DE10145364A1 - Production of a ceramic substrate comprises preparing a base body having a stack of layers containing non-sintered ceramic material, arranging and fixing a rigid constrained layer to the uppermost layer of the stack, and removing - Google Patents

Production of a ceramic substrate comprises preparing a base body having a stack of layers containing non-sintered ceramic material, arranging and fixing a rigid constrained layer to the uppermost layer of the stack, and removing

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Publication number
DE10145364A1
DE10145364A1 DE10145364A DE10145364A DE10145364A1 DE 10145364 A1 DE10145364 A1 DE 10145364A1 DE 10145364 A DE10145364 A DE 10145364A DE 10145364 A DE10145364 A DE 10145364A DE 10145364 A1 DE10145364 A1 DE 10145364A1
Authority
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Germany
Prior art keywords
layer
stack
sintering
layers
constraining layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10145364A
Other languages
German (de)
Inventor
Christian Hoffmann
Klaus-Dieter Aichholzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to DE10145364A priority Critical patent/DE10145364A1/en
Publication of DE10145364A1 publication Critical patent/DE10145364A1/en
Ceased legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00Layered products essentially comprising ceramics, e.g. refractory products
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    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2924/181Encapsulation
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
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    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
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    • H05K2203/30Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/308Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs

Abstract

Production of a ceramic substrate comprises: (a) preparing a base body (2) having a stack (2a) of layers (3) containing non-sintered ceramic material; (b) arranging a rigid constrained layer (4) on the upper surface (6) of the uppermost layer (7) of the stack; (c) fixing the constrained layer to the uppermost layer of the stack and sintering the stack; and (d) removing the constrained layer. Preferably sintering is carried out without using external forces. The constrained layer contains pores into which a sintering agent penetrates during sintering. The constrained layer is made from Al2O3. The sintering agent is made from glass.

Description

Die Erfindung betrifft ein Verfahren zur Herstellung eines keramischen Substrats, wobei ein Grundkörper bereitgestellt wird, der einen Stapel von übereinanderliegenden Schichten aufweist. Die Schichten des Stapels enthalten ein ungesintertes Keramikmaterial. In einem darauffolgenden Schritt wird der Stapel gesintert. The invention relates to a method for producing a ceramic substrate, wherein a base body is provided that is a stack of superimposed layers having. The layers of the stack contain one green ceramic material. In a subsequent step the stack sintered.

Verfahren der eingangs genannten Art werden verwendet zur Herstellung von keramischen Vielschichtsubstraten, in das passive Bauelemente integriert werden können. Auf der Oberfläche des Substrats können mittels Verbindungstechnologien, wie SMD, Wire-Bonding oder auch Flip-Chip-Montage aktive Bauelemente montiert werden. Dadurch entstehen aus den keramischen Substraten multifunktionale Module, die insbesondere geeignet sind, Platz einzusparen. Methods of the type mentioned are used for Manufacture of multilayer ceramic substrates in which passive components can be integrated. On the Surface of the substrate can be such as SMD, wire bonding or flip-chip assembly active Components are assembled. This creates from the ceramic substrates multifunctional modules that in particular are suitable to save space.

Aufgrund des geringen Platzbedarfs finden die genannten Module insbesondere Anwendungen auf dem Gebiet der Endgeräte des Mobilfunksektors. Das eingangs genannte Verfahren hat den Nachteil, daß die ungesintertes Keramikmaterial enthaltenden Schichten während des Sinterns parallel zur Schichtebene schrumpfen. Zusätzlich tritt der Effekt des Schrumpfens in Richtung der Schichtdicke auf. Das Schrumpfen der Schichten hat den Nachteil, daß das Bauelement nach dem Sintern Endabmessungen aufweist, die nur sehr eingeschränkt durch die Anfangsabmessungen des bereitgestellten Stapels vorgegeben werden können. Daraus resultiert eine relativ starke Streuung der Dimensionen der keramischen Substrate. Due to the small space requirement, the above mentioned Modules, in particular, applications in the field of terminal equipment Mobile sector. The method mentioned at the beginning has the Disadvantage that the unsintered ceramic material containing Layers parallel to the layer plane during sintering shrink. In addition, the effect of shrinking occurs Direction of the layer thickness. The shrinking of the layers has the disadvantage that the component after sintering Has final dimensions that are only very limited by the Initial dimensions of the stack provided can be. This results in a relatively large spread the dimensions of the ceramic substrates.

Es wird das Ziel verfolgt, für die Schichten des Stapels auch unterschiedliche Keramikmaterialien zu verwenden. Da unterschiedliche Keramikmaterialien im allgemeinen unterschiedlich stark beim Sintern schrumpfen, resultiert daraus das Problem, daß bei unterschiedlichem Schrumpfen der Schichten eine mechanische Instabilität des keramischen Substrats auftreten kann. Analog dem Bimetalleffekt kann es zum Beispiel passieren, daß das keramische Substrat sich verbiegt. Desweiteren ist es möglich, daß sich bei stark unterschiedlichem Schrumpfungsverhalten die einzelnen Schichten voneinander ablösen (Delamination). Da die Formstabilität des keramischen Substrats beziehungsweise die mechanische Stabilität des keramischen Substrats darunter stark leidet, ist ein solches Verhalten unerwünscht. The goal is pursued, for the layers of the stack too to use different ceramic materials. There different ceramic materials are generally different shrinking strongly during sintering, this results in the problem that with different shrinkage of the layers one mechanical instability of the ceramic substrate occur can. Analogous to the bimetal effect, for example happen that the ceramic substrate bends. Furthermore it is possible that with very different Shrinkage behavior separate the individual layers from each other (Delamination). Because the dimensional stability of the ceramic Substrate or the mechanical stability of the ceramic substrate suffers greatly from this, is one Behavior undesirable.

Aus der Druckschrift DE 691 06 830 T2 ist ein Verfahren der eingangs genannten Art bekannt, mit dessen Hilfe das Schrumpfen der Schichten des Stapels in lateraler Richtung vermindert werden soll. Dazu wird vor dem Sintern des Stapels eine flexible Zwangsschicht auf der Oberfläche des Stapels angewandt, wobei die flexible Zwangsschicht fein verteilte Teilchen aus anorganischen Feststoffen umfaßt, die in einem verdampfbaren polymeren Bindemittel dispergiert sind. Die Schichten des in der Entgegenhaltung verwendeten Schichtstapels enthalten ebenfalls ein polymeres Bindemittel und zusätzlich ein anorganisches Bindemittel. Aus der obersten Schicht des Schichtstapels dringt das anorganische Bindemittel in die Zwangsschicht ein. Durch die Flexibilität der Zwangsschicht soll erreicht werden, daß sich die Zwangsschicht der jeweiligen Oberflächentopologie der obersten Schicht des Stapels gut anpaßt. Dies gelingt jedoch im Bereich von Vertiefungen (Kavitäten) nur unvollkommen, so daß an diesen Stellen trotzdem eine erhebliche Änderung der geometrischen Abmessungen des keramischen Substrats während des Sinterns auftritt. Durch das Eindringen des anorganischen Bindemittels von der obersten Schicht des Schichtstapels in die Zwangsschicht wird dafür Sorge getragen, daß eine ausreichende mechanische Haftung der Zwangsschicht auf der obersten Schicht des Schichtstapels gewährleistet ist. Da die Zwangsschicht zur Bildung ihrer Flexibilität ein polymeres Bindemittel enthält, das während des Sinterns beziehungsweise vor dem Sintern des Keramiksubstrats verflüchtigt werden muß, wird auch das Verflüchtigen des in den Schichten des Schichtstapels vorhandenen polymeren Bindemittels behindert. Um überhaupt ein Verflüchtigen des polymeren Bindemittels, das im Schichtstapel vorhanden ist, zu ermöglichen, wird die Zwangsschicht als poröse Schicht ausgebildet. Die Durchdringung der Zwangsschicht mit dem anorganischen Bindemittel des keramischen Körpers darf nicht mehr als 50 µm betragen, da ansonsten das Entfernen der Zwangsschicht im Anschluß an das Sintern des Grundkörpers stark erschwert wird. Eine zu geringe Durchdringung der Zwangsschicht mit dem anorganischen Bindemittel ist allerdings auch nicht erwünscht, da ansonsten die Zwangsschicht nicht ausreichend fest auf der Oberfläche des Schichtstapels haftet. Für die Zwangsschicht wird ein Material verwendet, das während der Sinterung des Schichtstapels nicht mitsintert und somit auch keiner Schrumpfung, insbesondere in lateraler Richtung, unterliegt. Dieses fehlende Schrumpfen der Zwangsschicht überträgt sich unmittelbar auf die oberste Schicht des Schichtstapels, die aufgrund der relativ festen Anbindung an die Zwangsschicht am Schrumpfen gehindert wird. Durch die oberste Schicht des Schichtstapels werden auch die im folgenden weiter unterhalb der obersten Schicht des Schichtstapels angeordneten Schichten am Schrumpfen gehindert, und zwar in dem Maße, wie die Schichtdicke der einzelnen Schichten und die Festigkeit ihrer mechanischen Anbindung untereinander dies zulassen. Je stärker die mechanische Kopplung zwischen den Schichten des Schichtstapels ist, um so geringer ist die laterale Schrumpfung der einzelnen Schichten. From the publication DE 691 06 830 T2 is a method of known type, with the help of which Shrink the layers of the stack in the lateral direction should be reduced. To do this, one is used before sintering the stack flexible constraint on the surface of the stack applied, with the flexible constraint finely divided Includes particles of inorganic solids, which in one evaporable polymeric binders are dispersed. The Layers of that used in the citation Layer stacks also contain a polymeric binder and additionally an inorganic binder. From the top one Layer of the layer stack penetrates the inorganic Binder into the constraint layer. Due to the flexibility of the Compulsory shift should be achieved that the Compulsory layer of the respective topology of the top one Adapts layer of the stack well. However, this succeeds in Area of depressions (cavities) only imperfectly, so that at these points a significant change in the geometric dimensions of the ceramic substrate during the Sintering occurs. By penetrating the inorganic Binder from the top layer of the layer stack in the constraint is taken care that a sufficient mechanical adhesion of the constraint layer on the top one Layer of the layer stack is guaranteed. Since the Compulsory layer to form their flexibility a polymer Contains binder during sintering or before the sintering of the ceramic substrate must be evaporated, will also volatilize the in the layers of the Layer stack existing polymeric binder hindered. Around any volatilization of the polymeric binder that is present in the layer stack, the Forced layer formed as a porous layer. The Penetration of the constraint layer with the inorganic binder of ceramic body must not be more than 50 µm, because otherwise removing the constraint layer after that Sintering of the base body is made very difficult. One too low penetration of the constraint layer with the inorganic Binder is not desirable either, because otherwise the constraint layer is not sufficiently firm on the surface of the layer stack is liable. For the compulsory shift, a Material used during the sintering of the Layer stack not sintered and therefore no shrinkage, especially in the lateral direction. This missing The shrinking of the compulsory layer is immediately transferred the top layer of the layer stack, which is due to the relatively firm connection to the constraint layer on shrinking is prevented. Through the top layer of the layer stack are also below the top one Layer of the layer stack arranged layers on Shrinkage prevented, to the extent that the layer thickness of the individual layers and the strength of their mechanical Allow connection to each other. The stronger the is mechanical coupling between the layers of the layer stack, the smaller the lateral shrinkage of the individual Layers.

Das bekannte Verfahren hat den Nachteil, daß die Zwangsschicht aufgrund ihres Gehaltes an einem polymeren Bindemittel das Verflüchtigen des polymeren Bindemittels aus den Schichten des Schichtstapels behindert. Darüber hinaus hat das bekannte Verfahren den Nachteil, daß die Zwangsschicht flexibel ist, weswegen ein gewisses Mindestschrumpfen während des Sinterns nicht verhindert werden kann. Darüber hinaus können durch die flexible Zwangsschicht Verbiegungen oder Verwerfungen des Schichtstapels während des Sinterns nur schlecht kontrolliert werden. The known method has the disadvantage that the Compulsory layer due to its content of a polymer Binder the volatilization of the polymeric binder from the Layers of the layer stack hindered. It also has the known method has the disadvantage that the constraint is flexible, which is why a certain minimum shrinkage during sintering cannot be prevented. Furthermore can be bent or bent by the flexible constraint layer Warps of the layer stack during sintering only be badly controlled.

Ziel der vorliegenden Erfindung ist es daher, ein Verfahren zur Herstellung eines keramischen Substrats bereitzustellen, mit dessen Hilfe eine gute Kontrolle der Schrumpfung des Schichtstapels während des Sinterns ermöglicht wird. Insbesondere soll ein Verfahren bereitgestellt werden, mit dessen Hilfe Verwerfungen und Verbiegungen des Schichtstapels während des Sinterns kontrolliert werden können. The aim of the present invention is therefore a method to provide for the production of a ceramic substrate, with its help a good control of the shrinkage of the Layer stack is made possible during the sintering. In particular, a method is to be provided with which Help warping and warping the layer stack can be controlled during sintering.

Dieses Ziel wird erfindungsgemäß durch ein Verfahren nach Patentanspruch 1 erreicht. Vorteilhafte Ausgestaltungen der Erfindung sind den weiteren Patentansprüchen zu entnehmen. This goal is achieved according to the invention by a method Claim 1 reached. Advantageous embodiments of the Invention can be found in the further claims.

Die Erfindung gibt ein Verfahren zur Herstellung eines keramischen Substrats an, bei dem in einem ersten Schritt ein Grundkörper bereitgestellt wird, der einen Stapel von übereinanderliegenden Schichten enthält. Die übereinanderliegenden Schichten enthalten ein ungesintertes Keramikmaterial. In einem darauf folgenden Schritt wird eine starre Zwangsschicht auf der Oberfläche der obersten Schicht des Stapels angeordnet. In einem weiteren Schritt wird die Zwangsschicht auf der obersten Schicht befestigt und der Stapel gesintert. Schließlich wird die Zwangsschicht vom Stapel entfernt. The invention provides a method for producing a ceramic substrate, in which in a first step Base body is provided, which is a stack of contains superimposed layers. The Overlying layers contain an unsintered ceramic material. In a subsequent step becomes a rigid constraint on the surface of the top layer of the stack arranged. In a further step, the constraint layer on the top layer attached and the stack sintered. Finally, the constraint layer is removed from the stack.

Unter einer starren Zwangsschicht ist dabei eine Schicht zu verstehen, die beim Sintern des Stapels nicht schrumpft. Eine geeignete starre Zwangsschicht wäre beispielsweise eine Aluminiumoxid enthaltende keramische Platte, die bei wesentlich höheren Temperaturen gesintert worden ist, als die Sintertemperatur des Stapels. A layer is closed under a rigid compulsory layer understand that does not shrink when sintering the stack. A a suitable rigid constraint layer would be, for example Ceramic plate containing alumina, which is essential has been sintered at temperatures higher than that Sintering temperature of the stack.

Das erfindungsgemäße Verfahren hat den Vorteil, daß aufgrund der starren Zwangsschicht sowohl das laterale Schrumpfen des Schichtstapels während des Sinterns als auch Verbiegungen und Verwerfungen des Schichtstapels gut kontrolliert werden können. The method has the advantage that due to the rigid constraint layer, the lateral shrinkage of the Layer stack during sintering as well as bends and Warpage of the layer stack can be controlled well can.

Da die starre Zwangsschicht auf der Oberfläche der obersten Schicht des Stapels befestigt ist und mithin an dieser haftet, kann das Sintern des Schichtstapels in einer vorteilhaften Ausführungsform der Erfindung kräftefrei erfolgen. Es muß also nicht mit einer Kraft die Zwangsschicht oder eine andere starre Platte oder auch ein starrer Rahmen auf die Oberfläche des Schichtstapels gedrückt werden. Dadurch vereinfacht sich die mechanische Vorrichtung zum Sintern des Schichtstapels, da standardmäßige Sintervorrichtungen, die das einfache Einschieben des zu sinternden Körpers in den Sinterofen vorsehen, verwendet werden können. Because the rigid constraint layer on the surface of the top one Layer of the stack is attached and therefore to this adheres, the sintering of the layer stack in one advantageous embodiment of the invention take place without forces. It must therefore not with one force the constraint or another rigid plate or a rigid frame on the surface of the layer stack are pressed. This simplifies the mechanical device for sintering the layer stack, because standard sintering devices that make the simple Push the body to be sintered into the sintering furnace provide, can be used.

Die oberste Schicht des Schichtstapels kann ein Sinterhilfsmittel enthalten, das während des Sinterns fließfähig wird. Dadurch kann während des Sinterns die Befestigung der Zwangsschicht auf der obersten Schicht erfolgen. The top layer of the layer stack can be a Contain sintering aids that become fluid during sintering. This allows the attachment of the Forced shift on the top layer.

In einer vorteilhaften Ausführungsform der Erfindung kann die Zwangsschicht Poren aufweisen, in die das Sinterhilfsmittel während des Sinterns eindringt. Da das Sinterhilfsmittel während des Sinterns fließfähig wird, kann es in die Poren der Zwangsschicht eindringen. Geeignete Poren der Zwangsschicht hätten eine Ausdehnung von 5 bis 10 µm, wobei eine geeignete Ausdehnung der Poren auch von der Viskosität des Sinterhilfsmittels während des Sinterns abhängt. In einer beispielhaften Ausführungsform der Erfindung kann als Sinterhilfsmittel ein Glas verwendet werden, das SiO2 und Kalzium enthält. In an advantageous embodiment of the invention, the constraining layer can have pores into which the sintering aid penetrates during the sintering. Since the sintering aid becomes fluid during sintering, it can penetrate into the pores of the constraint layer. Suitable pores of the constraining layer would have an expansion of 5 to 10 μm, a suitable expansion of the pores also being dependent on the viscosity of the sintering aid during sintering. In an exemplary embodiment of the invention, a glass which contains SiO 2 and calcium can be used as the sintering aid.

In einer weiteren vorteilhaften Ausführungsform der Erfindung wird die Zwangsschicht und das Sinterhilfsmittel so gewählt, daß das Sinterhilfsmittel während des Sinterns mit Bestandteilen der Zwangsschicht chemisch reagiert. In a further advantageous embodiment of the invention the constraint layer and the sintering aid are chosen so that the sintering aid with during the sintering Components of the compulsory layer react chemically.

Für eine solche chemische Reaktion kann beispielsweise als starre Zwangsschicht eine keramische Platte verwendet werden, die Al2O3 enthält. Als Sinterhilfsmittel in der obersten Schicht des Schichtstapels kann ein Glas verwendet werden, das SiO2 und Kalzium enthält. Ein solches Glas kann bei einer Temperatur von 900°C mit dem Al2O3 der Zwangsschicht eine chemische Verbindung namens Anorthit (CaAl2Si2O8) bilden. Dadurch entsteht zwischen der obersten Schicht des Schichtstapels und der Zwangsschicht eine Reaktionsschicht, die eine feste Anbindung der Zwangsschicht an die obersten Schicht des Schichtstapels bewerkstelligt. For such a chemical reaction, a ceramic plate containing Al 2 O 3 can be used, for example, as a rigid constraint layer. A glass which contains SiO 2 and calcium can be used as the sintering aid in the uppermost layer of the layer stack. Such a glass can form a chemical compound called anorthite (CaAl 2 Si 2 O 8 ) at a temperature of 900 ° C with the Al 2 O 3 of the constraint layer. This creates a reaction layer between the top layer of the layer stack and the constraint layer, which brings about a firm connection of the constraint layer to the top layer of the layer stack.

Insbesondere kann als Zwangsschicht eine keramische Platte verwendet werden, die Al2O3 enthält und die frei von Sinterhilfsmitteln ist. Eine solche keramische Platte kann durch Sintern bei Temperaturen von 1500°C hergestellt werden. Diese hohe Sintertemperatur stellt sicher, daß die Zwangsschicht während des Sinterns des Schichtstapels bei Temperaturen > 1000°C keiner Schrumpfung mehr unterliegt. In particular, a ceramic plate which contains Al 2 O 3 and which is free of sintering aids can be used as the constraining layer. Such a ceramic plate can be produced by sintering at temperatures of 1500 ° C. This high sintering temperature ensures that the forced layer is no longer subject to shrinkage during the sintering of the layer stack at temperatures> 1000 ° C.

Daneben ist es vorteilhaft, wenn das Eindringen des Sinterhilfsmittels in Poren der Zwangsschicht und die chemische Reaktion des Sinterhilfsmittels mit Bestandteilen der Zwangsschicht durch entsprechende Materialauswahl miteinander kombiniert wird. Dadurch wird eine besonders feste Anbindung der Zwangsschicht an die oberste Schicht des Schichtstapels bewerkstelligt. In addition, it is advantageous if the penetration of the Sintering aids in the pores of the constraint layer and the chemical Reaction of the sintering aid with components of the Compulsory layer through appropriate material selection with each other is combined. This ensures a particularly firm connection to the Forced layer to the top layer of the layer stack accomplished.

In einer vorteilhaften Ausführungsform der Erfindung kann eine Zwangsschicht verwendet werden, die eine Dicke zwischen 0,5 mm und 1,5 mm aufweist. Die Zwangsschicht muß dabei eine gewisse Mindestdicke aufweisen, um insbesondere für großflächige Sinterkörper eine ausreichende mechanische Stabilität aufzuweisen. Darüber hinaus darf die Zwangsschicht aber nicht zu dick sein, da ansonsten das Entfernen der Zwangsschicht zu aufwendig wird. In an advantageous embodiment of the invention a constraint layer can be used that has a thickness between 0.5 mm and 1.5 mm. The constraint must be one have certain minimum thickness, in particular for Large-scale sintered bodies have sufficient mechanical stability exhibit. Beyond that, the compulsory shift must not be too thick, otherwise the removal of the constraint layer too becomes complex.

Die Zwangsschicht kann beispielsweise Körner aus Al2O3 enthalten, die miteinander versintert sind. The constraining layer can contain grains of Al 2 O 3 , for example, which are sintered together.

Die Schichten des Schichtstapels können als keramische Feststoff-Komponente Bariumtitanat, Kalziumtitanat, Strontiumtitanat, Bleititanat, CaZrO3, BaZrO3, BaSnO3, Metallcarbide wie Siliziumcarbid, Metallnitride wie Aluminiumnitrid, Mineralien wie Molit und Kyanit, Zirkoniumdioxid oder auch verschiedene Arten von Siliziumdioxid enthalten. Selbst Gläser mit hohem Erweichungspunkt können als die keramische Komponente verwendet werden, vorausgesetzt, daß sie ausreichend hohe Erweichungspunkte haben. Weiterhin können Mischungen derartiger Materialien für die keramische Feststoff-Komponente der Schichten des Schichtstapels verwendet werden. The layers of the layer stack can contain barium titanate, calcium titanate, strontium titanate, lead titanate, CaZrO 3 , BaZrO 3 , BaSnO 3 , metal carbides such as silicon carbide, metal nitrides such as aluminum nitride, minerals such as molite and kyanite, zirconium dioxide or also various types of silicon dioxide as a ceramic solid component. Even glasses with a high softening point can be used as the ceramic component, provided that they have sufficiently high softening points. Mixtures of such materials can also be used for the ceramic solid component of the layers of the layer stack.

Die Verwendung des erfindungsgemäßen Verfahrens zur Herstellung von keramischen Substraten ermöglicht insbesondere die Verwendung von Schichtstapeln, die die Form einer Platte aufweisen, wobei die Platte eine Grundfläche von wenigstens 18 cm × 18 cm und eine Höhe von 0,5 bis 3 mm aufweist. Mittels einer solchen Platte können in einem einzigen Herstellungsschritt ein großflächiges, oder durch nachfolgendes Zerteilen des großflächigen Substrates, eine Vielzahl von kleinen Substraten hergestellt werden. The use of the inventive method for The production of ceramic substrates enables in particular the Using layered stacks that are shaped like a plate have, the plate has a base of at least 18 cm × 18 cm and a height of 0.5 to 3 mm. through such a plate can be in a single Manufacturing step a large area, or by subsequent cutting of the large-area substrate, a variety of small Substrates are produced.

Es ist darüber hinaus besonders vorteilhaft, wenn das Sintern des Schichtstapels bei einer Temperatur von weniger als 1000°C erfolgt, da in diesem Fall ein LTCC-Sinterprozeß vorliegt, der die Verwendung von Silber-Verbindungen für Leiterstrukturen im Innern des Substrats ermöglicht, was zu niedrigeren Verlusten innerhalb des Bauelements führt. Die Verwendung von Silber hat darüber hinaus den Vorteil, daß es im Gegensatz zu den bei höheren Sintertemperaturen erforderlichen Platin leichter und billiger verfügbar ist. It is also particularly advantageous if the sintering of the layer stack at a temperature of less than 1000 ° C, because in this case an LTCC sintering process is present, the use of silver compounds for Conductor structures inside the substrate allow what to leads to lower losses within the component. The The use of silver also has the advantage that it is used in Contrary to those required at higher sintering temperatures Platinum is available lighter and cheaper.

Das Entfernen der Zwangsschicht im Anschluß an das Sintern des Stapels kann beispielsweise durch Absputtern oder Sandstrahlen erfolgen. Removing the constraint layer after sintering the stack can, for example, by sputtering or Sandblasting is done.

Es ist desweiteren vorteilhaft, wenn zusätzlich zur Oberseite des Schichtstapels auch auf der Unterseite des Schichtstapels eine Zwangsschicht auf der Oberfläche der untersten Schicht des Schichtstapels angeordnet wird. Dadurch kann das Schrumpfen der Schichten des Schichtstapels von zwei Seiten her vermindert werden, was insgesamt eine noch geringere Schrumpfung zur Folge hat. It is also advantageous if in addition to the top of the layer stack also on the underside of the layer stack a constraint layer on the surface of the bottom layer of the layer stack is arranged. This can do that Shrinking the layers of the layer stack from two sides can be reduced, resulting in an even lower shrinkage has the consequence.

Es kommt insbesondere in Betracht, als Stapel einen Schichtstapel zu verwenden, bei dem zwischen zwei Schichten Leiterbahnen angeordnet sind. Diese Leiterbahnen können verwendet werden zur Herstellung einer Verdrahtung zwischen auf der Oberfläche des Keramiksubstrats angeordneten aktiven Bauelementen und im Innern des Keramiksubstrats angeordneten passiven Bauelementen. Die Leiterbahnen beziehungsweise elektrisch leitenden Flächen zwischen zwei Schichten des Schichtstapels können auch dazu verwendet werden, passive Bauelemente, beispielsweise Kondensatoren oder Spulen zu realisieren. It is particularly useful as a stack Layer stack to use where between two layers Conductor tracks are arranged. These traces can be used are used to make wiring between on the Surface of the ceramic substrate arranged active Components and arranged in the interior of the ceramic substrate passive components. The conductor tracks respectively electrically conductive surfaces between two layers of the Layer stacks can also be used passive Realize components, such as capacitors or coils.

Um die zwischen den Schichten angeordneten Leiterbahnen miteinander zu kontaktieren, ist es vorteilhaft, wenn eine Schicht im Stapel eine Durchführung enthält, die elektrisch leitfähig ist und die auf zwei verschiedenen Seiten der Schicht angeordnete Leiterbahnen miteinander verbindet. Around the conductor tracks arranged between the layers to contact each other, it is advantageous if a Layer in the stack contains a feedthrough that is electrical is conductive and on two different sides of the Layer interconnects interconnects.

Im folgenden wird die Erfindung anhand von Ausführungsbeispielen und den dazugehörigen Figuren näher erläutert. In the following the invention based on Exemplary embodiments and the associated figures explained in more detail.

Fig. 1 zeigt beispielhaft ein keramisches Substrat während seiner Herstellung nach dem erfindungsgemäßen Verfahren in einem schematischen Querschnitt. Fig. 1 shows an example of a ceramic substrate during its production process of the invention in a schematic cross-section.

Die Fig. 2 und 3 zeigen ein keramisches Substrat hergestellt nach dem erfindungsgemäßen Verfahren nach dem Sintern, einmal mit zwei Zwangsschichten, jeweils eine davon auf der Unterseite und eine auf der Oberseite (Fig. 2), und einmal mit nur einer Zwangsschicht auf der Oberseite des Substrats ( Fig. 3). Figs. 2 and 3 show a ceramic substrate produced by the process of the invention after sintering, one with two constraint layers, each one of them on the bottom and on the top (Fig. 2), and once with only a constraining layer on the top of the substrate ( Fig. 3).

Fig. 4 zeigt ein LTCC-Substrat in einem schematischen Querschnitt, hergestellt mit dem erfindungsgemäßen Verfahren. Fig. 4 shows a LTCC substrate, in a schematic cross-section, produced using the inventive method.

Fig. 1 zeigt einen Grundkörper 2 mit einem Stapel 2a von übereinanderliegenden Schichten 3. Die Schichten 3 enthalten ein ungesintertes Keramikmaterial. Im allgemeinen enthalten die Schichten 3 des Schichtstapels 2a neben dem Keramikmaterial und dem Sinterhilfsmittel 5 noch ein Bindemittel, das den Schichten 3, die üblicherweise als Grünfolien (englisch: Green Tapes) vorliegen, die zur Verarbeitung notwendige Geschmeidigkeit verleiht. Die Oberfläche 13 der untersten Schicht 14 des Stapels 2a liegt direkt auf der zweiten starren Zwangsschicht 12 auf. Auf der Oberfläche 6 der obersten Schicht 7 des Stapels 2a liegt direkt die Zwangsschicht 4 auf. Die Zwangsschichten 4, 12 enthalten Körner 8 aus Al2O3 und weisen Poren 9 auf. Diese Poren 9 bilden Hohlräume, in die das Sinterhilfsmittel 5, das aus der obersten Schicht 7 beziehungsweise aus der untersten Schicht 14 des Schichtstapels 2a stammt, eindringen kann. Durch das in die Poren 9 eindringende Sinterhilfsmittel 5 wird eine Haftung der jeweiligen Zwangsschicht an dem Schichtstapel 2a vermittelt. Das Anbringen der Zwangsschichten 4, 12 an den Schichtstapel 2a kann vor oder auch nach dem Entbindern des Schichtstapels 2a erfolgen. In Richtung der Ausdehnung der Schichten 3 in lateraler Richtung des Stapels 2a kann somit das Schrumpfen während des Sinterns wirksam vermindert werden. Das Festhalten des Schichtstapels 2a in lateraler Richtung bewirkt, daß das Schrumpfen fast ausschließlich in vertikaler Richtung, also senkrecht zu den Flachseiten der Schichten 3 stattfindet. Dieser sogenannte "Schrumpf in z-Richtung" ist dabei um so stärker. Fig. 1 shows a basic body 2 with a pile 2 a of superposed layers 3. The layers 3 contain an unsintered ceramic material. In general, the layers 3 contain the layer stack 2 a in addition to the ceramic material and the sintering aid or a binder 5 that the layers 3, which are usually green sheets (English: Green tapes) imparts present, the time necessary for processing flexibility. The surface 13 of the bottom layer 14 of the stack 2 a lies directly on the second rigid layer 12 . On the surface 6 of the top layer 7 of the stack 2a is located directly on the constraining layer. 4 The constraining layers 4 , 12 contain grains 8 made of Al 2 O 3 and have pores 9 . These pores 9 form cavities into which the sintering aid 5 , which originates from the top layer 7 or from the bottom layer 14 of the layer stack 2 a, can penetrate. Adhesion of the respective constraining layer to the layer stack 2 a is imparted by the sintering aid 5 penetrating into the pores 9 . The application of the forced layers 4 , 12 to the layer stack 2 a can take place before or after the debinding of the layer stack 2 a. In the direction of expansion of the layers 3 in the lateral direction of the stack 2 can thus a shrinkage be effectively reduced during sintering. Holding the layer stack 2 a in the lateral direction causes the shrinking to take place almost exclusively in the vertical direction, that is to say perpendicular to the flat sides of the layers 3 . This so-called "shrinkage in the z direction" is all the stronger.

Die Fig. 2 und 3 zeigen jeweils einen Stapel 2a von übereinanderliegenden Schichten 3, wobei das keramische Substrat 1 bereits durch Sintern des Stapels 2a fast fertiggestellt ist. Der während des Sinterns auftretende Schrumpf der einzelnen Schichten 3 erzeugt die in Fig. 2 gezeigte gekrümmte Außenkontur des keramischen Substrats 1. Da sich gemäß Fig. 2 auf der Oberseite eine Zwangsschicht 4 und auf der Unterseite eine zweite Zwangsschicht 12 befindet, ist der maximale Schrumpf bei der Herstellung des Substrats 1 in der Region der mittleren Schichten 3 aufgetreten. Demgegenüber ist gemäß Fig. 3 die größte Veränderung der Außenkontur beziehungsweise das maximale Schrumpfen der das Substrat 1 bildenden Schichten 3 in dem Bereich der unteren Schichten aufgetreten, da in diesem Fall nur auf der Oberfläche der obersten Schicht 7 eine Zwangsschicht 4 angeordnet ist. Figs. 2 and 3 each show a stack 2 of a superposed layers 3, wherein the ceramic substrate 1 has already been completed by sintering of the stack 2 a chamfered. The shrinkage of the individual layers 3 that occurs during sintering produces the curved outer contour of the ceramic substrate 1 shown in FIG. 2. As is shown in FIG. 2 on the upper side of a forced layer 4 and on the bottom a second constraining layer 12, the maximum shrinkage has occurred in the production of the substrate 1 in the region of the middle layers 3. In contrast, according to FIG. 3, the biggest change of the outer contour or the maximum shrinkage of the substrate 1 forming layer 3 in the region of the lower layers occurred because a constraining layer 4 is disposed in this case only on the surface of the uppermost layer 7.

Die Fig. 2 und 3 zeigen, daß es vorteilhaft ist, sowohl auf der Oberseite als auch auf der Unterseite des Stapels 2a jeweils eine Zwangsschicht 4, 12 vorzusehen, da dadurch eine Veränderung der geometrischen Abmessungen des herzustellenden Substrats während des Sinterns am meisten vermindert werden kann. Figs. 2 and 3 show that it is advantageous, both on the top and on the bottom of the stack 2 a each having a constraining layer 4 to provide 12, as this of the product to the substrate decreases a change in geometric dimensions during the sintering most can be.

Fig. 4 zeigt ein mit dem erfindungsgemäßen Verfahren fertig hergestelltes keramisches Substrat 1, bei dem die Zwangsschichten bereits entfernt worden sind. Das Substrat 1 ist hergestellt aus einem Stapel 2a von übereinanderliegenden Schichten 3, die ein ungesintertes Keramikmaterial enthalten, wobei das ungesinterte Keramikmaterial durch Sintern in ein gesintertes Keramikmaterial übergeführt worden ist. Auf der Oberseite der obersten Schicht 3 des keramischen Substrats 1 sind Bauelemente 18, 19 angeordnet, wobei das erste Bauelemente 18 durch Drahtbonden und anschließendes Vergießen und das zweite Bauelement 19 durch Flip-Chip-Montage auf der Oberfläche des keramischen Substrats befestigt ist. Die beiden Bauelemente 18, 19 können beispielsweise keramische Mikrowellenfilter sein. Auf der Unterseite des keramischen Substrats 1 sind Metallisierungen 20 angeordnet, an denen das Substrat 1 auf eine Leiterplatte gelötet und mithin mit weiteren elektronischen Bauelementen elektrisch in Kontakt gebracht werden kann. Auch auf der Oberseite des Substrats 1 sind Metallisierungen 20 angeordnet, auf denen die Bauelemente 18, 19 befestigt werden können. Das Substrat 1 weist eine Höhe H von 1 mm auf. Die Zahl der Schichten 3 beträgt sechs. Fig. 4 shows a ready-made with the inventive process ceramic substrate 1 in which the constraining layers have already been removed. The substrate 1 is made from a stack 2 a of layers 3 , one on top of the other, which contain an unsintered ceramic material, the unsintered ceramic material having been converted into a sintered ceramic material by sintering. Components 18 , 19 are arranged on the upper side of the uppermost layer 3 of the ceramic substrate 1 , the first component 18 being attached to the surface of the ceramic substrate by wire bonding and subsequent potting and the second component 19 by flip-chip mounting. The two components 18 , 19 can be ceramic microwave filters, for example. Metallizations 20 are arranged on the underside of the ceramic substrate 1 , on which the substrate 1 can be soldered to a printed circuit board and can thus be brought into electrical contact with further electronic components. Metallizations 20 are also arranged on the upper side of the substrate 1 , on which the components 18 , 19 can be attached. The substrate 1 has a height H of 1 mm. The number of layers 3 is six.

Im Innern des Substrats 1 befinden sich Verdrahtungsebenen, die durch Leiterbahnen 10 realisiert werden. Dabei befindet sich eine Verdrahtungsebene immer an der Grenzfläche zwischen zwei Schichten 3. Die Leiterbahnen 10 können beispielsweise durch eine silberhaltige Siebdruckpaste gebildet werden. Darüber hinaus weist eine Schicht 3 auch Durchführungen 11 auf, die auf zwei gegenüberliegenden Seiten der Schicht 3 liegende Leiterbahnen 10 miteinander kontaktiert. In den Durchführungen 11 sind elektrisch leitende Materialien angeordnet, die vorteilhafterweise die Durchführungen 11 auffüllen. In the interior of the substrate 1 there are wiring levels which are implemented by conductor tracks 10 . A wiring level is always at the interface between two layers 3 . The conductor tracks 10 can be formed, for example, by a screen printing paste containing silver. In addition, a layer 3 also has leadthroughs 11 which make contact with interconnects 10 on two opposite sides of layer 3 . In the through holes 11 are arranged electrically conductive materials that advantageously the bushings 11 fill.

Im oberen Bereich des Substrats 1 sind zwei der Schichten 3 als Schichten 15 mit hohem ∈ ausgebildet. Ein solches ∈ kann beispielsweise ∈ = 20 sein. Durch entsprechend ausgebildete Leiterbahnen 10 beziehungsweise elektrisch leitende Flächen 24 in den Verdrahtungsebenen können passive Komponenten wie Kondensatoren 17 in das Substrat 1 integriert sein. Gemäß Fig. 4 sind elektrisch leitende Flächen 24 an den Grenzschichten zwischen zwei Schichten 3 so angeordnet und durch Durchführungen 11 miteinander verbunden, daß ineinandergreifende Kammstrukturen, wie sie aus Vielschichtkondensatoren bekannt sind, entstehen. Durch das Aufdrucken einer Widerstandspaste 25 vor dem Verstapeln der Schichten 3 an der Grenzflächen zwischen den Schichten 3 können auch integrierte Widerstände als Passivkomponenten im Substrat 1 hergestellt werden. Durch Ausbilden von Leiterbahnen 10 in Form von spiralförmigen Bahnen und durch Aneinanderreihen von übereinander gestapelten spiralförmigen Bahnen können auch integrierte Spulen 16 in dem Substrat 1 hergestellt werden. In the upper region of the substrate 1 , two of the layers 3 are formed as layers 15 with a high ∈. Such a ∈ can be, for example, ∈ = 20. Passive components such as capacitors 17 can be integrated into the substrate 1 by means of appropriately designed conductor tracks 10 or electrically conductive surfaces 24 in the wiring levels. According to Fig. 4 conductive surfaces 24 are arranged at the boundary layers between two layers 3 and so connected by bushings 11 to each other, that interlocking comb structures as they are known from multilayer capacitors arise. By printing a resistance paste 25 before the layers 3 are stacked at the interfaces between the layers 3 , integrated resistors can also be produced as passive components in the substrate 1 . Integrated coils 16 can also be produced in the substrate 1 by forming conductor tracks 10 in the form of spiral tracks and by stringing together spiral tracks stacked one above the other.

Die dargestellte Erfindung wird vorzugsweise für Stapel 2a verwendet, die aus im wesentlichen entlang von Ebenen verlaufenden Schichten 3 hergestellt sind. Es ist jedoch auch denkbar, die Erfindung auf gekrümmte Substrate anzuwenden, wobei die Schichten 3 dann nicht entlang einer Ebene sondern entlang von gekrümmten Kurven verlaufen. The illustrated invention is preferably used for stacks 2 a, which are made of layers 3 running essentially along planes. However, it is also conceivable to apply the invention to curved substrates, the layers 3 then not running along a plane but along curved curves.

Claims (15)

1. Verfahren zur Herstellung eines keramischen Substrats (1) mit folgenden Schritten: a) Bereitstellen eines Grundkörpers (2) mit einem Stapel (2a) von übereinanderliegenden Schichten (3), die ein ungesintertes Keramikmaterial enthalten b) Anordnen einer starren Zwangsschicht (4) auf der Oberfläche (6) der obersten Schicht (7) des Stapels (2a) c) Befestigen der Zwangsschicht (4) auf der obersten Schicht (7) und Sintern des Stapels (2a) d) Entfernen der Zwangsschicht (4). 1. A method for producing a ceramic substrate ( 1 ) with the following steps: a) providing a base body ( 2 ) with a stack ( 2 a) of layers ( 3 ) lying one above the other, which contain an unsintered ceramic material b) arranging a rigid constraining layer ( 4 ) on the surface ( 6 ) of the uppermost layer ( 7 ) of the stack ( 2 a) c) attaching the constraining layer ( 4 ) to the top layer ( 7 ) and sintering the stack ( 2 a) d) removing the constraint layer ( 4 ). 2. Verfahren nach Anspruch 1, wobei das Sintern ohne das Einwirken äußerer Kräfte erfolgt. 2. The method according to claim 1, the sintering takes place without the action of external forces. 3. Verfahren nach einem der Ansprüche 1 oder 2, wobei die oberste Schicht (7) ein Sinterhilfsmittel (5) enthält, das während des Sinterns fließfähig wird. 3. The method according to any one of claims 1 or 2, wherein the top layer ( 7 ) contains a sintering aid ( 5 ) which becomes fluid during the sintering. 4. Verfahren nach Anspruch 3, wobei die Zwangsschicht (4) Poren (9) aufweist, in die das Sinterhilfsmittel (5) während des Sinterns eindringt. 4. The method according to claim 3, wherein the constraining layer ( 4 ) has pores ( 9 ) into which the sintering aid ( 5 ) penetrates during the sintering. 5. Verfahren nach einem der Ansprüche 3 oder 4, wobei das Sinterhilfsmittel (5) während des Sinterns mit Bestandteilen der Zwangsschicht (4) chemisch reagiert. 5. The method according to any one of claims 3 or 4, wherein the sintering aid ( 5 ) reacts chemically with components of the constraining layer ( 4 ) during sintering. 6. Verfahren nach einem der Ansprüche 1 bis 5, wobei die Zwangsschicht (4) Al2O3 enthält. 6. The method according to any one of claims 1 to 5, wherein the constraining layer ( 4 ) contains Al 2 O 3 . 7. Verfahren nach einem der Ansprüche 1 bis 6, wobei die Zwangsschicht (4) vor dem Sintern frei von einem Sinterhilfsmittel (5) ist. 7. The method according to any one of claims 1 to 6, wherein the constraining layer ( 4 ) before sintering is free of a sintering aid ( 5 ). 8. Verfahren nach einem der Ansprüche 1 bis 7, wobei die Zwangsschicht (4) eine Dicke aufweist, die zwischen 0,2 mm und 1,5 mm liegt. 8. The method according to any one of claims 1 to 7, wherein the constraining layer ( 4 ) has a thickness which is between 0.2 mm and 1.5 mm. 9. Verfahren nach einem der Ansprüche 1 bis 8, wobei das Sinterhilfsmittel (5) Glas enthält. 9. The method according to any one of claims 1 to 8, wherein the sintering aid ( 5 ) contains glass. 10. Verfahren nach einem der Ansprüche 1 bis 9, wobei zur Bildung des Stapels (2a) Schichten (3) verwendet werden, die als Keramikmaterial Al2O3 und als Sinterhilfsmittel Glas enthalten. 10. The method according to any one of claims 1 to 9, wherein layers ( 3 ) are used to form the stack ( 2 a), which contain Al 2 O 3 as the ceramic material and glass as the sintering aid. 11. Verfahren nach einem der Ansprüche 1 bis 10, wobei ein Stapel (2a) verwendet wird, der die Form einer Platte aufweist, wobei die Platte eine Grundfläche von wenigstens 18 cm × 18 cm und eine Höhe (H) von 0,5 bis 3 mm aufweist. 11. The method according to any one of claims 1 to 10, wherein a stack ( 2 a) is used which has the shape of a plate, the plate having a base area of at least 18 cm × 18 cm and a height (H) of 0.5 up to 3 mm. 12. Verfahren nach einem der Ansprüche 1 bis 11, wobei das Entfernen der Zwangsschicht (4) durch Sputtern oder Sandstrahlen erfolgt. 12. The method according to any one of claims 1 to 11, wherein the removal of the constraining layer ( 4 ) is carried out by sputtering or sandblasting. 13. Verfahren nach einem der Ansprüche 1 bis 12, wobei ein Stapel (2a) verwendet wird, bei dem zwischen zwei Schichten (3) Leiterbahnen (10) angeordnet sind. 13. The method according to any one of claims 1 to 12, wherein a stack ( 2 a) is used in which conductor tracks ( 10 ) are arranged between two layers ( 3 ). 14. Verfahren nach einem der Ansprüche 1 bis 13, wobei eine Schicht (3) eine elektrisch leitfähige Durchführung (11) enthält, die zwei auf verschiedenen Seiten der Schicht (3) angeordnete Leiterbahnen (10) miteinander verbindet. 14. The method according to any one of claims 1 to 13, wherein a layer ( 3 ) contains an electrically conductive feedthrough ( 11 ) which connects two interconnects ( 10 ) arranged on different sides of the layer ( 3 ). 15. Verfahren nach einem der Ansprüche 1 bis 14, wobei eine zweite starre Zwangsschicht (12) auf der Oberfläche (13) der untersten Schicht (14) des Stapels (2a) angeordnet wird. 15. The method according to any one of claims 1 to 14, wherein a second rigid constraining layer ( 12 ) on the surface ( 13 ) of the lowermost layer ( 14 ) of the stack ( 2 a) is arranged.
DE10145364A 2001-09-14 2001-09-14 Production of a ceramic substrate comprises preparing a base body having a stack of layers containing non-sintered ceramic material, arranging and fixing a rigid constrained layer to the uppermost layer of the stack, and removing Ceased DE10145364A1 (en)

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