DE102004008785A1 - Semiconductor unit, comprises a storage cell with primary and secondary electrodes, and an intermediate organic compound layer - Google Patents

Semiconductor unit, comprises a storage cell with primary and secondary electrodes, and an intermediate organic compound layer Download PDF

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Publication number
DE102004008785A1
DE102004008785A1 DE102004008785A DE102004008785A DE102004008785A1 DE 102004008785 A1 DE102004008785 A1 DE 102004008785A1 DE 102004008785 A DE102004008785 A DE 102004008785A DE 102004008785 A DE102004008785 A DE 102004008785A DE 102004008785 A1 DE102004008785 A1 DE 102004008785A1
Authority
DE
Germany
Prior art keywords
primary
organic compound
storage cell
secondary electrodes
compound layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102004008785A
Other languages
German (de)
Inventor
Marcus Halik
Ute Zschieschang
Hagen Klauk
Guenter Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE102004008785A priority Critical patent/DE102004008785A1/en
Publication of DE102004008785A1 publication Critical patent/DE102004008785A1/en
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer

Abstract

Semiconductor arrangement comprises a storage cell with primary and secondary electrodes, and an intermediate layer. The latter is a self-organised mono-layer of an organic compound. The compound consists of an anchor group of phosphonic acid derivatives, a primary link group, and an active centre.
DE102004008785A 2004-02-23 2004-02-23 Semiconductor unit, comprises a storage cell with primary and secondary electrodes, and an intermediate organic compound layer Ceased DE102004008785A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102004008785A DE102004008785A1 (en) 2004-02-23 2004-02-23 Semiconductor unit, comprises a storage cell with primary and secondary electrodes, and an intermediate organic compound layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004008785A DE102004008785A1 (en) 2004-02-23 2004-02-23 Semiconductor unit, comprises a storage cell with primary and secondary electrodes, and an intermediate organic compound layer

Publications (1)

Publication Number Publication Date
DE102004008785A1 true DE102004008785A1 (en) 2005-10-20

Family

ID=35033818

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004008785A Ceased DE102004008785A1 (en) 2004-02-23 2004-02-23 Semiconductor unit, comprises a storage cell with primary and secondary electrodes, and an intermediate organic compound layer

Country Status (1)

Country Link
DE (1) DE102004008785A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10132640A1 (en) * 2001-07-05 2003-01-23 Infineon Technologies Ag Molecular electronics arrangement and method for producing a molecular electronics arrangement
DE10227850A1 (en) * 2002-06-21 2004-01-15 Infineon Technologies Ag Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10132640A1 (en) * 2001-07-05 2003-01-23 Infineon Technologies Ag Molecular electronics arrangement and method for producing a molecular electronics arrangement
DE10227850A1 (en) * 2002-06-21 2004-01-15 Infineon Technologies Ag Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers

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Legal Events

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ON Later submitted papers
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection