DE1014670C2 - - Google Patents

Info

Publication number
DE1014670C2
DE1014670C2 DE1955S0043086 DES0043086A DE1014670C2 DE 1014670 C2 DE1014670 C2 DE 1014670C2 DE 1955S0043086 DE1955S0043086 DE 1955S0043086 DE S0043086 A DES0043086 A DE S0043086A DE 1014670 C2 DE1014670 C2 DE 1014670C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1955S0043086
Other languages
German (de)
Other versions
DE1014670B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DES43086A priority Critical patent/DE1014670B/de
Publication of DE1014670B publication Critical patent/DE1014670B/de
Application granted granted Critical
Publication of DE1014670C2 publication Critical patent/DE1014670C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
DES43086A 1955-03-18 1955-03-18 Geraet zur Erfassung von Neutronen mit einem Halbleiter Granted DE1014670B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES43086A DE1014670B (de) 1955-03-18 1955-03-18 Geraet zur Erfassung von Neutronen mit einem Halbleiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES43086A DE1014670B (de) 1955-03-18 1955-03-18 Geraet zur Erfassung von Neutronen mit einem Halbleiter

Publications (2)

Publication Number Publication Date
DE1014670B DE1014670B (de) 1957-08-29
DE1014670C2 true DE1014670C2 (no) 1958-02-06

Family

ID=7484591

Family Applications (1)

Application Number Title Priority Date Filing Date
DES43086A Granted DE1014670B (de) 1955-03-18 1955-03-18 Geraet zur Erfassung von Neutronen mit einem Halbleiter

Country Status (1)

Country Link
DE (1) DE1014670B (no)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1025111A (en) * 1962-02-02 1966-04-06 Ass Elect Ind Improvements relating to solid state radiation detectors
US3320421A (en) * 1964-02-27 1967-05-16 Boeing Co Neutron dosimeter comprising nickel oxide with lithium as an impurity

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2608661A (en) * 1945-10-16 1952-08-26 Walter H Zinn Means for measuring radiation

Also Published As

Publication number Publication date
DE1014670B (de) 1957-08-29

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