DE102004015307A1 - Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface - Google Patents
Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface Download PDFInfo
- Publication number
- DE102004015307A1 DE102004015307A1 DE102004015307A DE102004015307A DE102004015307A1 DE 102004015307 A1 DE102004015307 A1 DE 102004015307A1 DE 102004015307 A DE102004015307 A DE 102004015307A DE 102004015307 A DE102004015307 A DE 102004015307A DE 102004015307 A1 DE102004015307 A1 DE 102004015307A1
- Authority
- DE
- Germany
- Prior art keywords
- temperature jump
- preparing
- carbon
- semiconductor body
- subsequent treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052799 carbon Inorganic materials 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
Preparing the surface (3) of a semiconductor body (1) for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface. Preferred Features: The specific atmosphere contains oxygen, preferably atomic oxygen, ozone or a gas which releases atomic oxygen or ozone. The temperature jump is carried out at 400-500 [deg] C. The surface is cleaned before the temperature jump.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004015307A DE102004015307A1 (en) | 2004-03-29 | 2004-03-29 | Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004015307A DE102004015307A1 (en) | 2004-03-29 | 2004-03-29 | Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102004015307A1 true DE102004015307A1 (en) | 2005-10-20 |
Family
ID=35033944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004015307A Ceased DE102004015307A1 (en) | 2004-03-29 | 2004-03-29 | Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102004015307A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5028560A (en) * | 1988-06-21 | 1991-07-02 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate |
US5849102A (en) * | 1996-02-28 | 1998-12-15 | Nec Corporation | Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere |
US6451713B1 (en) * | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
US6589877B1 (en) * | 1998-02-02 | 2003-07-08 | Micron Technology, Inc. | Method of providing an oxide |
EP1427003A2 (en) * | 2002-12-02 | 2004-06-09 | OHMI, Tadahiro | Semiconductor device and method of manufacturing the same |
-
2004
- 2004-03-29 DE DE102004015307A patent/DE102004015307A1/en not_active Ceased
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5028560A (en) * | 1988-06-21 | 1991-07-02 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate |
US5849102A (en) * | 1996-02-28 | 1998-12-15 | Nec Corporation | Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere |
US6589877B1 (en) * | 1998-02-02 | 2003-07-08 | Micron Technology, Inc. | Method of providing an oxide |
US6451713B1 (en) * | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
EP1427003A2 (en) * | 2002-12-02 | 2004-06-09 | OHMI, Tadahiro | Semiconductor device and method of manufacturing the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |