DE102004018477A1 - Semiconductor module e.g. for power converters, has first electrode between heat-sinks and second electrode between first electrode and second heat sink - Google Patents
Semiconductor module e.g. for power converters, has first electrode between heat-sinks and second electrode between first electrode and second heat sink Download PDFInfo
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- DE102004018477A1 DE102004018477A1 DE102004018477A DE102004018477A DE102004018477A1 DE 102004018477 A1 DE102004018477 A1 DE 102004018477A1 DE 102004018477 A DE102004018477 A DE 102004018477A DE 102004018477 A DE102004018477 A DE 102004018477A DE 102004018477 A1 DE102004018477 A1 DE 102004018477A1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Die Erfindung betrifft ein Halbleitermodul mit wenigstens einem Halbleiterelement. Solche Halbleitermodule werden beispielsweise bei Stromrichtern eingesetzt. Infolge der fortwährend steigenden Integrationsdichte sowie der ständigen Verbesserung des strukturellen Aufbaus der in den Halbleitermodulen eingesetzten Halbleiterelemente (Chips) werden zunehmend höhere Leistungen auf immer kleinerem Raum geschaltet. Damit einhergehend steigt auch der Kühlbedarf solcher Halbleitermodule. Derzeit liegt der die Schaltleistung begrenzende Faktor solcher Module in deren Kühlung.The The invention relates to a semiconductor module having at least one semiconductor element. Such semiconductor modules are used for example in converters. As a result of continually increasing integration density and the constant improvement of the structural Structure of the semiconductor elements used in the semiconductor modules (Chips) are getting higher Services switched to ever smaller space. Consequently the need for cooling also increases such semiconductor modules. Currently, this is the switching power limiting Factor of such modules in their cooling.
Ein
derartiges Halbleitermodul ist beispielsweise aus der
Die
Der Nachteil dieser Anordnungen besteht in der einseitigen und damit unzureichenden Wärmeabfuhr, sowie darin, dass sie zum Schutz vor äußeren Beschädigungen sowie zur elektrischen Isolation ein Gehäuse aufweisen. Durch das Gehäuse wird die Wärmeableitung von den Halbleiterelementen in jedem Fall erschwert.Of the Disadvantage of these arrangements consists in the one-sided and thus insufficient heat dissipation, and in that they protect against external damage and electrical Isolation a housing exhibit. Through the housing will heat dissipation complicated by the semiconductor elements in any case.
Es ist daher die Aufgabe der vorliegenden Erfindung, ein Halbleitermodul mit einer verbesserten Wärmeableitung bereitzustellen.It Therefore, the object of the present invention is a semiconductor module with improved heat dissipation provide.
Diese Aufgabe wird durch ein Halbleitermodul mit den Merkmalen des Anspruchs 1 gelöst. Vorteilhafte Ausführungsformen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen.These The object is achieved by a semiconductor module having the features of the claim 1 solved. Advantageous embodiments and further developments of the invention are the subject of dependent claims.
Das erfindungsgemäße Halbleitermodul weist einen ersten Kühlkörper und eine zweiten Kühlkörper auf, die einander gegenüberliegend und voneinander beabstandet angeordnet sind. Des weiteren umfasst das Halbleitermodul noch eine erste und eine zweite Elektrode, wobei die erste Elektrode zwischen dem ersten Kühlkörper und dem zweiten Kühlkörper und die zweite Elektrode zwischen der ersten Elektrode und dem zweiten Kühlkörper angeordnet ist.The inventive semiconductor module has a first heat sink and a second heat sink on, opposite each other and spaced from each other. Furthermore includes the semiconductor module still a first and a second electrode, wherein the first electrode between the first heat sink and the second heat sink and the second electrode between the first electrode and the second Heat sink is arranged.
Zwischen dem ersten Kühlkörper und dem zweiten Kühlkörper ist wenigstens ein steuerbares Halbleiterelement angeordnet, das eine erste Seite und eine dieser gegenüberliegende zweite Seite aufweist. Dabei ist die erste Seite dem ersten Kühlkörper zugewandt und steht mit diesem in thermischem Kontakt. Entsprechend ist die zweite Seite dem zweiten Kühlkörper zugewandt und steht mit diesem ebenfalls in thermischem Kontakt.Between the first heat sink and the second heat sink is at least one controllable semiconductor element is arranged, which has a first side and one of these opposite second side has. The first side faces the first heat sink and stands by this in thermal contact. The second page is corresponding facing the second heat sink and is in thermal contact with it as well.
Darüber hinaus umfasst das wenigstens eine steuerbare Halbleiterelement einen ersten Anschlusskontakt zur Steuerung des steuerbaren Halbleiterelements. Dieser ist mittels einer Isolierfolie, insbesondere gegenüber wenigstens einem weiteren Anschlusskontakt desselben Halbleiterelementes, elektrisch isoliert.Furthermore the at least one controllable semiconductor element comprises a first Connection contact for controlling the controllable semiconductor element. This is by means of an insulating film, in particular against at least another terminal contact of the same semiconductor element, electrically isolated.
Die erfindungsgemäße Anordnung ermöglicht es, die in einem steuerbaren Halbleiterelement anfallende Verlustwärme über zwei einander gegenüberliegende Seiten des steuerbaren Halb leiterelements unter Verwendung zweier einander ebenfalls gegenüberliegender Kühlkörper abzuführen.The inventive arrangement allows it, the heat loss in a controllable semiconductor element over two opposite each other Side of the controllable semiconductor element using two each other also opposite each other Dissipate heat sink.
Dazu ist das steuerbare Halbleiterelement mit seiner ersten bzw. zweiten Seite bevorzugt großflächig mit jeweils einem der einander gegenüberliegenden Kühlkörper thermisch kontaktiert.To is the controllable semiconductor element with its first and second Site prefers large area with each one of the opposite Heat sink thermal contacted.
Wegen der üblicherweise sehr geringen Abmessungen derartiger steuerbarer Halbleiterelemente ist es schwierig, den zur Steuerung vorgesehenen ersten Anschlusskontakt elektrisch zu kontaktieren, ohne dabei die thermische Kontaktierung zwischen dem steuerbaren Halbleiterelement und zumindest einem der Kühlkörper signifikant zu verschlechtern oder aufzuheben. Die elektrische Kontaktierung des Steueranschlusses, d.h. des ersten Anschlusskontaktes eines Halbleiterelementes erfordert gleichzeitig eine elektrische Isolierung dieses Steueranschlusses insbesondere gegenüber anderen Anschlusskontakten desselben Halbleiterelementes oder gegenüber einer mit einem anderen Anschlusskontakt elektrisch verbundenen Elektrode, sowie eine gute thermische Kopplung zwischen dem betreffenden steuerbaren Halbleiterelement und den beiden Kühlkörpern. Dies wird erfindungsgemäß auf zwei Varianten erreicht.Because of the usual very small dimensions of such controllable semiconductor elements it is difficult to provide the first terminal provided for control to contact electrically, without doing the thermal contact between the controllable semiconductor element and at least one of Heatsink significantly to worsen or cancel. The electrical contact of the control terminal, i. of the first terminal contact of a Semiconductor element requires at the same time an electrical insulation this control terminal in particular with respect to other connection contacts the same semiconductor element or one with another Connection contact electrically connected electrode, as well as a good thermal Coupling between the relevant controllable semiconductor element and the two heat sinks. This is according to the invention to two Variants achieved.
Die erste Varianten hierzu sieht die Verwendung einer Folienstruktur vor, die eine oder mehrere strukturierte, bevorzugt thermisch gut leitende Folienschichten aufweist, wobei zumindest eine Folienschicht den ersten Anschlusskontakt gegenüber einem anderen Anschlusskontakt desselben Halbleiterelementes, z.B. gegenüber einem Lastanschluss oder einer mit diesem elektrisch verbundenen Elektrode, elektrisch isoliert. Eine derartige Folienstruktur weist bevorzugt sowohl elektrisch leitende und elektrisch isolierende Folienschichten. Die Folienstruktur kann eine oder mehrere elektrisch leitende Folienschichten aufweisen und mit Durchkontaktierungen versehen sein, die zwei oder mehrere dieser elektrisch leitenden Folienschichten elektrisch miteinander verbinden.The first variants for this provide for the use of a film structure which has one or more structured, preferably thermally highly conductive film layers, wherein at least one film layer has the first connection contact with respect to another connection contact of the same semiconductor element, eg with respect to a load connection or an electrode electrically connected thereto, electrically insulated. Such a film structure preferably has both electrically conductive and electrically insulating film layers. The film structure may have one or more electrically conductive film layers and be provided with plated-through holes, which electrically connect two or more of these electrically conductive film layers.
Als elektrisch isolierende Folien eignen sich beispielsweise Kunststoffmaterialien auf Polyimid-, Polyethylen-, Polyphenol-, Polyetheretherketon- und/oder auf Epoxidbasis. Besonders bevorzugt wegen ihrer gleichzeitig hervorragenden thermischen Leitfähigkeit sind diamantartige Kohlenstoff- oder DLC-Schichten (DLC = diamondlike carbon).When electrically insulating films are, for example, plastic materials on polyimide, polyethylene, polyphenol, polyetheretherketone and / or on an epoxy basis. Particularly preferred because of their outstanding at the same time thermal conductivity are diamond-like carbon or DLC layers (DLC = diamondlike carbon).
Gemäß der zweiten Variante ist zumindest eine der Elektroden strukturiert und auf einem isolierenden Träger angeordnet, beispielsweise wie die strukturierte Metallisierung eines DCB-Substrates. Dabei ist der erste Anschlusskontakt des Halbleiterelementes elektrisch mit einer Teilstruktur der strukturierten Metallisierung verbunden, jedoch insbesondere gegenüber zumindest einem der Lastanschlüsse desselben Halbleiterelementes elektrisch isoliert.According to the second Variant, at least one of the electrodes is structured and on an insulating carrier arranged, for example, as the structured metallization a DCB substrate. In this case, the first connection contact of the semiconductor element electrically with a substructure of the structured metallization connected, but in particular to at least one of the load terminals thereof Semiconductor element electrically isolated.
Die Erfindung wird nachfolgend anhand der beigefügten Figuren näher erläutert. Es zeigen:The The invention will be explained in more detail with reference to the accompanying figures. It demonstrate:
In den Figuren bezeichnen, sofern nicht anders angegeben gleiche Bezugszeichen gleiche Teile mit gleicher Bedeutung.In denote the figures, unless otherwise indicated the same reference numerals same parts with the same meaning.
Das
in
Gemäß einer
bevorzugten Ausführungsform kann
wenigstens eine dieser Elektroden
Der
erste Kühlkörper
Zwischen
den Kühlkörpern
Die
steuerbaren Halbleiterelemente
Gemäß einer
bevorzugten Ausführungsform sind
die Halbleiterelemente
Die
nicht dargestellten Steueranschlüsse
der steuerbaren Halbleiterelemente
Entsprechend
sind auf den betreffenden zweiten Seiten
Die
elektrisch leitende Verbindung zwischen Anschlüssen
Der
Aufbau dieser Folienstruktur
Die
in
Auf
diese strukturierte Folienschicht
Der
mit dem Steueranschluss
Zwischen
dem Abschnitt
Bei
einer Druckkontaktierung werden miteinander elektrisch und/oder
thermisch zu kontaktierende Elemente durch eine äußere Kraft, beispielsweise durch
zwei miteinander verschraubte Kühlkörper
Die
Unebenheiten entstehen an Stellen wie beispielsweise dem Steueranschluss
Wie
anhand der
Anstelle
einer Druckkontaktierung ist es ebenso möglich, die elektrisch leitende
Folienschicht
Wenn
die Halbleiterelemente
In
den bisherigen Ausführungsbeispielen wurde
gezeigt, wie die elektrische Verbindung zwischen den auf den zweiten
Seiten
Anhand
der
Wie
eingangs erwähnt,
kann – wie
in
Die
Einheit
Die
elektrisch leitenden Verbindungen zwischen Abschnitten
Anstelle
der Ausgleichsschicht
Die
Federelemente
Wie
in
Wenn
die Halbleiterelemente
Bei
den bisher gezeigten Ausführungsbeispielen
ist es bedingt durch die geometrische Anordnung der Halbleiterelemente
Bei
bestimmten Anwendungen, beispielsweise bei Halbbrücken-Halbleitermodulen,
sind zwei steuerbare Halbleiterelemente bzw. zwei Einheiten aus
parallel geschalteten Halbleiterelementen in Reihe zu schalten.
In
Die
Anordnung aus der zweiten Elektrode
Die
dritte Elektrode
Anstelle
der dritten Elektrode
Die
Halbleiterelemente
Dabei
weisen Folienschichten
Des
weiteren sind die Anschlusskontakte, die auf denselben Seiten angeordnet
sind wie der Steueranschluss
Ist
der Steueranschluss
Dabei
ist es jederzeit möglich,
entsprechend der in den
Ein
Schaltbild von gemäß den
Neben den verbesserten Kühleigenschaften eines erfindungsgemäßen Halbleitermoduls ergibt sich darüber hinaus der Vorteil, dass die Anordnung durch die zwei einander gegenüberliegenden Kühlkörper kein festes Gehäuse benötigt. Es ist jedoch vorteilhaft, zumindest den Bereich, in denen die steuerbaren Halbleiterelemente bzw. die Freilaufdioden angeordnet sind, mit einer vorzugsweise hermetisch dichten Umhüllung zu versehen, um das Eindringen von Schmutz und Feuchtigkeit zu verhindern, da hierdurch Kriechstrecken und Kurzschlüsse erzeugt werden können.Next the improved cooling properties of a inventive semiconductor module results from it addition, the advantage that the arrangement by the two opposite Heatsink no solid housing needed. However, it is advantageous at least the area where the controllable Semiconductor elements or the freewheeling diodes are arranged with a preferably hermetically sealed enclosure to prevent the ingress of Dirt and moisture to prevent, as a result, creepage distances and short circuits can be generated.
Zur
elektrischen Isolation nach außen
sowie zur Befestigung weiterer Anbauteile wie beispielsweise einem
Stützkondensator
ist es jedoch vorteilhaft, eine oder mehrere an zumindest einem
der Kühlkörper befestigten
Halteplatten vorzusehen, die vorzugsweise auch zur Montage des Halbleitermoduls verwendet
werden können.
Eine bevorzugte Ausführungsform
eines erfindungsgemäßen Halbleitermoduls
mit zwei einander gegenüberliegenden
Halteplatten
Die
Kühlkörper
Um
ein erfindungsgemäßes Halbleitermodul in
bestimmten Bereichen nach außen
hin zu isolieren, wie das beispielsweise bei mehreren, bevorzugt bei
zwei oder drei nebeneinander angeordneten und besonders bevorzugt
zu einer Mehrlevelschaltung in Reihe geschalteten Halbleitermodulen
erforderlich sein kann, ist es möglich,
an entsprechenden Stellen auf der Außenseite der Halbleitermodule
zumindest abschnittweise Isolierungen anzubringen. Bei dem in
Der
mit der dritten Elektrode
Eine
Seitenansicht dieses Halbleitermoduls bei entfernter Isolierung
Um die Servicefreundlichkeit zu erhöhen, kann das Halbleitermodul steckbar ausgebildet sein, wobei entsprechende Steckverbinder bevorzugt auf einer Seite, beispielsweise an der Rückseite des Halbleitermoduls angeordnet sind. Damit kann das Halbleitermodul auf einfache Weise von einem passenden Steckplatz abgezogen und beispielsweise durch ein anderes ersetzt werden.Around the service friendliness can increase the semiconductor module be pluggable, with corresponding Connector preferably on one side, for example on the back of the semiconductor module are arranged. This allows the semiconductor module easily deducted from a suitable slot and for example, be replaced by another.
- 1010
- erster Kühlkörperfirst heatsink
- 2020
- zweiter Kühlkörpersecond heatsink
- 11a, 12a, 13a11a, 12a, 13a
- Elektrodeelectrode
- 11x, 12x, 13x11x, 12x, 13x
- äußerer Anschlussouter connection
- 12b, 13b12b, 13b
- Trägercarrier
- 12c-e12c-e
- Abschnitt einer Elektrodesection an electrode
- 30, 4030 40
- steuerbares Halbleiterelementcontrollable Semiconductor element
- 50, 6050, 60
- FreilaufdiodeFreewheeling diode
- 30a-c, 40a-c30a-c, 40a-c
- Anschlusskontaktconnection contact
- 50a, 50b, 60a, 60b50a, 50b, 60a, 60b
- Anschlusskontaktconnection contact
- 31, 41, 51, 6131 41, 51, 61
- erste Seitefirst page
- 32, 42, 52, 6232 42, 52, 62
- zweite Seitesecond page
- 71, 7271, 72
- Ausgleichsschichtleveling layer
- 71a-c, 72a-c71a-c, 72a-c
- Abschnitt einer Ausgleichsschichtsection a leveling layer
- 75, 7675, 76
- Federelementspring element
- 95, 10595, 105
- elektrisch leitende Folienschichtelectrical conductive foil layer
- 95a, 105a95a, 105a
- Abschnitt einer elektrisch leitensection one electrically conduct
- den Folienschichtthe film layer
- 91, 92, 101, 10291 92, 101, 102
- elektrisch isolierende Folienelectrical insulating films
- schichtlayer
- 91a, 92a-d, 101a, 102a-d91a, 92a-d, 101a, 102a-d
- Abschnitt einer elektrisch leitensection one electrically conduct
- den Folienschichtthe film layer
- 9494
- Lötschichtsolder layer
- 100a, 100b100a, 100b
- HalteplatteRetaining plate
- 111a, 111b111a, 111b
- Isolierschichtinsulating
- 110110
- Stützkondensatorbackup capacitor
- 111a, 111b111a, 111b
- Isolierunginsulation
- 112a, 112b112a, 112b
- Verbindungselementconnecting element
- 113a, 113b113a, 113b
- Spannscheibetensioning pulley
- 200200
- Steuereinheitcontrol unit
Claims (24)
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532512A (en) * | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
US20030025197A1 (en) * | 1999-12-21 | 2003-02-06 | Makoto Imai | Cooling structure for multichip module |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1014451A4 (en) * | 1997-03-26 | 2000-11-15 | Hitachi Ltd | Flat semiconductor device and power converter employing the same |
DE19719703C5 (en) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Power semiconductor module with ceramic substrate |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
AT411126B (en) * | 2001-04-06 | 2003-09-25 | Siemens Ag Oesterreich | SEMICONDUCTOR MODULE |
-
2004
- 2004-04-16 DE DE102004018477A patent/DE102004018477B4/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532512A (en) * | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
US20030025197A1 (en) * | 1999-12-21 | 2003-02-06 | Makoto Imai | Cooling structure for multichip module |
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