DE102004019263B4 - Apparatus for producing near-pure hydrogen by reforming and method of manufacturing the apparatus - Google Patents

Abstract

Device for producing virtually pure hydrogen by reforming feedstocks which comprise at least one starting material comprising carbon and hydrogen and water, wherein the reforming is followed by at least one hydrogen-selectively permeable hydrogen separation membrane in a region for reacting the feedstocks, characterized in that the region for the implementation of the starting materials (E) and the hydrogen separation membrane (3) in a component (device 1, 1 ', 1' ') are integrated, and that the carrier material consists essentially of microstructured, monocrystalline silicon.

Description

introduction

The The invention relates to a device for producing almost pure Hydrogen by reforming feedstocks according to the preamble of claim 1. In addition The invention relates to a method for producing a microstructured Silicon component for the production of nearly pure hydrogen according to the The preamble of claim 12 closer defined type. The invention can be used in a fuel cell system used as intended using the above device be and in particular by the use of the silicon substrate for the Use in compact miniature fuel cells (BZ) in the power class up to 50 W (consumer electronics, notebook, PDA, etc.) up to BZ systems as on-board power supply in mobile systems (eg auxiliary power unit (APU) in motor vehicles).

Out The general state of the art are reformers for the production of hydrogen or hydrogen-containing gas from gaseous or liquid hydrocarbons or hydrocarbon derivatives, for example gasoline, diesel, Methanol etc. known. Usually finds the reforming in the presence of water and / or oxygen instead of. The so by means of partial oxidation and / or steam reforming contains generated reformate a large share to hydrogen, which over optionally downstream Wassergasshiftreaktoren be further increased can.

Around the hydrogen-containing gas, for example, as an anode-side equipment to be able to use in a fuel cell are usually still cleaning equipment, such as B. selective oxidation states or for hydrogen selectively permeable membranes for separating almost pure hydrogen from the reformate, present.

As an example of such a device for generating hydrogen is here by the DE 197 55 815 C2 mentioned gas generating device with downstream hydrogen separation membranes called.

Since fuel cell systems are becoming smaller and more powerful, there is above all in the field of auxiliary power generators, so-called APUs (auxiliary power unit), in the field of means of transport, such. As motor vehicles, and in mobile electronic devices, such as notebook computers, etc., a high demand for the smallest possible and lightweight components of high performance. Those of the general state of the art and exemplified DE 197 55 815 C2 known gas generating systems with their numerous components can not meet this need.

outgoing It is the object of the present invention to provide a Apparatus according to the preamble of claim 1, a method of manufacture such a device for to create the use in fuel cell systems such that the production of hydrogen with high efficiency at minimum Need for space is made possible.

description

According to the invention this Task by the device with the in the characterizing part of claim 1 mentioned features solved. By integrating the area for the implementation of the feedstock, in which therefore at least the reforming and possibly a Water gas lift reaction expires, and the hydrogen separation membrane in a component results a considerable advantage in terms of the required installation space and in terms of the number of required Components. Through the use of micro-structured silicon as a carrier material is Furthermore economical production and perfect structuring this device ensures in addition in a wide size range can be produced and be both compact Miniature BZ as well for BZ systems with performance classes up to a few kW. The supply of nearly pure hydrogen can thus be done for the first time by essentially a single component.

According to one very advantageous development of the invention, it is provided that the area of implementation of the feedstocks as a porous carrier material for the Hydrogen separation membrane is formed. The carrier material can thus serve as mechanical support for the hydrogen separation membrane serve. The thinner, and thus also mechanically unstable, namely a hydrogen separation membrane, z. B. of palladium executed The better the permeation rate for hydrogen. The porous and characterized easily by the generated reformate to be flowed through carrier material allows because of its stability as mechanical support the thin layer suitable as a hydrogen separation membrane a very thin one and thus highly effective hydrogen separation membrane.

In addition, the carrier material has a very large surface area due to its porosity. Since the actual conversion of the starting materials takes place in the region of the carrier material, a very large surface which can be coated with catalytically active material can be made available here, which in turn improves the conversion and increases the hydrogen yield per unit volume. In a further, particularly advantageous embodiment of the invention, it is proposed that the region of the reaction of the starting materials has a plurality of subregions connected in succession in the flow direction, which are each in contact with a part of the hydrogen separation membrane.

In order to can be achieved that generated in each of the sections Hydrogen immediately after its generation by the hydrogen separation membrane is deducted. An otherwise usual Shifting of the reaction equilibrium to the educt side can thus be avoided. This results in the particular advantage that the reaction proceeds comparably well in all subsections because an increase the hydrogen concentration in the flow direction and thus a Displacement of the reaction equilibrium to the disadvantage of the desired Reaction is avoided. The hydrogen yield per unit volume rises above that State of the art. A method for producing the device according to the invention is characterized by the features in the characterizing part of claim 12 specified.

By the application of the suitable as a hydrogen separation membrane Layer, wherein between this and the substrate optionally one or several more layers as a primer and / or to compensate of different thermal expansion coefficients available could be, and the subsequent one etching through of the substrate up to that suitable as a hydrogen separation membrane Layer, z. As palladium, the membrane, together with its mechanical, as a region for the implementation of the feedstock serving porous support material be made quickly and easily. The manufacturing method according to the invention allows it, even with the smallest dimensions, for example, at typical structure lengths of less than 200 μm, the highly efficient device over, even in the context of a series production easily processes to be handled quickly and easily.

According to the invention as Carrier material or used as a substrate monocrystalline silicon. By the well-known Micro-structuring advantage of silicon over conventional metallic structures let yourself a significant increase in the compactness and efficiency of miniaturized gas generators cause. The production and structuring of such silicon is with the usual Means of micro and nano technology particularly light and in especially small dimensions possible.

Of Furthermore, silicon has the advantage of very good heat conduction on, allowing thermal energy between each area can be easily routed and exchanged. Exothermic processes can do so due to thermal balancing effects between the individual Areas of the substrate endothermic processes supply energy during the implementation of the input materials. Also from a usual at least when used in fuel cell systems Combustion or catalytic combustion of residual gas or exhaust gases derived thermal energy can thus independently to those they need Processes are conducted.

Besides as well still the heat stability and durability of silicon towards temperature cycles, in particular in the case of the preferred use in auxiliary power generators or Power supply device for mobile electrical apparatus mostly discontinuously operated devices, a significant advantage.

In a cheap one Embodiment of the invention, the etching of the structures in the Kind of that first by means of a photolithographic process defined and then by etching processes transferred to the substrate become. The well-known, not only in the structuring of Silicon usual and reliable technique to be controlled, such. As plasma etching or anodic etching, discloses a simple and efficient production of predetermined Structures. It allows a very free, yet easy to be produced design of the structures.

A extremely advantageous development of the invention provides that on the side of the structures in an edge region of the substrate By means of a photolithographic process adjustment structures defined and by etching transferred to the substrate become.

The Alignment structures, which are also referred to as alignment structures allow a simple and efficient assembly of the individual substrates to the device. The adjustment structures are while outside of the area containing the active structures. The Substrates thus differ only in the Justierstrukturen and are or can otherwise be identical. In the sense of an efficient and cost-effective Manufacturing would So it is advisable to manufacture the substrates identically and the Adjustment structures in one independently to define and implement the process running from the remaining production.

When mounting two substrates in each case, the alignment structures can mesh with one another in such a way that the arrangement of the substrates displaced by half a structural length results automatically. The adjustment structures simplify the process Sammensetzen the substrates so clearly. In addition, the connection of the individual substrates, which will usually be formed gas-tight, at least partially carried out in the field of Justierstrukturen, either by a simple assembly of the Justierstrukturen so that the surfaces in the region of Justierstrukturen abut each other, or a conventional Waferbonden in this area

The Application of this invention is to a fuel cell system comprising at least one fuel cell and a device to produce almost pure hydrogen by reforming at least a carbon and hydrogen-containing starting material and Water, wherein the reforming at least one hydrogen-selectively permeable hydrogen separation membrane is downstream. Said device is according to the invention trained and / or produced by a method according to the invention. Due to the already explained in detail at the outset advantages of the device according to the invention as well as their manufacturing process and the very compact and efficient Construction results in the advantages for the fuel cell system analog.

A Particularly advantageous use is such a fuel cell system as an auxiliary energy generator in a means of transport to water, too Land or in the air or as an electric power generator in mobile electrical apparatus.

at These preferred uses are the particular advantages in terms of extremely compact design and high conversion efficiency ideal use. Further advantageous embodiments of the invention arise from the remaining subclaims and from the following closer to the drawings illustrated embodiment.

there demonstrate

1 a schematic representation of a possible embodiment of the device according to the invention.

2 a schematic representation of an alternative embodiment of the device according to the invention;

3 a schematic representation of a first manufacturing step of the device according to the invention according to 2 ;

4 a schematic representation of a second manufacturing step of the device according to the invention according to 2 ;

5 a schematic representation of a third manufacturing step of the device according to the invention according to 2 ;

6 a schematic representation of a fourth manufacturing step of the device according to the invention according to 2 ;

7 a schematic representation of a fifth manufacturing step of the device according to the invention according to 2 and

8th a schematic representation of the device according to the invention of several individual devices.

The following embodiment describes the manufacture or the construction of a device 1 according to the invention. By way of example, hydrogen production for a fuel cell is always assumed without the invention being understood as being restricted thereto.

Fuel cell systems and in particular so-called micro fuel cell systems increasingly for portable high-tech electronic terminals, such as notebook computers, used. For all types of means of transport on land, in the water and in the air, here, however, especially for Motor vehicles, fuel cell technology is not only used as an environmentally friendly drive technology, but also in the form of auxiliary energy generators as stand and support energy supply for air conditioning, Radio, navigation, communication equipment and the like. Typically, such auxiliary power generators (APU / auxiliary power unit) an electrical power of 3 to 10 kW.

Around the fuel cells with easy-to-use and almost everywhere available fuel To operate high energy density is generally on liquid, Carbon and hydrogen-containing fuels, such. Gasoline, Diesel, methanol or the like, resorted.

Around from it the for the operation of the fuel cell or a fuel cell stack, z. B. based on PEM fuel cell necessary hydrogen To obtain a reforming of the fuel is necessary the long-chain hydrocarbons in hydrogen and carbon dioxide transforms.

In general, the Einsatzstof fe, which at least water and the fuel, and optionally also oxygen in the form of z. For example, air comprising substantially converted to hydrogen, carbon dioxide and carbon monoxide. The process of actual reforming proceeds as a pure endothermic steam reforming (equation 1b) or as a combination of endothermic steam reforming (equation 1b) and exothermic partial oxidation (equation 1a) as so-called autothermal reforming. C _n H _m + n / 2O ₂ ⇒ nCO + m / 2H ₂ ΔH <0 (1a) C _n H _m , + H ₂ O ⇒ nCO + (m / 2 + n) H ₂ ΔH> 0 (1b)

Mostly, but not necessarily, the reforming is followed by a water gas shift reaction (Equation 2) which reduces the CO fraction and further increases the hydrogen content in the gas produced. CO + H ₂ O ⇔ H ₂ + CO ₂ ΔH <0 (2)

Around the hydrogen-containing gas as anode-side equipment in to be able to use the fuel cell, are still fine gas cleaning equipment necessary. A particularly effective and cheap way of producing Reformatgasstrom almost pure hydrogen separate, is in for hydrogen selectively permeable Membranes, so-called hydrogen separation membranes, seen. Such membranes have long been known per se, with palladium (Pd) one of the preferred materials for the preparation of such hydrogen separation membranes is.

to support the implementation of carbon and hydrogen starting materials and water and / or air in hydrogen, as well as to carry out the Water gas shift reactions usually become Reactors are used, which in the region of its inner surface at least a catalytically active material, such as. As Pt, Pd, Ni, Au, have.

decisive Criteria for the degree of conversion are the surface / volume ratio of Reactor, the pressure difference over the reactor space and the heat exchange at the interface to the starting materials.

In 1 is such a device 1 indicated in principle. Central is an area for the conversion of the starting materials E recognizable, which as a porous carrier material 2 for the hydrogen separation membrane 3 , which should consist of a thin palladium layer here, serves. In the area of the carrier material 2 flow through an inlet opening 4 the optionally preconditioned, that is mixed, heated and / or vaporized starting materials E, a. For autothermal reforming, these would include, for example, water, gasoline and air. Favored by the at least one, in the region of the porous support material 2 catalytically active material is then the reaction of the starting materials E in the region of the carrier material 2 , The resulting hydrogen H ₂ can pass through the hydrogen separation membrane 3 subtracted from. The remaining residual gas or the retentate R, which is essentially carbon monoxide, carbon dioxide and residues of the hydrocarbon, can via an outlet opening 5 escape. As usual in fuel cell systems, the reformate or retentate R may be supplied to, for example, catalytic combustion or the like.

By that of the hydrogen separation membrane 3 Surrounded substrate 2 arises like this, with the exception of the openings 4 . 5 , gas-tight device 1 which only hydrogen through the hydrogen separation membrane 3 escape.

The requirements mentioned at the beginning of the device 1 may be due to the use of microstructured silicon as the carrier material 2 will be realized. By using micro- and / or nanostructuring techniques, pores with typical aspect ratios A> 5-10, for example with a diameter of 20-50 μm and a depth of 200-300 μm, can easily be produced by methods suitable for mass production. Suitable dry etching techniques or the so-called anodic or electrochemical etching method (deep anodic etching, DAE) are suitable here. With the aid of the DAE process of silicon, the porosity of the carrier material 2 be varied over a wide range and therefore a large reaction surface for the catalytic conversion of the starting materials are created according to the above reaction equations. In addition, the thermal stability and resistance of the material used silicon to temperature cycles also plays an important role.

In the principle indicated device 1 according to 1 Thus, it can be spatially separated from one another, for example in two subregions not shown here, in succession in the flow direction of the starting materials / reformate (see FIG 2 ), both the reforming, and the Wassergasshiftreaktion run, wherein the resulting hydrogen as the permeate through the hydrogen separation membrane 3 is continuously withdrawn through. For the preparation of the structures in the carrier material 2 is in accordance with the design 1 Self-organized etching by means of anodic etching (deep anodic etching, DAE) conceivable.

For the following in 2 described In the current embodiment, this technique does not yet offer sufficient potential, since there are two very well-defined structures 6 on two different modules 7 intertwined as the production of the device 1' according to 2 will be described in more detail later, will be discussed here only at first their operation.

In the device shown in principle in a longitudinal section 1' according to 2 it is like the device 1 according to 1 to a combined, integrated in a component hydrogen separation and reforming reactor. Essentially, this consists of two comparably formed, mutually aligned, porous and with a catalytically active material 8th provided silicon structures, which are offset by half a structural length x offset and joined together. The starting materials E pass through the inlet openings 4 into the device 1' and flow sequentially through the structures 6 , For example, pores with a depth of about 300 microns and a diameter of about 50 to 100 microns, formed portions 9a to 9g , where from the subarea 9g the residual gas or retentate R the region of the outlet opening 5 is supplied.

The subareas 9a to 9g be designed by the manufacturing method described later, so that in the device 1' a meandering flow through the individual sections 9a to 9g or the structures 6 established. Thus, in addition to good space utilization, the longest possible contact of the starting materials E with that on the surfaces of the structures 6 located catalytically active material 8th reached.

In each one of the subareas 9a to 9g is generated from the feedstocks E, inter alia, hydrogen H ₂ . This hydrogen occurs in each of the subregions 9a to 9g or in each one of the structures 6 through this in the area of a pore floor 10 of which in 2 only one example is provided with a reference numeral, final hydrogen separation membrane 3 out. In addition to an elegant spatial integration of two different functions, namely the implementation of the starting materials E and the hydrogen separation, in a component which consists essentially of at least a pair of identically formed, mirror image and offset by half the length of the structure x arranged modules 7 from the carrier material 2 is made up by the at each pore bottom 10 onset of permeation of the hydrogen shift the reaction equilibrium of the reaction on the product side.

As a result, this equilibrium is changed quasi-continuously and the reaction is thus maintained at a high conversion rate or in each of the subregions 9a to 9g or in each of the structures 6 every time started again. Due to the constantly escaping permeate, the reaction is much better maintained than in conventional reactors with downstream in a separate component hydrogen separation membranes. The device 1 respectively. 1' Thus, with the same performance, it is again possible to build significantly smaller than a corresponding design according to the prior art.

In the device 1' according to 2 it would also be possible, one or some of the sub-areas, eg. B. 9f and 9g to operate as Wassergasshiftstufen, while in the other of the sections, z. B. 9a to 9e , the implementation of the starting materials E, for example, runs as autothermal reforming. The different heat of reaction could then by thermal conduction in the carrier material 2 be balanced, so that the total thermal energy demand of the device 1' is optimized.

Based on 3 to 7 will now be described in detail by way of example of a possible manufacturing method for the device 1' To be received. The figures represent the production process schematically and not to scale again. Sizes are to be understood as pure examples. The device 1' may, but need not, be designed in the dimensions described.

Starting material for the production of the device 1' is a substrate 11 a microstructuring material. In the representation of the first method step according to 3 this is a monocrystalline silicon wafer with a thickness of 300 microns. On this substrate 11 first becomes the hydrogen separation membrane 3 applied. This can be done for example by sputtering. In 3 are next to the hydrogen separation membrane 3 , which here consists of a palladium layer or palladium-copper layer, two more layers 12 . 13 recognizable. In these layers 12 . 13 is it starting from the substrate 11 around a shift 12 made of silicon nitride (SiN _x ) as well as a very thin metal layer 13 For example, made of aluminum or nickel. The layers 12 . 13 serve as adhesion promoters and to compensate for stresses due to the different thermal expansion coefficients of substrate 11 and hydrogen separation membrane 3 may occur. They are also ideally sputtered or can in the case of the metal layer 13 also be evaporated.

In the next process step, which by 4 is illustrated on the applied to the hydrogen separation membrane 3 opposite side of the substrate 11 , by means of photolithographic methods, the later structure 6 of the substrate 11 Are defined. In 4 is photoresist 14 Recognizable at the places where there is no structure in the substrate 11 etched or through the substrate 11 should be etched through. In principle, the structure 6 even be designed almost arbitrarily. However, particularly suitable are pores, which are designed so in rows or at least open on one side, that in the later assembly of two modules 7 the subareas 9a to 9g arise so that the meandering flow described above can be achieved.

After the structure 6 was defined in the photoprocess, what here by the photoresist 14 is recognizable, this is by means of plasma etching or by anodic etching (DAE) in the substrate 11 transferred or etched. As in 5 it can be seen, the etching is up to the metal layer 13 respectively. The substrate 11 made of silicon and the layer 12 made of silicon nitride is thus completely etched through. The metal layer 13 is indeed on the hydrogen separation membrane 3 However, this is so thin, typically between 10 and 15 microns, that through the metal layer 13 the permeation through the hydrogen separation membrane 3 not or only minimally affected. As part of the manufacture of the device 1' According to the embodiment shown here, typical structures arise 6 or pores having a pore width of 50-100 microns, a partition wall thickness of about 20 microns and a pore depth corresponding to the substrate thickness, in this case 300 microns. For example, four of the 30 to 40 mm modules can be used 7 Arrange on a 4 '' silicon wafer (~ 4 inches, ∅ 100 mm).

After removing the photoresist 14 is then going through the structures 6 greatly enlarged surface of the substrate 2 a suitable catalytically active material 8th , z. As Pt, Pd, Ni, Au, deposited by sputtering, electrochemical deposition or vapor deposition, as shown in 6 is shown. Since this material is applied in a very small layer thickness, there is no impairment of the permeation in the area of the pore floors 10 Coated hydrogen separation membrane 3 , especially since the materials used, for. B. Pd, often for hydrogen (selectively) are permeable.

Two of the resulting modules 7 can be as a module pair 16 to the device 1' put together by using the the structure 6 pages facing each other and connected. It should be noted that the two modules 7 should be arranged offset by half the length of the structure x, in order to achieve the meandering flow.

To facilitate this assembly now, in a region of the substrate 11 outside the structures 6 adjustment structures 15 introduced as you in 7 can be seen. These also in 2 recognizable adjustment structures 15 , which are also referred to as alignment structures, are the only area in which the individual modules 7 differ from each other. The modules 7 Thus, they can be produced identically up to this production step, and thus manufactured in a correspondingly simple and cost-effective manner.

The adjustment structures 15 are also defined by photolithographic methods and into the substrate 11 etched The alignment structures 15 consist for example of a mesa 15a in the lower module 7 and a corresponding precisely structured, complementary opening 15b in the opposite module 7 like this in 2 becomes recognizable. They are designed so that in a flip-chip analog bonding of the modules 7 independently the transfer of structures 6 set by half the structure length x. As with flip-chip bonding, the oppositely oriented structures become common 6 by means of the adjusting devices 15 as a structural aid fit exactly, here offset by x / 2, put together.

This assembly can be accomplished in a purely mechanical manner, or preferably by the so-called wafer bonding technique, to ensure a gas-tight completion of the so nested modules. In addition to its function as a positioning aid, the gas-tight connection of the modules can also be achieved in the area of the alignment structures 7 respectively. With appropriately designed adjustment structures 15 If necessary, this gas-tight connection can be self-evident by "blasting" the precisely fitting surfaces together. Otherwise, this can be achieved by conventional, known from silicon microelectronics, metallic bonding method or by selective Waferbonden.

After the introduction of the inlet openings 4 for the starting materials E and the outlet opening 5 for the retentate R, a pair of modules that are dense for gases with the exception of hydrogen is formed 16 as it is in 2 is shown.

As in 8th can show several of these module pairs 16 to a device 1'' to produce hydrogen. To the 8th was to make it clearer and better to be able to represent the flow guidance on the description of the details of the modules 7 However, this is omitted on the basis of the analog modules to be understood 2 , The connection takes place in an ideal manner via an intermediate wafer 17 made of silicon, which has a corresponding opening 18 for removing the permeate. Through the intermediate wafer 17 Due to the known good thermal conductivity of the silicon, not only the mechanical connection between the module pairs 16 created, but also a heat conduction from the one module pair 16 to the other module pair 16 allows. The in the device 1'' contained or generated and / or required thermal energy is thus between the module pairs 16 and their subareas 9a to 9g directed and exchanged. This is particularly useful if, for example, in the one of the module pairs 16 the endothermic steam reforming and in the other of the module pairs 16 drain the exothermic Wassergasshiftreaktion. Through the thermal bridge by means of the intermediate wafer 17 can in the one module pair 16 resulting process heat the other module pair 16 heat.

As in construction according to 8th It can be seen, several of the module pairs 16 in the component fluidly in series or in parallel, which is not shown here, are interconnected, the structures 6 (please refer 2 ) or the structured carrier material 2 ( 1 ) of the modules 7 and the module pairs 16 ( 8th ) are in heat-conducting contact with each other. In addition to the energetic advantages, if at least one of the module pairs 16 operated as a water gas shift stage, there are further advantages in terms of scaling of the device 1'' , It is because of a simple variation of the number of module pairs 16 Ideal and easy to adapt to different performance requirements.

Claims (23)

Device for producing virtually pure hydrogen by reforming feedstocks which comprise at least one starting material comprising carbon and hydrogen and water, wherein the reforming is followed in a region for reacting the feedstocks by at least one hydrogen-selectively permeable hydrogen separation membrane, characterized in that the region for the conversion of the starting materials (E) and the hydrogen separation membrane ( 3 ) in a component (device 1 . 1' . 1'' ) are integrated, and that the carrier material consists essentially of microstructured, monocrystalline silicon. Device according to claim 1, characterized in that that the field of implementation of the feedstocks as a carrier material for the Hydrogen separation membrane is formed. This carrier material Can be especially porous be. Device according to Claim 1 or 2, characterized that the area of implementation of the starting materials at least one having catalytically active substance on the carrier material. Apparatus according to claim 3, characterized in that the region of implementation of the starting materials (E) a plurality of successively connected in the flow direction portions ( 9a - 9g each in contact with a portion of the hydrogen separation membrane ( 3 ) are. Apparatus according to claim 4, characterized in that the subregions ( 9a - 9g ) through structures ( 6 ) are formed, which consist essentially of pores, which at one of its sides (pore bottom 10 ) through the hydrogen separation membrane ( 3 ) are limited. Device according to claim 5, characterized in that the structures ( 6 ) are arranged so that a meandering flow through the individual sections ( 9a - 9g ). Device according to one of claims 4 to 6, characterized in that at least one of the subregions ( 9a - 9g ) of the range for the conversion of the starting materials as Wassergasshiftstufe is operable. Device according to one of claims 1 to 7, characterized in that the component (device 1 . 1' . 1'' ) an entrance opening ( 4 ) for the starting materials (E) and an outlet ( 5 ) for the residual gas (R), the component otherwise being isolated from the hydrogen separation membrane ( 3 ) is gas-tight limited. Device according to one of claims 1-8, characterized in that the component (device 1' - 1'' ) consists essentially of at least one pair (module pair 16 ) of the same design, mirror images and staggered by half a structural length (x) arranged modules ( 7 ) from the carrier material ( 2 ) consists. Apparatus according to claim 9, characterized in that several of the module pairs ( 16 ) in the component (device 1'' ) are fluidically connected in series and / or parallel, wherein the structures of the modules and the module pairs are in heat-conducting contact with each other. Device according to claim 9 or 10, characterized in that at least one of the pairs of modules ( 16 ) is designed as a water gas shift stage. Method for producing a device with a porous component consisting of microstructured monocrystalline silicon (device 1 . 1' . 1'' ) and a hydrogen-selectively permeable hydrogen separation membrane for producing virtually pure hydrogen from at least one carbon and hydrogen-containing starting material, characterized in that in a first process step on one side of a substrate at least one as hydrogen separation membrane ( 3 ) is applied suitable layer; in a second process step into the other, opposite side of the substrate ( 11 ) Structures ( 6 ) are etched through the substrate; in a third process step at least one catalytically active material ( 8th ) is applied to the structures; and in a fourth method step, two each produced according to the first three method steps, with their structures ( 6 ) and mutually offset by half the length of the structure (x) arranged substrates ( 11 , Module 7 ) to the component (device 1'' ), which then has a meandering channel structure for the incoming gases. Method according to claim 12, characterized in that that the etching The structures are done in such a way that they first by means of a photolithographic process defined and then by etching processes transferred to the substrate become; Method according to claim 12, characterized in that on the side of the structures ( 6 ) in an edge region of the substrate by means of a photolithographic process adjusting structures ( 15 ) and by etching into the substrate ( 11 ) be transmitted. Process according to claim 11, 12 or 13, characterized in that as substrate ( 11 ) monocrystalline silicon is used. Process according to claim 16, characterized in that the hydrogen separation membrane ( 3 ) suitable layer on at least one between it and the substrate ( 11 ) arranged buffer layer ( 12 . 13 ) is sputtered. Method according to claim 17, characterized in that as buffer layer ( 12 ) at least one layer of a silicon compound is applied, which on the substrate ( 11 ) is sputtered. Method according to claim 17 or 18, characterized in that the buffer layer ( 12 ) on its side facing away from the substrate at least one metallic layer ( 13 ). Method according to one of claims 12 to 19, characterized that as an etching plasma etching and / or anodic etching is used. Method according to one of claims 11 to 19, characterized in that the substrates ( 11 , Modules 7 ) are joined together by flip-chip analog bonding. Method according to one of claims 11 to 19, characterized in that the substrates ( 11 , Modules 7 ) are joined together in the fourth method step by metallic wafer bonding. Method according to one of claims 12 to 20, characterized that the catalytically active material by sputtering or vapor deposition is applied to the structures. Method according to one of claims 12 to 23, characterized in that the structures ( 6 ) consist essentially of pores, which on one side (pore bottom 10 ) through the hydrogen separation membrane ( 3 ).