DE10064865A1 - Production of nanowires used in the miniaturization of electronic components comprises growing wires by chemically reacting in a liquid solution to a specified length, and contacting one end to a solid body - Google Patents
Production of nanowires used in the miniaturization of electronic components comprises growing wires by chemically reacting in a liquid solution to a specified length, and contacting one end to a solid bodyInfo
- Publication number
- DE10064865A1 DE10064865A1 DE2000164865 DE10064865A DE10064865A1 DE 10064865 A1 DE10064865 A1 DE 10064865A1 DE 2000164865 DE2000164865 DE 2000164865 DE 10064865 A DE10064865 A DE 10064865A DE 10064865 A1 DE10064865 A1 DE 10064865A1
- Authority
- DE
- Germany
- Prior art keywords
- wires
- diameter
- solution
- wire
- liquid solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Im Rahmen der allgemeinen Miniaturisierung von elektronischen Bauelementen, treten, je weiter man in den Submikrometerbereich vorstößt, immer stärker Eigenschaften der betreffenden Bauteile auf, die sich zum Teil erheblich von denen des kompakten festen Körpers des gleichen Materials unterscheiden. Zur Anwendung kommen bisher Nanopartikel, die in drei Raumrichtungen Abmessungen im Nanometerbereich haben und dünne Schichten, deren Abmessungen in einer Raumrichtung im Nanometerbereich liegen.As part of the general miniaturization of electronic components, occur further into the submicrometer range, properties of the relevant components, which are sometimes significantly different from those of the compact solid body of the same material. So far, nanoparticles have been used, which are divided into three Spatial dimensions have dimensions in the nanometer range and thin layers whose Dimensions in a spatial direction are in the nanometer range.
Im Zuge der ständigen Bemühungen zur Verkleinerung elektronischer Bauelemente, z. B. für die Informationstechnologie nimmt auch der Bedarf an Drähten mit Dicken im Submikrometerbereich zu.In the course of constant efforts to downsize electronic components, e.g. B. for Information technology also takes up the need for wires with thicknesses Submicrometer range too.
So können z. B. bei Schaltkreisen unter 100 nm Verbindungsstellen in der Größenordnung. unter 50 nm erforderlich sein.So z. B. in circuits below 100 nm junctions in the order of magnitude. below 50 nm may be required.
Bisherige Verfahren zur Erzeugung von Nanodrähten bestehen darin, daß an Stufenversetzungen Metallatome angelagert werden, oder daß ultradünne Proteinfäden metallisiert werden.Previous methods for producing nanowires consist in that Step dislocations are attached to metal atoms, or that ultra-thin protein threads be metallized.
Dabei ist zu erwarten, daß die Spezifische Leitfähigkeit sich signifikant von der des massiven Drahtes unterscheidet. Neuartige Leitfähigkeitsmechanismen hat man beispielsweise aus Experimenten an Kohlenstoflnanotube-Drähten bereits gefunden.It can be expected that the specific conductivity differs significantly from that of the massive Wire is different. One has, for example, innovative conductivity mechanisms Experiments on carbon nanotube wires have already been found.
Ziel der Erfindung ist es annähernd eindimensionale metallische Körper zu schaffen, die sich aufgrund ihrer geringen Abmessungen in Bezug auf ihre spezifische Leitfähigkeit und elektrischen Eigenschaften deutlich von der des massiven Körpers aus dem gleichen Material unterscheiden.The aim of the invention is to create approximately one-dimensional metallic bodies that are due to their small dimensions in terms of their specific conductivity and electrical properties significantly different from that of the solid body made of the same material differ.
Erfindungsgemäß wird diese Aufgabe dadurch gelöst, daß durch eine chemische Reaktion von Metallionen in einer Lösung Keime gebildet werden, die im weiteren Verlauf der Reaktion zu Drähten anwachsen. Die sich bildenden metallischen Drähte weisen Durchmesser im Nanometerbereich auf und ein Verhältnis von Länge zu Durchmesser größer als 200.According to the invention this object is achieved in that a chemical reaction of Metal ions are formed in a solution germs, which further increase in the course of the reaction Growing wires. The forming metallic wires have a diameter in Nanometer range and a length to diameter ratio greater than 200.
Weitere Ziele der Erfindung sind die Anwendung dieser kleinen Drähte für eine elektrische Kontaktierung von elektronischen Bauelementen, so wie optoelektronischen Bauelementen. Ein Ausführungsbeispiel der Erfindung zur Herstellung von Nanodrähten, besteht darin, daß so viel Silbernitrat in einen Liter destilliertem Wasser gelöst wird, daß die Menge der Silberionen 7,5 mg beträgt. Anschließende wird hierin noch 30 mg Natriumcitrat aufgelöst und noch 1 ml einer 2% NH3-Lösung hinzugegeben. Darauf wird die Lösung so lange bei 100°C gekocht, bis eine Trübung einsetzt. Nach Abschluß der Reaktion befinden sich in der verbleibenden Flüssigkeit Drähte aus Silber mit einem Durchmesser um 20 nm und einer Länge von bis zu 1000 nm, zusätzlich werden dabei kugelähnliche Nanopartikel erzeugt.Further objects of the invention are the use of these small wires for electrical contacting of electronic components, such as optoelectronic components. An embodiment of the invention for the production of nanowires is that so much silver nitrate is dissolved in one liter of distilled water that the amount of silver ions is 7.5 mg. Then 30 mg of sodium citrate is dissolved in it and 1 ml of a 2% NH 3 solution is added. The solution is then boiled at 100 ° C. until turbidity sets in. After the reaction has ended, there are wires made of silver with a diameter of around 20 nm and a length of up to 1000 nm in the remaining liquid, in addition ball-like nanoparticles are produced.
Durch einen Filter können nun die Nanodrähte von den rundlichen Nanopartickeln separiet werden. Der Filtersatz, hauptsächlich bestehend aus Nanodrähten wird nun in Wasser eingebracht und die Flüssigkeit wieder bis zum sieden erhitzt. Durch langsames Zutropfen einer Silbernitratlösung und der entsprechenden Menge an Natrtiumcitrat, läßt man die Nanodrähte wachsen.The nanowires can now be separated from the rounded nanoparticles by a filter become. The filter set, consisting mainly of nanowires, is now in water introduced and the liquid heated to boiling again. By slowly dropping one Silver nitrate solution and the corresponding amount of sodium citrate, let the nanowires to grow.
Vorteilhaft für das Wachstum der Nanodrähte ist, die Konzentration der Metallione um die wachsenden Enden der Nanodrähte zu erhöhen. Dies geschieht Erfindungsgemäß dadurch, daß sich die Drähte in einem Elektrischen Feld befinden. Durch die Potentialdifferenz auf der Länge eines Drahtes wirkt das Ende des Drahtes, das dem Pluspol zugewandt ist stärker Anziehend auf die Metallione.An advantage for the growth of the nanowires is the concentration of the metal ions around the increasing growing ends of the nanowires. This happens according to the invention in that the wires are in an electrical field. Due to the potential difference on the length The end of a wire facing the positive pole of a wire is more attractive on the metal ions.
Besonders forteilhaft ist, wenn die Drahtenden elektrisch mit dem Minuspol einer Stromquelle kontaktiert sind. Am freien Ende des Nanodrahtes kann so unter Zuhilfenahme des elektrischen Stromes der Draht wachsen. It is particularly advantageous if the wire ends are electrically connected to the negative pole of a power source are contacted. At the free end of the nanowire, the electrical Stream of wire growing.
Da die Nanodrähte in einem Durchmesserbereich liegen, der wesentlich kleiner ist, als die Wellenlänge des Lichtes, können diese mit den üblichen Lichtmikroskopen im Auflicht oder Durchlicht nicht detektiert werden.Because the nanowires are in a diameter range that is significantly smaller than that Wavelength of light, this can be done with the usual light microscope in reflected light or Transmitted light cannot be detected.
Erfindungsgemäß erfolgt die Sichtbarmachung der Nanodrähte durch Streulicht. Als Ausführung hierzu werden die Nanodrähte Fig. 1; 4, die sich auf einem Objektträger 1 eines Lichtmikroskopes 2 befinden mit einer Dunkelfelddbeläuchtung 3 im Durchlicht betrachtet. Durch die seitliche Dunkelfeldbeläuchtung 3 geht vom Nonodraht 4 Streulicht 5 aus, was mit Hilfe eines Lichtmikroskopes 2 beobachtet wird. Dadurch kann der Nanodraht 4 mit Hilfe eines Drahthakens 6 der sich zwischen dem Objektiv des Lichtmikroskopes 2 und dem Objektträger 1 befindet, auf dem Objektträger verschoben werden.According to the invention, the nanowires are made visible by scattered light. As an embodiment of this, the nanowires Fig. 1; 4 , which are located on a slide 1 of a light microscope 2 with dark field illumination 3 viewed in transmitted light. Stray light 5 emanates from the nono wire 4 through the lateral dark field illumination 3 , which is observed with the aid of a light microscope 2 . As a result, the nanowire 4 can be moved on the slide with the aid of a wire hook 6 which is located between the objective of the light microscope 2 and the slide 1 .
Auch läßt sich ein Draht mit geringem Durchmesser als Leiter für Plasmonen nutzen.A wire with a small diameter can also be used as a conductor for plasmons.
Fallen auf einen metallischen Festkörper Photonen, so werden in diesem Plasmonen, erzeugt. Diese sind Anregungen der Elektronen in einem metallischen Festkörper, wobei sich diese Störung dann als Plasmonen fortpflanzen kann. Jedoch ist in massiven Festkörpern die Dämpfung für Plasmonen derartig groß, daß deren Reichweite praktisch gegen Null geht. Bekannt ist, daß je kleiner die Strukturen werden, desto geringer die Dämpfung für Plasmonen wird.If photons fall on a metallic solid, plasmons are generated in it. These are excitations of the electrons in a metallic solid Disorder can then propagate as plasmons. However, in solid solids it is Damping for plasmons is so great that their range is practically zero. It is known that the smaller the structures, the lower the attenuation for plasmons becomes.
Durch die Erfindung soll die Aufgabe gelöst werden, Strukturen zu schaffen, die es erlauben Plasmonen zu leiten.The object of the invention is to create structures that allow it To conduct plasmons.
Erfindungsgemäß wird dies dadurch gelöst, daß für die Plasmonenleitung ein Nanodraht verwendet wird. Vorteilhaft sollte dieser Draht frei sein, oder zumindest nur von einem Nichtleiter umgeben sein.According to the invention, this is achieved in that a nanowire is used for the plasmon conduction is used. This wire should advantageously be free, or at least only one Be surrounded by non-conductors.
Ein Ausführungsbeispiel um Plasmonen zu leiten, besteht darin, daß hierzu ein Nanodraht mit anregungsbereich und Austritsbereich und einem Mittel zur Anregung eines Plasmons versehen wird.An exemplary embodiment for guiding plasmons is that a nanowire is used for this excitation area and exit area and a means for excitation of a plasmon becomes.
Ein Nanodraht Fig. 2; 1 wird an seinem Ende 2 mit Laserlicht 3 bestrahlt. Hierdurch werden Plasmonen im Nanodraht 1 erzeugt, die sich aufgrund der geringen Dämpfung im Nanodraht bis zu seinem anderen Ende fortpflanzen und hier wieder Photonen, die abgestrahlt werden, erzeugt. Diese Photonen werden mit herkömmlichen Mitteln detektiert.A nanowire Fig. 2; 1 is irradiated with laser light 3 at its end 2 . As a result, plasmons are generated in the nanowire 1 , which propagate to the other end due to the low attenuation in the nanowire and again generate photons that are emitted. These photons are detected using conventional means.
Claims (25)
befindet7. The method according to claim 1 and 2 and 3, characterized in that there is a molecular unit in during the deposition process
is
befindet.8. The method according to claim 1 and 2 and 3, characterized in that there is a molecular unit during the deposition process
located.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000164865 DE10064865A1 (en) | 2000-12-25 | 2000-12-25 | Production of nanowires used in the miniaturization of electronic components comprises growing wires by chemically reacting in a liquid solution to a specified length, and contacting one end to a solid body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000164865 DE10064865A1 (en) | 2000-12-25 | 2000-12-25 | Production of nanowires used in the miniaturization of electronic components comprises growing wires by chemically reacting in a liquid solution to a specified length, and contacting one end to a solid body |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10064865A1 true DE10064865A1 (en) | 2002-07-04 |
Family
ID=7668870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2000164865 Ceased DE10064865A1 (en) | 2000-12-25 | 2000-12-25 | Production of nanowires used in the miniaturization of electronic components comprises growing wires by chemically reacting in a liquid solution to a specified length, and contacting one end to a solid body |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE10064865A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7303723B2 (en) | 2002-10-04 | 2007-12-04 | The Ohio State University Research Foundation | Method of forming nanostructures on ceramics |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4244354C2 (en) * | 1991-12-28 | 1995-06-14 | Hidefumi Hirai | Process for producing a non-aqueous dispersion of particles of a metal and / or a metal compound |
DE10013013A1 (en) * | 1999-03-29 | 2000-10-26 | Hewlett Packard Co | Chemical synthesized components, intersects pair of crossing conductors which form crossing which has function for measurement in nanometer range |
-
2000
- 2000-12-25 DE DE2000164865 patent/DE10064865A1/en not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4244354C2 (en) * | 1991-12-28 | 1995-06-14 | Hidefumi Hirai | Process for producing a non-aqueous dispersion of particles of a metal and / or a metal compound |
DE10013013A1 (en) * | 1999-03-29 | 2000-10-26 | Hewlett Packard Co | Chemical synthesized components, intersects pair of crossing conductors which form crossing which has function for measurement in nanometer range |
Non-Patent Citations (2)
Title |
---|
Dickson R.M * |
Unidirectional plama propagartion in metallic nano wives. J.Phys. Chem. B. July 2000, Vol. 104, Nr. 26, S. 6095-98 (abstract) INSPE online (rech. am 19.,07. in EPOQUE) * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7303723B2 (en) | 2002-10-04 | 2007-12-04 | The Ohio State University Research Foundation | Method of forming nanostructures on ceramics |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60211685T2 (en) | Process for binding hydrophilic substances to hydrophilic macromolecules and immobilizing them on hydrophobic surfaces | |
DE68925106T2 (en) | Tunnel unit and scanning head for a tunnel scanning microscope | |
DE102008060644A1 (en) | Production of a Graphanenanovorrichtung | |
DE112004001958T5 (en) | Method for sorting carbon nanotubes | |
DE2659604A1 (en) | SUBSTRATE FOR MINIATURIZED CIRCUIT DEVICES AND METHOD FOR MANUFACTURING SUCH DEVICES | |
EP2931937B1 (en) | Method of producing metal-nanoparticle-arrays | |
DE102011081603A1 (en) | Adaptive mirror, particularly for microlithographic projection exposure apparatus, for certain wavelengths, has substrate, electrical leads, electrically insulating insulation layer, and array of control electrodes | |
EP2936628B1 (en) | Individual photon source suitable for mass production and production method | |
DE202005014856U1 (en) | Opto-electronic component for controlling tunnel electron streams comprises a photonic crystal having a defect mode in its photonic band gap for photons with an energy such that electron transitions are induced | |
DE10064865A1 (en) | Production of nanowires used in the miniaturization of electronic components comprises growing wires by chemically reacting in a liquid solution to a specified length, and contacting one end to a solid body | |
DE102019107355A1 (en) | Tool-free contacting of an electrical conductor | |
DE4329985C2 (en) | Probe for near-field optical microscopy | |
DE4106548A1 (en) | Wire probe as sub-microscopic transceiver EM radiation - is of length one or more times wavelength of light used with curved spike at one end and leading to light conductive structure at other end | |
DE10064456B4 (en) | Process for the maskless formation of metal nanostructures in thin dielectric layers by means of irradiation with ultra-short laser pulses | |
DE102006020727B4 (en) | Sampling arm for near-field optical microscopy | |
DE102015115878B4 (en) | A method of treating a metallic surface and bodies having a treated metallic surface | |
DE102008052580A1 (en) | Element for generating ions and / or for light emission | |
DE112022001009T5 (en) | Method for producing a composite based on laser irradiation and composite | |
DE102015118779A1 (en) | Electric contact | |
Mamiyev | Plasmonic excitations and coupling in atomic wires | |
DE202010013458U1 (en) | Probe for apertureless near-field microscopy and / or Raman spectroscopy | |
EP3233718B1 (en) | Method for producing a substrate structured by nanowires, produced substrate, and use of the substrate | |
DE10355599A1 (en) | Method of forming a polarization grating for polarization of electromagnetic beams in a lithographic exposure device using a matrix material of needle shaped particles of conductive material | |
DE10001007A1 (en) | Lighting body for incandescent lamp is double helix with two connections at one end; diameter of double helix and pitch of its windings increase steadily towards the connections | |
Graf | Self-Assembly of semiconductor nanoplatelets into stacks for applications in nanoelectronics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |