DE102004060188B4 - Process heating chamber and use of the same - Google Patents

Abstract

A process heating chamber (400) having a plurality of flashlights (404, 406) and a plurality of point lamps (101) for heating an article (407) disposed in the process heating chamber (400), at least a portion of the flashlights (404, 406) in a first plane and at least a portion of the point lamps (101) are disposed in a second plane on the same side within the process heating chamber (400) relative to the article (407), the first plane and the second plane parallel to each other and each parallel to the processing surface of the article (407) are arranged.

Description

The invention relates to a process heating chamber and a use thereof.

Currently, a distinction is made between two different technologies, particularly in a Rapid Heat Processor (RTP) process heating chamber).

In a Mattson-AST RTP process heating chamber, flashlights are provided above and below the wafer in the RTP process heating chamber for rapid heating of a wafer. The flashlights, which are usually designed as halogen lamps, lead to a relatively homogeneous irradiation of the wafer, whereby a relatively good temperature homogeneity is achieved during the heating of the wafer.

2 shows a schematic diagram of such a RTP process heating chamber 200 according to the prior art in plan view, in which over a wafer 201 as well as under the wafer 201 a plurality of mutually parallel spaced-apart halogen flashlights 202 for heating the wafer 201 are provided.

When using flashlights, however, there is a local control of the temperature at predetermined positions above or below the wafer 201 not or only very difficult and with great technological effort possible.

According to a technology currently being pursued by Applied Materials, a plurality of point lamps are used in an RTP process heating chamber, wherein for heating the wafer in the RTP process heating chamber, it moves under the point lamps, preferably at a speed of up to is rotated about 90 revolutions per minute. Only by rotating the wafer is it possible, according to the RTP process heating chamber of Applied Materials, for a relatively homogeneous irradiation of the wafer, and thus a possibly sufficient temperature homogeneity in the course of heating the wafer to be achieved.

3 shows a schematic diagram of such a RTP process heating chamber 300 according to the prior art in plan view, in the above in the process heating chamber 300 recorded wafers 301 a plurality of juxtaposed predetermined positions arranged halogen point lamps 302 are provided. By means of the point lamps 302 becomes the wafer 301 heated.

When using point lamps 302 is however with resting wafer 301 and thus a static irradiation of the surface of the wafer can not be achieved sufficient temperature homogeneity.

Furthermore, it is from A.S.T. Electronics GmbH, Technical Notice 21, Edited by T. Theiler, Simulation Results on the Intensity Distribution of Object Plane Using Crossed and Non-Crossed Lamp Arrays Arranged in Parallel Above and Below, March 1994, offset from one another and spaced parallel to each other To arrange flashlights in two different levels. Furthermore, it is from A.S.T. Electronics GmbH, Technical Notice 21, Edited by T. Theiler, Simulation Results on the Intensity Distribution of an Object Plane Using Crossed and Non-Crossed Lamp Arrays Arranged in parallel Above and Below, March 1994, discloses heating an object a first set of Flashlights below the object to be heated in a first direction and a second amount of flashlights above the object to be heated to be arranged along a second direction, which is perpendicular to the first direction.

Further, in A.S.T. Elektronik GmbH, Technical Notice 14, SHS, simulation based equipment control in AST Super Heat Systems Part I, June 1992, a simulation of a temperature distribution in the heating process in a process heating chamber shown, with different types of factors influencing the temperature distribution are described.

From Camm et al., Engineering Ultra-Shallow Junctions Using fRTP ^™ , 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP 2002, pp. 5-10, 2002, it is known in the context of an RTP process in addition to a so-called spike heating for a very short period of time, in particular the period between one millisecond to five milliseconds, to activate a flashlamp by means of which additional heating energy is generated for heating an RTP-processed wafer.

From the WO 02/095804 A1 and the WO 01/31689 A1 For example, there is known a device for thermally treating substrates which has an upper bank of lamps arranged above the substrate and a lower bank of lamps arranged below the substrate, wherein the upper bank of lamps and the lower bank of lamps each comprise flashlights and / or point lamps can have.

The invention is based on the object, in particular by different process heating chamber-specific influencing factors resulting local temperature inhomogeneities in the context of a heat-up process to simple and inexpensive Way to compensate and yet to ensure sufficient temperature homogeneity.

The problem is solved by the process heating chamber with the features according to the independent claim.

Preferred embodiments of the invention will become apparent from the dependent claims.

A process heating chamber has a plurality of flashlights and a plurality of point lamps, wherein the flashlights and the spotlights are used for heating an object arranged in the process heating chamber. At least a portion of the flashlights and at least a portion of the point lamps are disposed on the same side within the process heating chamber relative to the article.

Illustratively, the invention can be seen in that in addition to the flashlamps for heating an object, a plurality of point lamps are provided, which are arranged and / or driven by a point lamp driving unit such that predetermined static or occurring within the heating process and measured Temperature inhomogeneities on and / or in the object, in particular on the main surfaces of the object, be compensated by means of controlled or controlled driving.

In particular, by providing both flashlights and point lamps in the process heating chamber on the one hand a very homogeneous irradiation of the wafer and thus a very homogeneous temperature distribution in the context of heating the object can be achieved and on the other hand interference, which for example by RTP process Heating chamber (RTP: Rapid Thermal Process) contained reflectors and / or the usually provided in such a process heating chamber quartz glass chamber caused simple and static (control) and / or dynamically (control) can be compensated.

In particular, by using both the flashlights and the point lamps, it may even be possible to dispense with rotation of the wafer. In this case, the corresponding wafer holding device is preferably arranged immovable, in particular unrotatable.

Thus, in the process heating chamber according to a first embodiment, the article is statically disposed within the process heating chamber. According to another embodiment of the invention, however, a relative movement between the lamps and the object is provided, according to a first variant by movement, preferably rotation of the object relative to the point lamps, in an alternative variant by movement in particular of the point lamps relative to the object, in particular by Rotation of the point lamps or the point lamps receiving point lamp holder.

The invention is particularly clear when using the heating process chamber in the context of heating processes in the context of the production of semiconductor wafers, d. H. In general, when used in the semiconductor industry, and in particular when used as part of a rapid heating process, especially for compensating for occurring temperature inhomogeneities in wafers ever larger diameter advantageously used to there the occurring temperature fluctuations according to the devices of the prior art, in other words, temperature inhomogeneities to significantly improve. Thus, in particular the sometimes very high demands on process stability (CPK) are achieved according to the invention.

Thus, in other words, one aspect of the invention can be seen in the use of flashlights and the use of point lamps. The flashlights provide vividly for a homogeneous irradiation of the article, smaller local temperature differences on the object surface can be compensated according to the invention by additional variations of the point lamps.

At least a portion of the flashlights, preferably all flashlights, and at least a portion of the point lamps, preferably all point lamps, are disposed within the process heating chamber above the article, i. E. H. in other words, over the main processing surface of the preferred sheet article, thus heating the main processing surface of the lamps.

At least a portion of the flashlights, preferably all flashlights, and at least a portion of the point lamps, preferably all of the point lamps, are disposed below the article within the process heating chamber according to another embodiment of the invention, i. H. in other words, below the rear side of the preferred flat object opposite the main processing surface, whereby the rear side of the lamps is heated.

In a further embodiment of the invention, point lamps and / or flashlights can be provided on both sides of the object.

At least a part of, preferably all flashlights are preferably configured as incandescent flashlights, in particular as halogen flashlights, particularly preferably as tungsten halogen flashlights.

At least a part of, preferably all flashlights can be designed arcuate or circular, which is particularly advantageous if in a flat object, in particular a wafer to be heated, the wafer or its holding device is rotated relative to the flashlights, so that the flashlights are designed according to the rotational movement.

According to another embodiment of the invention, it is provided that at least a portion of the point lamps, preferably all point lamps are configured as incandescent point lamps, in particular as halogen point lamps, particularly preferably as tungsten halogen point lamps.

Additionally or alternatively, at least a portion of the point lamps may be provided as arc point lamps, in particular as flash point lamps for generating arc flashes for heating the object accommodated in the process heating chamber.

Furthermore, according to another embodiment of the invention in the process heating chamber, a holding device for holding the object is provided, wherein the holding device is preferably adapted to hold a flat object.

In particular, due to the fact that disturbances of the temperature homogeneity in the process heating chamber can be caused by the holding device, the invention is very well suited by the additionally provided point lamps, since by means of these the disturbances can be at least partially compensated.

In this context, a flat article is to be understood as meaning an article whose lateral extent is substantially greater than its vertical extent, ie. H. the processing surface of the article is substantially greater than the thickness of the article, whereby the thickness of the article is substantially negligible in the context of the heating process.

An example of such a sheet-like object is to be seen in a printed circuit board whose contacts, for example by means of heating for soldering to be attached to the circuit board items, such as electronic components such as electrical resistors, capacitors, transistors, capacitors, coils, microprocessors, electronic memory, etc. to be heated, with the terminals of the electronic components being soldered to the corresponding circuit board terminals made of metal or other electrically conductive material, in particular using solder material (for example tin).

Another example of a sheet article is to be seen in a wafer to be heated, particularly a semiconductor wafer such as silicon, or a semiconductor composite such as gallium arsenide, indium phosphide, a ternary semiconductor composite, or a semiconductor quaternary composite.

Thus, the holding device may in particular be a printed circuit board holding device or a wafer holding device.

In particular, in the case where the holding device is a wafer holding device in the process heating chamber, it may internally or externally comprise a rotary drive device for rotationally driving the holding device and thus the article, in particular the wafer holding device.

If a relative movement is provided in the process heating chamber between the object arranged in the process heating chamber and in particular the point lamps, this can be done either by means of a rotatable, generally movable object holding device provided there, or by provision in an alternative embodiment a movable, in particular rotatable dot lamp holder for receiving and holding the point lamps.

In this way, a relative movement, in particular a rotational relative movement between the object, in particular the wafer, and the point lamps is achieved, whereby a further improvement of the achievable temperature homogeneity is achieved during the heating of the article.

According to another embodiment of the invention may be provided for driving the flashlights and / or point lamps, a lamp drive unit.

Thus, the lamp driving unit may include a lamp driving unit and a dot lamp driving unit.

The lamp drive unit is driven according to an embodiment of the invention using a previously determined temperature compensation table, in the previously determined, for example at one or more Calibration wafer (s) measured, local temperature fluctuations, in particular for a particular object, in particular a wafer for a particular type of wafer, depending on the particular substrate, the process technology used and / or the respective electronic circuit or the respective electronic chips, each made in the wafer are stored. In other words, this means that different compensation values are stored in the temperature compensation table, depending on whether, for example, a silicon substrate, a SOI substrate (Silicon On Insulator), a gallium arsenide substrate, an indium phosphide substrate, an aluminum substrate. Gallium arsenide substrate or other substrate of a III-V semiconductor material or a II-VI compound semiconductor material or a ternary or quaternary compound semiconductor material or depending on whether they are chips with logic circuits or chips with memories or depending on the selected process technology.

The temperature compensation table (s) is / are determined prior to the actual phase of operation in a calibration phase for the respective types of wafer, the respective technologies used and / or for each manufactured in different ways chips on one or more calibration wafers by means of appropriate temperature measurements, which ( r) calibration wafer is / are made in the same way as the later by means of the process heating chamber to be processed each wafer.

In an alternative embodiment, it is provided that at least one temperature detection unit, preferably in the form of a temperature sensor, for detecting the temperature at at least one position of the object, d. H. is provided in particular at a position of the circuit board or the wafer. Especially in the case of an arcuate realization of the flashlights, it is particularly preferred that a temperature sensor is provided on each of the flashlights, which measures the temperature along a "circular path" of a rotating wafer (or substrate) corresponding to a respective arcuate flashlight.

In principle, any desired number of sensors may be provided, which select selected point-like positions on the object surface, selected area areas on the object surface (a partial area or the entire area of the object surface detected with one or more sensors) or selected linear, in particular circular areas measure the surface of the object with respect to the prevailing temperatures.

Depending on the determined temperature distribution on the wafer, optionally using the measured temperatures of all provided temperature sensors, the point lamps are controlled to compensate for detected temperature inhomogeneities accordingly.

This is done by means of a corresponding computer program provided and stored in a control unit. The control program can be implemented in an alternative embodiment of the invention in hardware or in any combination between hardware and software.

In other words, this means that the lamp drive unit, i. H. In particular, the flashlight drive unit and the point lamp drive unit each control or regulate the flashlights or the point lamps, in particular according to the computer program.

The control unit may be implemented in a separate unit to the lamp drive unit, but may also be implemented in the lamp drive unit itself.

The process heating chamber may, in particular, have a space of light-transparent material accommodating the object, in particular a semiconductor wafer, in particular of quartz glass (also referred to as quartz chamber).

In particular when using a quartz chamber, the process heating chamber according to the invention is very advantageous, since by means of the point lamps disturbances of the temperature homogeneity, caused for example by the quartz chamber, can be compensated.

According to the invention, at least a portion of the flashlights and at least a portion of the point lamps are arranged in different planes parallel to each other and to the main processing plane of the planar object on the same side with respect to the object, wherein in particular the point lamps are arranged such that they produce a predetermined temperature profile when all the point lamps are fully activated.

The flashlights and the point lamps are preferably outside the space of light-transparent material, in particular in a quartz chamber outside this, arranged.

For example, at least a portion of the flashlights above, that is arranged above the object, and at least a portion of the point lamps over the part of the flashlights arranged. Between the part of the flashlights and the part of the point lamps is preferably a perforated mirror, in which holes preferably the point lamps are arranged, or arranged a semitransparent mirror.

A first quantity of the flashlights may be disposed over the article and a second quantity of the flashlights under the article such that the first quantity of flashlights and the second quantity of flashlights sandwich the article received in the process heating chamber and thus both from the main processing surface (ie, the front side processing surface) and the opposite rear side processing surface heat up, whereby a further improvement in the context of the heating process is achieved.

The process heating chamber is preferably a rapid heating process heating chamber, also referred to as an RTP heating chamber, alternatively or additionally as a physical deposition process heating chamber, in particular as a sputtering process heating chamber and alternatively or additionally as a chemical deposition chamber. Process heating chamber in which a chemical vapor deposition (CVD) deposition process is performed to deposit material on its main processing surface.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 a schematic representation of a process heating chamber in plan view according to an embodiment of the invention;

2 a schematic representation of a process heating chamber in plan view according to the prior art;

3 a schematic representation of another process heating chamber in plan view according to the prior art;

4 a side perspective view of a process heating chamber according to the embodiment of the invention;

5 an illustration of a wafer holding device according to an embodiment of the invention;

6 a schematic diagram of the pyrometric temperature measurement according to an embodiment of the invention;

7 a representation of an arrangement of point lamps and flashlights in a process heating chamber according to the embodiment of the invention;

8th a schematic representation of a process heating chamber in plan view according to a second embodiment of the invention;

9 a schematic representation of a process heating chamber in plan view according to a third embodiment of the invention.

4 shows an RTP process heating chamber 400 according to the embodiments of the invention.

The RTP process heating chamber 400 has a housing 401 with a lower housing part 402 and an upper housing part 403 on, wherein in the lower housing part 402 a first variety 404 are provided parallel to each other along a first direction extending flashlights.

Furthermore, in the lower housing part 402 one in 5 Wafer holding device shown in detail 405 intended.

The RTP process heating chamber 400 further comprises a quartz chamber in which the wafer holding device 405 is included.

In the upper housing part 403 are a second variety 406 arranged by flashlights, which along the first direction, alternatively along a direction to the first direction, preferably arranged perpendicularly second direction, are mounted.

The flashlights 404 . 406 are halogen flashlights, preferably tungsten halogen flashlights.

Further, the RTP process heating chamber has 400 over the flashlights 406 not shown dot lamps and a lamp drive unit for driving the lamps.

The lamp drive unit according to these exemplary embodiments of the invention has a flashlamp drive unit (not shown) and a point lamp drive unit (not shown) for respectively driving the flashlights or point lamps.

Further, in the RTP process heating chamber 400 one by means of the flashlights 404 . 406 and the point lamps to be heated wafer 407 with a plurality of electronic components, preferably with a plurality of electronic chips (for example, memory chips, logic chips, microprocessor chips) in the wafer holder 405 preferably a silicon wafer, a silicon on insulator wafer (SOI wafer), a gallium arsenide wafer, an indium phosphide wafer, etc.

5 shows the static wafer holder 405 according to a first embodiment of the invention in detail.

The wafer holder 405 has three support point support elements 501 . 502 and 503 in the form of pins with a respective carrier tip, for receiving the wafer 407 (in 5 shown in section). The wafer 407 is completely surrounded by a temperature compensation ring 504 (also referred to as slip guard ring). Furthermore, in 5 a gas inlet 505 as a hole through the frame 506 the wafer holding device 405 shown.

On the gas inlet 505 opposite side is in built into the process heating chamber wafer holding device 405 provided the process chamber door.

1 shows in a schematic diagram 100 in plan view, the process heating chamber 400 according to the first embodiment of the invention, in which the wafer-holding device is static as well as the point lamps 101 receiving dot lamp holding device, so that overall results in a static device in which no relative movement between the wafer 407 and the point lamps 101 is provided.

As in the schematic diagram 100 are shown above the wafer 407 , as well as under the wafer 407 a variety 406 of flashlights along the first direction to each other in parallel spaced apart. About the flashlights 406 are in a given grid, preferably in an octagonal grid, alternatively in a hexagonal grid or in a square grid or in a triangular grid, alternatively in a random grid, a plurality of point lamps 101 provided and connected to the dot lamp driving unit (not shown). The point lamps 101 are arranged according to this embodiment of the invention as tungsten-halogen point lamps.

According to this embodiment of the invention, it is provided that possible temperature inhomogeneities in a calibration phase for one or more static calibration wafers are measured and the respective calibration values, in particular the temperature distribution and the associated temperature inhomogeneities on the wafer surface (in particular on the front side and / or or on the back side of the wafer) is stored in a memory of the lamp drive unit as a drive correction table using which static compensation of the temperature inhomogeneities is performed in the context of a controlled drive of the spot lamps to compensate for the temperature inhomogeneities.

For this purpose, a corresponding control program is stored in the lamp drive unit, in particular in the point lamp drive unit, which is executed by the lamp drive unit, in particular as a microprocessor.

6 shows an example of such a temperature measurement in the context of an RTP process.

As in the arrangement 600 of the 6 is shown below the quartz chamber 601 which are around the wafer 407 is formed around in the process heating chamber, a quartz chamber cutout as a window area 602 provided, which of the wafer 407 outgoing heat radiation through the window area 602 lets through. In the 6 by means of arrows 603 symbolized heat radiation is through a shutter 604 to a pyrometer 605 guided, which detects the heat radiation and thus measures the temperature.

6 also shows the underneath the wafer 407 arranged flashlights 404 ,

7 shows in a schematic diagram 700 the RTP process chamber 400 according to the first embodiment of the invention in cross-sectional view.

As 7 it can be seen, is the wafer 407 in a quartz chamber 601 added. Below the wafer and below the bottom of the quartz chamber 601 is a first variety 404 arranged by flashlights for heating the wafer 407 , The below the wafer 407 arranged flashlights 404 are by means of a on the lower housing part 402 attached flashlight fixtures attached.

The flashlights of the first variety 404 of flashlights are arranged at a distance from each other between 1 cm to 5 cm parallel to each other. Above the wafer 407 and above the ceiling of the quartz chamber 601 is a second variety 406 provided by flashlights, which also means not illustrated flashlight holding devices on the upper housing part 403 the RTP process heating chamber 400 are attached.

According to this embodiment of the invention, the flashlights of the second plurality 406 of flashlights also to each other at a distance of between 1 cm to 5 cm arranged parallel to each other, the upper flashlights 406 opposite the lower flashlights 404 can be offset. In an alternative embodiment, it is provided that the flashlights are arranged in a direction perpendicular to the first direction second direction. All flashlights 404 . 406 are each substantially parallel to the processing surface of the wafer 407 arranged.

About the second variety 406 from flashlights is a mirror 701 or a half-transparent mirror 701 intended. In the case of a semipermeable mirror 701 is disposed above the second plurality of flashlights, holes are not necessarily provided in the frame. In the event that a full reflector, so a mirror 701 , over the second variety 406 are arranged by flashlights, this has a variety of holes 702 on, in which preferably the point lamps 101 are arranged.

Above the mirror 701 or the semipermeable mirror 701 is a variety of point lamps 101 intended.

The point lamps 101 preferably have an active area of about 5 mm × 2 mm and are arranged parallel to each other at a distance of between 1 cm to 5 cm.

The point lamps 101 as well as the flashlights 404 . 406 both serve to heat the wafer 407 , where the flashlights clearly a homogeneous temperature load on the wafer 407 ensure and the point lamps 101 to compensate for local temperature inhomogeneities.

8th shows a schematic diagram 800 an RTP process heating chamber according to a second embodiment of the invention.

The second embodiment of the invention corresponds to the first embodiment of the invention, with the difference that the non-illustrated wafer holding device according to the second embodiment of the invention is set up such that the wafer received in the wafer holding device 407 in the direction of in 8th illustrated arrow 801 or can rotate in the opposite direction.

In this way, a relative movement between the wafer 407 and the point lamps 101 generated, which in particular disturbing effects, which are generated by the wafer-holding device, can be compensated even better.

According to the second embodiment of the invention and according to the third embodiment of the invention described below, it is further provided that in each case a temperature sensor is provided on the lamps, preferably on the flashlights, which continuously during the rotation of the wafer 407 measures the temperature at the measuring points of the wafer and passes this to a control device, which determines the temperature inhomogeneities determined by correspondingly compensating controls by means of a regulation of the point lamps 101 compensated.

9 shows a schematic diagram of an RTP process heating chamber 900 according to a third embodiment of the invention, wherein as in the second embodiment of the invention, the wafer holding device is adapted to receive the wafer received in the wafer holding device 407 along the by means of the arrow 801 rotated direction or in the opposite direction.

In this way, in turn, a relative movement between the wafer 407 and the point lamps and the flashlights 901 guaranteed.

However, according to the third embodiment of the invention, the flashlights are arcuate or circular flashlights 901 configured, to each of which a separate sensor for determining the temperature distribution along a circular path of the rotating wafer 407 is provided, whereby the calibration and controllability for temperature compensation is further simplified and improved.

In an alternative embodiment of the invention, a multi-chamber heating process chamber arrangement with a plurality of heating process chambers, as described above, is provided, so that a plurality or plurality of wafers can be simultaneously processed by the process Heizkammeranordnung temperature.

In a further alternative embodiment of the invention, it is provided that in the process heating chamber itself a plurality of wafers, generally of objects one above the other, each preferably in their own quartz chambers, each with interposed rod lamps and optionally arranged therebetween point lamps is provided.

LIST OF REFERENCE NUMBERS

100

Schematic representation of process heating chamber in plan view

101

spot lamp

200

Schematic representation of process heating chamber in plan view

201

wafer

202

penlight

300

Schematic representation of process heating chamber in plan view

301

wafer

302

spot lamp

400

Process-heating chamber

401

Housing Process heating chamber

402

Lower housing Process heating chamber

403

Upper housing Process heating chamber

404

penlight

405

Wafer stage

406

penlight

407

wafer

501

Fulcrum support element

502

Fulcrum support element

503

Fulcrum support element

504

Temperature compensation ring

505

gas inlet

506

Frame wafer holder

600

Schematic representation of temperature measurement

601

quartz chamber

602

Window area quartz chamber

603

thermal radiation

604

cover

605

pyrometer

700

Schematic representation of process heating chamber in cross-sectional view

701

Mirror / semi-transparent mirror

702

hole

800

Schematic representation of process heating chamber in plan view

801

arrow

900

Schematic representation of process heating chamber in plan view

901

arcuate flashlight

Claims (22)

Process heating chamber ( 400 ) with a variety of flashlights ( 404 . 406 ) and a plurality of point lamps ( 101 ) for heating a in the process heating chamber ( 400 ) arranged article ( 407 ), whereby at least part of the flashlights ( 404 . 406 ) in a first level and at least a portion of the point lamps ( 101 ) in a second level on the same side within the process heating chamber ( 400 ) related to the subject matter ( 407 ), wherein the first plane and the second plane are parallel to each other and parallel to the processing surface of the article ( 407 ) are arranged. Process heating chamber ( 400 ) according to claim 1, wherein at least part of the flashlights ( 404 . 406 ) and at least a portion of the point lamps ( 101 ) within the process heating chamber ( 400 ) above the object ( 407 ) are arranged. Process heating chamber ( 400 ) according to claim 1 or 2, wherein at least part of the flashlights ( 404 . 406 ) and at least a portion of the point lamps ( 101 ) within the process heating chamber ( 400 ) under the object ( 407 ) are arranged. Process heating chamber ( 400 ) according to one of claims 1 to 3, wherein at least part of the flashlights ( 404 . 406 ) is arranged as incandescent flashlights, in particular as halogen flashlights. Process heating chamber ( 400 ) according to claim 4, wherein at least part of the flashlights ( 404 . 406 ) is designed arcuate. Process heating chamber ( 400 ) according to one of claims 1 to 5, wherein at least a part of the point lamps ( 101 ) is arranged as incandescent point lamps, in particular as halogen point lamps. Process heating chamber ( 400 ) according to one of claims 1 to 6, wherein at least a part of the point lamps ( 101 ) is set up as arc point lamps. Process heating chamber ( 400 ) according to one of claims 1 to 7, with a holding device for holding the object ( 407 ). Process heating chamber ( 400 ) according to claim 8, wherein the holding device for holding a flat object ( 407 ) is set up. Process heating chamber ( 400 ) according to claim 9, wherein the holding device comprises a wafer holding device ( 405 ) or a circuit board holding device. Process heating chamber ( 400 ) according to claim 9 or 10, comprising a rotary drive device for rotationally driving the holding device. Process heating chamber ( 400 ) according to one of claims 1 to 11, with a lamp drive unit for driving the flashlights ( 404 . 406 ) and / or point lamps ( 101 ). Process heating chamber ( 400 ) according to one of claims 1 to 12, with at least one temperature detection unit for detecting the temperature at at least one position of the object ( 407 ). Process heating chamber ( 400 ) according to claim 12 or 13, wherein the lamp drive unit is adapted to the controlled and / or regulated driving of the flashlights ( 404 . 406 ) and / or point lamps ( 101 ). Process heating chamber ( 400 ) according to claim 14, wherein the controlled and / or controlled driving takes place in accordance with a stored predetermined drive correction table. Process heating chamber ( 400 ) according to one of claims 1 to 15, with a space of light-transparent material, in particular quartz glass, in which space the object ( 407 ) is recorded. Process heating chamber ( 400 ) according to claim 16, wherein the flashlights ( 404 . 406 ) and the point lamps ( 101 ) are arranged outside the space of light-transparent material. Process heating chamber ( 400 ) according to one of claims 1, 2, 4 to 17, • in which at least part of the flashlights ( 404 . 406 ) above the object ( 407 ), and • at least part of the point lamps ( 101 ) above the part of the flashlights ( 404 . 406 ) is arranged. Process heating chamber ( 400 ) according to one of claims 1, 3 to 17, • in which at least part of the flashlights ( 404 . 406 ) under the object ( 407 ), and • at least part of the point lamps ( 101 ) under the part of the flashlights ( 404 . 406 ) is arranged. Process heating chamber ( 400 ) according to one of claims 1 to 19, in which between the part of the flashlights ( 404 . 406 ) and the part of the point lamps ( 101 ) a mirror ( 701 ) with holes ( 702 ) or a semitransparent mirror is arranged. Process heating chamber ( 400 ) according to one of claims 1 to 20, • in which a first quantity of the flashlights ( 404 . 406 ) above the object ( 407 ) and in which a second quantity of the flashlights ( 404 . 406 ) under the object ( 407 ) is arranged. Use of a process heating chamber ( 400 ) according to one of claims 1 to 21 as a rapid heating process heating chamber; As a physical deposition process heating chamber, in particular as a sputter deposition process heating chamber; or • as a chemical deposition process heating chamber.

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