DE10084382T1 - Process for controlling a melt and process for growing crystals - Google Patents

Process for controlling a melt and process for growing crystals

Info

Publication number
DE10084382T1
DE10084382T1 DE10084382T DE10084382T DE10084382T1 DE 10084382 T1 DE10084382 T1 DE 10084382T1 DE 10084382 T DE10084382 T DE 10084382T DE 10084382 T DE10084382 T DE 10084382T DE 10084382 T1 DE10084382 T1 DE 10084382T1
Authority
DE
Germany
Prior art keywords
melt
controlling
growing crystals
crystals
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10084382T
Other languages
German (de)
Inventor
Takeshi Azami
Shin Nakamura
Taketoshi Hibiya
Noriyasu Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT SPACE DEV TOKIO TOKYO
NEC Corp
Japan Space Forum
Original Assignee
NAT SPACE DEV TOKIO TOKYO
NEC Corp
Japan Space Forum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT SPACE DEV TOKIO TOKYO, NEC Corp, Japan Space Forum filed Critical NAT SPACE DEV TOKIO TOKYO
Publication of DE10084382T1 publication Critical patent/DE10084382T1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE10084382T 1999-03-24 2000-03-24 Process for controlling a melt and process for growing crystals Ceased DE10084382T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7925099 1999-03-24
PCT/JP2000/001820 WO2000056955A1 (en) 1999-03-24 2000-03-24 Method for controlling melt and method for growing crystal

Publications (1)

Publication Number Publication Date
DE10084382T1 true DE10084382T1 (en) 2002-03-07

Family

ID=13684620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10084382T Ceased DE10084382T1 (en) 1999-03-24 2000-03-24 Process for controlling a melt and process for growing crystals

Country Status (4)

Country Link
KR (1) KR20020002404A (en)
DE (1) DE10084382T1 (en)
TW (1) TW548350B (en)
WO (1) WO2000056955A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100414519B1 (en) * 2001-10-26 2004-01-13 학교법인 한양학원 method of growing rutile single crystal under high oxygen pressure
KR20030036989A (en) * 2001-11-01 2003-05-12 주식회사 실트론 Single crystal silicon ingot manufacturing system and method thereof
CN110261459A (en) * 2019-06-17 2019-09-20 北京科技大学 A kind of device for controlling extremely low oxygen content in atmosphere and measuring its partial pressure of oxygen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0782075A (en) * 1993-09-20 1995-03-28 Mitsubishi Heavy Ind Ltd Method for growing oxide single crystal
JPH07291783A (en) * 1994-04-21 1995-11-07 Sumitomo Metal Ind Ltd Silicon single crystal and production thereof
JPH08259380A (en) * 1995-03-23 1996-10-08 Nec Corp Growing method for silicon crystal

Also Published As

Publication number Publication date
TW548350B (en) 2003-08-21
KR20020002404A (en) 2002-01-09
WO2000056955A1 (en) 2000-09-28

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Legal Events

Date Code Title Description
8181 Inventor (new situation)

Free format text: AZAMI, TAKESHI, TOKIO/TOKYO, JP NAKAMURA, SHIN, TOKIO/TOKYO, JP HIBIYA, TAKETOSHI, TOKIO/TOKYO, JP

8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: C30B 13/28

8131 Rejection