DE10057163A1 - Method of manufacturing semiconductor chips with Schottky transitions by applying a metal contact direct to the p doped inner zone - Google Patents

Abstract

The manufacturing method forms a chip with a Schottky transition in an insulated zone of a p-doped semiconductor substrate. The method involves generating an n-doped channel in a p-doped semiconductor substrate, whose edge zone extends to the surface of the substrate. Further, the n-doped and/or p-doped zones forming the structure of the semiconductor are formed in the p-doped inner zone enclosed by the n-doped channel, and/or in the edge zone of the n-doped channel. The metal contacts which form the terminals of the chip are applied direct to the n and/or p doped zones in the inner zone and/or the edge zone. A metal contact is applied direct to the p-doped inner zone to form the Schottky transition.

Description

The invention relates to a method for producing semiconductor components with Schottky junctions in an isolated zone of a p-doped The semiconductor substrate.

Various are used to produce pn junctions in semiconductor components Processes known to include diffusion, epitaxy and ion implantation counting. A brief overview of the diverse manufacturing processes of Bipolartransistoen is in the article "Advances in Bipolar VLSI" by George R. Wilson in Proceedings of the IEEE, Vol. 78, No. 11, 1990, pp. 1707-1719 specified.

WO 00/19503 describes a process for the production of Semiconductor components in isolated zones of a p-doped semiconductor substrate. In the known method, one is first applied to the semiconductor substrate Mask applied with a window bounded by a peripheral edge becomes. Subsequently, an n-doped well is placed in the semiconductor substrate Generated ion implantation with an energy sufficient that at the Surface of the semiconductor substrate remains a p-doped inner zone, the Edge zone of the n-doped well up to the surface of the semiconductor substrate enough. Then the others become the structure of the semiconductor device forming n-doped and / or p-doped zones in the p-doped inner zone of the Semiconductor substrate introduced.

Metal-semiconductor junctions are generally known in semiconductor technology also called Schottky contacts. Such a Schottky  Contact is made, for example, by the well-known Schottky diodes, the are characterized by short switching times and low threshold voltages.

It is well known that Schottky diodes are used to reduce the Switching times of transistors are used. For this, the diodes on the one hand with the base and on the other hand with the collector of the transistor connected.

The known methods for producing integrable Semiconductor components that have Schottky transitions set different process steps ahead, the diffusions and implantations include to create lightly doped areas.

The invention has for its object a simplified method for Manufacture of semiconductor devices with Schottky transitions to specify.

This object is achieved according to the invention with the in claim 1 specified features.

In the method according to the invention, the isolated zone is separated by an n- doped well created in a p-doped semiconductor substrate, the Edge zone extends to the surface of the semiconductor substrate. The the Semiconductor component-forming n-doped and / or p-doped zones are in the p-doped inner zone enclosed by the n-doped well and / or in the edge zone of the n-doped heat.

The Schottky junction is now created by p-doping A metal contact is applied directly to the inner zone of the n-doped well. On The p-doped inner zone can also be applied to multiple metal contacts to create multiple Schottky transitions.  

The formation of the above semiconductor structure allows semiconductor devices different types together with Schottky transitions without further implantation or diffusion steps are required.

The n-doped well can be used without further diffusion steps High-volume implantation in the preferably weakly p-doped Semiconductor substrate are generated. The ion implantation is done with a Energy that is sufficiently high so that on the surface of the semiconductor substrate a p-doped inner zone remains.

However, it is also possible to carry out an ion implantation with an energy which is not so high that a p-doped on the surface of the semiconductor substrate Inner zone, but a weakly n-doped inner zone remains. In this case can the p-doped inner zone be generated by the backscattered Ions can be compensated with p-doped substances.

Starting from the above semiconductor structure, a Schottky diode can be used as discrete component and an NPN or PNP transistor and a Field effect transistor with Schottky junction as a gate with little effort be created.

To produce a Schottky diode, a p- doped zone with a stronger doping than that of the inner zone to which a metal contact forming a connection of the Schottky diode is applied becomes. The metal contact applied directly to the p-doped inner zone forms then the other connection of the Schottky diode.

The processes for the production of NPN or PNP transistors stand out characterized in that one of the metal contacts, which is a connection of the NPN or PNP transistor forms one of the p-doped or n-doped zones on the one hand and on the other hand touches the p-doped inner zone. The manufacture of the Schottky Contact is only possible by changing the mask for the  Application of the metal contact is used. Further procedural steps are however not required.

In the case of the NPN transistor, the one that forms the collector terminal extends Metal contact from the n-doped well to the p-doped inner zone while the PNP transistor, the metal contact forming the base connection of the n-doped zone enclosed by the p-doped inner zone right into the Inner zone extends.

In addition to the NPN and PNP transistors, starting from the above Semiconductor structure a Schottky transition easy even with field effect transistors be produced that allows control of the field effect transistor.

The generation of the n-doped and / or p-doped zones in the Semiconductor substrate can be done with the known process steps. The zones close to the surface are advantageously removed by means of Ion implantations introduced.

The areas in which ions are to be implanted can be identified with the known masking processes can be defined. The mask material can be made from Photoresist, metal, glass or other materials exist. Preferably the structure of the zones to be doped created by lithographic methods. Combinations of lithographs and etching are also possible.

For the ohmic contact of the connections, further n-doped and / or p- doped transition zones with a stronger doping in the semiconductor substrate be introduced.

Starting from the above semiconductor structure, logic gates can also be easily created produce without further implantations or diffusions are required. The base connections of these logic gates are created by metal contacts,  which are applied directly to the inner zone of the n-doped well and form a Schottky transition together with the bath.

The following are several exemplary embodiments of the method Manufacture of semiconductor devices with a Schottky junction below Reference to the drawings explained in more detail.

Show it:

FIG. 1a to 1e, the process steps for producing a Schottky barrier diode, starting from a p-doped semiconductor substrate with an n-doped well, the edge of which zone extends to the surface of the substrate,

FIGS. 2a to 2f, the steps for the production of an NPN transistor with a Schottky junction,

Fig. 2g the equivalent circuit diagram of the NPN transistor with Schottky diode of FIGS. 2a to 2f,

Fig. 3a to 3f, the steps for manufacturing a PNP transistor with a Schottky junction,

Fig. 3g, the equivalent circuit of the PNP transistor with Schottky diode of Figs. 3a to 3f,

FIG. 4a to 4g, the steps of manufacturing a field effect transistor, whose control takes place via a Schottky junction,

Fig. 5A to 5G, the steps for making another embodiment of a field effect transistor, whose control takes place via a Schottky junction,

Figs. 6a to 6d, the steps for producing a non inversely operated logic gate with multiple inputs that have Schottky diodes,

Fig. 6e the equivalent circuit diagram of the logic gate from the FIG. 6a to 6d,

Fig. 7a to 7f, the steps for producing a non-inversely operated injector port logic gate with multiple inputs and having Schottky diodes,

Fig. 7g, the equivalent circuit of the logic gate of Figs. 7a to 7f,

FIG. 8a to 8f the steps for producing an inversely operated logic gate with multiple inputs that have Schottky diodes, and

FIG. 8e, the equivalent circuit of the logic gate of FIGS. 8a to 8f,

The manufacture of the different construction manager elements with Schottky transitions requires the semiconductor structure shown in FIG. 1a. The method for producing this semiconductor structure is described in DE-A-198 44 531 and WO 00/19503, to which express reference is made.

A mask 2 is applied to a weakly p-doped semiconductor substrate 1 (wafer), which has a window 3 which is delimited by a peripheral edge 4 . For the base material, a wafer of weakly p-doped monocrystalline silicon with a resistance of z. B. 5 ohm cm used. Other suitable semiconductor materials are e.g. B. GaAs and SiC with the suitable dopants for these substances. The mask material can consist of photoresist, metal, glass or other materials. The structure is preferably created by photolithographic processes. After the mask has been created, doping, preferably implantation of phosphorus ions with a dose of e.g. B. 2 × 10 ³ atoms / cm ² to create an n-doped well 5 in the semiconductor substrate 1 . The implantation energy is so high that above the well 5, a p in the semiconductor substrate 1 ^- remains doped zone -. At a dose of 2 × 10 ³ atoms / cm ² , this is the case despite the backscattered phosphorus ions, for example, when the implantation energy is 6 MeV or more.

In the case of high-volume implantation, there is a special effect in the area of the edge 4 of the mask window 3 . Since ions are scattered on the vertical edge or braked to different extents on inclined edges, an upwardly drawn edge zone 6 is formed in the tub 5 , which extends to the surface of the semiconductor substrate 1 and the remaining p ^- -doped inner zone 7 encloses on the surface of the semiconductor substrate. Starting from the above semiconductor structure, various semiconductor components with Schottky transitions can now be produced, which are described below.

FIG. 1a to 1e illustrate the steps for manufacturing a Schottky barrier diode. In the p-doped inner zone 7 enclosed by the n-doped well 5 , a central, for example rectangular or round p ⁺ -doped zone 8 with a doping is introduced by means of ion implantation, which is stronger than that of the semiconductor substrate ( FIG. 1b). A near-surface, circumferential n ⁺ -doped transition zone 9 is then introduced into the edge zone 6 of the heat 5 by means of ion implantation ( FIG. 1c). Appropriate masks are used for this.

After application of an insulation layer into which the corresponding windows are etched ( FIG. 1d), a metal contact SC is directly on the p ^- -doped inner zone 7 , a metal contact C on the p ⁺ -doped zone 8 and a metal contact W on the n ⁺ -doped transition zone 9 applied ( Fig. 1e). The metal contact SC applied directly to the inner zone 7 and the metal contact C applied to the p ⁺ -doped zone 8 form the two connections of the Schottky diode.

The manufacture of an NPN transistor is again based on the same semiconductor structure as the manufacture of the Schottky diode ( FIG. 2a). A central p-doped zone 10 with a conventional doping (N _A = 10 ¹⁸ cm ^-3 ), which is stronger than that of the semiconductor substrate 1 ( FIG. 2b), is introduced into the p ^- -doped inner zone 7 by means of ion implantation. Subsequently, a circumferential, near-surface n ⁺ transition zone 11 with the usual doping concentration (N _D ≈ 10 ²² cm ^-3 ) into the edge zone 6 of the tub 5 and a near-surface n ⁺ - doped zone 12 (N _D = 10 ²² cm ^-3 ) into the p ^- - doped zone 10 enclosed by the inner zone 7 ( FIG. 2c). In a further implantation step, a p ⁺ -doped transition zone 13 (N _D = 10 ²² cm ^-3 ) near the surface is then introduced into the p-doped zone 10 ( FIG. 2d). Finally, the metal contacts C, E, B forming the connections of the NPN transistor are applied to the n ⁺ and p ⁺ zones 11 , 12 , 13 according to the known methods (see GR Wilson). The n-doped well 5 together with the transition zone 11 then forms the collector C, the n ⁺ -doped zone 12 the emitter E and the p ^- -doped inner zone 7 together with the p ⁺ -doped zone 13 the base B of the NPN- transistor.

The Schottky junction SC is created in that the metal contact C forming the collector of the NPN transistor extends from the n ⁺ -doped transition zone 11 to the p ⁺ -doped inner zone 7 . For this purpose, it is only necessary to provide a correspondingly wide window 14 in the insulation layer. However, no further procedural steps are necessary. Since the Schottky junction SC lies between the base B and the collector C of the NPN transistor and thus a deep saturation of the collector is prevented, the switching times of the transistor are reduced. The equivalent circuit diagram of the NPN transistor T together with the Schottky diode D is shown in FIG. 2g.

FIGS. 3a to 3f illustrate the steps for fabricating a PNP transistor. A central n-doped zone 15 (N _D = 10 ¹⁸ cm ^-3 ) is introduced into the p ^- -doped inner zone 7 ( FIG. 3a) ( FIG. 3b). Subsequently, a circumferential, near-surface n ⁺ transition zone 16 (N _D ≈ 10 ²² cm ^-3 ) into the peripheral zone 6 of the tub 5 and a near-surface n ⁺ transition zone 17 (N _D = 10 ²² cm ^-3 ) into the central n -doped zone 15 implanted ( Fig. 3c). In a further process step, a circumferential, near-surface p ⁺ -doped transition zone 18 (N _D = 10 ²² cm ^-3 ) into the inner zone 7 and a near-surface p ⁺ -doped zone 19 (N _D = 10 ²² cm ^-3 ) in the central n-doped zone 15 is introduced by means of ion implantation. The inner zone 7 now forms the collector C, the central n-doped zone 15 the base B and the p ⁺ -doped zone 19 the emitter E of the PNP transistor, the highly doped transition zones being provided to establish an ohmic connection to the transistor connections ( Fig. 3d). To make contact with the transistor connections, an insulation layer is applied to the semiconductor substrate, which is etched away in the region of the corresponding zones ( FIG. 3e). The metal contacts C, E, B and W for the transistor connections are then applied ( FIG. 3f). To produce the Schottky junction SC, the metal contact B forming the base of the PNP transistor is applied to the semiconductor substrate in such a way that the metal contact covers the n ⁺ transition zone 17 and extends into the inner zone 7 . All that is required for this is to apply an insulation layer to the semiconductor substrate which has a corresponding window 20 . The Schottky junction SC lies between the base B and the collector C of the PNP transistor. Fig. 3g shows the equivalent circuit of the PNP-transistor T together with the Schottky diode D.

FIGS. 4a to 4f illustrate the steps of manufacturing a field effect transistor with a Schottky junction. The manufacture is again based on the semiconductor structure shown in FIG. 1a. After applying a mask, a peripheral, near-surface n ⁺ transition zone 21 is introduced into the edge zone 6 of the trough 7 by means of ion implantation ( FIG. 4b). A p ⁺ transition zone 22 , 23 near the surface, which are opposite one another, is then implanted on both sides of the inner zone 7 ( FIG. 4c). After applying an appropriate insulation layer, the metal contacts for the connections of the field effect transistor are then applied to the semiconductor substrate ( FIG. 4d). The metal contact DRAIN forming the drain connection is applied to one of the two p ⁺ transition zones 22 and the metal contact SOURCE forming the source connection is applied to the other of the two p ⁺ transition zones 23 . Between the drain and source connection, another metal contact GATE is applied directly to the inner zone, which forms the gate connection. The metal contact GATE extends into the circumferential n ⁺ transition zone 21 and divides the inner zone into two areas, the drain connection being in one area and the source connection in the other area (FIGS . 4e and 4f). The metal contact GATE together with the inner zone 7 of the semiconductor substrate represents a Schottky junction, via which the field effect transistor can be controlled. The field effect transistor is characterized by a larger drain-source current compared to conventional field effect transistors. In addition, the threshold voltage for controlling the drain-source current is higher.

FIGS. 5a to 5f show the process steps for fabricating an alternate embodiment of a field effect transistor with a Schottky junction. First, a circumferential, near-surface n ⁺ transition zone 24 is again introduced into the edge zone 6 of the tub 7 ( FIGS. 5a to 5b). The p ⁺ junction zones 25 and 26 are then implanted in the p-doped inner zone 7 ( FIG. 5e). One of the two p ⁺ transition zones 25 and 26 forms the drain and the other of the two p ⁺ transition zones 26 and 25 forms the source of the field effect transistor or vice versa. In principle, it is also possible to provide a p ⁺ transition zone on both sides of the central p ⁺ transition zone 25 ( FIG. 5c).

After application of an appropriate insulation layer, the metal contact forming the source or drain connection SOURGE / DRAIN is applied to the central p ⁺ transition zone 25 and the metal contact forming the drain or source connection DRAIN / SOURCE of the field effect transistor is applied to the lateral p ⁺ transition zone 26 ( Fig. 5d). The field effect transistor is controlled via a metal contact which surrounds the central p ⁺ junction zone 25 and which is applied directly to the inner zone 7 and forms the gate connection GATE (FIGS . 5e and 5f). To do this, it is only necessary to provide a corresponding window 27 in the insulation layer. A metal contact is also applied to the circumferential, n ⁺ transition zone 24 and connected to a suitable potential. The field effect transistor is distinguished in comparison to the field effect transistor according to FIGS. 5a to 5f by a higher transit frequency and a higher threshold voltage.

The order of the implantations is arbitrary and has only a small one Effects on the behavior of the elements. Implantations by the Contact openings of the insulator for self-adjustment and doping Polysilicon layers (polyemitters) are known to the person skilled in the art. The structure of the pn junctions can be made in a known manner through multiple implantations changed depth and dose in vertical and lateral profile become.

FIGS. 6a through 6d show the process steps for producing a non-inversely operated logic gate having three inputs, each having a Schottky diode. The production of the logic gate is again based on the semiconductor structure already described with reference to FIG. 1a ( FIG. 6a). After applying an appropriate mask, an n ⁺ -doped zone 28 is implanted in the p ^- -doped inner zone 7 and a near-surface, circumferential n ⁺ -doped transition zone 29 is implanted in the edge zone 6 of the n-doped well 5 ( FIG. 6b). An insulator with corresponding windows for the metal contacts of the logic gate is then applied ( FIG. 6c). The metal contact forming the collector connection C is applied to the n ⁺ transition zone 29 , the metal contact forming the emitter connection E is applied to the n ⁺ zone 28 and the metal contacts forming the base connections B1, B2, B3 are applied directly to the inner zone 7 . The metal contacts for the base connections form Schottky transitions SC ( Fig. 6d). FIG. 6e shows the equivalent circuit diagram of the logic gate with the three Schottky diodes D1 to D3 on the inputs B1, B2, B3.

FIGS. 7a to 7f show the process steps of an alternative embodiment of the non-inversely operated logic gate having a plurality of Schottky diodes having inputs. In contrast to the logic gate according to FIGS. 6a to 6e, this logic gate has an injector connection. This logic gate can also be easily manufactured starting from the semiconductor structure according to FIG. 1a.

First, after applying an appropriate mask, an n-doped zone 30 is implanted in the p ^- -doped inner zone 7 of the semiconductor substrate of FIG. 7a ( FIG. 7b). After applying appropriate masks, a near-surface, circumferential n ⁺ transition zone 31 is implanted into the edge zone 6 of the n-doped well 5 and an n ⁺ -doped transition zone 32 and a p ⁺ -doped zone 33 into the n-doped zone 30 ( Fig. 7c and 7d). Now the metal contacts for the connections of the logic gate are applied in the windows of a corresponding insulator ( FIGS. 7e and 7f). The metal contact C forming the collector connection is connected to the n ⁺ transition zone 31 , the metal contact forming the emitter connection E to the n ⁺ transition zone 32 , the metal contact forming the injector connection Inj to the p ⁺ zone 33 and the metal contacts B1, B2, B3 , which form the base of the logic gate, applied directly to the inner zone 7 . These metal contacts again form a Schottky junction SC together with the weakly doped inner zone. The logic gate is characterized by a very high gain. Fig. 7g shows the equivalent circuit diagram of the logic gate with the three Schottky diodes D1, D2, D3 at the inputs B1, B2, B3 and the injector port Inj.

FIGS. 8a to 8f show the process steps for the production of a logic gate with two inversely operated in each case a Schottky diode having inputs.

The manufacture is based again on the semiconductor structure according to FIG. 1a. An p ^- doped inner zone 7 of the semiconductor substrate of FIG. 8a is implanted with an n-doped zone 34 which extends into the edge zone 6 of the n-doped well 5 . In addition to the n-doped zone 34 , a further n-doped zone 35 is implanted in the inner zone 7 , but this does not extend into the edge zone of the trough ( FIG. 8b). In the edge zone 6 of the tub 5 there is now a near-surface, circumferential n ⁺ transition zone 36 , in the n-doped zone 35 which does not extend into the edge zone an n ⁺ -doped transition zone 37 and in the n- extending into the tub 5 doped zone 34 implanted with p ⁺ -doped zone 38 (FIGS . 8c and 8d). Corresponding masks are again applied to the semiconductor substrate for the implantation steps.

An insulator is then applied to the semiconductor substrate, which is exposed in the area of the connections of the logic gate ( FIG. 8e). Finally, the metal contacts for the connections of the logic gate are applied ( Fig. 8f). The metal contact forming the emitter connection E is connected to the circumferential n ⁺ zone 36 , the metal contact forming the injector connection Inj to the p ⁺ zone 38 , the metal contact forming the collector connection C to the n ⁺ zone 37 and the two form the base B1. B2 forming metal contacts applied to the inner zone 7 . These two metal contacts together with the weakly doped inner zone each again form a Schottky contact SC ( FIG. 8f). FIG. 8g shows the equivalent circuit diagram of the inversely operated logic gate with the Schottky diodes D1, D2 at the inputs B1, B2. Since the zones for the injector and emitter merge, the logic gate is characterized by its particularly small dimensions.

FIGS. 6 to 8 show logic gate with two or three inputs. The logic gates can also have more than three inputs. A large number of logic gates can be created in the isolated islands on a semiconductor substrate, each of which has a large number of inputs.

Claims (16)

1. Process for the production of semiconductor components with a Schottky junction in an isolated zone of a p-doped semiconductor substrate with the following process steps:
Producing an n-doped well in the p-doped semiconductor substrate, the edge zone of which extends to the surface of the semiconductor substrate,
Generating further n-doped and / or p-doped zones forming the structure of the semiconductor component in the p-doped inner zone enclosed by the n-doped trough and / or in the edge zone of the n-doped trough, and
Applying the metal contacts forming the connections of the semiconductor component directly to the n-doped and / or p-doped. Zones in the p-doped inner zone and / or in the edge zone of the n-doped well, and
Applying a metal contact directly to the p-doped inner zone to create the Schottky junction. 2. The method according to claim 1, characterized in that on the Semiconductor substrate a mask for defining one of a revolving Edge of limited window is applied, the n-doped well in the p-doped semiconductor substrate by ion implantation through the mask is generated with an energy that is so high that on the surface of the Semiconductor substrate remains the p-doped inner zone, the edge zone of the n-doped well extends to the surface of the semiconductor substrate. 3. The method according to claim 1 or 2, characterized in that for Creation of a Schottky diode in the p-doped inner zone a p-doped Zone with a stronger doping than that of the inner zone  the one metal contact forming a connection of the Schottky diode is applied, the one applied directly to the p-doped inner zone Metal contact forms the other connection of the Schottky diode. 4. The method according to claim 1 or 2, characterized in that for Creation of a semiconductor device together with a Schottky diode one of the metal contacts, which is a connection of the semiconductor component forms, is applied to the semiconductor substrate such that the Metal contact one of the p-doped or n-doped zones on the one hand and the p-doped inner zone on the other hand touches. 5. The method according to claim 4, characterized in that to create of an NPN transistor with a Schottky diode in the p-doped inner zone a p-doped zone enclosed by the inner zone with a stronger one Doping than that of the inner zone and an n-doped in the p-doped zone Zone are generated, with the p- enclosed by the inner zone doped zone a metal contact forming the base connection, onto which n- doped zone a metal contact forming the emitter connection and on the n- doped edge zone of the trough the collector terminal of the transistor Forming metal contact are applied, and that the Metal contact forming collector connection extending from the n-doped well extends into the inner zone. 6. The method according to claim 5, characterized in that in the n-doped Edge zone of the tub an n-doped transition zone with a stronger Doping than that of the tub and in the p-doped inner zone enclosed p-doped zone a p-doped transition zone with a stronger doping than that of the p-doped inner zone enclosed p-doped zone are generated. 7. The method according to claim 4, characterized in that to create of a PNP transistor with a Schottky diode in the p-doped inner zone  an n-doped zone enclosed by the p-doped inner zone and in of the n-doped zone, a p-doped zone can be generated, with reference to that of the n-doped zone enclosed in the inner zone forms the base connection forming metal contact, on the p-doped zone an emitter connection forming metal contact and on the inner zone a the collector connection of the Transistors forming metal contact are applied, and that the Metal contact forming the base connection extends from the n-doped zone into the Inner zone extends. 8. The method according to claim 7, characterized in that the emitter of Transistor-forming p-doped zone has a stronger doping than that of the p- has doped inner zone. 9. The method according to claim 7 or 8, characterized in that in the n- doped edge zone of the tub an n-doped transition zone with a stronger doping than that of the tub and in that of the p-doped Inner zone enclosed n-doped zone an n-doped transition zone with a stronger doping than that of the n-doped zone and in the p- doped inner zone a p-doped transition zone with a stronger Doping than that of the inner zone. 10. The method according to claim 4, characterized in that to create a field effect transistor with a Schottky junction as a gate to the p- doped inner zone applied a metal contact forming the gate connection is, which extends to the edge of the n-doped well and the Inner zone divided into two areas, one in the one Drain connection and in the other area a the source connection of the Field effect transistor forming metal contact are applied. 11. The method according to claim 10, characterized in that in the drain and Source-forming regions of the p-doped inner zone each have a p-doped Transition zone with a stronger doping than the inner zone  on the ones that form the drain connection and the source connection Metal contacts are applied. 12. The method according to claim 4, characterized in that to create a field effect transistor with a Schottky junction as a gate to the p- doped inner zone a circumferential, forming the gate connection Metal contact is applied that the inner zone in one of the surrounding metal contact enclosed area and an outside of the circumferential metal contact subdivided area, being in one Area one the drain connection and in the other area the Metal contact forming the source connection of the field effect transistor is applied become. 13. The method according to claim 12, characterized in that in the drain and Source-forming regions of the p-doped inner zone each have a p-doped Transition zone with a stronger doping than the inner zone be on the forming the drain connection and source connection Metal contacts are applied. 14. The method according to claim 1 or 2, characterized in that for Creation of a logic gate with several Schottky diodes Inputs an n-doped zone is generated in the p-doped inner zone, where on the n-doped zone generated in the inner zone Emitter connection on the edge of the n-doped trough Collector connection and on the p-doped inner zone the base connections of the Gating metal contacts are applied. 15. The method according to claim 1 or 2, characterized in that for Creation of a logic gate with several Schottky diodes Inputs with an injector connection in the p-doped inner zone an n- doped zone is generated in which a p-doped zone is generated, wherein the emitter connection to the n-doped zone produced in the inner zone,  on the edge zone of the n-doped trough the collector connection p-doped inner zone forming the base connections and metal contacts p-doped zone in the n-doped zone an the injector connection of the gate forming metal contact can be applied. 16. The method according to claim 1 or 2, characterized in that for Creation of a logic gate with several Schottky diodes Inputs with an injector connection in the p-doped inner zone an n- doped zone is generated and in the inner zone itself up to the peripheral zone of the n-doped well extending n-doped zone is generated in which p-doped zone is generated, with the n- generated in the inner zone doped zone on the collector connection, on the edge zone of the n-doped Trough the emitter connection, the p-doped inner zone Base connections of the gate forming metal contacts and on the p-doped Zone in the n-doped zone forming the injector connection Metal contact can be applied.