermittelt. Hierbei sind: B= 3263 1/K, R_N= 1 kΩ und T_N= 298 K. Diese Ergebnisse sind durch die Datenpunkte 114 wiedergegeben. 9 shows a comparison of the temperature determination of the operating temperature of the heated with the heating power P_h means of a heater integrated in the support layer heated semiconductor laser device on the known temperature dependence of the peak wavelength and a 1 kΩ NTC resistor as a temperature sensor. Plotted is the temperature change .DELTA.T compared to the room temperature T _N as a function of the heating power. The data points 113 the operating temperature was determined from the temperature dependence of the peak wavelength, which changes approximately 0.30 nm per K for an infrared emitting semiconductor laser device. For the 1kΩ NTC resistor, the temperature T of the temperature sensor was measured over the measured temperature dependent resistance R (T), which is T over the relationship

linked, determined. Here are: B = 3263 1 / K, R _N = 1 kΩ and T _N = 298 K. These results are indicated by the data points 114 played.

Out 9 It can be seen that the temperature of the semiconductor laser component determined via the peak wavelength substantially coincides with the temperature of the temperature sensor, so that the operating temperature of the semiconductor laser component can be reliably determined via the temperature sensor. A fit line for a linear relationship between the data points 113 arises too y = 64,085 x and one for the data points 114 to y = 64.114 x

In 10 the dependence of the optical peak power of the semiconductor laser device P_opt in watts on the change .DELTA.T the operating temperature of the semiconductor laser device in Kelvin is shown with respect to the room temperature. It can be seen that the optical peak power of the semiconductor laser device decreases substantially linearly with increasing temperature. A fit line for the data points corresponding to the measured peak powers 115 arises too y = -0.2493 · x + 71.83.

The Accordingly, decrease of optical peak power with increasing temperature is about -0.25 W / K.

In 11 a comparison of the temperature change .DELTA.T of the semiconductor laser device in Kelvin as a function of the heating power P_h in watts for a heated in various ways semiconductor laser device is shown. For the curve 116 For example, the semiconductor laser device was formed by means of two discrete heating resistors (according to US Pat 2 each with 56 Ω), for the curve 117 by means of a heating resistor layer integrated in the carrier (according to 6 with a resistance of 65 Ω at room temperature) and for the curve 118 by means of two arranged between the semiconductor laser device and the carrier heating resistors (according to 4 each with 56 Ω) heated. The latter variant simulated a heating resistor area integrated in the intermediate carrier.

In 11 it can be seen that in the curve 118 comparatively small heat outputs cause relatively high temperature changes (approximately: 85 K at 0.58 W heating power compared to 70 K at 1.2 W in curve 117 and 60 K at 1.2 W in turn 116 ). A partial fit curve results for the curve 116 to y = -10,536x 2 + 62,039 · x, for the curve 117 to y = -12,761 x 2 + 75.74 x and for the curve 118 to y = -39.48 x 2 + 169.64 · x

One in the subcarrier integrated heating resistor region is for heating the semiconductor device therefore particularly suitable, but also with comparatively high Effort and costs associated.

A Heating over a Heizwiderstandsschicht is in contrast cheaper, with discrete heating resistors are particularly easy to handle and inexpensive.

Especially can SMD heating resistors by surface mounting particularly easy to be integrated into the device.

12 shows a comparison of the temperature determination of the operating temperature of the heating power P_h by means of two arranged between the carrier and semiconductor laser device heating elements semiconductor laser device on the known temperature dependence of the peak wavelength on the one hand and a spaced apart from the semiconductor device 1 kΩ NTC resistor (see the comments to 9 ) as a temperature sensor on the other. In each case, the temperature change ΔT is plotted against the room temperature as a function of the heat output. The curve 119 the temperature change determined by the NTC resistor deviates significantly from the curve 120 , which was determined by the peak wavelength. The temperature change determined by the peak wavelength is greater than the temperature change detected by the NTC resistor. The temperature determined by means of the peak wavelength corresponds approximately to the operating temperature and the temperature determined by means of the NTC resistor corresponds more closely to the ambient temperature. A closely adjacent arrangement of the heating resistors to the semiconductor laser device thus results in an extremely efficient heating. A fit straight for the curve 119 arises too y = 80,546 x and for the curve 120 to y = 149.95 x

13 shows the thermal transient response of the semiconductor laser device for the above three heating variants based on the dependence of the normalized to 1 operating temperature T_b of the semiconductor laser device in arbitrary units of the heating time T_h of the semiconductor laser device in seconds. The curve 121 corresponds to the variant according to 4 with two heating resistors, which are arranged between the semiconductor laser device and the carrier, the curve 122 the variant with the integrated in the carrier Heizwiderstandsschicht according to 6 and the curve 123 the variant with the two discrete heating resistors according to 2 , The operating temperature for all three variants reaches the maximum value after about 100 s, which corresponds to the achievement of the thermal equilibrium between the heating element, the environment and the semiconductor laser device.

The thermal time constant τ, after the operating temperature of the semiconductor laser device the half its maximum temperature is, is for the three variants between, each including, about 20 s and about 25 s.

The This patent application claims the priority of the German Patent Application DE 10 2004 009 588.4 of 25 February 2004, the Full disclosure hereby explicitly by reference to the present patent application is incorporated.

The The invention is not by the description based on the embodiments limited. Rather, the invention encompasses every new feature as well as every combination of features, in particular any combination of features in the claims includes, even if this feature or this combination itself not explicitly in the patent claims or embodiments is specified.

Claims (32)

Device having at least one radiation-emitting semiconductor component ( 1 ), wherein the semiconductor device at least one electrical heating element ( 2 ) associated with heating the semiconductor device. Device according to Claim 1, characterized in that the semiconductor component ( 1 ) for generating radiation ( 12 ) of a peak wavelength is formed, which varies over a predetermined ambient temperature range in which the semiconductor device is provided for operation in a range of variation. Apparatus according to claim 2, characterized in that a width of the fluctuation range of the peak wavelength via heating of the semiconductor device ( 1 ) by means of the heating element ( 2 ) is reduced from a first width of the unheated semiconductor device to a second width of the heated semiconductor device, wherein the second width is smaller than the first width. Device according to Claim 2 or 3, characterized in that the semiconductor component ( 1 ) a detector element ( 13 ) for detecting the radiation emitted by the semiconductor component ( 12 ), the detector element for detecting radiation having wavelengths in a predetermined detection range is formed, the fluctuation range of the peak wavelength of the unheated semiconductor device has wavelengths outside the detection range, and the detection range covers the fluctuation range of the peak wavelength of the heated semiconductor device. Device according to one of the preceding claims, characterized in that the semiconductor device ( 1 ) a temperature sensor ( 3 ) is assigned to monitor the operating temperature of the semiconductor device. Apparatus according to claim 5, characterized in that the operation of the heating element ( 2 ) by means of the temperature sensor ( 3 ) is controllable. Apparatus according to claim 5 or 6, characterized in that the temperature sensor ( 3 ) one NTC element is. Device according to one of the preceding claims, characterized in that the semiconductor component is in the form of a semiconductor laser component accomplished is. Device according to claim 8, characterized in that that the semiconductor laser device is provided for pulsed operation is. Device according to one of the preceding claims, characterized in that the semiconductor component is mounted on a support ( 4 ) is arranged. Device according to claim 10, characterized in that the carrier ( 4 ) is a printed circuit board. Device according to claim 10 or 11, characterized in that the heating element ( 2 ) on the support ( 4 ) is arranged. Device according to one of the preceding claims, characterized in that the heating element ( 2 ) is surface mountable. Device according to one of the preceding claims, characterized in that the heating element ( 2 ) is designed as a heating resistor. Device according to one of claims 10 to 14, characterized in that the heating element ( 2 ) in the carrier ( 4 ) is integrated. Device according to claim 15, characterized in that the carrier has a multilayer structure ( 41 . 42 . 43 ) and the heating element as Heizwiderstandsschicht ( 43 ) is integrated in the multilayer structure. Device according to one of the preceding claims, characterized in that the heating element ( 2 ) electrically from the semiconductor device ( 1 ) is isolated. Device according to one of the preceding claims, characterized in that the semiconductor component ( 1 ) on the heating element ( 2 ) is arranged. Device according to one of claims 10 to 18, characterized in that between the carrier ( 4 ) and the semiconductor device ( 1 ) an intermediate carrier ( 6 ) is arranged. Device according to claim 19, characterized in that the intermediate carrier ( 6 ) as a heating element ( 2 ) is formed or contains the heating element. Device according to claim 19 or 20, characterized in that the heating element has a heating resistance region ( 20 ). Apparatus according to claim 21, characterized in that the heating resistor region ( 20 ) by implantation in the intermediate carrier ( 6 ) is trained. Device according to one of claims 19 to 22, characterized in that the intermediate carrier ( 6 ) contains a semiconductor material. Device according to one of the preceding claims, characterized in that the semiconductor component ( 1 ) for operation in an ambient temperature range, the temperatures of less than and greater than 0 ° C, in particular from -40 ° C to 85 ° C, comprises is provided. Apparatus according to claim 24, characterized in that the operating temperature of the semiconductor device ( 1 ) at temperatures in the range greater than 0 ° C, in particular in the range of 20 ° C to 85 ° C, is located. Method for temperature stabilization of the operating temperature of a radiation-emitting semiconductor component ( 1 ), wherein the semiconductor device is an electrical heating element ( 2 ) is assigned, by means of which the semiconductor device is heated when falling below a predetermined desired value of the operating temperature of the semiconductor device. Method according to claim 26, characterized in that that when crossing the predetermined desired value of the operating temperature of the semiconductor device reduces the heating power of the heating element or the heating element is turned off. Method according to Claim 26 or 27, characterized in that the semiconductor component ( 1 ) for generating radiation ( 12 ) of a peak wavelength is formed, which varies over a predetermined ambient temperature range in which the semiconductor device is provided for operation in a range of variation. A method according to claim 28, characterized in that a width of the fluctuation range of the peak wavelength via heating of the semiconductor device ( 1 ) by means of the heating element ( 2 ) is reduced from a first width of the unheated semiconductor device to a second width of the heated semiconductor device, wherein the second width is smaller than the first width. Method according to one of the preceding claims, characterized in that the operating temperature of the semiconductor device ( 1 ) by means of a semiconductor device associated with the temperature sensor ( 4 ) is monitored. Method according to claim 30, characterized in that the operation of the heating element ( 2 ) by means of the temperature sensor ( 4 ) is controlled. Method according to one of claims 26 to 31, characterized that a device according to a the claims 1 to 25 comprises the semiconductor device.